CN205960013U - Emitting diode with hollow photocatalyst microballon layer - Google Patents
Emitting diode with hollow photocatalyst microballon layer Download PDFInfo
- Publication number
- CN205960013U CN205960013U CN201620904854.7U CN201620904854U CN205960013U CN 205960013 U CN205960013 U CN 205960013U CN 201620904854 U CN201620904854 U CN 201620904854U CN 205960013 U CN205960013 U CN 205960013U
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- China
- Prior art keywords
- hollow
- microballoon
- layer
- emitting diode
- photocatalyst
- Prior art date
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- 239000011941 photocatalyst Substances 0.000 title claims abstract description 34
- 239000000758 substrate Substances 0.000 claims abstract description 36
- 239000004065 semiconductor Substances 0.000 claims abstract description 19
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims abstract description 11
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims abstract description 9
- 230000003197 catalytic effect Effects 0.000 claims abstract description 4
- 238000002347 injection Methods 0.000 claims abstract description 3
- 239000007924 injection Substances 0.000 claims abstract description 3
- 239000004005 microsphere Substances 0.000 claims abstract description 3
- 229910044991 metal oxide Inorganic materials 0.000 claims description 13
- 150000004706 metal oxides Chemical class 0.000 claims description 13
- 229910002601 GaN Inorganic materials 0.000 claims description 12
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 6
- 229910052594 sapphire Inorganic materials 0.000 claims description 6
- 239000010980 sapphire Substances 0.000 claims description 6
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 3
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 3
- 229910010037 TiAlN Inorganic materials 0.000 claims description 3
- 238000003491 array Methods 0.000 claims description 3
- 229910000420 cerium oxide Inorganic materials 0.000 claims description 3
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 claims description 3
- 239000010453 quartz Substances 0.000 claims description 3
- 230000000630 rising effect Effects 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 3
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims description 3
- 229910001887 tin oxide Inorganic materials 0.000 claims description 3
- 239000011787 zinc oxide Substances 0.000 claims description 3
- 238000003780 insertion Methods 0.000 claims description 2
- 230000037431 insertion Effects 0.000 claims description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims 2
- 230000001699 photocatalysis Effects 0.000 abstract description 5
- 230000015556 catabolic process Effects 0.000 abstract description 3
- 238000006731 degradation reaction Methods 0.000 abstract description 3
- 230000000694 effects Effects 0.000 abstract description 3
- 238000007146 photocatalysis Methods 0.000 abstract description 3
- 239000005416 organic matter Substances 0.000 abstract description 2
- 238000000746 purification Methods 0.000 abstract description 2
- 230000005540 biological transmission Effects 0.000 abstract 1
- -1 disinfects Substances 0.000 abstract 1
- 238000000605 extraction Methods 0.000 description 5
- 238000000151 deposition Methods 0.000 description 3
- 238000005286 illumination Methods 0.000 description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 230000003139 buffering effect Effects 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910001928 zirconium oxide Inorganic materials 0.000 description 2
- 230000008859 change Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910052500 inorganic mineral Inorganic materials 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000011806 microball Substances 0.000 description 1
- 239000011707 mineral Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 231100000252 nontoxic Toxicity 0.000 description 1
- 230000003000 nontoxic effect Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000011514 reflex Effects 0.000 description 1
- 238000007788 roughening Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000001954 sterilising effect Effects 0.000 description 1
- 238000004659 sterilization and disinfection Methods 0.000 description 1
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- Catalysts (AREA)
Abstract
The utility model belongs to the technical field of the semiconductor, especially, relate to an emitting diode with hollow photocatalyst microballon layer, it includes the substrate, and in range upon range of epitaxial layer on the substrate, when injection current, the light of the certain wavelength of epitaxial layer transmission, its characterized in that: in insert a hollow photocatalyst microballon layer that has photocatalysis purification performance between substrate and the epitaxial layer. The titanium oxide hollow microsphere of hollow photocatalyst microballon for having photocatalytic function, under of the shining of light, the titanium oxide plays the catalytic degradation organic matter, disinfects, air -purifying's effect, and simultaneously, hollow photocatalyst microballon layer increases from the total reflection angle of the light of epitaxial layer directive substrate, and then has improved emitting diode light and taken out efficiency.
Description
Technical field
The utility model belongs to technical field of semiconductors, and more particularly, to a kind of have luminous the two of hollow photocatalyst microballoon layer
Pole pipe.
Background technology
The structure of light emitting diode mainly deposits GaN base epitaxial layer, particularly GaN base on a sapphire substrate at present
LED because of its higher luminous efficiency, in general lighting field achieved with being widely applied.But, the luminescent layer from epitaxial layer
The described light sending may be absorbed by substrate, and the shorter light of the wavelength especially sending in luminescent layer is that substrate is to light
Absorb more serious, lead to the light extraction efficiency of light emitting diode relatively low.
Although light extraction efficiency can be lifted using technology such as graphical PSS substrate, p-type roughening at present, obtain at present
Light extraction efficiency still relatively low.
Meanwhile, now widely used light emitting diode only has single illumination functions, no air cleaning, sterilize, go
The function of dirt, therefore for expanding the application of light emitting diode so as to having multifunctionality is the emphasis studied from now on.
Content of the invention
For solving the above problems, increase the multifunctionality of light emitting diode application, the utility model proposes one kind has sky
The light emitting diode of heart photocatalyst microballoon layer, the epitaxial layer being laminated including substrate and on described substrate, when Injection Current,
Described epitaxial layer launch certain wavelength light it is characterised in that：Between described substrate and epitaxial layer, insertion one has photocatalysis
The hollow photocatalyst microballoon layer of purification function.
Preferably, also there is the buffering reducing both lattice mismatches between described hollow photocatalyst microballoon layer and epitaxial layer
Layer.
Preferably, described hollow photocatalyst microballoon layer is formed by a plurality of metal oxide hollow microballoon close-packed arrays.
Preferably, the refractive index of described metal oxide hollow microballoon is more than described epitaxial layer, increases light emitting diode
Rising angle.
Preferably, described metal oxide hollow microballoon is that titanium oxide, cerium oxide, zinc oxide, tin oxide or zirconium oxide are empty
Heart microballoon.
Preferably, described metal oxide hollow microballoon is titanium oxide tiny balloon.
Preferably, described cushion is made up of the TiAlN layer stacking gradually and AlN layer.
Preferably, a diameter of 0.01 μm ~ 2 μm of described metal oxide hollow microballoon.
Preferably, described epitaxial layer is GaN base semiconductor or GaAs base semiconductor or AlInGaP base semiconductor.
Preferably, described substrate is Sapphire Substrate or gallium nitride substrate or silicon substrate or quartz substrate.
The utility model at least has the advantages that：A hollow photocatalyst microballoon is inserted between epitaxial layer and substrate
Layer, increases the rising angle of light emitting diode, and then lifts light extraction efficiency；Simultaneous oxidation titanium can play degraded under light illumination
Have an opportunity, the sterilized, effect of purify air, increase the application of light emitting diode.
Brief description
Accompanying drawing is used for providing further understanding to of the present utility model, and constitutes a part for specification, with this practicality
New embodiment is used for explaining the utility model together, does not constitute to restriction of the present utility model.Additionally, accompanying drawing data is
Description summary, is not drawn to scale.
The light emitting diode construction schematic diagram of Fig. 1 the utility model specific embodiment.
Accompanying drawing marks：100：Substrate；200；Hollow photocatalyst microballoon layer；210：Tiny balloon；300：Epitaxial layer；310：The
Semi-conductor layer；320：Luminescent layer；330：Second semiconductor layer；400：Cushion.
Specific embodiment
With reference to the accompanying drawings and examples specific embodiment of the present utility model is described in detail.
As shown in Figure 1, a kind of light emitting diode with hollow photocatalyst microballoon layer 200 that the utility model provides,
Including substrate 100, positioned at the hollow photocatalyst microballoon layer 200 on substrate 100 and on hollow photocatalyst microballoon layer 200
Epitaxial layer 300 and be located between the two, for reducing the buffering of hollow photocatalyst microballoon layer 200 and epitaxial layer 300 crystal lattice difference
Layer 400.Wherein, described substrate 100 is conventional Sapphire Substrate in current epitaxial growth, gallium nitride substrate, silicon substrate, quartz
Any one in substrate；And epitaxial layer 300 is GaN base semiconductor or GaAs base semiconductor or AlInGaP base semiconductor,
It includes the first semiconductor layer 310, the second semiconductor layer 330 and is located at luminescent layer 320 between the two, the first semiconductor simultaneously
Layer 310 is electrically different with described second semiconductor layer 330, and that is, the first semiconductor layer 310 is N-type layer or P-type layer, then and second
Semiconductor layer 330 is P-type layer or N-type layer, is respectively configured to provide electronics or hole.In energising, electronics is being sent out with hole
The effective recombination radiation of photosphere 320 lights.
Hollow photocatalyst microballoon layer 200 is by a plurality of metal oxide hollow microballoons 210 with light catalytic purifying function
Close-packed arrays form, a diameter of 0.01 μm ~ 2 μm of each tiny balloon 210, therefore, when the illumination of epitaxial layer 300 transmitting is mapped to
During hollow photocatalyst microballoon layer 200, metal oxide plays the function of PHOTOCATALYTIC AIR-PURIFYING.Epitaxial layer 300 directive lining simultaneously
The light at bottom, increased the angle of total reflection of light when 210 layers of tiny balloon, so lifted light emitting diode luminous efficiency and
Luminous intensity.Specifically, 210 layers of metallic hollow microsphere is that titanium oxide, cerium oxide, zinc oxide, tin oxide or zirconium oxide are hollow micro-
Ball 210.The present embodiment preferred metal oxide hollow microballoon 210 is the larger titanium oxide tiny balloon 210 of refractive index, its refraction
Rate about 2.55 ~ 2.76, serves good reflex to the light injected from epitaxial layer 300, increased going out of light emitting diode
Angular, and then lift its light extraction efficiency.Simultaneous oxidation titanium has the performance of degradation of organic substances, purify air under photocatalysis,
And predominantly pollution-free, the nontoxic mineral products of its catabolite are it is achieved that light emitting diode, while increasing brightness, has concurrently
Cleaning function, increased its application.
The present embodiment, specifically describes the preparation of the light emitting diode that the utility model provides taking GaN base epitaxial layer 300 as a example
Process, provides a Sapphire Substrate 100 first, deposition of titania tiny balloon 210 in Sapphire Substrate 100, secondly adopts
Sputtering method deposits a cushion 400, is finally sequentially depositing N-type GaN using Metalorganic Chemical Vapor Deposition in cushion 400
Layer, InGaN luminescent layer 320 and p-type GaN layer.In order to reduce the crystalline substance between titanium oxide tiny balloon 210 and GaN base epitaxial layer 300
Lattice mismatch, cushion 400 includes the TiAlN layer being sequentially depositing and AlN layer.Under the irradiation of light, hollow photocatalyst microballoon layer 200
Play the effect of catalytic degradation organic matter, sterilization, purify air, meanwhile, hollow photocatalyst microballoon layer 200 also increases from extension
The total reflection of the light of layer directive substrate, increases the brightness of light emitting diode.
Embodiment of above is merely to illustrate the utility model, and is not intended to limit the utility model, the skill of this area
Art personnel, without departing from the spirit and scope of the present invention, can make various modifications and change to the utility model,
Therefore so equivalent technical scheme falls within category of the present utility model, the protection domain of the utility model patent should regard right
Claim scope limits.
Claims (10)
1. a kind of light emitting diode with hollow photocatalyst microballoon layer, the extension being laminated including substrate and on described substrate
Layer, when Injection Current, described epitaxial layer launch certain wavelength light it is characterised in that：In described substrate and epitaxial layer it
Between the insertion one hollow photocatalyst microballoon layer with light catalytic purifying function.
2. a kind of light emitting diode with hollow photocatalyst microballoon layer according to claim 1 it is characterised in that：Described
Also there is between hollow photocatalyst microballoon layer and epitaxial layer the cushion reducing both lattice mismatches.
3. a kind of light emitting diode with hollow photocatalyst microballoon layer according to claim 1 it is characterised in that：Described
Hollow photocatalyst microballoon layer is formed by a plurality of metal oxide hollow microballoon close-packed arrays.
4. a kind of light emitting diode with hollow photocatalyst microballoon layer according to claim 3 it is characterised in that：Described
The refractive index of metal oxide hollow microballoon is more than described epitaxial layer, increases the rising angle of light emitting diode.
5. a kind of light emitting diode with hollow photocatalyst microballoon layer according to claim 3 it is characterised in that：Described
Metal oxide hollow microballoon is titanium oxide, cerium oxide, zinc oxide, tin oxide or zirconia hollow microsphere.
6. a kind of light emitting diode with hollow photocatalyst microballoon layer according to claim 5 it is characterised in that：Described
Metal oxide hollow microballoon is titanium oxide tiny balloon.
7. a kind of light emitting diode with hollow photocatalyst microballoon layer according to claim 2 it is characterised in that：Described
Cushion is made up of the TiAlN layer stacking gradually and AlN layer.
8. a kind of light emitting diode with hollow photocatalyst microballoon layer according to claim 3 it is characterised in that：Described
A diameter of 0.01 μm ~ 2 μm of metal oxide hollow microballoon.
9. a kind of light emitting diode with hollow photocatalyst microballoon layer according to claim 1 it is characterised in that：Described
Epitaxial layer is GaN base semiconductor or GaAs base semiconductor or AlInGaP base semiconductor.
10. a kind of light emitting diode with hollow photocatalyst microballoon layer according to claim 1 it is characterised in that：Institute
Stating substrate is Sapphire Substrate, gallium nitride substrate, silicon substrate or quartz substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620904854.7U CN205960013U (en) | 2016-08-19 | 2016-08-19 | Emitting diode with hollow photocatalyst microballon layer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620904854.7U CN205960013U (en) | 2016-08-19 | 2016-08-19 | Emitting diode with hollow photocatalyst microballon layer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN205960013U true CN205960013U (en) | 2017-02-15 |
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ID=57976304
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201620904854.7U Active CN205960013U (en) | 2016-08-19 | 2016-08-19 | Emitting diode with hollow photocatalyst microballon layer |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN205960013U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110444641A (en) * | 2019-08-13 | 2019-11-12 | 黄山博蓝特半导体科技有限公司 | A kind of graphical compound substrate of high brightness and preparation method thereof |
| CN111312869A (en) * | 2020-03-04 | 2020-06-19 | 深圳市炬诠科技有限公司 | LED chip with nano titanium dioxide layer and preparation method |
-
2016
- 2016-08-19 CN CN201620904854.7U patent/CN205960013U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110444641A (en) * | 2019-08-13 | 2019-11-12 | 黄山博蓝特半导体科技有限公司 | A kind of graphical compound substrate of high brightness and preparation method thereof |
| CN111312869A (en) * | 2020-03-04 | 2020-06-19 | 深圳市炬诠科技有限公司 | LED chip with nano titanium dioxide layer and preparation method |
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| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |