CN205657603U - Power module and transverter - Google Patents

Power module and transverter Download PDF

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Publication number
CN205657603U
CN205657603U CN201620447987.6U CN201620447987U CN205657603U CN 205657603 U CN205657603 U CN 205657603U CN 201620447987 U CN201620447987 U CN 201620447987U CN 205657603 U CN205657603 U CN 205657603U
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China
Prior art keywords
wholly
brachium pontis
insulated gate
gate bipolar
bipolar transistor
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CN201620447987.6U
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Chinese (zh)
Inventor
刘继权
周敏
伦振坚
贾红舟
鲁丽娟
彭冠炎
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China Energy Engineering Group Guangdong Electric Power Design Institute Co Ltd
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China Energy Engineering Group Guangdong Electric Power Design Institute Co Ltd
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Abstract

The utility model relates to a power module and transverter, first accuse type full device concatenates with second accuse type full device in the power module, and second accuse type full device concatenates with third accuse type full device is reverse, first diode and first accuse type full device reverse parallel connection, second diode and second accuse type full device reverse parallel connection, third diode and third accuse type full device reverse parallel connection, first accuse type full device, second accuse type full device and third accuse type full device concatenate back and capacitance parallel connection, use in the transverter, when short -circuit fault takes place for the positive and negative extremes of transverter, as long as the power module that locks simultaneously, moreover the electric capacity in each power module voltage with be higher than its alternating voltage who connects, the current path in the power module does not just have the electric current and flows through, realizes transverter direct current the cleaing away certainly of trouble of inclining.

Description

Power model and inverter
Technical field
This utility model relates to electric and electronic technical field, particularly relates to power model and inverter.
Background technology
Along with the development of Power Electronic Technique, high voltage, Large Copacity have become the weight of Power Electronic Technique Want developing direction, high voltage, the jumbo the most numerous occasion of power electronics inverter have important application, As: Light HVDC Transmission (Voltage Source Converter-High Voltage Direct Current, VSC-HVDC), STATCOM (Static Synchronous Compensator, STATCOM), Active Power Filter-APF (Active Power Filter, APF), high voltage converter etc., and just obtaining increasing Pay close attention to.
High voltage, jumbo power electronics inverter have various topological structures, including based on valve group string Two level block of connection, diode clamp bit architecture, striding capacitance structure, combination converter structure, H bridge level Connection structure, modular construction (Modular Multilevel Converter, MMC) etc..Wherein, H bridge Cascade structure, MMC structure are because having modularized design, being easy to dilatation, exchange outlet side exit potential harmonic wave Content is few without advantages such as alternating current filters, has more successful Application at electrical network.
Existing MMC structure all use half-H-bridge, H bridge or CDSM (Clamp Doulbe Sub-modular, Clamp Shuangzi module) (as shown in Figure 1) as power unit module, concatenate level by the output port of module Connection reaches high voltage, jumbo purpose.Wherein SMnRepresent the n-th power unit module, UdcRepresent MMC Converter DC-side voltage.
The MMC structure of existing employing half H slab bridge structure does not possess direct current self-cleaning ability, in DC side event Need to be after all modules of locking during barrier, jumping AC circuit breaker could be by fault clearance, and flow process is complicated, and event is relatively Long.The MMC inverter using CDSM structure possesses DC Line Fault self-cleaning ability, but the power used In unit, components and parts are more, connect and control more complicated.
Utility model content
Based on this, it is necessary to for existing modularity inverter or do not possess DC Line Fault from understanding ability, Or possess DC Line Fault removing function but baroque problem, it is provided that a kind of power model and inverter.
A kind of power model, including the first wholly-controled device, the second wholly-controled device, the 3rd wholly-controled device, First diode, the second diode, the 3rd diode and electric capacity;
First wholly-controled device and the second wholly-controled device concatenation, the second wholly-controled device and the 3rd full-control type device Part reversely concatenates;First diode and the first wholly-controled device reverse parallel connection, the second diode and second is controlled entirely Type device reverse parallel connection, the 3rd diode and the 3rd wholly-controled device reverse parallel connection, the first wholly-controled device, Second wholly-controled device and the 3rd wholly-controled device are in parallel with electric capacity after concatenating.
A kind of inverter, including first group of three change of current brachium pontis, second group of three change of current brachium pontis, first group of bridge Arm reactor, second group of brachium pontis reactor, three charging resistors, one group of three-phase isolation switch and an open circuit The bar number of the change of current brachium pontis in device, first group of change of current brachium pontis and second group of change of current brachium pontis is three, first group of bridge The number of the brachium pontis reactor in arm reactor and second group of brachium pontis reactor is three;
The positive terminal of three change of current brachium pontis in first group of change of current brachium pontis is all connected to the first junction point, second group The negative pole end of three change of current brachium pontis in change of current brachium pontis is all connected to the second junction point;
Three bridges in the negative pole end of three change of current brachium pontis in first group of change of current brachium pontis and first group of brachium pontis reactor One end of arm reactor connects one to one, the positive terminal of three change of current brachium pontis in second group of change of current brachium pontis with In second group of brachium pontis reactor, one end of three brachium pontis reactors connects one to one, first group of brachium pontis reactor In the other end one of three brachium pontis reactors in the other end of three brachium pontis reactors and second group of brachium pontis reactor One corresponding connection;
The other end of the other end of first group of three brachium pontis reactor and second group of three brachium pontis reactor one a pair Three junction points that should connect connect one to one with the three-phase of three-phase isolation switch, the three of three-phase isolation switch In parallel with three charging resistor one_to_one corresponding;
Chopper is connected between the first junction point and the second junction point;
If any one change of current brachium pontis in first group of change of current brachium pontis and second group of change of current brachium pontis all includes concatenation Dry above-mentioned power model, the first wholly-controled device and the company of the second wholly-controled device in previous power model Contact is connected with the junction point of electric capacity with the 3rd wholly-controled device in later power model, stem after concatenation In power model, the junction point of the 3rd wholly-controled device and electric capacity is as the positive terminal of change of current brachium pontis, the merit of afterbody In rate module, the junction point of the first wholly-controled device and the second wholly-controled device is as the negative pole end of change of current brachium pontis.
According to above-mentioned scheme of the present utility model, the first wholly-controled device and the second full-control type device in power model Part concatenates, and the second wholly-controled device and the 3rd wholly-controled device reversely concatenate;First diode and first is controlled entirely Type device reverse parallel connection, the second diode and the second wholly-controled device reverse parallel connection, the 3rd diode and the 3rd Wholly-controled device reverse parallel connection, the first wholly-controled device, the second wholly-controled device and the 3rd wholly-controled device string Entirety after connecing is in parallel with electric capacity;During implementing, when normally working, by control signal control Three wholly-controled device turn off, and the level that output needs, fail lockout power model, power model only has The standby current path to electric capacity charging;Apply in inverter, when the positive and negative event that is extremely short-circuited of inverter During barrier, if all power models of locking simultaneously, in the passage path that fault current is possible in each power model Capacitance voltage and the alternating voltage that connected higher than inverter, the electricity in the passage path that fault current is possible Flow path would not have electric current to flow through, it is achieved the self-cleaning of Converter DC-side fault, and compared to CDSM The MMC inverter of structure, the structure of the power model of inverter of the present utility model is simpler, unit's device Part is less, and inside connects and controls simpler, reduces cost.
Accompanying drawing explanation
Fig. 1 is the structural representation of the power model in conventional art and inverter;
Fig. 2 is the structural representation of the power model of one of them embodiment;
Fig. 3 is a kind of concrete structure schematic diagram of the power model of one of them embodiment;
Fig. 4 is the another kind of concrete structure schematic diagram of the power model of one of them embodiment;
Fig. 5 is the structural representation of the inverter of one of them embodiment;
Fig. 6-a be one of them embodiment inverter in a kind of electric current road of duty one of power model Footpath schematic diagram;
Fig. 6-b be one of them embodiment inverter in the another kind of electric current of duty one of power model Path schematic diagram;
Fig. 7-a be one of them embodiment inverter in a kind of electric current road of duty two of power model Footpath schematic diagram;
Fig. 7-b be one of them embodiment inverter in the another kind of electric current of duty two of power model Path schematic diagram;
Fig. 8 be one of them embodiment inverter in a kind of current path of duty three of power model Schematic diagram;
Fig. 9-a is a kind of charging current path schematic diagram of the inverter of one of them embodiment;
Fig. 9-b is the another kind of charging current path schematic diagram of the inverter of one of them embodiment.
Detailed description of the invention
For making the purpose of this utility model, technical scheme and advantage clearer, below in conjunction with accompanying drawing and Embodiment, is described in further detail this utility model.Should be appreciated that described herein specifically Embodiment, only in order to explain this utility model, does not limit protection domain of the present utility model.
Shown in Figure 2, it is the structural representation of the power model of an embodiment.Merit in this embodiment Rate module, including first wholly-controled device the 110, second wholly-controled device the 120, the 3rd wholly-controled device 130, First diode the 140, second diode the 150, the 3rd diode 160 and electric capacity 170;
First wholly-controled device 110 concatenates with the second wholly-controled device 120, the second wholly-controled device 120 with 3rd wholly-controled device 130 reversely concatenates;First diode 140 and the first wholly-controled device 110 are the most also Connection, the second diode 150 and the second wholly-controled device 120 reverse parallel connection, the 3rd diode 160 and the 3rd Wholly-controled device 130 reverse parallel connection, first wholly-controled device the 110, second wholly-controled device 120 and the 3rd is complete Control type device 130 is in parallel with electric capacity 170 after concatenating.
In the present embodiment, in power model, the first wholly-controled device 110 is gone here and there with the second wholly-controled device 120 Connecing, the second wholly-controled device 120 reversely concatenates with the 3rd wholly-controled device 130;First diode 140 with First wholly-controled device 110 reverse parallel connection, the second diode 150 and the second wholly-controled device 120 are the most also Connection, the 3rd diode 160 and the 3rd wholly-controled device 130 reverse parallel connection, the first wholly-controled device 110, the Two wholly-controled device 120 and the 3rd wholly-controled device 130 are in parallel with electric capacity 170 after concatenating.Implementing During, when normally working, control three wholly-controled device by control signal and turn off, the electricity that output needs Flat, fail lockout power model, power model only possesses the current path to electric capacity charging;Apply and changing In stream device, when inverter positive and negative is extremely short-circuited fault, if all power models of locking simultaneously, Capacitance voltage in each power model and the friendship that connected higher than inverter in the passage path that fault current is possible Stream voltage, the current path in the passage path that fault current is possible would not have electric current to flow through, it is achieved the change of current The self-cleaning of device DC side fault, and compared to the MMC inverter of CDSM structure, this utility model The structure of power model of inverter simpler, components and parts are less, internal connect and control simpler, Reduce cost.
Preferably, the first wholly-controled device 110 is controlled entirely with the junction point and the 3rd of the second wholly-controled device 120 The junction point of type device 130 and electric capacity 170 is as the signal terminal of described power model.The two junction point May be used for being connected with other devices.
Wherein in an embodiment, first wholly-controled device the 110, second wholly-controled device 120 and the 3rd is complete The type of control type device 130 is the most identical with parameter.
In the present embodiment, the first wholly-controled device the 110, second wholly-controled device 120 and the 3rd full-control type device Part 130 is same type of wholly-controled device, and parameter is the most identical, is so easy to be uniformly controlled signal, from And each wholly-controled device is controlled.
Wherein in an embodiment, first diode the 140, second diode the 150, the 3rd diode 160 Type the most identical with parameter.
In the present embodiment, first diode the 140, second diode the 150, the 3rd diode 160 is same The diode of type, parameter is the most identical, is so easy to the electric current of unified each diode.
Wherein in an embodiment, the first wholly-controled device 110 and the second wholly-controled device 120 forward string Connect.
Wherein in an embodiment, as it is shown on figure 3, the first wholly-controled device 110 is the first insulated gate pair Bipolar transistor T1, the second wholly-controled device 120 is the second insulated gate bipolar transistor T2, and the 3rd controls entirely Type device 130 is the 3rd insulated gate bipolar transistor T3;
The emitter stage of the first insulated gate bipolar transistor T1 and the collection of the second insulated gate bipolar transistor T2 Electrode connects, the emitter stage of the second insulated gate bipolar transistor T2 and the 3rd insulated gate bipolar transistor The emitter stage of T3 connects;
First diode 140 is diode D1, and the second diode 150 is diode D2, the 3rd diode 160 is diode D3;
The positive pole of diode D1 and the emitter stage of the first insulated gate bipolar transistor T1 connect, diode D1 Negative pole and the first insulated gate bipolar transistor T1 colelctor electrode connect;The positive pole of diode D2 and second The emitter stage of insulated gate bipolar transistor T2 connects, the negative pole of diode D2 and the second insulated gate bipolar The colelctor electrode of transistor T2 connects;The positive pole of diode D3 and the 3rd insulated gate bipolar transistor T3's Emitter stage connects, and the negative pole of diode D3 and the colelctor electrode of the 3rd insulated gate bipolar transistor T3 connect;
The positive pole of electric capacity 170 and the colelctor electrode of the first insulated gate bipolar transistor T1 connect, electric capacity 170 The colelctor electrode of negative pole and the 3rd insulated gate bipolar transistor T3 connects.
In the present embodiment, wholly-controled device is insulated gate bipolar transistor, and the first insulated gate bipolar is brilliant Body pipe T1 and the second insulated gate bipolar transistor T2 forward concatenation, the second insulated gate bipolar transistor T2 Reversely concatenate with the 3rd insulated gate bipolar transistor T3, diode D1, diode D2, diode D3 With the first insulated gate bipolar transistor T1, the second insulated gate bipolar transistor T2, the 3rd insulated gate bipolar Transistor npn npn T3 one_to_one corresponding reverse parallel connection, the first insulated gate bipolar transistor T1, the second insulated gate are double Bipolar transistor T2 and the 3rd insulated gate bipolar transistor T3 is in parallel with electric capacity 170 after concatenating.By touching Send out and control the first insulated gate bipolar transistor T1, the second insulated gate bipolar transistor T2 and the 3rd insulation The conducting state of grid bipolar transistor T3, can make power model be in different duties, in order to defeated Go out different level, the U in Fig. 3SMFor the output voltage of power model, iSMOutput electricity for power model Stream, UcMagnitude of voltage for electric capacity C.
Wherein in an embodiment, the first wholly-controled device 110 is reversely gone here and there with the second wholly-controled device 120 Connect.
Wherein in an embodiment, as shown in Figure 4, the first wholly-controled device 110 is that the first insulated gate is double Bipolar transistor T1, the second wholly-controled device 120 is the second insulated gate bipolar transistor T2, and the 3rd controls entirely Type device 130 is the 3rd insulated gate bipolar transistor T3;
The emitter stage of the first insulated gate bipolar transistor T1 and sending out of the second insulated gate bipolar transistor T2 Emitter-base bandgap grading connects, the colelctor electrode of the second insulated gate bipolar transistor T2 and the 3rd insulated gate bipolar transistor The colelctor electrode of T3 connects;
First diode 140 is diode D1, and the second diode 150 is diode D2, the 3rd diode 160 is diode D3;
The positive pole of diode D1 and the emitter stage of the first insulated gate bipolar transistor T1 connect, diode D1 Negative pole and the first insulated gate bipolar transistor T1 colelctor electrode connect;The positive pole of diode D2 and second The emitter stage of insulated gate bipolar transistor T2 connects, the negative pole of diode D2 and the second insulated gate bipolar The colelctor electrode of transistor T2 connects;The positive pole of diode D3 and the 3rd insulated gate bipolar transistor T3's Emitter stage connects, and the negative pole of diode D3 and the colelctor electrode of the 3rd insulated gate bipolar transistor T3 connect;
The positive pole of electric capacity 170 and the colelctor electrode of the first insulated gate bipolar transistor T1 connect, electric capacity 170 The emitter stage of negative pole and the 3rd insulated gate bipolar transistor T3 connects.
In the present embodiment, wholly-controled device is insulated gate bipolar transistor, and the first insulated gate bipolar is brilliant Body pipe T1 and the second insulated gate bipolar transistor T2 reversely concatenates, the second insulated gate bipolar transistor T2 Reversely concatenate with the 3rd insulated gate bipolar transistor T3, diode D1, diode D2, diode D3 With the first insulated gate bipolar transistor T1, the second insulated gate bipolar transistor T2, the 3rd insulated gate bipolar Transistor npn npn T3 one_to_one corresponding reverse parallel connection, the first insulated gate bipolar transistor T1, the second insulated gate are double Bipolar transistor T2 and the 3rd insulated gate bipolar transistor T3 is in parallel with electric capacity 170 after concatenating.By touching Send out and control the first insulated gate bipolar transistor T1, the second insulated gate bipolar transistor T2 and the 3rd insulation The conducting state of grid bipolar transistor T3, can make power model be in different duties, in order to defeated Go out different level, the U in Fig. 4SMFor the output voltage of power model, iSMOutput electricity for power model Stream, UCMagnitude of voltage for electric capacity C.
In power model of the present utility model, the first wholly-controled device 110 and the second wholly-controled device 120 Forward concatenation or reversely concatenation, and wholly-controled device can be not only insulated gate bipolar transistor, It can also be other kinds of wholly-controled device.
According to above-mentioned power model, this utility model also provides for a kind of inverter, the most of the present utility model below The embodiment of inverter is described in detail.
Shown in Figure 5, it is the structural representation of the inverter of an embodiment.The change of current in this embodiment Device includes first group of change of current brachium pontis, second group of change of current brachium pontis, first group of brachium pontis reactor, second group of brachium pontis electricity Anti-device, three charging resistors, one group of three-phase isolation switch and a chopper, first group of change of current brachium pontis and The bar number of the change of current brachium pontis in two groups of change of current brachium pontis is three, first group of brachium pontis reactor and second group of brachium pontis electricity The number of the brachium pontis reactor in anti-device is three;
The positive terminal of the three articles of change of current brachium pontis 210,220,230 in first group of change of current brachium pontis is all connected to the 3rd Junction point, the negative pole end of three change of current brachium pontis 240,250,260 in second group of change of current brachium pontis is all connected to 4th junction point;
The negative pole end of three change of current brachium pontis 210,220,230 in first group of change of current brachium pontis and first group of brachium pontis In reactor, one end of three brachium pontis reactor Lc1, Lc2, Lc3 connects one to one, second group of converter bridge Three brachium pontis in the positive terminal of three change of current brachium pontis 240,250,260 in arm and second group of brachium pontis reactor One end of reactor Lc4, Lc5, Lc6 connects one to one, three brachium pontis electricity in first group of brachium pontis reactor Three brachium pontis reactor Lc4 in the other end of anti-device Lc1, Lc2, Lc3 and second group of brachium pontis reactor, Lc5, The other end of Lc6 connects one to one;
The other end of first group three brachium pontis reactor Lc1, Lc2, Lc3 and second group of three brachium pontis reactor Three junction points that the other end of Lc4, Lc5, Lc6 connects one to one and the three-phase of three-phase isolation switch S1 Connect one to one, the three-phase of three-phase isolation switch S1 and three charging resistors R1, R2, R3 one_to_one corresponding In parallel;
Chopper S2 is connected between the first junction point and the second junction point;
If any one change of current brachium pontis in first group of change of current brachium pontis and second group of change of current brachium pontis all includes concatenation Dry above-mentioned power model, the first wholly-controled device and the company of the second wholly-controled device in previous power model Contact is connected with the junction point of described electric capacity with the 3rd wholly-controled device in later power model, first after concatenation In the power model in portion, the junction point of the 3rd wholly-controled device and described electric capacity is as the positive pole of described change of current brachium pontis End, in the power model of afterbody, the junction point of the first wholly-controled device and the second wholly-controled device changes as described The negative pole end of stream brachium pontis.
In the present embodiment, above-mentioned power model is applied in inverter, when positive and negative extreme of inverter During raw short trouble, if all power models of locking simultaneously, because of each in the passage path that fault current is possible Capacitance voltage in power model and the alternating voltage connected higher than inverter, the path that fault current is possible Current path in path would not have electric current to flow through, it is achieved the self-cleaning of Converter DC-side fault, and Compared to the MMC inverter of CDSM structure, the structure of the power model of inverter of the present utility model is more Adding simple, components and parts are less, and inside connects and controls simpler, reduces cost.
Preferably, three charging resistors R1, R2, R3 parameter are identical.
In a specific embodiment, (the Insulated with wholly-controled device as insulated gate bipolar transistor Gate Bipolar Transistor) as a example by, the operation principle of inverter is illustrated:
Power model in inverter controls the conducting state of insulated gate bipolar transistor by triggering, permissible Making power model be in different duties, power model one has three kinds of duties.
Duty one, insulated gate bipolar transistor T1 turns on, insulated gate bipolar transistor T2, T3 Cut-off;
Output electric current i when power modelSM< when 0, its current path is as shown in Fig. 6-a, and electric current is by insulation Grid bipolar transistor T1 becomes path, the voltage that voltage is electric capacity C of power model output with electric capacity C-shaped UC, electric capacity C is in discharge condition;
Output electric current i when power modelSM> 0 time, its current path as shown in Fig. 6-b, electric current pass through two poles Pipe D1 becomes path, the voltage U that voltage is electric capacity C of power model output with electric capacity C-shapedC, at electric capacity C In discharge condition.
Duty two, insulated gate bipolar transistor T2, T3 conducting, insulated gate bipolar transistor T1 Cut-off;
Output electric current i when power modelSM< when 0, its current path is as shown in Fig. 7-a, and electric current passes through two poles Pipe D2 and insulated gate bipolar transistor T3 forms path, and the voltage of power model output is 0, electric capacity C It is in bypass condition;
Output electric current i when power modelSM> 0 time, its current path as shown in Fig. 7-b, electric current by insulation Grid bipolar transistor T2 and diode D3 forms path, and the voltage of power model output is 0, electric capacity C It is in bypass condition.
Duty three, insulated gate bipolar transistor T1, T2, T3 are turned off;
Output electric current i when power modelSM< when 0, whole power model is in cut-off state, does not possess electricity Circulation flow path;
Output electric current i when power modelSM> 0 time, its current path as shown in Figure 8, electric current pass through two poles Pipe D2 becomes path, the voltage U that voltage is electric capacity C of power model output with electric capacity C-shapedC, at electric capacity C In charged state.
Inverter needs to carry out initializing charging before normal work.From the operation principle of inverter, In the case of the equal locking of T1, T2, T3, on inverter three-phase between brachium pontis (i.e. first group change of current brachium pontis) or AC open circuit on path, the most only closing can not be constituted between brachium pontis (i.e. second group change of current brachium pontis) under three-phase Device, inverter can not complete to initialize charging.This utility model is by the positive and negative electrode bus at inverter (i.e. Inverter positive and negative extreme) between increase chopper S2, realize whole charging process, charging process divides three The individual stage.
In the stage one, band charging resistor is charged to the half of ac line voltage.Process is: be separated by the three of AC Leave pass S1 to disconnect, charging resistor is put into, the chopper S2 of DC side is closed, by positive and negative simultaneously Pole bus short join, the AC chopper that then closes i.e. starts to charge up.When certain phase voltage amplitude is the highest, real Now to brachium pontis under this phase and the charging of upper brachium pontis that remaining is biphase;When certain phase voltage amplitude is minimum, to this phase Upper brachium pontis and the lower brachium pontis charging that remaining is biphase.As a example by A phase, when A phase voltage is the highest, it is achieved to A phase The charging of brachium pontis on lower brachium pontis and B, C phase thereof, its charging process is as shown in Fig. 9-a;When A phase voltage is minimum, Realizing the charging of brachium pontis lower to brachium pontis in A phase and B, C phase thereof, its charging process is as shown in Fig. 9-b.Charging After Wen Ding, the voltage of all brachium pontis is close to the half of AC system line voltage.
In the stage two: unlock inverter, make brachium pontis all power models conducting T2, T3, remaining brachium pontis in A phase Locking, can make the upper and lower brachium pontis of B, C phase charge to close to AC system line voltage;Then make in B phase Brachium pontis all power models conducting T2, T3, remaining brachium pontis locking, the upper and lower brachium pontis of A phase can be made also to fill Electricity is to close to AC system line voltage;
In the stage three: all brachium pontis of locking, cut-off breaker S2, close after three-phase isolation switch S1, again solve Lock all brachium pontis, enter the controlled charging of normal every phase brachium pontis.On three-phase as a example by brachium pontis, implementation process is, Make bridge all power models conducting T2, T3 in A phase, by controlling the input power of the biphase upper brachium pontis of B, C The number of module, can make its power model charge to load voltage value;In like manner, by making bridge institute in B phase Power model is had to turn on T2, T3, by controlling the number putting into power model of the biphase upper brachium pontis of A, The power model making A phase also charges to load voltage value.The charging process of lower brachium pontis three-phase is similar with upper brachium pontis.
Inverter charging complete, disconnects chopper S2, after entering normal mode of operation, if it occur that the change of current Device positive and negative electrode terminal shortcircuit fault, after all of power model of each brachium pontis of locking simultaneously, electric current is the most also deposited Circulation path in Fig. 9-a and Fig. 9-b.But when normally working, power model capacitance voltage in above-mentioned path Be the several times of ac line voltage, the T1 of all power models is in reverse blocking state, it is impossible to conducting, So time Fig. 9-a and Fig. 9-b in current path electric current can not be had to flow through, i.e. achieve DC side fault from Remove.
If it occur that one pole shorted to earth, after all of power model of each brachium pontis of locking simultaneously, the most do not deposit At current path, also achieve the self-cleaning of DC side fault.
Disconnecting switch can be chopper, it is also possible to be the disconnecting switch of other forms possessing switching function.
Inverter of the present utility model possesses DC Line Fault self-cleaning ability, solves the semi-bridge type MMC change of current Device need to disconnect AC circuit breaker and remove the defect of DC side fault, compares with Fig. 1 and understands, of the present utility model Number is bridge-type MMC inverter the 3/4 of insulated gate bipolar transistor used in power model;With CDSM compares, and many 1/2 IGBT of every level, a few diode, economy is suitable, but components and parts are relatively Few, internal connection and control are the simplest.
In this utility model, the ordinal number such as " first ", " second " is intended merely to carry out involved parts Distinguish, be not that parts itself are defined.
Each technical characteristic of embodiment described above can combine arbitrarily, for making description succinct, the most right The all possible combination of each technical characteristic in above-described embodiment is all described, but, if these skills There is not contradiction in the combination of art feature, is all considered to be the scope that this specification is recorded.
Embodiment described above only have expressed several embodiments of the present utility model, its describe more concrete and In detail, but therefore can not be interpreted as the restriction to utility model patent scope.It should be pointed out that, it is right For those of ordinary skill in the art, without departing from the concept of the premise utility, it is also possible to do Going out some deformation and improvement, these broadly fall into protection domain of the present utility model.Therefore, this utility model is special The protection domain of profit should be as the criterion with claims.

Claims (8)

1. a power model, it is characterised in that include the first wholly-controled device, the second wholly-controled device, 3rd wholly-controled device, the first diode, the second diode, the 3rd diode and electric capacity;
Described first wholly-controled device concatenates with described second wholly-controled device, described second wholly-controled device with Described 3rd wholly-controled device reversely concatenates;Described first diode is with described first wholly-controled device the most also Connection, described second diode and described second wholly-controled device reverse parallel connection, described 3rd diode is with described 3rd wholly-controled device reverse parallel connection, described first wholly-controled device, described second wholly-controled device and described 3rd wholly-controled device is in parallel with described electric capacity after concatenating.
Power model the most according to claim 1, it is characterised in that described first wholly-controled device, Described second wholly-controled device is the most identical with parameter with the type of described 3rd wholly-controled device.
Power model the most according to claim 1, it is characterised in that described first diode, described Second diode, described 3rd diode type the most identical with parameter.
Power model the most according to claim 1, it is characterised in that described first wholly-controled device with Described second wholly-controled device forward concatenation.
Power model the most according to claim 4, it is characterised in that described first wholly-controled device is First insulated gate bipolar transistor, described second wholly-controled device is the second insulated gate bipolar transistor, Described 3rd wholly-controled device is the 3rd insulated gate bipolar transistor;
The emitter stage of described first insulated gate bipolar transistor and described second insulated gate bipolar transistor Colelctor electrode connects, the emitter stage of described second insulated gate bipolar transistor and described 3rd insulated gate bipolar The emitter stage of transistor connects;
The positive pole of described first diode is connected with the emitter stage of described first insulated gate bipolar transistor, institute The colelctor electrode of the negative pole and described first insulated gate bipolar transistor of stating the first diode is connected;Described second The positive pole of diode is connected with the emitter stage of described second insulated gate bipolar transistor, described second diode Negative pole be connected with the colelctor electrode of described second insulated gate bipolar transistor;The positive pole of described 3rd diode Being connected with the emitter stage of described 3rd insulated gate bipolar transistor, the negative pole of described 3rd diode is with described The colelctor electrode of the 3rd insulated gate bipolar transistor connects;
The positive pole of described electric capacity is connected with the colelctor electrode of described first insulated gate bipolar transistor, described electric capacity Negative pole be connected with the colelctor electrode of described 3rd insulated gate bipolar transistor.
Power model the most according to claim 1, it is characterised in that described first wholly-controled device with Described second wholly-controled device reversely concatenates.
Power model the most according to claim 6, it is characterised in that described first wholly-controled device is First insulated gate bipolar transistor, described second wholly-controled device is the second insulated gate bipolar transistor, Described 3rd wholly-controled device is the 3rd insulated gate bipolar transistor;
The emitter stage of described first insulated gate bipolar transistor and described second insulated gate bipolar transistor Emitter stage connects, the colelctor electrode of described second insulated gate bipolar transistor and described 3rd insulated gate bipolar The colelctor electrode of transistor connects;
The positive pole of described first diode is connected with the emitter stage of described first insulated gate bipolar transistor, institute The colelctor electrode of the negative pole and described first insulated gate bipolar transistor of stating the first diode is connected;Described second The positive pole of diode is connected with the emitter stage of described second insulated gate bipolar transistor, described second diode Negative pole be connected with the colelctor electrode of described second insulated gate bipolar transistor;The positive pole of described 3rd diode Being connected with the emitter stage of described 3rd insulated gate bipolar transistor, the negative pole of described 3rd diode is with described The colelctor electrode of the 3rd insulated gate bipolar transistor connects;
The positive pole of described electric capacity is connected with the colelctor electrode of described first insulated gate bipolar transistor, described electric capacity Negative pole be connected with the emitter stage of described 3rd insulated gate bipolar transistor.
8. an inverter, it is characterised in that include first group of three change of current brachium pontis, second group of three change of current Brachium pontis, first group of brachium pontis reactor, second group of brachium pontis reactor, three charging resistors, one group three be isolated Switch and a chopper, the change of current brachium pontis in described first group of change of current brachium pontis and described second group of change of current brachium pontis Bar number be three, the brachium pontis reactance in described first group of brachium pontis reactor and described second group of brachium pontis reactor The number of device is three;
The positive terminal of three change of current brachium pontis in described first group of change of current brachium pontis is all connected to the first junction point, institute The negative pole end stating three change of current brachium pontis in second group of change of current brachium pontis is all connected to the second junction point;
The negative pole end of three change of current brachium pontis in described first group of change of current brachium pontis and described first group of brachium pontis reactor In one end of three brachium pontis reactors connect one to one, three converter bridges in described second group of change of current brachium pontis In the positive terminal of arm and second group of brachium pontis reactor, one end of three brachium pontis reactors connects one to one, described Three brachium pontis in the other end of three brachium pontis reactors and second group of brachium pontis reactor in first group of brachium pontis reactor The other end of reactor connects one to one;
Another of the other end of described first group of three brachium pontis reactor and described second group of three brachium pontis reactor Three junction points that end connects one to one connect one to one with the three-phase of described three-phase isolation switch, described The three-phase of three-phase isolation switch and three described charging resistor one_to_one corresponding are in parallel;
Described chopper is connected between described first junction point and described second junction point;
Any one change of current brachium pontis in described first group of change of current brachium pontis and second group of change of current brachium pontis all includes concatenation Several power models as claimed in any of claims 1 to 7 in one of claims, in previous power model The junction point of one wholly-controled device and the second wholly-controled device and the 3rd wholly-controled device in later power model It is connected with the junction point of described electric capacity, the 3rd wholly-controled device and described electricity in the power model of stem after concatenation The junction point held as the positive terminal of described change of current brachium pontis, in the power model of afterbody the first wholly-controled device with The junction point of the second wholly-controled device is as the negative pole end of described change of current brachium pontis.
CN201620447987.6U 2016-05-17 2016-05-17 Power module and transverter Expired - Fee Related CN205657603U (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109687477A (en) * 2019-02-20 2019-04-26 山东大学 Applied to the basic unit of chain type STATCOM, chain type STATCOM and method

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109687477A (en) * 2019-02-20 2019-04-26 山东大学 Applied to the basic unit of chain type STATCOM, chain type STATCOM and method

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