CN205313108U - A graphite guard shield for graphite subassembly for polycrystalline silicon reduction furnace - Google Patents
A graphite guard shield for graphite subassembly for polycrystalline silicon reduction furnace Download PDFInfo
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- CN205313108U CN205313108U CN201520947853.6U CN201520947853U CN205313108U CN 205313108 U CN205313108 U CN 205313108U CN 201520947853 U CN201520947853 U CN 201520947853U CN 205313108 U CN205313108 U CN 205313108U
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Abstract
The utility model discloses a graphite guard shield for graphite subassembly for polycrystalline silicon reduction furnace, the graphite subassembly is used for fixed silicon core, its characterized in that: the graphite guard shield is isolation parts for it is located the outside part of graphite subassembly to keep apart graphite subassembly and silicon core. Compared with the prior art, the utility model has following advantage: simple structure, compactness, reasonable use simple to operate, reduce the quantity of graphite by a wide margin, can reach completely simultaneously to prevent the purpose of siliceous deposits to the graphite subassembly, and the separation of be convenient for graphite subassembly and silicon core also does benefit to the reuse of split type graphite subassembly.
Description
Technical field
The utility model relates to a kind of for polycrystalline silicon reducing furnace graphite components protection method, and a kind of graphite guard shield for polycrystalline silicon reducing furnace graphite components, belongs to polycrystalline silicon reducing furnace graphite components technical field specifically.
Background technology
Polysilicon is for the production of the main raw material of semi-conductor and photovoltaic product, the current main method for the production of polysilicon has the methods such as improved Siemens, silane method, sulfuration bed process, wherein improved Siemens and silane method all need deposition carrier in reduction process, now widely used is silicon core, comprise square silicon core, circular silicon core etc., it is connected by graphite components and blocks tight between silicon core and electrode.
Owing to the polysilicon large-scale production of China is started late; relevant production technology mainly rests in the minority developed country such as America and Europe, Japan hand; industry overall technology is weak, no matter in scale, quality product or in production cost control, is all in a disadvantageous position in whole international competition. So lifting prior art, reduce the task of top priority that production cost becomes numerous manufacturer. This patent is exactly the production cost of the reduction link in order to reduce polysilicon, a kind of not only cheap but also polycrystalline silicon reducing furnace graphite components of handled easily is provided, can the consumption of much slower graphite, and graphite base can accomplish recycling, the object of the tight silicon core of card can be reached, it is possible to the production cost of much slower production of polysilicon enterprise simultaneously.
Traditional polycrystalline silicon reducing furnace graphite components is mainly two kinds of modes:
A kind of mode is three-piece formula, comprises graphite base, graphite nut and graphite card lobe three part. There is screw thread graphite base upper end, can be screwed together with graphite nut, and graphite nut center is hole, pass through for graphite card lobe part, card lobe is positioned over above graphite base, and graphite nut is connected with graphite base and after screwing, reaches fixing graphite card lobe and block the object of tight silicon core. This kind of structure is comparatively complicated, it is possible to reach the object of the tight silicon core of card preferably, but uses quantity of graphite relatively big, and cost is higher, installs comparatively loaded down with trivial details and inconvenient.
Another kind of mode is integral type, namely it is processed into square or conical hole in monoblock graphite upper end, silicon core directly inserts in hole, this kind of mode is easy for installation, but there is silicon core and be difficult to the defect problems such as card graphite components tight, whole can only use once, silicon core size error cannot use time bigger, cost is also higher.
Another kind of mode is the practical novel two pieces shell type of my company, comprises graphite base, graphite card lobe two portions.Graphite base and graphite card lobe are socket fitting type structure, there is taper hole graphite base upper end, graphite card lobe two is taper, and the taper on card lobe coordinates with the taper hole on graphite base, by compressing card lobe thus graphite base taper hole also clamps card lobe while clamping silicon core.
For three-piece formula graphite components or two pieces shell type assembly, polysilicon grows (deposition) in reduction furnace, silicon can constantly deposit in silicon core and graphite components, is wrapped in wherein by silicon core, graphite card lobe can be wrapped simultaneously, owing to technique is different, some enterprises even silicon can deposit on graphite base, graphite base is also wrapped up wherein, so just causes the whole graphite components can only single use, add production cost, also cause the cleaning difficulty of crystal bar simultaneously.
Practical novel content
The utility model object is to overcome above-mentioned traditional graphite components weak point, thus a kind of dependable performance is provided, easy to operate, the polycrystalline silicon reducing furnace graphite components guard shield that cost is lower, for polycrystalline silicon reducing furnace graphite components, what be conducive to increase graphite components reuses number of times, also contributes to reducing the rear road cleaning work amount of crystal bar, thus saves production cost.
The utility model for achieving the above object, adopts following technical scheme:
For a graphite guard shield for polycrystalline silicon reducing furnace graphite components, described graphite components is used for fixing silicon core, it is characterised in that: described graphite guard shield is isolation parts, is positioned at graphite components external portion for isolating graphite components and silicon core.
It is characterised in that further: described isolation component shape and described graphite components profile adapt.
Further: described isolation parts are taper type cover body.
Described taper type cover body is prismatic platform or round platform.
Described taper type cover body is that after fan-shaped graphite rolls of paper sheets rises, side is formed by connecting.
Preferred: described fan-shaped graphite scraps of paper side is provided with grafting groove.
The utility model is applicable to the graphite components of various ways: described graphite components is the three-piece formula graphite components of graphite base, graphite nut and graphite card lobe three part composition; Or described graphite components be graphite base, graphite card lobe two portions composition hold socket welding type graphite components; Or described graphite components is integral type structure.
Compared with the prior art the utility model has the following advantages: structure is simple, compact, reasonable, easy to install and use, the consumption of much slower graphite, can reach completely prevents siliceous deposits to the object in graphite components simultaneously, it is convenient to being separated of graphite components and silicon core, also it is beneficial to the recycling of split type graphite components.
Accompanying drawing explanation
Fig. 1 is the utility model and integral type graphite components fit form schematic diagram.
Fig. 2 is the utility model and three-piece formula graphite components fit form schematic diagram.
Fig. 3-5 is three kinds of form schematic diagram that the utility model coordinates with Two Piece Set formula graphite components.
Fig. 6 is fan-shaped graphite paper schematic diagram.
Embodiment
A kind of graphite guard shield 3 for polycrystalline silicon reducing furnace graphite components, is annular as shown in Figure 1, covers integral type graphite components upper surface, and silicon core 2 is fixed in graphite base 1. Circle ring center is enclosed within silicon core 2.
A kind of graphite guard shield 3 for polycrystalline silicon reducing furnace graphite components, is truncated cone-shaped as shown in Figure 2, covers in three-piece formula graphite components, and silicon core 2 is fixed in the graphite card lobe 4 of graphite components, and graphite card lobe 4 is fixed on graphite base 1 by graphite nut 5.Round platform center is on silicon core 2.
A kind of graphite guard shield for polycrystalline silicon reducing furnace graphite components as in Figure 3-5, described graphite components comprises graphite base 1 and graphite card lobe 4, described graphite base 1 and graphite card lobe 4 are socket fitting type structure, and described graphite card lobe 4 inserts in described graphite base 1; Described graphite guard shield 3 is enclosed within graphite card lobe 4, and isolation graphite components and silicon core 2 are positioned at graphite components external portion. The quick-clamping of graphite card lobe 4 can be realized by socket fitting type structure, and the recycling of graphite base 1. Making in polycrystalline silicon growth process by graphite guard shield 3, silicon can not deposit in graphite components.
A kind of form as shown in Figure 3: described graphite guard shield 3 profile and graphite components profile adapt, and are fitted in graphite components, cover graphite components.
A kind of form as shown in Figure 4: described graphite guard shield 3 is truncated cone-shaped, the angle of round platform and the tapering of graphite card lobe 4 one end match, and suitable for reading cover graphite card lobe 4, and the lower flap is lived and graphite card lobe 4 and graphite base 1 combination section.
Another kind of form as shown in Figure 5: described graphite guard shield 3 is suitable for reading the same with graphite card lobe 4 upper end size, and whole graphite base 1 upper surface is covered by lower mouth.
Described graphite guard shield 3 forms lobe by one or more pieces graphite papers and forms, and all can reach the object of protection for the card lobe of different shapes.
As shown in Figure 6, it is preferable that: described graphite guard shield 3 is the fan-shaped graphite scraps of paper of a slice, and fan-shaped graphite scraps of paper side band grafting groove 31, mutually blocks and prevent from dropping.
Same graphite guard shield 3 can also be the prismatic table shape of graphite scraps of paper composition, square or trilateral guard shield.
Claims (7)
1., for a graphite guard shield for polycrystalline silicon reducing furnace graphite components, described graphite components is used for fixing silicon core, it is characterised in that: described graphite guard shield is isolation parts, is positioned at graphite components external portion for isolating graphite components and silicon core.
2. the graphite guard shield for polycrystalline silicon reducing furnace graphite components according to claim 1, it is characterised in that: described isolation component shape and described graphite components profile adapt.
3. the graphite guard shield for polycrystalline silicon reducing furnace graphite components according to claim 1, it is characterised in that: described isolation parts are taper type cover body.
4. the graphite guard shield for polycrystalline silicon reducing furnace graphite components according to claim 3, it is characterised in that: described taper type cover body is prismatic platform or round platform.
5. the graphite guard shield for polycrystalline silicon reducing furnace graphite components according to claim 4, it is characterised in that: described taper type cover body is that after fan-shaped graphite rolls of paper sheets rises, side is formed by connecting.
6. the graphite guard shield for polycrystalline silicon reducing furnace graphite components according to claim 5, it is characterised in that: described fan-shaped graphite scraps of paper side is provided with grafting groove.
7. the graphite guard shield for polycrystalline silicon reducing furnace graphite components according to the arbitrary item of claim 1-6, it is characterised in that: described graphite components is the three-piece formula graphite components of graphite base, graphite nut and graphite card lobe three part composition; Or described graphite components be graphite base, graphite card lobe two portions composition hold socket welding type graphite components; Or described graphite components is integral type structure.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520947853.6U CN205313108U (en) | 2015-11-25 | 2015-11-25 | A graphite guard shield for graphite subassembly for polycrystalline silicon reduction furnace |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520947853.6U CN205313108U (en) | 2015-11-25 | 2015-11-25 | A graphite guard shield for graphite subassembly for polycrystalline silicon reduction furnace |
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| CN205313108U true CN205313108U (en) | 2016-06-15 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105271242A (en) * | 2015-11-25 | 2016-01-27 | 无锡中硅新材料股份有限公司 | Graphite shield of graphite assembly for polycrystalline silicon reduction furnace |
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2015
- 2015-11-25 CN CN201520947853.6U patent/CN205313108U/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105271242A (en) * | 2015-11-25 | 2016-01-27 | 无锡中硅新材料股份有限公司 | Graphite shield of graphite assembly for polycrystalline silicon reduction furnace |
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