CN205443444U - MOCVD "The reaction chamber"'s cleaning device - Google Patents
MOCVD "The reaction chamber"'s cleaning device Download PDFInfo
- Publication number
- CN205443444U CN205443444U CN201620116629.7U CN201620116629U CN205443444U CN 205443444 U CN205443444 U CN 205443444U CN 201620116629 U CN201620116629 U CN 201620116629U CN 205443444 U CN205443444 U CN 205443444U
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- China
- Prior art keywords
- reaction chamber
- cleaning
- carrier
- cleaning plant
- mocvd reaction
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 238000004140 cleaning Methods 0.000 title claims abstract description 100
- 238000006243 chemical reaction Methods 0.000 title claims abstract description 79
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 title claims abstract description 39
- 239000004745 nonwoven fabric Substances 0.000 claims description 7
- 230000003068 static effect Effects 0.000 claims description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract description 6
- 239000001301 oxygen Substances 0.000 abstract description 6
- 229910052760 oxygen Inorganic materials 0.000 abstract description 6
- 230000003749 cleanliness Effects 0.000 abstract description 5
- 238000005265 energy consumption Methods 0.000 abstract description 4
- 238000004519 manufacturing process Methods 0.000 abstract description 4
- 238000010521 absorption reaction Methods 0.000 abstract description 3
- 239000012535 impurity Substances 0.000 abstract description 3
- 239000004065 semiconductor Substances 0.000 abstract description 2
- 238000002360 preparation method Methods 0.000 abstract 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 12
- 229910002804 graphite Inorganic materials 0.000 description 12
- 239000010439 graphite Substances 0.000 description 12
- 238000000034 method Methods 0.000 description 9
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- 239000006227 byproduct Substances 0.000 description 5
- 239000000428 dust Substances 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- 241000883990 Flabellum Species 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- -1 steam Substances 0.000 description 2
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- 230000000740 bleeding effect Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000010926 purge Methods 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 238000004064 recycling Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Landscapes
- Chemical Vapour Deposition (AREA)
Abstract
The utility model provides a MOCVD "The reaction chamber"'s cleaning device belongs to semiconductor device manufacture technical field, the utility model discloses an articulated clearance arm preparation cleaning device on bearing the dish to through the contained angle alpha who sets for clearance arm and horizontal plane, the rotation rate n who reaches cleaning device, make the clearance arm can open in vertical direction under minimum rotational speed, and then to the clearance of "The reaction chamber" inner wall, reduction energy consumption, realized just simultaneously can cleaing away the deposit of piling up in the cavity totally on not unpacing "The reaction chamber"'s basis apart, avoided "The reaction chamber" inside and impurity such as atmosphere contact absorption steam, oxygen. Kept the inside cleanliness factor of "The reaction chamber", improved and maintained the stability of machine performance later at the cavity.
Description
Technical field
This utility model belongs to technical field of manufacturing semiconductors, especially relates to cleaning plant and the method for cleaning of a kind of MOCVD reaction chamber.
Background technology
MOCVD(English full name: MetalOrganicChemicalVapourdeposition, Chinese full name: metal organic chemical vapor deposition) it is a kind of equipment for metal organic chemical vapor deposition process, it is widely used in the epitaxial growth of LED, its main composition partial reaction chamber can produce more by-product after certain vapor deposition reaction, the photoelectric properties of LED can be had a strong impact on, it is necessary to periodically clear up when byproducts build-up to certain thickness or amount.
The method of cleaning by-product is to be taken apart by reaction chamber at present, and utilizes vacuum cleaner by clean for by-product extraction.But expose in an atmosphere because reaction chamber is opened, substantial amounts of steam, oxygen etc. adsorb at chamber inner wall, and the water oxygen being difficult to adsorb these after safeguarding is removed.If the water of reaction chamber inwall absorption, oxygen etc. can not effectively be removed, in growth course water, oxygen molecule will release slowly, the recovery of reaction chamber internal medium can continue long time, can cause the series of problems such as outer epitaxial wafer voltage is high, brightness is low simultaneously.
Summary of the invention
For the problem in existing scale removal process, this utility model provides cleaning plant and the method for cleaning of a kind of MOCVD reaction chamber, it is intended in the case of being not switched on reaction chamber, automatically clear up the by-product of reaction chamber inwall.
This utility model provides the cleaning plant of a kind of MOCVD reaction chamber, at least include: a carrier, a plurality of cleaning arm being uniformly distributed and being articulated with carrier top edge, the described cleaning arm carrier center position that remains static described in Shi Junxiang tilts, and the angle of cleaning arm and horizontal plane is α, 0 ° of ＜ α ＜ 90 °；
Preferably, described cleaning plant clears up MOCVD reaction chamber by rotation mode, and the relation between its rotary speed n, the diameter D of carrier and cleaning arm length L meets: n >=, and。
Preferably, described cleaning arm includes supporting mechanism and is installed on the Wiping mechanism on supporting mechanism surface, and described Wiping mechanism is used for cleaning reaction chamber inwall.
Preferably, gross thickness H of described supporting mechanism and described Wiping mechanism is more than or equal to distance H at described carrier edge to reaction chamber inwall '.
Preferably, the length of described cleaning arm is less than or equal to the vertical height of described MOCVD reaction chamber.
Preferably, there is a groove described carrier lower surface center.
Preferably, the diameter of described carrier is less than the internal diameter of described MOCVD reaction chamber.
Preferably, the one or any a combination of both during described Wiping mechanism is non-woven fabrics, sponge, hairbrush.
Preferably, the number of described cleaning arm is more than or equal to 2.
Preferably, described cleaning plant also includes the cushion block being placed between described cleaning arm and described carrier.
This utility model at least has the advantages that 1) set minimum speed, energy efficient according to the angle of cleaning arm with horizontal plane；2) achieve on the basis of not taking reaction chamber apart and just can the deposit being piled up in chamber be removed clean, it is to avoid reaction chamber is internal adsorbs the impurity such as steam, oxygen with atmosphere；3) maintain the cleanliness factor within reaction chamber, improve the stability of machine performance after cavity maintenance.
Accompanying drawing explanation
Accompanying drawing is used for providing being further appreciated by of the present utility model, and constitutes a part for description, is used for explaining this utility model, is not intended that restriction of the present utility model together with embodiment of the present utility model.Additionally, accompanying drawing data are to describe summary, it is not drawn to scale.
The MOCVD reaction chamber of Fig. 1 this utility model embodiment one and the sectional view of cleaning plant；
The hinge top view of Fig. 2 this utility model embodiment one；
The cleaning plant schematic diagram that the employing graphite plate of Fig. 3 this utility model embodiment one makes；
Cleaning plant cross-sectional operational views in MOCVD that the employing graphite plate of Fig. 4 this utility model embodiment one makes；
Cleaning plant cross-sectional operational views in MOCVD of Fig. 5 this utility model embodiment two；
Accompanying drawing marks: 1: reaction chamber；11: rotating mechanism；12 top covers；2: carrier；2': graphite plate；21: cushion block；22: groove；23: hinge；231: blade face；232: through hole；24: groove；241: groove surfaces；3: cleaning arm；31: Wiping mechanism；32: supporting mechanism；321: blade face；4: exhaust gas processing device.
Detailed description of the invention
Embodiment 1
Referring to accompanying drawing 1, the present embodiment provides the cleaning plant of a kind of MOCVD reaction chamber 1, and it at least includes a carrier 2 and a plurality of cleaning arm 3 being uniformly distributed and being articulated with carrier 2 top edge.
Wherein, carrier 2 is metal dish, ceramic disk or graphite plate, generally circular in shape or regular polygon, for making carrier 2 free in and out reaction chamber 1, the diameter D of carrier 2 is set smaller than the internal diameter of MOCVD reaction chamber 1, carrier 2 lower surface center is disposed and is also set up a groove 22, and cleaning plant is installed on the rotating mechanism 11 in reaction chamber 1 by groove 22.Further, cleaning arm 3 includes supporting mechanism 32 and is installed on the Wiping mechanism 31 on supporting mechanism 32 surface, described Wiping mechanism 31 is used for cleaning reaction chamber 1, and total thickness H of Wiping mechanism 31 and supporting mechanism 32 is more than or equal to distance H at carrier 2 edge to reaction chamber 1 sidewall '；For can sufficiently clean reaction chamber 1 inwall, Wiping mechanism 31 is the one or any a combination of both in non-woven fabrics, sponge, hairbrush.
With continued reference to accompanying drawing 1, when cleaning plant remains static, cleaning arm 3 tilts to carrier 2 center position, and when rotating for ease of cleaning plant, cleaning arm 3 can open in vertical direction under minimum speed, cleaning arm 3 is hinged through the hinge on carrier 2, and horizontal by an angle α, α meets 0 ° of ＜ α ＜ 90 °.Preferably ready-made hinge 23(such as accompanying drawing 2) connect cleaning arm 3 and carrier 2, it is without spring hinge function, can open under the effect of minimum force, and when the angle in two flabellum faces 231 is less than 90 jiaos, it then can close under the effect of own wt, it is achieved MOCVD reaction chamber 1 cleared up under minimum speed by cleaning plant, saves energy consumption, on blade face, 231 surfaces are provided with several through holes 232, and bolt respectively two flabellum faces 231 is connected to carrier 2 top by through hole 232 and supporting mechanism 32 is hindered.A kind of cleaning plant that this utility model provides, its relation started between rotary speed n, carrier 2 diameter D and cleaning arm 3 length L meets: n >=, andThe i.e. minimum toggle speed of cleaning plant is n=, minimum speed n draws by the component in the cleaning perpendicular direction of arm 3 self gravitation is equal with the component of cleaning arm 3 vertical direction equal to centrifugal force, centrifugal force is perpendicular to clear up the component on arm 3 direction and clear up arm 3 self gravitation be perpendicular to clear up the component direction contrast in arm 3 direction, when the component of both direction is identical, rotary speed n of cleaning plant now is cleaning arm 3 and rotates the minimum speed opened, therefore, the component being perpendicular to clear up on arm 3 direction along with the increase centrifugal force of rotating speed n increases, open at vertical direction for cleaning arm 3 and provide power.Additionally, when clear up arm 3 hinged with carrier 2 upper surface time, angle α between cleaning arm 3 and horizontal plane is by being arranged at height and the position adjustments of the cushion block 21 between cleaning arm 3 and carrier 2, and cleaning arm 3 can also regulate otherwise with the angle α of horizontal plane certainly.
With continued reference to accompanying drawing 1, in this utility model, cleaning plant is positioned on the rotating mechanism 11 in MOCVD reaction chamber 1, therefore, bottom carrier 2 and reaction chamber 1, there is certain altitude, for ensureing cleaning arm 3 energy rotary cleaning reaction chamber 1 inwall, the length of cleaning arm 3 is less than or equal to the vertical height of reaction chamber 1, and the diameter of carrier 2 is less than the internal diameter of reaction chamber 1.
In actual production process, the present embodiment as a example by VeecoK465iMOCVD equipment, the summary making of cleaning plant and method of work thereof:
With reference to accompanying drawing 3, first, preferably graphite plate 2 ' makes cleaning plant as carrier 2, especially during epitaxial growth, because surface fracture, attachment such as do not clean up at the circular graphitic dish 2 ' affecting wafer photoelectric properties and scrap, use this type of to scrap graphite plate 2 ' and the cost of manufacture of cleaning plant can be greatly saved as carrier 2.It made as follows, first by graphite plate 2 ' at bottom margin upwards centre of surface direction cut several wedge-shaped impressions 24, groove surfaces 241 is α with the angle of horizontal plane, and cleaning plant 3 is joined in groove 24 by ready-made hinge 23；The most conventional graphite plate 2 ' diameter D is 465mm, thickness is 10mm, graphite plate 2 ' upper surface is 150mm to the distance at MOCVD reaction chamber top, therefore length L of cleaning arm 3 is 150mm, for ensureing that cleaning plant can be freely accessible to reaction chamber 1 during transmitting, that preferably clears up arm 3 is positioned at groove 24 (with reference to accompanying drawing 4), the angle α thus calculating cleaning arm 3 and horizontal plane is 6 °, and then minimum speed n when drawing described cleaning plant rotary work is 583 revs/min, choose minimum speed and start cleaning plant, to save energy consumption.
Likewise it is preferred that graphite plate 2 ' edge is to distance H of reaction chamber 1 inwall ' equal to Wiping mechanism 31 and gross thickness H of supporting mechanism 32.The preferred cleanliness factor of Wiping mechanism 31 and the higher non-woven fabrics of adsorptivity and elastic bigger sponge combination, first install a sponge on supporting mechanism 32, after continue a non-woven fabrics is installed on sponge, while cleaning, prevent the generation of dust raising phenomenon in reaction chamber 1.For ensureing the cleanliness factor cleaning reaction chamber 1 single, the number of cleaning arm 3 is more than or equal to 2, and the present embodiment preferably 4 cleaning arm 3 is uniformly articulated with graphite plate 2 ' surface, certainly also dependent on being actually needed selection 6 or 8 etc..
Then, above-mentioned cleaning plant is transferred on the rotating mechanism 11 in MOCVD reaction chamber 1；Being passed through nitrogen inside reaction chamber by the top cover 12 of reaction chamber 1 simultaneously, keep reaction chamber 1 internal pressure at 700 ~ 800Torr, nitrogen flow is 100 liters/min；Starting rotating mechanism 11, drive described cleaning plant to rotate, setting speed is 583 revs/min, and described cleaning arm 3 in the vertical direction under the influence of centrifugal force opens, and is adjacent to the inwall of described reaction chamber 1, cleans MOCVD reaction chamber 1 sidewall；While drive mechanism 11 rotates, open the exhaust gas processing device 4 of MOCVD device, by the purging of nitrogen and bleeding of exhaust gas processing device 4, prevent the dust raising phenomenon that MOCVD reaction chamber 1 produces in cleaning process.
For ensureing that the deposit in MOCVD reaction chamber 1 is thoroughly removed, can be with repeat the above steps, until being removed by reaction chamber 1 inside deposition thing, certainly, Wiping mechanism 31, supporting mechanism 32, graphite plate 2 ' all can be with disassembly, cleaning, to realize recycling.
Utilize the method, cleaning plant is with the rotation of rotating mechanism 11 and rotary work, and both rotary speeies are identical, therefore staff can calculate the rotating speed of cleaning plant by directly setting the rotating speed of the rotating mechanism 11 of MOCVD device, and then under minimum speed by cleaning arm 3 open clean reaction chamber 1 inwall deposit, reduce energy consumption；Wiping mechanism 31 has certain flexibility and the performance of absorption deposit, farthest prevent the generation of airborne dust, achieve on the basis of not taking reaction chamber 1 apart and just can the deposit being piled up in chamber be removed clean, it is to avoid reaction chamber 1 is internal adsorbs the impurity such as steam, oxygen with atmosphere；And then maintain the cleanliness factor within reaction chamber 1, improve the stability of machine performance after MOCVD reaction chamber 1 is safeguarded.
Embodiment 2
Referring to accompanying drawing 5, the present embodiment is from the difference of embodiment 1: supporting mechanism 32 is different with the length of Wiping mechanism 31 and shape, supporting mechanism 32 be shaped as rectangle, and Wiping mechanism 31 is for realizing reaction chamber 1 sidewall, top cover 12, and the cleaning of bottom, it is arranged at the supporting mechanism 32 position near reaction chamber 1 sidewall, and its upper and lower, and Wiping mechanism 31 preferably selects the combination of hairbrush and non-woven fabrics, i.e. first at load carrier 31 left side wall, certain thickness hairbrush is installed in top and bottom, non-woven fabrics is being installed on hairbrush, realize cleaning arm 3 light weight, and it is close to the requirement of reaction chamber 1 inwall, and then the cleaning to reaction chamber 1 inwall；Except above-mentioned district feature, remaining parameter and method of work are all identical with embodiment one, do not state tired at this.
It should be noted that embodiment of above is only in order to illustrate the technical solution of the utility model, it is not intended to limit；Although this utility model being described in detail with reference to aforementioned embodiments, it will be understood by those within the art that；Technical scheme described in previous embodiment still can be modified by it, or the most some or all of technical characteristic is carried out equivalent, and these amendments or replacement, do not make the essence of appropriate technical solution depart from the scope of each embodiment of this utility model.
Claims (10)
1. the cleaning plant of a MOCVD reaction chamber, at least include: a carrier, a plurality of cleaning arm being uniformly distributed and being articulated with carrier upper edge, the described cleaning arm carrier center position that remains static described in Shi Junxiang tilts, and the angle of cleaning arm and horizontal plane is α, 0 ° of ＜ α ＜ 90 °.
The cleaning plant of a kind of MOCVD reaction chamber the most according to claim 1, it is characterized in that: described cleaning arm clears up MOCVD reaction chamber by rotation mode, the relation between its rotary speed n, the diameter D of carrier and cleaning arm length L meets: n >=, and。
The cleaning plant of a kind of MOCVD reaction chamber the most according to claim 1, it is characterised in that: described cleaning arm includes supporting mechanism and is installed on the Wiping mechanism on described supporting mechanism surface, and described Wiping mechanism is used for cleaning reaction chamber inwall.
The cleaning plant of a kind of MOCVD reaction chamber the most according to claim 3, it is characterised in that: gross thickness H of described supporting mechanism and described Wiping mechanism is more than or equal to distance H at described carrier edge to reaction chamber inwall '.
The cleaning plant of a kind of MOCVD reaction chamber the most according to claim 1, it is characterised in that: the length of described cleaning arm is less than or equal to the vertical height of described MOCVD reaction chamber.
The cleaning plant of a kind of MOCVD reaction chamber the most according to claim 1, it is characterised in that: there is a groove described carrier lower surface center.
The cleaning plant of a kind of MOCVD reaction chamber the most according to claim 1, it is characterised in that: the diameter of described carrier is less than the internal diameter of described MOCVD reaction chamber.
The cleaning plant of a kind of MOCVD reaction chamber the most according to claim 3, it is characterised in that: described Wiping mechanism is the one or any a combination of both in non-woven fabrics, sponge, hairbrush.
The cleaning plant of a kind of MOCVD reaction chamber the most according to claim 1, it is characterised in that: the number of described cleaning arm is more than or equal to 2.
The cleaning plant of a kind of MOCVD reaction chamber the most according to claim 1, it is characterised in that: described cleaning plant also includes the cushion block being placed between described cleaning arm and described carrier.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620116629.7U CN205443444U (en) | 2016-02-05 | 2016-02-05 | MOCVD "The reaction chamber"'s cleaning device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620116629.7U CN205443444U (en) | 2016-02-05 | 2016-02-05 | MOCVD "The reaction chamber"'s cleaning device |
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| Publication Number | Publication Date |
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| CN205443444U true CN205443444U (en) | 2016-08-10 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201620116629.7U Withdrawn - After Issue CN205443444U (en) | 2016-02-05 | 2016-02-05 | MOCVD "The reaction chamber"'s cleaning device |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105648420A (en) * | 2016-02-05 | 2016-06-08 | 安徽三安光电有限公司 | Cleaning device and method for MOCVD reaction cavity |
| CN112309815A (en) * | 2019-07-26 | 2021-02-02 | 山东浪潮华光光电子股份有限公司 | Recovery method for MOCVD system for producing LED epitaxial wafer after maintenance |
| CN113652671A (en) * | 2021-08-16 | 2021-11-16 | 芜湖启迪半导体有限公司 | MOCVD reaction chamber cleaning device and cleaning method thereof |
-
2016
- 2016-02-05 CN CN201620116629.7U patent/CN205443444U/en not_active Withdrawn - After Issue
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105648420A (en) * | 2016-02-05 | 2016-06-08 | 安徽三安光电有限公司 | Cleaning device and method for MOCVD reaction cavity |
| CN105648420B (en) * | 2016-02-05 | 2018-03-16 | 安徽三安光电有限公司 | A kind of cleaning plant and method for cleaning of MOCVD reaction chambers |
| CN112309815A (en) * | 2019-07-26 | 2021-02-02 | 山东浪潮华光光电子股份有限公司 | Recovery method for MOCVD system for producing LED epitaxial wafer after maintenance |
| CN112309815B (en) * | 2019-07-26 | 2023-07-28 | 山东浪潮华光光电子股份有限公司 | Recovery method after maintenance of MOCVD (metal organic chemical vapor deposition) system for producing LED (light-emitting diode) epitaxial wafer |
| CN113652671A (en) * | 2021-08-16 | 2021-11-16 | 芜湖启迪半导体有限公司 | MOCVD reaction chamber cleaning device and cleaning method thereof |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| AV01 | Patent right actively abandoned |
Granted publication date: 20160810 Effective date of abandoning: 20180316 |
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| AV01 | Patent right actively abandoned |