CN116544192A - CQFN tube shell solder resist structure - Google Patents
CQFN tube shell solder resist structure Download PDFInfo
- Publication number
- CN116544192A CN116544192A CN202310827369.9A CN202310827369A CN116544192A CN 116544192 A CN116544192 A CN 116544192A CN 202310827369 A CN202310827369 A CN 202310827369A CN 116544192 A CN116544192 A CN 116544192A
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- Prior art keywords
- solder
- cqfn
- solder resist
- ceramic
- layer
- Prior art date
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- Granted
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- 229910000679 solder Inorganic materials 0.000 title claims abstract description 107
- 239000000919 ceramic Substances 0.000 claims abstract description 61
- SWPMTVXRLXPNDP-UHFFFAOYSA-N 4-hydroxy-2,6,6-trimethylcyclohexene-1-carbaldehyde Chemical compound CC1=C(C=O)C(C)(C)CC(O)C1 SWPMTVXRLXPNDP-UHFFFAOYSA-N 0.000 claims abstract description 48
- 238000007789 sealing Methods 0.000 claims abstract description 28
- 238000013461 design Methods 0.000 claims abstract description 12
- 238000001465 metallisation Methods 0.000 claims abstract description 12
- 238000007639 printing Methods 0.000 claims abstract description 7
- 239000002002 slurry Substances 0.000 claims abstract description 7
- 238000005516 engineering process Methods 0.000 claims abstract description 4
- 210000004177 elastic tissue Anatomy 0.000 claims description 22
- 238000005476 soldering Methods 0.000 claims description 19
- 239000007788 liquid Substances 0.000 claims description 18
- 238000003860 storage Methods 0.000 claims description 18
- 239000000843 powder Substances 0.000 claims description 16
- 238000005245 sintering Methods 0.000 claims description 12
- 238000005538 encapsulation Methods 0.000 claims description 11
- 238000000016 photochemical curing Methods 0.000 claims description 10
- 239000002184 metal Substances 0.000 claims description 9
- 229910052751 metal Inorganic materials 0.000 claims description 9
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 claims description 8
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims description 8
- 238000004873 anchoring Methods 0.000 claims description 8
- 238000002844 melting Methods 0.000 claims description 8
- 230000008018 melting Effects 0.000 claims description 8
- 239000002904 solvent Substances 0.000 claims description 7
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 claims description 6
- 239000011347 resin Substances 0.000 claims description 6
- 229920005989 resin Polymers 0.000 claims description 6
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 claims description 5
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 claims description 4
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 claims description 4
- 239000011230 binding agent Substances 0.000 claims description 4
- 238000004891 communication Methods 0.000 claims description 4
- 239000002270 dispersing agent Substances 0.000 claims description 4
- 238000009736 wetting Methods 0.000 claims description 4
- 239000011248 coating agent Substances 0.000 claims description 3
- 238000000576 coating method Methods 0.000 claims description 3
- 239000003365 glass fiber Substances 0.000 claims description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- 239000002245 particle Substances 0.000 claims description 3
- -1 polytetrafluoroethylene structure Polymers 0.000 claims description 3
- NTIZESTWPVYFNL-UHFFFAOYSA-N Methyl isobutyl ketone Chemical compound CC(C)CC(C)=O NTIZESTWPVYFNL-UHFFFAOYSA-N 0.000 claims description 2
- UIHCLUNTQKBZGK-UHFFFAOYSA-N Methyl isobutyl ketone Natural products CCC(C)C(C)=O UIHCLUNTQKBZGK-UHFFFAOYSA-N 0.000 claims description 2
- 238000005452 bending Methods 0.000 claims description 2
- 238000002156 mixing Methods 0.000 claims 1
- 238000005219 brazing Methods 0.000 abstract description 12
- 230000000694 effects Effects 0.000 abstract description 6
- 238000012797 qualification Methods 0.000 abstract description 3
- 239000010410 layer Substances 0.000 description 44
- 238000003466 welding Methods 0.000 description 28
- 238000004806 packaging method and process Methods 0.000 description 17
- 238000001723 curing Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000007581 slurry coating method Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 3
- 239000011247 coating layer Substances 0.000 description 2
- 238000009713 electroplating Methods 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 239000011148 porous material Substances 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 239000000969 carrier Substances 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 238000010897 surface acoustic wave method Methods 0.000 description 1
- 125000003944 tolyl group Chemical group 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/10—Containers; Seals characterised by the material or arrangement of seals between parts, e.g. between cap and base of the container or between leads and walls of the container
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
Abstract
The invention provides a CQFN tube shell solder resist structure applied to the field of CQFN tube shells, a solder resist layer is arranged between a metallization region and a sealing ring of HTCC ceramic, the solder resist layer is arranged at a connecting node of a wall hanging groove and the metallization region, the solder resist layer is a magnetic slurry cover layer, the magnetic slurry cover layer is printed on the upper surface of the HTCC ceramic through a printing technology in a circuit design stage, when the sealing ring and the HTCC ceramic are fixed through brazing, molten solder cannot infiltrate into ceramic slurry, so that overflow of the molten solder is effectively prevented, the overflow solder is prevented from flowing into the wall hanging groove, the phenomenon of unqualified appearance is caused, a good solder resist effect is achieved, the solder resist scheme is simple and easy to implement, the product appearance qualification rate can be improved, the market prospect is realized, and the solder resist structure is suitable for popularization and application.
Description
Technical Field
The application relates to the field of CQFN tube shells, in particular to a CQFN tube shell solder mask structure.
Background
The ceramic quad-leaded Package (Ceramic Quad Flat Non-leaded Package) ceramic Package shell product is similar to the ceramic leadless chip carrier CLCC (Ceramic Leadless Chip Carriers) Package, and has better electrical performance, higher power density and packaging density, higher reliability and lighter weight, and is also applied to the packaging of surface acoustic wave devices, radio frequency, microwave and other devices in circuits such as high-speed, high-frequency AD/DA, DDS and the like.
The CQFN ceramic package shell product has the characteristics of small volume, good heat conductivity, good sealing performance, high mechanical strength and high package reliability, the CQFN package has no traditional lead structure, the conductive path between the inner bonding pad and the outer conductive bonding pad is short, the self inductance and the wiring resistance are very low, so the CQFN ceramic package shell product has excellent electrical performance, in addition, the heat sink bonding pad is directly welded on the circuit board, the heat dissipation is facilitated, the CQFN package bonding pad is used for soldering and electroplating the surface mounting structure shell, and the soldering and electroplating processes are simple and convenient.
However, when the existing CQFN tube shell products are welded with metal parts such as sealing rings, the solder flows down to the wall, so that the phenomenon that the appearance of the CQFN tube shell is unqualified occurs, and therefore, the CQFN tube shell welding-resistant structure is provided to solve the problems.
Disclosure of Invention
The utility model provides a solve the current product and weld metal parts such as seal ring, the solder can flow, lead to the unqualified phenomenon of outward appearance, compare prior art and provide a CQFN tube shell and hinder welded structure, through the design of CQFN tube shell structure, wherein CQFN tube shell structure includes HTCC pottery, the bottom of HTCC pottery is fixed with the metal heat sink layer through the bottom pad, the top of metal heat sink layer glues has the chip, the top of HTCC pottery is through seal ring fixed chip, the avris of HTCC pottery is equipped with a plurality of wall built-up grooves of equidistantly arranging, the top of HTCC pottery is equipped with the metalization district, seal ring is through brazing and metalization district fixed connection, the bottom of bottom pad is equipped with the leg, the avris of bottom pad is equipped with the leg corresponding one by one with the wall built-up groove;
a solder mask is arranged between the metallization region and the sealing ring of the HTCC ceramic, the solder mask is arranged at a connecting node of the wall hanging groove and the metallization region, the solder mask is a magnetic paste covering layer, and the magnetic paste covering layer is printed on the upper surface of the HTCC ceramic in the circuit design stage through a printing technology;
the solder mask layer comprises, by mass, 5-10 parts of a solvent, 40-50 parts of ceramic powder, 1-5 parts of zirconia powder, 5-10 parts of a photosensitive resin, 1-3 parts of a wetting dispersant, 2-4 parts of a binder and 5-7 parts of solder mask ink.
Further, the solvent is at least one selected from toluene, butanone, methyl isobutyl ketone, isopropyl alcohol, ethyl acetate and n-butanol.
Further, the ceramic powder is non-magnetic ceramic powder, and the particle diameter of the ceramic powder is 2-3 mu m.
Further, the printing thickness of the solder mask on the upper surface of the HTCC ceramic is 30-100 mu m, the sintering temperature is 600-900 ℃, and the sintering time is 5-15 min.
Furthermore, before sintering, the solder mask layer needs to be subjected to light curing operation by ultraviolet lamp illumination, the light curing time is 1 min-3 min, the light curing temperature is 90-120 ℃, and the light curing wavelength is 50-300nm.
Further, bonding points are arranged in the HTCC ceramic, the wiring ends of the chip are welded with the bonding points one by one and electrically connected with the bonding points through gold wire ball welding, and the bonding points are electrically connected with the welding pins.
Further, the top of HTCC pottery is equipped with the welded zone, and the welded zone sets up in the solder mask inboard, and the welded zone is used for coating brazing solder, is equipped with a plurality of anchor holes that the equidistance was arranged on the welded zone, and the both sides of welded zone still are equipped with a plurality of anti-overflow chimb that prevent brazing solder excessive.
Further, the both sides of welding district still are equipped with the reservoir, and the top of reservoir is packaged with the encapsulation layer, and the bottom of encapsulation layer is equipped with a plurality of elastic fiber, and the reservoir passes through the intercommunicating pore intercommunication setting with the anchor hole.
Further, the liquid storage tank is sealed and kept airtight by the packaging layer, and the packaging layer is of a polytetrafluoroethylene structure with the melting point temperature being higher than that of the brazing solder.
Further, the melting point temperature of the elastic fiber is higher than that of the packaging layer, the elastic fiber has elastic force which is bent upwards and is close to the sealing ring, the elastic fiber is glass fiber, and one end of the elastic fiber is fixed on one side of the welding area.
Compared with the prior art, the advantage of this application lies in:
(1) Through the structural design of the solder mask with photosensitive resin, after the solder mask is printed, after the photo-curing operation, the solder mask is preliminarily fixed, so that the solder mask can be effectively prevented from separating or cracking before being sintered and cured, the forming effect of the solder mask during sintering is ensured, and the yield of the solder mask is improved.
(2) According to the invention, the magnetic slurry coating is printed on the upper surface of the HTCC ceramic, and when the sealing ring and the HTCC ceramic are fixed through brazing, the molten solder does not infiltrate the ceramic slurry, so that overflow of the molten solder is effectively prevented, the phenomenon of unqualified appearance caused by overflow of the molten solder to a wall hanging groove is prevented, a good welding resistance effect is achieved, the welding resistance scheme is simple and easy to implement, the product appearance qualification rate can be improved, the market prospect is provided, and the method is suitable for popularization and application.
(3) Through the welding area design with the anchor hole, when fixing through brazing between seal ring and HTCC pottery, the molten solder can partly flow into the anchor hole, and when the solder solidifies, the solder that flows into the anchor hole forms the anchor point to this has promoted the welding strength between seal ring and the HTCC pottery, has increased structural strength.
(4) Through the design of the packaging layer with elastic fibers and the welding interval with the liquid storage tank, when the solder between the sealing ring and the HTCC ceramic is excessive, the solder overflows through the overflow-preventing convex edge in a molten state and enters the upper part of the packaging layer, and the temperature of the packaging layer increases along with the heat transfer of the solder, so that the excessive solder flows into the liquid storage tank to perform preliminary solder resisting action, on the one hand, and on the other hand, the liquid storage tank is opened from a sealing state along with the melting of the packaging layer, a communicating vessel is formed between the liquid storage tank and the anchoring hole, and the excessive solder on the welding area flows into the liquid storage tank through the communicating hole, so that the solder resisting efficiency is improved, the double-layer solder resisting effect is formed by matching with the design of the solder resisting layer, and the excessive solder can be prevented from overflowing to the wall hanging tank or overflowing to the chip packaging area, and the protection is strong.
(5) After the packaging layer melts, the elastic fiber loses the binding force, and is bent by utilizing the elasticity of the elastic fiber and upwards approaching to the sealing ring, so that excessive solder on a welding area is prevented from overflowing through the overflow-preventing convex edge and can only flow back to the liquid storage tank through the communication hole, and on the other hand, the bent elastic fiber is combined with the solder to form a lacing wire structure, so that the welding strength between the sealing ring and the HTCC ceramic is further improved.
Drawings
FIG. 1 is a schematic diagram of the front structure of the present application;
FIG. 2 is a schematic view of the bottom structure of the present application;
FIG. 3 is a schematic diagram of an exploded structure of the present application;
FIG. 4 is a schematic structural diagram of HTCC ceramics proposed in the present application;
FIG. 5 is a schematic diagram of an exploded structure of HTCC ceramics proposed in the present application;
FIG. 6 is a schematic cross-sectional view of the present application;
FIG. 7 is an enlarged schematic view of the portion A in FIG. 6;
FIG. 8 is a schematic view showing a state in which solder in the present application does not overflow;
fig. 9 is a schematic view showing a state in which solder is overflowed in the present application.
The reference numerals in the figures illustrate:
HTCC ceramic 1, wall hanging groove 11, bonding point 12, chip 2, sealing ring 3, bottom bonding pad 4, soldering leg 41, hanging leg 42, metal heat sink layer 5, solder mask 6, soldering zone 7, anti-overflow convex edge 71, liquid storage groove 72, anchoring hole 73, communication hole 74, packaging layer 8, and elastic fiber 81.
Detailed Description
The embodiments will be described in detail and throughout the specification with reference to the drawings, wherein, based on the embodiments in the application, all other embodiments obtained by persons skilled in the art without making creative efforts are within the scope of protection of the application.
Example 1:
the invention provides a CQFN tube shell solder resist structure, please refer to fig. 1-5, which comprises a CQFN tube shell structure, wherein the CQFN tube shell structure comprises HTCC ceramic 1, a metal heat sink layer 5 is fixed at the bottom of the HTCC ceramic 1 through a bottom bonding pad 4, a chip 2 is glued at the top of the metal heat sink layer 5, the chip 2 is fixed at the top of the HTCC ceramic 1 through a sealing ring 3, a plurality of wall hanging grooves 11 which are equidistantly distributed are arranged on the side of the HTCC ceramic 1, a metalized area is arranged at the top of the HTCC ceramic 1, the sealing ring 3 is fixedly connected with the metalized area through soldering, a soldering leg 41 is arranged at the bottom of the bottom bonding pad 4, hanging legs 42 which are in one-to-one correspondence with the wall hanging grooves 11 are arranged on the side of the bottom bonding pad 4, bonding points 12 are arranged in the HTCC ceramic 1, and the wiring ends of the chip 2 are in one-to-one welded and electrically connected with the bonding points 12 through gold ball soldering;
a solder mask layer 6 is arranged between the metallization region of the HTCC ceramic 1 and the sealing ring 3, the solder mask layer 6 is arranged at the connecting node of the wall hanging groove 11 and the metallization region, the solder mask layer 6 is a magnetic slurry coating layer, and the magnetic slurry coating layer is printed on the upper surface of the HTCC ceramic 1 in the circuit design stage through a printing technology;
the solder mask layer 6 comprises, by mass, 5-10 parts of a solvent, 40-50 parts of ceramic powder, 1-5 parts of zirconia powder, 5-10 parts of a photosensitive resin, 1-3 parts of a wetting dispersant, 2-4 parts of a binder and 5-7 parts of solder mask ink.
In this embodiment, the solvent is toluene, wherein the ceramic powder is a non-magnetic ceramic powder, and the particle diameter of the ceramic powder is 2-3 μm.
Further, the printing thickness of the solder mask layer 6 on the upper surface of the HTCC ceramic 1 is 30-100 mu m, the sintering temperature is 600-900 ℃, the sintering time is 5-15 min, the photo-curing operation is required to be carried out on the solder mask layer 6 by ultraviolet lamp illumination before sintering, the photo-curing time is 1-3 min, the photo-curing temperature is 90-120 ℃, and the photo-curing wavelength is 50-300nm.
Through the structural design of the solder mask layer 6 with photosensitive resin, after the solder mask layer 6 is printed, after the photo-curing operation, the solder mask layer 6 is preliminarily fixed, so that the solder mask layer 6 can be effectively prevented from being separated or cracked before being sintered and cured, the forming effect of the solder mask layer 6 during sintering is ensured, and the yield of the solder mask layer 6 is improved.
According to the invention, the magnetic slurry coating is printed on the upper surface of the HTCC ceramic 1, when the sealing ring 3 and the HTCC ceramic 1 are fixed by brazing, the molten solder cannot infiltrate the ceramic slurry, so that overflow of the molten solder is effectively prevented, the phenomenon of unqualified appearance caused by overflow of the molten solder is prevented from flowing to the wall hanging groove 11, a good welding resistance effect is achieved, the welding resistance scheme is simple and easy to implement, the product appearance qualification rate can be improved, and the method has market prospects and is suitable for popularization and application.
Example 2:
the present invention provides a CQFN package solder resist structure, please refer to fig. 1-9, wherein the same or corresponding components as those in embodiment 1 are denoted by the corresponding reference numerals as in embodiment 1, and only the differences from embodiment 1 are described below for the sake of brevity:
the top of HTCC pottery 1 is equipped with welding zone 7, welding zone 7 sets up in the solder mask 6 inboard, welding zone 7 is used for coating brazing solder, be equipped with a plurality of equidistance anchor holes 73 of arranging on the welding zone 7, the both sides of welding zone 7 still are equipped with a plurality of anti-overflow chimb 71 that prevent brazing solder overflow, the both sides of welding zone 7 still are equipped with reservoir 72, the top encapsulation of reservoir 72 has encapsulation layer 8, the bottom of encapsulation layer 8 is equipped with a plurality of elastic fiber 81, set up through the intercommunicating pore 74 intercommunication between reservoir 72 and anchor hole 73.
Referring to fig. 8, by designing the welding area 7 with the anchoring hole 73, when the sealing ring 3 and the HTCC ceramic 1 are fixed by brazing, the molten solder partially flows into the anchoring hole 73, and when the solder solidifies, the solder flowing into the anchoring hole 73 forms an anchoring point, thereby improving the welding strength between the sealing ring 3 and the HTCC ceramic 1 and increasing the structural strength.
In this embodiment, the sealing layer 8 seals the liquid storage tank 72 to be airtight, the sealing layer 8 is a polytetrafluoroethylene structure with a melting point temperature higher than that of the brazing solder, the elastic fiber 81 has an elastic force of bending upwards to be close to the sealing ring 3, the elastic fiber 81 is glass fiber, and one end of the elastic fiber 81 is fixed at one side of the welding area 7.
In this embodiment, through the design between the packaging layer 8 with the elastic fiber 81 and the welding area 7 with the liquid storage tank 72, when the solder between the sealing ring 3 and the HTCC ceramic 1 is excessive, the solder overflows the anti-overflow convex edge 71 in the molten state and enters the upper part of the packaging layer 8, and along with the heat transfer of the solder, the temperature of the packaging layer 8 increases, a melting phenomenon occurs, so that the excessive solder flows into the liquid storage tank 72 to perform a preliminary solder-resisting action, and on the other hand, along with the melting of the packaging layer 8, the liquid storage tank 72 is opened from a sealed state, a communicating vessel is formed between the liquid storage tank 72 and the anchoring hole 73, the excessive solder on the welding area 7 flows into the liquid storage tank 72 through the communicating hole 74, so that the solder-resisting efficiency is improved, and the design of the solder-resisting layer 6 is matched, the excessive solder is prevented from overflowing to the wall-hanging groove 11 or overflowing to the packaging area of the chip 2, and the protection performance is strong.
Meanwhile, after the encapsulation layer 8 is melted, the elastic fiber 81 loses the binding force, and is bent upwards near the sealing ring 3 by utilizing the self elasticity, so that on one hand, excessive solder on the welding area 7 is prevented from overflowing through the anti-overflow convex edge 71, and can only flow back to the liquid storage tank 72 through the communication hole 74, and on the other hand, the bent elastic fiber 81 is combined with the solder to form a lacing wire structure, so that the welding strength between the sealing ring 3 and the HTCC ceramic 1 is further improved.
The foregoing is merely a preferred embodiment of the present application, which is used in connection with the actual requirement, but the scope of the present application is not limited thereto.
Claims (10)
1. The CQFN tube shell soldering-resistant structure comprises a CQFN tube shell structure, wherein the CQFN tube shell structure comprises HTCC ceramic (1), a metal heat sink layer (5) is fixed at the bottom of the HTCC ceramic (1) through a bottom bonding pad (4), a chip (2) is glued at the top of the metal heat sink layer (5), the chip (2) is fixed at the top of the HTCC ceramic (1) through a sealing ring (3), the CQFN tube shell soldering-resistant structure is characterized in that a plurality of wall hanging grooves (11) which are distributed at equal intervals are formed in the side of the HTCC ceramic (1), a metallization area is formed at the top of the HTCC ceramic (1), the sealing ring (3) is fixedly connected with the metallization area through soldering, soldering pins (41) are arranged at the bottom of the bottom bonding pad (4), and the wall hanging pins (42) which are in one-to-one correspondence with the wall hanging grooves (11) are formed in the side of the bottom bonding pad (4).
A solder mask layer (6) is arranged between a metallization area and a sealing ring (3) of the HTCC ceramic (1), the solder mask layer (6) is arranged at a connecting node of a wall hanging groove (11) and the metallization area, the solder mask layer (6) is a magnetic slurry covering layer, and the magnetic slurry covering layer is printed on the upper surface of the HTCC ceramic (1) in a circuit design stage through a printing technology.
2. The CQFN package solder resist structure of claim 1, wherein the solder resist layer (6) is prepared by mixing and sintering a solvent, ceramic powder, zirconia powder, photosensitive resin, a wetting dispersant, a binder and solder resist ink, and comprises, by mass, 5-10 parts of the solvent, 40-50 parts of the ceramic powder, 1-5 parts of the zirconia powder, 5-10 parts of the photosensitive resin, 1-3 parts of the wetting dispersant, 2-4 parts of the binder and 5-7 parts of the solder resist ink;
the solvent is at least one selected from toluene, butanone, methyl isobutyl ketone, isopropanol, ethyl acetate and n-butanol.
3. The CQFN package solder resist structure of claim 2, wherein said ceramic powder is a non-magnetic ceramic powder having a particle diameter of 2-3 μm.
4. The CQFN package solder resist structure of claim 1, wherein the printing thickness of the solder resist layer (6) on the upper surface of the HTCC ceramic (1) is 30-100 μm, the sintering temperature is 600-900 ℃, and the sintering time is 5-15 min.
5. The CQFN tube shell solder resist structure of claim 4, wherein said solder resist layer (6) is subjected to a photo-curing operation by irradiation of ultraviolet light for a photo-curing time of 1 min-3 min, a photo-curing temperature of 90 ℃ -120 ℃ and a photo-curing wavelength of 50-300nm before sintering.
6. The CQFN package solder resist structure of claim 1, wherein bond points (12) are provided in said HTCC ceramic (1), terminals of said chip (2) are soldered to said bond points (12) one by one and electrically connected to said bond points (12) by gold wire ball soldering, and said bond points (12) are electrically connected to said solder pins (41).
7. The CQFN shell-and-tube solder-resist structure of claim 1, characterized in that the top of said HTCC ceramic (1) is provided with a soldering zone (7), said soldering zone (7) is disposed inside the solder mask layer (6), said soldering zone (7) is used for coating solder, said soldering zone (7) is provided with a plurality of anchor holes (73) arranged at equal intervals, and both sides of said soldering zone (7) are further provided with a plurality of anti-overflow flanges (71) for preventing solder from overflowing.
8. The CQFN package solder resist structure of claim 7, wherein the two sides of said soldering area (7) are further provided with a liquid storage tank (72), the top of said liquid storage tank (72) is encapsulated with an encapsulation layer (8), the bottom of said encapsulation layer (8) is provided with a plurality of elastic fibers (81), and said liquid storage tank (72) and said anchoring hole (73) are communicated by a communication hole (74).
9. The CQFN package solder resist structure of claim 8, wherein said encapsulation layer (8) hermetically maintains the reservoir (72) airtight, said encapsulation layer (8) being a polytetrafluoroethylene structure having a melting point temperature greater than the solder braze.
10. The CQFN package solder resist structure of claim 8, wherein the melting point temperature of said elastic fiber (81) is higher than the encapsulation layer (8), said elastic fiber (81) has an elastic force of bending upward close to the sealing ring (3), said elastic fiber (81) is glass fiber, and one end of said elastic fiber (81) is fixed at one side of the soldering zone (7).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310827369.9A CN116544192B (en) | 2023-07-07 | 2023-07-07 | CQFN tube shell solder resist structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310827369.9A CN116544192B (en) | 2023-07-07 | 2023-07-07 | CQFN tube shell solder resist structure |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN116544192A true CN116544192A (en) | 2023-08-04 |
| CN116544192B CN116544192B (en) | 2023-09-15 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202310827369.9A Active CN116544192B (en) | 2023-07-07 | 2023-07-07 | CQFN tube shell solder resist structure |
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| Country | Link |
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| CN (1) | CN116544192B (en) |
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| KR20140118218A (en) * | 2013-03-28 | 2014-10-08 | 주식회사 엘 앤 에프 | Solder resist composition improved thermal conduction rate |
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