CN205934011U - Compound scanning magnetic field coating machine - Google Patents
Compound scanning magnetic field coating machine Download PDFInfo
- Publication number
- CN205934011U CN205934011U CN201620838274.2U CN201620838274U CN205934011U CN 205934011 U CN205934011 U CN 205934011U CN 201620838274 U CN201620838274 U CN 201620838274U CN 205934011 U CN205934011 U CN 205934011U
- Authority
- CN
- China
- Prior art keywords
- magnetic field
- target
- magnet steel
- coating machine
- cathode cavity
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Abstract
The utility model provides an utilization ratio is low, and the target amount of purchase is big, manual work technical problem such as have high input that compound scanning magnetic field coating machine, it solves current cathode target material. Its technical scheme main points are: including the real empty room body, negative pole cavity (1), magnet steel parts (2), horizontal drive parts (3) and vertical drive parts (4), negative pole cavity (1) and the real sealed component sputter room of the empty room body, negative pole cavity (1) bottom is equipped with the target groove, and install in negative pole cavity (1) magnet steel parts (2), form to seal the annular magnetic field, negative pole cavity (1) upper end is equipped with vertical drive parts (4), vertical drive parts (4) upper end connection horizontal drive parts (3), horizontal drive part (3) is connected in magnet steel part (2). It is applied to vacuum sputter coating.
Description
Technical field
The utility model is related to a kind of vacuum sputtering film plating machine, particularly a kind of compound scan magnetic field coating machine.
Background technology
At present, common plane negative electrode plated film function, is all using the cation producing during gas glow discharge and target
Energy exchange between the surface atom of material, shifts to substrate material from raw material, realizes the deposit of film, that is, complete plated film
Operation, the target utilization of planar cathode only only has 15%~25%.
Content of the invention
The purpose of this utility model is to provide a kind of utilization rate substantially increasing cathode targets, decreases target buying
Amount, extends the time changing target, increased the time of production line continuous production, reduces a kind of artificial compound scan magnetic putting into
Field coating machine.
The utility model solves its technical problem and be employed technical scheme comprise that:Including vacuum chamber body, cathode cavity 1, magnetic
Steel part 2, laterally driven part 3 and zigzag tread patterns part 4, described cathode cavity 1 and the sealing of vacuum chamber body constitute sputtering chamber, institute
State cathode cavity 1 bottom and be provided with target groove, magnet steel part 2 is arranged in cathode cavity 1, form closed ring magnetic field, described the moon
Pole cavity 1 upper end is provided with zigzag tread patterns part 4, and zigzag tread patterns part 4 upper end connects laterally driven part 3, described magnet steel part 2
Connect laterally driven part 3.
Cathode cavity 1 bottom of the present utility model is provided with target groove, installs target 5 in target groove.
Magnet steel part 2 magnetic line of force of the present utility model can penetrate target 5.
Laterally driven part 3 of the present utility model and zigzag tread patterns part 4 are provided with control panel, execution magnet steel part
Move back and forth.
Cathode cavity 1 of the present utility model is provided with cooling circulating water road 6.
The feature of the present invention:
1), the magnet steel part of the present invention be horizontally installed with servo motor driving device, the top control plane of target does horizontal stroke
To scanning motion, drive whole Cathod magnetic field to do transversal scanning campaign in fixing target plane, broaden target etched area
The width of area, thus greatly improve the utilization rate of cathode targets;
2), the magnet steel part of the present invention be longitudinally provided with servo motor driving device, the upper controlling party plane of target is done vertical
To scanning motion, drive whole Cathod magnetic field to do longitudinal scanning movement in fixing target plane, disperseed magnetic field two ends
Highest magnetic line of force aggregate site, it is to avoid too early being punctured by the magnetic field accumulation point of two ends, thus improve of target of conventional cathode
The utilization rate of cathode targets;
3), magnet steel part under atmospheric condition, without being immersed in water, magnetic force will not be produced gradually because of the long-term etch of water
Decay;Magnet steel part and target are also completely isolated, one in vacuum cavity, one, outside cavity, also will not be sputtered
When produced by Ions Bombardment target thermal conductivity cause magnet demagnetization because of high temperature;
4), transmission and magnet steel part all outside vacuum cavity, facilitate repair and maintenance.
Agent structure is made up of several parts once:
1), cathode cavity:Seal with vacuum chamber body and constitute sputtering chamber, fastening target, magnet steel part are installed as an entirety,
Support compound scan negative electrode overall structure;
2), magnet steel part:It is the critical piece of composition Cathod magnetic field, forms closed ring magnetic field, the magnetic line of force penetrates target;
3), laterally driven part:By automatically controlled instruction, execute the traverse motion of magnet steel part;
4), zigzag tread patterns part:By automatically controlled instruction, execute the longitudinally reciprocating motion of magnet steel part;
5), target:As film sputter source material;
6), the special groove of cathode and sealing copper coin assembling constitute cooling circulating water road, the target to heating in sputtering process
Material is cooled down.
The beneficial effects of the utility model are:Present invention is mainly used for vacuum sputtering film plating machine, it is fitted in the work of coating machine
On skill section chamber, the film of multiple material can be prepared, including conductor, semiconductor, compound etc..By Cathod magnetic field in fixation
Target plane compound scan, has widened the area of target etch areas, eliminates the constant congruent point in traditional bar magnet termination magnetic field
Situation, substantially increases the utilization rate of cathode targets, decreases target amount of purchase, extends the time changing target, increased production
The time of line continuous production, reduce the artificial effective means putting into, being control product cost, meanwhile, the utility model scanning is flat
Face sputter cathode can accomplish target utilization > 60%.It is mainly applied to conductor, semiconductor, the multiple material such as compound
Preparation.
Brief description
Fig. 1 is structural representation of the present utility model;
Fig. 2 is Product Rendering of the present utility model;
Fig. 3 is existing Product Rendering.
In figure:1- cathode cavity, 2- magnet steel part, the laterally driven part of 3-, 4- zigzag tread patterns part, 5- target, 6- are cold
But cyclic water channel.
Specific embodiment
With reference to the accompanying drawings and examples the utility model is described in further details.
Embodiment 1, refering to Fig. 1 to Fig. 3, the utility model includes vacuum chamber body, cathode cavity 1, magnet steel part 2, laterally
Driver part 3 and zigzag tread patterns part 4, described cathode cavity 1 and the sealing of vacuum chamber body constitute sputtering chamber, described cathode cavity 1
Bottom is provided with target groove, and magnet steel part 2 is arranged in cathode cavity 1, forms closed ring magnetic field, described cathode cavity 1 upper end
It is provided with zigzag tread patterns part 4, zigzag tread patterns part 4 upper end connects laterally driven part 3, described magnet steel part 2 connects horizontal drive
Dynamic component 3.
Embodiment 2, refering to Fig. 1 to Fig. 3, the utility model also can be provided with target groove in cathode cavity 1 bottom, in target groove
Target 5 is installed.Remaining is with the combination of other any embodiment of the present utility model or 2 above example.
Embodiment 3, refering to Fig. 1 to Fig. 3, the utility model also can penetrate target 5 in magnet steel part 2 magnetic line of force.Remaining
Combination with other any embodiment of the present utility model or 2 above example.
Embodiment 4, refering to Fig. 1 to Fig. 3, laterally driven part 3 of the present utility model and zigzag tread patterns part 4 are provided with electricity
Control equipment, the reciprocating motion of execution magnet steel part.Remaining is with other any embodiment of the present utility model or 2 above example
Combination.
Embodiment 5, refering to Fig. 1 to Fig. 3, cathode cavity 1 of the present utility model is provided with cooling circulating water road 6.Remaining is same
Other any embodiment of the present utility model or the combination of 2 above example.
Embodiment 6, refering to Fig. 1 to Fig. 3, target of the present utility model is fixed on cathode, and glass substrate is under target
Along the horizontal rolling transmission of magnet steel part, target profile is rectangle, and the distance between substrate and target are 70~100mm, work pressure
It is about by force 0.5Pa.
The magnetic field of magnet steel part controls the trajectory of electron motion in electric field, and the plasma being bound in close target surface is in magnetic
Circle around target surface with this scanning track in the presence of, electronics fly in the presence of electric field during substrate with
Ar atom collides, and ionizes out substantial amounts of Ar ion and secondary electron, and electronics constantly touches with Ar atom during flying to substrate
Hit, produce more Ar ions and electronics.Ar ion accelerates to bombard target in the presence of electric field, sputters substantial amounts of target former
Son, in neutral target atom(Or molecule)It is deposited on deposit film forming on substrate.The target face meeting of magnet steel part compound scan part
Uniformly it is etched, and common plane cathode target face is to be carved along the magnetic force line length toroid region of fixing magnet steel part
Erosion.Remaining is with the combination of other any embodiment of the present utility model or 2 above example.
Claims (5)
1. a kind of compound scan magnetic field coating machine, is characterized in that:It includes vacuum chamber body, cathode cavity(1), magnet steel part(2)、
Laterally driven part(3)With zigzag tread patterns part(4), described cathode cavity(1)Seal with vacuum chamber body and constitute sputtering chamber, described
Cathode cavity(1)Bottom is provided with target groove, magnet steel part(2)It is arranged on cathode cavity(1)Interior, form closed ring magnetic field, institute
State cathode cavity(1)Upper end is provided with zigzag tread patterns part(4), zigzag tread patterns part(4)Upper end connects laterally driven part(3),
Described magnet steel part(2)Connect laterally driven part(3).
2. a kind of compound scan magnetic field according to claim 1 coating machine, is characterized in that:Described cathode cavity(1)Bottom
It is provided with target groove, target is installed in target groove(5).
3. a kind of compound scan magnetic field according to claim 1 coating machine, is characterized in that:Described magnet steel part(2)Magnetic force
Line can penetrate target(5).
4. a kind of compound scan magnetic field according to claim 1 coating machine, is characterized in that:Described laterally driven part(3)
With zigzag tread patterns part(4)It is provided with control panel, the reciprocating motion of execution magnet steel part.
5. a kind of compound scan magnetic field according to claim 1 coating machine, is characterized in that:Described cathode cavity(1)On set
There is cooling circulating water road(6).
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201620838274.2U CN205934011U (en) | 2016-08-05 | 2016-08-05 | Compound scanning magnetic field coating machine |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201620838274.2U CN205934011U (en) | 2016-08-05 | 2016-08-05 | Compound scanning magnetic field coating machine |
Publications (1)
Publication Number | Publication Date |
---|---|
CN205934011U true CN205934011U (en) | 2017-02-08 |
Family
ID=57924282
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201620838274.2U Active CN205934011U (en) | 2016-08-05 | 2016-08-05 | Compound scanning magnetic field coating machine |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN205934011U (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106086805A (en) * | 2016-08-05 | 2016-11-09 | 湖南玉丰真空科学技术有限公司 | A kind of compound scan magnetic field coater |
-
2016
- 2016-08-05 CN CN201620838274.2U patent/CN205934011U/en active Active
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106086805A (en) * | 2016-08-05 | 2016-11-09 | 湖南玉丰真空科学技术有限公司 | A kind of compound scan magnetic field coater |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN105543792B (en) | Magnetic control sputtering device and magnetically controlled sputter method | |
CN201598329U (en) | Twin-target magnetron sputtering device provided with gas ion sources | |
CN103436837B (en) | Improve rotary target material paint finishing | |
CN105568240B (en) | Magnetic control sputtering device and magnetically controlled sputter method | |
CN105714256A (en) | Method for low-temperature preparation of DLC film through magnetron sputtering | |
CN205934011U (en) | Compound scanning magnetic field coating machine | |
CN105200381B (en) | The auxiliary magnetic control sputtering film plating device of anodic field | |
CN101565813A (en) | MgO film electron beam evaporation method and device | |
CN102779711A (en) | Ion source with ultra-large ion beam divergence angle | |
CN110128022A (en) | A kind of large-scale curved glass evacuated Sputting film-plating apparatus | |
CN202643828U (en) | Magnetron sputtering cathode moving target | |
TWI403603B (en) | Magnetron sputtering apparatus | |
CN112030127A (en) | ta-C coating prepared by using enhanced glow discharge composite modulation strong current pulse arc and preparation method thereof | |
CN209144244U (en) | Electron beam coating system | |
CN103866241B (en) | A kind of ion auxiliary thermal evaporation combined magnetic-controlled sputter coating apparatus | |
CN108374150A (en) | A kind of vacuum coating equipment | |
CN103911592B (en) | A kind of magnetic control sputtering device and method | |
CN201620189U (en) | Target-pair magnetron sputtering device | |
CN106086805A (en) | A kind of compound scan magnetic field coater | |
CN205152320U (en) | Magnetron sputtering coating film device is assisted to anodic field | |
CN104451578A (en) | Direct current coupling type high energy pulse magnetron sputtering method | |
CN211497773U (en) | HiPIMS discharging target device regulated and controlled by pulsed magnetic field | |
CN103484826A (en) | Magnetron sputtering cathode movement target | |
CN208151473U (en) | A kind of adjustable magnetic control sputtering device in magnetic field | |
CN103924200A (en) | Thin film deposition apparatus |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
CB03 | Change of inventor or designer information |
Inventor after: Zhou Yi Inventor after: Liu Guoli Inventor after: Li Guoqiang Inventor before: Zhou Yi Inventor before: Li Guoqiang |
|
CB03 | Change of inventor or designer information |