CN105356837A - Resonant and energy-increasing photovoltaic cell unit capable of increasing photovoltaic output - Google Patents
Resonant and energy-increasing photovoltaic cell unit capable of increasing photovoltaic output Download PDFInfo
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- CN105356837A CN105356837A CN201510711129.8A CN201510711129A CN105356837A CN 105356837 A CN105356837 A CN 105356837A CN 201510711129 A CN201510711129 A CN 201510711129A CN 105356837 A CN105356837 A CN 105356837A
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- 239000004065 semiconductor Substances 0.000 claims abstract description 40
- 238000003860 storage Methods 0.000 claims abstract description 18
- 241001424688 Enceliopsis Species 0.000 claims description 25
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 16
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical group [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 11
- 238000000034 method Methods 0.000 claims description 10
- 229910000838 Al alloy Inorganic materials 0.000 claims description 9
- 229910000831 Steel Inorganic materials 0.000 claims description 9
- 239000010959 steel Substances 0.000 claims description 9
- 239000005028 tinplate Substances 0.000 claims description 9
- 239000011159 matrix material Substances 0.000 claims description 7
- 241000209094 Oryza Species 0.000 claims description 6
- 235000007164 Oryza sativa Nutrition 0.000 claims description 6
- 235000009566 rice Nutrition 0.000 claims description 6
- 239000011521 glass Substances 0.000 claims description 3
- 229910052751 metal Inorganic materials 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 3
- 239000007787 solid Substances 0.000 claims description 3
- 230000000694 effects Effects 0.000 abstract description 3
- 230000005693 optoelectronics Effects 0.000 abstract 1
- 238000009434 installation Methods 0.000 description 8
- 238000010276 construction Methods 0.000 description 4
- 238000011161 development Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 239000000428 dust Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000010248 power generation Methods 0.000 description 3
- 239000004576 sand Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 230000009466 transformation Effects 0.000 description 3
- TVEXGJYMHHTVKP-UHFFFAOYSA-N 6-oxabicyclo[3.2.1]oct-3-en-7-one Chemical compound C1C2C(=O)OC1C=CC2 TVEXGJYMHHTVKP-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000000407 epitaxy Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 239000002210 silicon-based material Substances 0.000 description 2
- 238000004857 zone melting Methods 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000002178 crystalline material Substances 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 230000005672 electromagnetic field Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 230000003760 hair shine Effects 0.000 description 1
- BGOFCVIGEYGEOF-UJPOAAIJSA-N helicin Chemical compound O[C@@H]1[C@@H](O)[C@H](O)[C@@H](CO)O[C@H]1OC1=CC=CC=C1C=O BGOFCVIGEYGEOF-UJPOAAIJSA-N 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 229910052752 metalloid Inorganic materials 0.000 description 1
- 150000002738 metalloids Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 230000005622 photoelectricity Effects 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000007670 refining Methods 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- SBEQWOXEGHQIMW-UHFFFAOYSA-N silicon Chemical group [Si].[Si] SBEQWOXEGHQIMW-UHFFFAOYSA-N 0.000 description 1
- 230000008010 sperm capacitation Effects 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
- H01L31/0547—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means comprising light concentrating means of the reflecting type, e.g. parabolic mirrors, concentrators using total internal reflection
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02S—GENERATION OF ELECTRIC POWER BY CONVERSION OF INFRARED RADIATION, VISIBLE LIGHT OR ULTRAVIOLET LIGHT, e.g. USING PHOTOVOLTAIC [PV] MODULES
- H02S40/00—Components or accessories in combination with PV modules, not provided for in groups H02S10/00 - H02S30/00
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/52—PV systems with concentrators
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Abstract
A resonant and energy-increasing photovoltaic cell unit capable of increasing photovoltaic output is disclosed, belonging to the technical field of optoelectronics. The resonant and energy-increasing photovoltaic cell unit comprises a photovoltaic cell ball (1), a high voltage resonator (2), a collecting lens (3), a storage battery (4), solar rays (5), a fixed shaft (6), a reflective half-ball (7) and a storage power line (10); the resonant and energy-increasing photovoltaic cell unit is characterized in that photovoltaic cell ball (1) is in a rugby shape; a photovoltaic cell ball wall (22) formed by a semiconductor layer (8) and a base layer (9) is on the external of the photovoltaic cell ball while the hollow cavity in the internal of the photovoltaic cell ball is a photovoltaic cell ball cavity (21); an opening is formed in one end of the photovoltaic cell ball for accepting the light rays from a light outlet (15) of the high voltage resonator (2); the other end of the photovoltaic cell ball is blocked by the reflective half-ball (7); the inner surface of the photovoltaic cell ball wall (22) is covered by the semiconductor layer (8); and the base layer (9) is welded on the reflective half-ball base body (20). The resonant and energy-increasing photovoltaic cell unit capable of increasing the photovoltaic output is simple in preparation, high in operability, low in cost and obvious in effect.
Description
Technical field
The present invention relates to a kind of resonance and add the photovoltaic cells that can increase photovoltaic and exert oneself, belong to photoelectricity technical field.
Background technology
Monocrystalline silicon is a kind of more active nonmetalloid, is the important component part of crystalline material, is in the forward position of new material development.Its main application is used as semi-conducting material and utilizes solar energy power generating, heat supply [1] etc.There is due to solar energy the many advantages such as clean, environmental protection, convenience, in the last thirty years, solar utilization technique researching and developing, commercially produce, all obtain tremendous development in market development, become the world fast, one of the new industry of stable development.Silicon is that the earth stores one of the abundantest material, and found the characteristic of semiconductor of crystalline silicon from 19th century scientists after, it almost changes all, even the thinking of the mankind.Until the sixties in last century, silicon materials just instead of original germanium material.Silicon materials--because of it, to have high temperature resistant and radiation resistance better, the characteristic of special suitable for making high power device and become the maximum a kind of semi-conducting material of application, and integrated circuit semiconductor apparatus great majority manufacture with silicon materials.Elemental silicon silicon atom when solidifying of melting is arranged in many nucleus with diamond lattice, if these nucleus grow up to the identical crystal grain of high preferred orientation, then these crystal grain parallel junction just crystallize into monocrystalline silicon altogether.Monocrystalline silicon has metalloid physical property, has more weak conductivity, and its conductivity increases with the rising of temperature, has significant semiconduction.Ultrapure monocrystalline silicon is intrinsic semiconductor.In ultrapure monocrystalline silicon, mix III A race element of trace, as boron can improve the degree of its conduction, and form P-type silicon semiconductor; As mixed V A race element of trace, as phosphorus or arsenic also can improve conductivity degree, form N-type Si semiconductor.N-type and P type semiconductor combine, and just can make solar cell, change radiant energy into electric energy.The difference of growing method pressed by monocrystalline silicon, is divided into Czochralski method CZ, zone-melting process FZ and epitaxy.Czochralski method, zone-melting process growing single-crystal silicon bar, epitaxy growing single-crystal silicon thin film.The monocrystalline silicon of Grown by CZ Method is mainly used in semiconductor integrated circuit, diode, epitaxial wafer substrate, solar cell.Photovoltaic generation engineering is according to photovoltaic effect principle, utilizes solar cell that solar energy is converted into electric energy.No matter be independently use or generate electricity by way of merging two or more grid systems, photovoltaic generating system forms primarily of solar cell board component, controller and inverter three parts, they are formed primarily of electronic devices and components, do not relate to mechanical part, so, photovoltaic power generation equipment is refining very, and the reliable and stable life-span is long, installation and maintenance are easy.Theoretically, photovoltaic power generation technology may be used for any occasion needing power supply, on to spacecraft, down to domestic power supply, large to MW class power station, little of toy, photo-voltaic power supply can be ubiquitous.It is exactly briefly the ratio that photovoltaic institute energy output accounts for a country aggregate supply electricity that photovoltaic is exerted oneself.Ratio is larger, and photovoltaic is exerted oneself larger.Therefore how to work out and a kind ofly can carry out solar power generation with lower cost, the a great problem becoming and be badly in need of solving thus lifting photovoltaic is exerted oneself, so utilize photovoltaic cell ball, traditional photovoltaic cell is exposed by surface and transfers internal protection to, decrease the interference of the extraneous factor such as sand and dust, wet weather; By high pressure resonator, while increase sunray energy, by sunray tractive, make it to irradiate into photovoltaic cell ball comparatively straightly, improve the transformation efficiency of sunray energy; The semiconductor made due to monocrystalline silicon is expensive, by condenser and the acting in conjunction of light microscopic received, large-area solar irradiation can be concentrated in a less region, thus greatly reduce the use amount of expensive semiconductor, reach cost-saving object.Simultaneously, condenser not only price is low, and easily install, add only straightline propagation, like this, no matter anywhere, condenser can be installed and receive light microscopic, thus the installation region of photovoltaic cell being extended to the anywhere being convenient to installation and operation from sun-drenched open field, while reducing costs, also greatly facilitate construction and manipulation, invent a kind of resonance and add that to increase the photovoltaic cells that photovoltaic exerts oneself be necessary.
Summary of the invention
In order to the difficult problem overcome, the invention provides resonance and add the photovoltaic cells that can increase photovoltaic and exert oneself, this kind of resonance adds can be increased the photovoltaic cells that photovoltaic exerts oneself and utilize photovoltaic cell ball, traditional photovoltaic cell is exposed by surface and transfers internal protection to, decrease the interference of the extraneous factor such as sand and dust, wet weather; By high pressure resonator, while increase sunray energy, by sunray tractive, make it to irradiate into photovoltaic cell ball comparatively straightly, improve the transformation efficiency of sunray energy; The semiconductor made due to monocrystalline silicon is expensive, by condenser and the acting in conjunction of light microscopic received, large-area solar irradiation can be concentrated in a less region, thus greatly reduce the use amount of expensive semiconductor, reach cost-saving object.Simultaneously, condenser not only price is low, and easily install, add only straightline propagation, like this, no matter anywhere, condenser can be installed and receive light microscopic, thus the installation region of photovoltaic cell is extended to the anywhere being convenient to installation and operation from sun-drenched open field, while reducing costs, also greatly facilitate construction and manipulation.
The technical solution adopted for the present invention to solve the technical problems is:
Resonance of the present invention adds can be increased the photovoltaic cells that photovoltaic exerts oneself and be made up of photovoltaic cell ball 1, high pressure resonator 2, condenser 3, storage battery 4, sunray 5, fixed axis 6, reflective hemisphere 7, storage power line 10, it is characterized in that: described photovoltaic cell ball 1 American football shape, longest diameter is 5-10 centimetre, the shortest diameter is 3-6 centimetre, outside is the photovoltaic cell ball wall 22 be made up of semiconductor layer 8 and basic unit 9, and inner cavity is photovoltaic cell ball chamber 21; One end open, receive and irradiate the light of coming from the light-emitting window 15 of high pressure resonator 2, the other end is by the shutoff of reflective hemisphere 7; Semiconductor layer 8 is that thickness is 1-5 millimeter, covers the inner surface of photovoltaic cell ball wall 22 by producing the known Czochralski method of semiconductor, the Rotating fields that the N-type be processed into by monocrystalline silicon and P type semiconductor are combined together to form; Basic unit 9 is structures that fixing semiconductor layer 8 forms American football shape, is made up of plastic-steel, aluminium alloy or tinplate, and be connected with reflective hemisphere 7 one end, basic unit 9 is welded on reflective hemisphere matrix 20.
Described high pressure resonator 2 is cylindric, by resonant power line 11, resonant power line plug 12, light inlet 13, high pressure resonator walls 14, light-emitting window 15, receive light microscopic 16, positive electrode 17, negative electrode 18 and form, outer diameter is 1-2 centimetre, inner diameter is 0.5-1 centimetre, and the part between inside and outside wall is high pressure resonator walls 14; Resonant power line 11 is bifilar copper core power lines, and per share copper core diameter is 2-5 millimeter, and outer end connects resonant power line plug 12; Resonant power line 11 is divided into two strands outside high pressure resonator walls 14, and being connected with the positive electrode 17 of high pressure resonator 2 and negative electrode 18 respectively, is sub-thread at the metal wire of high pressure resonator walls 14, copper core, and diameter is 2-5 millimeter, and helical form is arranged in high pressure resonator walls 14; Light inlet 13 is openings of high pressure resonator 2 outer end, and diameter is 0.5-1 centimetre; Light microscopic 16 of receiving is the convex lens being arranged on light inlet 13 place, and diameter is 0.5-1 centimetre, and thickness is 0.3-0.8 centimetre, is embedded in the high pressure resonator walls 14 at light inlet 13 place.
Described reflective hemisphere 7 hemisphere, height is 2-5 millimeter, bottom surface circular diameter is 4-10 millimeter, the parts of reflection ray sunray 5 being distributed to whole photovoltaic cell ball chamber 21, be positioned at one end of photovoltaic cell ball 1, sphere is towards photovoltaic cell ball chamber 21, and top layer is the known mirror structure i.e. hemisphere reflective mirror 19 of the glass that one side is silver-plated, and hemisphere reflective mirror 19 thickness is 1-3 millimeter; Central authorities are solid reflective hemisphere matrixes 20 of hemisphere, reflective hemisphere matrix 20 plastic-steel matter, aluminium alloy matter or tinplate matter; Bottom surface circle centre position is welded with columniform fixed axis 6, fixed axis 6 plastic-steel matter, aluminium alloy matter or tinplate matter, and edge and basic unit 9 weld together, and diameter is 1-2 millimeter, and length is 5-10 millimeter.
Described condenser 3 is convex lens, and diameter is 0.1-10 rice, and thickness is 0.05-2.5 rice, is arranged on can receive arbitrarily solar light irradiation sunray can being focused on to receive light microscopic 16 local.
Beneficial effect of the present invention is, resonance adds can be increased the photovoltaic cells that photovoltaic exerts oneself and utilize photovoltaic cell ball, is exposed by traditional photovoltaic cell and transfers internal protection to, decrease the interference of the extraneous factor such as sand and dust, wet weather by surface; By high pressure resonator, while increase sunray energy, by sunray tractive, make it to irradiate into photovoltaic cell ball comparatively straightly, improve the transformation efficiency of sunray energy; The semiconductor made due to monocrystalline silicon is expensive, by condenser and the acting in conjunction of light microscopic received, large-area solar irradiation can be concentrated in a less region, thus greatly reduce the use amount of expensive semiconductor, reach cost-saving object.Simultaneously, condenser not only price is low, and easily install, add only straightline propagation, like this, no matter anywhere, condenser can be installed and receive light microscopic, thus the installation region of photovoltaic cell is extended to from sun-drenched open field be convenient to install and the anywhere of operation, reducing costs and improving while photovoltaic exerts oneself, also greatly facilitate construction and manipulate.Resonance adds can be increased the photovoltaic cells equipment therefor that photovoltaic exerts oneself and make simple, workable, with low cost, successful.
Accompanying drawing explanation
Below in conjunction with accompanying drawing, the present invention is further described.
Fig. 1 is that resonance of the present invention adds the overall structure schematic diagram that can increase the photovoltaic cells that photovoltaic is exerted oneself.
Fig. 2 is that resonance of the present invention adds the vertical section structure schematic diagram that can increase the photovoltaic cells that photovoltaic is exerted oneself.
Fig. 3 is that resonance of the present invention adds the high pressure resonator structure schematic diagram that can increase the photovoltaic cells that photovoltaic is exerted oneself.
Fig. 4 is that resonance of the present invention adds the reflective semiglobe schematic diagram that can increase the photovoltaic cells that photovoltaic is exerted oneself.
1. photovoltaic cell balls, 2. high pressure resonator, 3. condenser, 4. storage battery in figure, 5. sunray, 6. fixed axis, 7. reflective hemisphere, 8. semiconductor layer, 9. basic unit, 10. storage power line, 11. resonant power lines, 12. resonant power line plugs, 13. light inlets, 14. high pressure resonator walls, 15. light-emitting windows, 16. receive light microscopic, 17. positive electrodes, 18. negative electrodes, 19. hemisphere reflective mirrors, 20. reflective hemisphere matrixes, 21. photovoltaic cell ball chambeies, 22. photovoltaic cell ball walls.
Embodiment
Embodiment one
As shown in the figure, resonance of the present invention add can increase photovoltaic cells that photovoltaic exerts oneself by photovoltaic cell ball 1, high pressure resonator 2, condenser 3, storage battery 4, sunray 5, fixed axis 6, reflective hemisphere 7, semiconductor layer 8, basic unit 9, storage power line 10, resonant power line 11, resonant power line plug 12, light inlet 13, high pressure resonator walls 14, light-emitting window 15, receive light microscopic 16, positive electrode 17, negative electrode 18, hemisphere reflective mirror 19, reflective hemisphere matrix 20, photovoltaic cell ball chamber 21, photovoltaic cell ball wall 22 and form.Photovoltaic cell ball 1 American football shape, longest diameter is 5-10 centimetre, and the shortest diameter is 3-6 centimetre, and outside is the photovoltaic cell ball wall 22 be made up of semiconductor layer 8 and basic unit 9, and inner cavity is photovoltaic cell ball chamber 21; One end open, receive and irradiate the light of coming from the light-emitting window 15 of high pressure resonator 2, the other end is by the shutoff of reflective hemisphere 7, the sunray 5 that light-emitting window 15 shines in is under the effect of hemisphere reflective mirror 19, reflection is distributed to the surface of photovoltaic cell ball 1 inner semiconductor layer 8, cause the photoelectric conversion of semiconductor layer 8, and then solar energy is converted into electric energy, be transported to storage battery 4 by storage power line 10 and store.Semiconductor layer 8 is by producing the known Czochralski method of semiconductor, the Rotating fields that the N-type be processed into by monocrystalline silicon and P type semiconductor are combined together to form, thickness is 1-5 millimeter, cover the inner surface of photovoltaic cell ball wall 22, solar energy for being carried by the sunray shone in from light-emitting window 15 5 is converted into electric energy, and is communicated with storage battery 4 by storage power line 10.Basic unit 9 is structures that fixing semiconductor layer 8 forms American football shape, is made up of plastic-steel, aluminium alloy or tinplate, and be connected with reflective hemisphere 7 one end, basic unit 9 is welded on reflective hemisphere matrix 20, thus makes whole 1 one-tenth, photovoltaic cell ball as a whole.Reflective hemisphere 7 hemisphere, height is 2-5 millimeter, bottom surface circular diameter is 4-10 millimeter, the parts of reflection ray sunray 5 being distributed to whole photovoltaic cell ball chamber 21, be positioned at one end of photovoltaic cell ball 1, sphere is towards photovoltaic cell ball chamber 21, and top layer is the known mirror structure i.e. hemisphere reflective mirror 19 of the glass that one side is silver-plated, have the ability of reflection ray, hemisphere reflective mirror 19 thickness is 1-3 millimeter; Central authorities are solid reflective hemisphere matrixes 20 of hemisphere, reflective hemisphere matrix 20 plastic-steel matter, aluminium alloy matter or tinplate matter; Bottom surface circle centre position is welded with columniform fixed axis 6, fixed axis 6 plastic-steel matter, aluminium alloy matter or tinplate matter, edge and basic unit 9 weld together, and diameter is 1-2 millimeter, length is 5-10 millimeter, is the parts be fixed on by photovoltaic cell ball 1 on photovoltaic cell integral support.Storage power line 10 is known copper core power lines, and copper core diameter is 0.5-1 millimeter.Storage power line 10 one end connects semiconductor layer 8, and the other end connects storage battery 4, thus by electrical power storage that semiconductor layer 8 is converted.High pressure resonator 2 is cylindric, by resonant power line 11, resonant power line plug 12, light inlet 13, high pressure resonator walls 14, light-emitting window 15, receive light microscopic 16, positive electrode 17, negative electrode 18 and form, outer diameter is 1-2 centimetre, inner diameter is 0.5-1 centimetre, and the part between inside and outside wall is high pressure resonator walls 14.Resonant power line 11 is known bifilar copper core power lines, per share copper core diameter is 2-5 millimeter, outer end connects commercially available known two-phase resonant power line plug 12, and resonant power line 11, can by extraneous power delivery to high pressure resonator 2 together with resonance power-line plug 12.Resonant power line 11 arrives high pressure resonator walls 14 and is divided into two strands, is connected respectively with positive electrode 17 and negative electrode 18, and the metal wire in high pressure resonator walls 14 is sub-thread, copper core, and diameter is 2-5 millimeter, and helical form is arranged in high pressure resonator walls 14; Due to wave-particle dimorphism, sunray 5 can accelerate capacitation under the influence of a magnetic field, so when passing into high-tension current, form spiral helicine high-voltage electromagnetic field, can for add energy through sunray 5 resonance of high pressure resonator 2 inner chamber.Light inlet 13 is openings of high pressure resonator 2 outer end, and diameter is 0.5-1 centimetre, can receive and converge the sunray 5 of coming from condenser 3.Light microscopic 16 of receiving is the convex lens being arranged on light inlet 13 place, diameter is 0.5-1 centimetre, thickness is 0.3-0.8 centimetre, be embedded in the high pressure resonator walls 14 at light inlet 13 place, can by irradiate from condenser 3 light of coming comparatively straight be transferred to light-emitting window 15, be transferred to further in photovoltaic cell ball 1.Condenser 3 is known convex lens, diameter is 0.1-10 rice, and thickness is 0.05-2.5 rice, is arranged on can receive arbitrarily solar light irradiation sunray can being focused on to receive light microscopic 16 local, sunray can be focused on and receive light microscopic 16, thus by more ray-collecting to together.The semiconductor made due to monocrystalline silicon is expensive, by condenser 3 and the acting in conjunction of light microscopic 16 received, large-area solar irradiation can be concentrated in a less region, thus greatly reduce the use amount of expensive semiconductor, reach cost-saving object.Simultaneously, condenser 3 not only price is low, and easily install, add only straightline propagation, like this, no matter anywhere, condenser 3 and light microscopic 16 of receiving can be installed, thus the installation region of photovoltaic cell is extended to the anywhere being convenient to installation and operation from sun-drenched open field, while reducing costs, also greatly facilitate construction and manipulation.
More than show and describe general principle of the present invention and principal character and advantage of the present invention.The technical staff of the industry should be appreciated that; the present invention is not restricted to the described embodiments; what describe in above-described embodiment and specification just illustrates principle of the present invention; without departing from the spirit and scope of the present invention; the present invention also has various changes and modifications; these changes and improvements all fall in the claimed scope of the invention, and application claims protection range is defined by its equivalent of appending claims.
Claims (4)
1. resonance adds can increase photovoltaic cells that photovoltaic exerts oneself by photovoltaic cell ball (1), high pressure resonator (2), condenser (3), storage battery (4), sunray (5), fixed axis (6), reflective hemisphere (7), storage power line (10) forms, it is characterized in that: described photovoltaic cell ball (1) American football shape, longest diameter is 5-10 centimetre, the shortest diameter is 3-6 centimetre, outside is the photovoltaic cell ball wall (22) be made up of semiconductor layer (8) and basic unit (9), inner cavity is photovoltaic cell ball chamber (21), one end open, receive and irradiate the light of coming from the light-emitting window (15) of high pressure resonator (2), the other end is by reflective hemisphere (7) shutoff, semiconductor layer (8) is that thickness is 1-5 millimeter, covers the inner surface of photovoltaic cell ball wall (22) by producing the known Czochralski method of semiconductor, the Rotating fields that the N-type be processed into by monocrystalline silicon and P type semiconductor are combined together to form, basic unit (9) is the structure that fixing semiconductor layer (8) forms American football shape, be made up of plastic-steel, aluminium alloy or tinplate, be connected with reflective hemisphere (7) one end, basic unit (9) is welded on reflective hemisphere matrix (20).
2. resonance according to claim 1 adds the photovoltaic cells that can increase photovoltaic and exert oneself, it is characterized in that: described high pressure resonator (2) is cylindric, by resonant power line (11), resonant power line plug (12), light inlet (13), high pressure resonator walls (14), light-emitting window (15), receive light microscopic (16), positive electrode (17), negative electrode (18) and form, outer diameter is 1-2 centimetre, inner diameter is 0.5-1 centimetre, and the part between inside and outside wall is high pressure resonator walls (14); Resonant power line (11) is bifilar copper core power line, and per share copper core diameter is 2-5 millimeter, and outer end connects resonant power line plug (12); Resonant power line (11) is divided into two strands outside high pressure resonator walls (14), be connected with the positive electrode (17) of high pressure resonator (2) and negative electrode (18) respectively, be sub-thread at the metal wire of high pressure resonator walls (14), copper core, diameter is 2-5 millimeter, and helical form is arranged in high pressure resonator walls (14); Light inlet (13) is the opening of high pressure resonator (2) outer end, and diameter is 0.5-1 centimetre; Light microscopic (16) of receiving is the convex lens being arranged on light inlet (13) place, and diameter is 0.5-1 centimetre, and thickness is 0.3-0.8 centimetre, is embedded in the high pressure resonator walls (14) at light inlet (13) place.
3. resonance according to claim 1 adds the photovoltaic cells that can increase photovoltaic and exert oneself, it is characterized in that: described reflective hemisphere (7) hemisphere, height is 2-5 millimeter, bottom surface circular diameter is 4-10 millimeter, the parts of reflection ray sunray (5) being distributed to whole photovoltaic cell ball chamber (21), be positioned at one end of photovoltaic cell ball (1), sphere is towards photovoltaic cell ball chamber (21), top layer is the known mirror structure i.e. hemisphere reflective mirror (19) of the glass that one side is silver-plated, and hemisphere reflective mirror (19) thickness is 1-3 millimeter; Central authorities are solid reflective hemisphere matrixes (20) of hemisphere, reflective hemisphere matrix (20) plastic-steel matter, aluminium alloy matter or tinplate matter; Bottom surface circle centre position is welded with columniform fixed axis (6), fixed axis (6) plastic-steel matter, aluminium alloy matter or tinplate matter, and edge and basic unit (9) weld together, and diameter is 1-2 millimeter, and length is 5-10 millimeter.
4. resonance according to claim 1 adds the photovoltaic cells that can increase photovoltaic and exert oneself, it is characterized in that: described condenser (3) is convex lens, diameter is 0.1-10 rice, thickness is 0.05-2.5 rice, is arranged on can receive arbitrarily solar light irradiation sunray can being focused on to receive light microscopic (16) local.
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
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CN105811876A (en) * | 2016-03-16 | 2016-07-27 | 哈尔滨工程大学 | Chimney effect based radiator with concentrating photovoltaic power generation system |
CN105978470A (en) * | 2016-04-08 | 2016-09-28 | 合肥中南光电有限公司 | Concentrating photovoltaic device |
CN109510584A (en) * | 2018-12-14 | 2019-03-22 | 王美民 | A kind of three-dimensional solar battery structure |
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105811876A (en) * | 2016-03-16 | 2016-07-27 | 哈尔滨工程大学 | Chimney effect based radiator with concentrating photovoltaic power generation system |
CN105978470A (en) * | 2016-04-08 | 2016-09-28 | 合肥中南光电有限公司 | Concentrating photovoltaic device |
CN109510584A (en) * | 2018-12-14 | 2019-03-22 | 王美民 | A kind of three-dimensional solar battery structure |
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