CN205724852U - A kind of temperature detection, protection circuit and system - Google Patents
A kind of temperature detection, protection circuit and system Download PDFInfo
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- CN205724852U CN205724852U CN201620330009.3U CN201620330009U CN205724852U CN 205724852 U CN205724852 U CN 205724852U CN 201620330009 U CN201620330009 U CN 201620330009U CN 205724852 U CN205724852 U CN 205724852U
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Abstract
This application provides a kind of temperature detection, protection circuit and system, including: temperature collection circuit and integrated chip, integrated chip includes ON-OFF control circuit, power supply provides circuit, first bleeder circuit, second bleeder circuit and comparison circuit, one end of temperature collection circuit is connected with the temperature sampling point of battery core to be measured, the other end is connected through one end of ON-OFF control circuit with the first bleeder circuit, the other end of the first bleeder circuit and one end of the second bleeder circuit all provide one end of circuit to be connected with power supply, the other end of the second bleeder circuit is connected with comparison circuit, one end that ON-OFF control circuit is connected with the first bleeder circuit is connected with comparison circuit.The application is built-in by power drives, without providing external power supply to drive pin for each temperature sampling point, and provide the output of circuit to carry out dividing potential drop power supply by two circuit, second bleeder circuit produces internal reference voltage, without providing external reference voltage pin for each temperature sampling point, decrease taking of chip pin.
Description
Technical field
The application relates to battery protection technical field, particularly relates to a kind of temperature detection, protection circuit and system.
Background technology
The lithium ion battery being made up of elemental lithium has the advantages such as discharge current is big, internal resistance is low, life-span length, is widely used at present.But lithium ion battery in use forbids overcharge, overdischarge and short circuit, otherwise can cause the accidents such as shorter battery life, on fire or blast, therefore, type lithium battery can be filled and would generally connect one block of charge-discharge protection circuit plate to protect the safety of battery core.
Multiple batteries protection circuit generally realizes various defencive function to battery, such as: charging overvoltage protection, electric discharge overvoltage protection, electric discharge overcurrent protection, short-circuit protection etc..When battery core temperature anomaly, it is also carried out protecting control, will further improve the safety of lithium battery.Such as battery core temperature forbids electric discharge more than 70 DEG C or less than-10 DEG C；When battery core temperature more than 60 DEG C or less than 0 DEG C forbid charging.
Multiple batteries protection circuit of the prior art needs the temperature detection for each battery core to provide a power drives pin and reference voltage pin, and when temperature detection and the protection carrying out more piece battery core, required number of pins is more.
Prior art deficiency is:
The temperature detection of each battery core is required for taking a power drives pin and reference voltage pin, causes the chip pin shared by the protection circuit of more piece battery core more.
Summary of the invention
The embodiment of the present application proposes a kind of temperature detection, protection circuit and system; it is required for taking a power drives pin and reference voltage pin with the temperature detection of each battery core in solution prior art, causes the technical problem that the chip pin shared by the protection circuit of more piece battery core is more.
First aspect, the embodiment of the present application provides a kind of temperature sensing circuit, including: temperature collection circuit and integrated chip, described integrated chip includes ON-OFF control circuit, power supply provides circuit, first bleeder circuit, second bleeder circuit and comparison circuit, described temperature collection circuit is for carrying out temperature sampling to battery core to be measured, second end of described temperature collection circuit is connected with the first end of the first bleeder circuit through described ON-OFF control circuit, second end of described first bleeder circuit all provides the first end of circuit to be connected with described power supply with the first end of described second bleeder circuit, second end output internal reference voltage of described second bleeder circuit is connected with described comparison circuit, one end that described ON-OFF control circuit is connected with the first bleeder circuit is connected with described comparison circuit as temperature detection end.
Second aspect; the embodiment of the present application proposes a kind of temperature protection circuit; including said temperature testing circuit, switch protecting circuit and the logic control device being positioned at described integrated chip; the outfan of the plurality of comparator is all connected with described logic control device; the outfan of described logic control device is connected with described switch protecting circuit, and described switch protecting circuit is connected with the second end of the first end of described temperature collection circuit and described second bleeder circuit.
3rd aspect; the embodiment of the present application proposes a kind of temperature protection system; including said temperature protection circuit and the battery core of multi-section serial; wherein; described power supply provides the second end of circuit be connected with the positive pole of multi-section serial battery core and be connected to the first external connection terminal, and all negative poles with described multi-section serial battery core are connected the first end of described temperature collection circuit with the second end of described second bleeder circuit.
Have the beneficial effect that:
The technical scheme provided due to the embodiment of the present application, power drives is built-in, in integrated chip, include that power supply provides circuit, described power supply is provided the voltage of circuit output to carry out dividing potential drop by the first bleeder circuit and the second bleeder circuit respectively, described power supply provides a branch (the i.e. first bleeder circuit) of circuit to be connected with external temperature collection circuit through ON-OFF control circuit, described external temperature collection circuit only need to can obtain power supply by the first bleeder circuit described in ON-OFF control circuit time-sharing multiplex, without providing external power supply to drive pin for each temperature sampling point, and, described power supply provides another branch (the i.e. second bleeder circuit) of circuit can produce internal reference voltage, without the reference voltage input pin extra for the offer of each temperature sampling point, such that it is able to greatly reduce taking of chip pin.
Accompanying drawing explanation
The specific embodiment of the application is described below with reference to accompanying drawings, wherein:
Fig. 1 shows the structural representation of more piece battery core temperature protection circuit in prior art；
Fig. 2 shows the structural representation of temperature sensing circuit in the embodiment of the present application one；
Fig. 3 shows the structural representation of system for detecting temperature in the embodiment of the present application two；
Fig. 4 shows the structural representation of temperature protection circuit in the embodiment of the present application three；
Fig. 5 shows the structural representation of temperature protection system in the embodiment of the present application four；
Fig. 6 shows the concrete structure schematic diagram of many battery cores temperature protection system in the embodiment of the present application six；
Fig. 7 shows the schematic flow sheet that in the embodiment of the present application seven, many battery cores temperature checking method is implemented；
Fig. 8 shows the schematic flow sheet that in the embodiment of the present application eight, many battery cores temperature protecting method is implemented.
Detailed description of the invention
Technical scheme and advantage in order to make the application are clearer, below in conjunction with accompanying drawing, the exemplary embodiment of the application is described in more detail, obviously, described embodiment is only the exhaustive of a part of embodiment of the application rather than all embodiments.And in the case of not conflicting, the embodiment in this explanation and the feature in embodiment can be combined with each other.
Inventor note that during invention
In the prior art, the power supply required for the temperature detection of each battery core is that external power supply drives, and is required for taking a pin of battery core protection chip；Additionally, the reference voltage required for the temperature detection of each battery core is external input reference voltage, also it is required for taking an extra pin of battery core protection chip.
Therefore, the temperature detection for each battery core is offered to a power drives pin and reference voltage pin, and the circuit for more piece battery core temperature detection and defencive function then needs more number of pins.
In addition, being offered to a non-essential resistance for each battery core in prior art, the number of elements of required chip exterior is more.
Illustrate with the temperature protection circuit of three economize on electricity cores below.
Fig. 1 shows the structural representation of more piece battery core temperature protection circuit in prior art, as it can be seen, dotted line frame refers to that battery core protects chip internal structure, is pin at the node intersected with dotted line frame, and Fig. 1 includes three economize on electricity core BATA1～BATA3, for BATA1Temperature detection provide non-essential resistance R1With thermo-sensitive resistor RN1(first pin), for BATA2Temperature detection provide non-essential resistance R2With thermo-sensitive resistor RN2(second pin), for BATA3Temperature detection provide non-essential resistance R3With thermo-sensitive resistor RN3(the 3rd pin), for BATA1Temperature detection additionally provide an external input reference voltage VR1(the 4th pin), for BATA2Temperature detection additionally provide an external input reference voltage VR2(the 5th pin), for BATA3Temperature detection additionally provide an external input reference voltage VR3(the 6th pin).
From the foregoing, it will be observed that the temperature protection circuits of three economize on electricity cores at least need 6 pins for temperature detection, along with the increasing of quantity of battery core, then it is doubled and redoubled for the chip pin quantity needed for temperature detection, occupies more chip pin；And the temperature protection circuit of three economize on electricity cores at least needs 3 non-essential resistances, when battery core increasing number, the component number of required chip exterior is the most more.
For above-mentioned deficiency; the embodiment of the present application proposes a kind of temperature detection, protection circuit and system; power drives is built-in; without providing a pin for each battery core; and by by built-in power drives voltage; built-in resistor dividing potential drop is used to produce reference voltage, it is not necessary to provide extra pin to carry out external input reference voltage for each battery core.
Using the technical scheme of the application, take chip pin less, the temperature detection for each battery core only need to provide a chip pin; and; the component number of required chip exterior is less, and the temperature detection for each battery core only needs a thermo-sensitive resistor, can realize temperature detection and defencive function.
For the ease of the enforcement of the application, below in conjunction with specific embodiment mode, more piece battery core temperature detection, protection circuit and system provided herein, method are illustrated.
Embodiment one,
nullFig. 2 shows the structural representation of temperature sensing circuit in the embodiment of the present application one，As shown in the figure，Described temperature sensing circuit may include that temperature collection circuit and integrated chip，Described integrated chip can include ON-OFF control circuit、Power supply provides circuit、First bleeder circuit、Second bleeder circuit and comparison circuit，Described temperature collection circuit is for carrying out temperature sampling to battery core to be measured，Second end of described temperature collection circuit is connected with the first end of the first bleeder circuit through described ON-OFF control circuit，Second end of described first bleeder circuit all provides the first end of circuit to be connected with described power supply with the first end of described second bleeder circuit，Second end output internal reference voltage of described second bleeder circuit is connected with described comparison circuit，One end that described ON-OFF control circuit is connected with the first bleeder circuit is connected with described comparison circuit as temperature detection end.
When being embodied as, described temperature collection circuit may be used for gathering the temperature of battery core, generally can be placed in the outside of described integrated chip, the first end of described temperature collection circuit can be connected with the temperature sampling point of battery core to be measured, for detecting the temperature of described battery core to be measured；When being embodied as, multiple temperature sampling point can be set in same battery core, multiple temperature sampling spot check testing temperatures for same battery core, it is also possible to arrange one or more temperature sampling point in each battery core, for one or more temperature sampling spot check testing temperatures of multiple battery cores.
nullSecond end of described temperature collection circuit can be connected with one end of described ON-OFF control circuit，The other end of described ON-OFF control circuit can be connected with the first end of the first bleeder circuit as temperature detection end TSEN，Second end of described first bleeder circuit can provide the first end of circuit to be connected with described power supply，First end of described second bleeder circuit also provides the first end of circuit to be connected with described power supply，Described first bleeder circuit and described second bleeder circuit for providing the voltage of circuit output to carry out dividing potential drop by described power supply，Described ON-OFF control circuit is connected with comparison circuit as one end of temperature detection end TSEN，Second end of described second bleeder circuit can be connected with described comparison circuit，The voltage of described second bleeder circuit output can be as internal reference voltage，Described comparison circuit is by the size of the temperature detection point voltage of C.T test side TSEN with described internal reference voltage，Judge whether the temperature of described battery core reaches temperature threshold.
When being embodied as, described power supply provides circuit can be external power supply, it is also possible to for battery core to be measured.If described power supply provides circuit to be external power supply, the second end of described first bleeder circuit is all connected with described external power supply with the first end of described second bleeder circuit；If described power supply provides circuit to be battery core to be measured, second end of described first bleeder circuit and the first end of described second bleeder circuit can all positive pole with described battery core to be measured be connected, and the first end of described temperature collection circuit and the second end of described second bleeder circuit can all negative pole with described battery core to be measured be connected.
The temperature sensing circuit provided due to the embodiment of the present application, power drives is built-in, in integrated chip, include that power supply provides circuit, described power supply is provided the voltage of circuit output to carry out dividing potential drop by the first bleeder circuit and the second bleeder circuit respectively, described power supply provides a branch (the i.e. first bleeder circuit) of circuit to be connected with external temperature collection circuit through ON-OFF control circuit, described external temperature collection circuit only need to can obtain power supply by the first bleeder circuit described in ON-OFF control circuit time-sharing multiplex, without providing external power supply to drive pin for each temperature sampling point, and, described power supply provides another branch (the i.e. second bleeder circuit) of circuit can produce internal reference voltage, without the reference voltage pin extra for the offer of each temperature sampling point, such that it is able to greatly reduce taking of chip pin.
In enforcement, described temperature collection circuit specifically can include the multiple thermo-sensitive resistor RN for detecting battery core temperature to be measured1～RNn, described ON-OFF control circuit can include the switch K that multiple subject clock signal controls1～Kn, described first bleeder circuit can include integrated resistor, and the first end of each thermo-sensitive resistor is connected with earth terminal, and the second end of each thermo-sensitive resistor can be connected with the first end of switch corresponding thereto as the second end of temperature collection circuit, multiple switch K1～KnThe second end be connected and can be connected with the first end of described integrated resistor as temperature detection end TSEN, the first end of described integrated resistor is the first end of described first bleeder circuit.
When being embodied as, battery core quantity can be arbitrary number, such as can up to 20 battery cores.Thermo-sensitive resistor can use positive temperature coefficient resistor, it would however also be possible to employ negative temperature coefficient resister.
Assuming that battery core quantity can be 1～n, the described thermo-sensitive resistor for detecting battery core temperature is also 1～n, and described thermo-sensitive resistor position is temperature sampling point position, i.e. thermo-sensitive resistor is placed in and the most just detects temperature where.Battery core quantity can be the same with the quantity of temperature sampling point, such that it is able to the most complete realizes temperature detection and protection, i.e. the temperature of each battery core is detected.
1st battery core can pass through thermo-sensitive resistor RN1Detection temperature, described RN1With switch K1It is connected；
2nd battery core can pass through thermo-sensitive resistor RN2Detection temperature, described RN2With switch K2It is connected；
……
I-th battery core can pass through thermo-sensitive resistor RNiDetection temperature, described RNiWith switch KiIt is connected；
……
Described connected RN1With switch K1、RN2With switch K2、……RNiWith switch KiBetween be in parallel, be all connected with described integrated resistor, control K by clock signal1、K2、……KiON/OFF carry out integrated resistor described in time-sharing multiplex.
Wherein, described integrated resistor can use low-temperature coefficient, low-temperature coefficient resistance can be the resistance that temperature stability is strong, and this quasi-resistance is when variations in temperature, and resistance size only has the least change, such as: 5PPM/ DEG C.
In the embodiment of the present application, owing to integrated resistor uses low-temperature coefficient and is positioned at chip internal, away from battery core, so not affected by battery core temperature；And, the application uses two groups of resistance to same voltage, one of which electric resistance partial pressure is same type of series resistance, forms internal reference voltage, and another group electric resistance partial pressure is made up of the thermo-sensitive resistor outside integrated resistor in chip and chip with bigger temperature coefficient.
In enforcement, the described integrated chip of described temperature sensing circuit may further include: agitator OSC, the switch that each subject clock signal controls is specifically as follows the corresponding clock signal produced by described agitator OSC and controls, a clock signal in the described agitator OSC the plurality of clock signal of loop control in predetermined period is in the first level, when this first level, corresponding switch conduction.
When being embodied as, described first level can be low level, it is also possible to for high level.Described agitator OSC can produce n clock signal ck1～ckn, and each clock signal is used for controlling to switch accordingly, ckiWhen being the first level (such as: low level), switch KiConducting.Described agitator OSC clock signal in the plurality of clock signal of loop control within a cycle is in the first level (such as: low level), after an end cycle, each switch all can be switched on once, so may insure that each temperature sampling point is all detected.
The embodiment of the present application switches the connection of integrated resistor and external thermo-sensitive resistor by switch, thus reaches the purpose of time-sharing multiplex.
In enforcement, described second bleeder circuit can include multiple series resistance, first end of first resistance of the plurality of series resistance provides circuit to be connected as the first end of described second bleeder circuit with described power supply, described comparison circuit includes the comparator of multiple parallel connection, described temperature detection end TSEN is connected with the first input end of described comparator, in addition to last resistance, the second end of the resistance of each series connection is connected with the second input of corresponding comparator respectively, second end of last resistance described is connected with the first end of described temperature collection circuit as the second end of described second bleeder circuit.
When being embodied as, described second bleeder circuit can include multiple resistance R being sequentially connected in series1～Rm, first resistance of the plurality of series resistance (is assumed to be R1) the first end can with described power supply provide circuit be connected, in addition to last resistance, the resistance of each series connection (is assumed to be R2～Rm-1) the second end be connected with the second input of corresponding comparator respectively, last resistance described (is assumed to be Rm) the second end be connected with the first end of described temperature collection circuit, last resistance described (is assumed to be Rm) the second end can be connected with the first end of described temperature collection circuit.
The first input end of described comparator can be positive input terminal, and the second input of described comparator can be negative input end；Or, the first input end of described comparator can be negative input end, and the second input of described comparator can be positive input terminal.
In the embodiment of the present application, in addition to last resistance, the resistance of each series connection (is assumed to be R2～Rm-1) the second end be connected with the second input of corresponding comparator respectively, can be to comparator output voltage as internal reference voltage, thus without the external input reference voltage pin extra for the offer of each temperature sampling point, the pin reducing integrated chip takies.
In enforcement, described power supply provides circuit can be power supply and voltage regulator LDO, first end of described voltage regulator provides the first end of circuit to be connected with the first end of the second end of described first bleeder circuit, described second bleeder circuit as power supply, second end of described voltage regulator LDO is connected with described power supply, and described voltage regulator LDO is used for the voltage-regulation of described power supply as presetting builtin voltage.
When being embodied as, described power supply can be external power supply.
In enforcement, described power supply can be battery core to be measured, and second end of described voltage regulator LDO is connected with the positive pole of described battery core to be measured, and the negative pole of described battery core to be measured is connected with the second end of the first end of described temperature collection circuit, described second bleeder circuit.
Owing to the application uses voltage regulator LDO can produce internal low voltage, comparator is again with this low voltage power supply simultaneously, therefore, comparator can use low-voltage device to design completely, so that chip occupying area is less, chip manufacturing cost is relatively low (and directly with external power drives in prior art, typically require comparator and use high tension apparatus, chip occupying area is compared with big and chip manufacturing is relatively costly, and usual below 5V is low pressure, and more than 5V is high pressure).
In enforcement, the quantity of described comparator Cmp specifically can determine according to the quantity of temperature protection threshold value.
When being embodied as; described temperature protection threshold value generally can include that high temperature forbids that charging temperature threshold value, high temperature forbid that discharge temp threshold value, low temperature forbid that charging temperature threshold value, low temperature forbid 4 threshold values such as discharge temp threshold value; therefore; the quantity of comparator Cmp can also be 4, such as: Cmp1, Cmp2, Cmp3, Cmp4.
Owing to the general deviation of the absolute value of built-in chip type resistance is relatively big, such as: +/-20%, in order to improve the accuracy of the absolute value of integrated resistor further, the embodiment of the present application can also be implemented in the following way.
In enforcement, the non-gate polysilicon layer that described integrated resistor specifically can use N+ to adulterate is resistance material, and described N+ doping is specifically as follows the doping of the N+ after lithography process.
When being embodied as, in order to realize the effect of lower temperature coefficient, integrated resistor can use the second polysilicon layer (non-gate polysilicon layer) to do resistance material, then realize lower temperature coefficient by adjustment doping content, be shown experimentally that N+ doping is lower than the temperature coefficient coefficient of the polysilicon resistance of P+ doping.
Additionally, in order to obtain lower temperature coefficient, one photoetching can be increased and adjusts the concentration of doping N+ specially, realize optimum efficiency.
The embodiment of the present application solves the problem that the deviation of chip internal resistance absolute value is bigger by the way, improves the accuracy of integrated resistor.
The plurality of series resistance is then without trimming, it is only necessary to relative value accurately, in integrated circuit technology, can realize the most high-precision relatively accurate by matched design.
Embodiment two,
Fig. 3 shows the structural representation of system for detecting temperature in the embodiment of the present application two, as shown in the figure, described system for detecting temperature can include battery core BATA of said temperature testing circuit and multi-section serial, wherein, described power supply provides the second end of circuit be connected with the positive pole of multi-section serial battery core and be connected to the first external connection terminal, and all negative poles with described multi-section serial battery core are connected the first end of described temperature collection circuit with the second end of described second bleeder circuit.
When being embodied as, described power supply provides circuit can be power supply and voltage regulator LDO, described power supply can be using the battery core of described multi-section serial as power supply, the positive pole of multi-section serial battery core is connected with described voltage regulator, the cell voltage of multi-section serial battery core can be converted to the low-voltage of inside by described voltage regulator, cell voltage may reduce with energy content of battery consumption, but the described low-voltage of described voltage regulator conversion will not change with cell voltage change.
The negative pole of described multi-section serial battery core can be with ground connection GND, and the first end of described temperature collection circuit is connected with the negative pole of described multi-section serial battery core, and the second end of described second bleeder circuit also negative pole with described multi-section serial battery core is connected.
When being embodied as, when described temperature collection circuit is multiple thermo-sensitive resistor RN1～n, one end of described thermo-sensitive resistor is connected with switch, and the other end is connected with the negative pole of described multi-section serial battery core；When described second bleeder circuit is multiple series resistance, one end of the plurality of series resistance provides circuit to be connected with power supply, and the other end is connected with the negative pole of described multi-section serial battery core.
In the more piece battery core system for detecting temperature that the embodiment of the present application is provided, owing to more piece battery core temperature sensing circuit is built-in by power drives, form two dividing potential drop branch roads, by switch time-sharing multiplex the first dividing potential drop branch road, second dividing potential drop branch road forms internal reference voltage, without providing power drives pin and reference voltage pin for each temperature sampling point, thus greatly reduce chip pin take quantity.
Embodiment three,
Fig. 4 shows the structural representation of temperature protection circuit in the embodiment of the present application three; as shown in the figure; described temperature protection circuit can include said temperature testing circuit, switch protecting circuit and be positioned at the logic control device of described integrated chip; the outfan of the plurality of comparator is all connected with described logic control device; the outfan of described logic control device is connected with described switch protecting circuit, and described switch protecting circuit is connected with the second end of the first end of described temperature collection circuit and described second bleeder circuit.
When being embodied as; the outfan of multiple comparators all can be connected with described logic control device Logic; the outfan of described logic control device Logic is connected with switch protecting circuit, and described switch protecting circuit is connected with the other end of the other end of described temperature collection circuit and described second bleeder circuit.Described logic control device Logic generates control signal according to the export structure of described comparator, and described switch protecting circuit disconnects corresponding loop according to described control signal, to reach the purpose of battery core protection.
When being embodied as, described logic control device Logic can also connect other test side OtherDet.
nullIn enforcement，Described switch protecting circuit specifically can include the first N-type metal-oxide semiconductor (MOS) (NMOS，N-Metal-Oxide-Semiconductor) transistor and the second nmos pass transistor，The grid of described first nmos pass transistor controls end as discharge prevention and is connected with the outfan of described logic control device，The grid of described second nmos pass transistor controls end as charge protection and is connected with the outfan of described logic control device，The drain electrode of described first nmos pass transistor is connected with the drain electrode of described second nmos pass transistor，The base stage of described first nmos pass transistor is connected with source electrode and is connected to the other end and the other end of described second bleeder circuit of described temperature collection circuit，The base stage of described second nmos pass transistor is connected with source electrode and is connected to the second external connection terminal.
When being embodied as, described first nmos pass transistor is referred to as discharge protection switch, and described second nmos pass transistor is referred to as charging protection switch.When the discharge prevention of described first nmos pass transistor controls the paradoxical discharge protection signal that termination receives logic control device output, described first nmos pass transistor disconnects discharge loop；When the charge protection of described second nmos pass transistor controls the abnormal charge protection signal that end receives logic control device output, described second nmos pass transistor disconnects charge circuit.
nullThe temperature protection circuit provided due to the embodiment of the present application，Power drives is built in integrated chip，In integrated chip, include that power supply provides circuit，Described power supply is provided the voltage of circuit output to carry out dividing potential drop by the first bleeder circuit and the second bleeder circuit respectively，Described power supply provides a branch (the i.e. first bleeder circuit) of circuit to be connected with external temperature collection circuit through ON-OFF control circuit，Described external temperature collection circuit only need to can obtain power supply by the first bleeder circuit described in ON-OFF control circuit time-sharing multiplex，Without providing external power supply to drive pin for each temperature sampling point，And，Described power supply provides another branch (the i.e. second bleeder circuit) of circuit can produce internal reference voltage，Without the reference voltage input pin extra for the offer of each temperature sampling point，Such that it is able to greatly reduce taking of chip pin.
Embodiment four,
Fig. 5 shows the structural representation of temperature protection system in the embodiment of the present application four; as shown in the figure; described temperature protection system can include the battery core of said temperature protection circuit and multi-section serial; wherein; described power supply provides the second end of circuit be connected with the positive pole of multi-section serial battery core and be connected to the first external connection terminal, and all negative poles with described multi-section serial battery core are connected the first end of described temperature collection circuit with the second end of described second bleeder circuit.
When being embodied as; the positive pole of described multi-section serial battery core can provide the voltage regulator LDO of circuit be connected and be connected to the first external connection terminal P+ with described power supply, and the negative pole of described multi-section serial battery core can be connected through switch protecting circuit and the second external connection terminal P-.
nullThe temperature protection system provided due to the embodiment of the present application，Power drives is built into integrated chip，In integrated chip, include that power supply provides circuit，Described power supply is provided the voltage of circuit output to carry out dividing potential drop by the first bleeder circuit and the second bleeder circuit respectively，Described power supply provides a branch (the i.e. first bleeder circuit) of circuit to be connected with external temperature collection circuit through ON-OFF control circuit，Described external temperature collection circuit only need to can obtain power supply by the first bleeder circuit described in ON-OFF control circuit time-sharing multiplex，Without providing external power supply to drive pin for each temperature sampling point，And，Described power supply provides another branch (the i.e. second bleeder circuit) of circuit can produce internal reference voltage，Without the reference voltage input pin extra for the offer of each temperature sampling point，Such that it is able to greatly reduce taking of chip pin.
Embodiment five,
The embodiment of the present application also proposed a kind of electronic equipment, can include apparatus body, charger and said temperature protection system.
When being embodied as, the electronic equipment that the embodiment of the present application is provided can be the various equipment needing discharge and recharge such as mobile phone, pad, panel computer, pocket lamp.
Embodiment six,
The application illustrates as a example by the temperature detection of three battery cores below.
Fig. 6 shows the concrete structure schematic diagram of many battery cores temperature protection system in the embodiment of the present application six; as shown in the figure; described many battery cores temperature protection system can include three economize on electricity core BATA1, BATA2, BATA3; each battery core is provided with a temperature sampling point; can there is corresponding thermo-sensitive resistor for detecting temperature; such as: RN1, RN2, RN3, each thermo-sensitive resistor is controlled the connection with integrated resistor R6, time-sharing multiplex R6 by switching K1, K2, K3；Described switch K1, K2, K3 are controlled by clock signal CK1, CK2, CK3 of OSC agitator respectively；Voltage regulator is connected with the positive pole of BATA3, it is divided into R6 and R1～5 two branch roads after producing internal low voltage LVDD, temperature detection end TSEN is all connected with the positive pole (positive input terminal) of comparator Cmp1, Cmp2, Cmp3, Cmp4, one end of R1, R2, R3, R4 is connected with the negative pole of Cmp1, Cmp2, Cmp3, Cmp4 respectively, outfan CT1, CT2, CT3, CT4 of Cmp1, Cmp2, Cmp3, Cmp4 are all connected with logic control device Logic, and the output of described Logic connects two nmos pass transistor MN3 respectively.
Assuming that thermo-sensitive resistor RN1, RN2, RN3 use negative temperature coefficient resister, the resistance of thermo-sensitive resistor can be followed shown in following table:
| T(℃) | R(Kohm) |
| 70 | 2.228 |
| 60 | 3.02 |
| 0 | 27.28 |
| -10 | 42.47 |
The resistance value of integrated resistor R6 of such as built-in chip type is set to 8Kohm, VR4 is set to (0.2178) LVDD, VR3 is set to (0.274) LVDD, VR2 is set to (0.7732) LVDD, VR1 is set to (0.8415) LVDD, and wherein LVDD is the magnitude of voltage of LDO output voltage LVDD node.
(1) when detected battery core temperature is less than-10 DEG C, the resistance value of external thermo-sensitive resistor should be higher than 42.47Kohm, TSEN voltage will be above (0.8415) LVDD, the i.e. TSEN voltage voltage higher than VR1, output signal CT1 of comparator Cmp1 is high level, and output signal CT2 of comparator Cmp2 is high level, and output signal CT3 of comparator Cmp3 is high level, output signal CT4 of comparator Cmp4 is high level, represents that detected battery core temperature is less than-10 DEG C；
(2) when detected battery core temperature is higher than-10 DEG C, but during less than 0 DEG C, the resistance value of external thermo-sensitive resistor should be less than 42.47Kohm and higher than 27.28Kohm, now TSEN voltage should be less than (0.8415) LVDD and higher than (0.7732) LVDD, i.e. less than VR1 and higher than VR2, relatively Cmp1 output signal CT1 is low level, output signal CT2 of comparator Cmp2 is high level, output signal CT3 of comparator Cmp3 is high level, and output signal CT4 of comparator Cmp4 is high level；
(3) when detected battery core temperature is higher than 0 DEG C, but during less than 60 DEG C, the resistance value of external thermo-sensitive resistor should be less than 27.28Kohm and higher than 3.02Kohm, now TSEN voltage should be less than (0.7732) LVDD and higher than (0.274) LVDD, i.e. less than VR2 and higher than VR3, relatively Cmp1 output signal CT1 is low level, output signal CT2 of comparator Cmp2 is low level, output signal CT3 of comparator Cmp3 is high level, and output signal CT4 of comparator Cmp4 is high level；
(4) when detected battery core temperature is higher than 60 DEG C, but during less than 70 DEG C, the resistance value of external thermo-sensitive resistor should be less than 3.02Kohm and higher than 2.228Kohm, now TSEN voltage should be less than (0.274) LVDD and higher than (0.2178) LVDD, i.e. less than VR3 and higher than VR4, relatively Cmp1 output signal CT1 is low level, output signal CT2 of comparator Cmp2 is low level, output signal CT3 of comparator Cmp3 is low level, and output signal CT4 of comparator Cmp4 is high level；
(5) when detected battery core temperature is higher than 70 DEG C, the resistance value of external thermo-sensitive resistor should be less than 2.228Kohm, now TSEN voltage should be less than (0.2178) LVDD, i.e. less than VR4, relatively Cmp1 output signal CT1 is low level, output signal CT2 of comparator Cmp2 is low level, and output signal CT3 of comparator Cmp3 is low level, and output signal CT4 of comparator Cmp4 is low level.
That is, when comparator Cmp1, Cmp2, Cmp3, Cmp4 is output as high level, high level, high level, high level, the battery core temperature representing detected is less than-10 DEG C；When being output as low level, high level, high level, high level, the battery core temperature representing detected higher than-10 DEG C but is less than 0 DEG C；When being output as low level, low level, high level, high level, the battery core temperature representing detected higher than 0 DEG C but is less than 60 DEG C；When being output as low level, low level, low level, high level, the battery core temperature representing detected higher than 60 DEG C but is less than 70 DEG C；When being output as low level, low level, low level, low level, the battery core temperature representing detected is higher than 70 DEG C.
Owing to the general deviation of the absolute value of chip-resistance is relatively big, such as +/-20%, the absolute value of R6 can be by being trimmed to exact value.R1～R5 is then without trimming, it is only necessary to relative value accurately, in integrated circuit technology, can realize the most high-precision relatively accurate by matched design.
In order to realize the effect of lower temperature coefficient, resistance R6 can use the second polysilicon layer (non-gate polysilicon layer) to do resistance material, then realize lower temperature coefficient by adjustment doping content, be shown experimentally that N+ doping is lower than the temperature coefficient coefficient of the polysilicon resistance of P+ doping.During enforcement, in order to obtain lower temperature coefficient, one photoetching can be increased and adjust the concentration of doping N+ specially, realize optimum efficiency.
Embodiment seven,
Fig. 7 shows the schematic flow sheet that in the embodiment of the present application seven, many battery cores temperature checking method is implemented, as it can be seen, described many battery cores temperature checking method may include steps of:
Step 701, utilize voltage regulator the cell voltage of multi-section serial battery core is adjusted to preset builtin voltage LVDD:
Step 702, utilize first group of resistance and second group of resistance that described default builtin voltage LVDD is carried out dividing potential drop；Described first group of resistance includes integrated resistor and the thermo-sensitive resistor of multiple parallel connection；
Step 703, the thermo-sensitive resistor of the plurality of parallel connection form temperature detection point voltage by integrated resistor described in switch time-sharing multiplex；Described second group of resistance includes multiple series resistance, and the plurality of series resistance produces internal reference voltage；
Step 704, comparator are by the size of timesharing more described temperature detection point voltage with described internal reference voltage, the temperature of detection more piece battery core.
Many battery cores temperature checking method that the embodiment of the present application is provided, owing to utilizing voltage regulator to produce a builtin voltage LVDD according to cell voltage, by built-in for power drives thus decrease the power drives pin quantity needed for each battery core, and by two groups of resistance to described builtin voltage LVDD dividing potential drop, one group is formed temperature detection point voltage by multiple thermo-sensitive resistor time-sharing multiplex integrated resistors in parallel, another group is produced internal reference voltage by series resistance, it is not necessary to provide external input reference voltage pin for each battery core；Owing to required chip exterior element only has thermo-sensitive resistor, required chip exterior number of elements is less.
Therefore, the many battery cores temperature checking method using the embodiment of the present application to be provided, take less chip pin and only need less chip exterior element, the purpose of many battery cores temperature detection can be realized.
Embodiment eight,
Fig. 8 shows the schematic flow sheet that in the embodiment of the present application eight, many battery cores temperature protecting method is implemented, as it can be seen, described many battery cores temperature protecting method may include steps of:
Step 801, utilize voltage regulator the cell voltage of multi-section serial battery core is adjusted to preset builtin voltage LVDD:
Step 802, utilize first group of resistance and second group of resistance that described default builtin voltage LVDD is carried out dividing potential drop；Described first group of resistance includes integrated resistor and the thermo-sensitive resistor of multiple parallel connection；
Step 803, the thermo-sensitive resistor of the plurality of parallel connection form temperature detection point voltage by integrated resistor described in switch time-sharing multiplex；Described second group of resistance includes multiple series resistance, and the plurality of series resistance produces internal reference voltage；
Step 804, comparator are by the size of timesharing more described temperature detection point voltage with described internal reference voltage, the temperature of detection more piece battery core；
Step 805, logic control device control signal to switch protecting circuit according to the testing result output abnormality of described comparator；
Step 806, the charge protection of described switch protecting circuit control end when receiving abnormal charging control signal, disconnect charge circuit, and the discharge prevention of described switch protecting circuit controls end when receiving paradoxical discharge control signal, disconnects discharge loop.
Many battery cores temperature protecting method that the embodiment of the present application is provided; owing to utilizing voltage regulator to produce a builtin voltage LVDD according to cell voltage; by built-in for power drives thus decrease the power drives pin quantity needed for each battery core; and by two groups of resistance to described builtin voltage LVDD dividing potential drop; one group is formed temperature detection point voltage by multiple thermo-sensitive resistor time-sharing multiplex integrated resistors in parallel; another group is produced internal reference voltage by series resistance, it is not necessary to provide external input reference voltage pin for each battery core；Owing to required chip exterior element only has thermo-sensitive resistor, required chip exterior number of elements is less.
Therefore, the many battery cores temperature protecting method using the embodiment of the present application to be provided, take less chip pin and only need less chip exterior element, the purpose of many battery cores temperature protection can be realized.
Although having been described for the preferred embodiment of the application, but those skilled in the art once know basic creative concept, then these embodiments can be made other change and amendment.So, claims are intended to be construed to include preferred embodiment and fall into all changes and the amendment of the application scope.
Claims (10)
1. a temperature sensing circuit, it is characterized in that, including: temperature collection circuit and integrated chip, described integrated chip includes ON-OFF control circuit, power supply provides circuit, first bleeder circuit, second bleeder circuit and comparison circuit, described temperature collection circuit is for carrying out temperature sampling to battery core to be measured, second end of described temperature collection circuit is connected with the first end of the first bleeder circuit through described ON-OFF control circuit, second end of described first bleeder circuit all provides the first end of circuit to be connected with described power supply with the first end of described second bleeder circuit, second end output internal reference voltage of described second bleeder circuit is connected with described comparison circuit, one end that described ON-OFF control circuit is connected with the first bleeder circuit is connected with described comparison circuit as temperature detection end.
2. temperature sensing circuit as claimed in claim 1, it is characterised in that described temperature collection circuit includes the multiple thermo-sensitive resistor RN for detecting battery core temperature to be measured1～RNn, described ON-OFF control circuit includes the switch K that multiple subject clock signal controls1～Kn, described first bleeder circuit includes integrated resistor, and the first end of each thermo-sensitive resistor is connected with earth terminal, and the second end of each thermo-sensitive resistor is connected with the first end of switch corresponding thereto as the second end of temperature collection circuit, multiple switch K1～KnThe second end be connected and be connected with the first end of described integrated resistor as temperature detection end TSEN, the first end of described integrated resistor is the first end of described first bleeder circuit.
3. temperature sensing circuit as claimed in claim 2, it is characterized in that, described integrated chip farther includes: agitator OSC, the switch that each subject clock signal controls is specially the corresponding clock signal produced by described agitator OSC and controls, a clock signal in the described agitator OSC the plurality of clock signal of loop control in predetermined period is in the first level, when this first level, corresponding switch conduction.
4. temperature sensing circuit as claimed in claim 2, it is characterized in that, described second bleeder circuit includes multiple series resistance, first end of first resistance of the plurality of series resistance provides circuit to be connected as the first end of described second bleeder circuit with described power supply, described comparison circuit includes the comparator of multiple parallel connection, described temperature detection end TSEN is connected with the first input end of described comparator, in addition to last resistance, the second end of the resistance of each series connection is connected with the second input of corresponding comparator respectively, second end of last resistance described is connected with the first end of described temperature collection circuit as the second end of described second bleeder circuit.
5. temperature sensing circuit as claimed in claim 1, it is characterized in that, described power supply provides circuit to be power supply and voltage regulator LDO, first end of described voltage regulator provides the first end of circuit to be connected with the first end of the second end of described first bleeder circuit, described second bleeder circuit as power supply, second end of described voltage regulator LDO is connected with described power supply, and described voltage regulator LDO is used for the voltage-regulation of described power supply as presetting builtin voltage.
6. temperature sensing circuit as claimed in claim 5, it is characterized in that, described power supply is battery core to be measured, second end of described voltage regulator LDO is connected with the positive pole of described battery core to be measured, and the negative pole of described battery core to be measured is connected with the second end of the first end of described temperature collection circuit, described second bleeder circuit.
7. temperature sensing circuit as claimed in claim 2, it is characterised in that the non-gate polysilicon layer that described integrated resistor specifically uses N+ to adulterate is resistance material, described N+ doping is specially the doping of the N+ after lithography process.
8. a temperature protection circuit; it is characterized in that; including temperature sensing circuit as claimed in claim 4, switch protecting circuit and the logic control device being positioned at described integrated chip; the outfan of the plurality of comparator is all connected with described logic control device; the outfan of described logic control device is connected with described switch protecting circuit, and described switch protecting circuit is connected with the second end of the first end of described temperature collection circuit and described second bleeder circuit.
9. temperature protection circuit as claimed in claim 8, it is characterized in that, described switch protecting circuit specifically includes the first N-type metal-oxide semiconductor (MOS) nmos pass transistor and the second nmos pass transistor, the grid of described first nmos pass transistor controls end as discharge prevention and is connected with the outfan of described logic control device, the grid of described second nmos pass transistor controls end as charge protection and is connected with the outfan of described logic control device, the drain electrode of described first nmos pass transistor is connected with the drain electrode of described second nmos pass transistor, the base stage of described first nmos pass transistor is connected with source electrode and is connected to the other end and the other end of described second bleeder circuit of described temperature collection circuit, the base stage of described second nmos pass transistor is connected with source electrode and is connected to the second external connection terminal.
10. a temperature protection system; it is characterized in that; including temperature protection circuit as claimed in claim 8 or 9 and the battery core of multi-section serial; wherein; described power supply provides the second end of circuit be connected with the positive pole of multi-section serial battery core and be connected to the first external connection terminal, and all negative poles with described multi-section serial battery core are connected the first end of described temperature collection circuit with the second end of described second bleeder circuit.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620330009.3U CN205724852U (en) | 2016-04-19 | 2016-04-19 | A kind of temperature detection, protection circuit and system |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620330009.3U CN205724852U (en) | 2016-04-19 | 2016-04-19 | A kind of temperature detection, protection circuit and system |
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| CN205724852U true CN205724852U (en) | 2016-11-23 |
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| CN201620330009.3U Withdrawn - After Issue CN205724852U (en) | 2016-04-19 | 2016-04-19 | A kind of temperature detection, protection circuit and system |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105826903A (en) * | 2016-04-19 | 2016-08-03 | 无锡中感微电子股份有限公司 | Temperature detection circuit, temperature protection circuit, temperature detection system and temperature protection system |
-
2016
- 2016-04-19 CN CN201620330009.3U patent/CN205724852U/en not_active Withdrawn - After Issue
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105826903A (en) * | 2016-04-19 | 2016-08-03 | 无锡中感微电子股份有限公司 | Temperature detection circuit, temperature protection circuit, temperature detection system and temperature protection system |
| CN105826903B (en) * | 2016-04-19 | 2018-10-12 | 无锡中感微电子股份有限公司 | A kind of temperature detection, protection circuit and system |
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