CN205564770U - Photovoltaic polycrystal battery piece - Google Patents
Photovoltaic polycrystal battery piece Download PDFInfo
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- CN205564770U CN205564770U CN201620348718.4U CN201620348718U CN205564770U CN 205564770 U CN205564770 U CN 205564770U CN 201620348718 U CN201620348718 U CN 201620348718U CN 205564770 U CN205564770 U CN 205564770U
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- silicon chip
- polycrystal silicon
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- polycrystalline silicon
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Abstract
The utility model discloses a photovoltaic polycrystal battery piece, which comprises a body, the body surface is equipped with main grid line and vice grid line, and mutually perpendicular between main grid line and the vice grid line, the body includes P type polycrystal silicon chip and N type polycrystal silicon chip, it switches on the district to be equipped with between P type polycrystal silicon chip and the N type polycrystal silicon chip, P type polycrystal silicon chip sets up in the upside of N type polycrystal silicon chip, P type polycrystal silicon chip both sides are equipped with the electrode, the upside of P type polycrystal silicon chip is equipped with P type polysilicon film, N type polycrystal silicon chip both sides are equipped with the bottom electrode, N type polycrystal silicon chip downside is equipped with N type polysilicon film, the body surface is equipped with transparent conducting film, the transparent conducting film outside is equipped with the body protection film. The utility model discloses a body surface is concavo -convexly, has increased the extinction area to make the extinction ability strengthen, improved conversion efficiency, and its photoelectric conversion performance is very stable, has improved life.
Description
Technical field
This utility model relates to technical field of photovoltaic power generation, is specially a kind of photovoltaic polycrystalline cell piece.
Background technology
Along with the development of global economy, the consumption sharp increase of the energy, most energy are Fossil fuels, and not only resource day by day reduces, and the gas discharges such as great amount of carbon dioxide, make environmental problem the most serious.Therefore, increasingly pay attention to regenerative resource both at home and abroad, the particularly exploitation of photovoltaic generation, in 10 years of past, whole world photovoltaic industry maintains rapid growth, one of topmost industry of rear drive global economic development the most progressively becoming the microelectronic industry that continues, for the sustainable benign development of new and high technology photovoltaic industry, research and development low cost, eco-friendly production technology are particularly important.Purification technique production capacity is big, production technology simple, purifying technique is not related to chemical process and advantages of environment protection because having for the technique of metallurgy method purifying polycrystalline silicon, and the polycrystalline silicon solar cell material using metallurgy method to purify most possibly replaces improvement
The HIGH-PURITY SILICON solar cell material that Siemens Method produces, it has huge market potential and development space.At present, metallurgy method purifying polycrystalline silicon international, domestic and making high performance solar batteries technology, all do not form scale.Therefore explore for the key link in metallurgy polycrystalline silicon battery production, develop efficient solar battery, to reaching the target of photovoltaic generation low cost industrialization, become an important topic, therefore, it is proposed to a kind of photovoltaic polycrystalline cell piece.
Utility model content
The purpose of this utility model is to provide a kind of photovoltaic polycrystalline cell piece, with the problem solving to propose in above-mentioned background technology.
For achieving the above object, this utility model following technical scheme of offer: a kind of photovoltaic polycrystalline cell piece, including body, described body surface is provided with main gate line and secondary grid line, and be mutually perpendicular between main gate line and secondary grid line, described body includes p-type polysilicon sheet and N-type polycrystalline silicon sheet, conducting district it is provided with between described p-type polysilicon sheet and N-type polycrystalline silicon sheet, described p-type polysilicon sheet is arranged at the upside of N-type polycrystalline silicon sheet, described p-type polysilicon sheet both sides are provided with electrode, the upside of described p-type polysilicon sheet is provided with p-type polysilicon film, described N-type polycrystalline silicon sheet both sides are provided with bottom electrode, it is provided with N-type polycrystalline silicon film on the downside of described N-type polycrystalline silicon sheet, described body surface is provided with nesa coating, main body protection film it is provided with outside described nesa coating.
Preferably, described body upper surface concave-convex surface.
Preferably, it is parallel to each other between described main gate line, is parallel to each other between described secondary grid line.
Compared with prior art, the beneficial effects of the utility model are: this photovoltaic polycrystalline cell piece passes through body surface concave-convex surface, increases extinction area, so that absorbing ability strengthens, improve conversion efficiency, and its opto-electronic conversion performance is the most stable, improves service life.
Accompanying drawing explanation
Fig. 1 is this utility model structural representation；
Fig. 2 is this utility model body construction schematic diagram.
In figure: 1 body, 2 main gate line, 3 secondary grid lines, 4 p-type polysilicon sheets, 41 p-type polysilicon films, 5 N-type polycrystalline silicon sheets, 51 N-type polycrystalline silicon films, 6 main body protection films, 7 nesa coatings, electrode, 9 bottom electrodes, 10 conducting districts on 8.
Detailed description of the invention
Below in conjunction with the accompanying drawing in this utility model embodiment, the technical scheme in this utility model embodiment is clearly and completely described, it is clear that described embodiment is only a part of embodiment of this utility model rather than whole embodiments.Based on the embodiment in this utility model, the every other embodiment that those of ordinary skill in the art are obtained under not making creative work premise, broadly fall into the scope of this utility model protection.
nullRefer to Fig. 1-2，A kind of technical scheme of this utility model offer: a kind of photovoltaic polycrystalline cell piece，Including body 1，Described body 1 surface is provided with main gate line 2 and secondary grid line 3，And be mutually perpendicular between main gate line 2 and secondary grid line 3，Described body 1 includes p-type polysilicon sheet 4 and N-type polycrystalline silicon sheet 5，Conducting district 10 it is provided with between described p-type polysilicon sheet 4 and N-type polycrystalline silicon sheet 5，Described p-type polysilicon sheet 4 is arranged at the upside of N-type polycrystalline silicon sheet 5，Described p-type polysilicon sheet 4 both sides are provided with electrode 8，The upside of described p-type polysilicon sheet 4 is provided with p-type polysilicon film 41，Described N-type polycrystalline silicon sheet 5 both sides are provided with bottom electrode 9，It is provided with N-type polycrystalline silicon film 51 on the downside of described N-type polycrystalline silicon sheet 5，Described body 1 surface is provided with nesa coating 7，It is provided with main body protection film 6 outside described nesa coating 7，Described body 1 upper surface concave-convex surface，It is parallel to each other between described main gate line 2，It is parallel to each other between described secondary grid line 3.
Operation principle: during work; by body 1 surface concave-convex surface; favorably decrease reflectance; so that absorbing ability strengthens; nesa coating 7 in concavo-convex downside increases the absorptance of polysilicon chip; service life of the present utility model is added by the main body protection film 6 outside body 1, stablizing of p-type polysilicon film 41 p-type polysilicon sheet 4 and N-type polycrystalline silicon sheet 5 with N-type polycrystalline silicon film 51 effective guarantee, improve the efficiency of opto-electronic conversion.
Embodiment the most of the present utility model, for the ordinary skill in the art, being appreciated that in the case of without departing from principle of the present utility model and spirit and these embodiments can carry out multiple change, revise, replace and modification, scope of the present utility model is defined by the appended claims and the equivalents thereof.
Claims (3)
- null1. a photovoltaic polycrystalline cell piece，Including body (1)，It is characterized in that: described body (1) surface is provided with main gate line (2) and secondary grid line (3)，And be mutually perpendicular between main gate line (2) and secondary grid line (3)，Described body (1) includes p-type polysilicon sheet (4) and N-type polycrystalline silicon sheet (5)，Conducting district (10) it is provided with between described p-type polysilicon sheet (4) and N-type polycrystalline silicon sheet (5)，Described p-type polysilicon sheet (4) is arranged at the upside of N-type polycrystalline silicon sheet (5)，Described p-type polysilicon sheet (4) both sides are provided with electrode (8)，The upside of described p-type polysilicon sheet (4) is provided with p-type polysilicon film (41)，Described N-type polycrystalline silicon sheet (5) both sides are provided with bottom electrode (9)，Described N-type polycrystalline silicon sheet (5) downside is provided with N-type polycrystalline silicon film (51)，Described body (1) surface is provided with nesa coating (7)，Described nesa coating (7) outside is provided with main body protection film (6).
- A kind of photovoltaic polycrystalline cell piece the most according to claim 1, it is characterised in that: described body (1) upper surface concave-convex surface.
- A kind of photovoltaic polycrystalline cell piece the most according to claim 1, it is characterised in that: described main gate line is parallel to each other between (2), is parallel to each other between described secondary grid line (3).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620348718.4U CN205564770U (en) | 2016-04-22 | 2016-04-22 | Photovoltaic polycrystal battery piece |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620348718.4U CN205564770U (en) | 2016-04-22 | 2016-04-22 | Photovoltaic polycrystal battery piece |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN205564770U true CN205564770U (en) | 2016-09-07 |
Family
ID=56806169
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201620348718.4U Expired - Fee Related CN205564770U (en) | 2016-04-22 | 2016-04-22 | Photovoltaic polycrystal battery piece |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN205564770U (en) |
-
2016
- 2016-04-22 CN CN201620348718.4U patent/CN205564770U/en not_active Expired - Fee Related
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20160907 Termination date: 20210422 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |