CN205542778U - Base plate and display device - Google Patents
Base plate and display device Download PDFInfo
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- CN205542778U CN205542778U CN201620070534.6U CN201620070534U CN205542778U CN 205542778 U CN205542778 U CN 205542778U CN 201620070534 U CN201620070534 U CN 201620070534U CN 205542778 U CN205542778 U CN 205542778U
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Abstract
The utility model relates to a show technical field, in particular to base plate and display device. This base plate includes that the signal walks line and static electricity discharge bus, and the signal is walked and is equipped with thin film transistor between line and the static electricity discharge bus, and thin film transistor includes source electrode, drain electrode, active layer and the floating gate structure relative with the active layer, source electrode and signal are walked the line electricity and are connected, and the drain electrode is connected with the static electricity discharge bus is electric, floating gate structure and signal are walked to be equipped with at least a pair of point discharge structure between the line, and/or are equipped with at least a pair of point discharge structure between floating gate structure and the static electricity discharge bus. Above -mentioned base plate releases static through setting up the point discharge structure of walking between line and the static electricity discharge bus at thin film transistor and signal fast to the space that the structure that is used for releasing static in the base plate took is less, is favorable to in the base plate structure and walks the overall arrangement of line.
Description
Technical field
This utility model relates to Display Technique field, particularly to a kind of substrate and display device.
Background technology
Existing display device, in order to reach the purpose of antistatic, is typically provided with Electro-static Driven Comb (ESD) on substrate
Device.Existing static release device uses FGS floating gate structure (Gate Floating) release excess charge, quiet
The circuit theory diagrams of electricity release device are as it is shown in figure 1, at holding wire (Signal Line) B and bus (Bus
Line) between A, connection has thin film transistor (TFT) (TFT) 101, coupling electric capacity C1 and coupling electric capacity C2, and
And one of them couples between FGS floating gate structure and the source electrode that electric capacity C1 is arranged on thin film transistor (TFT) 101, separately
One coupling electric capacity C2 is connected between FGS floating gate structure and the drain electrode of thin film transistor (TFT) 101.
Static release device, in course of normal operation, in order to reduce leakage current, and ensures that signal normally works,
Need coupling electric capacity C1 sufficiently large with what the capacitance of coupling electric capacity C2 was arranged, and couple the electricity of electric capacity
The volume coupling electric capacity when capacitance is bigger is the biggest, causes needing to take bigger arrangement space, therefore, existing
It is unfavorable for structure and the problem of cabling layout because taking bigger arrangement space with the presence of static release device.
Utility model content
This utility model provides a kind of substrate and display device, and in this substrate, the structure for release electrostatic accounts for
Space less, beneficially structure and the layout of cabling in substrate.
For reaching above-mentioned purpose, this utility model offer techniques below scheme:
A kind of substrate, including signal lead and Electro-static Driven Comb bus, described signal lead and described Electro-static Driven Comb
Be provided with thin film transistor (TFT) between bus, described thin film transistor (TFT) include source electrode, drain electrode, active layer and with
The FGS floating gate structure that described active layer is relative；Described source electrode electrically connects with described signal lead, described drain electrode
Electrically connect with described Electro-static Driven Comb bus；It is provided with at least one pair of between described FGS floating gate structure and described signal lead
At least one pair of it is provided with most advanced and sophisticated between point discharge structure, and/or described FGS floating gate structure and described Electro-static Driven Comb bus
Discharging structure.
In aforesaid substrate, at least one pair of point discharge structure being provided with between FGS floating gate structure and signal lead is used
In:
When there is instant high-voltage because gathering more electrostatic charge in signal lead, signal lead can be passed through
At least one pair of point discharge structure arranged between itself and FGS floating gate structure carries out point discharge, and then makes floating boom tie
Structure has high potential, and then, the active layer of thin film transistor (TFT) is converted to conductor shape under the effect of FGS floating gate structure
State, and then source electrode and the drain electrode of thin film transistor (TFT) are turned on, so that be collected in signal lead is quiet
Electric charge flows to Electro-static Driven Comb bus by the thin film transistor (TFT) of transient switching and carries out Electro-static Driven Comb.
In like manner, in aforesaid substrate, at least one pair of being provided with between FGS floating gate structure and Electro-static Driven Comb bus is most advanced and sophisticated
Discharging structure is used for:
When instant high-voltage occurring because gathering more electrostatic charge in Electro-static Driven Comb bus, Electro-static Driven Comb bus
Point discharge can be carried out by least one pair of point discharge structure arranged between itself and FGS floating gate structure, and then make
FGS floating gate structure has high potential, and then, the active layer of thin film transistor (TFT) is converted under the effect of FGS floating gate structure
Conductive state, and then source electrode and the drain electrode of thin film transistor (TFT) are turned on, make to be collected at Electro-static Driven Comb bus
On electrostatic charge flow to signal lead by the thin film transistor (TFT) of transient switching and carry out Electro-static Driven Comb.
Aforesaid substrate can be released with signal lead and/or electrostatic by being arranged on the FGS floating gate structure of thin film transistor (TFT)
Put the quick release electrostatic of the point discharge structure between bus because point discharge structure have simple in construction and
The feature that volume is little, so the space that the structure being used for release electrostatic in substrate takies is less, beneficially substrate
Middle structure and the layout of cabling.
Preferably, the active layer of described thin film transistor (TFT) is oxide semiconductor material.
Preferably, described Electro-static Driven Comb bus is provided with and prolongs one to one with signal lead described at least one
Extending portion；In every a pair signal lead the most corresponding and extension:
At least one of bearing of trend of described extension is parallel with the bearing of trend of described signal lead, and
A described thin film transistor (TFT) it is provided with between described extension and described signal lead；Described thin film transistor (TFT)
In, drain electrode electrically connects with described extension；The length direction of described FGS floating gate structure prolongs with described signal lead
Stretch direction parallel, and the point discharge structure between described FGS floating gate structure and described Electro-static Driven Comb bus is positioned at institute
State between FGS floating gate structure and described extension.
Preferably, described Electro-static Driven Comb bus is provided with signal lead described at least one one to one
Extension；In every a pair signal lead the most corresponding and extension:
At least one of bearing of trend of described extension is parallel with the bearing of trend of described signal lead, and
A described thin film transistor (TFT) it is provided with between described extension and described signal lead；Described thin film transistor (TFT)
In, drain electrode electrically connects with described extension；The length direction of described FGS floating gate structure prolongs with described signal lead
Stretch direction vertical, and the point discharge structure between described FGS floating gate structure and described Electro-static Driven Comb bus is positioned at institute
State between FGS floating gate structure and described extension.
Preferably, the bearing of trend of described signal lead intersects with the bearing of trend of described Electro-static Driven Comb bus,
In thin film transistor (TFT) between described signal lead and described Electro-static Driven Comb bus, the length direction of FGS floating gate structure
Parallel with the bearing of trend of described signal lead, or, the length direction of FGS floating gate structure and described Electro-static Driven Comb
The bearing of trend of bus is parallel.
Preferably, set between at least one described thin film transistor (TFT) has FGS floating gate structure and described signal lead
Having two to described point discharge structure, along the length direction of described FGS floating gate structure, described point discharge is tied by two
In structure, a pair point discharge structure is arranged at the active layer side of described thin film transistor (TFT), and tip is put by another
Electricity structure is arranged at the opposite side of the active layer of described thin film transistor (TFT).
Preferably, between described FGS floating gate structure and described Electro-static Driven Comb bus, it is provided with a pair point discharge structure,
Along the length direction of described FGS floating gate structure, the tip between described FGS floating gate structure and described Electro-static Driven Comb bus is put
Electricity structure is in the middle part of described FGS floating gate structure.
Preferably, between described FGS floating gate structure and described Electro-static Driven Comb bus, it is provided with a pair point discharge structure,
A pair point discharge structure it is provided with, along described FGS floating gate structure between described FGS floating gate structure and described signal lead
Length direction, a pair point discharge structure between described FGS floating gate structure and described Electro-static Driven Comb bus is arranged at
The active layer side of described thin film transistor (TFT), a pair between described FGS floating gate structure and described signal lead is most advanced and sophisticated
Discharging structure is arranged at the opposite side of the active layer of described thin film transistor (TFT).
Preferably, described substrate is the thin film transistor base plate being provided with data wire and grid line, described data wire and
/ or grid line form described signal lead.
Preferably, described substrate is the touch base plate being provided with touch-control cabling, and described touch-control cabling forms described letter
Number cabling.
Preferably, described substrate is the color membrane substrates being provided with public electrode wire, and described public electrode wire forms institute
State signal lead.
Preferably, described substrate is the OLED backboard being provided with power signal line, and described power signal line is formed
Described signal lead.
Preferably, described FGS floating gate structure and described signal lead are arranged with layer, or, described FGS floating gate structure with
Described Electro-static Driven Comb bus is arranged with layer.
It addition, this utility model additionally provides a kind of display device, this display device includes technique scheme
Any one substrate provided.
Accompanying drawing explanation
Fig. 1 is the operation principle schematic diagram of static release device in prior art；
The Electro-static Driven Comb operation principle schematic diagram of a kind of substrate that Fig. 2 provides for this utility model embodiment；
The structural representation of the static release circuit of a kind of substrate that Fig. 3 provides for this utility model embodiment；
The another kind of structure of the static release circuit of a kind of substrate that Fig. 4 provides for this utility model embodiment is shown
It is intended to；
The first of the static release circuit of a kind of substrate that Fig. 5 provides for this utility model embodiment arranges shape
Formula；
The second of the static release circuit of a kind of substrate that Fig. 6 provides for this utility model embodiment arranges shape
Formula；
The third of the static release circuit of a kind of substrate that Fig. 7 provides for this utility model embodiment arranges shape
Formula；
4th kind of layout shape of the static release circuit of a kind of substrate that Fig. 8 provides for this utility model embodiment
Formula.
Detailed description of the invention
Below in conjunction with the accompanying drawing in this utility model embodiment, to the technical side in this utility model embodiment
Case is clearly and completely described, it is clear that described embodiment is only that this utility model part is real
Execute example rather than whole embodiments.Based on the embodiment in this utility model, ordinary skill people
The every other embodiment that member is obtained under not making creative work premise, broadly falls into this utility model
The scope of protection.
This utility model embodiment provides a kind of substrate and display device, and display device includes substrate, this base
The thin film transistor (TFT) of plate includes the FGS floating gate structure relative with active layer, sets between FGS floating gate structure and signal lead
Have between at least one pair of point discharge structure, and/or FGS floating gate structure and Electro-static Driven Comb bus and be provided with at least one pair of point
End discharging structure is less, beneficially in substrate for space that the structure of release electrostatic takies in aforesaid substrate
Structure and the layout of cabling.
Aforesaid substrate is the substrate being provided with the components and parts being arranged in array, and wherein, components and parts can be switch
The components and parts such as element, optical element, sensing element；Substrate can be thin film transistor base plate, color membrane substrates,
Touch base plate, OLED backboard etc..
Above-mentioned signal lead is the cabling for transmitting electrical signal, such as: scanning signal lead, data letter
Number cabling, public electrode cabling, touching signals cabling, power supply signal cabling etc..
Wherein, refer to Fig. 2 and Fig. 3, a kind of substrate that a kind of embodiment of this utility model provides, bag
Include signal lead SL and Electro-static Driven Comb bus B L, set between signal lead SL and Electro-static Driven Comb bus B L
Have thin film transistor (TFT) 1, thin film transistor (TFT) 1 include source electrode 11, drain electrode 12, active layer 14 and with have
The FGS floating gate structure 13 that active layer 14 is relative；Source electrode 11 electrically connects with signal lead SL, drain electrode 12 with
Electro-static Driven Comb bus B L electrically connects；At least one pair of it is provided with most advanced and sophisticated between FGS floating gate structure 13 and signal lead SL
Discharging structure 3, tip is put by two shown in a pair point discharge structure 3 and Fig. 4 as shown in Figure 3
Electricity is provided with at least one pair of point discharge knot between structure 3, and/or FGS floating gate structure 13 and Electro-static Driven Comb bus B L
Structure 2, a pair point discharge structure shown in a pair point discharge structure 2 and Fig. 4 as shown in Figure 3
2。
In aforesaid substrate, at least one pair of point discharge being provided with between FGS floating gate structure 13 and signal lead SL
Structure 3 is used for:
When instant high-voltage occurring because gathering more electrostatic charge in signal lead SL, signal lead SL
Point discharge can be carried out by least one pair of point discharge structure 3 arranged between itself and FGS floating gate structure 13,
And then make FGS floating gate structure 13 have high potential, and then, the active layer 14 of thin film transistor (TFT) 1 is at FGS floating gate structure
Conductive state is converted under the effect of 13, and then by the source electrode 11 of thin film transistor (TFT) 1 and drain electrode 12
Conducting, so that the electrostatic charge being collected in signal lead SL is flowed by the thin film transistor (TFT) 1 of transient switching
Electro-static Driven Comb is carried out to Electro-static Driven Comb bus B L.
In like manner, in aforesaid substrate, at least be provided with between FGS floating gate structure 13 and Electro-static Driven Comb bus B L
Point discharge structure 2 is used for:
When instant high-voltage occurring because gathering more electrostatic charge in Electro-static Driven Comb bus B L, Electro-static Driven Comb
Bus B L can carry out tip by least one pair of point discharge structure 2 arranged between itself and FGS floating gate structure 13
Electric discharge, and then make FGS floating gate structure 13 have high potential, and then, the active layer 14 of thin film transistor (TFT) 1 is floating
Conductive state is converted under the effect of grid structure 13, and then by the source electrode 11 of thin film transistor (TFT) 1 and electric leakage
Pole 12 turns on, and makes to be collected at the thin film transistor (TFT) by transient switching of the electrostatic charge in Electro-static Driven Comb bus B L
1 flows to signal lead SL carries out Electro-static Driven Comb.
Aforesaid substrate can by be arranged on the FGS floating gate structure 13 of thin film transistor (TFT) 1 and signal lead SL and/
Or the quick release electrostatic of point discharge structure between Electro-static Driven Comb bus B L, because point discharge structure tool
There are simple in construction and the little feature of volume, so in substrate for space that the structure of release electrostatic takies relatively
Little, beneficially structure and the layout of cabling in substrate.
Specifically, the active layer 14 of thin film transistor (TFT) 1 is oxide semiconductor material.
Owing to the active layer 14 of thin film transistor (TFT) 1 is oxide semiconductor material, therefore, this active layer 14
The channel length (Channel Length) of thin film transistor (TFT) 1 can be increased, and it is brilliant to effectively reduce thin film
The threshold voltage shift (Vth shift) of body pipe 1 and oxide thin film transistor (oxide TFT) electric leakage band
The impact come, moreover it is possible to reduce arrangement space further.
In the substrate that above-described embodiment provides, signal lead SL, Electro-static Driven Comb bus B L and FGS floating gate structure
13 can have a following multiple arrangement:
Mode one: as shown in Fig. 5 structure, signal lead SL is parallel with Electro-static Driven Comb bus B L, electrostatic
Release bus B L is provided with and a plurality of signal lead SL extension one to one, such as structure institute in Fig. 5
Extension BL1, the extension BL2 shown to extension BLn；Every a pair signal lead SL the most corresponding
With in extension:
At least one of bearing of trend of extension is parallel with the bearing of trend of signal lead SL, and extends
A thin film transistor (TFT) 1 it is provided with between portion and signal lead SL；In thin film transistor (TFT) 1, drain electrode 12 with
Extension electrically connects；The length direction of FGS floating gate structure 13 is parallel with signal lead SL bearing of trend, and floating boom
Point discharge structure 2 between structure 13 and Electro-static Driven Comb bus B L is positioned at FGS floating gate structure 13 and extension
Between.
Mode two: as shown in Fig. 6 structure, signal lead SL is parallel with Electro-static Driven Comb bus B L, electrostatic
Release bus B L is provided with and a plurality of signal lead SL extension one to one, such as structure institute in Fig. 6
Extension BL1, the extension BL2 shown to extension BLn；Every a pair signal lead SL the most corresponding
With in extension:
At least one of bearing of trend of extension is parallel with the bearing of trend of signal lead SL, and extends
A thin film transistor (TFT) 1 it is provided with between portion and signal lead SL；In thin film transistor (TFT) 1, drain electrode 12 with
Extension electrically connects；The length direction of FGS floating gate structure 13 is vertical with signal lead SL bearing of trend, and floating boom
Point discharge structure 2 between structure 13 and Electro-static Driven Comb bus B L is positioned at FGS floating gate structure 13 and extension
Between.
Mode three: the bearing of trend of signal lead SL intersects with the bearing of trend of Electro-static Driven Comb bus B L,
As shown in Fig. 7 structure, the bearing of trend of signal lead SL hangs down with the bearing of trend of Electro-static Driven Comb bus B L
Straight crossing, in the thin film transistor (TFT) 1 between signal lead SL and Electro-static Driven Comb bus B L, FGS floating gate structure
The length direction of 13 is parallel with the bearing of trend of signal lead SL.
Mode four: the bearing of trend of signal lead SL intersects with the bearing of trend of Electro-static Driven Comb bus B L,
As shown in Fig. 8 structure, the bearing of trend of signal lead SL hangs down with the bearing of trend of Electro-static Driven Comb bus B L
Straight crossing, in the thin film transistor (TFT) 1 between signal lead SL and Electro-static Driven Comb bus B L, FGS floating gate structure
The length direction of 13 is parallel with the bearing of trend of Electro-static Driven Comb bus B L.
On the basis of the mode three of aforesaid substrate, one preferred embodiment in, as shown in Fig. 4 structure,
It is provided with two between FGS floating gate structure 13 and signal lead SL that at least one thin film transistor (TFT) 1 has tip is put
Electricity structure 3, along the length direction of FGS floating gate structure 13, in two pairs of point discharge structures 3, a pair point discharge
Structure 3 is arranged at active layer 14 side of thin film transistor (TFT) 1, and point discharge structure 3 is arranged at by another
The opposite side of the active layer 14 of thin film transistor (TFT) 1.
As shown in Fig. 4 structure, owing to substrate is in the FGS floating gate structure 13 of thin film transistor (TFT) 1 and signal lead SL
Between be provided with two pairs of point discharge structures 3, and along the length direction of FGS floating gate structure 13, at thin film transistor (TFT) 1
Active layer 14 be respectively provided on two sides with a pair point discharge structure 3；Therefore, when in signal lead SL because of
When gathering more electrostatic charge and instant high-voltage occur, the electrostatic charge being collected in signal lead SL can be led to
Cross the quick release electrostatic lotus of point discharge structure 3 of active layer 14 both sides laying respectively at thin film transistor (TFT) 1,
Enable electrostatic charge to be uniformly distributed in more rapidly in FGS floating gate structure 13, make FGS floating gate structure 13 quickly have
High potential, and then make the active layer 14 of thin film transistor (TFT) 1 shorten under the effect of FGS floating gate structure 13 to be converted to
The time of conductive state, shorten source electrode 11 and the time of drain electrode 12 conducting making thin film transistor (TFT) 1,
So that the electrostatic charge being collected in signal lead SL flows to electrostatic by the thin film transistor (TFT) 1 of transient switching
Release bus B L carries out Electro-static Driven Comb, is conducive to improving Electro-static Driven Comb speed.
Specifically, as shown in Fig. 4 structure, between FGS floating gate structure 13 and Electro-static Driven Comb bus B L, it is provided with a pair
Point discharge structure 2, along the length direction of FGS floating gate structure 13, FGS floating gate structure 13 and Electro-static Driven Comb bus B L
Between point discharge structure 2 be in the middle part of FGS floating gate structure 13.
As shown in Fig. 4 structure, when because gathering more electrostatic charge, occurring moment in Electro-static Driven Comb bus B L
During high voltage, the electrostatic charge that Electro-static Driven Comb bus B L is gathered can be by being arranged on FGS floating gate structure 13 and electrostatic
The quick release electrostatic lotus of a pair point discharge structure 2 between release bus B L, due to along FGS floating gate structure 13
Length direction, point discharge structure 2 is positioned at the middle part of FGS floating gate structure 13, and therefore electrostatic charge can be from floating
In the middle part of grid structure 13, Quick uniform is distributed to the two ends of FGS floating gate structure 13, makes FGS floating gate structure 13 quickly have
High potential, and then make the active layer 14 of thin film transistor (TFT) 1 shorten under the effect of FGS floating gate structure 13 to be converted to
The time of conductive state, shorten source electrode 11 and the time of drain electrode 12 conducting making thin film transistor (TFT) 1,
So that the electrostatic charge being collected in Electro-static Driven Comb bus B L is flowed to by the thin film transistor (TFT) 1 of transient switching
Carry out Electro-static Driven Comb in signal lead BL, improve Electro-static Driven Comb speed further.Certainly, in order to further
Improve Electro-static Driven Comb speed, it is also possible to arrange between FGS floating gate structure 13 and Electro-static Driven Comb bus B L two to or
Multipair point discharge structure 2.
On the basis of the mode three of aforesaid substrate, specifically, as shown in Fig. 3 structure, signal lead SL
Bearing of trend vertical with the bearing of trend of Electro-static Driven Comb bus B L, FGS floating gate structure 13 and Electro-static Driven Comb bus
It is provided with a pair point discharge structure 2 between BL, between FGS floating gate structure 13 and signal lead SL, is provided with a pair
Point discharge structure 3, along the length direction of FGS floating gate structure 13, FGS floating gate structure 13 and Electro-static Driven Comb bus B L
Between a pair point discharge structure 2 be arranged at active layer 14 side of thin film transistor (TFT) 1, FGS floating gate structure
A pair point discharge structure 3 between 13 and signal lead SL is arranged at the active layer 14 of thin film transistor (TFT) 1
Opposite side.
On the basis of any one substrate that above-described embodiment provides, substrate can be any in following substrate
A kind of:
The first: it is provided with the thin film transistor base plate of data wire and grid line, data wire and/or grid line and forms signal
Cabling SL.
The second: be provided with the touch base plate of touch-control cabling, touch-control cabling forms signal lead SL.
The third: being provided with the color membrane substrates of public electrode wire, public electrode wire forms signal lead SL.
4th kind: be provided with the OLED backboard of power signal line, power signal line forms signal lead SL.
Further, FGS floating gate structure 13 can be arranged with layer with signal lead SL, or, FGS floating gate structure
13 can be arranged with layer with Electro-static Driven Comb bus B L.
Alternatively, in this utility model embodiment, in addition to as the FGS floating gate structure of thin film transistor (TFT),
The pole that thin film transistor (TFT) is used for input signal is referred to as source electrode, and is claimed another pole being used for output signal
For drain electrode.However, it is contemplated that the source electrode of thin film transistor (TFT) and the symmetry of drain electrode, completely can be by
The two exchanges, and does not affect the technical scheme of this utility model embodiment.
It addition, this utility model embodiment additionally provides a kind of display device, it includes any one base above-mentioned
Plate.Display device can be: liquid crystal panel, Electronic Paper, oled panel, mobile phone, panel computer, electricity
Depending on any products with display function such as machine, display, notebook computer, DPF, navigators or
Parts.
Obviously, those skilled in the art this utility model embodiment can be carried out various change and modification and
Without departing from spirit and scope of the present utility model.So, if these amendments of the present utility model and modification belong to
Within the scope of this utility model claim and equivalent technologies thereof, then this utility model is also intended to comprise this
Including a little changes and modification.
Claims (14)
1. a substrate, including signal lead and Electro-static Driven Comb bus, described signal lead and described electrostatic
Being provided with thin film transistor (TFT) between release bus, described thin film transistor (TFT) includes source electrode, drain electrode and active layer；
Described source electrode electrically connects with described signal lead, and described drain electrode electrically connects with described Electro-static Driven Comb bus；
It is characterized in that, described thin film transistor (TFT) also includes the FGS floating gate structure relative with described active layer, and described floating
Be provided with at least one pair of point discharge structure between grid structure and described signal lead, and/or described FGS floating gate structure with
It is provided with at least one pair of point discharge structure between described Electro-static Driven Comb bus.
Substrate the most according to claim 1, it is characterised in that the active layer of described thin film transistor (TFT)
For oxide semiconductor material.
Substrate the most according to claim 1, it is characterised in that described Electro-static Driven Comb bus is provided with
With the extension one to one of signal lead described at least one；Every a pair mutually corresponding signal lead and prolonging
In extending portion:
At least one of bearing of trend of described extension is parallel with the bearing of trend of described signal lead,
And between described extension and described signal lead, it is provided with a described thin film transistor (TFT)；Described thin film transistor (TFT)
In, drain electrode electrically connects with described extension；The length direction of described FGS floating gate structure prolongs with described signal lead
Stretch direction parallel, and the point discharge structure between described FGS floating gate structure and described Electro-static Driven Comb bus is positioned at institute
State between FGS floating gate structure and described extension.
Substrate the most according to claim 1, it is characterised in that described Electro-static Driven Comb bus is provided with
With the extension one to one of signal lead described at least one；Every a pair mutually corresponding signal lead and prolonging
In extending portion:
At least one of bearing of trend of described extension is parallel with the bearing of trend of described signal lead,
And between described extension and described signal lead, it is provided with a described thin film transistor (TFT)；Described thin film transistor (TFT)
In, drain electrode electrically connects with described extension；The length direction of described FGS floating gate structure prolongs with described signal lead
Stretch direction vertical, and the point discharge structure between described FGS floating gate structure and described Electro-static Driven Comb bus is positioned at institute
State between FGS floating gate structure and described extension.
Substrate the most according to claim 1, it is characterised in that the bearing of trend of described signal lead
Intersect with the bearing of trend of described Electro-static Driven Comb bus, between described signal lead and described Electro-static Driven Comb bus
Thin film transistor (TFT) in, the length direction of FGS floating gate structure is parallel with the bearing of trend of described signal lead, or,
The length direction of FGS floating gate structure is parallel with the bearing of trend of described Electro-static Driven Comb bus.
6. according to the substrate described in any one of claim 1-5, it is characterised in that at least one is described thin
It is provided with two to described point discharge structure, edge between FGS floating gate structure and described signal lead that film transistor has
The length direction of described FGS floating gate structure, two in described point discharge structure, and a pair point discharge structure is arranged
In the active layer side of described thin film transistor (TFT), another is arranged at described thin film transistor (TFT) to point discharge structure
The opposite side of active layer.
7. according to the substrate described in any one of claim 1-5, it is characterised in that described FGS floating gate structure with
It is provided with a pair point discharge structure between described Electro-static Driven Comb bus, along the length direction of described FGS floating gate structure,
Point discharge structure between described FGS floating gate structure and described Electro-static Driven Comb bus is in described FGS floating gate structure
Middle part.
8. according to the substrate described in any one of claim 1-5, it is characterised in that described FGS floating gate structure with
A pair point discharge structure, described FGS floating gate structure and described signal lead it is provided with between described Electro-static Driven Comb bus
Between be provided with a pair point discharge structure, along the length direction of described FGS floating gate structure, described FGS floating gate structure and institute
State a pair point discharge structure between Electro-static Driven Comb bus and be arranged at the active layer one of described thin film transistor (TFT)
Side, it is brilliant that a pair point discharge structure between described FGS floating gate structure and described signal lead is arranged at described thin film
The opposite side of the active layer of body pipe.
9. according to the substrate described in any one of claim 1-5, it is characterised in that described substrate is for being provided with
Data wire and the thin film transistor base plate of grid line, described data wire and/or grid line form described signal lead.
10. according to the substrate described in any one of claim 1-5, it is characterised in that described substrate is for being provided with
The touch base plate of touch-control cabling, described touch-control cabling forms described signal lead.
11. according to the substrate described in any one of claim 1-5, it is characterised in that described substrate is for being provided with
The color membrane substrates of public electrode wire, described public electrode wire forms described signal lead.
12. according to the substrate described in any one of claim 1-5, it is characterised in that described substrate is for being provided with
The OLED backboard of power signal line, described power signal line forms described signal lead.
13. according to the substrate described in any one of claim 1-5, it is characterised in that described FGS floating gate structure with
Described signal lead is arranged with layer, or, described FGS floating gate structure is arranged with layer with described Electro-static Driven Comb bus.
14. 1 kinds of display devices, it is characterised in that include the base as described in any one of claim 1-13
Plate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620070534.6U CN205542778U (en) | 2016-01-25 | 2016-01-25 | Base plate and display device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620070534.6U CN205542778U (en) | 2016-01-25 | 2016-01-25 | Base plate and display device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN205542778U true CN205542778U (en) | 2016-08-31 |
Family
ID=56769305
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201620070534.6U Active CN205542778U (en) | 2016-01-25 | 2016-01-25 | Base plate and display device |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105487317A (en) * | 2016-01-25 | 2016-04-13 | 京东方科技集团股份有限公司 | Substrate and display device |
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2016
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105487317A (en) * | 2016-01-25 | 2016-04-13 | 京东方科技集团股份有限公司 | Substrate and display device |
| WO2017128738A1 (en) * | 2016-01-25 | 2017-08-03 | Boe Technology Group Co., Ltd. | Substrate and display device containing the same |
| CN105487317B (en) * | 2016-01-25 | 2019-04-02 | 京东方科技集团股份有限公司 | A kind of substrate and display device |
| US10546851B2 (en) | 2016-01-25 | 2020-01-28 | Boe Technology Group Co., Ltd | Substrate and display device containing the same |
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