CN205395453U - 平整薄膜层喷孔结构及喷墨打印机 - Google Patents
平整薄膜层喷孔结构及喷墨打印机 Download PDFInfo
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- CN205395453U CN205395453U CN201620161973.8U CN201620161973U CN205395453U CN 205395453 U CN205395453 U CN 205395453U CN 201620161973 U CN201620161973 U CN 201620161973U CN 205395453 U CN205395453 U CN 205395453U
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- 239000010410 layer Substances 0.000 claims abstract description 59
- 239000011368 organic material Substances 0.000 claims abstract description 8
- 239000011229 interlayer Substances 0.000 claims abstract description 7
- 239000007921 spray Substances 0.000 claims description 27
- 239000000758 substrate Substances 0.000 claims description 17
- 239000000463 material Substances 0.000 claims description 9
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 claims description 3
- 229920002521 macromolecule Polymers 0.000 claims description 3
- 239000011147 inorganic material Substances 0.000 claims description 2
- 229910010272 inorganic material Inorganic materials 0.000 claims description 2
- 238000009825 accumulation Methods 0.000 abstract description 5
- 239000003344 environmental pollutant Substances 0.000 abstract description 5
- 231100000719 pollutant Toxicity 0.000 abstract description 5
- 238000004519 manufacturing process Methods 0.000 abstract description 3
- 239000010408 film Substances 0.000 description 15
- 239000004642 Polyimide Substances 0.000 description 8
- 229920001721 polyimide Polymers 0.000 description 8
- 238000000034 method Methods 0.000 description 6
- 239000010409 thin film Substances 0.000 description 4
- 238000009991 scouring Methods 0.000 description 3
- 230000000903 blocking effect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
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- Particle Formation And Scattering Control In Inkjet Printers (AREA)
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Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN201620161973.8U CN205395453U (zh) | 2016-03-03 | 2016-03-03 | 平整薄膜层喷孔结构及喷墨打印机 |
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CN201620161973.8U CN205395453U (zh) | 2016-03-03 | 2016-03-03 | 平整薄膜层喷孔结构及喷墨打印机 |
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CN205395453U true CN205395453U (zh) | 2016-07-27 |
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CN201620161973.8U Active CN205395453U (zh) | 2016-03-03 | 2016-03-03 | 平整薄膜层喷孔结构及喷墨打印机 |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105667090A (zh) * | 2016-03-03 | 2016-06-15 | 中国科学院苏州纳米技术与纳米仿生研究所 | 平整薄膜层喷孔结构及喷墨打印机 |
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2016
- 2016-03-03 CN CN201620161973.8U patent/CN205395453U/zh active Active
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105667090A (zh) * | 2016-03-03 | 2016-06-15 | 中国科学院苏州纳米技术与纳米仿生研究所 | 平整薄膜层喷孔结构及喷墨打印机 |
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Legal Events
Date | Code | Title | Description |
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C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
CP01 | Change in the name or title of a patent holder |
Address after: 215000, Suzhou Industrial Park, Jiangsu, if waterway 398 Co-patentee after: Shanghai Riefa Digital Technology Co.,Ltd. Patentee after: SUZHOU INSTITUTE OF NANO-TECH AND NANO-BIONICS (SINANO), CHINESE ACADEMY OF SCIENCES Address before: 215000, Suzhou Industrial Park, Jiangsu, if waterway 398 Co-patentee before: SUZHOU YUEFA PRINTING TECHNOLOGY Co.,Ltd. Patentee before: SUZHOU INSTITUTE OF NANO-TECH AND NANO-BIONICS (SINANO), CHINESE ACADEMY OF SCIENCES |
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CP01 | Change in the name or title of a patent holder | ||
TR01 | Transfer of patent right |
Effective date of registration: 20200225 Address after: 201703 No. 1106, floor 11, building a, haoche Hui Plaza, No. 1-72, Lane 2855, Huqingping Road, Zhaoxiang Town, Qingpu District, Shanghai Patentee after: Shanghai Riefa Digital Technology Co.,Ltd. Address before: 215000, Suzhou Industrial Park, Jiangsu, if waterway 398 Co-patentee before: Shanghai Riefa Digital Technology Co.,Ltd. Patentee before: SUZHOU INSTITUTE OF NANO-TECH AND NANO-BIONICS (SINANO), CHINESE ACADEMY OF SCIENCES |
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TR01 | Transfer of patent right | ||
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Address after: 310000, 1st Floor, Building 18, No. 260, 6th Street, Baiyang Street, Qiantang District, Hangzhou City, Zhejiang Province Patentee after: Hangzhou Ruierfa Technology Co.,Ltd. Country or region after: China Address before: No. 1106, 11 / F, block a, luxury car Plaza, No. 1-72, Lane 2855, Huqingping Road, Zhaoxiang Town, Qingpu District, Shanghai, 201703 Patentee before: Shanghai Riefa Digital Technology Co.,Ltd. Country or region before: China |
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CP03 | Change of name, title or address |