CN102674333A - Method for preparing structured graphene based on reaction of Cl2 and Ni film annealing - Google Patents
Method for preparing structured graphene based on reaction of Cl2 and Ni film annealing Download PDFInfo
- Publication number
- CN102674333A CN102674333A CN2012101623852A CN201210162385A CN102674333A CN 102674333 A CN102674333 A CN 102674333A CN 2012101623852 A CN2012101623852 A CN 2012101623852A CN 201210162385 A CN201210162385 A CN 201210162385A CN 102674333 A CN102674333 A CN 102674333A
- Authority
- CN
- China
- Prior art keywords
- film
- reaction
- sic
- annealing
- growth
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Landscapes
- Carbon And Carbon Compounds (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
The invention discloses a method for preparing structured graphene based on reaction of Cl2 and Ni film annealing, mainly aiming at solving the problems that the graphene prepared by the prior art is poor in continuity and uneven in the number of layers. The realization process of the method comprises the steps of: (1) leading a carbide layer to grow on a Si substrate for transition; (2) leading a 3C-SiC film to grow at the temperature of 1200-1300 DEG C; (3) depositing a layer of SiO2 on the surface of the 3C-SiC film, and carving a graphic window; (4) after the graphic window is formed, leading the exposed 3C-SiC to have reaction with Cl2 at the temperature of 700-1100 DEG C, and generating a carbon film; (5) then, putting the generated carbon film sample piece into a buffer hydrofluoric acid solution, and removing the SiO2 outside the window; (6) after that, depositing a layer of Ni film on another Si sample piece by electron beams; and (7) arranging the carbon film sample piece without SiO2 on the Ni film, and arranging in Ar gas; and carrying out annealing at 900-1100 DEG C for 15-30minutes, and generating the structured graphene at the position of the window of the carbon film. The structured graphene prepared by the invention is smooth in the surface, good in continuity and low in porosity, thus being used for making a microelectronic device.
Description
Technical field
The invention belongs to microelectronics technology, relate to a kind of semiconductor film material and preparation method thereof, specifically be based on annealing of Ni film and Cl
2The structurizing graphene preparation method of reaction.
Technical background
It is in 2004 that Graphene appears in the laboratory, and at that time, two scientist An Delie Jim of Univ Manchester UK and the Ke Siteyanuowo Lip river husband that disappears found that they can obtain more and more thinner graphite flake with a kind of very simple method.They separate graphite flake from graphite, the two sides with thin slice is bonded on a kind of special adhesive tape then, tears adhesive tape, just can be divided into two graphite flake.Operation so constantly, last so thin slice is more and more thinner, they have obtained the thin slice that only is made up of one deck carbon atom, Here it is Graphene.After this, the novel method of preparation Graphene emerges in an endless stream.Present preparation method mainly contains two kinds:
The first thermolysis SiC method, to remove Si through lip-deep SiC is decomposed, residual subsequently carbon forms Graphene to this method with the monocrystal SiC heating.Yet the monocrystal SiC that uses in the SiC thermolysis is very expensive, and the Graphene that grows out is island and distributes, and the number of plies is inhomogeneous, and when making device because photoetching process can make the electronic mobility of Graphene reduce, thereby influenced device performance.
Second chemical Vapor deposition process; This method provides a kind of effective ways of controlled preparation Graphene; It is with planar substrates, places the decomposable presoma of high temperature like mf, metal single crystal etc., in atmosphere such as methane, ethene; Make carbon atom be deposited on substrate surface through high temperature annealing and form Graphene, at last with obtaining independently graphene film after the chemical corrosion method removal metal base.The growth of the adjustable Graphenes of parameter such as flow of the type through selecting substrate, the temperature of growth, presoma; Like growth velocity, thickness, area etc.; The maximum shortcoming of this method is that the Graphene lamella and the substrate that obtain interact strong; Lost the character of many single-layer graphenes, and the continuity of Graphene not fine.
Summary of the invention
The objective of the invention is to deficiency, propose a kind of based on annealing of Ni film and Cl to above-mentioned prior art
2The structurizing graphene preparation method of reaction; To reduce cost; Improve the Graphene surface flatness with continuity, reduce porosity, be implemented on the 3C-SiC substrate optionally growth structure Graphene, in follow-up manufacturing device process, to carry out the technological process of etching to Graphene with release; The electronic mobility that guarantees Graphene is stable, improves device performance.
For realizing above-mentioned purpose, preparation method of the present invention may further comprise the steps:
(1) the Si substrate base to the 4-12 inch carries out standard cleaning;
(2) the Si substrate base after will cleaning is put into CVD system response chamber, reaction chamber is vacuumized reach 10
-7The mbar rank;
(3) at H
2Under the situation of protection, make reaction chamber progressively be warming up to 900 ℃-1200 ℃ of carbonization temperatures, feeding flow is the C of 30sccm
3H
8, substrate is carried out carbonization 5-10min, growth one deck carburization zone;
(4) reaction chamber is warming up to 1200 ℃-1300 ℃ of growth temperatures, feeds C
3H
8And SiH
4, carrying out the 3C-SiC thin film heterogeneity epitaxial growth, growth time is 30-60min, then at H
2Protection progressively is cooled to room temperature down, accomplishes the 3C-SiC growth for Thin Film;
(5) utilize plasma enhanced chemical vapor deposition PECVD method, the thick SiO of deposit one deck 0.5-1 μ m at the good 3C-SiC film surface of growth
2Mask layer;
(6) at mask layer surfaces coated one deck photoresist material, and carve the identical window of substrate shape with the device of required making, expose 3C-SiC, form structured graphics;
(7) print after will windowing places silica tube, is heated to 700-1100 ℃;
(8) in silica tube, feed Ar gas and Cl
2The mixed gas of gas continues 3-5min, makes Cl
2React with exposed 3C-SiC, generate carbon film;
(9) place buffered hydrofluoric acid solution to remove the SiO outside the window carbon film print that generates
2
(10) the thick Ni film of electron beam deposition 300-500nm on another sheet Si print;
(11) will remove SiO
2After the carbon film print place on the Ni film, again they are together placed Ar gas, be 900-1100 ℃ of down annealing 15-30 minute in temperature, make carbon film reconstitute Graphene at the window's position, again the Ni film is taken away from the Graphene print.
The present invention compared with prior art has following advantage:
1. the present invention anneals owing to being utilized on the Ni film, thereby the carbon film that generates reconstitutes continuity Graphene preferably more easily.
2. the present invention is because the structure fossil China ink alkene of optionally having grown need not Graphene is carried out etching when on this Graphene, making device, thereby the electronic mobility in the Graphene can not reduce, and guaranteed the device performance of making.
3. 3C-SiC and Cl among the present invention
2Can under lower temperature and normal pressure, react, and speed of reaction is fast.
4. the present invention is owing to utilize 3C-SiC and Cl
2Solid/liquid/gas reactions, thereby the Graphene smooth surface that generates, voidage is low, and thickness is controlled easily.
The present invention since growth during 3C-SiC earlier on the Si substrate growth one deck carburization zone as transition, and then growth 3C-SiC, thereby the 3C-SiC quality of growth is high.
But the present invention since the 3C-SiC heteroepitaxial growth on the Si disk, thereby low with this method growth structure Graphene cost.
Description of drawings
Fig. 1 is the device synoptic diagram that the present invention prepares Graphene;
Fig. 2 is the schema that the present invention prepares Graphene.
Embodiment
With reference to Fig. 1, preparation equipment of the present invention mainly is made up of silica tube 1 and resistance furnace 2, and wherein silica tube 1 is provided with inlet mouth 3 and air outlet 4, and resistance furnace is 2 to be the ring-type hollow structure, and silica tube 1 is inserted in the resistance furnace 2.
With reference to Fig. 2, making method of the present invention provides following three kinds of embodiment.
Embodiment 1
Step 1: remove the sample surfaces pollutent.
4 inches Si substrate bases are carried out cleaning surfaces handle, promptly use NH earlier
4OH+H
2O
2Reagent soaked sample 10 minutes, took out the back oven dry, to remove the sample surfaces organic residue; Re-use HCl+H
2O
2Reagent soaked sample 10 minutes, took out the back oven dry, to remove ionic contamination.
Step 2: the Si substrate base is put into CVD system response chamber, reaction chamber is vacuumized reach 10
-7The mbar rank.
Step 3: growth carburization zone.
At H
2Under the situation of protection, reaction chamber temperature is risen to 900 ℃ carbonization temperature, feeding flow to reaction chamber then is the C of 30sccm
3H
8, growth one deck carburization zone on the Si substrate, growth time is 10min.
Step 4: growth 3C-SiC film on carburization zone.
Reaction chamber temperature is risen to 1200 ℃ growth temperature rapidly, feed the SiH that flow is respectively 20sccm and 40sccm
4And C
3H
8, carrying out the 3C-SiC thin film heterogeneity epitaxial growth, growth time is 60min; Then at H
2Protection progressively is cooled to room temperature down, accomplishes the 3C-SiC growth for Thin Film.
Step 5: at the good 3C-SiC film surface deposit one deck SiO of growth
2Mask layer.
(5.1) the good 3C-SiC film print of will growing is put into the PECVD system, and internal system pressure is adjusted to 3.0Pa, and radio frequency power is adjusted to 100W, and temperature is adjusted to 150 ℃;
(5.2) in the PECVD system, feed the SiH that flow velocity is respectively 30sccm, 60sccm and 200sccm
4, N
2O and N
2, continue 30min, make SiH
4And N
2O reacts, thereby at the thick SiO of 3C-SiC film surface deposit one deck 0.5 μ m
2Mask layer.
Step 6: at SiO
2Carve graphical window on the mask layer.
At SiO
2Carve graphical window on the mask layer.
(6.1) at SiO
2Spin coating one deck photoresist material on the mask layer;
(6.2) according to make device substrate shape process reticle, and then carry out photoetching, with figure transfer on the reticle to SiO
2On the mask layer;
(6.3) corrode SiO with buffered hydrofluoric acid
2Mask layer etches graphical window, exposes 3C-SiC, forms structured graphics.
Step 7: the silica tube of packing into of the print after will windowing, and exhaust heating.
(7.1) during the print after will windowing is packed silica tube 1 into, place resistance furnace 2 to silica tube;
(7.2) to silica tube, feed the Ar gas that flow velocity is 80sccm from inlet mouth 3, silica tube is carried out emptying in 10 minutes, make gas 4 discharges from the air outlet;
(7.3) open the resistance furnace power switch, silica tube is heated to 700 ℃.
Step 8: generate carbon film
Feed Ar gas and the Cl that flow velocity is respectively 98sccm and 2sccm to silica tube
2Gas continues 5 minutes, makes Cl
23C-SiC reaction with exposed generates carbon film.
Step 9: remove remaining SiO
2
The carbon film print that generates is taken out and places hydrofluoric acid and water proportioning from silica tube is the SiO outside the buffered hydrofluoric acid solution removal window of 1:10
2
Step 10: deposit Ni film on the Si print.
Get another Si print and put on the slide glass of electron beam evaporation deposition machine, the adjustment slide glass is 50cm to the distance of target, and reaction chamber pressure is evacuated to 5 * 10
-4Pa, the adjusting line is 40mA, evaporation 10min, the thick Ni film of deposition one deck 300nm on the Si print.
Step 11: reconstitute Graphene.
(11.1) will remove SiO
2After the carbon film print place on the Ni film;
(11.2) carbon film print and Ni film integral body being placed flow velocity is the Ar gas of 90sccm, is 1100 ℃ of annealing 15 minutes down in temperature, makes carbon film reconstitute successive structurizing Graphene at the window's position;
(11.3) the Ni film is taken away from the structurizing Graphene, obtain structurizing Graphene print.
Step 1: remove the sample surfaces pollutent.
8 inches Si substrate bases are carried out cleaning surfaces handle, promptly use NH earlier
4OH+H
2O
2Reagent soaked sample 10 minutes, took out the back oven dry, to remove the sample surfaces organic residue; Re-use HCl+H
2O
2Reagent soaked sample 10 minutes, took out the back oven dry, to remove ionic contamination.
Step 2: identical with the step 2 of embodiment 1.
Step 3: growth carburization zone.
At H
2Under the situation of protection, reaction chamber temperature is risen to 1050 ℃ of carbonization temperatures, feeding flow to reaction chamber then is the C of 30sccm
3H
8, growth one deck carburization zone on the Si substrate, growth time is 7min.
Step 4: growth 3C-SiC film on carburization zone.
Reaction chamber temperature is risen to 1200 ℃ of growth temperatures rapidly, feed the SiH that flow is respectively 25sccm and 50sccm
4And C
3H
8, carrying out the 3C-SiC thin film heterogeneity epitaxial growth, growth time is 45min; Then at H
2Protection progressively is cooled to room temperature down, accomplishes the 3C-SiC growth for Thin Film.
Step 5: at the good 3C-SiC film surface deposit one deck SiO of growth
2
The 3C-SiC film print that growth is good is put into the PECVD system, and internal system pressure is adjusted to 3.0Pa, and radio frequency power is adjusted to 100W, and temperature is adjusted to 150 ℃; In system, feed the SiH that flow velocity is respectively 30sccm, 60sccm and 200sccm
4, N
2O and N
2, continue 75min, make SiH
4And N
2O reacts, thereby at the thick SiO of 3C-SiC print surface deposition one deck 0.8 μ m
2Mask layer.
Step 6: identical with the step 6 of embodiment 1.
Step 7: the silica tube of packing into of the print after will windowing, and exhaust heating.
Print after windowing is placed silica tube 1, place resistance furnace 2 to silica tube; To silica tube, feed the Ar gas that flow velocity is 80sccm from inlet mouth 3, silica tube is carried out emptying in 10 minutes, gas is 4 discharges from the air outlet; Open the resistance furnace power switch again, silica tube is heated to 1000 ℃.
Step 8: generate carbon film
Feed Ar gas and the Cl that flow velocity is respectively 97sccm and 3sccm to silica tube
2Gas continues 4 minutes, makes Cl
23C-SiC reaction with exposed generates carbon film.
Step 9: identical with the step 9 of embodiment 1.
Step 10: deposit Ni film on the Si print.
Get another Si print and put on the slide glass of electron beam evaporation deposition machine, slide glass is adjusted to 50cm to the distance of target, and reaction chamber pressure is evacuated to 5 * 10
-4Pa, the adjusting line is 40mA, evaporation 15min, the thick Ni film of deposition one deck 400nm on the Si print.
Step 11: reconstitute Graphene.
To remove SiO
2After the carbon film print place on the Ni film; It is the Ar gas of 55sccm that carbon film print and Ni film integral body are placed flow velocity, is 1000 ℃ of annealing 20 minutes down in temperature, makes carbon film reconstitute successive structurizing Graphene at the window's position; The Ni film is taken away from the structurizing Graphene, obtain structurizing Graphene print.
Steps A: 12 inches Si substrate bases are carried out cleaning surfaces handle, promptly use NH earlier
4OH+H
2O
2Reagent soaked sample 10 minutes, took out the back oven dry, to remove the sample surfaces organic residue; Re-use HCl+H
2O
2Reagent soaked sample 10 minutes, took out the back oven dry, to remove ionic contamination.
Step B: identical with the step 2 of embodiment 1.
Step C: at H
2Under the situation of protection reaction chamber temperature is risen to 1200 ℃ of carbonization temperatures, feeding flow to reaction chamber then is the C of 30sccm
3H
8, continue 5min, with growth one deck carburization zone on the Si substrate.
Step D: reaction chamber temperature is risen to 1300 ℃ of growth temperatures rapidly, feed the SiH that flow is respectively 30sccm and 60sccm
4And C
3H
8, carry out 3C-SiC thin film heterogeneity epitaxial growth 30min, then at H
2Protection progressively is cooled to room temperature down.
Step e: the good 3C-SiC print of will growing is put into the PECVD system, and internal system pressure is adjusted to 3.0Pa, and radio frequency power is adjusted to 100W, and temperature is adjusted to 150 ℃; In system, feed the SiH that flow velocity is respectively 30sccm, 60sccm and 200sccm
4, N
2O and N
2, continue 100min, make SiH
4And N
2O reacts, at the thick SiO of 3C-SiC print surface deposition one deck 1 μ m
2Mask layer.
Step F: identical with the step 6 of embodiment 1.
Step G: the print after will windowing places silica tube 1, places resistance furnace 2 to silica tube; To silica tube, feed the Ar gas that flow velocity is 80sccm from inlet mouth 3, silica tube is carried out emptying in 10 minutes, gas is 4 discharges from the air outlet; Open the resistance furnace power switch again, silica tube is heated to 1100 ℃.
Step H: in silica tube, feed Ar gas and the Cl that flow velocity is respectively 95sccm and 5sccm
2Gas, the time length is 3 minutes, makes Cl
23C-SiC reaction with exposed generates carbon film.
Step I: identical with the step 9 of embodiment 1.
Step J: get another Si print and put on the slide glass of electron beam evaporation deposition machine, slide glass is 50cm to the distance of target, and reaction chamber pressure is evacuated to 5 * 10
-4Pa, the adjusting line is 40mA, evaporation 20min, the thick Ni film of deposition one deck 500nm on the Si print.
Step K: will remove SiO
2After the carbon film print place on the Ni film; It is the Ar gas of 30sccm that carbon film print and Ni film integral body are placed flow velocity, is 900 ℃ of annealing 30 minutes down in temperature, makes carbon film reconstitute successive structurizing Graphene at the window's position; The Ni film is taken away from the structurizing Graphene, obtain structurizing Graphene print.
Claims (7)
1. one kind based on Ni film annealing and Cl
2The structurizing graphene preparation method of reaction may further comprise the steps:
(1) the Si substrate base to the 4-12 inch carries out standard cleaning;
(2) the Si substrate base after will cleaning is put into CVD system response chamber, reaction chamber is vacuumized reach 10
-7The mbar rank;
(3) at H
2Under the situation of protection, make reaction chamber progressively be warming up to 900 ℃-1200 ℃ of carbonization temperatures, feeding flow is the C of 30sccm
3H
8, substrate is carried out carbonization 5-10min, growth one deck carburization zone;
(4) reaction chamber is warming up to 1200 ℃-1300 ℃ of growth temperatures, feeds C
3H
8And SiH
4, carrying out the 3C-SiC thin film heterogeneity epitaxial growth, growth time is 30-60min, then at H
2Protection progressively is cooled to room temperature down, accomplishes the 3C-SiC growth for Thin Film;
(5) utilize plasma enhanced chemical vapor deposition PECVD method, the thick SiO of deposit one deck 0.5-1 μ m at the good 3C-SiC film surface of growth
2Mask layer;
(6) at mask layer surfaces coated one deck photoresist material, and carve the identical window of substrate shape with the device of required making, expose 3C-SiC, form structured graphics;
(7) print after will windowing places silica tube, is heated to 700-1100 ℃;
(8) in silica tube, feed Ar gas and Cl
2The mixed gas of gas continues 3-5min, makes Cl
2React with exposed 3C-SiC, generate carbon film;
(9) place buffered hydrofluoric acid solution to remove the SiO outside the window carbon film print that generates
2
(10) the thick Ni film of electron beam deposition 300-500nm on another sheet Si print;
(11) will remove SiO
2After the carbon film print place on the Ni film, again they are together placed Ar gas, be 900-1100 ℃ of down annealing 15-30 minute in temperature, make carbon film reconstitute Graphene at the window's position, again the Ni film is taken away from the Graphene print.
2. according to claim 1 based on annealing of Ni film and Cl
2The structurizing graphene preparation method of reaction is characterized in that the SiH that said step (4) feeds
4And C
3H
8, its flow is respectively 20-30sccm and 40-60sccm.
3. according to claim 1 based on annealing of Ni film and Cl
2The structurizing graphene preparation method of reaction, what it is characterized in that said step (5) utilizes PECVD deposit SiO
2, its processing condition are: SiH
4, N
2O and N
2Flow velocity be respectively 30sccm, 60sccm and 200sccm, the reaction chamber internal pressure is 3.0Pa, radio frequency power is 100W,
Deposition temperature is 150 ℃, and deposition time is 30-100min.
4. according to claim 1 based on annealing of Ni film and Cl
2The structurizing graphene preparation method of reaction is characterized in that Ar gas and Cl that said step (8) feeds
2Gas, its flow velocity is respectively 95-98sccm and 5-2sccm.
5. according to claim 1 based on annealing of Ni film and Cl
2The structurizing graphene preparation method of reaction is characterized in that buffered hydrofluoric acid solution in the said step (9), is to use ratio formulated as hydrofluoric acid and the water of 1:10.
6. according to claim 1 based on annealing of Ni film and Cl
2The structurizing graphene preparation method of reaction, it is characterized in that the condition of electron beam deposition in the said step (10) is: substrate is 50cm to the distance of target, and reaction chamber pressure is 5 * 10
-4Pa, line are 40mA, and evaporation time is 10-20min.
7. according to claim 1 based on annealing of Ni film and Cl
2The structurizing graphene preparation method of reaction, the flow velocity of Ar gas is 30-90sccm when it is characterized in that said step (11) annealing.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012101623852A CN102674333B (en) | 2012-05-23 | 2012-05-23 | Method for preparing structured graphene based on reaction of Cl2 and Ni film annealing |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012101623852A CN102674333B (en) | 2012-05-23 | 2012-05-23 | Method for preparing structured graphene based on reaction of Cl2 and Ni film annealing |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102674333A true CN102674333A (en) | 2012-09-19 |
| CN102674333B CN102674333B (en) | 2013-11-20 |
Family
ID=46806978
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2012101623852A Expired - Fee Related CN102674333B (en) | 2012-05-23 | 2012-05-23 | Method for preparing structured graphene based on reaction of Cl2 and Ni film annealing |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102674333B (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102931060A (en) * | 2012-11-23 | 2013-02-13 | 西安电子科技大学 | Ni film annealing graphical graphene preparation method on basis of reaction of SiC and chlorine |
| CN103151265A (en) * | 2013-01-31 | 2013-06-12 | 西安电子科技大学 | Manufacturing method of silicon (Si) substrate upper side grid grapheme field effect tube based on copper (Cu) film annealing |
| CN103165468A (en) * | 2013-01-31 | 2013-06-19 | 西安电子科技大学 | Preparing method of side grid graphene transistor through reaction of silicon carbide (SiC) and chlorine gas (Cl2) based on copper (Cu) membrane annealing |
| CN103165470A (en) * | 2013-01-31 | 2013-06-19 | 西安电子科技大学 | Preparing method of side grid graphene transistor based on copper (Cu) membrane annealing and chlorine (Cl2) reaction |
| CN103183338A (en) * | 2013-03-12 | 2013-07-03 | 西安电子科技大学 | Preparation method of large-area graphene based on Ni film annealing and chlorine reaction |
| CN103311104A (en) * | 2013-06-13 | 2013-09-18 | 苏州大学 | Method for manufacturing graphene |
| CN107381542A (en) * | 2017-09-07 | 2017-11-24 | 蚌埠玻璃工业设计研究院 | A kind of preparation facilities of graphene film and preparation method thereof |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101285175A (en) * | 2008-05-29 | 2008-10-15 | 中国科学院化学研究所 | Process for preparing graphenes by chemical vapour deposition method |
| WO2009113472A1 (en) * | 2008-03-10 | 2009-09-17 | 国立大学法人東北大学 | Graphene or graphite thin film, manufacturing method thereof, thin film structure and electronic device |
| CN101602503A (en) * | 2009-07-20 | 2009-12-16 | 西安电子科技大学 | The method of 4H-SiC silicon face extending and growing graphene |
-
2012
- 2012-05-23 CN CN2012101623852A patent/CN102674333B/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2009113472A1 (en) * | 2008-03-10 | 2009-09-17 | 国立大学法人東北大学 | Graphene or graphite thin film, manufacturing method thereof, thin film structure and electronic device |
| CN101285175A (en) * | 2008-05-29 | 2008-10-15 | 中国科学院化学研究所 | Process for preparing graphenes by chemical vapour deposition method |
| CN101602503A (en) * | 2009-07-20 | 2009-12-16 | 西安电子科技大学 | The method of 4H-SiC silicon face extending and growing graphene |
Non-Patent Citations (4)
| Title |
|---|
| 《Carbon》 20090331 Zhen-Yu Juang et al. "Synthesis of graphene on silicon carbide substrates at low temperature" 第2026-2031页 1-7 第47卷, * |
| 《Physica Status Solidi C》 20111227 Meng-Yu Lin et al. "Painted graphitic carbon films formed underneath Ni templates" 第179-182页 1-7 第9卷, 第2期 * |
| MENG-YU LIN ET AL.: ""Painted graphitic carbon films formed underneath Ni templates"", 《PHYSICA STATUS SOLIDI C》, vol. 9, no. 2, 27 December 2011 (2011-12-27), pages 179 - 182 * |
| ZHEN-YU JUANG ET AL.: ""Synthesis of graphene on silicon carbide substrates at low temperature"", 《CARBON》, vol. 47, 31 March 2009 (2009-03-31), pages 2026 - 2031, XP026104606, DOI: doi:10.1016/j.carbon.2009.03.051 * |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102931060A (en) * | 2012-11-23 | 2013-02-13 | 西安电子科技大学 | Ni film annealing graphical graphene preparation method on basis of reaction of SiC and chlorine |
| CN103151265A (en) * | 2013-01-31 | 2013-06-12 | 西安电子科技大学 | Manufacturing method of silicon (Si) substrate upper side grid grapheme field effect tube based on copper (Cu) film annealing |
| CN103165468A (en) * | 2013-01-31 | 2013-06-19 | 西安电子科技大学 | Preparing method of side grid graphene transistor through reaction of silicon carbide (SiC) and chlorine gas (Cl2) based on copper (Cu) membrane annealing |
| CN103165470A (en) * | 2013-01-31 | 2013-06-19 | 西安电子科技大学 | Preparing method of side grid graphene transistor based on copper (Cu) membrane annealing and chlorine (Cl2) reaction |
| CN103183338A (en) * | 2013-03-12 | 2013-07-03 | 西安电子科技大学 | Preparation method of large-area graphene based on Ni film annealing and chlorine reaction |
| CN103311104A (en) * | 2013-06-13 | 2013-09-18 | 苏州大学 | Method for manufacturing graphene |
| CN103311104B (en) * | 2013-06-13 | 2016-01-27 | 苏州大学 | A kind of preparation method of Graphene |
| CN107381542A (en) * | 2017-09-07 | 2017-11-24 | 蚌埠玻璃工业设计研究院 | A kind of preparation facilities of graphene film and preparation method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN102674333B (en) | 2013-11-20 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102583329B (en) | Preparation method for large-area graphene based on Cu film auxiliary annealing and Cl2 reaction | |
| CN102583331B (en) | Preparation method for large-area graphene based on Ni film auxiliary annealing and Cl2 reaction | |
| CN102674333B (en) | Method for preparing structured graphene based on reaction of Cl2 and Ni film annealing | |
| CN102505114A (en) | Preparation method of graphene on SiC substrate based on Ni film-aided annealing | |
| CN102653401B (en) | Structural graphene preparation method based on Ni film annealing | |
| CN103981507B (en) | A kind of graphene preparation method | |
| CN101285175B (en) | Process for preparing graphenes by chemical vapour deposition method | |
| CN102674328A (en) | Preparation method of structured graphene based on Cu film annealing | |
| CN102674329A (en) | Preparation method of structured graphene based on Cl2 reaction | |
| CN102674330A (en) | Method for preparing structured graphene on SiC substrate based on Cu film annealing | |
| CN102701789B (en) | Method for forming structured graphene on SiC substrate based on Cl2 reaction | |
| CN102674331A (en) | Method for preparing structured graphene by reaction of SiC and Cl2 based on Ni film annealing | |
| CN102718208A (en) | Preparation method of structured grapheme on SiC substrate based on Ni membrane annealing | |
| CN102583325B (en) | Method for preparing graphene on SiC substrate based on Ni membrane annealing and Cl2 reaction | |
| CN102674332A (en) | Method for preparing structured graphene by reaction of SiC and Cl2 based on Cu film annealing | |
| CN102718207A (en) | Preparation method of structured grapheme based on Cu membrane annealing and Cl2 reaction | |
| CN102505141A (en) | Graphene preparation method based on Cu film assisted annealing | |
| CN102723258A (en) | Method for preparing structured graphene by taking SiC as substrate | |
| CN102530936A (en) | Method for producing graphene on silicon carbide (SiC) underlayer based on chlorine (Cl2) reaction | |
| CN102505140A (en) | Graphene preparation method based on auxiliary annealing of Ni film | |
| CN102936011B (en) | Ni film annealing patterned graphene preparation method based on 3C-SiC/chlorine gas reaction | |
| CN102583330B (en) | Method for preparing graphene on SiC substrate based on Cu film assisted annealing | |
| CN102924119A (en) | Graphical graphene preparation method based on reaction between 3C-SiC and chlorine gas and Cu film annealing | |
| CN102505113B (en) | Preparation method of large-area graphene based on Cl2 reaction | |
| CN102938368A (en) | Si-substrate patterned graphene preparation method based on Ni film annealing |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20131120 Termination date: 20190523 |