CN205789921U - A kind of miniaturization air-tightness is without lead-in wire ceramic packaging structure - Google Patents

A kind of miniaturization air-tightness is without lead-in wire ceramic packaging structure Download PDF

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Publication number
CN205789921U
CN205789921U CN201620717091.5U CN201620717091U CN205789921U CN 205789921 U CN205789921 U CN 205789921U CN 201620717091 U CN201620717091 U CN 201620717091U CN 205789921 U CN205789921 U CN 205789921U
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China
Prior art keywords
layer
ceramic
ceramic layer
bonding
wire
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn - After Issue
Application number
CN201620717091.5U
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Chinese (zh)
Inventor
周平
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CHENGDU CORPRO TECHNOLOGY Co Ltd
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CHENGDU CORPRO TECHNOLOGY Co Ltd
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Priority to CN201620717091.5U priority Critical patent/CN205789921U/en
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Publication of CN205789921U publication Critical patent/CN205789921U/en
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554External layer
    • H01L2224/0555Shape
    • H01L2224/05552Shape in top view
    • H01L2224/05554Shape in top view being square
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491Disposition
    • H01L2224/4912Layout
    • H01L2224/49171Fan-out arrangements

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  • Wire Bonding (AREA)

Abstract

The utility model discloses miniaturization air-tightness without lead-in wire ceramic packaging structure, including ceramic package (1), bonding die glue (2), silicon chip (3), bonding wire (4) and cover plate (5);Ceramic package (1) includes ceramic layer (11) and metal layer (12), described ceramic layer (11) is cavity body structure, silicon chip (3) is arranged on the Nian Xin district bottom described cavity body structure by bonding die glue (2), ceramic layer (11) includes ceramic layer (112) and lower ceramic layer (111), metal layer (12) includes seal mouth ring (125) and pad layer (121), seal mouth ring (125), upper ceramic layer (112), lower ceramic layer (111) and pad layer (121) set gradually from top to bottom, cover plate (5) is arranged on the top of seal mouth ring (125), the sidewall of lower ceramic layer (111) is provided with semicircle orifice (1110), bonding wire (4) is used for connecting silicon chip (3) and metal layer (12).This utility model is less than the profile of existing air-tightness non-leaded package.

Description

A kind of miniaturization air-tightness is without lead-in wire ceramic packaging structure
Technical field
This utility model relates to integrated circuit ceramic packaging technology field, particularly relates to a kind of miniaturization air-tightness without drawing Line ceramic packaging structure.
Background technology
In integrated antenna package technical field, ceramic package is better than at aspects such as mechanical property, moisture vapour transmission and hot propertys Plastic Package.But for opposed plastic encapsulation, because of the reason of ceramic packaging structure, ceramic package is often than Plastic Package Greatly.In certain applications scene, the Plastic Package of high reliability can be used to may be used without ceramic package, become for reducing production This, generally require Plastic Package pad compatible with ceramic package pad, thus shares a set of pcb board.Small-sized encapsulated main Being represented as QFN, corresponding ceramic package is CLCC encapsulation.
For realizing miniaturization, we often optimize the width W2 of seal mouth ring, but need to ensure the air-tightness of device, cover plate and sealing The overlapping widths of ring is not less than 0.35mm;And need to there be a solder trickling district at seal mouth ring edge, its width W3 is about the thickness of cover plate, General cover sheet thickness is 0.25mm, then w3 is 0.25mm;Optimize the length that bonding refers to, for ensureing the feasibility of binding, it is desirable to Fit key is closed and is referred to that the distance from seal mouth ring refers to length W1 with being bonded, and such chopper could bind gold thread reliably.
As it is shown in figure 1, the practice of existing ground connection is: install a fin at ceramic floor, fin is embedded in lower pottery In.During ground connection, ground signalling is directly bound on heat sink.So require that silicon chip edge to distance L of Nian Xin district inwall is 1.1-1.5mm。
Conventional air-tight packaging is: uses ceramic package and uses gold-tin alloy (Au80Sn20) that cover plate is arranged on pottery Cover top portion.It is applicable to highly reliable pottery envelope application, such as military field, vehicle electric field.
Utility model content
The purpose of this utility model is to overcome the deficiencies in the prior art, it is provided that a kind of miniaturization air-tightness is without lead-in wire pottery Encapsulating structure, compared with existing air-tightness non-leaded package, its profile is less, overcoming pottery envelope greatly and asking with the compatibility of plastic packaging Topic.
The purpose of this utility model is achieved through the following technical solutions: a kind of miniaturization air-tightness is without lead-in wire pottery Encapsulating structure, including ceramic package, bonding die glue, silicon chip, bonding wire and cover plate;Described ceramic package includes ceramic layer and metallization Layer, described ceramic layer is cavity body structure, and silicon chip is arranged on the Nian Xin district bottom described cavity body structure, described pottery by bonding die glue Layer includes ceramic layer and lower ceramic layer, and described metal layer includes seal mouth ring and pad layer, described seal mouth ring, upper ceramic layer, Lower ceramic layer and pad layer set gradually from top to bottom, and cover plate is arranged on the top of seal mouth ring, and the sidewall of lower ceramic layer is provided with half Circular hole, bonding wire is used for connecting silicon chip and metal layer.
Described lower ceramic layer includes the first ceramic layer, the second ceramic layer and the 3rd ceramic layer set gradually from the bottom up.
The top view of described upper ceramic layer and lower ceramic layer is rectangular-shaped, and the length and width of lower ceramic layer are less than the length of upper pottery Wide.
Described upper ceramic layer bottom design has chamfering structure.
Described metal layer also includes that bonding refers to that layer and metallic vias, bonding refer to that layer includes ground connection bonding to refer to signal and is bonded Refer to.
Described ground connection bonding refers to be connected with silicon chip by bonding wire.
Described pad layer includes that ground pad and signal pad, described ground connection bonding refer to by metallic vias and ground pad Connecting, described signal bonding refers to be connected with signal pad by semicircle orifice.
The beneficial effects of the utility model are:
(1) compared with conventional air-tightness non-leaded package, profile of the present utility model is less, and overall dimensions can reduce 3mm Left and right, greatly improves the compatibling problem of pottery envelope and plastic packaging, for the QFN encapsulation that pin pitch (pith) is 0.5mm, minimum Can realize QFN24, profile 4 × 4mm's is completely compatible;
(2) this utility model is in the case of profile is the least, has excellent plate electrode and installs advantage, and semicircle orifice can improve plate Pole installation reliability.
Accompanying drawing explanation
Fig. 1 is existing ceramic packaging structure axonometric drawing;
Fig. 2 is this utility model miniaturization air-tightness schematic diagram without the ceramic packaging structure that goes between;
Fig. 3 is the schematic diagram of pad layer;
Fig. 4 is the sectional view of pad layer in Fig. 3;
In figure, 1-ceramic package, 2-bonding die glue, 3-silicon chip, 4-bonding wire, 5-cover plate, 11-ceramic layer, pottery under 111- Layer, 1110-semicircle orifice, 1111-the first ceramic layer, 1112-the second ceramic layer, 1113-the 3rd ceramic layer, the upper ceramic layer of 112-, 1120-chamfering structure, 12-metal layer, 120-metallic vias, 121-pad layer, 1211-signal pad, 1212-ground connection is welded Dish, 122-the first metal layer, 123-the second metal level, 124-bonding refers to that layer, 1241-signal bonding refer to, 1242-ground connection is bonded Refer to, 125-seal mouth ring.
Detailed description of the invention
The technical solution of the utility model is described in further detail below in conjunction with the accompanying drawings, but protection domain of the present utility model It is not limited to the following stated.
As shown in Figure 2, Figure 3 and Figure 4, a kind of miniaturization air-tightness without lead-in wire ceramic packaging structure, including ceramic package 1, Bonding die glue 2, silicon chip 3, bonding wire 4 and cover plate 5;Described ceramic package 1 includes ceramic layer 11 and metal layer 12, described ceramic layer 11 is cavity body structure, and silicon chip 3 is arranged on the Nian Xin district bottom described cavity body structure by bonding die glue 2.
Described ceramic layer 11 includes ceramic layer 112 and lower ceramic layer 111, and described lower ceramic layer 111 is tied for multi-layer ceramics Structure, lower ceramic layer 111 includes the first ceramic layer the 1111, second ceramic layer 1112 and the 3rd ceramic layer set gradually from the bottom up 1113。
Described metal layer 12 include pad layer 121, the first metal layer the 122, second metal level 123, bonding refer to layer 124, Seal mouth ring 125 and metallic vias 120, described bonding refer to layer 124 include ground connection bonding refer to 1242 and signal bonding refer to 1241.
Described seal mouth ring 125, upper ceramic layer 112, lower ceramic layer 111 and pad layer 121 set gradually from top to bottom, cover plate 5 tops being arranged on seal mouth ring 125, the sidewall of lower ceramic layer 111 is provided with semicircle orifice (half-moon groove castellation) 1110, bonding wire 4 are used for connecting silicon chip 3 and metal layer 12.
The top view of described upper ceramic layer 112 and lower ceramic layer 111 is rectangular-shaped, and the length and width of lower ceramic layer 111 are less than The length and width of upper pottery.
Described upper ceramic layer 112 bottom design has chamfering structure 1120.
Described ground connection bonding refers to that 1242 bondings refer to that layer 124 is connected with silicon chip 3 by bonding wire 4.
Described the first metal layer is between the first ceramic layer and the second ceramic layer, and the second metal level is positioned at the second ceramic layer With the 3rd between ceramic layer.
Described pad layer 121 includes that ground pad 1212 pad layer 121 and signal pad 1211, described ground connection bonding refer to 1242 are connected with ground pad 1212 by metallic vias 120, and described signal bonding refers to 1241 by semicircle orifice 1110 and signal Pad 1211 connects.
In this utility model, semicircle orifice 1110 reduces the height of semicircle orifice 1110 not through whole ceramic package 1(), and will Lower ceramic layer 111 moves W in package center, and the signal pad 1211 of such pad layer 121 can interior move, and reduces the weldering that plate electrode is installed Dish size;After ceramic package 1 top is without semicircle orifice 1110, so can reduce seal mouth ring 125 width w2, make full use of seal mouth ring 125.Lower ceramic layer 111 can move 0.2-0.5mm in package center, reduces so that plate electrode installs pad profile X with Y 1mm。
The method of this utility model ground connection is: internal earth signal being tied to ground connection bonding and refers to 1242, ground connection bonding refers to 1242 are connected to encapsulate the ground pad 1212 at the back side by metallic vias 120, so can improve the utilization rate in Nian Xin district.Adopt During by way of the present utility model, it is only necessary to seeking silicon chip 3 edge is more than 0.2mm to distance L of Nian Xin district inwall, so encapsulates External shape X and Y can reduce 2mm.
In sum, overall dimensions of the present utility model can reduce more than 3mm, CLCC24 can realize the pad with QFN24 Seamless compatibility can be realized.
The above is only preferred implementation of the present utility model, it should be understood that this utility model is not limited to herein Disclosed form, is not to be taken as the eliminating to other embodiments, and can be used for other combinations various, amendment and environment, and Can be modified by above-mentioned teaching or the technology of association area or knowledge in contemplated scope described herein.And this area Change that personnel are carried out and change, the most all should be in rights appended by this utility model without departing from spirit and scope of the present utility model In the protection domain required.

Claims (7)

1. a miniaturization air-tightness is without lead-in wire ceramic packaging structure, it is characterised in that: include ceramic package (1), bonding die glue (2), silicon chip (3), bonding wire (4) and cover plate (5);Described ceramic package (1) includes ceramic layer (11) and metal layer (12), institute Stating ceramic layer (11) is cavity body structure, and silicon chip (3) is arranged on the Nian Xin district bottom described cavity body structure, institute by bonding die glue (2) Stating ceramic layer (11) and include ceramic layer (112) and lower ceramic layer (111), described metal layer (12) includes seal mouth ring (125) With pad layer (121), described seal mouth ring (125), upper ceramic layer (112), lower ceramic layer (111) and pad layer (121) are from upper past Under set gradually, cover plate (5) is arranged on the top of seal mouth ring (125), and the sidewall of lower ceramic layer (111) is provided with semicircle orifice (1110), bonding wire (4) is used for connecting silicon chip (3) and metal layer (12).
A kind of miniaturization air-tightness the most according to claim 1 is without lead-in wire ceramic packaging structure, it is characterised in that: under described Ceramic layer (111) includes the first ceramic layer (1111), the second ceramic layer (1112) and the 3rd pottery set gradually from the bottom up Layer (1113).
A kind of miniaturization air-tightness the most according to claim 1 is without lead-in wire ceramic packaging structure, it is characterised in that: on described The top view of ceramic layer (112) and lower ceramic layer (111) is rectangular-shaped, and the length and width of lower ceramic layer (111) are less than upper pottery Length and width.
A kind of miniaturization air-tightness the most according to claim 1 is without lead-in wire ceramic packaging structure, it is characterised in that: on described Ceramic layer (112) bottom design has chamfering structure (1120).
A kind of miniaturization air-tightness the most according to claim 1 is without lead-in wire ceramic packaging structure, it is characterised in that: described gold Genusization layer (12) also includes that bonding refers to that layer (124) and metallic vias (120), bonding refer to that layer (124) includes that ground connection bonding refers to (1242) it is bonded refers to (1241) with signal.
A kind of miniaturization air-tightness the most according to claim 5 is without lead-in wire ceramic packaging structure, it is characterised in that connect described in: Ground bonding refers to that (1242) are connected with silicon chip (3) by bonding wire (4).
A kind of miniaturization air-tightness the most according to claim 5 is without lead-in wire ceramic packaging structure, it is characterised in that: described weldering Disc layer (121) includes that ground pad (1212) and signal pad (1211), described ground connection bonding refer to that (1242) pass through metallic vias (120) being connected with ground pad (1212), described signal bonding refers to that (1241) are by semicircle orifice (1110) and signal pad (1211) connect.
CN201620717091.5U 2016-07-08 2016-07-08 A kind of miniaturization air-tightness is without lead-in wire ceramic packaging structure Withdrawn - After Issue CN205789921U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201620717091.5U CN205789921U (en) 2016-07-08 2016-07-08 A kind of miniaturization air-tightness is without lead-in wire ceramic packaging structure

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Application Number Priority Date Filing Date Title
CN201620717091.5U CN205789921U (en) 2016-07-08 2016-07-08 A kind of miniaturization air-tightness is without lead-in wire ceramic packaging structure

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107285274A (en) * 2017-05-10 2017-10-24 中国航空工业集团公司西安飞行自动控制研究所 A kind of three-dimension packaging method of micromachined process
CN116544192A (en) * 2023-07-07 2023-08-04 合肥中航天成电子科技有限公司 CQFN tube shell solder resist structure

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107285274A (en) * 2017-05-10 2017-10-24 中国航空工业集团公司西安飞行自动控制研究所 A kind of three-dimension packaging method of micromachined process
CN107285274B (en) * 2017-05-10 2019-03-01 中国航空工业集团公司西安飞行自动控制研究所 A kind of three-dimension packaging method of micromachined process
CN116544192A (en) * 2023-07-07 2023-08-04 合肥中航天成电子科技有限公司 CQFN tube shell solder resist structure
CN116544192B (en) * 2023-07-07 2023-09-15 合肥中航天成电子科技有限公司 CQFN tube shell solder resist structure

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AV01 Patent right actively abandoned
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Granted publication date: 20161207

Effective date of abandoning: 20190315