CN205420599U - Intelligence integration silicon bulk crystallizer device - Google Patents
Intelligence integration silicon bulk crystallizer device Download PDFInfo
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- CN205420599U CN205420599U CN201520618864.XU CN201520618864U CN205420599U CN 205420599 U CN205420599 U CN 205420599U CN 201520618864 U CN201520618864 U CN 201520618864U CN 205420599 U CN205420599 U CN 205420599U
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Abstract
The utility model discloses an intelligence integration silicon bulk crystallizer device, it is not only respond well, convenient loading and unloading, the same simple structure of crystallizer equipment, convenient operation, after silicon liquid melts, pour the crystallizer into in, transport elevating gear back through the travelling car on, close the stove and rise again, let in protective atmosphere, then carry out the program run crystallization and grow, the crystallization growth is accomplished the postcooling and is come out of the stove, and whole flow easy operation realizes that the crystallization of silicon liquid becomes the silicon bulk. The power 45KVA of this equipment, operation process energy consumption is lower, let in protective atmosphere to the furnace in, the effectual heating component that is protecting reduces the use cost of vulnerable part, equipment accuse temperature ratio is more accurate, controls whole crystallisation process, the same effectual crystallization of accomplishing silicon liquid, product quality stability through the procedure, it is that the vacuum apparatus is difficult for producing big production accidents such as explosion to change equipment portion, and the security performance is high, this equipment cost is cheap, drops into for a short time, sturdy durable.
Description
Technical field
This utility model relates to a kind of photovoltaic industry polycrystalline silicon material crystallizer, especially relates to a kind of intelligent integral silicon ingot mould assembly.
Background technology
A kind of equipment of crystalline growth after photovoltaic industry polycrystalline silicon material melts, owing to the directional solidification process of photovoltaic polycrystalline silicon material needs first to melt silicon material, then crystallographic orientation growth, the growth needs of silicon liquid is carried out in crystallizer container, the crystallographic orientation ingot furnace of most silicon material completes, silicon material carries out fusing and directional solidification in same ingot furnace, this equipment price is expensive, production cycle is longer, melting silicon materials cannot be realized and directional solidification is separately carried out, too high to equipment requirements.But crystallizer equipment solves the most puzzled, the silicon liquid after fusing can be poured different crystallizer equipment into and carry out the directional solidification growth of silicon ingot, flexible operation, and crystallization mode is simple, and product quality is also stable；Equally reach the using effect of ingot furnace, the device structure of ingot furnace is simplified, reduce equipment fixed investment, decrease high heater block.What the heating components and parts of ingot furnace used is all high purity graphite, and heating system controls the power adjustments controller used, and body of heater is rustless steel and structure complexity, bulky；Running power 200KVA even more big, electric energy consumption is the highest.The puzzlement that ingot furnace produces is that structure is complicated, consumable accessory costliness operating cost is high and production capacity is relatively low, it is necessary to improve casting unit, could be cost-effective.
Now, above-mentioned ingot furnace operating type having the disadvantage in that one, ingot furnace device structure is complicated, involves great expense, and operating cost is higher；Its two, ingot furnace equipment capacity is relatively low and cannot separately carry out melting and orienting；Operation easier is big, and there is silicon liquid and spill, the puzzlement of waste；Its three, ingot furnace equipment operation easier is relatively big, and vacuum chamber safety is the highest, easily produces production accident；Therefore, needing a kind of special novel crystallization device equipment badly, meet simple to operate, security performance promotes, it is achieved melts and crystallize and carries out in distinct device, raising production efficiency.
Utility model content
The purpose of this utility model is to provide a kind of in overcoming photovoltaic industry silicon ingot crystallization process operation easier big, operating cost is high, cannot carry out melting and crystallizing in distinct device, production capacity is relatively low, production efficiency is poor, solve series of problems like this, it is provided that one is possible not only to realize simple to operate, and operating cost is low；And production efficiency is high；Solve existing casting unit production cycle length and the low problem of production capacity, from the perspective of energy-saving safe, also there is device security good, a kind of intelligent integral silicon ingot mould assembly of the advantage that energy consumption is low.
The purpose of this utility model is achieved in that a kind of intelligent integral silicon ingot mould assembly; there is upper furnace body, lower furnace body; described upper furnace body is connected with lower furnace body by furnace body support; being positioned at described upper furnace body and be provided with crystallizer, described lower furnace body includes that lowering or hoisting gear, lower furnace body move dolly, heating metasystem, protective atmosphere device, cooling chamber and temperature regulating device composition.
Above-mentioned a kind of intelligent integral silicon ingot mould assembly, described crystallizer is made up of silica crucible, graphite protective plate and DS block, and silica crucible is the container accommodating silicon liquid, and sidewall of crucible prevents the pollution of silicon liquid after being coated with map brushing layer；Graphite protective plate is to prevent silicon liquid from causing crucible deform or rupture crucible effect the container pressure of sidewall of crucible；DS block is high purity graphite block, and crucible bottom is carried out good heat conduction, makes silicon liquid oriented growth in crystallization process.
Above-mentioned a kind of intelligent integral silicon ingot mould assembly, described furnace body support is made up of four 14# High-strength channel steel.
Above-mentioned a kind of intelligent integral silicon ingot mould assembly, described upper furnace body uses the steel plate of 8mm and 10# to thicken channel-section steel and be welded；Compound heat preservation layer, furnace lining, resistance to Pyroxylin and refractory brick composition is used in whole burner hearth.
Above-mentioned a kind of intelligent integral silicon ingot mould assembly, described lower furnace body has material platform, refractory slab, alignment pin and cooling chamber, is provided with alignment pin bottom described material platform.
Above-mentioned a kind of intelligent integral silicon ingot mould assembly, described heating metasystem comprises Si-Mo rod, heating transformer, temperature program instrument and controls silicon composition.
Above-mentioned a kind of intelligent integral silicon ingot mould assembly, described protective atmosphere device consists of turnover air pipe and earthenware duct.
Advantage of the present utility model: a kind of intelligent integral silicon ingot mould assembly of the present utility model, the most respond well, convenient handling；Crystallizer equipment same structure is simple, easy to operate；After silicon liquid melts, pour in crystallizer, transport back on lowering or hoisting gear by mobile dolly, close stove and rise again, be passed through protective atmosphere, then carry out program and run crystalline growth；Crystalline growth cools down after completing and comes out of the stove, and whole flow operations is simple, it is achieved silicon liquid crystallizes into silicon ingot.The power 45KVA of this equipment, running energy consumption is relatively low；It is passed through protective atmosphere in burner hearth, is effectively protected heating element, reduces the use cost of consumable accessory；Equipment temperature control is more accurate, controls whole crystallization process, the equally valid crystallization completing silicon liquid, constant product quality by program；Changing equipment portion is that vacuum equipment is not likely to produce the big production accidents such as blast, and security performance is high；This equipment manufacturing cost is cheap, puts into little, sturdy durable.
Accompanying drawing explanation
In order to make content of the present utility model be easier to be clearly understood, below according to specific embodiment and combine accompanying drawing, this utility model is described in further detail, wherein
Fig. 1 is main TV structure schematic diagram of the present utility model；
Fig. 2 is left view structural representation of the present utility model；
Reference: 1, upper furnace body, 2, lower furnace body, 3, furnace body support, 4, crystallizer, 5, lowering or hoisting gear; 6, lower furnace body moves dolly, and 7, heating metasystem, 8, protective atmosphere device, 9, cooling chamber, 10, temperature regulating device; 11, material platform, 12, refractory slab, 13, alignment pin, 15, Si-Mo rod.
Detailed description of the invention:
As shown in Fig. 1 to Fig. 2; a kind of intelligent integral silicon ingot mould assembly; there is upper furnace body 1, lower furnace body 2; described upper furnace body 1 is connected with lower furnace body 2 by furnace body support 3; being positioned at described upper furnace body 1 and be provided with crystallizer 4, described lower furnace body 2 includes that lowering or hoisting gear 5, lower furnace body move dolly 6, heating metasystem 7, protective atmosphere device 8, cooling chamber 9 and temperature regulating device 10 and form.Described crystallizer 4 is made up of silica crucible, graphite protective plate and DS block, and silica crucible is the container accommodating silicon liquid, and sidewall of crucible prevents the pollution of silicon liquid after being coated with map brushing layer；Graphite protective plate is to prevent silicon liquid from causing crucible deform or rupture crucible effect the container pressure of sidewall of crucible；DS block is high purity graphite block, and crucible bottom is carried out good heat conduction, makes silicon liquid oriented growth in crystallization process.Described furnace body support 3 is 4 14# High-strength channel steel, is welded between base of furnace body and upper furnace body, and furnace body support primarily serves the effect supporting upper furnace body.Described upper furnace body 1 is used the steel plate of 8mm and 10# to thicken channel-section steel and be welded by strengthening standing part；Compound heat preservation layer, furnace lining, resistance to Pyroxylin and refractory brick composition is used in whole burner hearth.Upper furnace body is mainly incubated by their effect, reduces the loss of heat.Described lower furnace body 2, this part is by expecting that platform, refractory slab, alignment pin and cooling chamber etc. form.Its effect mainly carries crystallizer.Described lowering or hoisting gear 5 is divided into 30mm carrying steel plate, mechanical shear knife and fork and lifting oil and lift control system composition, and its effect is the effect of lifting lower furnace body, is controlled the opening and closing of upper lower furnace body by lifting.Described lower furnace body moves dolly 6, is mainly made up of reductor and driving-chain, facilitates lower furnace body to move.Described heating metasystem 7 comprises Si-Mo rod 15, heating transformer, temperature program instrument and controls silicon composition, controls program temperature accurately, makes silicon liquid effectively carry out crystalline growth.Described protective atmosphere device 8 consists of turnover air pipe and earthenware duct, is passed through protective atmosphere and prevents from heating oxidation and the damage effect of Si-Mo rod, also acts as uniform heat-field temperature action.Described cooling chamber 9, during silicon liquid is oriented solidification, is passed through control cooling gas in cooling chamber, carries out the cooling to crystallizer, silicon liquid thus reach the process of crystalline growth.Described temperature regulating device 10, forms including thermocouple, recording instrument without paper, temperature program instrument and power controller etc., and these devices are all the effect playing accurate temperature control, it is ensured that silicon liquid crystallization process is controlled.
Particular embodiments described above; the purpose of this utility model, technical scheme and beneficial effect are further described; it is it should be understood that; the foregoing is only specific embodiment of the utility model; it is not limited to this utility model; all within spirit of the present utility model and principle, any modification, equivalent substitution and improvement etc. done, within should be included in protection domain of the present utility model.
Claims (1)
1. an intelligent integral silicon ingot mould assembly, it is characterized in that: there is upper furnace body (1), lower furnace body (2), described upper furnace body (1) is connected with lower furnace body (2) by furnace body support (3), it is positioned at described upper furnace body (1) and is provided with crystallizer (4), described lower furnace body (2) includes lowering or hoisting gear (5), lower furnace body moves dolly (6), heating metasystem (7), protective atmosphere device (8), cooling chamber (9) and temperature regulating device (10) composition, described crystallizer (4) is by silica crucible, graphite protective plate and DS block composition, silica crucible is the container accommodating silicon liquid, described furnace body support (3) is made up of four 14# High-strength channel steel, described upper furnace body (1) uses the steel plate of 8mm and 10# to thicken channel-section steel and be welded；Compound heat preservation layer, furnace lining, resistance to Pyroxylin and refractory brick composition is used in whole burner hearth; described lower furnace body (2) has material platform (11), refractory slab (12), alignment pin (13); described material platform (11) bottom is provided with alignment pin (13); described heating metasystem (7) comprises Si-Mo rod (15), heating transformer, temperature program instrument and controls silicon composition, and described protective atmosphere device (8) consists of turnover air pipe and earthenware duct.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520618864.XU CN205420599U (en) | 2015-08-18 | 2015-08-18 | Intelligence integration silicon bulk crystallizer device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520618864.XU CN205420599U (en) | 2015-08-18 | 2015-08-18 | Intelligence integration silicon bulk crystallizer device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN205420599U true CN205420599U (en) | 2016-08-03 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201520618864.XU Expired - Fee Related CN205420599U (en) | 2015-08-18 | 2015-08-18 | Intelligence integration silicon bulk crystallizer device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN205420599U (en) |
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2015
- 2015-08-18 CN CN201520618864.XU patent/CN205420599U/en not_active Expired - Fee Related
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Legal Events
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C56 | Change in the name or address of the patentee | ||
| CP01 | Change in the name or title of a patent holder |
Address after: 213000 Changzhou Province, Jintan City, Yao Tang Town, No. 100 crystal Road, No. 99 Patentee after: Changzhou Sheng continued Amperex Technology Limited Address before: 213000 Changzhou Province, Jintan City, Yao Tang Town, No. 100 crystal Road, No. 99 Patentee before: Changzhou Xu Sheng silicon materials company limited |
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| TR01 | Transfer of patent right |
Effective date of registration: 20170309 Address after: Huang Wan Zhen Xian Xia Road Haining City, Jiaxing City, Zhejiang Province, No. 122 factory vistra 314400 Patentee after: Haining Sheng continued Amperex Technology Limited Address before: 213000 Changzhou Province, Jintan City, Yao Tang Town, No. 100 crystal Road, No. 99 Patentee before: Changzhou Sheng continued Amperex Technology Limited |
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| TR01 | Transfer of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20160803 Termination date: 20200818 |
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| CF01 | Termination of patent right due to non-payment of annual fee |