CN102184990B - Crystalline silicon photovoltaic module for building integrated photovoltaic - Google Patents
Crystalline silicon photovoltaic module for building integrated photovoltaic Download PDFInfo
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- CN102184990B CN102184990B CN2011100705846A CN201110070584A CN102184990B CN 102184990 B CN102184990 B CN 102184990B CN 2011100705846 A CN2011100705846 A CN 2011100705846A CN 201110070584 A CN201110070584 A CN 201110070584A CN 102184990 B CN102184990 B CN 102184990B
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- photovoltaic
- crystalline silicon
- building integrated
- photovoltaic module
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02A—TECHNOLOGIES FOR ADAPTATION TO CLIMATE CHANGE
- Y02A30/00—Adapting or protecting infrastructure or their operation
- Y02A30/60—Planning or developing urban green infrastructure
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B10/00—Integration of renewable energy sources in buildings
- Y02B10/10—Photovoltaic [PV]
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Photovoltaic Devices (AREA)
- Joining Of Glass To Other Materials (AREA)
Abstract
The invention discloses a crystalline silicon photovoltaic module for building integrated photovoltaic, which is characterized by comprising a toughened glass layer (1) at the bottom layer, a strong impact resistance glass combination layer (4) with a multi-layer structure at the top layer and two layers of sealing adhesive films (2) at an intermediate layer, wherein a crystalline silicon cell (3) is clamped between the two layers of sealing adhesive films (2). The crystalline silicon photovoltaic module for the building integrated photovoltaic, provided by the invention, can resist strong mechanical impact such as bullet impact and the like without being penetrated, can keep complete performance and can be applied to buildings of military or civil special units such as anti-riot, anti-bullet and the like.
Description
Technical field
The present invention relates to a kind of crystalline silicon photovoltaic module for building integrated photovoltaic, belong to the solar-photovoltaic technology field.
Background technology
In numerous energy, solar energy power generating is tool technology content and the mode of development prospect in the new and renewable sources of energy.Under solar light irradiation, be the device of electric energy with light energy conversion and solar photovoltaic battery component is comprised of glass, crystalline silicon battery plate, wire, termination, binding material etc.The BIPV technology that is integrated that recently photovoltaic generating system and building organically blended just is widely used, compare with traditional solar cell occupation mode, photovoltaic and architecture-integral have numerous advantages: for example photovoltaic and architecture-integral make the part of building material cost become the part of photovoltaic cell, have saved the production cost of photovoltaic cell; Can also effectively utilize sunlit space, save land resource; Institute's electricity at first uses for this building, gets final product original place generating, original place use, can save the investment of power station pushing electric network and reduce transmission of electricity, minute electrical loss.But new application has proposed requirements at the higher level to the performance of Crystalline Silicon PV Module in architecture-integral, as is applied in the ability that needs to have the more high-intensity anti-mechanical shock that the opposing bullet runs through on the military or civilian special unit building such as anti-riot, shellproof.At present traditional its overall structure of the Crystalline Silicon PV Module that is applied to BIPV is as follows: topmost one deck is the ultra-white photovoltaic glass of printing opacity, the centre is crystalline silicon battery plate, the bottom is toughened glass, all uses the EVA material bonding between each layer, and integral body is fixed with aluminum alloy frame.The photovoltaic module of the architecture-integral of this structure is comparatively thin, although can pass through the standard of the detection of IEC61215, as satisfy anti-130km/h (2,400Pa) the requirement of the impact of blast and anti-25mm diameter hail 23m/s prevents that firearm cartridge from running through the requirement of personal damage in institute's building that causes and assembly damage but be difficult to satisfy.
Summary of the invention
The object of the invention is to, provide a kind of and can resist the strong mechanical shock such as bullet impact and do not run through and can the complete crystalline silicon photovoltaic module for building integrated photovoltaic of retention, can be applied on the military or civilian special unit building such as anti-riot, shellproof.
Technical scheme of the present invention: a kind of crystalline silicon photovoltaic module for building integrated photovoltaic, it is characterized in that: the toughened glass layer that comprises bottom, the glass combination layer of the resisting strong impact with sandwich construction of top layer, the intermediate layer is two-layer sealed Cellophane, accompanies crystal silicon cell between the two-layer sealed Cellophane.
In the aforesaid crystalline silicon photovoltaic module for building integrated photovoltaic, described glass combination layer with resisting strong impact of sandwich construction has photovoltaic ultra-clear glasses layer, upper strata polyurethane adhesive rete, Merlon flaggy, lower floor's polyurethane adhesive rete and ultrawhite toughened glass layer from top to bottom successively.In said structure: photovoltaic ultra-clear glasses layer not only can be used as the antireflection layer but also can be used as bearing layer, and this layer at first withstands shocks and breaks, and can destroy bullet or change warhead form, makes it lose the ability that moves on; The polyurethane adhesive rete is adhesive linkage and transition zone, has the advantages such as bonding force is strong, light resistance is good, and energy absorption portion impact energy changes the bullet direction of advance, also has antisurge and impacts performances such as stoping the crackle generation; The Merlon flaggy is safe protective covering, and preferably elasticity and toughness are arranged, and can absorb most impact energys, and guarantees that bullet can not pass this layer.
In the aforesaid crystalline silicon photovoltaic module for building integrated photovoltaic, described toughened glass layer thickness is 2～4mm, and the every layer thickness of sealed Cellophane is 0.1～1mm.
In the aforesaid crystalline silicon photovoltaic module for building integrated photovoltaic, the thickness of described photovoltaic ultra-clear glasses layer, upper strata polyurethane adhesive rete, Merlon flaggy, lower floor's polyurethane adhesive rete and ultrawhite toughened glass layer is respectively 3～5mm, 0.3～1.5mm, 0.1～3mm, 0.3～1.5mm and 1～4mm.
In the aforesaid crystalline silicon photovoltaic module for building integrated photovoltaic, described sealed Cellophane material is a kind of in polyvinyl butyral resin or the ethylene-vinyl acetate copolymer.
Compared with prior art, the invention enables crystalline silicon photovoltaic module for building integrated photovoltaic can resist the strong mechanical shock such as bullet impact and do not run through and can retention complete, thereby this photovoltaic module can be applied on the military or civilian special unit building such as anti-riot, shellproof, satisfy the requirement of the shellproof grade of F79-M among the GB17840-1999.
Description of drawings
Fig. 1 is structural representation of the present invention;
Fig. 2 is the structural representation of glass combination layer of the present invention.
Mark in the accompanying drawing: 1-toughened glass layer, 2-sealed Cellophane, 3-crystal silicon cell, 4-glass combination layer, 41-photovoltaic ultra-clear glasses layer, 42-upper strata polyurethane adhesive rete, 43-Merlon flaggy, 44-lower floor polyurethane adhesive rete, 45-ultrawhite toughened glass layer.
Embodiment
The present invention is further illustrated below in conjunction with drawings and Examples, but not as the foundation to the present invention's restriction.(asking the lawyer of patent agency to take the circumstances into consideration to write)
Embodiment.A kind of crystalline silicon photovoltaic module for building integrated photovoltaic, as shown in Figure 1: the toughened glass layer 1 that comprises bottom 2～4mm, the glass combination layer 4 of the resisting strong impact with sandwich construction of top layer, the intermediate layer is two-layer sealed Cellophane 2, every layer thickness is 0.1～1mm, accompanies crystal silicon cell 3 between the two-layer sealed Cellophane 2.Described sealed Cellophane 2 materials are a kind of in polyvinyl butyral resin or the ethylene-vinyl acetate copolymer.
Described glass combination layer 4 (as shown in Figure 2) with resisting strong impact of sandwich construction has the photovoltaic ultra-clear glasses layer 41 of 3～5mm, the upper strata polyurethane adhesive rete 42 of 0.3～1.5mm, the Merlon flaggy 43 of 0.1～3mm, lower floor's polyurethane adhesive rete 44 of 0.3～1.5mm and the ultrawhite toughened glass layer 45 of 1～4mm from top to bottom successively.
Claims (4)
1. crystalline silicon photovoltaic module for building integrated photovoltaic, it is characterized in that: the toughened glass layer (1) that comprises bottom, the glass combination layer (4) of the resisting strong impact with sandwich construction of top layer, the intermediate layer is two-layer sealed Cellophane (2), accompany crystal silicon cell (3) between the two-layer sealed Cellophane (2), described glass combination layer (4) with resisting strong impact of sandwich construction has photovoltaic ultra-clear glasses layer (41) from top to bottom successively, upper strata polyurethane adhesive rete (42), Merlon flaggy (43), lower floor's polyurethane adhesive rete (44) and ultrawhite toughened glass layer (45).
2. crystalline silicon photovoltaic module for building integrated photovoltaic according to claim 1, it is characterized in that: described toughened glass layer (1) thickness is 2 ~ 4mm, the every layer thickness of sealed Cellophane (2) is 0.1 ~ 1mm.
3. crystalline silicon photovoltaic module for building integrated photovoltaic according to claim 1, it is characterized in that: the thickness of described photovoltaic ultra-clear glasses layer (41), upper strata polyurethane adhesive rete (42), Merlon flaggy (43), lower floor's polyurethane adhesive rete (44) and ultrawhite toughened glass layer (45) is respectively 3 ~ 5mm, 0.3 ~ 1.5mm, 0.1 ~ 3mm, 0.3 ~ 1.5mm and 1 ~ 4mm.
4. each described crystalline silicon photovoltaic module for building integrated photovoltaic according to claim 1-3 is characterized in that: described sealed Cellophane (2) material is a kind of in polyvinyl butyral resin or the ethylene-vinyl acetate copolymer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011100705846A CN102184990B (en) | 2011-03-23 | 2011-03-23 | Crystalline silicon photovoltaic module for building integrated photovoltaic |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011100705846A CN102184990B (en) | 2011-03-23 | 2011-03-23 | Crystalline silicon photovoltaic module for building integrated photovoltaic |
Publications (2)
| Publication Number | Publication Date |
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| CN102184990A CN102184990A (en) | 2011-09-14 |
| CN102184990B true CN102184990B (en) | 2013-04-17 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN2011100705846A Expired - Fee Related CN102184990B (en) | 2011-03-23 | 2011-03-23 | Crystalline silicon photovoltaic module for building integrated photovoltaic |
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Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104362195B (en) * | 2014-10-27 | 2017-05-31 | 深圳市鑫明光实业有限公司 | A kind of photovoltaic panel |
| CN106129154A (en) * | 2016-08-23 | 2016-11-16 | 江苏亚太新能源科技有限公司 | Solar energy photovoltaic glass |
| CN110712407A (en) * | 2018-07-13 | 2020-01-21 | 汉能移动能源控股集团有限公司 | Bulletproof glass capable of generating power and preparation method thereof |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1190083A (en) * | 1997-02-01 | 1998-08-12 | 洛阳市伊川夹层玻璃厂 | Production of anti-shock bulletproof glass |
| CN2498243Y (en) * | 2001-08-24 | 2002-07-03 | 谷中武 | Photoelectric glass screen wall |
| CN2671131Y (en) * | 2003-12-18 | 2005-01-12 | 深圳市创益科技发展有限公司 | Anti-impact solar battery assembly |
-
2011
- 2011-03-23 CN CN2011100705846A patent/CN102184990B/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1190083A (en) * | 1997-02-01 | 1998-08-12 | 洛阳市伊川夹层玻璃厂 | Production of anti-shock bulletproof glass |
| CN2498243Y (en) * | 2001-08-24 | 2002-07-03 | 谷中武 | Photoelectric glass screen wall |
| CN2671131Y (en) * | 2003-12-18 | 2005-01-12 | 深圳市创益科技发展有限公司 | Anti-impact solar battery assembly |
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| CN102184990A (en) | 2011-09-14 |
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