CN205920980U - 太阳能板模块 - Google Patents
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- 238000000926 separation method Methods 0.000 claims abstract description 26
- 230000004888 barrier function Effects 0.000 claims description 54
- 239000000463 material Substances 0.000 claims description 22
- 238000010521 absorption reaction Methods 0.000 claims description 10
- 210000001364 upper extremity Anatomy 0.000 claims description 7
- 238000009413 insulation Methods 0.000 claims description 3
- 230000009286 beneficial effect Effects 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 10
- -1 po) Polymers 0.000 description 6
- 238000012856 packing Methods 0.000 description 5
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 4
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 4
- DQXBYHZEEUGOBF-UHFFFAOYSA-N but-3-enoic acid;ethene Chemical compound C=C.OC(=O)CC=C DQXBYHZEEUGOBF-UHFFFAOYSA-N 0.000 description 4
- 230000006866 deterioration Effects 0.000 description 4
- 239000008393 encapsulating agent Substances 0.000 description 4
- 239000005038 ethylene vinyl acetate Substances 0.000 description 4
- 239000003292 glue Substances 0.000 description 4
- 238000010030 laminating Methods 0.000 description 4
- 229920001200 poly(ethylene-vinyl acetate) Polymers 0.000 description 4
- 229920002037 poly(vinyl butyral) polymer Polymers 0.000 description 4
- 229920000098 polyolefin Polymers 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 230000035882 stress Effects 0.000 description 3
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 description 2
- 239000004952 Polyamide Substances 0.000 description 2
- 239000004698 Polyethylene Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 229920002647 polyamide Polymers 0.000 description 2
- 229920000573 polyethylene Polymers 0.000 description 2
- 229920000139 polyethylene terephthalate Polymers 0.000 description 2
- 239000005020 polyethylene terephthalate Substances 0.000 description 2
- 229920001296 polysiloxane Polymers 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229910052711 selenium Inorganic materials 0.000 description 2
- 239000011669 selenium Substances 0.000 description 2
- 239000000741 silica gel Substances 0.000 description 2
- 229910002027 silica gel Inorganic materials 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 230000008023 solidification Effects 0.000 description 2
- 238000007711 solidification Methods 0.000 description 2
- 230000008646 thermal stress Effects 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 206010016766 flatulence Diseases 0.000 description 1
- 239000008187 granular material Substances 0.000 description 1
- 239000000049 pigment Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000009738 saturating Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 1
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Abstract
一种太阳能板模块，其包括一盖板、一背板、至少二太阳能板以及至少一深色绝缘层。其中，该些太阳能板是夹置于该盖板以及该背板之间，且沿一方向间隔排列，其中二相邻的该些太阳能板之间具有一分隔间隙，且相距一距离，该深色绝缘层则是配置于该分隔间隙。本实用新型的有益效果是具有较佳的结构可靠度以及较长的使用寿命。
Description
技术领域
本实用新型是关于一种能源模块，特别是关于一种太阳能板模块。
背景技术
太阳能电池作为一种绿色能源已广泛的应用于人们的日常生活中。太阳能电池通常需要大量使用的太阳能板，常用的太阳能板的布置方式是将太阳能板排列于电池模块中，两相邻的太阳能板间再借由透明封装材来进行固连接固定的作业。然而，在太阳能电池中，由于太阳能板是为深色对象，所以容易吸热，因此太阳能电池在运作过程中，配置于两相邻的太阳能板间的透明封装材其吸热程度与太阳能板的吸热程度会有明显的差异。进一步地说，上述吸热程度的明显差异会导致太阳能电池中有局部热应力不均的现象，进而使其组装贴合关是劣化或剥离，影响其可靠度。
尤其是，现今太阳能板有一定的结构厚度，连带地，配置于两相邻的太阳能板间的透明封装材亦有较大的填充空间，因而具有较大的填充体积。因此，在热涨冷缩的状况下，具有较大填充体积的透明封装材与太阳能板间的热应力不均的现象更为明显，大幅地缩短太阳能电池的使用寿命。
发明内容
本实用新型之一目的是在提供一种太阳能板模块，其具有较佳的结构可靠度以及较长的使用寿命。
为达成上述的目的，本实用新型提供一种太阳能板模块，其包括一盖板、一背板、至少二太阳能板以及至少一深色绝缘层。其中，该些太阳能板是夹置于该盖板以及该背板之间，且沿一方向间隔排列，其中二相邻的该些太阳能板之间具有一分隔间隙，且相距一距离。该深色绝缘层则是配置于该分隔间隙。
根据本实用新型之一实施例，该深色绝缘层为一连续片状绝缘物，填充于该分隔间隙中。
根据本实用新型之一实施例，该太阳能板是包含硅(Si)、碲化镉(CdTe)、铜铟镓硒(CIGS)或其组合的薄膜型太阳能板。
根据本实用新型之一实施例，该深色绝缘层与该些太阳能板之一其边缘的至少一部分重叠。
根据本实用新型之一实施例，各该深色绝缘层是自该些太阳能板之一其边缘延伸到该分隔间隙，且于该分隔间隙的延伸距离是大于二分之一的该距离。
根据本实用新型之一实施例，各该深色绝缘层是混入深色绝缘物的透明封装材。
根据本实用新型之一实施例，该深色绝缘层是与对应的该太阳能板的上缘或是下缘之一重叠。
根据本实用新型之一实施例，更包含一填充于该分隔间隙的透明封装材，且该透明封装材，在为深色绝缘层区隔开的两边，具有大致相当的体积。
根据本实用新型之一实施例，该深色绝缘层的颜色与该太阳能板的吸热程度差异不大。
根据本实用新型之一实施例，该盖板与该背板为玻璃板材。
基于上述，本实用新型是在二相邻的该些太阳能板之间设置至少一一深色绝缘层，其中该深色绝缘层的颜色例如是与太阳能板的颜色实质上相同。如此一来，太阳能电池在运作过程中，配置于两相邻的太阳能板间的深色绝缘层其吸热程度即与太阳能板的吸热程度即无明显的差异，而不会导致太阳能电池中有局部热应力不均的现象。因此，本实用新型的太阳能板模块即有较佳的可靠度。连带地，亦有较长的使用寿命。
为让本实用新型的上述目的、特征和优点更能明显易懂，下文将以实施例并配合所附图式，作详细说明如下。需注意的是，所附图式中的各组件仅是示意，并未按照各组件的实际比例进行绘示。
附图说明
图1绘示本实用新型一较佳实施例的太阳能板模块的示意图。
图2绘示本实用新型另一较佳实施例的太阳能板模块的示意图。
图3绘示再本实用新型一较佳实施例的太阳能板模块的示意图。
图4绘示本实用新型又一较佳实施例的太阳能板模块的示意图。
图5绘示本实用新型又一较佳实施例的太阳能板模块的示意图。
具体实施方式
为能让本领域技术人员更了解本实用新型的技术内容，特举较佳具体实施例说明如下。
图1绘示本实用新型一较佳实施例的太阳能板模块的示意图。请参考图1，本实施例的太阳能板模块100包括一盖板110、一背板120、至少二太阳能板130以及至少一深色绝缘层140。其中，在本实施例中，盖板110与背板120例如为玻璃板材，其与太阳能板130间用透明封装材如例如热封装胶材(thermal encapsulant)如乙烯醋酸乙烯酯(EthyleneVinyl Acetate，EVA)、聚烯烃(polyolefin,PO)、聚乙烯醇缩丁醛(polyvinyl butyral,PVB)等、或UV固化胶材(UV curable encapsulant)、或硅胶(Silicone)，或上述者的组合彼此贴合。此外，太阳能板130的数量是以两个为例进行说明，这些太阳能板130例如是130A以及130B，太阳能板130A、130B是夹置于盖板110以及背板120之间，且沿一方向间隔排列，因此二相邻的这些太阳能板130A、130B之间会有一分隔间隙G，且二相邻的太阳能板130A、130B是相距一距离D。另外，深色绝缘层140则是配置于分隔间隙G中。深色绝缘层可以是内含深色的绝缘物例如混入色素的聚乙烯(Polyethylene,PE)、聚酰胺(Polyamide,PA)、聚对苯二甲酸乙二酯(Polyethylene terephthalate,PET)、或上述者之组合的粉体、颗粒、薄片等，混合于透明封装材例如热封装胶材(thermal encapsulant)如乙烯醋酸乙烯酯(Ethylene Vinyl Acetate，EVA)、聚烯烃(polyolefin,PO)、聚乙烯醇缩丁醛(polyvinylbutyral,PVB)等、或UV固化胶材(UV curable encapsulant)、或硅胶(Silicone)，或上述者的组合之间，并填充于分隔间隙G中。深色绝缘层亦可是 被置于分隔间隙G的封装层所包夹的连续片状绝缘物，由太阳能板130A右侧延伸到太阳能板130B左侧。值得一提的是，在本实施例中，基于太阳能板130A、130B的数量是以两个为例进行说明，因此位于二相邻的太阳能板130间的分隔间隙G仅以一个作说明。当然，本实用新型对此并不作任何限制。
承上所述，在本实施例中，太阳能板130A、130B可以是单多晶硅太阳能板。太阳能板130A、130B例如是包含硅(Si)、碲化镉(CdTe)、铜铟镓硒(CIGS)或其组合的薄膜型太阳能板。进一步地说，太阳能板130A、130B例如设有光电转换层(未绘示)以将太阳光的能量转换成电能。其中，光电转换层例如可包含由铜(Cu)、铟(In)、镓(Ga)与硒(Se)所构成的半导体材料，亦或是可包含由Ib族元素如铜(Cu)或银(Ag)、IIIb族元素如铝(Al)、镓(Ga)或铟(In)与VIb元素如硫(S)、硒(Se)或碲(Te)所构成的化合物半导体材料。
图2绘示本实用新型另一较佳实施例的太阳能板模块的示意图。请参考图2，本实施例的太阳能板模块200与图1所示的太阳能板模块100相似，惟二者的差异在于：在本实施例的太阳能板模块200中，配置于分隔间隙G中的深色绝缘层140与两相邻的太阳能板130A、130B的至少其中之一的边缘至少部分重叠。在本实施例中，深色绝缘层140是分别与两相邻的太阳能板130A、130B均有部分重叠。特别的是，深色绝缘层140的一端140E1例如是部分重叠于一太阳能板130A的上缘，而深色绝缘层140的另一端140E2例如是部分重叠于另一太阳能板130B的下缘。此外，为能让深色绝缘层140与两相邻的太阳能板130A、130B的至少其中之一的边缘至少部分重叠，深色绝缘层140的宽度W1例如是大于二相邻的太阳能板130间的距离D。
图3绘示再本实用新型一较佳实施例的太阳能板模块的示意图。请参考图3，本实施例的太阳能板模块300与图2所示的太阳能板模块200相似，惟二者的差异在于：在本实施例的太阳能板模块300中，二相邻的太阳能板130A、130B间的分隔间隙G是设置有二深色绝缘层140A、140B。其中，一深色绝缘层140B是与一太阳能板130B的上缘接触，而另一深色绝缘层140A是与另一太阳能板130A的下缘接触的，且这两个深色绝缘层140A、140B又彼此重叠。特别的是，在本实施例中，深色绝缘层140A、140B的宽度W2例如是大于二分之一的两太阳能板130A、130B间的距离D。换言之，各深色绝缘层140A、140B 是自所对应的太阳能板130A、130B之一其边缘延伸到分隔间隙G，且于分隔间隙G的延伸距离是大于二分之一的两太阳能板130A、130B间的距离D。如此一来，这两个深色绝缘层140A、140B即会在分隔间隙G内彼此重叠。
图4绘示本实用新型又一较佳实施例的太阳能板模块的示意图。请参考图4，本实施例的太阳能板模块400与图3所示的太阳能板模块300相似，惟二者的差异在于：在本实施例的太阳能板模块400中，每一深色绝缘层140A、140B是会与所对应的太阳能板130A、130B重叠。详细地说，深色绝缘层140A之一端会与太阳能板130A之一端的上缘至少部分重叠。同样地，深色绝缘层140B之一端会与太阳能板130B之一端的下缘至少部分重叠。此外，深色绝缘层140A、140B中未与太阳能板重叠之一端是又会相互重叠。
图5绘示本实用新型又一较佳实施例的太阳能板模块的示意图。请参考图5，本实施例的太阳能板模块500与图4所示的太阳能板模块400相似，惟二者的差异在于：在本实施例的太阳能板模块500中，每一深色绝缘层140A、140B是会分别配置太阳能板130A、130B的两侧。详细地说，深色绝缘层140A之一端会与太阳能板130A之一端的上缘至少部分重叠。深色绝缘层140A的另一端会与另一太阳能板130B之一端的上缘至少部分重叠。同样地，深色绝缘层140B之一端会与太阳能板130A之一端的下缘至少部分重叠，深色绝缘层140B的另一端会与另一太阳能板130B之一端的下缘至少部分重叠。其中，深色绝缘层140A、140B并未相互重叠。图2到图5深色绝缘层的配置方式，旨在令填充于分隔间隙G间的透明封装材，在为深色绝缘层区隔开的两边，具有大致相当的体积，如此其热膨胀的效应大致相同，以进一步增加其可靠度。
在一较佳实施例中，太阳能板模块亦可包含一填充于分隔间隙的透明封装材，该透明封装材是让深色绝缘层所区隔开的两边具有大致相当的体积。
值得一提的是，在本实用新型中，深色绝缘层140的颜色为黑色或是其他适当的深色。更进一步地说，本实用新型的深色绝缘层140的颜色是与太阳能板130的颜色实质上相同。凡是深色绝缘层140的颜色与太阳能板130的颜色实质上相同皆属本实用新型的精神与范畴，本文在此并不作任何限制。
综上所述，本实用新型是在二相邻的该些太阳能板之间设置至少一一深色绝缘层，其中该深色绝缘层的颜色例如是与太阳能板的颜色实质上相同。 如此一来，太阳能电池在运作过程中，配置于两相邻的太阳能板间的深色绝缘层其吸热程度即与太阳能板的吸热程度差异不大，而不会导致太阳能电池中因局部热应力不均造成结构劣化的现象。因此，本实用新型的太阳能板模块不会有公知技术的组装贴合关是劣化或剥离等不良情况发生。换言之，本创作会有较佳的结构连接关是以及可靠度。连带地，会有较长的使用寿命。
再者，即使现今太阳能板有一定的结构厚度，而连带导致两相邻太阳能板间的深色绝缘层有较大的填充空间，而具有较大的填充体积。基于本实用新型是于两相邻的太阳能板间配置深色绝缘层，且深色绝缘层的颜色与太阳能板的颜色实质上相同，故即使在明显的热胀冷缩的状况下，深色绝缘层其吸热程度与太阳能板的吸热程度上仍不会有明显的差异，而不会有公知技术的热应力不均的现象，连带地不会有组装贴合关是劣化或剥离等不良情况发生。换言之，本实用新型在太阳能板有一定的结构厚度，且环境在明显的热胀冷缩的状况下仍会有较佳的结构连接关是以及可靠度，可大幅地延长太阳能电池的使用寿命。
上述实施例仅是为了方便说明而举例，虽遭所属技术领域的技术人员任意进行修改，均不会脱离如权利要求书中所欲保护的范围。
Claims (8)
1.一种太阳能板模块，其特征在于，包括：
一盖板；
一背板；
至少二太阳能板，夹置于该盖板以及该背板之间，且沿一方向间隔排列，其中二相邻的该些太阳能板之间具有一分隔间隙，且相距一距离；以及
至少一深色绝缘层，配置于该分隔间隙。
2.如权利要求1所述的太阳能板模块，其特征在于，该深色绝缘层为一连续片状绝缘物，填充于该分隔间隙中。
3.如权利要求1所述的太阳能板模块，其特征在于，该深色绝缘层与该些太阳能板之一其边缘的至少一部分重叠。
4.如权利要求1所述的太阳能板模块，其特征在于，各该深色绝缘层是自该些太阳能板之一其边缘延伸到该分隔间隙，且于该分隔间隙的延伸距离是大于二分之一的该距离。
5.如权利要求1所述的太阳能板模块，其特征在于，该深色绝缘层内含深色绝缘物。
6.如权利要求1所述的太阳能板模块，其特征在于，该深色绝缘层是与对应的该太阳能板的上缘或是下缘之一重叠。
7.如权利要求1所述的太阳能板模块，其特征在于，含一填充于该分隔间隙的透明封装材，且该透明封装材，在为深色绝缘层区隔开的两边，具有大致相当的体积。
8.如权利要求1所述的太阳能板模块，其特征在于，该深色绝缘层的颜色与该太阳能板吸热程度差异不大。
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