CN205635852U - Little disk substrate seat of epitaxial furnace - Google Patents
Little disk substrate seat of epitaxial furnace Download PDFInfo
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- CN205635852U CN205635852U CN201620364915.5U CN201620364915U CN205635852U CN 205635852 U CN205635852 U CN 205635852U CN 201620364915 U CN201620364915 U CN 201620364915U CN 205635852 U CN205635852 U CN 205635852U
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- disk platform
- epitaxial
- shallow bid
- limited block
- platform
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Abstract
The utility model discloses a little disk substrate seat of epitaxial furnace, little disk substrate seat middle part is protruding to be formed and is used for growing the rotatable disc platform of wafer of extending, and the periphery of disc platform upper surface is provided with at least three stopper, the stopper forms the circular arc section of matcing with the wafer of extending along protruding and near disc platform center one side of strip that disc platform circumference is extended. On being fixed in the disc platform through the stopper with the substrate, got rid of outer spacing ring, fixed effectual, can effectively prevent the growth course in the wafer substrate fly away from the disc platform.
Description
Technical field
This utility model relates to semiconductor technology, particularly relates to a kind of epitaxial furnace shallow bid pedestal.
Background technology
Epitaxial wafer, such as silicon carbide epitaxy wafer are typically with the method for CVD (chemical gaseous phase deposition) and grow.With
The progress of semiconductor technology, the parameter index of epitaxial wafer is required more and more higher by industry application, and epitaxial wafer gradually exists
Striding forward to thick film large scale direction, this has higher requirement for the uniformity of epitaxial wafer thickness and concentration.In order to obtain relatively
Uniformity in good sheet and between sheet, business-like epitaxial furnace generally uses the mode of shallow bid spinning to carry out epitaxial growth.And,
In order to obtain higher epitaxial thickness within a short period of time, portion of epi stove is by increasing little disc spin speed so that substrate is at height
Speed carries out epitaxial growth under rotating, it is possible to obtain growth rate quickly.These application all propose higher wanting to shallow bid pedestal
Ask.
Current international business epitaxial furnace, as Germany Aixtron company 2400 or 2800 series carbide epitaxial furnace, its
Circular shallow bid just uses planetary arrangement, carries out spinning, it is possible to obtain preferable uniformity while revolving round the sun around big disk center
Distribution.The edge concave downward of shallow bid the outer spacing annulus of configuration, make the upper surface upper surface higher than shallow bid of outer spacing annulus,
Thus substrate is fixed.It is SiC for fixing the substrate outer spacing annulus material in shallow bid card, expensive, and
And along with the increase of growth furnace number, its thickness can be gradually increased, and then epitaxial quality can be affected, so needing in time it to be carried out
Change.Further, since the backing material back side used has carried out optical polish, unusual light, in use find, more
After the outer spacing annulus renewed, substrate is easy to the shallow bid that flies out, and causes growing unsuccessfully, causes the biggest loss.
Utility model content
This utility model provides a kind of epitaxial furnace shallow bid pedestal, which overcomes the weak point existing for prior art.
This utility model solves its technical problem and be the technical scheme is that
A kind of epitaxial furnace shallow bid pedestal, convexes to form the rotatable circular disc for growing epitaxial wafer and puts down in the middle part of described shallow bid pedestal
Platform；The periphery of described disk platform upper surface is provided with at least three limited block, and described limited block is circumferentially extending along disk platform
Strip projected parts and nearly disk Platform center side form the arc section mated with epitaxial wafer.
Preferably, described at least three limited block is arranged along described disk platform periphery equidistant intervals.
Preferably, described limited block nearly disk Platform center side is arc surface, and this arc surface bottom slopes inwardly formation
Angle.
Preferably, the distance of described arc surface top and described disk Platform center is slightly less than the radius of described epitaxial wafer, the end
Hold consistent with the radius of described epitaxial wafer with the distance of described disk Platform center.
Preferably, described limited block is not more than 1mm along a length of 2-8mm of described disk platform circumference, height.
Preferably, described disk platform and limited block outer surface have TaC coating.
Preferably, described disk platform and limited block are one-body molded by graphite.
Compared to prior art, this utility model has the advantages that
1. the periphery at shallow bid base disc platform upper surface arranges at least three limited block, is fixed on by substrate by limited block
On disk platform, eliminate outer spacing ring, good fixing effect, reduce purchase cost；Additionally, without the limit to disk platform
Along carrying out Pocket Machining, the globality making disk platform is higher, beneficially being uniformly distributed of card temperature field.
2. limited block nearly disk Platform center one side lower part slopes inwardly formation chamfering, chamfering top and disk Platform center away from
From being slightly less than the radius of epitaxial wafer, tilting to put into card by epitaxial wafer, a spacing work is played on chamfering top when rotated
With, can effectively prevent substrate abjection from flying away from disk platform, good fixing effect.
3. disk platform and limited block outer surface have TaC coating, and when growing silicon carbide epitaxial wafer, carborundum is difficult to
The deposition attachment of TaC surface, pedestal can be used for multiple times, and does not affect extension effect, reduces growth cost.
Accompanying drawing explanation
Fig. 1 is perspective view of the present utility model；
Fig. 2 is plan structure schematic diagram of the present utility model；
Fig. 3 is the limited block of the present utility model cross section structure schematic diagram in circumference.
Detailed description of the invention
Below in conjunction with drawings and Examples, the present invention is described in further detail.Each accompanying drawing of the present invention is only signal more to hold
The readily apparent present invention, its relative size ratio can be adjusted according to design requirement.Additionally, in figure described in literary composition relatively
The upper and lower relation of element, will be understood that the relative position referring to component those skilled in the art for, the most all can overturn and
Presenting identical component, this all should belong to the scope disclosed by this specification together.
Embodiment, refers to shown in Fig. 1, Fig. 2, a kind of epitaxial furnace shallow bid pedestal, convexes to form for growing extension in the middle part of it
The rotatable circular disc platform 1 of wafer, substrate is positioned on the upper surface of disk platform 1 and with disk platform 1 in growth course
Spinning.The periphery of disk platform 1 upper surface is provided with at least three limited block 2, and limited block 2 is along disk platform 1 circumference
The strip projected parts and the nearly side, disk platform 1 center that extend form the arc section mated with epitaxial wafer.
Described at least three limited block 2 is arranged along disk platform 1 periphery equidistant intervals.With reference to Fig. 3, the nearly disk of limited block 2
(i.e. inner side) is arc surface 21 in Platform center side, and arc surface 21 bottom slopes inwardly formation chamfering 22.Arc surface 21
The distance at top and disk platform 1 center is slightly less than the radius of epitaxial wafer, bottom (i.e. bottom chamfering) and disk platform 1
The distance at center is consistent with the radius of epitaxial wafer.Epitaxial wafer substrate tilting puts into disk platform 1, due to arc surface 21
The distance at top and disk platform 1 center is slightly less than the radius of epitaxial wafer, plays a spacing effect in vertical direction,
Can effectively prevent the movement of epitaxial wafer substrate generation above-below direction；And at least three limited block 2 is in disk platform 1 periphery
Uniformly arrangement can effectively prevent the movement in epitaxial wafer substrate occurred level direction, thus effectively fixes epitaxial wafer, prevents it
Disk platform 1 is flown away from rotary course.
Preferably, side, limited block 2 remote disk platform 1 center (i.e. outside) is the circular arc mated with disk platform 1 periphery
Face, i.e. limited block 2 are circular arc shell of columns, and along a length of 2-8mm of disk platform 1 circumference, height is not more than 1mm, with
Meet the demand of extension wafer size in actual production.Be applicable to the epitaxial furnace that silicon carbide epitaxial wafer grows, disk platform and
Limited block can be one-body molded by graphite, and outer surface is coated with TaC coating, and carborundum is difficult in TaC surface attachment,
Pedestal can repeatedly use.
Above-described embodiment is only used for further illustrating a kind of epitaxial furnace shallow bid pedestal of the present utility model, but this utility model is not
Being confined to embodiment, every any simple modification of being made above example according to technical spirit of the present utility model, equivalent become
Change and modify, each falling within the protection domain of technical solutions of the utility model.
Claims (7)
1. an epitaxial furnace shallow bid pedestal, convexes to form for growing revolving of epitaxial wafer in the middle part of described shallow bid pedestal
Turn disk platform, it is characterised in that: the periphery of described disk platform upper surface is provided with at least three limited block, described
Limited block is to be formed and epitaxial wafer along the circumferentially extending strip projected parts of disk platform and nearly disk Platform center side
The arc section joined.
Epitaxial furnace shallow bid pedestal the most according to claim 1, it is characterised in that: described at least three limited block
Arrange along described disk platform periphery equidistant intervals.
Epitaxial furnace shallow bid pedestal the most according to claim 1, it is characterised in that: the nearly disk of described limited block is put down
Side, platform center is arc surface, and this arc surface bottom slopes inwardly formation chamfering.
Epitaxial furnace shallow bid pedestal the most according to claim 3, it is characterised in that: described arc surface top and institute
The distance stating disk Platform center is slightly less than the distance of the radius of described epitaxial wafer, bottom and described disk Platform center
Consistent with the radius of described epitaxial wafer.
Epitaxial furnace shallow bid pedestal the most according to claim 1, it is characterised in that: described limited block is along described circle
The a length of 2-8mm of dish platform circumference, height is not more than 1mm.
Epitaxial furnace shallow bid pedestal the most according to claim 1, it is characterised in that: described disk platform and spacing
Block outer surface has TaC coating.
Epitaxial furnace shallow bid pedestal the most according to claim 1, it is characterised in that: described disk platform and spacing
Block is one-body molded by graphite.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620364915.5U CN205635852U (en) | 2016-04-27 | 2016-04-27 | Little disk substrate seat of epitaxial furnace |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620364915.5U CN205635852U (en) | 2016-04-27 | 2016-04-27 | Little disk substrate seat of epitaxial furnace |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN205635852U true CN205635852U (en) | 2016-10-12 |
Family
ID=57060169
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201620364915.5U Active CN205635852U (en) | 2016-04-27 | 2016-04-27 | Little disk substrate seat of epitaxial furnace |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN205635852U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107587118A (en) * | 2017-11-02 | 2018-01-16 | 江苏华功半导体有限公司 | A kind of graphite plate |
-
2016
- 2016-04-27 CN CN201620364915.5U patent/CN205635852U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107587118A (en) * | 2017-11-02 | 2018-01-16 | 江苏华功半导体有限公司 | A kind of graphite plate |
| CN107587118B (en) * | 2017-11-02 | 2020-03-03 | 江苏华功半导体有限公司 | Graphite plate |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CP02 | Change in the address of a patent holder |
Address after: 361101 first floor, building B, Jianye Building, No. 96, Xiangxing Road, Xiamen Torch High tech Zone (Xiangjiao) Industrial Zone, Xiamen, Fujian Patentee after: EPIWORLD INTERNATIONAL CO.,LTD. Address before: 361101 room 803, qiangye building, No. 98, Xiangxing Road, Xiang'an District, Xiamen City, Fujian Province (Yucheng center, torch high tech Industrial Park) Patentee before: EPIWORLD INTERNATIONAL CO.,LTD. |
|
| CP02 | Change in the address of a patent holder | ||
| CP01 | Change in the name or title of a patent holder |
Address after: 361101 first floor, building B, Jianye Building, No. 96, Xiangxing Road, Xiamen Torch High tech Zone (Xiangjiao) Industrial Zone, Xiamen, Fujian Patentee after: Hantiantiancheng Electronic Technology (Xiamen) Co.,Ltd. Address before: 361101 first floor, building B, Jianye Building, No. 96, Xiangxing Road, Xiamen Torch High tech Zone (Xiangjiao) Industrial Zone, Xiamen, Fujian Patentee before: EPIWORLD INTERNATIONAL CO.,LTD. |
|
| CP01 | Change in the name or title of a patent holder | ||
| CP02 | Change in the address of a patent holder |
Address after: 1st Floor, Building B, Jianye Building, No. 96 Xiangxing Road, Xiang'an Industrial Zone, Xiamen Torch High tech Zone, Fujian Province, 361101 Patentee after: Hantiantiancheng Electronic Technology (Xiamen) Co.,Ltd. Address before: 361101 first floor, building B, Jianye Building, No. 96, Xiangxing Road, Xiamen Torch High tech Zone (Xiangjiao) Industrial Zone, Xiamen, Fujian Patentee before: Hantiantiancheng Electronic Technology (Xiamen) Co.,Ltd. |
|
| CP02 | Change in the address of a patent holder |