CN205863355U - A kind of high-frequency microstrip substrate formula isolator - Google Patents
A kind of high-frequency microstrip substrate formula isolator Download PDFInfo
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- CN205863355U CN205863355U CN201620834107.0U CN201620834107U CN205863355U CN 205863355 U CN205863355 U CN 205863355U CN 201620834107 U CN201620834107 U CN 201620834107U CN 205863355 U CN205863355 U CN 205863355U
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- microstrip
- ferrospinel
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Abstract
The utility model discloses a kind of high-frequency microstrip substrate formula isolator, belong to technical field of micro communication, including base, ferrospinel substrate, resistive layer, circulator microstrip circuit, S-shaped microstrip line and permanent magnet, it is little, lightweight that this utility model has simple in construction, volume, applicable frequency is higher, is suitable for surface mount and the feature such as microcircuit is integrated.
Description
Technical field
This utility model relates to the signal isolator of a kind of technical field of micro communication, particularly relates to a kind of high-frequency microstrip base
Chip isolator.
Background technology
Microwave communication status in daily life, education production, military activity is extremely important, and following demand pair
The development of microwave electronics has promotion greatly, and smallerization, integrated theory are also to ferrite isolator therein
Industry produces impact, and traditional embedded isolator can not meet the demand of system paster the most substantially, is simultaneously embedded in formula isolation
The frequency range that device is suitable for is relatively low, it is impossible to meeting the demand of high-frequency range, it is micro-that microstrip substrate formula isolator is increasingly becoming high band
Small-sized main flow selects, and the operating frequency of the most relatively conventional microstrip substrate formula isolator is all at about 20-40GHz, it is impossible to
Meet the demand of higher frequency.
Utility model content
This utility model is for the deficiencies in the prior art, it is desirable to provide a kind of simple in construction, the surface mount and micro-of being applicable to
Circuit is integrated and meets the job requirement of higher frequency scope, the microstrip substrate formula isolation of predominantly 50-70GHz frequency band
Device, solves the higher frequency at 50-70GHz and carries out the technical barrier of microstrip substrate formula isolation, and reduce the body of isolator
Long-pending so that it is more antenna Transmit-Receive Unit can be placed on Connectors for Active Phased Array Radar a front.
For achieving the above object, this utility model is by the following technical solutions:
A kind of high-frequency microstrip substrate formula isolator, micro-including base, ferrospinel substrate, resistive layer, circulator
Band circuit, S-shaped microstrip line and permanent magnet, the saturation magnetic moment of described ferrospinel substrate is 5000Gs, and its upper surface is arranged
Having resistive layer and circulator microstrip circuit, a pin of described circulator microstrip circuit is connected with S-shaped microstrip line, and S-shaped is micro-
Band wire is arranged on resistive layer, and described circulator microstrip circuit is provided with permanent magnet, and described ferrospinel substrate is solid
It is scheduled on base, a length of the 8～10mm of described S-shaped microstrip line.
The thickness of described ferrospinel substrate is 0.15-0.2mm.
Described circulator microstrip circuit is electroplated at described ferrospinel substrate upper surface by photoetching technique.
Described resistive layer is arranged on described ferrospinel substrate by thin-film technique.
Described ferrospinel substrate is welded on base by scolding tin.
Described permanent magnet is glued on described circulator microstrip circuit by epoxy resin.
The thickness of described ferrospinel substrate is 0.15mm.
A kind of high-frequency microstrip substrate formula isolator described in the utility model, it is achieved that permanent magnet longitudinal magnetization spinelle ferrum
Oxysome substrate, uniformly, ground connection is good for the magnetization of ferrospinel substrate edge, and due to base and ferrospinel substrate
Thermal coefficient of expansion suitable, it is possible to welding time protection ferrospinel substrate, reduce and cause spinelle due to welding
The risk of ferrite substrate cracking, improves the reliability of product, and ferrospinel substrate upper surface of the present utility model is adopted
Taking polishing, utilize chemical method degreasing and foreign particle, surface is activated, removes absorption by physical method, protects
The adhesive force of card circuit film layer, high-frequency microstrip substrate formula isolator of the present utility model is applicable to surface mounting technology, and passes through
Gold wire bonding technology is connected with microwave circuit, and this utility model compared with prior art, uses the S-shaped of a length of 8～10mm
Microstrip line construction, can more effectively mate microwave circuit, improves isolation effect, and the size of S-shaped microstrip line construction is little, tool
There is the advantage placing more antenna Transmit-Receive Unit on a front of Connectors for Active Phased Array Radar.
Accompanying drawing explanation
Fig. 1 is structural representation of the present utility model；
Fig. 2 is the schematic diagram after this utility model assembles.
Wherein: 1, base, 2, resistive layer, 3, circulator microstrip circuit, 4, ferrospinel substrate, 5, permanent magnet,
6, S-shaped microstrip line.
Detailed description of the invention
A kind of high-frequency microstrip substrate formula isolator as shown in Figure 1-2, including base 1, ferrospinel substrate 4, electricity
Resistance film layer 2, circulator microstrip circuit 3, S-shaped microstrip line 6 and permanent magnet 5, the saturation magnetic moment of described ferrospinel substrate 4 is
5000Gs, its upper surface is provided with resistive layer 2 and circulator microstrip circuit 3, a pin of described circulator microstrip circuit 3
Being connected with S-shaped microstrip line 6, S-shaped microstrip line 6 is arranged on resistive layer 2, and described circulator microstrip circuit 3 is provided with permanent magnetism
Body 5, described ferrospinel substrate 4 is fixed on base 1, a length of the 8～10mm of described S-shaped microstrip line 6.
The thickness of described ferrospinel substrate 4 is 0.15-0.2mm.
Described circulator microstrip circuit 3 is electroplated at described ferrospinel substrate 4 upper surface by photoetching technique.
Described resistive layer 2 is arranged on described ferrospinel substrate 4 by thin-film technique.
Described ferrospinel substrate 4 is welded on base 1 by scolding tin.
Described permanent magnet 5 is glued on described circulator microstrip circuit 3 by epoxy resin.
The thickness of described ferrospinel substrate 4 is 0.15mm.
During work, described saturation magnetic moment is that ferrospinel substrate 4 Curie temperature of 5000Gs is high, temperature stability
Good, the thickness of the most thinning substrate can isolator at higher frequency operated within range；This utility model uses a length of 8～10mm
S-shaped microstrip line 6 decay microwave signal, circulator microstrip circuit 3 can well be mated so that it is be applicable to 50-70GHz's
Higher frequency.
The high-frequency microstrip substrate formula isolator being applicable to 50-70GHz described in the utility model, it is adaptable to surface mount skill
Art, and be connected with microwave circuit by gold wire bonding technology.
The key technical indexes of the present utility model is as follows:
Frequency range: 50-70GHz
Forward loss :≤1.2dB
Reverse isolation: >=18dB
Standing-wave ratio :≤1.6
Temperature range :-30 DEG C～+70 DEG C
Joint form: W → W
Overall dimensions: 5.5 × 2 × 3.5mm
A kind of high-frequency microstrip substrate formula isolator described in the utility model, it is achieved that permanent magnet longitudinal magnetization spinelle ferrum
Oxysome substrate, uniformly, ground connection is good for the magnetization of ferrospinel substrate edge, and due to base and ferrospinel substrate
Thermal coefficient of expansion suitable, it is possible to welding time protection ferrospinel substrate, reduce and cause spinelle due to welding
The risk of ferrite substrate cracking, improves the reliability of product, and ferrospinel substrate upper surface of the present utility model is adopted
Taking polishing, utilize chemical method degreasing and foreign particle, surface is activated, removes absorption by physical method, protects
The adhesive force of card circuit film layer, high-frequency microstrip substrate formula isolator of the present utility model is applicable to surface mounting technology, and passes through
Gold wire bonding technology is connected with microwave circuit, and this utility model compared with prior art, uses the S-shaped of a length of 8～10mm
Microstrip line construction, can more effectively mate microwave circuit, improves isolation effect, and the size of S-shaped microstrip line construction is little, tool
There is the advantage placing more antenna Transmit-Receive Unit on a front of Connectors for Active Phased Array Radar.
Although as it has been described above, represented and described this utility model with reference to specific preferred embodiment, but it must not
It is construed to the restriction to this utility model self.In the spirit and scope of the present utility model defined without departing from claims
Under premise, can various changes can be made in the form and details to it.
Claims (7)
1. a high-frequency microstrip substrate formula isolator, it is characterised in that: include base (1), ferrospinel substrate (4), electricity
Resistance film layer (2), circulator microstrip circuit (3), S-shaped microstrip line (6) and permanent magnet (5), described ferrospinel substrate (4)
Saturation magnetic moment is 5000Gs, and its upper surface is provided with resistive layer (2) and circulator microstrip circuit (3), described circulator micro-strip
One pin of circuit (3) is connected with S-shaped microstrip line (6), and S-shaped microstrip line (6) is arranged on resistive layer (2), described belt
Being provided with permanent magnet (5) on device microstrip circuit (3), described ferrospinel substrate (4) is fixed on base (1), described S-shaped
A length of the 8～10mm of microstrip line (6).
A kind of high-frequency microstrip substrate formula isolator the most according to claim 1, it is characterised in that: described ferrospinel
The thickness of substrate (4) is 0.15-0.2mm.
A kind of high-frequency microstrip substrate formula isolator the most according to claim 1 and 2, it is characterised in that: described circulator is micro-
Band circuit (3) is electroplated at described ferrospinel substrate (4) upper surface by photoetching technique.
A kind of high-frequency microstrip substrate formula isolator the most according to claim 1 and 2, it is characterised in that: described resistive layer
(2) it is arranged on described ferrospinel substrate (4) by thin-film technique.
A kind of high-frequency microstrip substrate formula isolator the most according to claim 1 and 2, it is characterised in that: described spinelle ferrum
Oxysome substrate (4) is welded on base (1) by scolding tin.
A kind of high-frequency microstrip substrate formula isolator the most according to claim 1 and 2, it is characterised in that: described permanent magnet (5)
It is glued on described circulator microstrip circuit (3) by epoxy resin.
A kind of high-frequency microstrip substrate formula isolator the most according to claim 2, it is characterised in that: described ferrospinel
The thickness of substrate (4) is 0.15mm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620834107.0U CN205863355U (en) | 2016-08-03 | 2016-08-03 | A kind of high-frequency microstrip substrate formula isolator |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620834107.0U CN205863355U (en) | 2016-08-03 | 2016-08-03 | A kind of high-frequency microstrip substrate formula isolator |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN205863355U true CN205863355U (en) | 2017-01-04 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201620834107.0U Active CN205863355U (en) | 2016-08-03 | 2016-08-03 | A kind of high-frequency microstrip substrate formula isolator |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN205863355U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107516754A (en) * | 2017-04-28 | 2017-12-26 | 成都致力微波科技有限公司 | Binary channels microstrip circulator component |
-
2016
- 2016-08-03 CN CN201620834107.0U patent/CN205863355U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107516754A (en) * | 2017-04-28 | 2017-12-26 | 成都致力微波科技有限公司 | Binary channels microstrip circulator component |
| CN107516754B (en) * | 2017-04-28 | 2023-05-09 | 成都致力微波科技有限公司 | Dual-channel microstrip circulator component |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CP01 | Change in the name or title of a patent holder | ||
| CP01 | Change in the name or title of a patent holder |
Address after: 211132, No. three, No. seven, Tangshan industrial concentration area, Tangshan District, Jiangsu, Nanjing, Jiangning Patentee after: Nanjing Guangshun Electronic Technology Research Institute Co., Ltd. Address before: 211132, No. three, No. seven, Tangshan industrial concentration area, Tangshan District, Jiangsu, Nanjing, Jiangning Patentee before: NANJING GUANGSHUN ELECTRONIC TECHNOLOGY Research Institute |