CN105619240A - Chip vacuum adsorption template and method - Google Patents

Chip vacuum adsorption template and method Download PDF

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Publication number
CN105619240A
CN105619240A CN201610040623.0A CN201610040623A CN105619240A CN 105619240 A CN105619240 A CN 105619240A CN 201610040623 A CN201610040623 A CN 201610040623A CN 105619240 A CN105619240 A CN 105619240A
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China
Prior art keywords
wafer
absorption
diaphragm
fixing
template
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Pending
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CN201610040623.0A
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Chinese (zh)
Inventor
夏秋良
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Suzhou Nanosecond Science And Technology Co Ltd Of New Micron Technology
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Suzhou Nanosecond Science And Technology Co Ltd Of New Micron Technology
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Application filed by Suzhou Nanosecond Science And Technology Co Ltd Of New Micron Technology filed Critical Suzhou Nanosecond Science And Technology Co Ltd Of New Micron Technology
Priority to CN201610040623.0A priority Critical patent/CN105619240A/en
Publication of CN105619240A publication Critical patent/CN105619240A/en
Pending legal-status Critical Current

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    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/27Work carriers
    • B24B37/30Work carriers for single side lapping of plane surfaces

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)

Abstract

The invention relates to a chip fixing device and a chip fixing method, in particular to a chip vacuum adsorption template and method, and belongs to the technical field of chip polishing. According to the technical scheme provided by the invention, the chip vacuum adsorption template comprises a template shell and an adsorption gasket located in the template shell, and the outer ring of the template shell is provided with a protective edge. The chip vacuum adsorption template further comprises a chip fixing body which is used for fixing a chip and matched with the template shell. The chip fixing body can be connected with the adsorption gasket in a vacuum adsorption mode, and after the chip fixing body is connected with the adsorption gasket in the vacuum adsorption mode, the chip connected with the chip fixing body is located within the protective range of the protective edge. The chip vacuum adsorption template is compact in structure, is compatible with the existing process, can fix various chips, shortens the processing period, lowers the processing cost, and is wide in adaptation range, safe and reliable.

Description

Wafer vacuum absorption template and method
Technical field
The present invention relates to a kind of wafer clamping apparatus and fixing means, especially a kind of wafer vacuum adsorbs template and method, belongs to the technical field of wafer polishing.
Background technology
Chemically mechanical polishing (CMP) technology is one of key technology of wafer surface processing, is used widely in the processing of surface polishing of large scale bare crystalline sheet (such as ultra-thin silicon single-chip used for solar batteries), integrated circuit ultra-thin silicon single-chip, LED sapphire substrate wafer etc.
Polishing can improve the roughness of wafer surface, reduces the TTV of wafer, realizes the flatness of superelevation in wafer surface, can also improve its utilization rate to light for some optics wafers. Such as, in the manufacture process of integrated circuit, Silicon Wafer substrate often constructing thousands of construction unit, these construction units form the device of functional circuitry further by multiple layer metal interconnection. In multiple layer metal interconnection architecture, filled media layer between plain conductor, development along with integrated circuit technique, metal live width is more and more less, the wiring number of plies gets more and more, now utilize CMP that the dielectric layer of wafer surface carries out planarization to process and can aid in the making of multilayer line, and can prevent from being coated in dielectric layer the distortion caused on not plane surface. The back of the body polishing technology of ultra-thin silicon single-chip used for solar batteries then can be substantially improved the optics benefit of solar silicon wafers, strengthen silicon chip back surface passivation effect, promote the photoelectric transformation efficiency of solaode, and mainstream technology superposition that can be relevant to heliotechnics, compatible good, solar cell properties can be improved further, advance the development of high efficiency solar cell industrialization. At other field, such as fields such as LED, liquid crystal panels, CMP is then widely used in Sapphire Substrate, the processing of liquid-crystalline glasses panel etc.
The process that CMP process is a mechanism and chemical action balances each other. As, in the polishing process of silicon wafer, first secured the wafer on rubbing head, under the pressure of rubbing head, the rotation of the rotation of wafer, polishing disk cause the friction of wafer and polishing pad. Now chemical action is polishing fluid and the wafer surface contact generation corrosion reaction of alkalescence, and wafer surface by alkali liquid corrosion, can rub and then removed by this corrosion layer, by circulating the two mechanism, it is possible to realize the polishing of wafer. At present wafer being fixed on the method on rubbing head and mainly have paraffin mounting method, water surface tension absorption method (is also template), porous ceramics formula vac sorb method, Electrostatic Absorption method etc.
In the middle of actual production, more be first two, in view of paraffin mounting method costly and the process-cycle longer, therefore template is increasingly taken seriously. But template has one disadvantage in that, for instance 12 cun of vac sorb templates of general customization can only be used as the polishing of 12 cun of wafers, and the THICKNESS CONTROL of wafer requires strict. If processing the wafer of other sizes or other shapes, then again ordering and make vac sorb template, not only costly, the time cycle that template prepares is also long, greatly limit the development of polishing business.
Summary of the invention
It is an object of the invention to overcome the deficiencies in the prior art, it is provided that a kind of wafer vacuum absorption template and method, its compact conformation, mutually compatible with existing technique, the fixing of multiple wafer can be realized, shorten the process-cycle, reduction processing cost, wide accommodation, safe and reliable.
According to technical scheme provided by the invention, described wafer vacuum absorption template, including outer ring, there is the template housing at protection edge and be positioned at the adsorbent pad of described template housing; Also include for fixed wafer and with the wafer fixed body of template casing adaptor; the fixing physical ability of described wafer is connected with adsorbent pad vac sorb; and after wafer fixed body is connected with adsorbent pad vac sorb, the wafer being connected with described wafer fixed body is positioned at the protection domain at protection edge.
Described wafer fixed body includes connecting absorption diaphragm and being positioned at the described diaphragm adhesion layer connecting and having capacity of decomposition on absorption diaphragm, and wafer can fixing with diaphragm adhesion layer be connected, and connects absorption diaphragm energy vac sorb in adsorbent pad.
The described thickness connecting absorption diaphragm is 10 ��m ~ 5mm, and the thickness of diaphragm adhesion layer is 10 ��m ~ 300 ��m; The capacity of decomposition of described diaphragm adhesion layer includes photodissociation or pyrolysis.
Described wafer fixed body includes adsorbing fixing diaphragm, arranges some permission wafers and sets and the wafer suitable with described wafer absorption fixing hole, and the fixing diaphragm of absorption can be connected with adsorbent pad vac sorb in the fixing diaphragm of described absorption.
Described wafer absorption fixing hole is square or circular, and the thickness of the fixing diaphragm of absorption is 10 ��m ~ 5mm, and the thickness of the fixing diaphragm of described absorption is not more than the thickness of wafer.
Described wafer fixed body also includes connecting location diaphragm and being connected, with described, the absorption stator that location diaphragm is fixing, arranging preposition and suitable with the described wafer wafer of some permission wafers in the diaphragm of described connection location and be connected hole, location, described absorption stator energy vac sorb is in adsorbent pad.
Described wafer connects hole, location and is square or circular, the thickness connecting location diaphragm is 100 ��m ~ 1mm, described absorption stator include for wafer and be connected the absorption adhesion layer that location diaphragm is fixing, described absorption adhesion layer and the absorption connection sheet for being connected with adsorbent pad vac sorb.
A kind of wafer fixing means of wafer vacuum absorption template; it is connected fixing to polished wafer and wafer fixed body; described wafer fixed body adopts vac sorb mode to be adsorbed in adsorbent pad, and the wafer being connected with described wafer fixed body is positioned at the protection domain at protection edge.
Described wafer fixed body includes connecting absorption diaphragm and being positioned at the described diaphragm adhesion layer connecting and having capacity of decomposition on absorption diaphragm, and wafer can fixing with diaphragm adhesion layer be connected, and connects absorption diaphragm energy vac sorb in adsorbent pad.
Described wafer fixed body includes adsorbing fixing diaphragm, arranges some permission wafers and sets and the wafer suitable with described wafer absorption fixing hole, and the fixing diaphragm of absorption can be connected with adsorbent pad vac sorb in the fixing diaphragm of described absorption.
Advantages of the present invention: polished wafer is connected with adsorbent pad by wafer fixed body, wafer fixed body is suitable with template housing, it is possible to effectively reduce the slip in wafer polishing process; The wafer being met arbitrary dimension and shape by the fixing physical ability of wafer connects fixed demand, and after wafer polishing, energy sharp separation, compact conformation, mutually compatible with existing technique, shorten the process-cycle, reduction processing cost, wide accommodation, safe and reliable.
Accompanying drawing explanation
Fig. 1 is the existing schematic diagram that wafer is polished.
Fig. 2 is the schematic diagram of existing wafer vacuum absorption template.
Fig. 3 is the first embodiment schematic diagram of wafer fixed body of the present invention.
Fig. 4 is the schematic diagram that wafer of the present invention is fixing with diaphragm adhesion layer.
Fig. 5 is that wafer of the present invention is placed in the schematic diagram in template housing by wafer fixed body.
Fig. 6 is the schematic diagram that the present invention utilizes photodissociation to be separated with diaphragm adhesion layer by wafer.
Fig. 7 is the second embodiment schematic diagram of wafer fixed body of the present invention.
Fig. 8 is that the one that wafer of the present invention is placed in the fixing diaphragm of absorption implements schematic diagram.
Fig. 9 is that the another kind that wafer of the present invention is placed in the fixing diaphragm of absorption implements schematic diagram.
Figure 10 is that the present invention adsorbs the thickness of fixing diaphragm and wafer thickness schematic diagram time identical.
Figure 11 is the schematic diagram that the present invention adsorbs when the thickness of fixing diaphragm is slightly less than wafer thickness.
Figure 12 is present invention schematic diagram when adsorbing the thickness of fixing diaphragm much smaller than wafer thickness.
Figure 13 is the third embodiment schematic diagram of wafer fixed body of the present invention.
Figure 14 is the schematic diagram that wafer is placed in template housing by the wafer fixed body utilizing Figure 13.
Description of reference numerals: 1-polishes deep bid, 2-polishing pad, 3-clamping device, 4-wafer, 5-template housing, 6-protection edge, 7-adsorbent pad, 8-connection absorption diaphragm, 9-diaphragm adhesion layer, 10-illumination, the fixing diaphragm of 11-absorption, 12-connection positions diaphragm and 13-adsorbs stator.
Detailed description of the invention
Below in conjunction with concrete drawings and Examples, the invention will be further described.
As shown in Figure 1, for wafer 4 being carried out the schematic diagram of single-sided polishing, clamping device 3 fixes wafer 4 by absorption method or method of pasting, with certain pressure, wafer 4 is pressed on polishing pad 2, polishing deep bid 1 rotates simultaneously, now the relative polishing pad 2 of wafer 4 will form the state revolved round the sun in the center around center wafer rotation with around polishing pad 2, sprays polishing fluid simultaneously, and wafer 4 surface will be polished;
As shown in Figure 2; vac sorb template for fixed wafer 4 general at present; described vac sorb template includes template housing 5; there is the edge that a circle protrudes at the edge of described template housing 5; namely the edge of template housing 5 forms protection edge 6; adsorbent pad 7 is had inside protection shell 5; during use, wafer 4 is placed in below adsorbent pad 7; and utilize the mode of vac sorb to be adsorbed with adsorbent pad 7 phase by wafer 4; make it will not slide to surrounding by protecting edge 6 to block wafer 4, reduce the risk of fragment. Owing to wafer 4 can slide by relative adsorption liner 7, therefore, existing vac sorb template is difficult to meet the polishing requirement of different chips 4.
In order to be able to realize the fixing of multiple wafer 4, shortening the process-cycle, reduce processing cost, the present invention includes outer ring to be had the template housing 5 at protection edge 6 and is positioned at the adsorbent pad 7 of described template housing 5; Also include for fixed wafer 4 and with the wafer fixed body of template housing 5 adaptation; the fixing physical ability of described wafer is connected with adsorbent pad 7 vac sorb; and after wafer fixed body is connected with adsorbent pad 7 vac sorb, the wafer 4 being connected with described wafer fixed body is positioned at the protection domain at protection edge 6.
Specifically, wafer 4 can keep stationary state with described wafer fixed body after being connected with wafer fixed body, wafer fixed body is suitable with template housing 5 refers to that the fixing physical ability of wafer is placed in template housing 5 and the size of described wafer fixed body can be consistent with adsorbent pad 7 size or be slightly less than the size of adsorbent pad 7, thus after wafer fixed body is connected with adsorbent pad 7 absorption, the slip between wafer fixed body and adsorbent pad 7 can be reduced, the wafer 4 making arbitrary dimension all can realize mating of the absorption template with template housing 5 and adsorbent pad 7 composition by wafer fixed body after being connected, utilize protection edge 6 can realize the protection to wafer 4 polishing process, it is thus possible to the polishing process of adaptive multiple wafer 4, without the vac sorb template that custom-made is consistent with wafer 4, shorten the process-cycle, reduce production cost.
As shown in Figure 3, described wafer fixed body includes connecting absorption diaphragm 8 and being positioned at the described diaphragm adhesion layer 9 connecting and having capacity of decomposition on absorption diaphragm 8, wafer 4 can fixing with diaphragm adhesion layer 9 be connected, and connects absorption diaphragm 8 energy vac sorb in adsorbent pad 7.
The described thickness connecting absorption diaphragm 8 is 10 ��m ~ 5mm, and the thickness of diaphragm adhesion layer 9 is 10 ��m ~ 300 ��m; The capacity of decomposition of described diaphragm adhesion layer 9 includes photodissociation or pyrolysis.
In the embodiment of the present invention, connect absorption diaphragm 8 and can be divided into soft diaphragm or hard diaphragm, when connecting absorption diaphragm 8 and being soft diaphragm, the organic membrane of the Organic substance compositions such as connecting absorption diaphragm 8 can be polyethylene, politef; When connecting absorption diaphragm 8 and being hard diaphragm, the film of the material compositions such as connecting absorption diaphragm 8 can be silicon chip, glass, toughened plastic. Connecting absorption diaphragm 8 and also can divide planar diaphragm or latticed diaphragm, wherein, latticed diaphragm can be hollow out, it is also possible to be a facial plane, the latticed form of one side. Diaphragm adhesion layer 9 is organic gel, and diaphragm adhesion layer 9 has photodissociation or pyrolysis. When connecting absorption diaphragm 8 and being latticed diaphragm, diaphragm adhesion layer 9 is positioned at connection absorption diaphragm 8 and has latticed surface.
As shown in Figure 4, during use, wafer 4 is fixed polished one side, cover the another side of wafer 4 with the diaphragm adhesion layer 9 connected on absorption diaphragm 8, during operation, avoid bubble to produce; Or connection is adsorbed diaphragm 8 fix, wafer 4 is fixed on diaphragm adhesion layer 9 by the mode tiled or be bonded.
During polishing, diaphragm 8 is adsorbed in connection and is adsorbed in adsorbent pad 7, utilize protection edge 6 to protect connecting absorption diaphragm 8, diaphragm adhesion layer 9 and wafer 4, it is prevented that connect absorption diaphragm 8 and skid off outside template housing 5 in polishing process, as shown in Figure 5; After polishing terminates, wafer 4 and diaphragm adhesion layer 9 are carried out solves viscosity and process, as shown in Figure 6, such as illumination 10(such as ultraviolet light) to irradiate, heating etc. processes, it is possible to quickly take off wafer 4, it is achieved wafer 4 and separating of connecting absorption diaphragm 8 and template housing 5.
As shown in Figure 7, Figure 8 and Figure 9, described wafer fixed body includes adsorbing fixing diaphragm 11, arrange some permission wafers 4 in the fixing diaphragm 11 of described absorption to set and the wafer suitable with described wafer 4 absorption fixing hole, and the fixing diaphragm 11 of absorption can be connected with adsorbent pad 7 vac sorb.
Described wafer absorption fixing hole is square or circular, and the thickness of the fixing diaphragm 11 of absorption is 10 ��m ~ 5mm, and the thickness of the fixing diaphragm 11 of described absorption is not more than the thickness of wafer 4.
In the embodiment of the present invention, wafer fixed body can also adopt the form of the fixing diaphragm 11 of absorption, and the fixing diaphragm 11 of absorption can be soft diaphragm or hard diaphragm; When the fixing diaphragm 11 of absorption is soft diaphragm, the organic membrane of the Organic substance compositions such as the fixing diaphragm 11 of absorption can be polyethylene, politef; When the fixing diaphragm 11 of absorption is hard diaphragm, the film of the material compositions such as the fixing diaphragm 11 of absorption can be silicon chip, glass, toughened plastic. Additionally, the fixing diaphragm 11 of absorption is further divided into planar diaphragm or latticed diaphragm, when the fixing diaphragm 11 of absorption is latticed diaphragm, the fixing diaphragm 11 of absorption can be hollow out, it is also possible to be a facial plane, a surface grids. Wafer absorption fixing hole through absorption can fix diaphragm 11, can also be caved inward formation from a surface of the fixing diaphragm 11 of absorption, specifically can select as required, as long as disclosure satisfy that wafer 4 keeps fixing with the described absorption diaphragm 11 that is connected after setting.
Wafer absorption fixing hole is square or circular, size and the shape of wafer absorption fixing hole be identical or big 10 ��m ~ 1mm with wafer 4 to be processed, groove can be circular can also be square etc., during operation, first fixing for absorption diaphragm 11 is inserted in template housing 5 and adsorbed with adsorbent pad 7 and be connected, then wafer 4 is embedded in wafer absorption fixing hole. Fig. 8 is the situation utilizing the wafer fixing square wafer 4 of absorption fixing hole, and Fig. 9 is the situation utilizing the wafer fixing Circular wafer 4 of absorption fixing hole.
Usually, the thickness of the fixing diaphragm 11 of absorption is not more than the thickness of wafer 4, as shown in Figure 10, Figure 11 and Figure 12. The fixing diaphragm 11 of absorption directly adsorbs mutually with adsorbent pad 7; the fixing diaphragm 11 of absorption is positioned at template housing 5; it is positioned at the protection domain at protection edge 6; avoid when polishing; skid off outside template housing 5; the size of the fixing diaphragm 11 of absorption is suitable with adsorbent pad 7; when wafer 4 is polished; can effectively reduce the fixing relative sliding between diaphragm 11 and adsorbent pad 7 of absorption; by adsorbing coordinating between fixing diaphragm 11 and adsorbent pad 7, it is possible to effectively realize the needs of multiple wafer 4 polishing.
As shown in Figure 13, Figure 14, described wafer fixed body also includes connecting location diaphragm 12 and being connected, with described, the absorption stator 13 that location diaphragm 12 is fixing, arranging preposition and suitable with described wafer 4 wafer of some permission wafers 4 in the diaphragm 12 of described connection location and be connected hole, location, described absorption stator 13 energy vac sorb is in adsorbent pad 7.
Described wafer connects hole, location and is square or circular, the thickness connecting location diaphragm 12 is 100 ��m ~ 1mm, described absorption stator 13 include for wafer 4 and be connected the absorption adhesion layer that location diaphragm 12 is fixing, described absorption adhesion layer and the absorption connection sheet for being connected with adsorbent pad 7 vac sorb.
In the embodiment of the present invention, wafer fixed body can also adopt the fit form connecting location diaphragm 12 and absorption stator 13, connect and there is in the diaphragm 12 of location hole, wafer connection location, connect being embodied as structure and can adopting the form of the fixing diaphragm 11 of absorption of location diaphragm 12, specifically it is referred to adsorb the explanation of fixing diaphragm 11, repeats no more herein. Absorption stator 13 is the composite construction that absorption adhesion layer and absorption connect sheet, absorption connects the specific constructive form of sheet can adopt the form connecting absorption diaphragm 8, absorption adhesion layer can adopt the concrete form of diaphragm adhesion layer 9, specifically it is referred to connect absorption diaphragm 8 and the illustrating of diaphragm adhesion layer 9, repeats no more herein.
During use, wafer 4 is embedded the wafer connecting location diaphragm 12 and connects in hole, location, fix the one side that wafer 4 is polished, cover wafer 4 with absorption adhesion layer and connect the surface that location diaphragm 12 is corresponding, during operation, avoiding bubble to produce; Or fix absorption and connect sheet, be fixed on absorption adhesion layer by the mode being bonded connecting location diaphragm 12 and wafer 4.
During polishing, absorption is connected sheet and is adsorbed in adsorbent pad 7, utilize protection edge 6 that connection location diaphragm 12 and absorption stator 13 are protected, it is prevented that it skids off template housing 5 in polishing process; After polishing terminates, to carrying out between wafer 4 and absorption stator 13 solving viscosity process, it is possible to quickly take off wafer 4.
To sum up; the wafer fixing means of wafer vacuum of the present invention absorption template; particularly as follows: be connected fixing to polished wafer 4 and wafer fixed body; described wafer fixed body adopts vac sorb mode to be adsorbed in adsorbent pad 7, and the wafer 4 being connected with described wafer fixed body is positioned at the protection domain at protection edge 6.
Polished wafer 4 is connected with adsorbent pad 7 by the present invention by wafer fixed body, and wafer fixed body is suitable with template housing 5, it is possible to effectively reduce the slip in wafer 4 polishing process; The wafer 4 meeting arbitrary dimension and shape by the fixing physical ability of wafer connects fixed demand, and after wafer 4 polishes, energy sharp separation, compact conformation, mutually compatible with existing technique, shorten the process-cycle, reduction processing cost, wide accommodation, safe and reliable.
It will be apparent to one skilled in the art that the invention is not restricted to the details of above-mentioned one exemplary embodiment, and when without departing substantially from the spirit of the present invention or basic feature, it is possible to realize the present invention in other specific forms. Therefore, no matter from which point, embodiment all should be regarded as exemplary, and be nonrestrictive, the scope of the invention rather than described above limits, it is intended that all changes in the implication of the equivalency dropping on claim and scope included in the present invention. Any accompanying drawing labelling in claim should be considered as the claim that restriction is involved.
In addition, it is to be understood that, although this specification is been described by according to embodiment, but not each embodiment only comprises an independent technical scheme, this narrating mode of description is only for clarity sake, description should be made as a whole by those skilled in the art, and the technical scheme in each embodiment through appropriately combined, can also form other embodiments that it will be appreciated by those skilled in the art that.

Claims (10)

1. a wafer vacuum absorption template, has the template housing (5) at protection edge (6) including outer ring and is positioned at the adsorbent pad (7) of described template housing (5); It is characterized in that: also include for fixed wafer (4) and the wafer fixed body adaptive with template housing (5); the fixing physical ability of described wafer is connected with adsorbent pad (7) vac sorb; and after wafer fixed body is connected with adsorbent pad (7) vac sorb, the wafer (4) being connected with described wafer fixed body is positioned at the protection domain of protection edge (6).
2. wafer vacuum according to claim 1 absorption template, it is characterized in that: described wafer fixed body includes connecting absorption diaphragm (8) and being positioned at the described diaphragm adhesion layer (9) connecting and having capacity of decomposition in absorption diaphragm (8), wafer (4) can fixing with diaphragm adhesion layer (9) be connected, and connects absorption diaphragm (8) energy vac sorb in adsorbent pad (7).
3. wafer vacuum according to claim 2 absorption template, is characterized in that: the described thickness connecting absorption diaphragm (8) is 10 ��m ~ 5mm, and the thickness of diaphragm adhesion layer (9) is 10 ��m ~ 300 ��m; The capacity of decomposition of described diaphragm adhesion layer (9) includes photodissociation or pyrolysis.
4. wafer vacuum according to claim 1 absorption template, it is characterized in that: described wafer fixed body includes adsorbing fixing diaphragm (11), described absorption is fixed and is arranged some permission wafers (4) in diaphragm (11) and set and the wafer suitable with described wafer (4) absorption fixing hole, and the fixing diaphragm (11) of absorption can be connected with adsorbent pad (7) vac sorb.
5. wafer vacuum according to claim 4 absorption template, it is characterized in that: described wafer absorption fixing hole is square or circular, the thickness of the fixing diaphragm (11) of absorption is 10 ��m ~ 5mm, and described absorption is fixed the thickness of diaphragm (11) and is not more than the thickness of wafer (4).
6. wafer vacuum according to claim 1 absorption template, it is characterized in that: described wafer fixed body also includes connecting location diaphragm (12) and being connected, with described, the absorption stator (13) that location diaphragm (12) is fixing, arranging preposition and suitable with described wafer (4) wafer of some permission wafers (4) in described connection location diaphragm (12) and be connected hole, location, described absorption stator (13) energy vac sorb is in adsorbent pad (7).
7. wafer vacuum according to claim 6 absorption template, it is characterized in that: described wafer connects hole, location and is square or circular, the thickness connecting location diaphragm (12) is 100 ��m ~ 1mm, described absorption stator (13) include for wafer (4) and be connected the absorption adhesion layer that location diaphragm (12) is fixing, described absorption adhesion layer and the absorption connection sheet for being connected with adsorbent pad (7) vac sorb.
8. the wafer fixing means of a wafer vacuum absorption template; it is characterized in that: be connected fixing to polished wafer (4) and wafer fixed body; described wafer fixed body adopts vac sorb mode to be adsorbed in adsorbent pad (7), and the wafer (4) being connected with described wafer fixed body is positioned at the protection domain of protection edge (6).
9. the wafer fixing means of wafer vacuum according to claim 8 absorption template, it is characterized in that: described wafer fixed body includes connecting absorption diaphragm (8) and being positioned at the described diaphragm adhesion layer (9) connecting and having capacity of decomposition in absorption diaphragm (8), wafer (4) can fixing with diaphragm adhesion layer (9) be connected, and connects absorption diaphragm (8) energy vac sorb in adsorbent pad (7).
10. the wafer fixing means of wafer vacuum according to claim 8 absorption template, it is characterized in that: described wafer fixed body includes adsorbing fixing diaphragm (11), described absorption is fixed and is arranged some permission wafers (4) in diaphragm (11) and set and the wafer suitable with described wafer (4) absorption fixing hole, and the fixing diaphragm (11) of absorption can be connected with adsorbent pad (7) vac sorb.
CN201610040623.0A 2016-01-21 2016-01-21 Chip vacuum adsorption template and method Pending CN105619240A (en)

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Publication number Priority date Publication date Assignee Title
CN109605137A (en) * 2018-12-27 2019-04-12 衢州晶哲电子材料有限公司 A kind of unpowered rotation of silicon wafer is without wax polishing template and its polishing method
CN115990802A (en) * 2023-03-22 2023-04-21 之江实验室 Carrier and polishing apparatus

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CN203371372U (en) * 2013-07-01 2014-01-01 昆明物理研究所 Infrared detector wafer back thinning polishing device
CN204868514U (en) * 2015-07-27 2015-12-16 扬州晶新微电子有限公司 Machining tool is assisted to small -size silicon wafer attenuate based on 4 inch silicon wafer
CN205342779U (en) * 2016-01-21 2016-06-29 苏州新美光纳米科技有限公司 Wafer vacuum adsorption template

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Publication number Priority date Publication date Assignee Title
JPH10335277A (en) * 1997-05-29 1998-12-18 Seiko Epson Corp Polishing apparatus and method
KR20050018285A (en) * 2003-08-16 2005-02-23 두산디앤디 주식회사 Wafer support assembly applied to polishing carrier head for CMP System
CN101007396A (en) * 2006-01-24 2007-08-01 联华电子股份有限公司 Application of polishing head in chemico-mechanical polishing technology and polishing method of chemico-mechanical
JP2011067888A (en) * 2009-09-25 2011-04-07 Shin Etsu Polymer Co Ltd Chuck table for semiconductor wafer, and method of processing semiconductor wafer
CN102039555A (en) * 2009-10-26 2011-05-04 中芯国际集成电路制造(上海)有限公司 Grinding head device
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CN203371372U (en) * 2013-07-01 2014-01-01 昆明物理研究所 Infrared detector wafer back thinning polishing device
CN204868514U (en) * 2015-07-27 2015-12-16 扬州晶新微电子有限公司 Machining tool is assisted to small -size silicon wafer attenuate based on 4 inch silicon wafer
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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109605137A (en) * 2018-12-27 2019-04-12 衢州晶哲电子材料有限公司 A kind of unpowered rotation of silicon wafer is without wax polishing template and its polishing method
CN115990802A (en) * 2023-03-22 2023-04-21 之江实验室 Carrier and polishing apparatus

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