CN205603722U - Can effectively reduce thermal stress differences of value crucible between sapphire single crystal - Google Patents
Can effectively reduce thermal stress differences of value crucible between sapphire single crystal Download PDFInfo
- Publication number
- CN205603722U CN205603722U CN201620277579.0U CN201620277579U CN205603722U CN 205603722 U CN205603722 U CN 205603722U CN 201620277579 U CN201620277579 U CN 201620277579U CN 205603722 U CN205603722 U CN 205603722U
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- Prior art keywords
- crucible
- thermal stress
- sapphire single
- crystal
- effectively reduce
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000013078 crystal Substances 0.000 title claims abstract description 40
- 229910052594 sapphire Inorganic materials 0.000 title claims abstract description 40
- 239000010980 sapphire Substances 0.000 title claims abstract description 40
- 230000008646 thermal stress Effects 0.000 title claims abstract description 25
- 230000009286 beneficial effect Effects 0.000 abstract 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 4
- 229910052750 molybdenum Inorganic materials 0.000 description 4
- 239000011733 molybdenum Substances 0.000 description 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 239000010937 tungsten Substances 0.000 description 3
- 238000005336 cracking Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 208000036626 Mental retardation Diseases 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
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- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The utility model discloses a can effectively reduce thermal stress differences of value crucible between sapphire single crystal, it includes crucible body (1), the inside wall of crucible body (1) on seted up a plurality of recesses. The beneficial effects of the utility model are that: the recess can increase the deformation volume of crucible, reduced the intergranular thermal stress difference of crucible and sapphire list, and remaining thermal stress only acts on the crystal surface, does not influence the whole quality of sapphire single crystal to the effectual yield that has promoted the quality of sapphire single crystal and improved the sapphire monocrystal, thereby the cost is reduced.
Description
Technical field
This utility model relates to crucible, a kind of can effectively reduce the crucible of thermal stress difference between sapphire single-crystal.
Background technology
The crucible of current major diameter sapphire production and application is all molybdenum or tungsten material, because tungsten and molybdenum material is different with the thermal coefficient of expansion of sapphire single-crystal, crucible edge is made to be easily generated thermal stress, grow sapphire single-crystal outside easy to crack, major diameter sapphire crystal is typically more than 50 kilograms, unit value is high, growth cycle is long, and crystal outer serious cracking affects quality and the cost of product.
Method prepared by major diameter sapphire is a growth and the process simultaneously carried out of annealing, and growth progressively drops to room temperature from 2050 degree after stopping, after temperature is reduced to room temperature, because of crystal outer cracking when thermal coefficient of expansion inconsistent separation crucible and crystal.As shown in Figure 1, the tungsten and molybdenum crucible now used is the circle of standard of comparison and inwall is smooth, molybdenum crucible and sapphire single-crystal are when growth course thermal coefficient of expansion different and deformation quantity is different, sapphire character cannot change, it is thus desirable to the form of change crucible, increase the deformation quantity of crucible, reduce the thermal stress difference between crucible and sapphire single-crystal, remaining power acts only on plane of crystal, does not affect the total quality of sapphire single-crystal.
Utility model content
The purpose of this utility model is to overcome the shortcoming of prior art, it is provided that a kind of deformation quantity is big, yield rate is high and cost mental retardation effectively reduces the crucible of thermal stress difference between sapphire single-crystal.
The purpose of this utility model is achieved through the following technical solutions: a kind of can effectively reduce the crucible of thermal stress difference between sapphire single-crystal, and it includes crucible body, and the medial wall of described crucible body offers multiple groove.
Described crucible body is cylinder.
Described groove is evenly distributed on the medial wall of crucible body.
Described groove is V-shaped groove.
Described adjacent V-shaped groove connects, and all of V-shaped groove constitutes the annular of a closing.
Described groove is arcuate groove.
Described adjacent arcuate groove connects, and all of arcuate groove constitutes the annular of a closing.
This utility model has the advantage that crucible of the present utility model, the medial wall of crucible is provided with groove, groove can increase the deformation quantity of crucible, decrease the thermal stress difference between crucible and sapphire single-crystal, and remaining thermal stress acts only on plane of crystal, do not affect the total quality of sapphire single-crystal, thus effectively improve the quality of sapphire single-crystal and improve the yield rate of sapphire monocrystal, thus reduce cost.
Accompanying drawing explanation
Fig. 1 is the schematic top plan view of existing crucible；
Fig. 2 is the schematic top plan view of embodiment one；
Fig. 3 is the schematic top plan view of embodiment two；
In figure, 1-crucible body, 2-V shape groove, 3-arcuate groove.
Detailed description of the invention
Being further described this utility model below in conjunction with the accompanying drawings, protection domain of the present utility model is not limited to the following stated:
Embodiment one:
As shown in Figure 2, a kind of can effectively reduce the crucible of thermal stress difference between sapphire single-crystal, it includes crucible body 1, multiple groove is offered on the medial wall of described crucible body 1, in the present embodiment, described crucible body 1 is cylinder, described groove is evenly distributed on the medial wall of crucible body 1, further, described groove is V-shaped groove 2, described adjacent V-shaped groove 2 connects, and all of V-shaped groove 2 constitutes the annular of a closing, V-shaped groove 2 adds the deformation quantity of crucible, decrease the thermal stress difference between crucible and sapphire single-crystal, and remaining thermal stress acts only on plane of crystal, do not affect the total quality of sapphire single-crystal, thus effectively improve the quality of sapphire single-crystal and improve the yield rate of sapphire monocrystal, thus reduce cost.
Embodiment two:
As shown in Figure 3, a kind of can effectively reduce the crucible of thermal stress difference between sapphire single-crystal, it includes crucible body 1, multiple groove is offered on the medial wall of described crucible body 1, in the present embodiment, described crucible body 1 is cylinder, described groove is evenly distributed on the medial wall of crucible body 1, further, described groove is arcuate groove 3, described adjacent arcuate groove 3 connects, and all of arcuate groove 3 constitutes the annular of a closing, arcuate groove 3 adds the deformation quantity of crucible, decrease the thermal stress difference between crucible and sapphire single-crystal, and remaining thermal stress acts only on plane of crystal, do not affect the total quality of sapphire single-crystal, thus effectively improve the quality of sapphire single-crystal and improve the yield rate of sapphire monocrystal, thus reduce cost.
Claims (7)
1. one kind can effectively be reduced the crucible of thermal stress difference between sapphire single-crystal, it is characterised in that: it includes crucible body (1), and the medial wall of described crucible body (1) offers multiple groove.
The most according to claim 1 a kind of can effectively reduce the crucible of thermal stress difference between sapphire single-crystal, it is characterised in that: described crucible body (1) is cylinder.
The most according to claim 1 and 2 a kind of can effectively reduce the crucible of thermal stress difference between sapphire single-crystal, it is characterised in that: described groove is evenly distributed on the medial wall of crucible body (1).
The most according to claim 3 a kind of can effectively reduce the crucible of thermal stress difference between sapphire single-crystal, it is characterised in that: described groove is V-shaped groove (2).
The most according to claim 4 a kind of can effectively reduce the crucible of thermal stress difference between sapphire single-crystal, it is characterised in that: described adjacent V-shaped groove (2) connects, and all of V-shaped groove (2) constitutes the annular of a closing.
The most according to claim 3 a kind of can effectively reduce the crucible of thermal stress difference between sapphire single-crystal, it is characterised in that: described groove is arcuate groove (3).
The most according to claim 4 a kind of can effectively reduce the crucible of thermal stress difference between sapphire single-crystal, it is characterised in that: described adjacent arcuate groove (3) connects, and all of arcuate groove (3) constitutes the annular of a closing.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620277579.0U CN205603722U (en) | 2016-04-06 | 2016-04-06 | Can effectively reduce thermal stress differences of value crucible between sapphire single crystal |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620277579.0U CN205603722U (en) | 2016-04-06 | 2016-04-06 | Can effectively reduce thermal stress differences of value crucible between sapphire single crystal |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN205603722U true CN205603722U (en) | 2016-09-28 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201620277579.0U Expired - Fee Related CN205603722U (en) | 2016-04-06 | 2016-04-06 | Can effectively reduce thermal stress differences of value crucible between sapphire single crystal |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN205603722U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107287652A (en) * | 2017-05-29 | 2017-10-24 | 德令哈晶辉石英材料有限公司 | A kind of silica crucible for suppressing melting silicon liquid level vibration and preparation method thereof |
-
2016
- 2016-04-06 CN CN201620277579.0U patent/CN205603722U/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107287652A (en) * | 2017-05-29 | 2017-10-24 | 德令哈晶辉石英材料有限公司 | A kind of silica crucible for suppressing melting silicon liquid level vibration and preparation method thereof |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20160928 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |