CN201845768U - Electrostatic discharge protection structure - Google Patents
Electrostatic discharge protection structure Download PDFInfo
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- CN201845768U CN201845768U CN2010201497818U CN201020149781U CN201845768U CN 201845768 U CN201845768 U CN 201845768U CN 2010201497818 U CN2010201497818 U CN 2010201497818U CN 201020149781 U CN201020149781 U CN 201020149781U CN 201845768 U CN201845768 U CN 201845768U
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Abstract
The utility model discloses an electrostatic discharge protection structure. The electrostatic discharge protection structure comprises a virtual thin film transistor. The source electrode and the drain electrode of the virtual thin film transistor are set in at least one of the following manners: the source electrode and the drain electrode are set into a bar structure without a nose wing, at least one protruding pattern is respectively arranged on the source electrode and the drain electrode, or the channel of the virtual thin film transistor is shorter than the channel of a normal thin film transistor in pixels. Therefore, the electrostatic discharge protection structure is favorable for releasing electrostatic charges.
Description
Technical field
The utility model relates to a kind of display floater, particularly relevant for a kind of display floater with electrostatic discharge protection structure.
Background technology
Along with the progress of optics science and technology with semiconductor technology, display panels has been widely used on the electronic product display floater.Advantages such as LCD has that high image quality, volume are little, in light weight, low voltage drive, low consumpting power and applied range, it has replaced the mainstream technology that traditional cathode ray tube becomes display.
Generally speaking, liquid crystal indicator comprises active component array base board, colored optical filtering substrates and liquid crystal layer, wherein active component array base board is and the assembling of colored optical filtering substrates subtend, and liquid crystal layer is between active component array base board and colored optical filtering substrates.By the sensing of the liquid crystal molecule of each active member modulation liquid crystal layer in the active component array base board, can adjust beam intensity to demonstrate image.
Yet, in the process of making liquid crystal indicator, no matter be that manufacturing equipment, operating personnel and active component array base board itself all may be accumulated many electrostatic charges.Therefore, when active component array base board touches manufacturing equipment, operating personnel or other object in manufacture process, may cause static discharge (Electro-Static Discharge; ESD) phenomenon.Because circuit and element on the active component array base board are all very fine, therefore, be easy to produce scrapping of liquid crystal indicator as long as there is the phenomenon of static discharge to produce slightly.For solving the problem that the static discharge phenomenon causes liquid crystal indicator to damage, generally can on active component array base board, design ESD protection circuit.
Moreover, owing to the demand of display panels, select the glass substrate of insulating property (properties) for use, the buildup of static electricity amount that causes producing in manufacturing process can't be eliminated, thereby cause easily and cause the problem of static discharge element impaired, and significantly reduce the yield of LCD.
In addition, in the thin-film transistor manufacturing process, some processing environments also can produce the accumulation of static, for example: the relevant processing procedure of electricity such as chemical vapor deposition (CVD), sputter or dry-etching slurry.In addition, in the process of processing procedure conversion or board transport, also have the generation of static electricity that comes from the external world.Because the glass substrate of insulation can't be about to buildup of static electricity certainly and be eliminated, therefore the conductor part on element and panel will form a tangible potential difference.In case the generation static discharge, the reliability that high voltage that moment produces or high electric current will cause element and circuit reduces, or even the permanent damage of element and circuit.
Therefore, the Electrostatic protection or the improvement of electrostatic breakdown problem all are protection structure and the important topic that promotes the product yield.Generally speaking, can be reduced or isolated at static source, reaching the probability that reduces generation of static electricity, the equipment that for example adopts some to destatic, or on process conditions and board state, improve.But this kind method only can reduce the generation of static by the control to the static source, still can't avoid the problem of buildup of static electricity fully.Therefore, on the circuit design of panel, the circuit design of some tool electro-static discharge protection functions is set often, to reach the purpose of element protection.
The electrostatic discharge protection structure that prior art Taiwan utility model patent discloses for I281261 number, terminal in the transparent insulation substrate outside the viewing area is being pressed district (outer lead bonding region, OLB) form guard ring, around pixel electrode and TFT viewing area; Switch element is arranged on the guard ring, between viewing area and guard ring, when scan line and data wire accumulation electrostatic charge to a specified quantitative, make the electric connection of guard ring and scan line and data wire and open-minded, so that electrostatic charge is guided to guard ring.Guard ring is a conductive material, for example metal or tin indium oxide (ITO) etc.Switch element can be the structure of a transistor unit for example or a point discharge structure or the like unidirectional conducting, with when scan line and data wire accumulation electrostatic charge to a specified quantitative, can open.
Prior art is the neighboring area beyond the active viewing area on panel, the protection circuit ring of one ring-type short-circuit type (short-ring) is set, disperse to accumulate on the static content in the viewing area on the panel in order to conducting, prevent the localized accumulated of static and avoid the generation of static discharge.Wherein the resistance value of protection circuit ring is more little, and it disperses the ability of accumulation static good more, yet but causes signal to disturb easily.Therefore, if can design the better structure of an electrostatic discharge protective effect, the manufacturing of display panels will be helped quite at display panels.
The utility model content
The utility model provides a kind of electrostatic discharge protection structure to solve the problem of static discharge.
A purpose more of the present utility model provides a kind of electrostatic discharge protection structure, and described structure is to utilize virtual thin-film transistor, is beneficial to the static discharge of display floater.
Another purpose of the present utility model provides a kind of electrostatic discharge protection structure, and described structure is guided electrostatic energy to arrive specific zone release, does not influence the normal demonstration situation of display floater.
A kind of electrostatic discharge protection structure is to be made on the substrate of a LCD, comprises the pel array with a normality thin-film transistor and a virtual thin-film transistor on the described liquid crystal display substrate; Multi-strip scanning line and many data wires are crisscross arranged in described pel array, and described electrostatic discharge protection structure comprises:
One virtual scan line and a virtual data line are arranged in the described pel array, and described virtual scan line and described virtual data line are article one scan line and article one data wire of multi-strip scanning line and many data wires;
Described virtual thin-film transistor, correspondence is arranged at described article one scan line or described first data wire is beneficial to the release electrostatic lotus, described virtual thin-film transistor comprises one source pole, a drain and a gate, and the pattern of described source electrode or described drain is the club shaped structure that is set to not have the wing of nose.
Described substrate comprises a viewing area, and described virtual data line is to be made in outside the described viewing area, in order to as bringing out the zone that static discharge takes place.
The gate of described virtual thin-film transistor is the virtual scan line that is connected to respective column, and described virtual drain of film transistor is connected to the described virtual data line of corresponding row.
A kind of electrostatic discharge protection structure is to be made on the substrate of a LCD, comprises the pel array with a normality thin-film transistor and a virtual thin-film transistor on the described liquid crystal display substrate; Multi-strip scanning line and many data wires are crisscross arranged in described pel array, and described electrostatic discharge protection structure comprises:
One virtual scan line and a virtual data line are arranged in the described pel array, and described virtual scan line and described virtual data line are article one scan line and article one data wire of multi-strip scanning line and many data wires;
One virtual thin-film transistor, correspondence is arranged at described article one scan line or described first data wire is beneficial to the release electrostatic lotus, described virtual thin-film transistor comprises one source pole, a drain and a gate, and the pattern of described source electrode or described drain is to be set at least one prominent shape pattern setting in one of described drain and described gate.
Described substrate comprises a viewing area, and described virtual data line is to be made in outside the described viewing area, in order to as bringing out the zone that static discharge takes place.
The gate of described virtual thin-film transistor is the described virtual scan line that is connected to respective column, and described virtual drain of film transistor is connected to the described virtual data line of corresponding row.
A kind of electrostatic discharge protection structure is to be made on the substrate of a LCD, comprises the pel array with a normality thin-film transistor and a virtual thin-film transistor on the described liquid crystal display substrate; Multi-strip scanning line and many data wires are crisscross arranged in described pel array, and described electrostatic discharge protection structure comprises:
One virtual scan line and a virtual data line are arranged in the described pel array, and described virtual scan line and described virtual data line are article one scan line and article one data wire of multi-strip scanning line and many data wires;
Described virtual thin-film transistor, correspondence is arranged at described article one scan line or described first data wire is beneficial to the release electrostatic lotus, described virtual thin-film transistor comprises one source pole, a drain and a gate, and the pattern of described source electrode or described drain is to be set to the passage length of the passage length of described virtual thin-film transistor less than described normality thin-film transistor.
Described substrate comprises a viewing area, and described virtual data line is to be made in outside the described viewing area, in order to as bringing out the zone that static discharge takes place.
The gate of described virtual thin-film transistor is the described virtual scan line that is connected to respective column.
Described virtual drain of film transistor is connected to the described virtual data line of corresponding row.
The utlity model has following characteristics and advantage:
1, the guiding electrostatic energy discharges to specific zone, does not influence the normal demonstration situation of display floater;
2, simplicity of design, no complex circuit design, and can reach the effect of avoiding the circuit malfunction risk really;
3, electrostatic discharge protection structure can just possess the protection effect of static discharge when each layer structure finished, therefore the generation of pre-anti-electrostatic-discharge in real time.
Description of drawings
Fig. 1 is the schematic diagram of the utility model active-matrix formula display panels.
Fig. 2 is the layout of the ESD-protection structure of active-matrix formula display panels of the present utility model.
Fig. 3 is that the virtual thin-film transistor element of active-matrix formula display panels of the present utility model is in the sectional view of A-A ' direction.
Fig. 4 is the layout of ESD-protection structure of the active-matrix formula display panels of another embodiment of the present utility model.
Fig. 5 is the layout of ESD-protection structure of the active-matrix formula display panels of an embodiment more of the present utility model.
Embodiment
In order to make the purpose of this utility model, technical scheme and advantage clearer,, the utility model is further elaborated below in conjunction with drawings and Examples.Should be appreciated that specific embodiment described herein only in order to explanation the utility model, and be not used in qualification the utility model.
The utility model provides a kind of display floater of tool electrostatic discharge protection structure, to solve the problem of the display unit damage that static discharge was caused.The utility model mainly is the virtual thin-film transistor (Dummy TFT) that utilizes on the active-matrix formula display panels (active matrix liquid crystal display panel); utilize source/drain pattern (Source Drain pattern) design wherein; be beneficial to Electrostatic Discharge by discharging on the virtual thin-film transistor, and then reach the purpose of the thin-film transistor in the viewing area in the protection display floater.
As shown in Figure 1, it shows the schematic diagram of Thin Film Transistor-LCD, wherein display panels 50 comprises multi-strip scanning line (G0, G1, G2, G3..Gn) with many data wire (S0, S1, S2, S3..Sn), wherein multi-strip scanning line and many data wires are to take the set-up mode of matrix form to be beneficial to drive wherein pixel, and above-mentioned multi-strip scanning line and many data wires are to be crisscross arranged.
Consult Fig. 2, the schematic layout pattern of the ESD-protection structure of the Thin Film Transistor-LCD of its demonstration the utility model first embodiment.Above-mentioned ESD-protection structure comprises virtual pixel, virtual scan line 100 and virtual data line 101.Virtual pixel comprises virtual thin-film transistor 120, pixel capacitance and storage capacitors (not shown).Wherein virtual thin-film transistor 120 comprises that gate 100A (consulting Fig. 3) is made on the transparency carrier, source electrode 109 is formed on the semiconductor layer 105, and be connected in virtual data line 101, Yan Weiyi is haply perpendicular to the banded structure of virtual data line 101 with an embodiment; Drain 108 corresponding source electrodes 109 are arranged on the semiconductor layer 105, are that a banded structure is parallel to virtual data line 101 haply.Drain 108 comprises that a contact hole 104, one storage capacitors lead (wring) 102 are along virtual scan line 100 side settings.Transparency conducting layer 103 is arranged on the storage capacitors lead 102, and overlaps the zone between transparency conducting layer 103 and the storage capacitors lead 102 and form an electric capacity (Cs).
As shown in Figure 3, its virtual thin-film transistor 120 that shows LCD is in the sectional view of A-A ' direction.A-A ' direction indication is across the direction of virtual thin-film transistor source/drain.Wherein virtual thin-film transistor 120 comprises a gate 100A, and an insulating barrier 106 is formed on the gate 100A, and semiconductor pattern 105 is formed on the insulating barrier 106, by behind the depositing insulating layer, is shaped via lithography more usually.Polysilicon layer pattern 107 utilizes lithography to be formed on the semiconductor pattern 105.Source electrode 109 is formed on polysilicon layer pattern 107 and the semiconductor pattern 105.108 correspondences of drain are formed on the insulating barrier 106, and part is extended to polysilicon layer pattern 107, and on polysilicon layer pattern 107 and semiconductor pattern 105.One dielectric layer 110 is formed on source electrode 109, drain 108, semiconductor pattern 105 and the insulating barrier 106, and dielectric layer 110 has a contact hole (contact hole) 104 and is formed at wherein.Transparency conducting layer (zone) 103 is formed on drain 108 and the dielectric layer 110 and inserts contact hole 104, and in other words, transparency conducting layer 103 electrically connects drain 108 by contact hole 104.Transparency conducting layer 103 can utilize physical vaporous deposition or sputter to make the conductivity material usually.Source electrode 109, drain 108 generally can form by same processing procedure with virtual data line 101; Storage capacitors lead 102 shown in Figure 2 can form by same processing procedure with gate 100A.After utilizing synchronous deposited semiconductor film, make required pattern with little shadow and etch process.The L1 that Fig. 2 and Fig. 3 indicated then represents normality thin-film transistor passage length.
Again among the embodiment, be defined as dummy line (Dummy line) at article one scan line 100 and article one data wire 101 of display panels.Formed thin-film transistor is defined as virtual thin-film transistor 120 on the intersection point of above-mentioned scan line 100 and data wire 101 and other scan line or data wire, as ESD-protection structure.For example, virtual thin-film transistor 120 can form in same processing procedure with the normality thin-film transistor in the viewing area.Yet, in order to discharge the electrostatic charge that accumulates in the element effectively, the structural design of virtual thin-film transistor 120, can be different with the normality thin-film transistor in the viewing area, prevent that static discharge from destroying the normality thin-film transistor in the viewing area and preventing video picture inequality (rubbing mura) phenomenon so that can reach.
At above-mentioned, because the design of the thin-film transistor element of virtual thin-film transistor and viewing area is inequality, static discharge will easily tend to discharge on virtual thin-film transistor.In other words; the utility model mainly is the multiple source/drain change in pattern that is to utilize virtual thin-film transistor element; make static discharge be easier to be chosen on the virtual thin-film transistor and discharge, and then reach the interior normality thin-film transistor purpose of protection active region.And use this kind design, based on virtual thin-film transistor did not influence on display surface, so it need not to repair after discharging electric charge.
In one embodiment, the source/drain pattern of the thin-film transistor in the display panel pixel array is designed to have wing of nose shape pattern at the passage place.If the design of the normality thin-film transistor of virtual thin-film transistor and viewing area is as good as, then static discharge may not only can occur on the virtual thin-film transistor, also may produce static release by the thin-film transistor in the viewing area, thereby cause ill effect.Therefore, among the embodiment of the present utility model, as shown in Figure 2, it is that virtual drain of film transistor/source electrode pattern 108/109 is designed near passage (channel) L1 place or its its wing of nose shape be blocked, to form as corresponding club shaped structure, its end can be relative tip shape, in order to the accumulation electrostatic charge, this design will make electric charge more easily concentrate on this place, and the static release of point discharge takes place in virtual thin-film transistor 120 places.In another embodiment, as shown in Figure 4, with virtual drain of film transistor 108 and/or source electrode pattern 109 design some prominent shape pattern 109a, 108a respectively near passage length L2 place or its and 108b formed thereon, make electric charge more easily concentrate on this place and in virtual thin-film transistor 120 places static discharge takes place to discharge, prominent shape pattern can be formed at one-sided or both sides.If be formed at both sides, state as shown in Figure 4,109a, 108a and 108b arrange for dislocation, and the shape pattern that causes dashing forward is relative, is beneficial to release electrostatic.The person of noting, the arrangement and the number of prominent shape pattern can be decided on demand.In another embodiment, as shown in Figure 5, it is that passage length (channel length) L3 between the virtual thin-film transistor element 120 of drain/source electrode pattern 108/109 is designed to the passage length less than the thin-film transistor element of active zone, and this mainly acts on also is to make charge concentration easily make electric charge that point discharge takes place in virtual thin-film transistor element 120 places in this place and based on short distance.In addition, the source/drain pattern also can be selected the combination of the foregoing description for use.
Among each embodiment of the present utility model, identical constitutive requirements are repeated description or explanation not.Embodiment of the present utility model only is used to illustrate that notion of the present utility model is not the display floater that is used to limit structure of the present utility model or method made.Display floater comprises but is not defined as LCD, plasma display panel etc.
It should be noted that above-mentioned pixel design is only for an embodiment of the present utility model but not in order to limit the utility model.
Comprehensively above-mentioned, the utility model provides a kind of display floater of new tool electrostatic discharge protection structure, compared to prior art, has following characteristics and advantage:
1, the guiding electrostatic energy discharges to specific zone, does not influence the normal demonstration situation of display floater;
2, simplicity of design, no complex circuit design, and can reach the effect of avoiding the circuit malfunction risk really;
3, electrostatic discharge protection structure can just possess the protection effect of static discharge when each layer structure finished, therefore the generation of pre-anti-electrostatic-discharge in real time.
The above only is preferred embodiment of the present utility model; not in order to restriction the utility model; all any modifications of within spirit of the present utility model and principle, being done, be equal to and replace and improvement etc., all should be included within the protection range of the present utility model.
Claims (10)
1. an electrostatic discharge protection structure is to be made on the substrate of a LCD, comprises the pel array with a normality thin-film transistor and a virtual thin-film transistor on the described liquid crystal display substrate; Multi-strip scanning line and many data wires are crisscross arranged in described pel array, it is characterized in that described electrostatic discharge protection structure comprises:
One virtual scan line and a virtual data line are arranged in the described pel array, and described virtual scan line and described virtual data line are article one scan line and article one data wire of multi-strip scanning line and many data wires;
Described virtual thin-film transistor, correspondence is arranged at described article one scan line or described first data wire is beneficial to the release electrostatic lotus, described virtual thin-film transistor comprises one source pole, a drain and a gate, and the pattern of described source electrode or described drain is the club shaped structure that is set to not have the wing of nose.
2. electrostatic discharge protection structure as claimed in claim 1 is characterized in that described substrate comprises a viewing area, and described virtual data line is to be made in outside the described viewing area, in order to as bringing out the zone that static discharge takes place.
3. electrostatic discharge protection structure as claimed in claim 1 is characterized in that, the gate of described virtual thin-film transistor is the virtual scan line that is connected to respective column, and described virtual drain of film transistor is connected to the described virtual data line of corresponding row.
4. an electrostatic discharge protection structure is to be made on the substrate of a LCD, comprises the pel array with a normality thin-film transistor and a virtual thin-film transistor on the described liquid crystal display substrate; Multi-strip scanning line and many data wires are crisscross arranged in described pel array, it is characterized in that described electrostatic discharge protection structure comprises:
One virtual scan line and a virtual data line are arranged in the described pel array, and described virtual scan line and described virtual data line are article one scan line and article one data wire of multi-strip scanning line and many data wires;
One virtual thin-film transistor, correspondence is arranged at described article one scan line or described first data wire is beneficial to the release electrostatic lotus, described virtual thin-film transistor comprises one source pole, a drain and a gate, and the pattern of described source electrode or described drain is to be set at least one prominent shape pattern setting in one of described drain and described gate.
5. electrostatic discharge protection structure as claimed in claim 4 is characterized in that described substrate comprises a viewing area, and described virtual data line is to be made in outside the described viewing area, in order to as bringing out the zone that static discharge takes place.
6. electrostatic discharge protection structure as claimed in claim 4 is characterized in that, the gate of described virtual thin-film transistor is the described virtual scan line that is connected to respective column, and described virtual drain of film transistor is connected to the described virtual data line of corresponding row.
7. an electrostatic discharge protection structure is to be made on the substrate of a LCD, comprises the pel array with a normality thin-film transistor and a virtual thin-film transistor on the described liquid crystal display substrate; Multi-strip scanning line and many data wires are crisscross arranged in described pel array, it is characterized in that described electrostatic discharge protection structure comprises:
One virtual scan line and a virtual data line are arranged in the described pel array, and described virtual scan line and described virtual data line are article one scan line and article one data wire of multi-strip scanning line and many data wires;
Described virtual thin-film transistor, correspondence is arranged at described article one scan line or described first data wire is beneficial to the release electrostatic lotus, described virtual thin-film transistor comprises one source pole, a drain and a gate, and the pattern of described source electrode or described drain is to be set to the passage length of the passage length of described virtual thin-film transistor less than described normality thin-film transistor.
8. electrostatic discharge protection structure as claimed in claim 7 is characterized in that described substrate comprises a viewing area, and described virtual data line is to be made in outside the described viewing area, in order to as bringing out the zone that static discharge takes place.
9. electrostatic discharge protection structure as claimed in claim 7 is characterized in that, the gate of described virtual thin-film transistor is the described virtual scan line that is connected to respective column.
10. electrostatic discharge protection structure as claimed in claim 7 is characterized in that, described virtual drain of film transistor is connected to the described virtual data line of corresponding row.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010201497818U CN201845768U (en) | 2010-03-30 | 2010-03-30 | Electrostatic discharge protection structure |
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| Application Number | Priority Date | Filing Date | Title |
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| CN2010201497818U CN201845768U (en) | 2010-03-30 | 2010-03-30 | Electrostatic discharge protection structure |
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| CN201845768U true CN201845768U (en) | 2011-05-25 |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103149757A (en) * | 2011-12-07 | 2013-06-12 | 乐金显示有限公司 | Liquid crystal display device and method for fabricating the same |
| CN104392990A (en) * | 2014-11-25 | 2015-03-04 | 合肥鑫晟光电科技有限公司 | Array substrate and display device |
| CN105242463A (en) * | 2015-11-03 | 2016-01-13 | 深圳市华星光电技术有限公司 | Liquid crystal display device |
| WO2016165253A1 (en) * | 2015-04-17 | 2016-10-20 | 京东方科技集团股份有限公司 | Array substrate and display device |
| WO2019047329A1 (en) * | 2017-09-05 | 2019-03-14 | 武汉华星光电技术有限公司 | Low temperature polycrystalline silicon panel |
| CN109581771A (en) * | 2018-12-19 | 2019-04-05 | 惠科股份有限公司 | array substrate, array substrate manufacturing method and display device |
-
2010
- 2010-03-30 CN CN2010201497818U patent/CN201845768U/en not_active Expired - Fee Related
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103149757A (en) * | 2011-12-07 | 2013-06-12 | 乐金显示有限公司 | Liquid crystal display device and method for fabricating the same |
| US9025099B2 (en) | 2011-12-07 | 2015-05-05 | Lg Display Co., Ltd. | Liquid crystal display device and method for fabricating the same |
| CN103149757B (en) * | 2011-12-07 | 2015-11-25 | 乐金显示有限公司 | Liquid crystal disply device and its preparation method |
| CN104392990A (en) * | 2014-11-25 | 2015-03-04 | 合肥鑫晟光电科技有限公司 | Array substrate and display device |
| CN104392990B (en) * | 2014-11-25 | 2018-07-13 | 合肥鑫晟光电科技有限公司 | A kind of array substrate and display device |
| WO2016165253A1 (en) * | 2015-04-17 | 2016-10-20 | 京东方科技集团股份有限公司 | Array substrate and display device |
| US10026755B2 (en) | 2015-04-17 | 2018-07-17 | Boe Technology Group Co., Ltd. | Array substrate and display device |
| CN105242463A (en) * | 2015-11-03 | 2016-01-13 | 深圳市华星光电技术有限公司 | Liquid crystal display device |
| CN105242463B (en) * | 2015-11-03 | 2018-10-19 | 深圳市华星光电技术有限公司 | Liquid crystal display device |
| WO2019047329A1 (en) * | 2017-09-05 | 2019-03-14 | 武汉华星光电技术有限公司 | Low temperature polycrystalline silicon panel |
| CN109581771A (en) * | 2018-12-19 | 2019-04-05 | 惠科股份有限公司 | array substrate, array substrate manufacturing method and display device |
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Owner name: CPT TECHNOLOGY (GROUP) CO., LTD. Free format text: FORMER OWNER: CPT DISPLAY TECHNOLOGY SHENZHEN LTD. Effective date: 20130819 |
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Free format text: CORRECT: ADDRESS; FROM: 518000 SHENZHEN, GUANGDONG PROVINCE TO: 350000 FUZHOU, FUJIAN PROVINCE |
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Effective date of registration: 20130819 Address after: 350000, No. 6 West Road, Mawei District, Fujian, Fuzhou Patentee after: CPT DISPLAY TECHNOLOGY (SHENZHEN)CO., LTD. Patentee after: Chunghwa Picture Tubes Ltd. Address before: 518000, Guangming hi tech Industrial Park, Shenzhen, Guangdong, No. 9, Ming Tong Road, Baoan District Patentee before: CPT Display Technology Shenzhen Ltd. Patentee before: Chunghwa Picture Tubes Ltd. |
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| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20110525 Termination date: 20180330 |