CN206003792U - Processing meanss for photovoltaic devices - Google Patents
Processing meanss for photovoltaic devices Download PDFInfo
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- CN206003792U CN206003792U CN201621048127.1U CN201621048127U CN206003792U CN 206003792 U CN206003792 U CN 206003792U CN 201621048127 U CN201621048127 U CN 201621048127U CN 206003792 U CN206003792 U CN 206003792U
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- photovoltaic devices
- light source
- laser light
- rest area
- processing meanss
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The utility model provides a kind of processing meanss for photovoltaic devices, comprising photovoltaic devices rest area, bracing frame and LASER Light Source.Bracing frame be on photovoltaic devices rest area.LASER Light Source group is disposed on the side towards photovoltaic devices rest area of bracing frame, and LASER Light Source group be in order to send laser towards photovoltaic devices rest area.Consequently, it is possible to processing meanss can provide the enough luminous energy of photovoltaic devices and heat energy, so as to the impurity defect of photovoltaic devices is repaired, and then increase the conversion efficiency of photovoltaic devices.
Description
Technical field
The utility model is with regard to a kind of processing meanss for photovoltaic devices, can increase photovoltaic dress especially with regard to one kind
The processing meanss of the efficiency that puts.
Background technology
In recent years, as environmental consciousness is gradually surging, the renewable sources of energy are also increasingly subject to pay attention to.Wherein, photovoltaic devices are (also known as
For solar cell) have the advantages that no pollution and inexhaustible, nexhaustible, thus become in field of renewable energy and looked steadily
Purpose focus.Photovoltaic devices are the devices for converting light energy into electric energy based on photoelectric effect.When light is irradiated in photovoltaic devices
When, photovoltaic devices can absorb luminous energy and produce free electron-hole pair, and subsequent electron hole pair is separated and towards photovoltaic devices
Positive pole and negative pole move, and then provide load elements electric energy.
However, during electronics and hole are moved to positive pole and negative pole, electronics or hole are vulnerable to photovoltaic devices
Defect (defects) affects so that electronics is produced with hole and is combined (recombination) phenomenon, so as to reduce photovoltaic devices
Conversion efficiency.Therefore, the conversion efficiency of photovoltaic devices how is lifted, becomes the problem important for.
Utility model content
The utility model provides a kind of processing meanss for photovoltaic devices, and which can increase the conversion efficiency of photovoltaic devices,
And the light-induced degradation phenomenon of photovoltaic devices can be reduced.
According to some embodiments of the present utility model, a kind of processing meanss for photovoltaic devices are put comprising photovoltaic devices
Put area, bracing frame and LASER Light Source group.Bracing frame be on photovoltaic devices rest area.LASER Light Source group is disposed on bracing frame
The side towards photovoltaic devices rest area, and LASER Light Source group be in order to send laser towards photovoltaic devices rest area.
According to some embodiments of the present utility model, wherein photovoltaic devices rest area is comprising an irradiated region and a non-irradiated
Area.Irradiated region is to be adjacent to non-irradiated area, and irradiated region is in a range of exposures of the LASER Light Source group, and in irradiated region
One temperature can be subject to the heating of laser and be promoted to a target temperature, target temperature between 100° centigrade with 800 degree Celsius it
Between.
According to some embodiments of the present utility model, wherein bracing frame includes side Bi Yuyi top, side wall and top
Intersecting, side wall be between photovoltaic devices rest area and top.
According to some embodiments of the present utility model, wherein LASER Light Source group is affixed to the top of bracing frame, and swashs
One power density of the laser sent by radiant group be between 2W/cm2With 10W/cm2Between.
According to some embodiments of the present utility model, wherein LASER Light Source group is affixed on the top of bracing frame, and
One wavelength of the laser sent by LASER Light Source group be between 300 nanometers and 1100 nanometers.
According to some embodiments of the present utility model, also include a power controller.Power controller is to be electrically connected with
LASER Light Source group, wherein photovoltaic devices rest area be moveable, and power controller be in order to according to photovoltaic devices rest area
A rate travel adjustment LASER Light Source group the laser for being sent a power density.
According to some embodiments of the present utility model, wherein photovoltaic devices rest area does not have heater.
According to some embodiments of the present utility model, a kind of processing meanss for photovoltaic devices are put comprising photovoltaic devices
Put area, bracing frame and passivating device.Bracing frame be on photovoltaic devices rest area.Passivating device is disposed on the court of bracing frame
To the side of photovoltaic devices rest area, and the passivating device light of impurity defect that is provided for repairing photovoltaic devices and
Heat.
According to some embodiments of the present utility model, wherein passivating device includes an at least LASER Light Source.
According to some embodiments of the present utility model, wherein photovoltaic devices rest area is comprising a passivation region and a non-passivation
Area, passivation region are to be adjacent to non-passivation area, and the passivation region is and the temperature energy in passivation region positioned at the underface of passivating device
The enough heat provided based on passivating device and be promoted to a target temperature, target temperature be between 100° centigrade with 800 degree Celsius
Between.
In above-mentioned multiple embodiments, the passivating device (or LASER Light Source group) of processing meanss can provide photovoltaic devices
One high injection light beam and enough heats.Consequently, it is possible to hydrogen (H) atom left in diffusion process by photovoltaic devices can obtain foot
Enough energy, and it is changed into electronegative hydrogen ion (H-).Due to electronegative hydrogen ion (H-) easily with band in photovoltaic devices just
The impurity of electricity is combined, and forms more stable combined state.This more stable combined state is not easy to catch electronics or hole, because
This can repair the impurity defect of photovoltaic devices, so as to increase the electronics of photovoltaic devices or the life cycle (carrier in hole
Lifetime), being beneficial to processing meanss increases the conversion efficiency of photovoltaic devices.
The above be only illustrate problem, the technological means of solve problem that the utility model to be solved and its
Effect of generation etc., detail of the present utility model will be discussed in detail in embodiment below and relevant drawings.
Description of the drawings
Read the corresponding accompanying drawing that describes in detailed below and arrange in pairs or groups, it may be appreciated that multiple patterns of the present utility model.Need to notice
Be, the multiple features in accompanying drawing and not according to the industry field standard practice draw actual ratio.It is true that described feature
Size can arbitrarily increase or decrease the clarity for being beneficial to discussion.
Fig. 1 is the three-dimensional signal of the processing meanss for photovoltaic devices according to some embodiments of the present utility model
Figure；
Fig. 2 is the front view of the processing meanss according to some embodiments of the present utility model；
Fig. 3 is the front view of the processing meanss according to some embodiments of the present utility model.
Specific embodiment
Hereinafter spirit of the present utility model will clearly be illustrated with accompanying drawing and detailed description, have in any art
Generally skill after embodiment of the present utility model is understood, when the technology that can be taught by the utility model, be changed and
Modification, which is without departing from spirit and scope of the present utility model.
In general, the defect of photovoltaic devices can be categorized as lattice defect, interface defect and impurity defect, defects count
Number can affect the conversion efficiency of photovoltaic devices.Wherein, the quantity of impurity defect depends primarily on the semiconductor of photovoltaic devices
The purity of substrate, that is, the amount of impurities that semiconductor substrate has, for example：Interstitial oxygen concentration (Oi), iron (Fe), nickel (Ni) or copper
(Cu) quantity.Traditionally, the semiconductor substrate used by photovoltaic devices is the Chai Shi relatively low using manufacturing cost
Made by (Czochralski, CZ) long crystallization, this semiconductor substrate has up to millionth impurity defect, and easy
Free electronics or hole is caught, is caused under the electronics of photovoltaic devices or the life cycle (carrier lifetime) in hole
Drop, so as to reduce the conversion efficiency of photovoltaic devices.Therefore, the utility model provides a kind of processing meanss for photovoltaic devices,
This processing means can repair the impurity defect of photovoltaic devices, so as to increase the conversion efficiency of photovoltaic devices.
With reference to Fig. 1.Fig. 1 is the vertical of the processing meanss for photovoltaic devices according to some embodiments of the present utility model
Body schematic diagram.Processing meanss 100 include a photovoltaic devices rest area A, a bracing frame 110 and a LASER Light Source group 120.Bracing frame
110 are disposed on the A of photovoltaic devices rest area.LASER Light Source group 120 is disposed on placing towards photovoltaic devices for bracing frame 110
The side of area A, and LASER Light Source group 120 be in order to send laser L towards photovoltaic devices rest area A.In more detail, LASER Light Source
Group 120 is affixed to bracing frame 110, and is located at the top of photovoltaic devices rest area A.When photovoltaic devices 300 are located at photovoltaic devices
During the underface of the LASER Light Source group 120 of rest area A, the laser L that photovoltaic devices 300 can be launched by LASER Light Source group 120 shines
Penetrate, and absorb the energy provided by laser L.This laser L can provide the enough luminous energy of photovoltaic devices 300 and heat energy, so as to repair
The impurity defect of photovoltaic devices 300.
In other words, processing meanss 100 can repair the impurity defect of photovoltaic devices 300.In more detail, photovoltaic devices are worked as
300 after diffusion process with screen printing processing, and the LASER Light Source group 120 of processing meanss 100 can irradiate photovoltaic devices 300, with
The high injection light beam of photovoltaic devices 300 1 and heat energy are provided.Consequently, it is possible to the hydrogen left in diffusion process by photovoltaic devices 300
(H) atom can obtain enough energy, and be changed into electronegative hydrogen ion (H-).Due to electronegative hydrogen ion (H-) easily
With the impurity of positively charged in photovoltaic devices 300 (for example：Boron oxygen misfit thing BO+, or iron Fe+) combine, and form more stable being combined
State.This more stable combined state is not easy to catch electronics or hole, therefore can repair the impurity defect of photovoltaic devices 300,
So as to increase the electronics of photovoltaic devices 300 or the life cycle (carrier lifetime) in hole, it is beneficial to increase photovoltaic dress
Put 300 conversion efficiency.
In some embodiments, with P-type silicon base photovoltaic devices (p-type silicon based photovoltaic)
As a example by, for example：Boron doped single crystal silicon photovoltaic devices or boron DOPOS doped polycrystalline silicon photovoltaic devices.Processing meanss 100 can also improve P-type silicon
Light-induced degradation (Light Induced Degradation, the LID) phenomenon of base photovoltaic devices so that at processing meanss 100
The light-induced degradation ratio of the P-type silicon base photovoltaic devices after reason is less than 1%.In more detail, light-induced degradation phenomenon refers to p-type
Under illumination or under carrier injection, the boron atom in boron-doping silicon substrate can form boron oxygen with interstitial oxygen concentration to silicon-based photovoltaic device
Misfit thing, this boron oxygen misfit thing easily catch electronics or hole, and then reduce the conversion efficiency of P-type silicon base photovoltaic devices.Due to
P-type silicon base photovoltaic devices after processing meanss 100 are processed have produced hydrogen-boron the oxygen ((H of stable state-)-(BO+)) multiple
Compound.Therefore, when light irradiation P-type silicon base photovoltaic devices, P-type silicon base photovoltaic devices can produce boron oxygen misfit thing (BO+)
Quantity can also be reduced, and being beneficial to improves the light-induced degradation phenomenon of P-type silicon base photovoltaic devices.
In some embodiments, processing meanss 100 are mountable to back segment wire mark (printer) equipment and are examined with conversion efficiency
Between examining system.In more detail, processing meanss 100 may be disposed at the Fast Sintering device of wire mark equipment and conversion efficiency is detected
Between system.Consequently, it is possible to processing meanss 100 can effectively utilize photovoltaic devices 300 in FEOL (for example：Diffusion process,
Or thin film deposition process) formed in hydrogen atom, that is, the inside of photovoltaic devices 300 has enough hydrogen atoms.These hydrogen
Atom can effectively absorb the energy provided by processing meanss 100 so that hydrogen atom is changed into electronegative hydrogen ion, so as to repair
Mend the impurity defect of photovoltaic devices 300.
In some embodiments, processing meanss 100 can be designed for hollow type, that is, processing meanss 100 can be non-close
Chamber.Processing meanss 100 are at least partially exposed under atmospheric environment, and need not be vacuumized processing meanss 100 or logical
Enter other gases, but the utility model is not limited.
In some embodiments, as shown in figure 1, photovoltaic devices rest area A is comprising an irradiated region 210 and a non-irradiated area
220.Irradiated region 210 is to be adjacent to non-irradiated area 220, irradiated region 210 be in a range of exposures of LASER Light Source group 120,
And 210 temperature can be subject to the heating of laser and be promoted to a target temperature in irradiated region, target temperature be between Celsius 100
Spend and 800 degree Celsius.That is, positioned at the photovoltaic devices 300 of irradiated region 210 temperature can be promoted to 100° centigrade with
Between 800 degree Celsius.For example, positioned at irradiated region 210 photovoltaic devices 300 temperature can for 200 degree Celsius, Celsius 300
Degree, 400 degree Celsius, 500 degree Celsius, 600 degree Celsius or Celsius 700 degree, but the utility model is not limited.Consequently, it is possible to
When photovoltaic devices 300 be located at LASER Light Source group 120 lower section irradiated region 210 when, photovoltaic devices 300 can receive simultaneously heat energy with
Luminous energy, is beneficial to processing meanss 100 and provides photovoltaic devices 300 enough energy, to repair the impurity defect of photovoltaic devices 300.
It should be noted that when the temperature of irradiated region 210 is less than 100° centigrade, photovoltaic devices 300 can cannot obtain enough energy
To change hydrogen atom into electronegative hydrogen ion, so as to cannot effectively repair impurity defect.When the temperature of irradiated region 210 is more than
When 800 degree, then the unnecessary heat of photovoltaic devices 300 can be caused to accumulate (thermal budget), so as to increase photovoltaic devices
300 be heated produced by amount of warpage.
In some embodiments, photovoltaic devices rest area A does not have heater.That is, LASER Light Source group 120
Heating element heater for irradiated region 210.Under the irradiation of LASER Light Source group 120, the temperature of the irradiated region 210 of photovoltaic devices rest area A
Degree can be more than room temperature, that is, the temperature of irradiated region 210 can be subject to the heating of laser and be lifted.That is, processing meanss 100
LASER Light Source group 120 can provide photovoltaic devices 300 enough heats, and need not arrange extra heater, be beneficial to simplification
The structure of processing meanss 100.
Referring concurrently to Fig. 1 and Fig. 2.Fig. 2 is the front view of the processing meanss according to some embodiments of the present utility model.
In some embodiments, comprising side wall 112 and a top 114, side wall 112 is intersected bracing frame 110 with top 114, and side
Wall is 112 Wei Yu photovoltaic devices rest area A and top 114 between.Side wall 112 is connection photovoltaic devices rest area A, top 114
Spaced a distance with photovoltaic devices rest area A, and LASER Light Source group 120 is affixed to the top 114 of bracing frame 110.Namely
Say, LASER Light Source group 120 is separated by an at least distance with photovoltaic devices rest area A.By adjusting length D of side wall 112, can adjust
LASER Light Source group 120 and the distance of photovoltaic devices rest area A, so as to change the temperature in the range of exposures of LASER Light Source group 120,
That is, change the temperature of the irradiated region 210 of photovoltaic devices rest area A.
For example, as shown in fig. 1 and 2, in some embodiments, photovoltaic devices rest area A can be located at a casing
On 230.Side wall 112 is comprising an end 1122 and a top 1124.End 1122 be opposed tips 1124 away from top 114, and
Top 1124 and the top 114 of side wall 112 is to interconnect.The end 1122 of side wall 112 has a prodger 1126, prominent
Part 1126 is connection casing 230, and prodger 1126 is fixed on casing 230 by a fixture 130.For example, in
In some embodiments, fixture 130 can be screw, fastener or bolt, but the utility model is not limited.
In some embodiments, the power density of the laser sent by LASER Light Source group 120 be between 2W/cm2With
10W/cm2Between, efficiently and quickly to repair the impurity defect of photovoltaic devices 300.For example, in some embodiments
In, the power density of the laser sent by LASER Light Source group 120 can be 4W/cm2、6W/cm2Or 8W/cm2, but the utility model is not
As limit.In some embodiments, by taking P-type silicon base photovoltaic devices as an example, the laser that sent when LASER Light Source group 120
Power density is 2W/cm2To 10W/cm2When, LASER Light Source 120 can provide the enough energy of P-type silicon base photovoltaic devices with high injection
Carrier so that the boron atom in the boron-doping silicon substrate of P-type silicon base photovoltaic devices rapidly can be combined with interstitial oxygen concentration, and form band
The boron oxygen misfit thing of positive electricity.The boron oxygen misfit thing of this positively charged easily attracts electronegative hydrogen ion, so as to efficiently and quickly repair
The impurity defect of P-type silicon base photovoltaic devices is mended, quantum of output of the processing meanss 100 in time per unit is increased with profit.
In some embodiments, processing meanss 100 also include power controller 140, and power controller 140 is electrically to connect
Connect LASER Light Source group 120.Photovoltaic devices rest area A be moveable, and power controller 140 be in order to put according to photovoltaic devices
The rate travel for putting area A adjusts the power density of the laser sent by LASER Light Source group 120.In more detail, LASER Light Source group
The power density of 120 laser for being sent can be adjusted by power controller 140.For example, in some embodiments, light
Volt device rest area A can be a part for conveying device.Conveying device includes the conveyer belt 240 on casing 230, conveyer belt
240 is rotatably to be advanced towards LASER Light Source group 120 with drive photovoltaic devices 300, and the rotating speed of conveyer belt 240 can be with processing procedure
Instantly situation or production capacity change.When the speed that conveyer belt 240 transmits photovoltaic devices 300 is very fast, that is, photovoltaic devices 300
Stay in the lower section of LASER Light Source group 120 time shorter when, the power that power controller 140 can increase LASER Light Source group 120 is close
Degree so that the received laser energy in the time per unit of photovoltaic devices 300 is enough.Or, in part embodiment party
In formula, when the speed that conveyer belt 240 transmits photovoltaic devices 300 is slower, that is, photovoltaic devices 300 stay in LASER Light Source group
When the time of 120 lower sections is longer, power controller 140 can reduce the power density of LASER Light Source group 120 so that photovoltaic devices
300 received laser energies in the time per unit are appropriate.
In some embodiments, the wavelength of the laser sent by LASER Light Source group 120 is received with 1100 between 300 nanometers
Between rice, to provide photovoltaic devices 300 enough energy, so as to efficiently and quickly repair the impurity defect of photovoltaic devices 300.
For example, in some embodiments, the peak wavelength of the laser sent by LASER Light Source group 120 can for 375 nanometers, 400
Nanometer, 500 nanometers, 600 nanometers, 700 nanometers, 800 nanometers, 900 nanometers or 1000 nanometers, but the utility model not as
Limit.
In some embodiments, the top 114 of bracing frame 110 is comprising a relative bottom surface 1142 and a top surface 1144.
Top surface 1144 be opposing bottom surface 1142 away from photovoltaic devices rest area A, and LASER Light Source group 120 is disposed on the bottom at top 114
Face 1142.In some embodiments, LASER Light Source group 120 can be comprising plural LASER Light Source 122.For example, plural laser
Light source 122 is to be arranged in continuous strip or discontinuous strip；Or, LASER Light Source 122 can be with the side of two-dimensional array
Formula is distributed in the top 114 of bracing frame 110, but the utility model is not limited.In other embodiment, LASER Light Source group
120 can be single LASER Light Source, and this single LASER Light Source can be ball-type light source, strip light source, but the utility model is not
As limit.
On the other hand, LASER Light Source group 120 can be as passivating device, and this passivating device is arranged at bracing frame 110
The side towards photovoltaic devices rest area A, and in order to provide the light and heat of the impurity defect that can repair photovoltaic devices 300.
That is, passivating device can provide at least one high injection light of photovoltaic devices 300 and heat energy, so as to repair the impurity of photovoltaic devices 300
Defect.Photovoltaic devices rest area A comprising passivation region and non-passivation area, passivation region be positioned at the underface of passivating device, that is, position
Photovoltaic devices rest area A in the underface of passivating device can be defined as a passivation region (or referred to as irradiated region 210), and photovoltaic
Device 300 can be passivated (passivation) in passivation region.The photovoltaic devices rest area of the non-underface positioned at passivating device
A can be defined as a non-passivation area (that is, non-irradiated area 220).Additionally, by the setting of passivating device, the temperature in passivation region
The heat energy that can be provided based on passivating device and be promoted to a target temperature, and target temperature be between 100° centigrade with Celsius
800 degree.Although present embodiment is with LASER Light Source group 120 as passivating device, in other embodiment, passivating device is also
Comprising other auxiliary intensification modules, seem condensing glass plate or other appropriate elements, but the utility model is not limited.
With reference to Fig. 3.Fig. 3 is the front view of processing meanss 100a according to embodiment of the present utility model.This embodiment party
Formula is in the Main Differences of aforementioned embodiments：LASER Light Source group 120 may be disposed at the top of the top 114a of bracing frame 110a
Face 1144a, and top 114a is transparent.That is, the laser-light transparent bracing frame 110a launched by LASER Light Source group 120
Top 114a, so as to the photovoltaic devices 300 being irradiated to immediately below positioned at LASER Light Source group 120.For example, implement in part
In mode, top 114a can be a transparency carrier or optical glass, and in order to spread or homogenize laser, but the utility model is not
As limit.In other embodiment, top 114a also can be with an opening so that what LASER Light Source group 120 was launched swashs
Light can be irradiated to photovoltaic devices 300 by this opening, but the utility model is not limited.
In above-mentioned multiple embodiments, the passivating device (or LASER Light Source group) of processing meanss can provide photovoltaic devices
One high injection light beam and enough heats.Consequently, it is possible to the hydrogen atom left in diffusion process by photovoltaic devices can be obtained enough
Energy, and be changed into electronegative hydrogen ion.Due to electronegative hydrogen ion impurity easily with positively charged in photovoltaic devices
In conjunction with, and form more stable combined state.This more stable combined state is not easy to catch electronics or hole, therefore can repair
The impurity defect of photovoltaic devices, so as to increase the electronics of photovoltaic devices or the life cycle (carrier lifetime) in hole,
Being beneficial to processing meanss increases the conversion efficiency of photovoltaic devices.Further, since through processing meanss process after P-type silicon base light
Volt device can produce hydrogen-boron the oxygen ((H of stable state-)-(BO+)) compound, therefore, when sunlight p-type silicon-based photovoltaic is filled
When putting, the light-induced degradation phenomenon of P-type silicon base photovoltaic devices can also be reduced.
Although the utility model is disclosed above with embodiment, so which is not limited to the utility model, any ripe
This those skilled in the art is known, without departing from spirit and scope of the present utility model, when can be used for a variety of modifications and variations, therefore this practicality
New protection domain ought be defined depending on the scope of which is defined in the appended claims.
Claims (10)
1. a kind of processing meanss for photovoltaic devices, it is characterised in that include：
One photovoltaic devices rest area；
One bracing frame, on the photovoltaic devices rest area；And
One LASER Light Source group, is arranged at the side of the direction photovoltaic devices rest area of the bracing frame, in order to towards the photovoltaic devices
Rest area sends laser.
2. processing meanss for photovoltaic devices according to claim 1, it is characterised in that photovoltaic devices rest area bag
Containing an irradiated region and a non-irradiated area, the irradiated region is to be adjacent to the non-irradiated area, the irradiated region be positioned at the LASER Light Source group
A range of exposures in, and the temperature in the irradiated region can be subject to the heating of the laser and be promoted to a target temperature, should
Target temperature between 100° centigrade and Celsius 800 degree between.
3. processing meanss for photovoltaic devices according to claim 1, it is characterised in that the bracing frame includes side wall
With a top, the side wall and the roof intersection, the side wall be between photovoltaic devices rest area and the top.
4. processing meanss for photovoltaic devices according to claim 3, it is characterised in that the LASER Light Source group is fixing
In the top of the bracing frame, and the power density of the laser that sent of the LASER Light Source group be between 2W/cm2With 10W/
cm2Between.
5. processing meanss for photovoltaic devices according to claim 3, it is characterised in that the LASER Light Source group is fixing
On the top of the bracing frame, and the wavelength of the laser that sent of the LASER Light Source group be between 300 nanometers and 1100
Between nanometer.
6. processing meanss for photovoltaic devices according to claim 1, it is characterised in that also include：
One power controller, is electrically connected with the LASER Light Source group, and wherein the photovoltaic devices rest area is moveable, and the power
Controller be in order to adjust laser for being sent of the LASER Light Source group according to a rate travel of the photovoltaic devices rest area
A power density.
7. processing meanss for photovoltaic devices according to claim 1, it is characterised in that the photovoltaic devices rest area is not
With heater.
8. a kind of processing meanss for photovoltaic devices, it is characterised in that include：
One photovoltaic devices rest area；
One bracing frame, on the photovoltaic devices rest area；And
One passivating device, is arranged at the side of the direction photovoltaic devices rest area of the bracing frame, can repair this in order to provide
The light and heat of the impurity defect of photovoltaic devices.
9. processing meanss for photovoltaic devices according to claim 8, it is characterised in that the passivating device is comprising at least
One LASER Light Source.
10. processing meanss for photovoltaic devices according to claim 8, it is characterised in that the photovoltaic devices rest area
Comprising a passivation region and a non-passivation area, the passivation region is to be adjacent to the non-passivation area, the passivation region be positioned at the passivating device
Underface, and the heat that can be provided based on the passivating device of the temperature in the passivation region and be promoted to a target temperature,
The target temperature be between 100° centigrade and Celsius 800 degree between.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201621048127.1U CN206003792U (en) | 2016-09-12 | 2016-09-12 | Processing meanss for photovoltaic devices |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201621048127.1U CN206003792U (en) | 2016-09-12 | 2016-09-12 | Processing meanss for photovoltaic devices |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN206003792U true CN206003792U (en) | 2017-03-08 |
Family
ID=58193171
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201621048127.1U Expired - Fee Related CN206003792U (en) | 2016-09-12 | 2016-09-12 | Processing meanss for photovoltaic devices |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN206003792U (en) |
-
2016
- 2016-09-12 CN CN201621048127.1U patent/CN206003792U/en not_active Expired - Fee Related
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