CN205959969U - Wafer structure - Google Patents
Wafer structure Download PDFInfo
- Publication number
- CN205959969U CN205959969U CN201620455672.6U CN201620455672U CN205959969U CN 205959969 U CN205959969 U CN 205959969U CN 201620455672 U CN201620455672 U CN 201620455672U CN 205959969 U CN205959969 U CN 205959969U
- Authority
- CN
- China
- Prior art keywords
- scribing
- functional layer
- circle structure
- crystal circle
- labelling
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Abstract
The utility model discloses a wafer structure, wafer structure is used for forming a plurality of tube cores, includes: semiconductor substrate, semiconductor substrate has relative first surface and second surface, be located at least one first functional layer and at least one second functional layer on semiconductor substrate's the first surface, and at least one first functional layer with at least one second functional layer includes public first sacrifice layer, at least one second functional layer is arranged in the scribing and says, and be arranged in a plurality of scribing marks that the scribing was said, a plurality of scribing marks are used for separating when laser cutting adjacent tube core in a plurality of tube cores. Wafer structure adopts first sacrifice layer to put the intensity that improves wafer structure in the technology into production to protection wafer structure and production facility.
Description
Technical field
This utility model is related to field of semiconductor processing, more particularly, to Wafer Dicing structure.
Background technology
The manufacture process of semiconductor integrated circuit, generally can be divided into wafer manufacture, wafer sort, cutting, encapsulation and
Test afterwards.Wafer (wafer) is the chip for making silicon semiconductor production of integrated circuits, and shape is generally circular.Wafer
For example, 6 inches, 8 inches or 12 inches of size.The functional layer being made up of stacking dielectric film and functional membrane is formed on wafer,
Form the multiple tube cores being arranged in array using functional layer.Then, On-Wafer Measurement step, will not to make testing electrical property to tube core
Qualified tube core is eliminated, and qualified tube core is cut into an independent tube core from wafer.Afterwards, encapsulation is by qualified tube core
Packed and routing, form the chip after encapsulation, finally need to carry out testing electrical property again to guarantee the quality of integrated circuit.
Multiple tube cores are formed on wafer and can obtain the good multiple products of consistency of performance in batches, and can be notable
Reduce the manufacturing cost of tube core.Therefore, wafer cutting is the steps necessary of modern semiconductor processes.The technique of wafer cutting includes
Machine cuts or cut.It is pre-formed dicing lane between adjacent tube core.In machine cuts, using flywheel knife or piece knife
Along dicing lane cutting crystal wafer, remove the most of material in dicing lane.Because machine cuts produce chip, therefore, in machinery
Also need to cleaning during cutting and remove chip.In cut, in the front of wafer, laser focusing is formed in inside wafer and change
To form initial crack, then laser moves matter layer along dicing lane, forms glued membrane at the back side of wafer, then passes through to extend glue
Membrance separation tube core.
Compared with machine cuts, cut will not produce chip, such that it is able to reduce processing step.The essence of cut
Degree height is it is thus only necessary to provide narrow dicing lane, such that it is able to improve the utilization rate of wafer.The shortcoming of cut is to be difficult to penetrate
Functional layer on wafer.In On-Wafer Measurement, the functional layer in dicing lane can provide the connection of multiple tube cores, realizes multiple pipes
The serial or parallel connection test of core.If however, forming functional layer in dicing lane, due to blocking of functional layer, in dicing lane
The continuous initial crack of difficult to form, leads to separation the failure even damage of tube core of tube core.
Therefore, it is intended that designing new dicing lane for cut further, such that it is able to for separating via dicing lane
Multiple tube cores that functional layer is connected to each other.
Utility model content
In view of this, the purpose of this utility model is to provide a kind of wafer knot including functional layer and being easy to cut
Structure.
According to this utility model, provide a kind of crystal circle structure, for forming multiple tube cores it is characterised in that including：Partly lead
Body substrate, described Semiconductor substrate has relative first surface and second surface；The first table positioned at described Semiconductor substrate
At least one on face first functional layer and at least one second functional layer, and at least one first functional layer described and described
At least one second functional layer includes the first public sacrifice layer, and at least one second functional layer described is located in dicing lane；With
And the multiple scribing labellings being located in dicing lane, the plurality of scribing labelling for separating the plurality of tube core in cut
In adjacent tube core.
Preferably, the plurality of scribing is labeled as at least one of：The groove of described first surface upper shed, described
The groove of two surface upper sheds or the opening extending to described second surface from described first surface.
Preferably, the plurality of scribing labelling is located at below described first sacrifice layer.
Preferably, the thickness of described first sacrifice layer is 0.5 micron～5 microns.
Preferably, the bearing of trend of the plurality of scribing labelling is consistent with the direction of laser scanning movement.
Preferably, the total length that the plurality of scribing labelling extends along described dicing lane accounts for described dicing lane its length
Ratio be less than 50%.
Preferably, the width of the plurality of scribing labelling is 5 microns～120 microns.
Preferably, at least one first functional layer described is separated by described dicing lane.
Preferably, the plurality of tube core is respectively MEMS microphone, at least one second functional layer described also include vibrating diaphragm,
Second sacrifice layer and back electrode, described first sacrifice layer is used for providing the anchor area for fixing described vibrating diaphragm, described second sacrifice
Layer is used for separating described vibrating diaphragm and described back electrode, is formed and reach described vibrating diaphragm from described second surface in described Semiconductor substrate
The operatic tunes.
Preferably, described scribing labelling and the described operatic tunes are formed simultaneously.
In the above-mentioned crystal circle structure according to this utility model embodiment, improved in production technology using the first sacrifice layer
The intensity of crystal circle structure, thus protect crystal circle structure and production equipment.
In a preferred embodiment, using the scribing labelling of predetermined length and width, it is possible to reduce scribing machine is aligned
The frequency of precision self-inspection, thus reduce production cost and tube core cost.
In another preferred embodiment, using the first sacrifice layer of predetermined thickness, selected using etching in etching
Property, form the operatic tunes and scribing labelling in the semiconductor substrate simultaneously.Retain the first sacrifice layer after the etching and be located at scribing labelling
Top part it is provided that after cut tube core intensity.Due to the first sacrifice layer THICKNESS CONTROL within a predetermined range,
It can thus be avoided crystal circle structure fragmentation in manufacture and transmitting procedure, and avoid crystal circle structure due to the first sacrifice layer mistake
Thick and deform, thus improving the yield rate of tube core.
Brief description
By the description to this utility model embodiment referring to the drawings, of the present utility model above-mentioned and other mesh
, feature and advantage will be apparent from, in the accompanying drawings：
Fig. 1 a to 1c is schematic perspective view, top view and the sectional view of the crystal circle structure according to prior art.
Fig. 2 a to 2c is that crystal circle structure according to the embodiment of the present utility model solid after forming scribing labelling is shown
Intention, top view and sectional view.
Fig. 3 a to 3c be crystal circle structure according to the embodiment of the present utility model schematic perspective view after release structure,
Top view and sectional view.
Fig. 4 a to 4c is crystal circle structure according to the embodiment of the present utility model schematic perspective view when laser irradiates, bows
View and sectional view.
Fig. 5 is the sectional view in laser irradiating state for the crystal circle structure according to embodiment of the present utility model.
Specific embodiment
It is more fully described this utility model hereinafter with reference to accompanying drawing.In various figures, identical element is using similar
Reference representing.For the sake of clarity, the various pieces in accompanying drawing are not necessarily to scale.Furthermore, it is possible to it is not shown
Some known parts.
It should be appreciated that when describing certain structure, when by one layer, region be referred to as located at another layer, another region
" above " or when " top ", can refer to be located immediately at another layer, above another region, or at it with another layer, another
Other layers or region is also comprised between region.And, if this structure is overturn, this layer, a region will be positioned at another
Layer, another region " below " or " lower section ".If being located immediately at another layer, another region above scenario to describe,
Herein will be using the form of presentation of " A is directly on B " or " A on B and therewith adjoin ".
It is to be understood that term " first ", " second " etc. are only used for describing purpose in description of the present utility model,
And it is not intended that indicating or hint relative importance.Additionally, in description of the present utility model, unless otherwise stated, " many
Individual " it is meant that two or more.In this application, term " crystal circle structure " is represented and is formed using wafer and include partly to lead
Body substrate and the semiconductor structure of functional layer, wherein, wafer is mainly used in providing the substrate of semiconductor device.
This utility model can present in a variety of manners, some of them example explained below.
Fig. 1 a to 1c is schematic perspective view, top view and the sectional view of the crystal circle structure according to prior art.In Figure 1b
Line AA the interception position of sectional view shown in Fig. 1 c is shown.
As shown in Figure 1 a to 1c, crystal circle structure 100 includes Semiconductor substrate 110, is located at the first table of Semiconductor substrate 110
Multiple functional layers 150,160 and 180 on face, the glued membrane 120 on the relative second surface of Semiconductor substrate 110.This crystalline substance
Circle structure 100 provides tube core D1 and D2 of two being separated by dicing lane, and wherein, tube core D1 includes Semiconductor substrate 110 and
Part and functional layer 150, tube core D2 includes another part and the functional layer 160 of Semiconductor substrate 110.Functional layer 180 is used
Multiple interconnection between offer tube core D1 and D2.
Typically, functional layer can be formed by multiple dielectric films and multiple metallic film stacks.Class according to tube core D1 and D2
Type is different, and the plurality of functional layer 150,160 is different with 180 structure.For example, tube core D1 and D2 can be analog circuit or number
Word circuit, wherein, functional layer is used for forming at least a portion structure of transistor.Electric as the interlayer of transistor using dielectric film
Medium, forms contact and the conductive channel reaching active area using metal film.Tube core D1 and D2 can also be MEMS
(MEMS) chip, such as MEMS microphone, then functional layer be used for forming MEMS structure.MEMS microphone is formed using dielectric film
Sacrifice layer and anchor area, form vibrating diaphragm and the back electrode of MEMS microphone using metal level.
When tube core D1 and D2 is MEMS microphone, each tube core corresponds to a MEMS microphone.Functional layer 180 is used for
Public anchor area or the electrical connection for wafer sort of tube core D1 and D2 are provided.Work(in On-Wafer Measurement, in dicing lane
Ergosphere can provide the connection of multiple tube cores, realizes the serial or parallel connection test of multiple tube cores.After On-Wafer Measurement completes, enter
Row cut, tube core D1 with D2 is separated, and is packaged into single product respectively.
In cut, in the front of crystal circle structure 100, laser L1 is focused on Semiconductor substrate 110 and is internally formed and change
Matter layer is to form initial crack.Laser L1 moves along dicing lane.Due to there is functional layer 180, laser L1 in dicing lane
Incident energy is fallen by functional layer scattering, and therefore laser L1 is difficult to reach the lower section of functional layer 180.As a result, difficult in dicing lane
To form continuous initial crack.When glued membrane 120 extends, due to interruption below functional layer 180 for the initial crack, therefore manage
The separation of core D1 and D2 may fail, or even the damage of tube core D1 and D2.
The present inventors have noted that, in cut, scribing machine moves on wafer stepwise, and its alignment precision is subject to error
Accumulate and reduce.Therefore, if laser beam deviate from the center of dicing lane, adjacent tubes cannot will be separated when extending glued membrane
Core, its reason is the narrower width of scribing labelling, and laser beam departure degree has exceeded preferred width range, such as 5 microns, that is,
2.5 microns of +/-, thus modify layer not connecting with scribing labelling, does not form complete scribing initial imperfection.
If the multiple tube cores on wafer produce undivided bad tube core because laser beam deviates, then this part pipe
Core will be given up it is impossible to put into follow-up production.If not identifying undivided bad tube core, automatization when producing
Production line uses by mistake, leads to dual-die or even the form of Multi-core to be enclosed in subsequent product encapsulation.Finally, in MEMS microphone
In the case of, the problem that dimensional packaged circuit board and IC chip supporting thereon are all given up can be caused, lead to cost to raise.
Fall in the center of dicing lane for each laser beam of guarantee, need to increase the frequency of scribing machine alignment precision self-inspection, that is,
Make it every repeating several times to move, just correction once eliminates the alignment error of accumulation.However, laser beam typically requires aborning
Repeat mobile tens times.As a result, increase ten times during the machine of scribing machine, production efficiency and equipment depreciation have been respectively formed larger
Pressure, and lead to production cost and tube core cost to raise.
Fig. 2 a to 2c is that crystal circle structure according to the embodiment of the present utility model solid after forming scribing labelling is shown
Intention, top view and sectional view.Line AA in figure 2b illustrates the interception position of sectional view shown in Fig. 2 c.
Tube core D1 and D2 of crystal circle structure 200 include being separated by dicing lane two.In this embodiment, tube core D1 and D2
It is respectively MEMS microphone, and there is identical structure.Crystal circle structure is hereafter described only taking tube core D1 as a example.
Crystal circle structure 200 includes Semiconductor substrate 210 and the first sacrifice layer sequentially forming in Semiconductor substrate 210
271st, vibrating diaphragm 272, the second sacrifice layer 281 and back electrode 282.In the region of tube core D1, the first sacrifice layer 271, vibrating diaphragm 272,
Second sacrifice layer 281 and back electrode 282 as at least one the first functional layer, for forming the structure of MEMS microphone.As
The example of MEMS microphone, forms the opening 283 reaching vibrating diaphragm 272 in the second sacrifice layer 281 and back electrode 282.Via opening
Mouth 283, forms the first electrode 284 electrically connecting with vibrating diaphragm 272 further.Second electrode is formed on the surface of back electrode 282
285.Region between tube core D1 and D2 is as dicing lane.First sacrifice layer 271 extends in dicing lane, as the second function
Layer.The second additional functional layer can also be included in dicing lane, for providing the connection between tube core D1 and D2.
In On-Wafer Measurement, the functional layer in dicing lane can provide the connection of multiple tube cores, realizes the string of multiple tube cores
Connection or test in parallel.After On-Wafer Measurement completes, carry out cut, tube core D1 with D2 is separated, be packaged into respectively individually
Product.
Different from the crystal circle structure 100 of the prior art shown in Fig. 1 a to 1c, the crystal circle structure 200 of this embodiment also includes
Multiple scribing labellings 290.The plurality of scribing labelling 290 is the opening being formed in Semiconductor substrate 210, positioned at the first sacrifice layer
271 lower section, and bearing of trend is consistent with laser mobile route.
In one example, scribing labelling can be formed using etch process.In order to limit the position of opening, can adopt
Photoresist mask, forms opening in the mask.Then, using photoresist mask, by dry etching, such as ion beam milling
Etching, plasma etching, reactive ion etching, laser ablation, or by wherein using the wet etching of etchant solutions, choosing
Remove to selecting property the expose portion of Semiconductor substrate, thus forming opening, as scribing labelling 290.After the etching, by
Dissolve in solvent or ashing removes photoresist mask.
The operatic tunes 211 of MEMS microphone in above-mentioned etching, while forming scribing labelling 290, can be formed, its
In, the first sacrifice layer 271 is for example as stop-layer.Due to forming scribing labelling 290 and the operatic tunes 211 in an etching step,
Process costs therefore can be saved.
The thickness of the first sacrifice layer 271 is preferably 0.5 micron～5 microns.If the thickness of the first sacrifice layer 271 is excessively thin,
Then in etching, the first sacrifice layer 271 may penetrate, and so that etching machines is suffered damage.Whereas if the thickness of the first sacrifice layer 271
Spend thickness, then not only process costs increase, and the stress that the first sacrifice layer 271 produces will be excessive, leads to Semiconductor substrate
210 deformation.
The total length that scribing labelling 290 extends along dicing lane is it is preferable that the ratio accounting for dicing lane its length is less than
50%.If the length of scribing labelling 290 is long, the intensity of crystal circle structure 200 may be led to be deteriorated, thus in crystal circle structure
Chipping in 200 course of conveying.
The width of scribing labelling 290 is it is preferable that about 5 microns～120 microns.In cut, this width allows relatively
Big alignment error.If the width of scribing labelling 290 is too small, laser alignment can be led to difficult.If scribing labelling 290
Width is excessive, then the intensity of crystal circle structure 200 may be led to be deteriorated, thus occurring broken in the course of conveying of crystal circle structure 200
Split.
Fig. 3 a to 3c be crystal circle structure according to the embodiment of the present utility model schematic perspective view after release structure,
Top view and sectional view.In order to discharge vibrating diaphragm 272, for example, can optionally remove first sacrificial using above-mentioned etch process
Domestic animal layer 271 and the expose portion of the second sacrifice layer 281.Line AA in fig 3b illustrates the interception position of sectional view shown in Fig. 3 c.
In an example, the upper surface of crystal circle structure 200 is covered so that etchant solutions using photoresist mask
Enter the operatic tunes 211 from the lower surface of crystal circle structure 200.This etchant solutions etches the expose portion of the first sacrifice layer 271, from
And expose the lower surface of vibrating diaphragm 272 mid portion.In the peripheral part of vibrating diaphragm 272, the remainder of the first sacrifice layer 271 is formed
The anchor area of MEMS microphone.Further, the mid portion of vibrating diaphragm 272 can include additional opening, and etchant solutions are permissible
Reach the second sacrifice layer 281 via additional opening further.This etchant solutions etches the sudden and violent of the second sacrifice layer 281 further
Dew part, thus expose the upper surface of vibrating diaphragm 272 mid portion.
In another example, can be using the structure of etching release twice.Etching is similar with examples detailed above for the first time, its
In, the expose portion of the first sacrifice layer 271 is removed via the operatic tunes 211.However, different from examples detailed above, carry on the back electricity in this example
Pole 282 can include additional opening, and etchant solutions can reach the second sacrifice layer 281 via additional opening further.
This etchant solutions etches the expose portion of the second sacrifice layer 281 further, thus exposing the upper table of vibrating diaphragm 272 mid portion
Face.
After release structure, as shown in Figure 3 C, the upper and lower surface of vibrating diaphragm 272 mid portion is all not attached to sacrificial
On domestic animal layer, such that it is able to free vibration under the excitation of the sound wave transmitting via the operatic tunes.
Fig. 4 a to 4c is crystal circle structure according to the embodiment of the present utility model schematic perspective view when laser irradiates, bows
View and sectional view.Line AA in fig. 4b illustrates the interception position of sectional view shown in Fig. 3 c, and line BB in fig. 4b illustrates Fig. 5
The interception position of shown sectional view.
In cut, in the front of crystal circle structure 200, laser L1 is focused on Semiconductor substrate 210 and is internally formed and change
Matter layer is to form initial crack.Laser L1 moves along dicing lane.In dicing lane, the opening depth of scribing labelling 290 reaches
The position consistent with the initial crack that laser L1 is formed, so that the opening of discrete initial crack and scribing labelling 290
Connect, still can form continuous path.
Crystal circle structure 200 is for example with being adhesively fixed on glued membrane 220.When glued membrane 220 extends, initial crack and scribing
Labelling 290 together provides the path of cracks can spread, so that tube core D1 and D2 is separated from one another.
Fig. 5 is the sectional view in laser irradiating state for the crystal circle structure according to embodiment of the present utility model.As Fig. 5 institute
Show, scan on the path of movement in laser L1, laser L1 reaches in Semiconductor substrate 210.Partly lead because scribing labelling 290 runs through
Body substrate 210, initial crack is discontinuous, shown in dotted line.
When laser irradiates, can take multiple scan along dicing lane, respectively laser L1 be focused on Semiconductor substrate
210 different depth, thus form the initial crack of the multiple different depths extending along dicing lane.In this embodiment, just
Beginning crackle forms continuous path together with scribing labelling 290.Preferably, scribing labelling 290 can be accurate in laser separation
Control the separation point position of adjacent tube core.
In this embodiment, the width of scribing labelling 290 is about 5 microns～120 microns, thus in cut, can
To allow the mechanical strength of larger alignment error and maintenance crystal circle structure.
The crystal circle structure of above-described embodiment can apply in various types of tube cores.Before cut, adjacent
Tube core utilizes the functional layer in dicing lane to realize mechanically and electrically, for example, realizing the parallel connection of multiple tube cores in On-Wafer Measurement
Or series connection test.After On-Wafer Measurement, move the continuous of both the initial cracks being formed using scribing labelling and laser scanning
Path, tube core is separated from one another, it is then packaged as single product.
In the above-described embodiment, describing scribing labelling 290 is to extend to from the first surface of Semiconductor substrate 210
The opening on two surfaces.However, the invention is not restricted to this, scribing labelling 290 can be at least one of：On described first surface
The groove of opening, the groove of described second surface upper shed or extend to opening of described second surface from described first surface
Mouthful.
In the above description, known structural element and step are not described in detail.But this area
It will be appreciated by the skilled person that corresponding structural element and step can be realized by various technological means.In addition, for shape
Become identical structural element, those skilled in the art can be devised by the not identical side with process as described above
Method.Although in addition, respectively describing each embodiment above, but it is not intended that the measure in each embodiment can not have
It is used in combination sharply.
Above embodiment of the present utility model is described.But, the mesh that these embodiments are merely to illustrate that
, and be not intended to limit scope of the present utility model.Scope of the present utility model is limited by claims and its equivalent
Fixed.Without departing from scope of the present utility model, those skilled in the art can make multiple replacements and change, and these substitute and change
All should fall within the scope of this utility model.
Claims (10)
1. a kind of crystal circle structure, for forming multiple tube cores it is characterised in that including：
Semiconductor substrate；
At least one first functional layer in described Semiconductor substrate and at least one second functional layer, and described at least
One the first functional layer and at least one second functional layer described include the first public sacrifice layer, at least one second work(described
Ergosphere is located in dicing lane；And
Multiple scribing labellings in dicing lane, the plurality of scribing labelling is used in cut separating the plurality of pipe
Adjacent tube core in core.
2. crystal circle structure according to claim 1 is it is characterised in that described Semiconductor substrate has relative first surface
And second surface, at least one first functional layer described and at least one second functional layer described be located on described first surface,
The plurality of scribing is labeled as at least one of：Open on the groove of described first surface upper shed, described second surface
The groove of mouth or the opening extending to described second surface from described first surface.
3. crystal circle structure according to claim 1 is it is characterised in that the plurality of scribing labelling is located at described first sacrifice
Below layer.
4. crystal circle structure according to claim 1 is it is characterised in that the thickness of described first sacrifice layer is 0.5 micron～5
Micron.
5. crystal circle structure according to claim 1 is it is characterised in that the bearing of trend of the plurality of scribing labelling and laser
The direction of scanning movement is consistent.
6. crystal circle structure according to claim 5 is it is characterised in that the plurality of scribing labelling prolongs along described dicing lane
The ratio that the total length stretched accounts for described dicing lane its length is less than 50%.
7. crystal circle structure according to claim 5 it is characterised in that the plurality of scribing labelling width be 5 microns～
120 microns.
8. crystal circle structure according to claim 1 is it is characterised in that at least one first functional layer described is by described scribing
Road separates.
9. crystal circle structure according to claim 2 is it is characterised in that the plurality of tube core is respectively MEMS microphone, institute
State at least one second functional layer and also include vibrating diaphragm, the second sacrifice layer and back electrode, described first sacrifice layer is used for for offer
The anchor area of fixing described vibrating diaphragm, described second sacrifice layer is used for separating described vibrating diaphragm and described back electrode, described Semiconductor substrate
The middle operatic tunes being formed from the described second surface described vibrating diaphragm of arrival.
10. crystal circle structure according to claim 9 is it is characterised in that described scribing labelling and the described operatic tunes are formed simultaneously.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620455672.6U CN205959969U (en) | 2016-05-18 | 2016-05-18 | Wafer structure |
| US15/241,956 US20170053832A1 (en) | 2015-08-20 | 2016-08-19 | Wafer structure and processing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620455672.6U CN205959969U (en) | 2016-05-18 | 2016-05-18 | Wafer structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN205959969U true CN205959969U (en) | 2017-02-15 |
Family
ID=57967362
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201620455672.6U Active CN205959969U (en) | 2015-08-20 | 2016-05-18 | Wafer structure |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN205959969U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109987573A (en) * | 2019-04-02 | 2019-07-09 | 武汉耐普登科技有限公司 | Semiconductor structure and its manufacturing method |
-
2016
- 2016-05-18 CN CN201620455672.6U patent/CN205959969U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109987573A (en) * | 2019-04-02 | 2019-07-09 | 武汉耐普登科技有限公司 | Semiconductor structure and its manufacturing method |
| CN109987573B (en) * | 2019-04-02 | 2021-12-14 | 无锡韦感半导体有限公司 | Semiconductor structure and manufacturing method thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US5691248A (en) | Methods for precise definition of integrated circuit chip edges | |
| TWI392054B (en) | Process for the collective fabrication of 3d electronic modules | |
| US20050158967A1 (en) | Semiconductor chip singulation method | |
| US20170053832A1 (en) | Wafer structure and processing method thereof | |
| US8530984B2 (en) | Semiconductor device structures and their fabrication | |
| US20110033979A1 (en) | Edge connect wafer level stacking | |
| KR102149332B1 (en) | Capacitive micromachined ultrasonic transducer and method of singulating the same | |
| JP3795040B2 (en) | Manufacturing method of semiconductor device | |
| US20110193200A1 (en) | Semiconductor wafer chip scale package test flow and dicing process | |
| CN106467289B (en) | Wafer structure and wafer processing method | |
| JP2015057844A (en) | Wiring forming jig | |
| CN109052307B (en) | Wafer structure and wafer processing method | |
| CN205959969U (en) | Wafer structure | |
| KR101393430B1 (en) | piezoelectric thin film specimen for measuring tensile strength and fatigue properties and manufacturing method thereof | |
| JP2021040002A (en) | Semiconductor storage device and method for manufacturing semiconductor storage device | |
| CN103762221B (en) | Wafer level packaging structure and forming method and packaging method of wafer level packaging structure | |
| CN107591339B (en) | Test structure and test method | |
| CN112018043A (en) | Method for manufacturing wafer and method for manufacturing laminated device chip | |
| CN204857717U (en) | Wafer structure | |
| US20210253421A1 (en) | Method with mechanical dicing process for producing mems components | |
| CN111696968B (en) | Method for manufacturing semiconductor structure | |
| CN113871315A (en) | Tube core failure analysis method and stacked packaging chip failure analysis method | |
| CN112010257B (en) | Wafer structure and wafer processing method | |
| US10418334B2 (en) | Semiconductor device including corner recess | |
| CN205050806U (en) | Wafer structure |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20180806 Address after: 261000 Fengshan Road, Fangzi District, Weifang, Shandong Province, No. 68 Patentee after: Shandong Gettop Acoustic Co.,Ltd. Address before: 100191 Beijing Haidian District Zhichun Road 23 quantum Ginza 1002 room Patentee before: Beijing Acuti Microsystems Co., Ltd. |