CN204454607U - A kind of polycrystalline silicon reducing furnace graphite components - Google Patents
A kind of polycrystalline silicon reducing furnace graphite components Download PDFInfo
- Publication number
- CN204454607U CN204454607U CN201520088882.1U CN201520088882U CN204454607U CN 204454607 U CN204454607 U CN 204454607U CN 201520088882 U CN201520088882 U CN 201520088882U CN 204454607 U CN204454607 U CN 204454607U
- Authority
- CN
- China
- Prior art keywords
- graphite
- installation cavity
- silicon core
- clamping petal
- reducing furnace
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 229910002804 graphite Inorganic materials 0.000 title claims abstract description 87
- 239000010439 graphite Substances 0.000 title claims abstract description 87
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims abstract description 85
- 229910021420 polycrystalline silicon Inorganic materials 0.000 title claims abstract description 21
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 39
- 238000009434 installation Methods 0.000 claims abstract description 32
- 238000004519 manufacturing process Methods 0.000 description 8
- 238000000034 method Methods 0.000 description 5
- 229920005591 polysilicon Polymers 0.000 description 5
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- 238000004064 recycling Methods 0.000 description 2
- 229910000077 silane Inorganic materials 0.000 description 2
- 238000005979 thermal decomposition reaction Methods 0.000 description 2
- 230000006378 damage Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000007770 graphite material Substances 0.000 description 1
- 238000011031 large-scale manufacturing process Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000011946 reduction process Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000005987 sulfurization reaction Methods 0.000 description 1
Landscapes
- Silicon Compounds (AREA)
Abstract
The utility model discloses a kind of polycrystalline silicon reducing furnace graphite components, and comprise graphite base and the graphite clamping petal for fixing silicon core, described graphite base and graphite clamping petal are socket fitting type structure.Be provided with card lobe installation cavity in described graphite base, card lobe installation cavity is up big and down small conical cavity, and graphite clamping petal bottom is the cone-shaped body adapted with described card lobe installation cavity shape, and described graphite clamping petal is clamped in described card lobe installation cavity by lower taper body; Described graphite clamping petal center is provided with silicon core installation cavity, for installing and clamping silicon core.The utility model structure is simple, compact, reasonable, easy to install and use, significantly reduces the consumption of graphite, can reach the object of clamping silicon core completely simultaneously.
Description
Technical field
The utility model relates to a kind of graphite components structure, specifically a kind of polycrystalline silicon reducing furnace graphite components, belongs to polycrystalline silicon reducing furnace graphite components technical field.
Background technology
Polysilicon is the main raw material for the production of semi-conductor and photovoltaic product, main method at present for the production of polysilicon has the method such as improved Siemens, silane thermal decomposition process, sulfuration bed process, wherein improved Siemens and silane thermal decomposition process all need deposition vehicle in reduction process, now widely used is silicon core, comprise square silicon core, circular silicon core etc., silicon core is connected by graphite components with between electrode and clamps.
Because the polysilicon large-scale production of China is started late; relevant production technology mainly rests in the minority developed country such as America and Europe, Japan hand; industry overall technology is weak, no matter in scale, quality product or in production cost control, is all in a disadvantageous position in whole international competition.So lifting prior art, reduce the task of top priority that production cost becomes numerous manufacturer.This patent is exactly the production cost of the reduction link in order to reduce polysilicon, a kind of i.e. cheap but also polycrystalline silicon reducing furnace graphite components of handled easily is provided, significantly can reduce the consumption of graphite, and graphite base can accomplish recycling, the object of clamping silicon core can be reached simultaneously, significantly can reduce the production cost of production of polysilicon enterprise.
Traditional polycrystalline silicon reducing furnace graphite components is mainly two kinds of modes:
A kind of mode is three-piece formula, comprises graphite base, graphite nut and graphite clamping petal three part.There is screw thread graphite base upper end, can be screwed together with graphite nut, and graphite nut center is hole, pass through for graphite clamping petal part, card lobe is positioned over above graphite base, and graphite nut is connected with graphite base and after screwing, and reaches fixing graphite clamping petal and clamps the object of silicon core.This structure is comparatively complicated, can reach the object of clamping silicon core preferably, but uses quantity of graphite comparatively large, and cost is higher, installs comparatively loaded down with trivial details and inconvenient;
Another kind of mode is integral type, namely square or conical hole is processed in monoblock graphite upper end, silicon core directly inserts in hole, this mode is easy for installation, but there is the defect problems such as silicon core is difficult to clamping, whole graphite components can only use once, silicon core scale error cannot use time larger, cost is also higher.
Summary of the invention
The utility model object is to overcome above-mentioned traditional graphite components weak point, thus provides a kind of dependable performance, and easy to operate, lower-cost polycrystalline silicon reducing furnace graphite components, for clamping of polycrystalline silicon reducing furnace silicon core.
The utility model for achieving the above object, adopts following technical scheme:
A kind of polycrystalline silicon reducing furnace graphite components, comprises graphite base and the graphite clamping petal for fixing silicon core, it is characterized in that: described graphite base and graphite clamping petal are socket fitting type structure, and described graphite clamping petal inserts in described graphite base.The quick-clamping of graphite clamping petal can be realized by socket fitting type structure, and the recycling of graphite base.
Its further feature is: be provided with card lobe installation cavity in described graphite base, card lobe installation cavity is up big and down small conical cavity, graphite clamping petal bottom is the cone-shaped body adapted with described card lobe installation cavity shape, and described graphite clamping petal is clamped in described card lobe installation cavity by lower taper body; Described graphite clamping petal center is provided with silicon core installation cavity.Graphite base and graphite clamping petal can be combined closely, and reach good conductive effect, no longer need the object that just can reach clamping silicon core by the mode of traditional screwed tight.Graphite base and graphite clamping petal combine closely by conical cavity and cone-shaped body, intensity and conductivity can reach the performance of integral type graphite components completely, the clamping level of silicon core is exceeded to the intensity of integral type graphite components, the graphite material used is less, and graphite base can reuse, cost also declines to a great extent.
Further: described silicon core installation cavity is square, cylindrical, conical or prismatic etc., can adapt to the requirement of multiple silicon core shape.
Described graphite clamping petal is made up of more than two lobes or two lobes multiple lobe that forms, and the silicon core for different shapes all can reach the object of clamping.
Preferred: to be evenly provided with multiple expansion slot around described silicon core installation cavity, the deformation of graphite clamping petal when silicon core clamps can be absorbed.
Described card lobe installation cavity can be the multiple geometry cone chambeies such as circular cone, Polygons cone.
Compared with the prior art the utility model has the following advantages: structure is simple, compact, reasonable, easy to install and use, significantly reduces the consumption of graphite, can reach the object of clamping silicon core completely simultaneously.
Accompanying drawing explanation
Fig. 1 is the utility model front view.
Fig. 2 is the utility model vertical view.
Description of reference numerals: 1-graphite base, 2-graphite clamping petal, 3-card lobe installation cavity, 4-silicon core installation cavity, 5-expansion slot.
Embodiment
Embodiment in is by reference to the accompanying drawings further described by the utility model below:
As shown in Figure 1-2, the utility model mainly comprises graphite base 1 and graphite clamping petal 2, is provided with card lobe installation cavity 3 in graphite base 1, and card lobe installation cavity 3 is up big and down small conical cavity.
Described graphite clamping petal 2 forms lobe by pintongs and forms, and graphite clamping petal 2 bottom is up big and down small cone-shaped body, and graphite clamping petal 2 is clamped in card lobe installation cavity 3 by lower taper body.
Described graphite clamping petal 2 center is provided with square silicon core installation cavity 4, clamps silicon core in silicon core installation cavity 4.In order to reduce internal stress when silicon core clamps to the destruction of silicon core, being evenly provided with multiple expansion slot 5 around silicon core installation cavity 4, being absorbed the deformation of the graphite clamping petal 2 when silicon core clamps by multiple expansion slot 5.
Described silicon core installation cavity 4 can be square, cylindrical, conical or prismatic etc., can adapt to the requirement of multiple silicon core shape.Described card lobe installation cavity 3 also can be designed to the multiple geometry cone chambeies such as circular cone, tetragon cone as required.
The utility model structure is simple, compact, reasonable, easy to install and use, and cost is lower, significantly reduces the consumption of graphite, can reach the object of clamping silicon core completely simultaneously.
Claims (6)
1. a polycrystalline silicon reducing furnace graphite components, comprise graphite base (1) and the graphite clamping petal (2) for fixing silicon core, it is characterized in that: described graphite base (1) and graphite clamping petal (2) are socket fitting type structure, and described graphite clamping petal (2) inserts in described graphite base (1).
2. polycrystalline silicon reducing furnace graphite components as claimed in claim 1, it is characterized in that: in described graphite base (1), be provided with card lobe installation cavity (3), card lobe installation cavity (3) is up big and down small conical cavity, graphite clamping petal (2) bottom is the cone-shaped body adapted with described card lobe installation cavity (3) shape, and described graphite clamping petal (2) is clamped in described card lobe installation cavity (3) by lower taper body; Described graphite clamping petal (2) center is provided with silicon core installation cavity (4).
3. polycrystalline silicon reducing furnace graphite components as claimed in claim 2, is characterized in that: described silicon core installation cavity (4) is square, cylindrical, conical or prismatic.
4. the polycrystalline silicon reducing furnace graphite components as described in any one of claim 1-3, is characterized in that: described graphite clamping petal (2) is made up of more than two lobes or two lobes multiple lobe that forms.
5. polycrystalline silicon reducing furnace graphite components as claimed in claim 2 or claim 3, is characterized in that: described silicon core installation cavity (4) is evenly provided with multiple expansion slot (5) around.
6. polycrystalline silicon reducing furnace graphite components as claimed in claim 2 or claim 3, is characterized in that: described card lobe installation cavity (3) is the conical cavity of circular cone or Polygons cone.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520088882.1U CN204454607U (en) | 2015-02-06 | 2015-02-06 | A kind of polycrystalline silicon reducing furnace graphite components |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520088882.1U CN204454607U (en) | 2015-02-06 | 2015-02-06 | A kind of polycrystalline silicon reducing furnace graphite components |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN204454607U true CN204454607U (en) | 2015-07-08 |
Family
ID=53661522
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201520088882.1U Active CN204454607U (en) | 2015-02-06 | 2015-02-06 | A kind of polycrystalline silicon reducing furnace graphite components |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN204454607U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104671246A (en) * | 2015-02-06 | 2015-06-03 | 无锡中硅新材料股份有限公司 | Graphite assembly for polycrystalline silicon reducing furnace |
-
2015
- 2015-02-06 CN CN201520088882.1U patent/CN204454607U/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104671246A (en) * | 2015-02-06 | 2015-06-03 | 无锡中硅新材料股份有限公司 | Graphite assembly for polycrystalline silicon reducing furnace |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN204400626U (en) | A kind of polycrystalline silicon reducing furnace graphite components with block | |
| CN204454607U (en) | A kind of polycrystalline silicon reducing furnace graphite components | |
| CN104671246A (en) | Graphite assembly for polycrystalline silicon reducing furnace | |
| CN105271242A (en) | Graphite shield of graphite assembly for polycrystalline silicon reduction furnace | |
| CN204417140U (en) | A kind of polycrystalline silicon reducing furnace graphite clamping petal | |
| CN202539986U (en) | Fixture used in drilling of bar stock | |
| CN205313108U (en) | A graphite guard shield for graphite subassembly for polycrystalline silicon reduction furnace | |
| CN204981167U (en) | Graphite base for polycrystalline silicon reduction furnace with exhausting function | |
| CN204981166U (en) | A mounting tool for graphite subassembly for polycrystalline silicon reduction furnace | |
| CN203622279U (en) | Assembly tool for realizing coaxial clamping of two parts | |
| CN207642642U (en) | A kind of auto parts manufacture rapid installation device | |
| CN202498146U (en) | One-shot forming press mounting die for automobile combination bush | |
| CN202253429U (en) | Connecting structure for LED lamp | |
| CN202889127U (en) | Motor assembly device | |
| CN201433987Y (en) | Positioning screw | |
| CN205127867U (en) | Leaf structure is changed to agitator | |
| CN202656058U (en) | Flatting device of chip-mounting suction nozzle of transistor | |
| CN204407540U (en) | The integral structure of nut and terminal | |
| CN216226186U (en) | Die sleeve capable of being switched to use same wire drawing die | |
| CN204076001U (en) | A kind of workpiece fixture | |
| CN204156789U (en) | A kind of solar photovoltaic cell panel | |
| CN209550813U (en) | A kind of high efficiency screw thread tool of production | |
| CN208401205U (en) | A kind of N Connector suitable for power splitter | |
| CN204981162U (en) | Graphite card flap with alignment function is used for polycrystalline silicon reduction furnace | |
| CN211120827U (en) | Novel heat exchanger |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20231212 Address after: 214000 Huayuan Village, Luoshe Town, Huishan District, Wuxi City, Jiangsu Province Patentee after: Wuxi Lingying Electromechanical Co.,Ltd. Address before: No. 3 Xixing North Road, New District, Wuxi City, Jiangsu Province, 214000 Patentee before: SINO-SI ADVANCED MATERIAL WUXI Co.,Ltd. |