CN205863156U - A kind of wafer grinding load plate and upper slice machine - Google Patents
A kind of wafer grinding load plate and upper slice machine Download PDFInfo
- Publication number
- CN205863156U CN205863156U CN201620693249.XU CN201620693249U CN205863156U CN 205863156 U CN205863156 U CN 205863156U CN 201620693249 U CN201620693249 U CN 201620693249U CN 205863156 U CN205863156 U CN 205863156U
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- groove
- wafer
- load plate
- vacuum hole
- wafer grinding
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- 238000000034 method Methods 0.000 claims abstract description 13
- 230000007246 mechanism Effects 0.000 claims description 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 3
- 229910001037 White iron Inorganic materials 0.000 claims description 3
- 238000003491 array Methods 0.000 claims description 3
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 3
- 229910000831 Steel Inorganic materials 0.000 claims description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 2
- 239000010959 steel Substances 0.000 claims description 2
- 239000007787 solid Substances 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 abstract description 4
- 238000012840 feeding operation Methods 0.000 abstract 1
- 239000000919 ceramic Substances 0.000 description 4
- 230000002093 peripheral effect Effects 0.000 description 4
- 239000000758 substrate Substances 0.000 description 3
- 238000005299 abrasion Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 238000010025 steaming Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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- Mechanical Treatment Of Semiconductor (AREA)
Abstract
A kind of wafer grinding load plate and upper slice machine, for adsorbing fixed wafer, wherein load plate has relative first surface and second surface, there is on described first surface the first groove of a plurality of bearing wafer, there is on described second surface second groove corresponding with described first groove location, in described second groove, one-way cock is set, described first bottom portion of groove has a plurality of connection the first groove and the first vacuum hole of the second groove, and the distance at described first vacuum hole and the first bottom portion of groove center is less than the radius of wafer.This load plate is by vac sorb mode fixed wafer, and the degree of depth passing through the first groove limits the thickness of wafer grinding, thus simplifies production procedure, improves wafer yield.It addition, include that the upper slice machine of this load plate achieves the automatic sheet-feeding operation of wafer.
Description
Technical field
This utility model belongs to equipment for making semiconductor device field, particularly relates to use without using bonding wax to fix
The wafer grinding load plate of vacuum mode fixed wafer and include its upper slice machine.
Background technology
The processing procedure of LED wafer is: uses epitaxial growth method grown epitaxial layer on a substrate, then uses photoetching, steaming
The techniques such as plating make figure layer and electrode structure, finally LED wafer employing stroke are split technology and are separated into multiple crystal grain, make for follow-up
With.Owing to substrate is thicker, LED wafer is drawn split time, substrate need to be carried out reduction processing by techniques such as grinding, polishings.And
Before abrasive polishing process, melted bonding wax need to be used to secure the wafer on the ceramic disk that surface is smooth after cooling, for
Follow-up grinding, polishing etc., and product thickness need to be reached by thickness measuring device processing.
Prior art generally uses bonding wax fixed wafer on ceramic disk, completes thickness thinning post-heating ceramic disk, treats
Carry out lower wax operation after bonding wax is melted, then through going wax liquid matting to be cleaned up by the bonding wax of front wafer surface, use viscous
The mode of wax deposition fixed wafer considerably increases the manufacturing cost of wafer.Additionally, after ceramic disk fixed wafer, need to artificially select journey
It is thinning that sequence completes thickness by grinding, firmly throwing board measuring equipment, has and artificially selects mistake program, board measurement mistake to cause wafer
Thickness abnormity risk, causes wafer chip yield loss.
Summary of the invention
For solving problem above, this utility model provides a kind of chip carrying disk without using bonding wax fixed wafer,
Concrete technical scheme is as follows:
A kind of wafer grinding load plate, has relative first surface and second surface, it is characterised in that: described first table
There is on face the first groove of a plurality of bearing wafer, described second surface has corresponding with described first groove location
Two grooves, arrange one-way cock in described second groove, described first bottom portion of groove has a plurality of connection the first groove and
First vacuum hole of two grooves, the distance at described first vacuum hole and the first bottom portion of groove center is less than the radius of wafer.
Preferably, the degree of depth of described first groove is equal to described wafer thickness after thinning.
Preferably, the bottom of described first groove has the first groove in concentric arrays, described first vacuum hole position
In the bottom centre and the first groove of the first groove.
Preferably, the bottom of described first groove also have with described first grooves and be arranged radially second
Groove, described first vacuum hole is positioned at the bottom centre of described first groove and the first groove and the point of intersection of the second groove.
Preferably, described load plate surface configuration has wearing layer.
Preferably, described wearing layer is wear-resisting steel layer, white cast-iron layer, layers of chrome or silicon carbide layer.
Preferably, the size of described first groove is more than the size of the second groove.
In order to realize the function to above-mentioned load plate automatic sheet-feeding, this utility model additionally provides one upper slice machine, at least
Including processing platform, it is positioned at the pumped vacuum systems that the Shang Pian mechanism above described processing platform is connected with described processing platform, its
It is characterised by: described upper slice machine also includes that above-mentioned load plate, described load plate are placed on processing platform, and described pumped vacuum systems passes through institute
State processing platform and described load plate is carried out evacuation process, wafer is fixed on described load plate.
Preferably, described processing platform has the projection that a plurality of and described one-way cock is corresponding, tool in described projection
The second through vacuum hole, described second vacuum hole is had to be connected with pumped vacuum systems.
Preferably, described projection is positioned at described one-way cock, described pumped vacuum systems successively by described second vacuum hole,
Air in second groove, the first vacuum hole detaches, and is fixed on by wafer in described first groove.
The beneficial effects of the utility model:
1) this utility model changes the mode of traditional bonding wax fixed wafer, and uses vacuum mode to be fixed by wafer
In the first groove of load plate, thus eliminate wax, the complex process of lower wax, simplify flow process, reduce the production of wafer
Cost；
2) this utility model is at the chip carrying disk surface configuration degree of depth first groove consistent with thinning rear wafer thickness, thus
The thickness after wafer grinding is accurately controlled by the degree of depth of the first groove；For preventing from load plate is caused thinning damage, also at load plate
Surface configuration wearing layer；On the one hand eliminate the step that subsequent wafer is measured, simplify flow process, on the other hand, recessed by first
The degree of depth of groove limits the thickness thinning of wafer, thus decreases the exception that wafer grinding is blocked up or the thinnest, improves wafer yield.
Accompanying drawing explanation
The accompanying drawing of the part constituting the application is used for providing being further appreciated by of the present utility model, of the present utility model
Schematic description and description is used for explaining this utility model, is not intended that improper restriction of the present utility model.At accompanying drawing
In:
Fig. 1 is the load plate top view of this utility model.
AA ' sectional view when Fig. 2 is Fig. 1 and wafer is the most thinning.
Fig. 3 is the AA ' sectional view after Fig. 1 and wafer grinding.
Fig. 4 is sheet machine structural representation on this utility model.
Accompanying drawing marks: 100. load plates；110. wafer；120. first grooves；121. first vacuum holes；1211. center first
Vacuum hole；1212. peripheral first vacuum holes；122. first grooves；123. second grooves；130. second grooves；131. check valve
Door；200. upper slice machines；210. processing platform；211. it is protruding；212. second vacuum holes；220. Shang Pian mechanisms；230. evacuation systems
System.
Detailed description of the invention
Embodiment 1
Referring to attached Fig. 1 and 2, a kind of wafer grinding load plate 100 that this utility model provides, there is relative first surface
And second surface, wherein, first surface has the first groove 120 of a plurality of bearing wafer 110, second surface has with
The second groove 130 that first groove 120 position is corresponding.There is bottom first groove 120 a plurality of connection the first groove 120 and
First vacuum hole 121 of two grooves 130, the distance of the first vacuum hole 121 and the first groove 120 bottom centre is less than wafer 110
Radius, to ensure the vacuum environment in the first vacuum hole 121.During first vacuum hole 121 includes being positioned at bottom the first groove 120
Center first vacuum hole 1211 of the heart and be positioned at periphery the first vacuum hole 1212 about.Size due to the second groove 130
Less than the first groove 120, it is set to by second with first vacuum hole 121 that connects of the second groove 130 for realizing the first groove 120
The meander-like that groove 130 extends to both sides.In second groove 130, one-way cock 131 is set, recessed when wafer 110 is placed in first
Time in groove 120, pumped vacuum systems (not shown) is inserted in one-way cock 131, is detached by the air of the first vacuum hole 121,
Wafer 110 just adsorbs and is fixed in the first groove 120, when pumped vacuum systems being removed, due to the only permission gas of one-way cock 131
The characteristic of body one-way flow, one-way cock 131 is closed and is kept the vaccum of the first vacuum hole 121, thus realizes wafer 110
It is fixed on load plate 100 by vacuum mode.
With continued reference to accompanying drawing 1, the bottom of the first groove 120 has the first groove 122 in concentric arrays, the first vacuum
Hole 121 is positioned on bottom centre and first groove 122 of the first groove 120, and specifically, center the first vacuum hole 1211 is positioned at
The bottom centre of one groove 120, peripheral first vacuum hole 1212 is positioned on the first groove 122.Further, also have and first
The second groove 123 that groove 122 intersects and is arranged radially, the first vacuum hole 121 is positioned in the bottom of the first groove 120
At the heart and the first groove 122 and point of intersection of the second groove 123, specifically, it is recessed that center the first vacuum hole 1211 is positioned at first
The bottom centre of groove 120, peripheral first vacuum hole 1212 is positioned at the first groove 122 and intersection point of the second groove 123.The present embodiment
In be preferably provided with equally distributed 122,4 the second symmetrical grooves 123 of 4 the first grooves, and 1 center first is true
Emptying aperture 1211 and 4 symmetrical periphery the first vacuum holes 1212, to strengthen the adsorption to wafer 110.Peripheral first
The distance of the bottom centre of vacuum hole 1212 and the first groove 120 is less than the radius of wafer 110, so that prevent cannot because of vacuum breaker
Absorption wafer 110.This utility model changes the mode of traditional bonding wax fixed wafer 110, and uses vacuum mode by crystalline substance
Sheet 110 is fixed in the first groove 120 of load plate 100, thus eliminate wax, the complex process of lower wax, simplify flow process, fall
The low production cost of wafer 110
Referring to accompanying drawing 2 and accompanying drawing 3, this utility model arranges the depth H of the first groove 120 and is equal to wafer 110 after thinning
Thickness.Referring to accompanying drawing 2, before wafer 110 thinning operation starts, the thickness T of wafer 110 is more than the depth H of the first groove 120；
Referring to accompanying drawing 3, after thinning, the thickness of wafer 110 is equal to the depth H of the first groove 120.Use the depth H of the first groove 120
Thickness after accurately control wafer 110 is thinning.During in order to prevent thinning operation, by load plate 100 surface abrasion, load plate 100 surface
Arranging wearing layer, and use attrition resistant materials coating, attrition resistant materials includes abrasion-resistant stee, white cast-iron, chromium or carborundum etc..This practicality
Novel the first groove 120 in chip carrying disk 100 surface configuration depth H Yu thinning rear wafer 110 consistency of thickness, and for preventing
Load plate 100 is caused thinning damage, also at load plate 100 surface configuration wearing layer, thus accurate by the degree of depth of the first groove 120
Thickness after control wafer 110 is thinning, on the one hand eliminates the step that subsequent wafer 110 is measured, simplifies flow process, the opposing party
Face, is limited the thickness thinning of wafer 110, thus it is thinning blocked up or the thinnest to decrease wafer 110 by the degree of depth of the first groove 120
Exception, improve wafer 110 yield.
Referring to accompanying drawing 4, operating to realize the automatic sheet-feeding of above-mentioned load plate 100, this utility model additionally provides in one
Sheet machine 200, it includes load plate 100, processing platform 210, Shang Pian mechanism 220 and pumped vacuum systems 230.Wherein, processing platform
210 have a plurality of projection 211 corresponding with one-way cock 131, have the second true of through processing platform 210 in protruding 211
Emptying aperture 212, the second vacuum hole 212 is connected with pumped vacuum systems 230.Time specifically used, load plate 100 is placed on processing platform 210,
Protruding 211 insert in one-way cock 131, and pumped vacuum systems 230 is by the second vacuum hole the 212, second groove 130 and the first vacuum
Air in hole 121 detaches, thus is fixed on by the way of vac sorb by wafer 110 in first groove 120.
It should be appreciated that above-mentioned specific embodiments is preferred embodiment of the present utility model, model of the present utility model
Enclosing and be not limited to this embodiment, all any changes done according to this utility model, within all belonging to protection domain of the present utility model.
Claims (10)
1. a wafer grinding load plate, is used for adsorbing fixed wafer, has relative first surface and second surface, its feature
It is: there is on described first surface the first groove of a plurality of bearing wafer, described second surface has and described first
The second groove that groove location is corresponding, arranges one-way cock in described second groove, described first bottom portion of groove has a plurality of
Connecting the first vacuum hole of the first groove and the second groove, the distance at described first vacuum hole and the first bottom portion of groove center is less than
The radius of wafer.
A kind of wafer grinding load plate the most according to claim 1, it is characterised in that: the degree of depth of described first groove is equal to
Described wafer thickness after thinning.
A kind of wafer grinding load plate the most according to claim 1, it is characterised in that: the bottom of described first groove has
The first groove in concentric arrays, described first vacuum hole is positioned on bottom centre and first groove of the first groove.
A kind of wafer grinding load plate the most according to claim 3, it is characterised in that: the bottom of described first groove also has
Having and described first grooves and the second groove of being arranged radially, described first vacuum hole is positioned at described first groove
Bottom centre and the first groove and the point of intersection of the second groove.
A kind of wafer grinding load plate the most according to claim 1, it is characterised in that: described load plate surface configuration has wear-resisting
Layer.
A kind of wafer grinding load plate the most according to claim 5, it is characterised in that: described wearing layer be wear-resisting steel layer,
White cast-iron layer, layers of chrome or silicon carbide layer.
A kind of wafer grinding load plate the most according to claim 1, it is characterised in that: the size of described first groove is more than
The size of the second groove.
8. upper slice machine, at least includes processing platform, is positioned at the Shang Pian mechanism above described processing platform and described processing is put down
The pumped vacuum systems that platform connects, it is characterised in that: described upper slice machine also includes the load plate described in claim 1 ~ 7, described load plate
Being placed on processing platform, described pumped vacuum systems carries out evacuation process by described processing platform to described load plate, by wafer
It is fixed on described load plate.
One upper slice machine the most according to claim 8, it is characterised in that: have a plurality of and described on described processing platform
The projection that one-way cock is corresponding, has the second through vacuum hole, described second vacuum hole and pumped vacuum systems in described projection
Connect.
One upper slice machine the most according to claim 9, it is characterised in that: described projection is positioned at described one-way cock, institute
State pumped vacuum systems to be detached by the air in described second vacuum hole, the second groove and the first vacuum hole successively, wafer is solid
In described first groove.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620693249.XU CN205863156U (en) | 2016-07-05 | 2016-07-05 | A kind of wafer grinding load plate and upper slice machine |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620693249.XU CN205863156U (en) | 2016-07-05 | 2016-07-05 | A kind of wafer grinding load plate and upper slice machine |
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| Publication Number | Publication Date |
|---|---|
| CN205863156U true CN205863156U (en) | 2017-01-04 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201620693249.XU Active CN205863156U (en) | 2016-07-05 | 2016-07-05 | A kind of wafer grinding load plate and upper slice machine |
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| Country | Link |
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| CN (1) | CN205863156U (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110692142A (en) * | 2017-06-01 | 2020-01-14 | 康宁股份有限公司 | Assembly substrate including through-hole and method of manufacturing the same |
| WO2020034649A1 (en) * | 2018-08-17 | 2020-02-20 | 福建晶安光电有限公司 | Piezoelectric wafer and manufacturing method therefor |
| CN113211306A (en) * | 2021-05-28 | 2021-08-06 | 福建晶安光电有限公司 | Ceramic carrier disc for polishing semiconductor wafer |
-
2016
- 2016-07-05 CN CN201620693249.XU patent/CN205863156U/en active Active
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110692142A (en) * | 2017-06-01 | 2020-01-14 | 康宁股份有限公司 | Assembly substrate including through-hole and method of manufacturing the same |
| WO2020034649A1 (en) * | 2018-08-17 | 2020-02-20 | 福建晶安光电有限公司 | Piezoelectric wafer and manufacturing method therefor |
| CN113211306A (en) * | 2021-05-28 | 2021-08-06 | 福建晶安光电有限公司 | Ceramic carrier disc for polishing semiconductor wafer |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |