CN205692837U - A kind of TFT structure - Google Patents
A kind of TFT structure Download PDFInfo
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- CN205692837U CN205692837U CN201620250576.8U CN201620250576U CN205692837U CN 205692837 U CN205692837 U CN 205692837U CN 201620250576 U CN201620250576 U CN 201620250576U CN 205692837 U CN205692837 U CN 205692837U
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Abstract
This utility model provides a kind of TFT structure, relates to display field, including: source electrode, drain electrode, grid, and active area；Wherein said grid includes at least one bending segment, and be connected with described bending segment the first branch, the second branch, described first branch, described second branch lay respectively at the both sides of described bending segment bearing of trend.The TFT structure that this utility model provides is by bending gate metal, the gate metal that one section long is designed to curve-like, make it be contracted in the breadth length ratio improving transistor in a smaller semi-conducting material area, thus while improving transistor driving ability, save layout design space.
Description
Technical field
This utility model relates to display field, particularly relates to a kind of TFT structure design.
Background technology
At present, high-resolution display industry is widely used thin film transistor (TFT) (Thin Film Transistor, TFT) as face
The components and parts of drive circuit on plate.In large size along with display floater, the driving force for display floater requires the most more to come
The highest.In order to be able to increase the load capacity of drive circuit so that it is the viewing area of coupling large-size, often in peripheral drive
Circuit uses transistor that some breadth length ratios are bigger to increase output electric current, increases its load capacity.Currently use still
Be comparison original TFT design: linear type gate metal forms TFT by quasiconductor.
The active area regions inner grid length of TFT is i.e. TFT channel width, and the channel width of TFT has much, it is necessary to do
Go out the semiconductor active region of corresponding length.So, for the transistor that drive circuit breadth length ratio is the biggest, semiconductor active
The area that district accounts for can become very large, and so when design layout, the pipe of these bigger breadth length ratios often occupies one piece very
Big area, is unfavorable for the narrow frame of display floater, also can form obstruction for reaching higher definition.
Utility model content
Thus, this utility model aims to provide a kind of TFT structure, which substantially overcomes the limitation of prior art and lacks
One or more problem put and produce.
A purpose of the present utility model is to provide a kind of TFT structure, and it is designed by the structure improving TFT itself and improves
The driving force of TFT.
Another purpose of the present utility model is to provide a kind of TFT structure, and it makes the breadth length ratio of TFT at limited active area
Reach maximum in space.
Another purpose of the present utility model is to provide a kind of TFT structure, and it is by carrying out special knot to the grid of TFT
Structure design does not increase panel layout design difficulty while improving TFT driving force.
Other feature and advantage of the present utility model will be illustrated by the description that follows, and partly from this description
In it is clear that or teaching can be obtained by putting into practice this utility model.These purposes of the present utility model and other advantages
To realize by structure specifically noted in printed instructions and claims thereof and accompanying drawing and obtain.
In order to realize these and other advantage of the present utility model, according to the purpose of this utility model, as concrete at this
Change and broadly described, it is provided that a kind of TFT structure design, it includes source electrode, drain electrode, grid, and active area；Wherein grid bag
Include at least one bending segment, and the first branch of being connected with bending segment and the second branch, described first branch, described second point
Prop up the both sides laying respectively at described bending segment bearing of trend.
It should be understood that foregoing general description and specific descriptions below are all exemplary and explanatory, and its
Aim to provide and of the present utility model be explained further claimed.
Accompanying drawing explanation
Accompanying drawing provides and is further appreciated by of the present utility model and comprise in this application to constitute in this specification
A part, they explain embodiment of the present utility model and of the present utility model for explaining together with the description
Principle.
Fig. 1 is a kind of transistor design that existing design provides；
Figure 1A is the cross-sectional view that tangent line A1-A2 is truncated to along Fig. 1；
Fig. 2 is a kind of TFT design that this utility model provides；
Fig. 2 A is that the grid 130 shown in Fig. 1 designs；
Fig. 2 B is that the grid 230 shown in Fig. 2 designs；
Fig. 3 is the another TFT structure schematic diagram that this utility model provides；
Fig. 4 is the another TFT structure schematic diagram that this utility model provides；
Fig. 5 is the another TFT structure schematic diagram that this utility model provides；
Fig. 6 is the buffer design of application any one TFT structure as above.
Detailed description of the invention
It is understood that specific embodiment described herein is used only for explaining, rather than to limit of the present utility model
Fixed.It also should be noted that, for the ease of describing, accompanying drawing illustrate only the part relevant to this utility model.
It should be noted that in the case of not conflicting, the embodiment in this utility model and the feature in embodiment can
To be mutually combined.Describe this utility model below with reference to the accompanying drawings and in conjunction with the embodiments in detail.
Fig. 1 is a kind of transistor design that existing design provides, and Figure 1A is the section knot that tangent line A1-A2 is truncated to along Fig. 1
Structure schematic diagram.In conjunction with Fig. 1 and Figure 1A, transistor 100 includes source electrode 110, drain electrode 120, grid 130, and active area 140.Source
Pole 110 is connected with one end of active area 140 by via 111, and drain electrode 120 is by the other end phase of via 121 with active area 140
Even.When voltage difference Vgs between grid 130 and source electrode 110 reaches cut-in voltage (Vth), between source electrode 110 and drain electrode 120
Forming conducting channel, the width of conducting channel is equal to the length of grid, and the length of raceway groove is equal to the width of grid.Specifically, right
Answering the transistor 100 shown in Fig. 1, the width of raceway groove is equal to length L01 of grid, and the length of raceway groove is equal to the width L02 of grid.
When voltage difference Vgs between grid 130 and source electrode 110 is to determine value more than one of cut-in voltage (Vth), if now in leakage
Adding forward voltage between pole 120 and source electrode 110, then will produce certain drain current, TFT100 turns on.Conducting channel simultaneously
Width is the biggest with length ratio, and the drain current of transistor is the biggest, and the driving force of transistor is the strongest.
Fig. 2 is a kind of TFT design that the present embodiment provides.As in figure 2 it is shown, the transistor 200 that the present embodiment provides includes
Source electrode 210, drain electrode 220, grid 230, and by the active area 240 between source electrode 210 and drain electrode 220.Wherein, source electrode
210 are connected with one end of active area 240 by via 211, and drain electrode 220 is by the other end phase of via 221 with active area 240
Even.When voltage difference Vgs between grid 230 and source electrode 210 reaches cut-in voltage (Vth), between source electrode 210 and drain electrode 220
Form conducting channel.Voltage difference Vgs between grid 230 and source electrode 210 is to determine value more than one of cut-in voltage (Vth)
Time, if now adding forward voltage between drain electrode 220 and source electrode 210, then producing certain drain current, TFT200 turns on.
It should be noted that source electrode, drain electrode and the transistor of prior art offer in Fig. 1 in the transistor 200 of the present embodiment offer
Source electrode, the structure of drain electrode, size and material in 100 are identical, and following analysis is all built upon grid width
Carrying out in the case of L02 is constant, discussing on the premise of i.e. keeping the channel length of transistor constant increases transistor breadth length ratio
Improvement project.Hinge structure, the grid 230 of the transistor 200 that the present embodiment provides includes a bending segment 232, with
And and the first branch 234 and the second branch 236 of bending segment 232 connection, wherein the first branch 234 and the second branch 236 difference
It is positioned at the both sides of bending segment 232.Specifically, as in figure 2 it is shown, the first branch 234 is positioned at the X1 side of bending segment 232, the second branch
The 236 X2 sides being positioned at bending segment 232.
As it has been described above, for the driving force improving transistor, can be realized by the breadth length ratio increasing raceway groove.Fig. 2 A
With the advantage that Fig. 2 B further illustrates the transistor design hinge structure that the present embodiment provides by way of example, wherein, figure
2A is that the grid 130 shown in Fig. 1 designs, and Fig. 2 B is that the grid 230 shown in Fig. 2 designs.Assume that transistor is NMOS tube, in order to carry
The driving force of high TFT, the breadth length ratio of transistor channel needs to increase to 200/5 from 120/5.
When using the transistor design mode shown in Fig. 1, when transistor 100 works, electronics 101 passes to source from drain electrode 120
Pole 110, electronics 101 propagation path is as shown in D0 in Fig. 1, and effective channel width of transistor 100 is the length of grid 130
L01.Therefore, in order to improve effective channel width of transistor 100, need length L01 of grid 130 is extended L01 ' further
Length the breadth length ratio of grid 130 just can be made to increase to 200/5 from 120/5.Because only that the gate portion corresponding with active area 140
Divide and be only truly effective grid, therefore, when grid 130 extends further, the active area 140 of corresponding grid 130
Be also required to extend further, i.e. the length of active area 140 extends to L0 from L01, when n transistor 100 as shown in Figure 1 is connected
Time in display floater, active area 140 will increase the length of n*L01 ', and this not only increases the area of active area 140, the most not
It is beneficial to the narrow limitization design of panel.
And when using the transistor design mode shown in Fig. 2, when transistor 200 works, electronics 201 passes to from drain electrode 220
Source electrode 210, electronics 201 propagation path is as shown in D1, D2, D3 in figure: electronics 201 sends from 220 ends that drain, can be from each side
Source electrode is arrived to through raceway groove.The active path that after bending due to grid 230, electronics 201 can pass through is increased, transistor
Effective channel width of 200 substantially becomes big.The active path that electronics 201 can pass through is equal to the length of grid 230, such as Fig. 2 B institute
Showing, the length of grid 230 is equal to length L234 of the first branch 234, length L232 of bending segment 232, the length of the second branch 236
Degree L236 three's sum.Simultaneously it can be seen that the length sum of the first branch 234 and the second branch 236 is equal to figure from Fig. 2 B
Length L01 of the grid 130 shown in 2A, and length L232 of bending segment 232 is equal to the L01 ' in Fig. 2 A.I.e. when to grid 230
When carrying out bending design, grid 230 can increase the length of grid 230 on the premise of not extending active area 240, thus improve
The breadth length ratio of grid 230.Understanding in other words, in Fig. 2 A, the prolongation L01 ' of grid 130 has been arrived the bending in Fig. 2 B by equivalence
Section 232.Therefore, the transistor design shown in Fig. 2 can need not extend active area 240 can increase effective biography of electronics 201
Broadcast path, increase the channel width-over-length ratio of transistor 200.When n transistor 200 as shown in Figure 2 is connected in display floater
The length of n*L232 can be saved.Therefore, the transistor design that the present embodiment provides can improve breadth length ratio and be beneficial to again display floater
Narrow limitization design.
As seen through the above analysis, the TFT gate that this utility model provides takes bending to be designed to increase raceway groove
Breadth length ratio, improve TFT driving force.Meanwhile, the number of times that can release grid bending is the most, and channel width-over-length ratio is the biggest, TFT
Driving force the strongest.
Fig. 3 is the another TFT structure schematic diagram that this utility model provides.Transistor 300 and Fig. 2 institute that the present embodiment provides
Showing that the difference of transistor 200 is, transistor 300 includes 2 bending segments.As it is shown on figure 3, transistor 300 include source electrode 310,
Drain electrode 320, grid 330, and active area 340；Grid 330 includes bending segment 3321, bending segment 3322, with bending segment 3321 even
The first branch 3341 and the second branch 3361 connect, and the first branch 3342 and the second branch being connected with bending segment 3322
3361, bending segment 3321 and bending segment 3322 share the second branch 3361, form " recessed " shape.
In the present embodiment, length L01 of source electrode 310, drain electrode 320 and active area 340 is corresponding with Fig. 1 and Fig. 2 to be tied
Structure design keeps consistent.From figure 3, it can be seen that the grid 230 in Fig. 2 relatively, grid 330 adds a bending segment 332, because of
This, the length of grid 330 further increases length L332 of a bending segment on the basis of Fig. 2 grid 230.Therefore compare
Transistor 200, the breadth length ratio of transistor 300 further increases L332/L01.
Fig. 4 is the another TFT structure schematic diagram that this utility model provides.Transistor 400 and Fig. 3 institute that the present embodiment provides
Showing that the difference of transistor 300 is, transistor 400 includes n bending segment 432 and be connected multiple first with bending segment 432
Branch 434 and multiple second branch 436.As shown in Figure 4, transistor 400 includes source electrode 410, drain electrode 420, grid 430, and
Active area 440；Wherein grid 430 includes bending segment 432, and the first branch 434 and the second branch being connected with bending segment 432
436, adjacent two bending segments 432 share first branch 434 (as in Fig. 4, two bending segments 432 in right side share one first
Branch 434), or share second branch 436.Bending segment 432 and first the 434, second branch 436 of branch are formed and alternately divide
" recessed " shape of cloth and " convex " shape.
In the present embodiment, length L01 of source electrode 410, drain electrode 420 and active area 440 designs with aforementioned corresponding structure
Keep consistent.From fig. 4, it can be seen that the grid 330 in Fig. 3 relatively, grid 430 adds (n-2) individual bending segment 432, grid
The length of 430 further increases length L432 of (n-2) individual bending segment on the basis of Fig. 3 grid 330.Therefore crystal is compared
Pipe 300, the breadth length ratio of transistor 400 further increases (n-2) * L432/L01.
Embodiment as shown in Figure 2, Figure 3, Figure 4, wherein, the angle of bending segment and the first branch, the second branch is all straight
Angle, easily causes electrostatic problem due to right angle, and therefore, this utility model is keeping the premise that the application central inventive point is constant
Under, propose to improve embodiment for the embodiment shown in Fig. 2, Fig. 3, Fig. 4.
Fig. 5 is the another TFT structure schematic diagram that this utility model provides.In view of the problem of antistatic, the present embodiment carries
The transistor 500 of confession is with the difference of transistor shown in Fig. 2, Fig. 3, Fig. 4, the bending segment 532 of transistor 500 and the first branch
534, obtuse angle is formed between the second branch 536.So design is advantageous in that, the direction of motion phase of the direction of electrostatic force and electric charge
Instead, it is easy to electric charge discharges, it is to avoid gathering of electrostatic charge produces damage of electrostatic discharge transistor.Similarly, in the present embodiment, brilliant
Circular sliding slopes can also be passed through, it is to avoid electrostatic electricity between bending segment 532 and first 534, second branch 536 of branch of body pipe 500
Gathering of lotus produces damage of electrostatic discharge transistor.
Fig. 6 is the buffer design of application any one TFT structure as above.As shown in Figure 6, buffer 600 by
Three phase inverters (601,602,603) are formed by connecting, and each phase inverter is made up of a P pipe and a N pipe, these three phase inverter
Breadth length ratio one-level bigger than one-level, it is ensured that last output current ratio is relatively big, strengthens carrying load ability.In reality, Fig. 6 makes
Afterbody phase inverter 603 breadth length ratio can exceed several times than first order phase inverter 601 breadth length ratio, by using this practicality new
The transistor design that type provides: bend its grid metal lines at tube interior, identical lengthwise semiconductor correspondence can be reached bigger
Channel width, strengthen transistor breadth length ratio, increase buffer driving force.
It should be noted that in all embodiments that above this utility model provides, the material of active area be non-crystalline silicon,
One in low temperature polycrystalline silicon and indium gallium zinc oxide, this is not construed as limiting by this utility model.
In sum, the gate metal that a section long, by bending gate metal, is designed to curve by this utility model
Shape so that it is be contracted in the breadth length ratio improving transistor in a smaller semi-conducting material area, improves transistor driving
Domain space is saved while ability.
It should be noted that above are only preferred embodiment of the present utility model and institute's application technology principle.This area skill
Art personnel, it will be appreciated that this utility model is not limited to specific embodiment described here, can enter for a person skilled in the art
Row various obvious changes, readjust and substitute without departing from protection domain of the present utility model.Therefore, although by with
This utility model is described in further detail by upper embodiment, but this utility model is not limited only to above example,
In the case of conceiving without departing from this utility model, it is also possible to include other Equivalent embodiments more, and model of the present utility model
Enclose and determined by scope of the appended claims.
Claims (8)
1. a TFT structure, described TFT structure includes source electrode, drain electrode, grid, and active area；Wherein said grid include to
A few bending segment, and be connected with described bending segment the first branch, the second branch, described first branch, described second point
Prop up the both sides laying respectively at described bending segment bearing of trend.
2. TFT structure as claimed in claim 1, it is characterised in that adjacent two described bending segments share described first
Branch, or share described second branch.
3. TFT structure as claimed in claim 2, it is characterised in that described bending segment and described first branch, described second point
Prop up and form alternatively distributed " recessed " shape and " convex " shape.
4. TFT structure as claimed in claim 1, it is characterised in that described bending segment and described first branch, described second point
The angle propped up is right angle.
5. TFT structure as claimed in claim 1, it is characterised in that described bending segment and described first branch, described second point
The angle propped up is obtuse angle.
6. TFT structure as claimed in claim 1, it is characterised in that described bending segment and described first branch, described second point
Prop up and pass through circular sliding slopes.
7. TFT structure as claimed in claim 1, it is characterised in that described grid described active area throwing planar
Shadow area is less than the area of described active area.
8. TFT structure as claimed in claim 1, it is characterised in that the material of described active area is non-crystalline silicon, low temperature polycrystalline silicon
With the one in indium gallium zinc oxide.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620250576.8U CN205692837U (en) | 2016-03-29 | 2016-03-29 | A kind of TFT structure |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201620250576.8U CN205692837U (en) | 2016-03-29 | 2016-03-29 | A kind of TFT structure |
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| CN205692837U true CN205692837U (en) | 2016-11-16 |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107121865A (en) * | 2017-06-07 | 2017-09-01 | 深圳市华星光电技术有限公司 | A kind of thin film transistor (TFT), TFT substrate and display panel |
| CN107437400A (en) * | 2017-09-04 | 2017-12-05 | 上海天马有机发光显示技术有限公司 | Display panel and display device |
| US10509279B2 (en) | 2017-06-07 | 2019-12-17 | Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd | Thin film transistor, TFT substrate, and display panel having source eletrodes and gate electrodes comprising U-shape structures |
-
2016
- 2016-03-29 CN CN201620250576.8U patent/CN205692837U/en active Active
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107121865A (en) * | 2017-06-07 | 2017-09-01 | 深圳市华星光电技术有限公司 | A kind of thin film transistor (TFT), TFT substrate and display panel |
| US10509279B2 (en) | 2017-06-07 | 2019-12-17 | Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd | Thin film transistor, TFT substrate, and display panel having source eletrodes and gate electrodes comprising U-shape structures |
| CN107437400A (en) * | 2017-09-04 | 2017-12-05 | 上海天马有机发光显示技术有限公司 | Display panel and display device |
| US10380938B2 (en) | 2017-09-04 | 2019-08-13 | Shanghai Tianma AM-OLED Co., Ltd. | Bendable display panel and display device |
| CN107437400B (en) * | 2017-09-04 | 2020-08-07 | 上海天马有机发光显示技术有限公司 | Display panel and display device |
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Effective date of registration: 20211027 Address after: No.8, liufangyuan Henglu, Donghu New Technology Development Zone, Wuhan City, Hubei Province Patentee after: WUHAN TIANMA MICRO-ELECTRONICS Co.,Ltd. Patentee after: Wuhan Tianma Microelectronics Co.,Ltd. Shanghai Branch Patentee after: Tianma Micro-Electronics Co.,Ltd. Address before: Room 509, building 1, No. 6111, Longdong Avenue, Pudong New Area, Shanghai, 200120 Patentee before: SHANGHAI TIANMA AM-OLED Co.,Ltd. Patentee before: Tianma Micro-Electronics Co.,Ltd. |