CN205603669U - Device suitable for local growth film and coating - Google Patents
Device suitable for local growth film and coating Download PDFInfo
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- CN205603669U CN205603669U CN201620333971.2U CN201620333971U CN205603669U CN 205603669 U CN205603669 U CN 205603669U CN 201620333971 U CN201620333971 U CN 201620333971U CN 205603669 U CN205603669 U CN 205603669U
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Abstract
The utility model relates to a device suitable for local growth film and coating. Adopt this device, on the laser source waited to grow the region of film and/or coating with the light beam direct irradiation to the matrix surface, the surface heating in the region of film and/or coating of will waiting to grow was to setting for the temperature, the region of the gas outlet of controlling means control of gases blowout device and wait to grow film and/or coating surperficial corresponding, with gas reaction thing from gaseous storage tank output, through gas pipe line arrival gas blow -out device to spray the matrix surface from the gas outlet, the biological chemistry reaction is sent out at the matrix surface of heating to the gas reaction thing, and the solid products deposit of formation forms film and/or coating in the matrix surface. The utility model discloses the creation can realize having practiced thrift the raw materials greatly in the local region growing film and the coating of base member, has protected the environment.
Description
Technical field
The invention relates to a kind of applied chemistry gas phase deposition technology and metal, nonmetal or semi-conducting material is directly beaten
The device and method being imprinted on matrix surface.
Background technology
Chemical gaseous phase deposition (Chemical Vapor Deposition) (CVD) method is utilized to grow on matrix surface
Metal, nonmetal and semiconductive thin film or the method for coating, well-known.In traditional chemical gaseous phase deposition (CVD)
During, there is chemical reaction in chemical reactant on the integral surface of heated matrix, by product after chemical reaction
It is deposited on the integral surface of heating.So, if whole surface need not be covered by chemical product, then be accomplished by complexity
Masterplate or photoresist (photoresist) operation complete face coat work, operation complexity.It is additionally, since and need not cover
The place of lid is the most capped in spraying process, adds the demand of chemical reaction gas, waste in chemical gaseous phase deposition
Raw material.Meanwhile, consequent chemical by-product also increases, to environment.
Summary of the invention
The invention propose a kind of improve how by metal, nonmetal and semi-conducting material is on matrix surface
Local growth thin film and the apparatus and method of coating.
The invention the technical scheme is that a kind of device being applicable to local growth thin film and coating:
It is provided with the Dewar vessel that vacuum space is provided.
It is provided with and is arranged in Dewar vessel, for placing the support of matrix.
It is provided with and is arranged in Dewar vessel, for providing thermal source to the region of matrix surface local growth thin film or coating
Lasing light emitter.
It is provided with and is arranged in Dewar vessel, for anti-to the region blowing gas of matrix surface local growth thin film or coating
Answer the gas discharge device of thing.
Being provided with one or several are for transmitting the gas line of gas reactant, gas line one end sprays with gas
Device connects, and the other end stretches out Dewar vessel and is connected with the gaseous storage tank for stored gas reactant；At gas line and
It is provided with flow valve between gaseous storage tank.
It is provided with and is connected with Dewar vessel, include acidic by-products that alkali compounds produces after neutralizing reaction or include
Molecular sieve is for being adsorbed with the defecator of poisonous gas；Defecator is connected with vacuum pump.
It is provided with mechanical hand I, mechanical hand I to be connected with lasing light emitter and gas discharge device, or mechanical hand I is connected with support.
It is provided with control device, controls device and control flow valve；Control device and control lasing light emitter and gas spray by mechanical hand I
Go out device to move relative to matrix, or control device by mechanical hand I control support control matrix relative to lasing light emitter and
Gas discharge device moves.
Above-mentioned a kind of device being applicable to local growth thin film and coating, described gas discharge device is that one end is provided with
The nozzle of gas outlet, the port of export of each gas line is respectively mounted a nozzle.
Above-mentioned a kind of device being applicable to local growth thin film and coating, described gas discharge device is: taper master
The internal dividing plate that is provided with, dividing plate will be separated into two gas flow cavities in cone body, two gas flow cavities are at gas outlet end
Joining, each gas flow cavity connects a gas line.
Above-mentioned a kind of device being applicable to local growth thin film and coating, described gas discharge device is: gas collection
Stream cavity configuration is provided with some groups of gas nozzle heads, and often group gas nozzle head is by two symmetrically arranged gas flow channel structures
Becoming, one end of each gas flow channel is connected with gas line, and the other end is gas outlet.
Above-mentioned a kind of device being applicable to local growth thin film and coating, is provided with metal storage tank, and metal storage tank is pacified
Being contained between gaseous storage tank and gas line, metal storage tank is externally provided with heater I, at the gas being connected with metal storage tank
Fluid line is externally provided with heating device II.
Above-mentioned a kind of device being applicable to local growth thin film and coating, is provided with excimer laser instrument and mechanical hand II,
Control device to be moved relative to matrix by mechanical hand II control excimer laser instrument.
Above-mentioned a kind of device being applicable to local growth thin film and coating, is provided with template, and template is movably arranged on matrix
And between gas discharge device, have the window corresponding with thin film to be deposited and coating patterns.
Above-mentioned a kind of device being applicable to local growth thin film and coating, the outer rim of described gas discharge device is provided with
Thermal insulation layer.
A kind of local growth thin film and the method for coating, comprise the steps:
1) control device control lasing light emitter and light beam is shone directly into matrix surface local growth thin film or the region of coating
On, the surface of local growth thin film and the region of coating is heated to design temperature；
2) control device and control gas outlet and local growth thin film or the surface in the region of coating of gas discharge device
Corresponding；
3) gas reactant is exported from gaseous storage tank, arrive gas discharge device through gas line, and go out from gas
Mouth winding-up is to matrix surface, and gas reactant occurs chemical reaction on the matrix surface of heating, and the solid product of generation deposits
Thin film and/or coating is formed in matrix surface.
Above-mentioned a kind of local growth thin film and the method for coating, described gas reactant is sent out at the matrix surface of heating
Biochemical reaction is: the first gas reactant containing metal occurs at the matrix surface of heating with the second gas reactant
Redox reaction, described the first gas reactant containing metal is MXn, M be tungsten, molybdenum, tantalum, titanium, rhenium, niobium, nickel or
Hafnium, X is halogen, and n is 5 and 6, and the second gas reactant is hydrogen, oxygen, nitrogen or ammonia；Or, containing metal and
Nonmetallic gas reactant is decomposed reaction at the matrix surface of heating, and described is anti-containing metal and nonmetallic gas
Answering thing is MmXn, and M is Al, Ti, Pb, Mo, Fe, Ni, B, Zr, C, Si, Ge, Mn or Ga, and X is H, O or N, m and n is the whole of 1-5
Number.
The invention provides the benefit that: the invention propose a kind of improve how by metal, nonmetal
And the apparatus and method that semi-conducting material grows on matrix surface.Apparatus and method described herein refer on matrix surface
Local deposits metal, nonmetal and semiconductor material thin film or coating, chemical reaction is limited in relatively small by it
Its chemical reaction process is completed in region.This method is different from traditional chemical deposition coating process.First, it utilizes and swashs
Matrix surface is heated to occur the temperature of chemical reaction by light, and then reacting gas is directly blown onto heating by gas outlet
Matrix surface on bring it about reaction, the chemical product of solid will deposit to be formed on surface thin film or coating.The present invention
Create the apparatus and method shown and can need not the help of photoresist (photoresist) technique to obtain metal, non-gold
Belong to and semiconductor material thin film or coating.Further, owing to chemical reaction is to occur in local surfaces, therefore can be maximum
Limit ground reduces the demand of chemical reaction gas in chemical gaseous phase deposition, and consequent chemical by-product is also lowered to
Minimum level, thus effect on environment is minimum.
Accompanying drawing explanation
Fig. 1 is the structural representation of the invention.
Fig. 2 is the structural representation of the first gas discharge device of the invention.
Fig. 3 is the structural representation of the invention the second gas discharge device.
Fig. 4 is the structural representation of the third gas discharge device of the invention.
Fig. 5 is the top view of Fig. 4.
Fig. 6 is the upward view of Fig. 4.
Fig. 7 is the attachment structure schematic diagram of the third gas discharge device of the invention.
Fig. 8 is the operating diagram of the invention.
Fig. 9 is the operating diagram of the invention.
Detailed description of the invention
Embodiment 1 one kinds is applicable to the device of local growth thin film and coating
As shown in Fig. 1-Fig. 7, a kind of device being applicable to local growth thin film and coating, there is following structure:
The main body of a kind of device being applicable to local growth thin film and coating is made up of Dewar vessel 1.Protect in Dewar vessel 1
Hold vacuum state.One or two oil-sealed rotary pumps just can produce enough vacuum.Vacuum is according to not synsedimentary thin film
Or the performance requirement of coating controls in 25 torr (Torr) to 0.001 torr (Torr) scope or more condition of high vacuum degree.
Metal, nonmetal or semi-conducting material need to be printed by this device or be deposited on matrix 4 surface, so
Matrix 4 needs to be placed in Dewar vessel 1.According to like this, the internal needs of Dewar vessel 1 is installed for placing matrix 4
Support 2；Generally can place multiple matrix 4 in Dewar vessel 1 to carry out depositing coating process operation simultaneously.Therefore, vacuum
Container 1 can include multiple support 2.
This device is used for matrix 4 surface local growth thin film or the district of coating including at least one in Dewar vessel 1
Territory provides the lasing light emitter 3 of thermal source.Lasing light emitter 3 is placed on matrix 4 surface, can be close to gas discharge device.So, swash
Light source 3 can be with the region of specific dimensions on heated substrate surface.Lasing light emitter 3 can be selected from existing lasing light emitter product.Swash
The district needing local growth thin film or coating on matrix surface is depended in the selection of the kind of light heating and the energy of laser
The temperature height that territory is to be reached.In one embodiment, lasing light emitter 3 can join with gas line 5 or gas discharge device
Being connected together, so they just can coordinate controllably to move on matrix surface together.Lasing light emitter 3 can also be with gas line
5 or gas discharge device separately, such lasing light emitter can arrive uniform temperature, then gas ejection dress in first heated substrate surface
Put and moving to warmed-up region on matrix surface, then spray reacting gas, deposit coating.
In Dewar vessel 1, it is provided with for the region blowing gas reaction of matrix 4 surface local growth thin film or coating
The gas discharge device of thing.It is provided with one or several are for transmitting the gas line 5 of gas reactant, gas line 5 one
End is connected with gas discharge device, and the other end stretches out Dewar vessel 1 with the gaseous storage tank 6 for stored gas reactant even
Connect；Flow valve 7 it is provided with between gas line 5 and gas storage tank 6.
One or more gas lines 5 are connected with gas discharge device, and gas reactant is directed to by gas discharge device
On matrix surface in Dewar vessel 1.
In one embodiment, first and second kinds of gas reactants arrive matrix surface by gas outlet 18 winding-up
On.As in figure 2 it is shown, described gas discharge device is: be provided with dividing plate 14 in cone body 13, dividing plate 14 is by cone body 13
Being separated into two gas flow cavities, two gas flow cavities are joined at gas outlet 18 end, and each gas flow cavity connects one
Gas line 5.This kind of structure, first and second kinds of gas reactants were just mixed with before arriving gas outlet 18, it is ensured that
Gas reactant can contact with the matrix surface specified fully continuously.The diameter of gas outlet 18 can be micron-sized, it is possible to
To be grade or Centimeter Level, this to determine according to deposition film dimensions size.
In one embodiment, first and second kinds of gas reactants can also be sprayed by respective gas outlet 18 respectively
Blow on matrix surface.It is provided with the nozzle 12 of gas outlet 18 as it is shown on figure 3, described gas discharge device is one end, each
The port of export of gas line 5 all installs a nozzle 12.The mutual angle of two nozzles is 0 degree to 60 degree scope.
In one embodiment, gas reactant is jetted on matrix surface by multiple gas outlets 18.Such as Fig. 4-Fig. 7
Shown in, described gas discharge device is: gas manifold structure 15 is provided with some groups of gas nozzle heads 16, the often spray of group gas
Mouth 16 is made up of two symmetrically arranged gas flow channels 17, one end of each gas flow channel 17 and gas line 5
Connecting, the other end is gas outlet 18.The design of multiple gas outlets 18, can improve film growth rates and production efficiency.
Often the distance of the Liang Ge gas outlet of group gas nozzle head is less than grade, may diminish to micron order.
In this device, one or more gas outlet is placed in proximity to matrix surface.Such as, gas outlet have can
The place being less than 20mm from matrix surface, or the place less than 10mm, or the place less than 5mm can be placed on, or little
Place in 1mm.Gas outlet should move back and forth on matrix surface, in order to adjusts the working depth from surface.Gas goes out
Mouth also can be fixed on the specific working depth from surface, and matrix 4 moves back and forth.
This device, is transmitted one or more gas reactants by one or more gas line and arrives gas ejection
Device.As in figure 2 it is shown, two kinds of reacting gas arrive a gas outlet by two gas lines respectively, or as Fig. 4 arrives
Multiple gas outlets arrive matrix surface again.Although separate two pipelines are not combined with each other in legend, but
In some cases, these two pipelines are possible to couple together.Such as, separate pipeline can come together side by side, or two
Individual coaxial (heart) is nested together, or the mixture of two kinds of reacting gas passes through a pipelined to one or more gas
Outlet.
In each gas line 5, the gas reactant of flowing is related with gaseous storage tank 6.Such as, separate gas
Fluid line is used for carrying two kinds of gas reactants, and first gas line is connected to and first associated storage of gas reactant
Hide tank, and second gas line is connected to and second associated storage tank of gas reactant.
It is provided with and is connected with Dewar vessel 1, include the acidic by-products or interior that alkali compounds produces after neutralizing reaction
Containing molecular sieve for being adsorbed with the defecator 8 of poisonous gas；Defecator 8 is connected with vacuum pump 9.This device can also include one
Individual or multiple defecators 8.Contain produced by the gas of metal and another kind of gas reaction acid secondary in some applications
Product can be to equipment, and the mankind and environment etc. have potentially hazardous.Accordingly, it would be desirable to by reacted sour gas product and remnants
Gas basic solvent (liquid) neutralizes or (with molecular sieve) filters out, and is discharged in air by vacuum pump the most again.Example
As, halide gas is (such as WF6Or WCl6) react with hydrogen, produce acidic by-products such as HF or HCL after reaction.These acid
Property by-product after leaving Dewar vessel can by contact alkali compounds and be neutralised.Alkali compounds can be solid
State or liquid.
Be provided with mechanical hand I10, mechanical hand I10 to be connected with lasing light emitter 3 and gas discharge device, or mechanical hand I10 with
Frame 2 connects；Control device 11 to be moved relative to matrix 4 surface by mechanical hand I10 control lasing light emitter 3 and gas discharge device；
Or control device 11 and control matrix 4 relative to lasing light emitter 3 and gas discharge device shifting by mechanical hand I10 control support 2
Dynamic.
It is provided with control device 11, controls device 11 and control flow valve 7.
In some is invented, the metal source in gas reactant is obtained with metal reaction by gas.So,
In one embodiment, being provided with metal storage tank 19, metal storage tank 19 is arranged between gaseous storage tank 6 and gas line 5, gold
Belong to storage tank 19 and be externally provided with heater I20, be externally provided with heater at the gas line 5 being connected with metal storage tank 19
II21.As manufactured the process of tungsten chloride, the metal storage tank 19 equipped with leaf and the gaseous storage tank 6 equipped with chlorine, in operation
During, chlorine flows through the metal storage tank 19 being in the condition of high temperature equipped with leaf from gaseous storage tank 6, when chlorine and leaf
When contacting at high operating temperatures, tungsten chloride is just manufactured.In order to ensure tungsten chloride gaseous state transmission in gas line,
The periphery of its gas line flowed through installs heater equally.
In one embodiment, it is provided with excimer laser instrument 22 and mechanical hand II23, controls device 11 and pass through mechanical hand
II23 controls excimer laser instrument 22 and moves relative to matrix 4.After coating duty completes, excimer laser can be used
Unnecessary coating edge is wiped out by (excimer laser), thus obtains the most accurate coating size.Excimer laser
The factors such as the material category of coating is depended in the selection of the size of (excimer laser) 22 energy, thickness.
In one embodiment, being provided with template 24, template 24 is movably arranged between matrix 4 and gas discharge device, mould
The window 25 corresponding with thin film to be deposited and coating patterns is had on plate 24.Template 24 is by (quartzy) glass or silicon crystal
Sheet makes.The thickness of template is below 2mm.The window of various figure, the chi of the graphical window in template can be carved with in template
Very little may diminish to micron order.
In order to avoid gas outlet is owing to anti-(spoke) of the matrix surface thermal treatment zone penetrates heat and is in the condition of high temperature thus causes
Reacting gas just reacts not arriving matrix surface, thus by metal, and nonmetal and semiconductor material deposition is to gas
Pipeline is or/and on gas outlet face, and then affects the operation of whole system.In this case, it is therefore necessary to spray at gas
Go out increase thermal insulation layer on outside of deivce face.
2 one kinds of local growth thin film of embodiment and the method for coating
1) control device 11 to control lasing light emitter 3 light beam shines directly into matrix 4 surface local growth thin film or coating
On region 27, the surface in the region 27 of local growth thin film and coating is heated to design temperature；
2) control device and control the gas outlet 18 of gas discharge device and the region 27 of local growth thin film or coating
Surface is corresponding；
3) gas reactant is exported from gaseous storage tank 6, arrive gas discharge device through gas line 5, and from gas
Outlet winding-up is to matrix surface, and gas reactant occurs chemical reaction on the matrix surface of heating, and the solid product of generation sinks
Amass and form thin film and/or coating in matrix surface.
4) as shown in Figure 8, control device control excimer laser and move to matrix surface, by unnecessary thin film or painting
Layer is got rid of, thus reaches design accuracy.In one embodiment, show such as Fig. 9, it is also possible to be placed on gas outlet with masterplate
And between matrix, deshield some unnecessary reacting gas.Have various sizes of window on masterplate, its size with to sink
The size of long-pending coating matches or equally.
Above-mentioned a kind of local growth thin film and the method for coating, described gas reactant is sent out at the matrix surface of heating
Biochemical reaction is: the first gas reactant containing metal occurs at the matrix surface of heating with the second gas reactant
Redox reaction, described the first gas reactant containing metal is MXn, M be tungsten, molybdenum, tantalum, titanium, rhenium, niobium, nickel or
Hafnium, X is halogen, and n is 5 and 6, and the second gas reactant is hydrogen, oxygen, nitrogen or ammonia；Or, containing metal and
Nonmetallic gas reactant is decomposed reaction at the matrix surface of heating, and described is anti-containing metal and nonmetallic gas
Answering thing is MmXn, and M is Al, Ti, Pb, Mo, Fe, Ni, B, Zr, C, Si, Ge, Mn or Ga, and X is H, O or N, m and n is the whole of 1-5
Number.
Gas reactant is at the matrix surface generation chemical reaction of heating, namely chemical vapor deposition processes, Ke Yishi
Completed by two kinds of gas reactions or a kind of gas decomposition reaction.As:
1) high-temperature decomposition reaction (pyrolysis) (thermal decomposition)
AB (g)----→ A (s)+B (g) (g-represents that gas, s-represent solid)
Such as, such as monosilane (SiH4), first germane (GeH4), diborane (B2H6) methyl-monosilane (CH3-SiH3), hydrogen phosphide
(PH 3) etc. chemolysis reaction.This method can be by silicon (Si), germanium (Ge), boron (B), silicon oxide (SiO2), phosphorus (P), aluminum
(Al), titanium (Ti), lead (Pb), molybdenum (Mo), ferrum (Fe), nickel (Ni), zirconium (Zr), carbon (C), aluminium oxide (Al2O3), manganese oxide
(MnO2), the electrodeposition substance such as boron nitride (BN), silicon nitride (Si3N4), gallium nitride (GaN) is on matrix surface.
2) reduction reaction (reduction), generally utilizes hydrogen to complete.
AX (g)+H2 (g) ←==→ A (s)+HX (g)
Such as, the growth course of tungsten (W) thin film
WF6(g)+3H2(g)←→W(s)+6HF(g)
Profit can grow following thin film or coating, aluminum (Al), titanium (Ti), stannum (Sn), tantalum (Ta), niobium in this way
(Nb), chromium (Cr), molybdenum (Mo), ferrum (Fe), boron (B), silicon (Si), germanium (Ge), tantalum boride (TaB2), silicon oxide (SiO2), phosphatization
Boron (BP), germanium niobium (Nb3Ge) etc..
3) oxidation reaction (oxidation), generally utilizes oxygen to complete
AX(g)+O2(g)---→AO(s)+[O]X(g)
If SiO2 is exactly that profit forms thin film, SiH4 (g)+O2 (g)-→ SiO2 (s)+2H2 (g) in this way.Profit
Can grow following thin film or coating in this way, aluminium oxide (Al2O3), titanium oxide (TiO2), tantalum oxide (Ta2O5),
Stannum oxide (SnO2), zinc oxide (ZnO) etc..
4) synthetic reaction (compound formation), generally utilizes ammonia or steam to complete
AX(g)+NH3-→AN(s)+HX(g)
AX(g)+H2O(g)-→AO(s)+HX(g)
If boron nitride (BN) thin film is exactly that profit is formed in this way, BF3 (g)+NH3 (g)-→ BN (s)+3HF
(g).Profit can grow following thin film or coating in this way, titanium nitride (TiN), tantalum nitride (TaN), aluminium nitride (AlN),
Carborundum (SiC), aluminium oxide (Al2O3), Indium sesquioxide. (In2O3), stannum oxide (SnO2), silicon oxide (SiO2) etc..
The size of the thermal treatment zone of matrix surface and the coating size deposited subsequently depend on laser energy size and
The heat-conductive characteristic of matrix.The method shown in the present invention is can be with controllable means on the least region, surface
Metal, nonmetal and coated semiconductor is grown by the way of gas phase transition is solid phase.Such as, controllable laser heats
One region, its diameter is likely less than 10 millimeters, or less than 8 millimeters, or less than 5 millimeters, or less than 1 millimeter, or
Less than 100 microns, or less than 20 microns, the size in region 21 depends on the size of lasing beam diameter.
For the matrix of some high thermal conductivity, perhaps the size of the thermal treatment zone will not be the biggest.Regulate response parameter sometimes
Increase response speed and deposition velocity, thus limit the heat affected area interference to coating precision around the thermal treatment zone.The need to
If, matrix surface can be coated with the sensitive material that last layer can chemically be got rid of, such as photoresist
(photoresist) etc..
The precise thickness of coating can obtain by controlling corresponding response parameter, such as, the temperature of the thermal treatment zone, reaction gas
The flow of body and the time of deposition.For example, the thickness of coating is in nanometer (nm) rank sometimes, if 1 nanometer (nm) is to 100
Nanometer (nm) etc..Sometimes the thickness of coating is in millimeter rank, such as 1 millimeter (mm) to 100 millimeters (mm) etc..Sometimes coating is deposited
Thickness needs to be between 1 nanometer (nm) to 5 millimeters (mm).
Utilize the method in the present invention can also print electronic devices and components on matrix.Such as, utilize this method permissible
Print electronic devices and components, as grown gate circuit, diode, triode, resistance, electric capacity etc. on monocrystalline silicon piece.Utilize this
Method can print the material of multilamellar different material in ceramic surface or metal surface or macromolecule surface.
Utilizing the method in the present invention can also print monocrystal material on matrix, first matrix material is monocrystal,
Crystal to be grown to have similar crystal structure to matrix material.Such as, tungsten (W) crystal can be easier at molybdenum (Mo)
Monocrystalline is grown, because they have similar crystal structure on the surface of monocrystalline.
Utilize the method in the present invention to may also be used on matrix surface and grow ceramic material or high-abrasive material.Example
As, silicon dioxide (SiO2), aluminium sesquioxide (Al2O3), boron nitride (BN), carborundum (SiC) and aluminium nitride (AlN) etc..
In the present invention, after completing coating structure, matrix skin material can be got rid of, thus it is complete to obtain an independence
Whole (three-dimensional) structural member, (such as MEMS) (MEMS).Matrix material can chemically or the method for machinery is gone
Remove.
Claims (8)
1. the device being applicable to local growth thin film and coating, it is characterised in that:
It is provided with the Dewar vessel (1) that vacuum space is provided；
It is provided with and is arranged in Dewar vessel (1), be used for placing the support (2) of matrix (4)；
It is provided with and is arranged in Dewar vessel (1), for providing thermal source to the region of matrix (4) surface local growth thin film or coating
Lasing light emitter (3)；
It is provided with and is arranged in Dewar vessel (1), for matrix (4) surface local growth thin film or the region blowing gas of coating
The gas discharge device of reactant；
Being provided with one or several are for transmitting the gas line (5) of gas reactant, gas line (5) one end is sprayed with gas
Going out device to connect, the other end stretches out Dewar vessel (1) and is connected with the gaseous storage tank (6) for stored gas reactant；At gas
Flow valve (7) it is provided with between fluid line (5) and gas storage tank (6)；
It is provided with and is connected with Dewar vessel (1), include acidic by-products that alkali compounds produces after neutralizing reaction or include
Molecular sieve is for being adsorbed with the defecator (8) of poisonous gas；Defecator (8) is connected with vacuum pump (9)；
Being provided with mechanical hand I (10), mechanical hand I (10) is connected with lasing light emitter (3) and gas discharge device, or mechanical hand I (10)
It is connected with support (2)；
It is provided with control device (11), controls device (11) and control flow valve (7)；Control device (11) to be controlled by mechanical hand I (10)
Lasing light emitter processed (3) and gas discharge device are mobile relative to matrix (4), or control device (11) by mechanical hand I (10) control
Support processed (2) controls matrix (4) and moves relative to lasing light emitter (3) and gas discharge device.
A kind of device being applicable to local growth thin film and coating the most according to claim 1, it is characterised in that: described
Gas discharge device is the nozzle (12) that one end is provided with gas outlet (18), and the port of export of each gas line (5) is respectively mounted
One nozzle (12).
A kind of device being applicable to local growth thin film and coating the most according to claim 1, it is characterised in that: described
Gas discharge device is: be provided with dividing plate (14) in cone body (13), and dividing plate (14) is separated into two in cone body (13)
Gas flow cavity, two gas flow cavities are in gas outlet (18) end junction, and each gas flow cavity connects a gas line
(5)。
A kind of device being applicable to local growth thin film and coating the most according to claim 1, it is characterised in that: described
Gas discharge device is: gas manifold structure (15) is provided with some groups of gas nozzle heads (16), often group gas nozzle head
(16) it is made up of two symmetrically arranged gas flow channels (17), one end of each gas flow channel (17) and gas line
(5) connecting, the other end is gas outlet (18).
A kind of device being applicable to local growth thin film and coating the most according to claim 1, it is characterised in that: it is provided with gold
Belonging to storage tank (19), metal storage tank (19) is arranged between gaseous storage tank (6) and gas line (5), metal storage tank
(19) it is externally provided with heater I (20), is externally provided with heating device II at the gas line (5) being connected with metal storage tank (19)
(21)。
A kind of device being applicable to local growth thin film and coating the most according to claim 1, it is characterised in that: it is provided with standard
Molecular laser instrument (22) and mechanical hand II (23), control device (11) and control excimer laser instrument (22) by mechanical hand II (23)
Mobile relative to matrix (4).
A kind of device being applicable to local growth thin film and coating the most according to claim 1, it is characterised in that: it is provided with mould
Plate (24), template (24) is movably arranged between matrix (4) and gas discharge device, template (24) has thin with to be deposited
The window (25) that film is corresponding with coating patterns.
A kind of device being applicable to local growth thin film and coating the most according to claim 1, it is characterised in that: described
The outer rim of gas discharge device is provided with thermal insulation layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620333971.2U CN205603669U (en) | 2016-04-20 | 2016-04-20 | Device suitable for local growth film and coating |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620333971.2U CN205603669U (en) | 2016-04-20 | 2016-04-20 | Device suitable for local growth film and coating |
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| CN205603669U true CN205603669U (en) | 2016-09-28 |
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| CN201620333971.2U Expired - Fee Related CN205603669U (en) | 2016-04-20 | 2016-04-20 | Device suitable for local growth film and coating |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105695951A (en) * | 2016-04-20 | 2016-06-22 | 肖志凯 | Apparatus for partially growing film and coating and application of apparatus |
| CN107043920A (en) * | 2016-02-08 | 2017-08-15 | 伊利诺斯工具制品有限公司 | Method and system for the local deposits of metal on the surface |
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2016
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107043920A (en) * | 2016-02-08 | 2017-08-15 | 伊利诺斯工具制品有限公司 | Method and system for the local deposits of metal on the surface |
| US10865477B2 (en) | 2016-02-08 | 2020-12-15 | Illinois Tool Works Inc. | Method and system for the localized deposit of metal on a surface |
| CN105695951A (en) * | 2016-04-20 | 2016-06-22 | 肖志凯 | Apparatus for partially growing film and coating and application of apparatus |
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