CN205342779U - Wafer vacuum adsorption template - Google Patents

Wafer vacuum adsorption template Download PDF

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Publication number
CN205342779U
CN205342779U CN201620059674.3U CN201620059674U CN205342779U CN 205342779 U CN205342779 U CN 205342779U CN 201620059674 U CN201620059674 U CN 201620059674U CN 205342779 U CN205342779 U CN 205342779U
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wafer
absorption
diaphragm
template
fixing
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CN201620059674.3U
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夏秋良
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New Meguiar (Suzhou) semiconductor technology Co.,Ltd.
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Suzhou Nanosecond Science And Technology Co Ltd Of New Micron Technology
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  • Mechanical Treatment Of Semiconductor (AREA)

Abstract

The utility model relates to a wafer fixing device, especially a wafer vacuum adsorption template belong to wafer polishing 's technical field. According to the utility model provides a technical scheme, wafer vacuum adsorption template has the template casing on edge protection edge and is located including the outer lane absorption liner in the template casing, still including being used for fixed wafer and personally experiencing sth. Part of the body with the wafer of template casing adaptation is fixed, the fixed physical stamina of wafer with adsorb liner vacuum adsorption and be connected, and after the fixed body of wafer and absorption liner vacuum adsorption be connected, with the wafer of the fixed body coupling of wafer is located the protective range on edge protection edge. The utility model discloses compact structure, it is compatible mutually with current technology, can realize the fixed of multiple wafer, shorten processing cycle, reduce the processing cost, accommodation is wide, safe and reliable.

Description

Wafer vacuum absorption template
Technical field
This utility model relates to a kind of wafer clamping apparatus, especially a kind of wafer vacuum absorption template, belongs to the technical field of wafer polishing.
Background technology
Chemically mechanical polishing (CMP) technology is one of key technology of wafer surface processing, is used widely in the processing of surface polishing of large scale bare crystalline sheet (such as ultra-thin silicon single-chip used for solar batteries), integrated circuit ultra-thin silicon single-chip, LED sapphire substrate wafer etc..
Polishing can improve the roughness of wafer surface, reduces the TTV of wafer, realizes the flatness of superelevation in wafer surface, can also improve its utilization rate to light for some optics wafers.Such as, in the manufacture process of integrated circuit, Silicon Wafer substrate often constructing thousands of construction unit, these construction units form the device of functional circuitry further by multiple layer metal interconnection.In multiple layer metal interconnection architecture, filled media layer between plain conductor, development along with integrated circuit technique, metal live width is more and more less, the wiring number of plies gets more and more, now utilize CMP that the dielectric layer of wafer surface carries out planarization to process and can aid in the making of multilayer line, and can prevent from being coated in dielectric layer the distortion caused on not plane surface.The back of the body polishing technology of ultra-thin silicon single-chip used for solar batteries then can be substantially improved the optics benefit of solar silicon wafers, strengthen silicon chip back surface passivation effect, promote the photoelectric transformation efficiency of solaode, and mainstream technology superposition that can be relevant to heliotechnics, compatible good, solar cell properties can be improved further, advance the development of high efficiency solar cell industrialization.At other field, such as fields such as LED, liquid crystal panels, CMP is then widely used in Sapphire Substrate, the processing of liquid-crystalline glasses panel etc..
The process that CMP process is a mechanism and chemical action balances each other.As, in the polishing process of silicon wafer, first secured the wafer on rubbing head, under the pressure of rubbing head, the rotation of the rotation of wafer, polishing disk cause the friction of wafer and polishing pad.Now chemical action is polishing fluid and the wafer surface contact generation corrosion reaction of alkalescence, and wafer surface by alkali liquid corrosion, can rub and then removed by this corrosion layer, by circulating the two mechanism, it is possible to realize the polishing of wafer.At present wafer being fixed on the method on rubbing head and mainly have paraffin mounting method, water surface tension absorption method (is also template), porous ceramics formula vac sorb method, Electrostatic Absorption method etc..
In the middle of actual production, more be first two, in view of paraffin mounting method costly and the process-cycle longer, therefore template is increasingly taken seriously.But template has one disadvantage in that, for instance 12 cun of vac sorb templates of general customization can only be used as the polishing of 12 cun of wafers, and the THICKNESS CONTROL of wafer requires strict.If processing the wafer of other sizes or other shapes, then again ordering and make vac sorb template, not only costly, the time cycle that template prepares is also long, greatly limit the development of polishing business.
Summary of the invention
The purpose of this utility model is to overcome the deficiencies in the prior art, it is provided that a kind of wafer vacuum absorption template, its compact conformation, mutually compatible with existing technique, the fixing of multiple wafer can be realized, shorten the process-cycle, reduction processing cost, wide accommodation, safe and reliable.
According to the technical scheme that this utility model provides, described wafer vacuum absorption template, including outer ring, there is the template housing at protection edge and be positioned at the adsorbent pad of described template housing;Also include for fixed wafer and with the wafer fixed body of template casing adaptor; the fixing physical ability of described wafer is connected with adsorbent pad vac sorb; and after wafer fixed body is connected with adsorbent pad vac sorb, the wafer being connected with described wafer fixed body is positioned at the protection domain at protection edge.
Described wafer fixed body includes connecting absorption diaphragm and being positioned at the described diaphragm adhesion layer connecting and having capacity of decomposition on absorption diaphragm, and wafer can fixing with diaphragm adhesion layer be connected, and connects absorption diaphragm energy vac sorb in adsorbent pad.
The described thickness connecting absorption diaphragm is 10 μm ~ 5mm, and the thickness of diaphragm adhesion layer is 10 μm ~ 300 μm;The capacity of decomposition of described diaphragm adhesion layer includes photodissociation or pyrolysis.
Described wafer fixed body includes adsorbing fixing diaphragm, arranges some permission wafers and sets and the wafer suitable with described wafer absorption fixing hole, and the fixing diaphragm of absorption can be connected with adsorbent pad vac sorb in the fixing diaphragm of described absorption.
Described wafer absorption fixing hole is square or circular, and the thickness of the fixing diaphragm of absorption is 10 μm ~ 5mm, and the thickness of the fixing diaphragm of described absorption is not more than the thickness of wafer.
Described wafer fixed body also includes connecting location diaphragm and being connected, with described, the absorption stator that location diaphragm is fixing, arranging preposition and suitable with the described wafer wafer of some permission wafers in the diaphragm of described connection location and be connected hole, location, described absorption stator energy vac sorb is in adsorbent pad.
Described wafer connects hole, location and is square or circular, the thickness connecting location diaphragm is 100 μm ~ 1mm, described absorption stator include for wafer and be connected the absorption adhesion layer that location diaphragm is fixing, described absorption adhesion layer and the absorption connection sheet for being connected with adsorbent pad vac sorb.
Advantage of the present utility model: be connected with adsorbent pad by wafer fixed body by polished wafer, wafer fixed body is suitable with template housing, it is possible to effectively reduce the slip in wafer polishing process;The wafer being met arbitrary dimension and shape by the fixing physical ability of wafer connects fixed demand, and after wafer polishing, energy sharp separation, compact conformation, mutually compatible with existing technique, shorten the process-cycle, reduction processing cost, wide accommodation, safe and reliable.
Accompanying drawing explanation
Fig. 1 is the existing schematic diagram that wafer is polished.
Fig. 2 is the schematic diagram of existing wafer vacuum absorption template.
Fig. 3 is the first embodiment schematic diagram of this utility model wafer fixed body.
Fig. 4 is the schematic diagram that this utility model wafer is fixing with diaphragm adhesion layer.
Fig. 5 is that this utility model wafer is placed in the schematic diagram in template housing by wafer fixed body.
Fig. 6 is the schematic diagram that this utility model utilizes photodissociation to be separated with diaphragm adhesion layer by wafer.
Fig. 7 is the second embodiment schematic diagram of this utility model wafer fixed body.
Fig. 8 is that the one that this utility model wafer is placed in the fixing diaphragm of absorption implements schematic diagram.
Fig. 9 is that the another kind that this utility model wafer is placed in the fixing diaphragm of absorption implements schematic diagram.
Figure 10 is thickness and the wafer thickness of this utility model fixing diaphragm of absorption schematic diagram time identical.
Figure 11 is the thickness of this utility model absorption fixing diaphragm schematic diagram when being slightly less than wafer thickness.
Figure 12 be the thickness of this utility model fixing diaphragm of absorption much smaller than wafer thickness time schematic diagram.
Figure 13 is the third embodiment schematic diagram of this utility model wafer fixed body.
Figure 14 is the schematic diagram that wafer is placed in template housing by the wafer fixed body utilizing Figure 13.
Description of reference numerals: 1-polishes deep bid, 2-polishing pad, 3-clamping device, 4-wafer, 5-template housing, 6-protection edge, 7-adsorbent pad, 8-connection absorption diaphragm, 9-diaphragm adhesion layer, 10-illumination, the fixing diaphragm of 11-absorption, 12-connection positions diaphragm and 13-adsorbs stator.
Detailed description of the invention
Below in conjunction with concrete drawings and Examples, the utility model is described in further detail.
As shown in Figure 1, for wafer 4 being carried out the schematic diagram of single-sided polishing, clamping device 3 fixes wafer 4 by absorption method or method of pasting, with certain pressure, wafer 4 is pressed on polishing pad 2, polishing deep bid 1 rotates simultaneously, now the relative polishing pad 2 of wafer 4 will form the state revolved round the sun in the center around center wafer rotation with around polishing pad 2, sprays polishing fluid simultaneously, and wafer 4 surface will be polished;
As shown in Figure 2; vac sorb template for fixed wafer 4 general at present; described vac sorb template includes template housing 5; there is the edge that a circle protrudes at the edge of described template housing 5; namely the edge of template housing 5 forms protection edge 6; adsorbent pad 7 is had inside protection shell 5; during use, wafer 4 is placed in below adsorbent pad 7; and utilize the mode of vac sorb to be adsorbed with adsorbent pad 7 phase by wafer 4; make it will not slide to surrounding by protecting edge 6 to block wafer 4, reduce the risk of fragment.Owing to wafer 4 can slide by relative adsorption liner 7, therefore, existing vac sorb template is difficult to meet the polishing requirement of different chips 4.
In order to be able to realize the fixing of multiple wafer 4, shortening the process-cycle, reduce processing cost, this utility model includes outer ring to be had the template housing 5 at protection edge 6 and is positioned at the adsorbent pad 7 of described template housing 5;Also include for fixed wafer 4 and with the wafer fixed body of template housing 5 adaptation; the fixing physical ability of described wafer is connected with adsorbent pad 7 vac sorb; and after wafer fixed body is connected with adsorbent pad 7 vac sorb, the wafer 4 being connected with described wafer fixed body is positioned at the protection domain at protection edge 6.
Specifically, wafer 4 can keep stationary state with described wafer fixed body after being connected with wafer fixed body, wafer fixed body is suitable with template housing 5 refers to that the fixing physical ability of wafer is placed in template housing 5 and the size of described wafer fixed body can be consistent with adsorbent pad 7 size or be slightly less than the size of adsorbent pad 7, thus after wafer fixed body is connected with adsorbent pad 7 absorption, the slip between wafer fixed body and adsorbent pad 7 can be reduced, the wafer 4 making arbitrary dimension all can realize mating of the absorption template with template housing 5 and adsorbent pad 7 composition by wafer fixed body after being connected, utilize protection edge 6 can realize the protection to wafer 4 polishing process, it is thus possible to the polishing process of adaptive multiple wafer 4, without the vac sorb template that custom-made is consistent with wafer 4, shorten the process-cycle, reduce production cost.
As it is shown on figure 3, described wafer fixed body includes connecting absorption diaphragm 8 and being positioned at the diaphragm adhesion layer 9 on described connection absorption diaphragm 8 with capacity of decomposition, wafer 4 can fixing with diaphragm adhesion layer 9 be connected, and connects absorption diaphragm 8 energy vac sorb in adsorbent pad 7.
The described thickness connecting absorption diaphragm 8 is 10 μm ~ 5mm, and the thickness of diaphragm adhesion layer 9 is 10 μm ~ 300 μm;The capacity of decomposition of described diaphragm adhesion layer 9 includes photodissociation or pyrolysis.
In this utility model embodiment, connect absorption diaphragm 8 and can be divided into soft diaphragm or hard diaphragm, when connecting absorption diaphragm 8 and being soft diaphragm, the organic membrane of the Organic substance compositions such as connecting absorption diaphragm 8 can be polyethylene, politef;When connecting absorption diaphragm 8 and being hard diaphragm, the film of the material compositions such as connecting absorption diaphragm 8 can be silicon chip, glass, toughened plastic.Connecting absorption diaphragm 8 and also can divide planar diaphragm or latticed diaphragm, wherein, latticed diaphragm can be hollow out, it is also possible to be a facial plane, the latticed form of one side.Diaphragm adhesion layer 9 is organic gel, and diaphragm adhesion layer 9 has photodissociation or pyrolysis.When connecting absorption diaphragm 8 and being latticed diaphragm, diaphragm adhesion layer 9 is positioned at connection absorption diaphragm 8 and has latticed surface.
As shown in Figure 4, during use, wafer 4 is fixed polished one side, cover the another side of wafer 4 with the diaphragm adhesion layer 9 connected on absorption diaphragm 8, during operation, avoid bubble to produce;Or connection is adsorbed diaphragm 8 fix, wafer 4 is fixed on diaphragm adhesion layer 9 by the mode tiled or be bonded.
During polishing, diaphragm 8 is adsorbed in connection and is adsorbed in adsorbent pad 7, utilize protection edge 6 to protect connecting absorption diaphragm 8, diaphragm adhesion layer 9 and wafer 4, it is prevented that connect absorption diaphragm 8 and skid off outside template housing 5 in polishing process, as shown in Figure 5;After polishing terminates, wafer 4 and diaphragm adhesion layer 9 are carried out solves viscosity and process, as shown in Figure 6, such as illumination 10(such as ultraviolet light) to irradiate, heating etc. processes, it is possible to quickly take off wafer 4, it is achieved wafer 4 and separating of connecting absorption diaphragm 8 and template housing 5.
As shown in Figure 7, Figure 8 and Figure 9, described wafer fixed body includes adsorbing fixing diaphragm 11, arrange some permission wafers 4 in the fixing diaphragm 11 of described absorption to set and the wafer suitable with described wafer 4 absorption fixing hole, and the fixing diaphragm 11 of absorption can be connected with adsorbent pad 7 vac sorb.
Described wafer absorption fixing hole is square or circular, and the thickness of the fixing diaphragm 11 of absorption is 10 μm ~ 5mm, and the thickness of the fixing diaphragm 11 of described absorption is not more than the thickness of wafer 4.
In this utility model embodiment, wafer fixed body can also adopt the form of the fixing diaphragm 11 of absorption, and the fixing diaphragm 11 of absorption can be soft diaphragm or hard diaphragm;When the fixing diaphragm 11 of absorption is soft diaphragm, the organic membrane of the Organic substance compositions such as the fixing diaphragm 11 of absorption can be polyethylene, politef;When the fixing diaphragm 11 of absorption is hard diaphragm, the film of the material compositions such as the fixing diaphragm 11 of absorption can be silicon chip, glass, toughened plastic.Additionally, the fixing diaphragm 11 of absorption is further divided into planar diaphragm or latticed diaphragm, when the fixing diaphragm 11 of absorption is latticed diaphragm, the fixing diaphragm 11 of absorption can be hollow out, it is also possible to be a facial plane, a surface grids.Wafer absorption fixing hole through absorption can fix diaphragm 11, can also be caved inward formation from a surface of the fixing diaphragm 11 of absorption, specifically can select as required, as long as disclosure satisfy that wafer 4 keeps fixing with the described absorption diaphragm 11 that is connected after setting.
Wafer absorption fixing hole is square or circular, size and the shape of wafer absorption fixing hole be identical or big 10 μm ~ 1mm with wafer 4 to be processed, groove can be circular can also be square etc., during operation, first fixing for absorption diaphragm 11 is inserted in template housing 5 and adsorbed with adsorbent pad 7 and be connected, then wafer 4 is embedded in wafer absorption fixing hole.Fig. 8 is the situation utilizing the wafer fixing square wafer 4 of absorption fixing hole, and Fig. 9 is the situation utilizing the wafer fixing Circular wafer 4 of absorption fixing hole.
Usually, the thickness of the fixing diaphragm 11 of absorption is not more than the thickness of wafer 4, as shown in Figure 10, Figure 11 and Figure 12.The fixing diaphragm 11 of absorption directly adsorbs mutually with adsorbent pad 7; the fixing diaphragm 11 of absorption is positioned at template housing 5; it is positioned at the protection domain at protection edge 6; avoiding, when polishing, skidding off outside template housing 5, the size of the fixing diaphragm 11 of absorption is suitable with adsorbent pad 7; when wafer 4 is polished; can effectively reduce the fixing relative sliding between diaphragm 11 and adsorbent pad 7 of absorption, by adsorbing coordinating between fixing diaphragm 11 and adsorbent pad 7, it is possible to effectively realize the needs of multiple wafer 4 polishing.
As shown in Figure 13, Figure 14, described wafer fixed body also includes connecting location diaphragm 12 and being connected, with described, the absorption stator 13 that location diaphragm 12 is fixing, arranging preposition and suitable with described wafer 4 wafer of some permission wafers 4 in the diaphragm 12 of described connection location and be connected hole, location, described absorption stator 13 energy vac sorb is in adsorbent pad 7.
Described wafer connects hole, location and is square or circular, the thickness connecting location diaphragm 12 is 100 μm ~ 1mm, described absorption stator 13 include for wafer 4 and be connected the absorption adhesion layer that location diaphragm 12 is fixing, described absorption adhesion layer and the absorption connection sheet for being connected with adsorbent pad 7 vac sorb.
In this utility model embodiment, wafer fixed body can also adopt the fit form connecting location diaphragm 12 and absorption stator 13, connect and there is in the diaphragm 12 of location hole, wafer connection location, connect being embodied as structure and can adopting the form of the fixing diaphragm 11 of absorption of location diaphragm 12, specifically it is referred to adsorb the explanation of fixing diaphragm 11, repeats no more herein.Absorption stator 13 is the composite construction that absorption adhesion layer and absorption connect sheet, absorption connects the specific constructive form of sheet can adopt the form connecting absorption diaphragm 8, absorption adhesion layer can adopt the concrete form of diaphragm adhesion layer 9, specifically it is referred to connect absorption diaphragm 8 and the illustrating of diaphragm adhesion layer 9, repeats no more herein.
During use, wafer 4 is embedded the wafer connecting location diaphragm 12 and connects in hole, location, fix the one side that wafer 4 is polished, cover wafer 4 with absorption adhesion layer and connect the surface that location diaphragm 12 is corresponding, during operation, avoiding bubble to produce;Or fix absorption and connect sheet, be fixed on absorption adhesion layer by the mode being bonded connecting location diaphragm 12 and wafer 4.
During polishing, absorption is connected sheet and is adsorbed in adsorbent pad 7, utilize protection edge 6 that connection location diaphragm 12 and absorption stator 13 are protected, it is prevented that it skids off template housing 5 in polishing process;After polishing terminates, to carrying out between wafer 4 and absorption stator 13 solving viscosity process, it is possible to quickly take off wafer 4.
To sum up; the wafer fixing means of this utility model wafer vacuum absorption template; particularly as follows: be connected fixing to polished wafer 4 and wafer fixed body; described wafer fixed body adopts vac sorb mode to be adsorbed in adsorbent pad 7, and the wafer 4 being connected with described wafer fixed body is positioned at the protection domain at protection edge 6.
Polished wafer 4 is connected with adsorbent pad 7 by this utility model by wafer fixed body, and wafer fixed body is suitable with template housing 5, it is possible to effectively reduce the slip in wafer 4 polishing process;The wafer 4 meeting arbitrary dimension and shape by the fixing physical ability of wafer connects fixed demand, and after wafer 4 polishes, energy sharp separation, compact conformation, mutually compatible with existing technique, shorten the process-cycle, reduction processing cost, wide accommodation, safe and reliable.
It will be apparent to one skilled in the art that this utility model is not limited to the details of above-mentioned one exemplary embodiment, and when without departing substantially from spirit of the present utility model or basic feature, it is possible to realize this utility model in other specific forms.Therefore, no matter from which point, embodiment all should be regarded as exemplary, and be nonrestrictive, scope of the present utility model is limited by claims rather than described above, it is intended that all changes in the implication of the equivalency dropping on claim and scope included in this utility model.Any accompanying drawing labelling in claim should be considered as the claim that restriction is involved.
In addition, it is to be understood that, although this specification is been described by according to embodiment, but not each embodiment only comprises an independent technical scheme, this narrating mode of description is only for clarity sake, description should be made as a whole by those skilled in the art, and the technical scheme in each embodiment through appropriately combined, can also form other embodiments that it will be appreciated by those skilled in the art that.

Claims (7)

1. a wafer vacuum absorption template, has the template housing (5) at protection edge (6) including outer ring and is positioned at the adsorbent pad (7) of described template housing (5);It is characterized in that: also include for fixed wafer (4) and the wafer fixed body adaptive with template housing (5); the fixing physical ability of described wafer is connected with adsorbent pad (7) vac sorb; and after wafer fixed body is connected with adsorbent pad (7) vac sorb, the wafer (4) being connected with described wafer fixed body is positioned at the protection domain of protection edge (6).
2. wafer vacuum according to claim 1 absorption template, it is characterized in that: described wafer fixed body includes connecting absorption diaphragm (8) and being positioned at the described diaphragm adhesion layer (9) connecting and having capacity of decomposition in absorption diaphragm (8), wafer (4) can fixing with diaphragm adhesion layer (9) be connected, and connects absorption diaphragm (8) energy vac sorb in adsorbent pad (7).
3. wafer vacuum according to claim 2 absorption template, is characterized in that: the described thickness connecting absorption diaphragm (8) is 10 μm ~ 5mm, and the thickness of diaphragm adhesion layer (9) is 10 μm ~ 300 μm;The capacity of decomposition of described diaphragm adhesion layer (9) includes photodissociation or pyrolysis.
4. wafer vacuum according to claim 1 absorption template, it is characterized in that: described wafer fixed body includes adsorbing fixing diaphragm (11), described absorption is fixed and is arranged some permission wafers (4) in diaphragm (11) and set and the wafer suitable with described wafer (4) absorption fixing hole, and the fixing diaphragm (11) of absorption can be connected with adsorbent pad (7) vac sorb.
5. wafer vacuum according to claim 4 absorption template, it is characterized in that: described wafer absorption fixing hole is square or circular, the thickness of the fixing diaphragm (11) of absorption is 10 μm ~ 5mm, and described absorption is fixed the thickness of diaphragm (11) and is not more than the thickness of wafer (4).
6. wafer vacuum according to claim 1 absorption template, it is characterized in that: described wafer fixed body also includes connecting location diaphragm (12) and being connected, with described, the absorption stator (13) that location diaphragm (12) is fixing, arranging preposition and suitable with described wafer (4) wafer of some permission wafers (4) in described connection location diaphragm (12) and be connected hole, location, described absorption stator (13) energy vac sorb is in adsorbent pad (7).
7. wafer vacuum according to claim 6 absorption template, it is characterized in that: described wafer connects hole, location and is square or circular, the thickness connecting location diaphragm (12) is 100 μm ~ 1mm, described absorption stator (13) include for wafer (4) and be connected the absorption adhesion layer that location diaphragm (12) is fixing, described absorption adhesion layer and the absorption connection sheet for being connected with adsorbent pad (7) vac sorb.
CN201620059674.3U 2016-01-21 2016-01-21 Wafer vacuum adsorption template Active CN205342779U (en)

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105619240A (en) * 2016-01-21 2016-06-01 苏州新美光纳米科技有限公司 Chip vacuum adsorption template and method
CN109605137A (en) * 2018-12-27 2019-04-12 衢州晶哲电子材料有限公司 A kind of unpowered rotation of silicon wafer is without wax polishing template and its polishing method
CN116878427A (en) * 2023-07-26 2023-10-13 广东微容电子科技有限公司 Interferometry method and device for surface roughness of printed diaphragm

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105619240A (en) * 2016-01-21 2016-06-01 苏州新美光纳米科技有限公司 Chip vacuum adsorption template and method
CN109605137A (en) * 2018-12-27 2019-04-12 衢州晶哲电子材料有限公司 A kind of unpowered rotation of silicon wafer is without wax polishing template and its polishing method
CN116878427A (en) * 2023-07-26 2023-10-13 广东微容电子科技有限公司 Interferometry method and device for surface roughness of printed diaphragm
CN116878427B (en) * 2023-07-26 2024-03-19 广东微容电子科技有限公司 Interferometry method and device for surface roughness of printed diaphragm

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Address after: 215000 room 103, building C, North District, Founder science park, No. 188, Suhong East Road, Suzhou Industrial Park, Suzhou area, China (Jiangsu) pilot Free Trade Zone, Suzhou City, Jiangsu Province

Patentee after: New Meguiar (Suzhou) semiconductor technology Co.,Ltd.

Address before: 215123 south of 1 / F, building 20, Northwest District, nano City, No. 99, Jinjihu Avenue, Suzhou Industrial Park, Suzhou, Jiangsu Province

Patentee before: SUZHOU SICREAT NANOTECH Co.,Ltd.

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