CN105242463B - Liquid crystal display device - Google Patents
Liquid crystal display device Download PDFInfo
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- CN105242463B CN105242463B CN201510737898.5A CN201510737898A CN105242463B CN 105242463 B CN105242463 B CN 105242463B CN 201510737898 A CN201510737898 A CN 201510737898A CN 105242463 B CN105242463 B CN 105242463B
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- liang
- branches
- source electrode
- data line
- liquid crystal
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
- G02F1/134309—Electrodes characterised by their geometrical arrangement
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136286—Wiring, e.g. gate line, drain line
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- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Geometry (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Liquid Crystal (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Abstract
The embodiment of the present invention discloses a kind of liquid crystal display device, including scan line, the data line that intersects with scan line and the pixel unit by scan line and data line common definition.Pixel unit includes thin film transistor (TFT) and pixel electrode.Thin film transistor (TFT) includes grid, source electrode and drain electrode.Data line includes the spaced Liang Ge branches for forming gap.Source electrode includes Liang Ge branches.Each branch of source electrode connect with one of data line branch, the spaced formation gap of Liang Ge branches of source electrode.Grid connects scan line.One end of drain electrode connects pixel electrode, and the one end far from pixel electrode that drains is located in the gap of Liang Ge branches formation of source electrode, and the gap that the Liang Ge branches of data-oriented line are formed.In the present invention, " air exercise " phenomenon will not be formed between drain electrode and source electrode, the display quality of liquid crystal display device therefore can be improved to can avoid the generation Electro-static Driven Comb (ESD) in the raceway groove of thin film transistor (TFT).
Description
Technical field
The present invention relates to display field, more particularly to a kind of liquid crystal display device.
Background technology
Liquid crystal display device because have many advantages, such as wide viewing angle, high brightness, high contrast, low energy consumption, volume is frivolous due to obtain
It is widely applied.Referring to Fig. 1, Fig. 1 is the dot structure schematic diagram of the liquid crystal display device of the prior art.Liquid crystal display device
Including scan line 11, the data line intersected with scan line 11 12 and the pixel unit defined by scan line 11 and data line 12.
Pixel unit includes thin film transistor (TFT) 13 and pixel electrode 14.Thin film transistor (TFT) 13 includes source electrode 131, grid 132 and drain electrode
133.Source electrode 131 is connect via a branch 121 of data line 12 with data line 12, and grid 132 connects scan line 11, drain electrode
133 one end connects pixel electrode 14.The substantially half-circle-arc shape of source electrode 131,133 one end far from pixel electrode 14 of drain electrode are stretched
Enter semicircular arc at space in.In this structure of the prior art, due to drain electrode 133 one end stretch into semicircular arc at sky
In, there can be " air exercise " phenomenon between source electrode 131 and drain electrode 133, to which electrostatic easily occur in the raceway groove of thin film transistor (TFT)
It discharges (ESD), influences the display quality of liquid crystal display device.
Invention content
The embodiment of the present invention provides a kind of liquid crystal display device, the hair of Electro-static Driven Comb in the raceway groove to reduce thin film transistor (TFT)
Raw rate, improves the display quality of liquid crystal display device.
The embodiment of the present invention provides a kind of liquid crystal display device, including scan line, the data line that intersects with the scan line
With the pixel unit by the scan line and data line common definition, the pixel unit includes thin film transistor (TFT) and pixel electricity
Pole, the thin film transistor (TFT) include grid, source electrode and drain electrode, and the data line includes spaced form gap two points
Branch, the source electrode includes Liang Ge branches, and each branch of the source electrode connect with one of data line branch, described
The spaced formation gap of Liang Ge branches of source electrode, the grid connect the scan line, described in one end connection of the drain electrode
Pixel electrode, the described one end of drain electrode far from the pixel electrode are located in the gap of Liang Ge branches formation of the source electrode, and
The gap that Liang Ge branches towards the data line are formed.
In one embodiment, the Liang Ge branches of the source electrode extend in the opposite direction.
In one embodiment, the Liang Ge branches of the source electrode extend towards opposite direction.
In one embodiment, the Liang Ge branches of the data line are parallel with the scan line respectively.
In one embodiment, the Liang Ge branches of the data line extend towards opposite direction.
In one embodiment, each branch includes first part and second part in the Liang Ge branches of the data line,
The first part is parallel with the scan line, and the second part is vertically connected at the first part, and the two of the source electrode
Each branch connect with one of second part in a branch, and the described one end of drain electrode far from the pixel electrode is towards described
The gap that two second parts of the Liang Ge branches of data line are formed.
In one embodiment, the grid is formed by widened portion of the scan line in the pixel unit.
In one embodiment, the source electrode and drain electrode is set on the grid.
In embodiment disclosed by the invention, the one end far from pixel electrode that drains is located between the Liang Ge branches formation of source electrode
In gap, and the gap that the Liang Ge branches of data-oriented line are formed.Therefore, " air exercise " phenomenon will not be formed between drain electrode and source electrode,
The display of liquid crystal display device therefore can be improved to can avoid the generation Electro-static Driven Comb (ESD) in the raceway groove of thin film transistor (TFT)
Quality.
Description of the drawings
It to describe the technical solutions in the embodiments of the present invention more clearly, below will be to needed in the embodiment
Attached drawing is briefly described, it should be apparent that, drawings in the following description are only some embodiments of the invention, for ability
For the those of ordinary skill of domain, without creative efforts, it can also be obtained according to these attached drawings other attached
Figure.
Fig. 1 is a kind of schematic diagram of the dot structure of liquid crystal display device in the prior art；
Fig. 2 is the schematic diagram of the dot structure of liquid crystal display device in first embodiment of the invention；
Fig. 3 is the schematic diagram of the dot structure of liquid crystal display device in second embodiment of the invention；
Fig. 4 is the schematic diagram of the dot structure of liquid crystal display device in third embodiment of the invention；And
Fig. 5 is the schematic diagram of the dot structure of liquid crystal display device in four embodiment of the invention.
Specific implementation mode
Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention carries out clear, complete
Site preparation describes, it is clear that described embodiment is only a part of the embodiment of the present invention, instead of all the embodiments.Based on this
Embodiment in invention, every other reality obtained by those of ordinary skill in the art without making creative efforts
Example is applied, shall fall within the protection scope of the present invention.
Fig. 2 is the schematic diagram of the dot structure of the liquid crystal display device of first embodiment of the invention.Liquid crystal display device
Including scan line 21, the data line intersected with scan line 21 22 and pixel list by 22 common definition of scan line 21 and data line
Member.Pixel unit includes thin film transistor (TFT) 23 and pixel electrode 24.Thin film transistor (TFT) 23 includes source electrode 231, grid 232 and drain electrode
233。
In the present embodiment, data line 22 includes the Liang Ge branch 221 parallel with scan line 21.221 phase of Liang Ge branches
Mutually interval forms gap.Source electrode 231 includes Liang Ge branches, branch of one of each branch of source electrode 231 and data line 22
221 connections.The spaced formation gap of Liang Ge branches of source electrode 231.In the present embodiment, the court of Liang Ge branches of source electrode 231
Opposite is oppositely extending.One end of drain electrode 233 connects pixel electrode 24, and the other end is located at the Liang Ge branches formation of source electrode 231
In gap, and the gap that the Liang Ge branches 221 of data-oriented line 22 are formed.
In the present embodiment, grid 232 is formed by widened portion of the scan line 21 in pixel unit.231 He of source electrode
Drain electrode 233 is set on grid 232.
In present embodiment, 233 one end far from pixel electrode 24 of drain electrode are located between the Liang Ge branches formation of source electrode 231
In gap, and the gap that the Liang Ge branches 221 of data-oriented line 22 are formed.Therefore, it will not be formed between drain electrode 233 and source electrode 231
Therefore to can avoid the generation Electro-static Driven Comb (ESD) in the raceway groove of thin film transistor (TFT) 23 liquid crystal can be improved in " air exercise " phenomenon
The display quality of display device.
Fig. 3 is the schematic diagram of the dot structure of liquid crystal display device in second embodiment of the invention.Liquid crystal display device
Including scan line 31, the data line intersected with scan line 31 32 and pixel list by 32 common definition of scan line 31 and data line
Member.Pixel unit includes thin film transistor (TFT) 33 and pixel electrode 34.Thin film transistor (TFT) 33 includes source electrode 331, grid 332 and drain electrode
333.The difference is that, in present embodiment, the Liang Ge branches of source electrode 331 prolong towards opposite direction with first embodiment
It stretches and forms gap.In present embodiment, 333 one end far from pixel electrode 34 of drain electrode are located at two branch shapes of source electrode 231
At gap in, and data-oriented line 32 Liang Ge branches 321 formed gap.
Fig. 4 is the schematic diagram of the dot structure of liquid crystal display device in third embodiment of the invention.Liquid crystal display device
Including scan line 41, the data line intersected with scan line 41 42 and pixel list by 42 common definition of scan line 41 and data line
Member.Pixel unit includes thin film transistor (TFT) 43 and pixel electrode 44.Thin film transistor (TFT) 43 includes source electrode 431, grid 432 and drain electrode
433.The difference is that, in present embodiment, the Liang Ge branches 421 of data line 42 are towards opposite side with first embodiment
To extending and form gap.In present embodiment, 433 one end far from pixel electrode 44 of drain electrode are located at two points of source electrode 431
In the gap that branch is formed, and the gap that the Liang Ge branches 421 of data-oriented line 42 are formed.
Fig. 5 is the schematic diagram of the dot structure of liquid crystal display device in four embodiment of the invention.Liquid crystal display device
Including scan line 51, the data line intersected with scan line 51 52 and pixel list by 52 common definition of scan line 51 and data line
Member.Pixel unit includes thin film transistor (TFT) 53 and pixel electrode 54.Thin film transistor (TFT) 53 includes source electrode 531, grid 532 and drain electrode
533.With first embodiment the difference is that, in present embodiment, each branch in the Liang Ge branches 521 of data line 52
521 include first part and second part, and first part is parallel with scan line 51, and second part is vertically connected at first
Point.Each branch connect with one of second part in the Liang Ge branches of source electrode 531, and the Liang Ge branches of source electrode 531 are towards phase
Anti- direction extends.533 one end far from pixel electrode 54 of drain electrode are parallel with data line 52, are located at the Liang Ge branches of source electrode 531
In the gap of formation, and the gap that two second parts of the Liang Ge branches 331 of data-oriented line 32 are formed.
The above is the preferred embodiment of the present invention, it is noted that for those skilled in the art
For, various improvements and modifications may be made without departing from the principle of the present invention, these improvements and modifications are also considered as
Protection scope of the present invention.
Claims (8)
1. a kind of liquid crystal display device, including scan line, the data line that intersects with the scan line and by the scan line sum number
According to the pixel unit of line common definition, the pixel unit includes thin film transistor (TFT) and pixel electrode, the thin film transistor (TFT) packet
Include grid, source electrode and drain electrode, which is characterized in that the data line includes the spaced Liang Ge branches for forming gap, the source
Pole includes and one-to-one Liang Ge branches of the Liang Ge branches of the data line, each branch and the data line of the source electrode
In corresponding branch connection with its, the spaced formation gap of Liang Ge branches of the source electrode, described in the grid connection
One end of scan line, the drain electrode connects the pixel electrode, and the described one end of drain electrode far from the pixel electrode is located at described
The gap that Liang Ge branches in the gap that the Liang Ge branches of source electrode are formed, and towards the data line are formed.
2. liquid crystal display device as described in claim 1, which is characterized in that the Liang Ge branches of the source electrode are in the opposite direction
Extend.
3. liquid crystal display device as described in claim 1, which is characterized in that the Liang Ge branches of the source electrode are towards opposite direction
Extend.
4. liquid crystal display device as described in claim 1, which is characterized in that the Liang Ge branches of the data line respectively with it is described
Scan line is parallel.
5. liquid crystal display device as described in claim 1, which is characterized in that the Liang Ge branches of the data line are towards opposite side
To extension.
6. liquid crystal display device as described in claim 1, which is characterized in that each branch in the Liang Ge branches of the data line
Including first part and second part, the first part is parallel with the scan line, and the second part is vertically connected at institute
State first part, in the Liang Ge branches of the source electrode each branch in the data line with its corresponding branch second
Part connects, two second parts of one end Liang Ge branch towards the data line of the drain electrode far from the pixel electrode
The gap of formation.
7. the liquid crystal display device as described in claim 1 to 6 any one, which is characterized in that the grid is by the scanning
Widened portion of the line in the pixel unit is formed.
8. the liquid crystal display device as described in claim 1 to 6 any one, which is characterized in that the source electrode and drain electrode setting
In on the grid.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510737898.5A CN105242463B (en) | 2015-11-03 | 2015-11-03 | Liquid crystal display device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510737898.5A CN105242463B (en) | 2015-11-03 | 2015-11-03 | Liquid crystal display device |
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| Publication Number | Publication Date |
|---|---|
| CN105242463A CN105242463A (en) | 2016-01-13 |
| CN105242463B true CN105242463B (en) | 2018-10-19 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510737898.5A Active CN105242463B (en) | 2015-11-03 | 2015-11-03 | Liquid crystal display device |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11846857B2 (en) * | 2021-01-07 | 2023-12-19 | Tcl China Star Optoelectronics Technology Co., Ltd. | Array substrate and display panel |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI237892B (en) * | 2004-01-13 | 2005-08-11 | Ind Tech Res Inst | Method of forming thin-film transistor devices with electro-static discharge protection |
| US20070246778A1 (en) * | 2006-04-21 | 2007-10-25 | Meng-Chi Liou | Electrostatic discharge panel protection structure |
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2015
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Patent Citations (7)
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|---|---|---|---|---|
| TW200410415A (en) * | 2002-12-03 | 2004-06-16 | Quanta Display Inc | Method of fabricating thin film transistor array |
| CN1664984A (en) * | 2004-03-04 | 2005-09-07 | 统宝光电股份有限公司 | Method and apparatus for manufacturing thin film transistor array |
| CN201845768U (en) * | 2010-03-30 | 2011-05-25 | 深圳华映显示科技有限公司 | Electrostatic discharge protection structure |
| CN102945829A (en) * | 2012-11-23 | 2013-02-27 | 京东方科技集团股份有限公司 | Array substrate, manufacture method thereof and display device including array substrate |
| CN102983102A (en) * | 2012-12-04 | 2013-03-20 | 京东方科技集团股份有限公司 | Array substrate and manufacturing method thereof, as well as display device |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11846857B2 (en) * | 2021-01-07 | 2023-12-19 | Tcl China Star Optoelectronics Technology Co., Ltd. | Array substrate and display panel |
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| CN105242463A (en) | 2016-01-13 |
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