CN205803590U - A kind of guide frame structure of HF CVD depositing system - Google Patents
A kind of guide frame structure of HF CVD depositing system Download PDFInfo
- Publication number
- CN205803590U CN205803590U CN201620591954.9U CN201620591954U CN205803590U CN 205803590 U CN205803590 U CN 205803590U CN 201620591954 U CN201620591954 U CN 201620591954U CN 205803590 U CN205803590 U CN 205803590U
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- China
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- fixing
- tantalum wire
- wire bar
- guide frame
- tantalum
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Abstract
A kind of guide frame structure of HF CVD depositing system, relate to a kind of guide frame structure, including fixing tantalum wire bar A(1), bracing frame (2), tantalum wire (3), fixing tantalum wire bar B(5) and guide frame fix bar (4), parallel interval arrange two vertical supporting framves (2) between be respectively arranged at two ends with fixing tantalum wire bar A(1) and fixing tantalum wire bar B(5), at fixing tantalum wire bar B(5) outside be provided with extension spring fixation kit (7), one end of many tantalum wires (3) is distributed on fixing tantalum wire bar A(1) on, the other end of many tantalum wires (3) is each passed through fixing tantalum wire bar B(5) many piece high temperature resistant extension springs (6) arranging upper with extension spring fixation kit (7) are fixing afterwards is connected；This utility model by by heated filament set up be set to vertically-mounted by the way of, it is achieved that heated filament is the most sagging, the uniform purpose in chip bench temperature field.
Description
[technical field]
This utility model relates to a kind of guide frame structure, specifically this utility model and relates to a kind of HF CVD depositing system
Guide frame structure.
[background technology]
At present, the technology of preparing of diamond thin mainly include microwave plasma CVD, direct current etc. from
Daughter injection chemical gaseous phase deposition, hot-wire chemical gas-phase deposition etc.；Relative to other two kinds of technology, heat wire method can prepare big face
Long-pending diamond thin, and integrated cost is minimum；The design of heated filament frame is that HF CVD depositing system prepares diamond membrane with large area
Core content；Existing heated filament shelf structure mainly uses horizontal structure, when heated filament is heated rapidly, thus produces expansion, long
Degree increases therewith, and tantalum wire can be sagging, causes chip bench temperature field uneven, and the diamond of deposition is the most uneven.
[summary of the invention]
In order to overcome the deficiency in background technology, the utility model discloses the guide frame knot of a kind of HF CVD depositing system
Structure, by by heated filament set up be set to vertically-mounted by the way of, it is achieved that heated filament is the most sagging, the uniform purpose in chip bench temperature field.
For achieving the above object, this utility model adopts the following technical scheme that
The guide frame structure of a kind of HF CVD depositing system, including fixing tantalum wire bar A, bracing frame, tantalum wire, fixing tantalum wire bar
B and guide frame fix bar, being respectively arranged at two ends with fixing tantalum wire bar A and consolidating between two vertical supporting framves that parallel interval is arranged
Determining tantalum wire bar B, be provided with extension spring fixation kit in the outside of fixing tantalum wire bar B, one end of many tantalum wires is distributed on fixing tantalum wire bar A
On, the other end of many tantalum wires be each passed through after fixing tantalum wire bar B with many high temperature resistant extension springs arranging on extension spring fixation kit
Fixing connection.
The guide frame structure of described HF CVD depositing system, described extension spring fixation kit is set to U-shaped frame, described U-shaped
The two side of frame is separately fixed on the two sides of fixing tantalum wire bar B, one end of many high temperature resistant extension springs respectively with the horizontal stroke of U-shaped frame
Plate is fixing to be connected.
The guide frame structure of described HF CVD depositing system, is provided with electrode fixing holes in the end of fixing tantalum wire bar B.
The guide frame structure of described HF CVD depositing system, the length of described many tantalum wires, diameter are the most identical.
The guide frame structure of described HF CVD depositing system, described tantalum wire is identical with the quantity of high temperature resistant extension spring.
Owing to have employed technique scheme, this utility model has a following superiority:
The guide frame structure of HF CVD depositing system described in the utility model, by being vertically arranged tantalum wire 3, tantalum wire 3 is subject to
Effect to gravity, it is to avoid the drawback that traditional horizontal structure is sagging after causing tantalum wire temperature distortion, this utility model due to
Tantalum wire is the most sagging, and chip bench temperature field is uniform, therefore, it is possible to obtain the good diamond film of uniformity.
[accompanying drawing explanation]
Fig. 1 is structural representation of the present utility model；
In the drawings: 1, fixing tantalum wire bar A；2, bracing frame；3, tantalum wire；4, guide frame fixes bar；5, fixing tantalum wire bar B；6, resistance to
High temperature extension spring；7, extension spring fixation kit；8, electrode fixing holes.
[detailed description of the invention]
Can be explained in more detail this utility model by the following examples, this utility model is not limited to following
Embodiment；
In conjunction with the guide frame structure of the HF CVD depositing system described in accompanying drawing 1, including fixing tantalum wire bar A1, bracing frame 2, tantalum
Silk 3, fixing tantalum wire bar B5 and guide frame fix bar 4, and the two ends between two vertical supporting framves 2 that parallel interval is arranged set respectively
There is fixing tantalum wire bar A1 and fixing tantalum wire bar B5, be provided with extension spring fixation kit 7, many tantalum wires 3 in the outside of fixing tantalum wire bar B5
One end be distributed on fixing tantalum wire bar A1, the other end of many tantalum wires 3 is fixed with extension spring after being each passed through fixing tantalum wire bar B5
The many high temperature resistant fixing connections of extension springs 6 arranged on assembly 7.
The guide frame structure of described HF CVD depositing system, described extension spring fixation kit 7 is set to U-shaped frame, described U-shaped
The two side of frame is separately fixed on the two sides of fixing tantalum wire bar B5, one end of many high temperature resistant extension springs 6 respectively with U-shaped frame
Transverse slat is fixing to be connected.
The guide frame structure of described HF CVD depositing system, is provided with electrode fixing holes 8 in the end of fixing tantalum wire bar B5.
The guide frame structure of described HF CVD depositing system, the length of described many tantalum wires 3, diameter are the most identical.
The guide frame structure of described HF CVD depositing system, described tantalum wire 3 is identical with the quantity of high temperature resistant extension spring 6.
Implement the guide frame structure of HF CVD depositing system described in the utility model, in use, first tantalum wire is fixed
Bar A1, bracing frame 2, guide frame fix bar 4, fixing tantalum wire bar 5 is fixed by connections such as electrode fixing holes 8, are then led to by tantalum wire 3
Crossing high temperature resistant extension spring 6 and extension spring fixation kit 7 fixes, guide frame of dismantling after fixing fixes bar 4, fixes bar A1 and tantalum to tantalum wire
The fixing bar B5 of silk leads to positive electricity and negative electricity respectively, it is achieved tantalum wire heats, and this utility model is the most sagging due to tantalum wire, and chip bench temperature field is equal
Even, therefore, it is possible to obtain the good diamond film of uniformity.
The non-detailed portion of this utility model is prior art.
The embodiment selected in this article to disclose goal of the invention of the present utility model, it is suitable to be presently considered to be,
However, it should be understood that, this utility model is intended to include that all belong to the institute of the embodiment in the range of this design and utility model
Change and improve.
Claims (5)
1. a guide frame structure for HF CVD depositing system, including fixing tantalum wire bar A(1), bracing frame (2), tantalum wire (3), solid
Determine tantalum wire bar B(5) and guide frame fix bar (4), it is characterized in that: parallel interval arrange two vertical supporting framves (2) between
Be respectively arranged at two ends with fixing tantalum wire bar A(1) and fixing tantalum wire bar B(5), at fixing tantalum wire bar B(5) outside be provided with extension spring and fix
Assembly (7), one end of many tantalum wires (3) is distributed on fixing tantalum wire bar A(1) on, the other end of many tantalum wires (3) is each passed through solid
Determine tantalum wire bar B(5) many piece high temperature resistant extension springs (6) arranging upper with extension spring fixation kit (7) are fixing afterwards is connected.
The guide frame structure of HF CVD depositing system the most according to claim 1, is characterized in that: described extension spring fixation kit
(7) being set to U-shaped frame, the two side of described U-shaped frame is separately fixed at fixing tantalum wire bar B(5) two sides on, many are high temperature resistant
One end of extension spring (6) is fixing with the transverse slat of U-shaped frame respectively to be connected.
The guide frame structure of HF CVD depositing system the most according to claim 1, is characterized in that: at fixing tantalum wire bar B(5)
End be provided with electrode fixing holes (8).
The guide frame structure of HF CVD depositing system the most according to claim 1, is characterized in that: described many tantalum wires (3)
Length, diameter the most identical.
The guide frame structure of HF CVD depositing system the most according to claim 1, is characterized in that: described tantalum wire (3) is with resistance to
The quantity of high temperature extension spring (6) is identical.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620591954.9U CN205803590U (en) | 2016-06-17 | 2016-06-17 | A kind of guide frame structure of HF CVD depositing system |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620591954.9U CN205803590U (en) | 2016-06-17 | 2016-06-17 | A kind of guide frame structure of HF CVD depositing system |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN205803590U true CN205803590U (en) | 2016-12-14 |
Family
ID=58142599
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201620591954.9U Expired - Fee Related CN205803590U (en) | 2016-06-17 | 2016-06-17 | A kind of guide frame structure of HF CVD depositing system |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN205803590U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106884155A (en) * | 2017-03-03 | 2017-06-23 | 深圳先进技术研究院 | Heated filament carrier and deposition of diamond thin films equipment |
-
2016
- 2016-06-17 CN CN201620591954.9U patent/CN205803590U/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106884155A (en) * | 2017-03-03 | 2017-06-23 | 深圳先进技术研究院 | Heated filament carrier and deposition of diamond thin films equipment |
| CN106884155B (en) * | 2017-03-03 | 2019-11-05 | 深圳先进技术研究院 | Heated filament carrier and deposition of diamond thin films equipment |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20161214 Termination date: 20170617 |