CN205564779U - Novel solar PV modules of anti PID effect - Google Patents
Novel solar PV modules of anti PID effect Download PDFInfo
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- CN205564779U CN205564779U CN201521133369.6U CN201521133369U CN205564779U CN 205564779 U CN205564779 U CN 205564779U CN 201521133369 U CN201521133369 U CN 201521133369U CN 205564779 U CN205564779 U CN 205564779U
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- photovoltaic assembly
- solar cell
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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Abstract
The utility model provides a novel solar PV modules of anti PID effect, it includes toughened glass base plate, first encapsulated layer, solar cell string group, second encapsulated layer and solar backplane. Solar cell string group carries on the back field, silicon chip, diffuse layer, silicon nitride layer and passivation layer by the battery and constitutes, and solar cell back of the body field sets up on first encapsulated layer, and the second encapsulated layer sets up on the passivation layer. First and second encapsulated layers include the EVA layer between first and second tie coats and first and second tie coats. Do you for 100 amounts by weights of EVA copolymer, contain a siloxane graft polymers 1 in first and second tie coats 30 weight, peroxide class cross -linking agent 0.4 2.0 amounts by weight, tackifier 0.1 1.5 amounts by weight, anti -oxidant 0.01 1.0 amounts by weight, modifier 0.05 1.0 the amounts by weight. The utility model discloses effectively avoid the emergence of PID effect, prolonged solar cell photovoltaic module's life.
Description
Technical field
The utility model relates to a kind of solar photovoltaic assembly, and particularly to a kind of novel anti-PID effect
The solar photovoltaic assembly answered.
Background technology
Single solar cell can not be directly used as power supply, must be by some cells when as power supply
Series and parallel connects and is tightly packaged into solar photovoltaic assembly.Solar photovoltaic assembly (is also the sun
Energy cell panel) it is the core in solar power system, its effect is to convert solar energy into electricity
Can, or be sent in battery store, or promote loaded work piece.Solar photovoltaic assembly by lower to
Above mainly it is made up of safety glass, EVA, cell piece, EVA, glass fibre, backboard etc..
No matter using which kind of means in reality, solar photovoltaic assembly is the most inevitably by rainwater etc.
Invasion and attack, steam enters component internal by the silica gel of edge sealing or backboard, and the ester bond of EVA is running into water
There is following hydrolysis afterwards, produce the acetic acid that can move freely.
Produced acetic acid causes the alkali of glass surface to react, and produces the Na that can move freely+,
This Na+Move to cell piece surface under the effect of extra electric field and be enriched to anti-reflection layer and cause PID
The generation of (potential inducing decay) effect.PID effect has a strong impact on the use of solar photovoltaic assembly
In the life-span, therefore various countries all expand correlative study.
Utility model content
Utility model problem to be solved
Inventor of the present utility model sums up PID imitates it is believed that it is mainly by having following process:
(1) steam enters photovoltaic module；(2) EVA occurs hydrolysis to result in acetic acid；(3) vinegar
The alkali that acid and glass surface separate out reacts and produces the sodium ion that can move freely；(4)Na+At electric field
Effect be moved to battery surface.
In consideration of it, inventor proposes with above-mentioned (2) and (3) as core, by the following technical programs
Effectively improve PID effect.
The purpose of this utility model is to provide a kind of solar photovoltaic assembly.The utility model provides
Solar photovoltaic assembly, wherein, it is to stack gradually reinforced glass substrate, the first encapsulated layer, the sun
Can battery strings group, the second encapsulated layer and solar energy backboard, it is characterised in that described too
Sun energy battery strings group is by solar cell back surface field, silicon chip, diffusion layer, silicon nitride layer and passivation layer successively
Being laminated, described solar cell back surface field is arranged on described first encapsulated layer, described second encapsulation
Layer is arranged on described passivation layer.
According to one embodiment of the utility model, it is provided that a kind of solar photovoltaic assembly, wherein, institute
State the first encapsulated layer and the second encapsulated layer includes that EVA layer, described EVA layer thickness are
0.30-0.60mm。
According to one embodiment of the utility model, it is provided that a kind of solar photovoltaic assembly, wherein, exist
The both sides of the described EVA layer of described first and second encapsulated layers be further provided with the first tack coat and
Second tack coat.
According to one embodiment of the utility model, it is provided that a kind of solar photovoltaic assembly, wherein, institute
The thickness stating the EVA layer in the second encapsulated layer is 0.45mm.
According to one embodiment of the utility model, it is provided that a kind of solar photovoltaic assembly, wherein, institute
The thickness stating silicon chip is 150-200 μm.
According to one embodiment of the utility model, it is provided that a kind of solar photovoltaic assembly, wherein, institute
Stating diffusion layer is to expand phosphorous layer, and thickness is 0.35-0.55 μm.
According to one embodiment of the utility model, it is provided that a kind of solar photovoltaic assembly, wherein, institute
The thickness stating silicon nitride layer is 75-80nm.
According to one embodiment of the utility model, it is provided that a kind of solar photovoltaic assembly, wherein, institute
Stating passivation layer is SiO2Layer, its thickness is 4-5nm.
According to one embodiment of the utility model, it is provided that a kind of solar photovoltaic assembly, wherein, institute
State first and second tack coats EVA copolymer relative to 100 weight portions, containing 1-30 weight portion
Silicone grafted polymers.
According to one embodiment of the utility model, it is provided that a kind of solar photovoltaic assembly, wherein, institute
State first and second tack coats EVA copolymer relative to 100 weight portions, possibly together with peroxide
Class crosslinking agent 0.4-2.0 weight portion, tackifier 0.1-1.5 weight portion, antioxidant 0.01-1.0 weight portion,
Modifying agent 0.05-1.0 weight portion.
Utility model effect
Solar photovoltaic assembly of the present utility model can effectively reduce EVA because of the infiltration generation of steam
Hydrolysis produces acetic acid, and effectively inhibits Na+The movement of ion, has the most effectively delayed PID effect
Generation evolution so that effectively being extended the service life of solar photovoltaic assembly.
Accompanying drawing explanation
Fig. 1 is the structural representation of solar cell photovoltaic assembly of the present utility model；
Fig. 2 is the structural representation of the solar cell string group of solar photovoltaic assembly of the present utility model
Figure；
Fig. 3 is the structural representation of the first and second encapsulated layers.
Description of reference numerals
1, reinforced glass substrate；
2, the first encapsulated layer；
3, solar cell string group；
31, solar cell back surface field；
32, silicon chip；
33, diffusion layer；
34, silicon nitride layer；
35, passivation layer；
4, the second encapsulated layer；
5, solar energy backboard；
6, the first tack coat；
7, the second tack coat；
8, EVA layer.
It is further elaborated with solar photovoltaic assembly of the present utility model below in conjunction with accompanying drawing, but this
Utility model is not by any restriction of specific examples below.As known to those skilled,
Utility model same or analogous with the utility model, this practicality can be obtained by the conventional displacement of parameter
Novel concrete protection domain should determine with reference to claims.
Detailed description of the invention
As it is shown in figure 1, solar photovoltaic assembly of the present utility model is to stack gradually reinforced glass substrate
1, the first encapsulated layer 2, solar cell string group the 3, second encapsulated layer 4, solar energy backboard 5 form
's.Wherein, described first encapsulated layer and the second encapsulated layer comprise EVA layer 8 and the first tack coat 6
And second tack coat 7.In the utility model, EVA layer have employed the thickness of 0.45mm, but not
Being limited to this, its thickness can select between 0.30-0.60mm, wants comprehensive when selecting it
Consider the needs of water-proof function, the bearing capacity etc. of reinforced glass substrate 1.
Described solar cell string group 3 by solar cell back surface field 31, silicon chip 32, diffusion layer 33,
Silicon nitride layer 34 and passivation layer 35 stack gradually and form.Set in the combination carrying out solar photovoltaic assembly
Timing, described solar cell back surface field 31 is arranged on described first encapsulated layer 2, described second envelope
Dress layer 4 is then further disposed upon on described passivation layer 35.The thickness of described silicon chip 32 is new in this practicality
Type have employed 180 μm, but be not limited to this, can be according to the needs of the power of solar cell string group 3
Select between 150-200 μm.Described diffusion layer 33 is for expanding phosphorous layer, in the utility model
Have employed 0.4 μm, but be not limited to this, can select between 0.35-0.55 μm.Described nitrogen
The thickness of SiClx layer 34 is 75nm in the utility model, but is not limited to this, can exist as required
Select between 75-80nm.Described passivation layer 35 is SiO2Layer, in the utility model, it is thick
Degree have employed the thickness of 5nm, but it is not limited to this, can select between 4-5nm.Blunt
Change layer 35 and can effectively prevent the Na in reinforced glass substrate 1+Move into solar cell string group 3
In, it is also possible to avoid this Na+Separate out and at electricity because of the acetic acid of hydrolysis generation with the first encapsulated layer 2
Move under the effect of field.
Chemical vapour deposition technique (CVD), such as plasma enhanced chemical vapor deposition method can be passed through
(PECVD) coating process obtains described silicon nitride layer 34 and passivation layer 35.
It addition, for the generation avoiding PID effect further, further, it is possible to by reducing by second
The content of the vinylacetate in encapsulated layer 4, improves the purity of the material of the second encapsulated layer 4, adds
Ethylenediamine tetra-acetic acid (EDTA), utilizes its chelate structure, the Na in complexing glass+、K+On metal
Ion, or add and absorb the mode such as ion and improve the resistance of the second encapsulated layer 4, thus stop glass
Na in glass+、K+Migrate to solar cell string group 3, thus strengthen solar photovoltaic assembly 10
Anti-PID performance.But the reduction in order to avoid light transmittance, it is preferable that at the first encapsulated layer 2 and
EVA content in the EVA layer of two encapsulated layers 4 is not less than 35 weight %.
For the enhancing anti-PID ability of further solar cell photovoltaic assembly, can be at the first encapsulated layer
2 and second the both sides of EVA layer of encapsulated layer 4 first tack coat 6 and the second encapsulated layer 7 is set, should
First tack coat 6 and the second tack coat 7 thickness are 20-30 μm, relative to the EVA of 100 weight portions
Copolymer, containing 1-30 weight portion silicone grafted polymers.Silicon in silicone grafted polymers
Oxygen alkane branch terminals has alkoxy grp-Si-OR, and alkoxy grp facile hydrolysis forms silicone hydroxyl-Si-OH,
Silicone hydroxyl again with the hydroxy functional group generation condensation reaction of glass baseplate surface so that packaging adhesive film and glass
Forming firm bonding between glass substrate, prevent steam penetrates into the hydrolysis causing EVA.This
Outward, relative to the EVA of 100 weight portions, the first tack coat 6 and the second tack coat 7 are possibly together with peroxide
Compound class crosslinking agent 0.4-2.0 weight portion, tackifier 0.1-1.5 weight portion, antioxidant 0.01-1.0 weight
Amount part, modifying agent 0.05-1.0 weight portion.
About above-described machinery setting, operating procedure and parameter it should be understood that it is for describing
Property rather than determinate, can be described in description above and claim by the way of equivalent replacement
In the range of make amendment.That is, scope of the present utility model should refer to the four corner of claims
And determine rather than determine with reference to description above.In a word, it should be understood that the utility model energy
Enough carry out multiple correction and change.
Practicality in industry
By solar cell photovoltaic assembly of the present utility model, it is possible to be prevented effectively from sending out of PID effect
Raw, in the notable service life extending solar cell photovoltaic assembly, therefore the utility model has wide
Application prospect.
Claims (8)
1. a solar photovoltaic assembly, it is characterized in that, it stacks gradually reinforced glass substrate, the first encapsulated layer, solar cell string group, the second encapsulated layer and solar energy backboard and forms, described solar cell string group is stacked gradually by solar cell back surface field, silicon chip, diffusion layer, silicon nitride layer and passivation layer and forms, described solar cell back surface field is arranged on described first encapsulated layer, and described second encapsulated layer is arranged on described passivation layer.
Solar photovoltaic assembly the most according to claim 1, it is characterised in that described first encapsulated layer and the second encapsulated layer all include that EVA layer, described EVA layer thickness are 0.30-0.60mm.
Solar photovoltaic assembly the most according to claim 2, it is characterised in that the both sides of described EVA layer are provided with the first tack coat and the second tack coat.
Solar photovoltaic assembly the most according to claim 2, it is characterised in that the thickness of described EVA layer is 0.45mm.
Solar photovoltaic assembly the most according to claim 1 and 2, it is characterised in that the thickness of described silicon chip is 150-200 μm.
Solar photovoltaic assembly the most according to claim 1 and 2, it is characterised in that described diffusion layer is for expanding phosphorous layer, and thickness is 0.35-0.55 μm.
Solar photovoltaic assembly the most according to claim 1 and 2, it is characterised in that the thickness of described silicon nitride layer is 75-80nm.
Solar photovoltaic assembly the most according to claim 1, it is characterised in that described passivation layer is SiO2Layer, its thickness is 4-5nm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201521133369.6U CN205564779U (en) | 2015-12-31 | 2015-12-31 | Novel solar PV modules of anti PID effect |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201521133369.6U CN205564779U (en) | 2015-12-31 | 2015-12-31 | Novel solar PV modules of anti PID effect |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN205564779U true CN205564779U (en) | 2016-09-07 |
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ID=56822692
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201521133369.6U Expired - Fee Related CN205564779U (en) | 2015-12-31 | 2015-12-31 | Novel solar PV modules of anti PID effect |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN205564779U (en) |
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2015
- 2015-12-31 CN CN201521133369.6U patent/CN205564779U/en not_active Expired - Fee Related
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| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20160907 Termination date: 20181231 |