CN205900552U - Microwave transistor of graphical bars structure - Google Patents
Microwave transistor of graphical bars structure Download PDFInfo
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- CN205900552U CN205900552U CN201620692250.0U CN201620692250U CN205900552U CN 205900552 U CN205900552 U CN 205900552U CN 201620692250 U CN201620692250 U CN 201620692250U CN 205900552 U CN205900552 U CN 205900552U
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- grid
- barrier layer
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Abstract
The utility model discloses a microwave transistor of graphical bars structure, this transistor has a graphical region at the barrier layer between source electrode and drain electrode, be provided with a plurality ofly by the surperficial recess along the recessed formation of thickness direction part of barrier layer in the graphical region, the grid covers to be located on the graphical region, and grid length is greater than the length of these a little recesses on grid length direction in order to cover these a little recesses completely, borrow the grid -control ability that strengthens the device that sets up by the recess on the one hand, restrain short channel effect, on the other hand grid below crude heterostructure obtained remaining, avoids two dimensional electron gas density to descend and arouse that electrically conductive ability reduces to the current output ability of device has been guaranteed when realizing suppressing short channel effect.
Description
Technical field
The utility model is related to semiconductor devices, the microwave transistor of more particularly to a kind of graphical grid structure.
Background technology
HEMT (hemt) includes substrate, cushion, channel layer, barrier layer and is arranged on barrier layer
Source electrode, the structure such as drain and gate, be the two-dimensional electron gas being existed using the heterojunction boundary between channel layer and barrier layer
Layer (2-2deg), passes through to change the electron concentration of grid pressurized control 2-deg, thus controlling work shape between source electrode and drain electrode
State.Hemt is the transistor of a new generation, because its excellent performance becomes high frequency, high pressure, high temperature and high-power applications aspect
First-selected.
At present, based on common hemt structure, it is long that the lifting of the frequency performance of microwave device depends on reduction grid, existing
Technology have been realized in the device of the long 30-50nm of grid.And the thickness of ordinary circumstance lower barrierlayer is in 20nm.Therefore,
Under this yardstick, it is faced with the huge challenge that device short channel effect is brought, this can limit the power output of device.In order to increase
The grid-control ability of strong device, suppression short-channel effect, one is using groove grid technique, will the barrier layer of area of grid integrally subtract
Thin, shorten grid to the distance of Two-dimensional electron gas channel, so that grid strengthens to the control ability of Two-dimensional electron gas channel.But
It is as the reduction of barrier layer thickness, in conducting channel, the density of two-dimensional electron gas, as well as reduction, limits the maximum of device
Power output.Another method is the structure design based on channel array, will the subregional barrier layer in grid lower section complete
Remove, and gate-all-around structure is formed by the side wall covering grid metal on the top of raceway groove and both sides, realize grid to conductive ditch
The Three dimensions control in road, thus enhance the modulation capability to raceway groove.But because grid section below conductive region is removed, remove
This subregion can not participate in conduction, reduce the conductive capability of device, thus affecting the power output of device.Also has one kind
Method is the design of epitaxial structure, and that is, one layer of side's growth is different from the back of the body barrier layer of barrier layer component under the channel, from raceway groove
The constraint effect to two-dimensional electron gas in raceway groove for the Fang Zengqiang, the short-channel effect of suppression device.But this proposes to epitaxy technique
Very high requirement, because different semiconductor crystalline material has different growth temperatures, the frequent switching of temperature can affect
The last quality of epitaxial material.Said method all cannot preferably solve the problems, such as.
Utility model content
The purpose of this utility model is to overcome the deficiency of prior art, provides a kind of microwave crystal of graphical grid structure
Pipe.
The utility model solves its technical problem and be the technical scheme is that a kind of microwave crystal of graphical grid structure
Pipe, includes substrate, cushion, channel layer and barrier layer from the bottom to top, barrier layer is provided with source electrode, drain electrode and grid, and grid
Pole is located between source electrode and drain electrode；Described barrier layer has a patterned area, described patterned sections between source electrode and drain electrode
Be provided with domain a plurality of by the potential barrier layer surface through-thickness partly recessed groove being formed；Described grid covers in described figure
On shape region, and grid length is recessed so that those are completely covered more than length on described grid length direction for those grooves
Groove.
Preferably, those grooves account for the 25%～75% of the patterned area area that described grid covers.
Preferably, those grooves are strip structures and equidistant intervals are arranged in parallel.
Preferably, described grid in described plurality of grooves bottom thickness with the thickness phase of described potential barrier layer surface
With.
Preferably, the side wall of described plurality of grooves slopes inwardly 0～60 degree from slot opening to bottom direction, described grid
Pole covers the side wall of described plurality of grooves.
Preferably, described channel layer and barrier layer are made up of the semi-conducting material that can form hetero-junctions；Described source electrode, drain electrode
And grid is made of metal and source electrode and drain electrode form Ohmic contact with barrier layer, grid forms Schottky contacts with barrier layer.
The beneficial effects of the utility model are:
1. the utility model arranges a patterned area between source electrode and drain electrode, in patterned area setting a plurality of by
The groove of potential barrier layer surface through-thickness partly recessed formation, grid is arranged in patterned area and grid length be more than recessed
So that those groove is completely covered, the on the one hand setting by groove strengthens the grid-control of device to length on grid length direction for the groove
Ability, suppresses short-channel effect；Below another aspect grid, original heterojunction structure is retained, it is to avoid the fall of conductive capability
The decline of low and two-dimensional electron gas density, thus ensure that the electric current output energy of device while realizing suppression short-channel effect
Power, improves the frequency performance of microwave device.
2. grid is covered on bottom and the side wall of groove, forms annular grid structure, by bottom and side wall to Two-dimensional electron
Gas channel realizes three-dimensional regulation and control, further enhancing modulation capability.
Brief description
Fig. 1 is the overlooking the structure diagram of the utility model one embodiment；
Fig. 2 is the barrier layer overlooking the structure diagram of the utility model one embodiment；
Fig. 3 is the schematic cross-section in a-a direction in Fig. 1；
Fig. 4 is the schematic cross-section in a '-a ' direction in Fig. 1
Fig. 5 is the section structural representation in b-b direction in Fig. 1.
Specific embodiment
Below in conjunction with drawings and Examples, the utility model is described in further detail.Each accompanying drawing of the present utility model is only
For illustrating to be easier to understand the utility model, its concrete ratio can be adjusted according to design requirement.Figure described in literary composition
The upper and lower relation of opposed member in shape, will be understood that the relative position referring to component in those skilled in the art for, therefore all
Can overturn and assume identical component, this all should belong to the scope disclosed by this specification together.Additionally, the element shown in figure and
The number of structure, all merely illustrative, with this, number is not limited, reality can be adjusted according to design requirement.
Referring to figs. 1 to Fig. 5, the microwave transistor of the graphical grid structure of an embodiment includes substrate 1, buffering from the bottom to top
Layer 2, channel layer 3 and barrier layer 4, barrier layer 4 is provided with source electrode 5, drain electrode 6 and grid 7, and grid 7 is located at source electrode 5 and drain electrode 6
Between.With source electrode to the span of drain directions grid as grid length, with grid along the span of source electrode and drain electrode bearing of trend it is
Grid width is it is generally recognized that grid length direction is vertical with grid width direction.Barrier layer 4 has between source electrode 5 and drain electrode 6
One patterned area l, is provided with patterned area l and a plurality of is formed by barrier layer 4 surface through-thickness is partly recessed
Groove 41.Grid 7 covers in patterned area l, and grid length is more than those groove 41 length on grid length direction
Degree is to be completely covered those grooves 41.In groove 41, the Distance Shortened of grid 7 and Two-dimensional electron gas channel, improve grid
Control ability to Two-dimensional electron gas channel；Outside groove, the barrier layer below grid is constant, the density of two-dimensional electron gas and
The conductive capability of barrier layer is kept, thus maintaining the power output of device.
In the present embodiment, those grooves 41 are strip structures, and opening is rectangle, and equidistant along grid width direction
Spaced and parallel arrangement, the gross area of those slot openings accounts for the 25%～50% of the patterned area area of grid 7 covering.Citing
For, between 20nm～40nm, width is same or like with the spacing of adjacent grooves, thus forming battle array for the length of each groove 41
Column is arranged, and grid length, between 30nm～50nm, has certain distance between both sides of the edge and groove both sides of the edge, thus
Achieve and be completely covered, groove 41 is completely within the modification scope of grid 7.If groove 41 can not be covered by grid 7 completely,
Then the partly caused 2-deg of the groove 41 outside grid 7 reduces to be regulated and controled by grid 7, and the electric current that this can affect device is close
Degree, thus affect the power output of device.Additionally, strip groove array can also be along the arrangement of grid length direction, or tiltedly
To arrangement, or multiple row other arrangement modes such as side by side.The setting of strip groove array, one side overall distribution is more uniform,
So that the relatively uniform distribution of electric current, it is to avoid the local current that non-uniform Distribution leads to is excessive, causes device local junction temperature mistake
Height, brings device reliability issues；On the one hand it is easy to process.Additionally, according to the actual requirements, groove can also be other rules or
Irregular shape, its arrangement can also be ordered into arrangement or unordered arrangement, is not limited thereto.
The side wall 411 of each groove 41 slopes inwardly 0 °～60 ° from slot opening to bottom 412 direction, and grid is covered in recessed
On the side wall 411 and bottom 412 of groove 41, realize to two-dimensional electron gas in vertical bottom direction and oblique sidewall direction simultaneously
The modulation of raceway groove, defines ring matrix effect.The side wall tilting increases the ability of regulation and control of device, and then improves the frequency of device
Performance.The thickness in bottom portion of groove 412 for the grid 7 is identical with the thickness in barrier layer 4 surface, and the setting due to sloped sidewall,
Its bending place is obtuse angle, it is to avoid sharp angle effect, and integral thickness tends to uniform, and assume surface corresponding with patterned area
Pattern, performance is homogeneous and stablizes.For example, the thickness of barrier layer is 20nm, and the depth of groove 41 is 10nm, grid
The thickness of pole is 500nm, can achieve and preferably acts synergistically.
Substrate and cushion are known material and structure, and such as substrate can be silicon, carborundum and sapphire etc..Buffering
Layer can be alxga1-xN, 0≤x≤1.Channel layer 3 and barrier layer 4 are that the semi-conducting material that can form hetero-junctions is formed, for example
Gan/algan, gaas/algaas etc..Source electrode 5 and drain electrode 6 are metal and form Ohmic contact and barrier layer 4 between, grid 7 is also
Simultaneously form Schottky contacts for metal and barrier layer 4 between.
Above-described embodiment is only used for further illustrating a kind of microwave transistor of graphical grid structure of the present utility model, but
The utility model is not limited to embodiment, every according to technical spirit of the present utility model above example is made any
Simple modification, equivalent variations and modification, each fall within the protection domain of technical solutions of the utility model.
Claims (6)
1. a kind of microwave transistor of graphical grid structure, described transistor include from the bottom to top substrate, cushion, channel layer and
Barrier layer, barrier layer is provided with source electrode, drain electrode and grid, and grid be located at source electrode and drain electrode between it is characterised in that: described
Barrier layer has a patterned area between source electrode and drain electrode, be provided with described patterned area a plurality of by barrier layer table
The groove of face through-thickness partly recessed formation；Described grid covers in described patterned area, and grid length is more than
Length on described grid length direction for those grooves is to be completely covered those grooves.
2. graphical grid structure according to claim 1 microwave transistor it is characterised in that: those grooves account for described grid
The 25%～75% of the patterned area area that pole covers.
3. graphical grid structure according to claim 1 microwave transistor it is characterised in that: those grooves be bar shaped knot
Structure and equidistant intervals are arranged in parallel.
4. graphical grid structure according to claim 1 microwave transistor it is characterised in that: described grid is in described multiple
The thickness of several bottom portion of groove is identical with the thickness of described potential barrier layer surface.
5. graphical grid structure according to claim 1 microwave transistor it is characterised in that: described plurality of grooves
Side wall slopes inwardly 0～60 degree from slot opening to bottom direction, and described grid covers the side wall of described plurality of grooves.
6. graphical grid structure according to claim 1 microwave transistor it is characterised in that: described channel layer and potential barrier
Layer is made up of the semi-conducting material that can form hetero-junctions；Described source electrode, drain electrode and grid be made of metal and source electrode and drain electrode with
Barrier layer forms Ohmic contact, and grid forms Schottky contacts with barrier layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620692250.0U CN205900552U (en) | 2016-07-04 | 2016-07-04 | Microwave transistor of graphical bars structure |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620692250.0U CN205900552U (en) | 2016-07-04 | 2016-07-04 | Microwave transistor of graphical bars structure |
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| CN205900552U true CN205900552U (en) | 2017-01-18 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106024880A (en) * | 2016-07-04 | 2016-10-12 | 厦门市三安集成电路有限公司 | Microwave transistor of patterned grid structure and manufacturing method thereof |
| WO2022193492A1 (en) * | 2021-03-15 | 2022-09-22 | 厦门市三安集成电路有限公司 | Hemt radio frequency device and manufacturing method therefor |
-
2016
- 2016-07-04 CN CN201620692250.0U patent/CN205900552U/en active Active
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106024880A (en) * | 2016-07-04 | 2016-10-12 | 厦门市三安集成电路有限公司 | Microwave transistor of patterned grid structure and manufacturing method thereof |
| WO2018006739A1 (en) * | 2016-07-04 | 2018-01-11 | 厦门市三安集成电路有限公司 | Microwave transistor of patterned gate structure, and preparation method therefor |
| US11088270B2 (en) | 2016-07-04 | 2021-08-10 | Xiamen Sanan Integrated Circuit Co., Ltd. . | Microwave transistor with a patterned gate structure and manufacturing method thereof |
| WO2022193492A1 (en) * | 2021-03-15 | 2022-09-22 | 厦门市三安集成电路有限公司 | Hemt radio frequency device and manufacturing method therefor |
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