CN207130366U - A kind of epitaxial furnace shallow bid pedestal with spacing disk - Google Patents
A kind of epitaxial furnace shallow bid pedestal with spacing disk Download PDFInfo
- Publication number
- CN207130366U CN207130366U CN201721078400.XU CN201721078400U CN207130366U CN 207130366 U CN207130366 U CN 207130366U CN 201721078400 U CN201721078400 U CN 201721078400U CN 207130366 U CN207130366 U CN 207130366U
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- Prior art keywords
- disk
- shallow bid
- limited block
- epitaxial furnace
- bid pedestal
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Abstract
The utility model discloses a kind of epitaxial furnace shallow bid pedestal with spacing disk, the rotatable circular disc for being used for placing discount vibram outlet shape wafer substrates is provided with the middle part of the shallow bid pedestal, the disc surfaces are provided with an at least limited block in close edge, the intersection of the limited block nearly heart side nearest apart from disc centre and disk is straightway to be matched with the outside of the straight line of the discount vibram outlet shape wafer substrates, when carrying out growth of silicon carbide, disk rotates at a high speed, limited block limits rotation of the substrate relative to disk, i.e. substrate keeps synchronous axial system with disk, avoid the problems such as deposition caused by uncontrollable relative motion is uneven, great properties of product are brought to improve to silicon carbide epitaxy production, be particularly suitable for use in the growth of large size silicon-carbide chip.
Description
Technical field
Epitaxial device is the utility model is related to, more particularly to a kind of epitaxial furnace shallow bid pedestal with spacing disk.
Background technology
Epitaxial wafer, such as silicon carbide epitaxy chip are typically to be grown using CVD (chemical vapor deposition) method.With
The progress of semiconductor technology, industry is applied requires more and more higher to the parameter index of epitaxial wafer, and epitaxial wafer is gradual
Strided forward to thick film large scale direction, this proposes higher requirement for the uniformity of epitaxial wafer thickness and concentration.To be terrible
Uniformity, the mode of commercialized epitaxial furnace generally use shallow bid spinning carry out epitaxial growth in preferable piece and between piece.
Moreover, in order to obtain higher epitaxial thickness within a short period of time, portion of epi stove is by increasing small disc spin speed so that lining
Bottom carries out epitaxial growth in the case where high speed rotates, and can obtain growth rate quickly.These applications all propose to shallow bid pedestal
Higher requirement.
Current international business epitaxial furnace, such as 2400 or 2800 serial carbide epitaxial furnaces of German Aixtron companies,
Silicon carbide substrates are placed on a slightly larger shallow bid of size, and shallow bid uses planetary arrangement, while revolution around big disk center
Spinning is carried out, preferable uniform distribution can be obtained.However, in growth course, control of the shallow bid in device controller
During lower high speed rotation, it is impossible to drive Substrate Synchronous action well, substrate can be caused to produce some not relative to small disc spins
Controllable variable, it is unfavorable for the regulation and control of parameter, has influence on the quality of product.
Utility model content
The utility model provides a kind of epitaxial furnace shallow bid pedestal with spacing disk, which overcomes prior art and is deposited
Weak point.
Technical scheme is used by the utility model solves its technical problem：
A kind of epitaxial furnace shallow bid pedestal with spacing disk, the shallow bid pedestal middle part, which is provided with, to be used to place discount vibram outlet shape crystalline substance
The rotatable circular disc of piece substrate, for the disc surfaces in being provided with an at least limited block close to edge, the limited block distance is round
The intersection of the nearest nearly heart side of disk center and disk is straightway to be matched with outside the straight line of the discount vibram outlet shape wafer substrates
Side.
Optionally, including a plurality of limited blocks, the nearly heart side of those limited blocks and the intersection of disk are positioned at described
On one string of a musical instrument of disc surfaces.
Optionally, including two limited blocks, two limited block are symmetrical in the center line both sides of the string of a musical instrument.
Optionally, two limited block is right angled triangle column structure and short right-angle side is relative, side where long right-angle side
Face is the nearly heart side.
Optionally, the limited block is integrally formed with the disk by graphite.
Optionally, in addition to bezel ring, the disk periphery sink to forming step, and the bezel ring, is on the step and high
Go out the disc surfaces.
Compared to prior art, the utility model has the advantages that：
By the cooperation of disk upper limit position block and discount vibram outlet shape substrate right-angle side, when carrying out growth of silicon carbide, disk is at a high speed
Rotation, limited block limit rotation of the substrate relative to disk, i.e. substrate keeps synchronous axial system with disk, avoids uncontrollable
The problems such as deposition caused by relative motion is uneven, great properties of product are brought to improve to silicon carbide epitaxy production, especially
Suitable for the growth of large size silicon-carbide chip, such as 3 inches, 4 inches and 6 inches etc..
Brief description of the drawings
Fig. 1 is the dimensional structure diagram of disk；
Fig. 2 is the planar structure schematic diagram of disk；
Fig. 3 is the structural representation that substrate coordinates with shallow bid pedestal.
Embodiment
The utility model is described in further detail below in conjunction with drawings and Examples.Each accompanying drawing of the present invention is only to show
To be easier to understand the present invention, its relative size ratio can be adjusted meaning according to design requirement.
Refer to shown in Fig. 1, Fig. 2, a kind of epitaxial furnace shallow bid pedestal with spacing disk, being provided with the middle part of shallow bid pedestal can
Rotating circular disk 1, the surface of disk 1 close to edge in being provided with an at least limited block 11, and the limited block 11 is in disk
The intersection of the nearest nearly heart side of the heart and disc surfaces is straightway a.Specifically, it may include a plurality of limited blocks 11, those are spacing
The nearly heart side of block 11 and the intersection of disk are located along the same line.
In the present embodiment, two limited blocks 11 are set, the two limited blocks 11 are right angled triangle column structures and short straight
Arm of angle interval is oppositely arranged, and side where long right-angle side is the nearly heart side, and two straightway a (long right-angle side) are positioned at same
On straight line, i.e., on a string of a musical instrument of disk 1, and it is symmetrical in the center line both sides of the string of a musical instrument.The disk 1 and limited block 11 by
Graphite is integrally formed, for growing silicon carbide wafer.
With reference to figure 3, shallow bid pedestal also includes bezel ring, 2, and the periphery of disk 1 sinks to being formed step 12, and the bezel ring, 2 is located at described
On step 12 and it is higher by the surface of disk 1.In use, discount vibram outlet shape silicon carbide substrates 3 are positioned within disk 1 and made spacing
The straightway a of block 11 is matched with the outside of the straight line of discount vibram outlet, i.e., substrate 3 is located within the space that bezel ring, 2 and limited block 11 are formed.
When carrying out growth of silicon carbide, disk 1 rotates at a high speed, and limited block 11 limits rotation of the substrate 3 relative to disk 1, i.e. substrate 3
Synchronize rotation with disk 1, avoid the problems such as deposition caused by uncontrollable relative motion is uneven, to carborundum outside
Prolonging production brings great properties of product to improve, the growth for the large size silicon-carbide chip that is particularly suitable for use in, such as 3 inches, 4 inches
With 6 inches etc..
In addition, by above-mentioned standoff features and the design of distribution, the uniformity of stress is on the one hand improved, is avoided to lining
The damage at bottom；On the other hand reduce the abrasion and deformation of limited block, saved the materials of limited block and improved service life.
Above-described embodiment is only used for further illustrating a kind of epitaxial furnace shallow bid base with spacing disk of the present utility model
Seat, but the utility model is not limited to embodiment, it is every that above example is made according to the technical essence of the utility model
Any simple modification, equivalent change and modification, each fall within the protection domain of technical solutions of the utility model.
Claims (6)
- A kind of 1. epitaxial furnace shallow bid pedestal with spacing disk, it is characterised in that：It is provided with the middle part of the shallow bid pedestal and is used to put The rotatable circular disc of discount vibram outlet shape wafer substrates is put, the disc surfaces are provided with an at least limited block, the limit in close edge The intersection of the position block nearly heart side nearest apart from disc centre and disk is straightway to be matched with the discount vibram outlet shape wafer substrates Straight line on the outside of.
- 2. the epitaxial furnace shallow bid pedestal according to claim 1 with spacing disk, it is characterised in that：Including a plurality of institutes Limited block is stated, the nearly heart side of those limited blocks and the intersection of disk are located on a string of a musical instrument of the disc surfaces.
- 3. the epitaxial furnace shallow bid pedestal according to claim 2 with spacing disk, it is characterised in that：Including described in two Limited block, two limited block are symmetrical in the center line both sides of the string of a musical instrument.
- 4. the epitaxial furnace shallow bid pedestal according to claim 3 with spacing disk, it is characterised in that：Two limited block For right angled triangle column structure and short right-angle side it is relative, side where long right-angle side is the nearly heart side.
- 5. the epitaxial furnace shallow bid pedestal according to claim 1 with spacing disk, it is characterised in that：The limited block with The disk is integrally formed by graphite.
- 6. the epitaxial furnace shallow bid pedestal according to claim 1 with spacing disk, it is characterised in that：Also include bezel ring, The disk periphery sinks to forming step, and the bezel ring, is located on the step and is higher by the disc surfaces.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201721078400.XU CN207130366U (en) | 2017-08-25 | 2017-08-25 | A kind of epitaxial furnace shallow bid pedestal with spacing disk |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201721078400.XU CN207130366U (en) | 2017-08-25 | 2017-08-25 | A kind of epitaxial furnace shallow bid pedestal with spacing disk |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN207130366U true CN207130366U (en) | 2018-03-23 |
Family
ID=61636363
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201721078400.XU Active CN207130366U (en) | 2017-08-25 | 2017-08-25 | A kind of epitaxial furnace shallow bid pedestal with spacing disk |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN207130366U (en) |
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2017
- 2017-08-25 CN CN201721078400.XU patent/CN207130366U/en active Active
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CP02 | Change in the address of a patent holder |
Address after: 361000 first floor, building B, Jianye Building, No. 96, Xiangxing Road, Xiamen Torch High tech Zone (Xiangjiao) Industrial Zone, Xiamen, Fujian Patentee after: EPIWORLD INTERNATIONAL CO.,LTD. Address before: Room 803, qiangye building, 98 Xiangxing Road, Xiang'an District, Xiamen City, Fujian Province, 361000 Patentee before: EPIWORLD INTERNATIONAL CO.,LTD. |
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| CP02 | Change in the address of a patent holder | ||
| CP01 | Change in the name or title of a patent holder |
Address after: 361000 first floor, building B, Jianye Building, No. 96, Xiangxing Road, Xiamen Torch High tech Zone (Xiangjiao) Industrial Zone, Xiamen, Fujian Patentee after: Hantiantiancheng Electronic Technology (Xiamen) Co.,Ltd. Address before: 361000 first floor, building B, Jianye Building, No. 96, Xiangxing Road, Xiamen Torch High tech Zone (Xiangjiao) Industrial Zone, Xiamen, Fujian Patentee before: EPIWORLD INTERNATIONAL CO.,LTD. |
|
| CP01 | Change in the name or title of a patent holder | ||
| CP02 | Change in the address of a patent holder |
Address after: 361000 first floor, building B, Jianye Building, No. 96, Xiangxing Road, Xiamen Torch High tech Zone (Xiang'an) Industrial Zone, Xiamen, Fujian Patentee after: Hantiantiancheng Electronic Technology (Xiamen) Co.,Ltd. Address before: 361000 first floor, building B, Jianye Building, No. 96, Xiangxing Road, Xiamen Torch High tech Zone (Xiangjiao) Industrial Zone, Xiamen, Fujian Patentee before: Hantiantiancheng Electronic Technology (Xiamen) Co.,Ltd. |
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| CP02 | Change in the address of a patent holder |