CN205621835U - Microwave voltage control attenuator and packaging structure with frequency control on a large scale - Google Patents
Microwave voltage control attenuator and packaging structure with frequency control on a large scale Download PDFInfo
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- CN205621835U CN205621835U CN201620420768.9U CN201620420768U CN205621835U CN 205621835 U CN205621835 U CN 205621835U CN 201620420768 U CN201620420768 U CN 201620420768U CN 205621835 U CN205621835 U CN 205621835U
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Abstract
The utility model discloses a microwave voltage control attenuator and packaging structure with frequency control on a large scale, microwave signal input part is connected with a single -pole double -throw's input, a single -pole double -throw's the first output and the input of passageway no. 1 are connected, the second output is connected with the input of passageway no. 2, the output and the 2nd single -pole double -throw's the first input end of passageway no. 1 are connected, the output of passageway no. 2 is connected with the 2nd single -pole double -throw's second input, the 2nd single -pole double -throw's output and microwave signal output part are connected, above -mentioned device is all placed in the attenuator cavity and is placed through a minute chamber, adopt glass insulator to connect between each device, each minute chamber all is provided with independent apron, control signal line and power cord pass through feedthrough capacitor and insert each device, it can not obtain little decrement or 0dB insertion loss to have solved the voltage -controlled chip of microwave, the output signal energy is very faint when the decrement is big, receive technical problem such as interference very easily.
Description
Technical field
This utility model belongs to microwave attenuator technical field, particularly relates to a kind of microwave voltage-controlled attenuator with power adjustments on a large scale and encapsulating structure.
Background technology
Microwave attenuator is a kind of conventional microwave equipment, and it is typically inserted between signal source and load, for regulating the size of signal, is used widely in the fields such as radar, communication, remote measurement and various instrument and instrument.Development along with microwave technology, it is desirable to equipment has digitized, intelligentized design, increases radio frequency and the measuring accuracy of microwave test system and motility.
Microwave voltage-controlled attenuator has the features such as miniaturization, low-power consumption, high reliability, and it has the features such as more high speed, digitized, intellectuality, volume be little compared to mechanical conditioning type attenuator；It has more highly attenuating precision and less decay stepping compared to numerical-control attenuator.
Due to single voltage-controlled decay chip, to be limited its attenuation by semiconductor technology limited, then need to use multiple decay chip cascade to obtain bigger attenuation, but intrinsic insertion loss can be caused after chip cascade to increase, cause just cannot realizing when needs obtain little attenuation or 0dB decay；And after attenuation is very big, output signal energy is the faintest, the highest to the shielding requirements of cavity.
Utility model content
The technical problems to be solved in the utility model: provide a kind of microwave voltage-controlled attenuator with power adjustments on a large scale and encapsulating structure, can not obtain little attenuation or 0dB insertion loss solving the voltage-controlled chip of prior art microwave；And after attenuation is very big, output signal energy is the faintest, it is easy to the technical problem such as be interfered.
Technical solutions of the utility model:
A kind of microwave voltage-controlled attenuator with power adjustments on a large scale, it includes microwave input signal end, the input of microwave signal input and the first single-pole double-throw switch (SPDT) connects, first outfan of the first single-pole double-throw switch (SPDT) is connected with the input of passage one, second outfan is connected with the input of passage two, the outfan of passage one and the first input end of the second single-pole double-throw switch (SPDT) connect, the outfan of passage two and the second input of the second single-pole double-throw switch (SPDT) connect, and the outfan of the second single-pole double-throw switch (SPDT) is connected with microwave signal outfan.
Described passage two includes n voltage-controlled decay chip, n voltage-controlled decay chip-in series, and n value takes 3～5, and the attenuation of described n voltage-controlled decay chip is by External Control Voltage control.
Described passage one includes that the first voltage-controlled decay chip, the first voltage-controlled decay chip are connected with microwave amplifier, and the attenuation of described first voltage-controlled decay chip is by External Control Voltage control.
Place in the individual voltage-controlled decay chip of described first single-pole double-throw switch (SPDT), the second single-pole double-throw switch (SPDT), n, the first voltage-controlled decay chip and microwave amplifier are both placed in attenuator cavity (1) and by a point chamber (3), glass insulator (6) is used to connect between each device, each point of chamber (3) is provided with independent cover plate (2), control signal wire and power line and accesses each device by feedthrough capacitor (5).
Described glass insulator (6) is arranged in plate (4).
The beneficial effects of the utility model:
This utility model microwave power attenuator uses dual pathways design, passage one is that voltage-controlled decay chip cascades with microwave amplifier, realize the regulation of little attenuation, and power gain can be obtained, the intrinsic differential loss of voltage-controlled decay chip is compensated by loading a microwave amplifier, achieving 0dB insertion loss and even obtain power gain, add the power regulating range of attenuator, the attenuation of the most voltage-controlled decay chip is by External Control Voltage control；Passage two is realized the regulation of big attenuation by n voltage-controlled decay chip cascade, the attenuation of voltage-controlled decay chip is by External Control Voltage control, signal output part the second microwave single-pole double-throw switch (SPDT) is externally controlled word control, the signal output of selector channel one or passage two, this utility model is loaded with a microwave amplifier in passage one, compensate for the intrinsic differential loss of voltage-controlled decay chip, improve the output of passage when powering up work, during not powered work, also add the Signal segregation degree of passage one.
When the attenuation pressing microwave voltage-controlled attenuator is the biggest, the energy of output signal is the faintest, it is highly susceptible to interference, this utility model is placed by using chip point chamber and is interconnected by glass insulator, ensure that the Signal segregation degree between each chip, reduce spatial microwave crosstalk, improve capacity of resisting disturbance.
Feature of the present utility model: one be have precision high, at a high speed, intelligent, digitized and the feature such as volume is little；Two is by using dual signal passage to design, compensate for the deficiency of voltage-controlled decay chip, extend voltage-controlled attenuator power regulating range；Three is to use a point chamber isolation between voltage-controlled decay chip, uses glass insulator interconnection technique, it is ensured that small-signal attenuation accuracy, improves device capacity of resisting disturbance；Solve the voltage-controlled chip of prior art microwave and can not obtain little attenuation or 0dB insertion loss；And after attenuation is very big, output signal energy is the faintest, it is easy to the technical problem such as be interfered.
Accompanying drawing illustrates:
Fig. 1 is this utility model theory structure schematic diagram；
Fig. 2 is this utility model encapsulating structure schematic diagram.
Detailed description of the invention
A kind of microwave voltage-controlled attenuator with power adjustments on a large scale, it includes microwave input signal end, the input of microwave signal input and the first single-pole double-throw switch (SPDT) connects, first outfan of the first single-pole double-throw switch (SPDT) is connected with the input of passage one, second outfan is connected with the input of passage two, the outfan of passage one and the first input end of the second single-pole double-throw switch (SPDT) connect, the outfan of passage two and the second input of the second single-pole double-throw switch (SPDT) connect, and the outfan of the second single-pole double-throw switch (SPDT) is connected with microwave signal outfan.
Described passage two includes n voltage-controlled decay chip, this n voltage-controlled decay chip-in series, and n value takes 3～5, and the attenuation of described n voltage-controlled decay chip is by External Control Voltage control.
Described passage one includes that the first voltage-controlled decay chip, the first voltage-controlled decay chip are connected with microwave amplifier, and the attenuation of described first voltage-controlled decay chip is by External Control Voltage control.
In the individual voltage-controlled decay chip of described first single-pole double-throw switch (SPDT), the second single-pole double-throw switch (SPDT), n, the first voltage-controlled decay chip and microwave amplifier are both placed in attenuator cavity 1 and placed by point chamber 3, using glass insulator 6 to connect between each device, each point of chamber 3 is provided with independent cover plate 2.
Control signal wire and power line access each device by feedthrough capacitor 5.
Described glass insulator 6 is arranged in plate 4.
Claims (5)
1. a microwave voltage-controlled attenuator with power adjustments on a large scale, it includes microwave input signal end, it is characterized in that: the input of microwave signal input and the first single-pole double-throw switch (SPDT) connects, first outfan of the first single-pole double-throw switch (SPDT) is connected with the input of passage one, second outfan is connected with the input of passage two, the outfan of passage one and the first input end of the second single-pole double-throw switch (SPDT) connect, the outfan of passage two and the second input of the second single-pole double-throw switch (SPDT) connect, and the outfan of the second single-pole double-throw switch (SPDT) is connected with microwave signal outfan.
A kind of microwave voltage-controlled attenuator with power adjustments on a large scale the most according to claim 1, it is characterized in that: described passage two includes n voltage-controlled decay chip, n voltage-controlled decay chip-in series, n value takes 3～5, and the attenuation of described n voltage-controlled decay chip is by External Control Voltage control.
A kind of microwave voltage-controlled attenuator with power adjustments on a large scale the most according to claim 1, it is characterized in that: described passage one includes the first voltage-controlled decay chip, first voltage-controlled decay chip is connected with microwave amplifier, and the attenuation of described first voltage-controlled decay chip is by External Control Voltage control.
4. the encapsulating structure of a kind of microwave voltage-controlled attenuator with power adjustments on a large scale as described in claim 1-3, it is characterized in that: place in the individual voltage-controlled decay chip of described first single-pole double-throw switch (SPDT), the second single-pole double-throw switch (SPDT), n, the first voltage-controlled decay chip and microwave amplifier are both placed in attenuator cavity (1) and by a point chamber (3), glass insulator (6) is used to connect between each device, each point of chamber (3) is provided with independent cover plate (2), control signal wire and power line and accesses each device by feedthrough capacitor (5).
Encapsulating structure the most according to claim 4, it is characterised in that: described glass insulator (6) is arranged in plate (4).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620420768.9U CN205621835U (en) | 2016-05-11 | 2016-05-11 | Microwave voltage control attenuator and packaging structure with frequency control on a large scale |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620420768.9U CN205621835U (en) | 2016-05-11 | 2016-05-11 | Microwave voltage control attenuator and packaging structure with frequency control on a large scale |
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| CN205621835U true CN205621835U (en) | 2016-10-05 |
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| CN201620420768.9U Active CN205621835U (en) | 2016-05-11 | 2016-05-11 | Microwave voltage control attenuator and packaging structure with frequency control on a large scale |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107370471A (en) * | 2017-06-29 | 2017-11-21 | 中国电子科技集团公司第四十研究所 | A kind of PXI bus programmables amplification/attenuation device and its calibration method |
-
2016
- 2016-05-11 CN CN201620420768.9U patent/CN205621835U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107370471A (en) * | 2017-06-29 | 2017-11-21 | 中国电子科技集团公司第四十研究所 | A kind of PXI bus programmables amplification/attenuation device and its calibration method |
| CN107370471B (en) * | 2017-06-29 | 2020-06-05 | 中国电子科技集团公司第四十一研究所 | PXI bus programmable amplifier/attenuator and calibration method thereof |
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