CN205863190U - A kind of solar module of anti-PID effect - Google Patents
A kind of solar module of anti-PID effect Download PDFInfo
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- CN205863190U CN205863190U CN201620817355.4U CN201620817355U CN205863190U CN 205863190 U CN205863190 U CN 205863190U CN 201620817355 U CN201620817355 U CN 201620817355U CN 205863190 U CN205863190 U CN 205863190U
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- transparent conductive
- conductive film
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/52—PV systems with concentrators
Abstract
The utility model discloses the solar module of a kind of anti-PID effect, including the backsheet layer stacked the most successively, the first encapsulating material layer, at least one cell piece the battery lamella being in series, the second encapsulating material layer and glassy layer, wherein, described cell piece includes layer-of-substrate silicon, it is formed at the emitter layer on layer-of-substrate silicon surface and is formed at the antireflection film layer on described emitter layer, between described antireflection film layer and described second encapsulating material layer, being provided with transparent conductive film layer.The solar module of this anti-PID effect, by arranging transparent conductive film layer, the Electric Field Distribution between glassy layer and battery lamella can be readjusted, such that it is able to block the surface that sodium ion moves to the emitter layer of battery lamella under the electric field from glassy layer, it is thus possible to effectively eliminate the induction decay of solaode electromotive force.
Description
Technical field
This utility model relates to technical field of solar cell manufacturing, particularly relates to the solar-electricity of a kind of anti-PID effect
Pond assembly.
Background technology
Along with the fast development of photovoltaic industry, solar module is installed in harsh environment more and more,
As on hot and humid, salt-soda soil, pool or lake surface, Coastal beach etc., thus caused a kind of new component failures pattern
Electroluminescent relaxation phenomenon (Potential Induced Degradation, PID).As it is shown in figure 1, the solar battery group of routine
Backsheet layer the 1, first encapsulating material layer 2 that part includes stacking the most successively, battery lamella the 3, second encapsulating material layer 4, glass
Glass layer 5, wherein, battery lamella 3 include layer-of-substrate silicon 31, layer-of-substrate silicon 31 diffusion into the surface formed emitter layer 32, with
And the antireflection film layer 33 of the silicon nitride of the formation of deposits on the surface of emitter layer 32.In actual applications, solaode
Frame and the support of assembly need ground connection, when the component voltage 6 of solar components is high negative voltage relative to the earth, and glassy layer
Spread under the electric field that emitter layer 32 at glassy layer 5 and battery lamella 3 is formed by the sodium ion in 5, and by the second encapsulation
Material layer 4 and antireflection film layer 33 become impurity in being progressively diffused into emitter layer 32, the serious conversion reducing solaode
Efficiency.
In prior art, the traditional method reducing PID mainly includes both direction, and one is the density improving silicon nitride, from
And reduce the migration rate in silicon nitride of sodium ion, delay the generation of PID effect, and when the density of silicon nitride is the highest, right
The absorption of solar energy is the highest, thus reduces the conversion efficiency of solaode；Two be silicon nitride and emitter layer it
Between grow the silicon dioxide layer of densification, sodium ion migration rate can be reduced equally, delay the purpose of PID effect, but effect
Inconspicuous, it is impossible to accomplish to be completely eliminated.
Utility model content
The purpose of this utility model is to propose the solar module of a kind of anti-PID effect, it is possible to effectively eliminate too
Sun can cell voltage potential induction decay.
For reaching this purpose, this utility model by the following technical solutions:
The solar module of a kind of anti-PID effect, including the backsheet layer stacked the most successively, the first encapsulation material
The bed of material, at least one cell piece the battery lamella being in series, the second encapsulating material layer and glassy layer, wherein, described battery
Sheet includes layer-of-substrate silicon, is formed at the emitter layer on layer-of-substrate silicon surface and is formed at the antireflective coating on described emitter layer
Layer, is provided with transparent conductive film layer between described antireflection film layer and described second encapsulating material layer.
Preferred as one, described cell piece also includes the grid line layer being arranged at the surface of described antireflection film layer, described
Transparent conductive film layer is arranged between described grid line layer and described antireflection film layer.
Preferred as another kind, described cell piece also includes the grid line layer being arranged at the surface of described antireflection film layer, institute
State transparent conductive film layer to be arranged between described grid line layer and described second encapsulating material layer.
Preferred as one, described transparent conductive film layer is the thin layer of whole formation of deposits.
Preferred as another kind, described transparent conductive film layer is the thin layer of part formation of deposits.
Preferably, the thickness of described transparent conductive film layer is 1nm～100nm.
It is further preferred that the thickness of described transparent conductive film layer is 1nm～10nm.
Wherein, described transparent conductive film layer is tin dope three Indium sesquioxide. or the thin layer of aluminium-doped zinc oxide material.
Wherein, described first encapsulating material layer and described second encapsulating material layer are the material layer of EVA material.
Wherein, described antireflection film layer is silicon nitride film layer.
The beneficial effects of the utility model are:
The solar module of anti-PID effect of the present utility model, by arranging transparent conductive film layer, it is possible to again
Adjust the Electric Field Distribution between glassy layer and battery lamella, such that it is able to block sodium ion to move to electricity from glassy layer under the electric field
The surface of the emitter layer of pond lamella, it is thus possible to effectively eliminate the induction decay of solaode electromotive force.
Accompanying drawing explanation
Fig. 1 is the structural representation of solar module of the prior art.
Fig. 2 is the structural representation of solar module of the present utility model.
Fig. 3 is the processing process schematic diagram of cell piece of the prior art.
Fig. 4 is the processing process schematic diagram of the cell piece of solar module of the present utility model.
Fig. 5 is the processing process schematic diagram of solar module of the prior art.
Fig. 6 is the processing process schematic diagram of solar module of the present utility model.
Fig. 7 is the cell piece of the present utility model structural representation after deposition transparent conductive film layer.
In figure: 1-backsheet layer；2-the first encapsulating material layer；3-battery lamella；4-the second encapsulating material layer；5-glassy layer；
6-component voltage；7-transparent conductive film layer；8-main gate line；9-pair grid line；10-breakpoint；
31-layer-of-substrate silicon；32-emitter layer；33-antireflection film layer.
Detailed description of the invention
Further illustrate the technical solution of the utility model below in conjunction with the accompanying drawings and by detailed description of the invention.
Embodiment one
As in figure 2 it is shown, the solar module of a kind of anti-PID effect of the present utility model, including the most successively
Backsheet layer the 1, first encapsulating material layer 2 stacked, the battery lamella 3, second being in series by least one cell piece encapsulate material
The bed of material 4 and glassy layer 5, wherein, described cell piece includes layer-of-substrate silicon 31, be formed at layer-of-substrate silicon surface emitter layer 32 and
Be formed at the antireflection film layer 33 on described emitter layer 32, described antireflection film layer 33 and described second encapsulating material layer 4 it
Between be provided with transparent conductive film layer 7.
It is by arranging transparent conductive film layer 7, it is possible to the electric field readjusted between glassy layer 5 and battery lamella 3 divides
Cloth, such that it is able to block the surface that sodium ion moves to the emitter layer of battery lamella 3 under the electric field from glassy layer 5, thus energy
Enough solaode electromotive forces that effectively eliminates induce decay.
Specifically, described first encapsulating material layer 2 and described second encapsulating material layer 4 are the material layer of EVA material, institute
State antireflection film layer 33 for silicon nitride film layer.
Preferably, the thickness of described transparent conductive film layer 7 is 1nm～100nm.Transparent lead it is further preferred that described
The thickness of thin film layer 7 is 1nm～10nm.Further preferred, the thickness of described transparent conductive film layer 7 be 1nm,
1.5nm、2nm、2.5nm、3nm、3.5nm、4nm、4.5nm、5nm、5.5nm、6nm、6.5nm、7nm、7.5nm、8nm、8.5nm、
9nm、10nm.In the present embodiment, the thickness of described transparent conductive film layer 7 is 5nm.
Preferably, described transparent conductive film layer 7 is the thin layer of tin dope three Indium sesquioxide. or aluminium-doped zinc oxide material.
Embodiment two
Being with embodiment one difference, in the present embodiment, described cell piece also includes being arranged at described antireflective
The grid line layer on the surface of film layer 33, if described grid line layer includes many secondary grid lines 9 being parallel to each other and perpendicular with secondary grid line 9
Dry root main gate line 8, described transparent conductive film layer 7 is arranged between described grid line layer and described antireflection film layer 33.Wherein, institute
State the thin layer that transparent conductive film layer 7 is whole formation of deposits.
Embodiment three
Being with embodiment one difference, in the present embodiment, described cell piece also includes being arranged at described antireflective
The grid line layer on the surface of film layer 33, if described grid line layer includes many secondary grid lines 9 being parallel to each other and perpendicular with secondary grid line 9
Dry root main gate line 8, described transparent conductive film layer 7 is arranged between described grid line layer and described antireflection film layer 33.Wherein, institute
State the thin layer that transparent conductive film layer 7 is part formation of deposits.
Embodiment four
Being with embodiment one difference, in the present embodiment, described cell piece also includes being arranged at described antireflective
The grid line layer on the surface of film layer 33, described transparent conductive film layer 7 is arranged at described grid line layer and described second encapsulating material layer 4
Between.Wherein, described transparent conductive film layer 7 is the thin layer of whole formation of deposits.
Embodiment five
Being with embodiment one difference, in the present embodiment, described cell piece also includes being arranged at described antireflective
The grid line layer on the surface of film layer 33, described transparent conductive film layer 7 is arranged at described grid line layer and described second encapsulating material layer 4
Between.Wherein, described transparent conductive film layer 7 is the thin layer of part formation of deposits.
On the basis of the above, by a kind of specific embodiment, transparent conductive film layer is further illustrated
Effect and effect.
The thickness assuming glassy layer 5 is 3.2mm, and the thickness of the first encapsulating material layer 2 and the second encapsulating material layer 4 is
0.3mm, the thickness of antireflection film layer 33 is 0.08mm, and system voltage is-1000V, calculates and understands, and average field intensity is about
279330V/m.And after adding transparent conductive film layer, the electric field intensity in transparent conductive film layer close to zero, sodium
The migration rate of ion is also close to zero, thus has fundamentally contained the generation of PID effect.
It addition, in this utility model, the production method of described transparent conductive film layer 7, can there be two kinds, the most such as
Under:
If described transparent conductive film layer 7 is arranged between described grid line layer and described antireflection film layer 33, the most transparent lead
Thin film layer 7, in the cell piece production process of solaode, makes after antireflection film layer 33 deposition；Specifically, such as Fig. 3
Shown in, the processing process of existing cell piece is: making herbs into wool-diffusion-cleaning-depositing antireflection film layer-silk screen printing-burning
Knot；If making transparent conductive film layer 7, then, as shown in Figure 4, the processing work of its cell piece after antireflection film layer 33 deposits
Process flow is: making herbs into wool-diffusion-cleaning-depositing antireflection film layer-deposition transparent conductive film layer (namely TCO deposition)-screen printing
Brush-sintering.It increases by one transparent conductive film layer depositing operation after the antireflection film layer of silicon nitride material deposits, and this is saturating
Bright conductive membrane layer can be whole deposition, it is also possible to for part deposition.If transparent conductive film layer is whole deposition, at silk
In net typography, as it is shown in fig. 7, in the case of secondary grid line 9 has breakpoint 10, transparent conductive film layer (TCO) can provide
Extra conductive path, the series resistance of solaode also will greatly decline simultaneously so that battery efficiency is significantly carried
High.Certainly transparent conductive film layer can also be part deposition, as long as adding a template can realize main gate line 8 or secondary grid line
9 or local location on both do not deposit transparent conductive film layer, processing and fabricating easily operates.
If described transparent conductive film layer 7 is arranged between described grid line layer and described second encapsulating material layer 4, specifically
Ground, as it is shown in figure 5, the fabrication processing of existing solar module is: welding-stacking-be laminated-frame up-test；This
Time, transparent conductive film layer 7 can be carried out before second encapsulating material layer 4 stacking in solar module manufacturing process,
Then, as shown in Figure 6, the fabrication processing of its solar module is: welding-deposition transparent conductive film layer (namely TCO
Deposition)-stacking-be laminated-frame up-test, wherein, welding is that by welding welding, cell piece is formed battery lamella, in welding
The surface deposition transparent conductive film layer of battery lamella afterwards or the surface of battery lamella after being welded are directly placed
Previously prepared transparent conductive film layer, the most again stacking the second encapsulating material layer and glassy layer, realize pressure by lamination afterwards
Close, then frame up, last test.
As can be seen here, aforesaid way can increase layer of transparent conduction between the second encapsulating material layer 4 and cell piece 3
Thin layer, when component system voltage-to-ground is negative high voltage, original electric field will redistribute, inside transparent conductive film layer
Electric field close to zero, thus thoroughly blocked sodium ion migration under strong electric field, eliminated the generation of PID effect, transparent
Conductive membrane layer is set directly on battery lamella can also reduce series resistance, improves fill factor, curve factor.
Know-why of the present utility model is described above in association with specific embodiment.These descriptions are intended merely to explain this reality
By novel principle, and the restriction to this utility model protection domain can not be construed to by any way.Based on explanation herein,
Those skilled in the art need not pay performing creative labour can associate other detailed description of the invention of the present utility model,
Within these modes fall within protection domain of the present utility model.
Claims (10)
1. a solar module for anti-PID effect, including the backsheet layer (1) stacked the most successively, the first encapsulation
Material layer (2), at least one cell piece the battery lamella (3) being in series, the second encapsulating material layer (4) and glassy layer (5),
Wherein, described cell piece includes layer-of-substrate silicon (31), is formed at the emitter layer (32) on layer-of-substrate silicon surface and is formed at described
Antireflection film layer (33) on emitter layer (32), it is characterised in that described antireflection film layer (33) and described second encapsulation material
Transparent conductive film layer (7) it is provided with between the bed of material (4).
Solar module the most according to claim 1, it is characterised in that described cell piece also includes being arranged at described
The grid line layer on the surface of antireflection film layer (33), described transparent conductive film layer (7) is arranged at described grid line layer and described anti-reflection
Penetrate between film layer (33).
Solar module the most according to claim 1, it is characterised in that described cell piece also includes being arranged at described
The grid line layer on the surface of antireflection film layer (33), described transparent conductive film layer (7) is arranged at described grid line layer and described second
Between encapsulating material layer (4).
4. according to the solar module described in any one of claims 1 to 3, it is characterised in that described transparent conductive film
Layer (7) is the thin layer of whole formation of deposits.
5. according to the solar module described in any one of claims 1 to 3, it is characterised in that described transparent conductive film
Layer (7) is the thin layer of part formation of deposits.
6. according to the solar module described in any one of claims 1 to 3, it is characterised in that described transparent conductive film
The thickness of layer (7) is 1nm～100nm.
Solar module the most according to claim 6, it is characterised in that the thickness of described transparent conductive film layer (7)
Degree is 1nm～10nm.
8. according to the solar module described in any one of claims 1 to 3, it is characterised in that described transparent conductive film
Layer (7) is tin dope three Indium sesquioxide. or the thin layer of aluminium-doped zinc oxide material.
9. according to the solar module described in any one of claims 1 to 3, it is characterised in that described first encapsulating material
Layer (2) and described second encapsulating material layer (4) are the material layer of EVA material.
10. according to the solar module described in any one of claims 1 to 3, it is characterised in that described antireflection film layer
(33) it is silicon nitride film layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620817355.4U CN205863190U (en) | 2016-07-29 | 2016-07-29 | A kind of solar module of anti-PID effect |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620817355.4U CN205863190U (en) | 2016-07-29 | 2016-07-29 | A kind of solar module of anti-PID effect |
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| CN205863190U true CN205863190U (en) | 2017-01-04 |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108802496A (en) * | 2018-06-11 | 2018-11-13 | 泰州隆基乐叶光伏科技有限公司 | A kind of test method of photovoltaic module glued membrane volume resistivity |
| CN109962121A (en) * | 2019-04-24 | 2019-07-02 | 黄石金能光伏有限公司 | A kind of heat resistanceheat resistant spot flexibility crystal silicon component and preparation method |
| CN111446923A (en) * | 2020-04-09 | 2020-07-24 | 杭州晶宝新能源科技有限公司 | Method and system for rapidly testing potential induction attenuation of solar cell |
| CN113793875A (en) * | 2021-09-13 | 2021-12-14 | 西安隆基绿能建筑科技有限公司 | Photovoltaic packaging plate, manufacturing method thereof and photovoltaic module |
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2016
- 2016-07-29 CN CN201620817355.4U patent/CN205863190U/en active Active
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108802496A (en) * | 2018-06-11 | 2018-11-13 | 泰州隆基乐叶光伏科技有限公司 | A kind of test method of photovoltaic module glued membrane volume resistivity |
| CN109962121A (en) * | 2019-04-24 | 2019-07-02 | 黄石金能光伏有限公司 | A kind of heat resistanceheat resistant spot flexibility crystal silicon component and preparation method |
| CN111446923A (en) * | 2020-04-09 | 2020-07-24 | 杭州晶宝新能源科技有限公司 | Method and system for rapidly testing potential induction attenuation of solar cell |
| CN111446923B (en) * | 2020-04-09 | 2021-09-21 | 杭州晶宝新能源科技有限公司 | Method and system for rapidly testing potential induction attenuation of solar cell |
| CN113793875A (en) * | 2021-09-13 | 2021-12-14 | 西安隆基绿能建筑科技有限公司 | Photovoltaic packaging plate, manufacturing method thereof and photovoltaic module |
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