CN205430850U - Igbt散热模组以及具有其的igbt模组 - Google Patents
Igbt散热模组以及具有其的igbt模组 Download PDFInfo
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C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
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Effective date of registration: 20191202 Address after: 518119 1 Yanan Road, Kwai Chung street, Dapeng New District, Shenzhen, Guangdong Patentee after: SHENZHEN BYD MICROELECTRONICS Co.,Ltd. Address before: 516083 Guangdong city of Huizhou province Dayawan xiangshuihe Patentee before: HUIZHOU BYD INDUSTRIAL Co.,Ltd. |
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CP03 | Change of name, title or address | ||
CP03 | Change of name, title or address |
Address after: 518119 1 Yanan Road, Kwai Chung street, Dapeng New District, Shenzhen, Guangdong Patentee after: BYD Semiconductor Co.,Ltd. Address before: 518119 No.1 Yan'an Road, Kuiyong, Kuiyong street, Dapeng New District, Shenzhen City, Guangdong Province Patentee before: SHENZHEN BYD MICROELECTRONICS Co.,Ltd. |
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TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20200914 Address after: 516083 Guangdong city of Huizhou province Dayawan xiangshuihe Patentee after: HUIZHOU BYD INDUSTRIAL Co.,Ltd. Address before: 518119 1 Yanan Road, Kwai Chung street, Dapeng New District, Shenzhen, Guangdong Patentee before: BYD Semiconductor Co.,Ltd. |