CN205303304U - 真空断路器的固封极柱缓冲绝缘层结构 - Google Patents
真空断路器的固封极柱缓冲绝缘层结构 Download PDFInfo
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Address after: 200444 212H room, No. 668, Da Dao, Baoshan District, Shanghai Patentee after: YICHENG NEW MATERIAL TECHNOLOGY (SHANGHAI) CO., LTD. Patentee after: New material Science and Technology Ltd. is come in upper Haicheng Patentee after: Tao Sheng Tianhe (Shanghai) materials science and technology limited company Address before: 200444 212H room, No. 668, Da Dao, Baoshan District, Shanghai Patentee before: YICHENG NEW MATERIAL TECHNOLOGY (SHANGHAI) CO., LTD. Patentee before: SHANGHAI CHENGLAI NEW MATERIALS CO., LTD. Patentee before: Tao Sheng Tianhe (Shanghai) materials science and technology limited company |
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CP01 | Change in the name or title of a patent holder |
Address after: 200444 212H room, No. 668, Da Dao, Baoshan District, Shanghai Co-patentee after: SHANGHAI CHENGLAI NEW MATERIAL TECHNOLOGY Co.,Ltd. Patentee after: YICHENG NEW MATERIAL TECHNOLOGY (SHANGHAI) Co.,Ltd. Co-patentee after: Daosheng Tianhe material technology (Shanghai) Co., Ltd Address before: 200444 212H room, No. 668, Da Dao, Baoshan District, Shanghai Co-patentee before: SHANGHAI CHENGLAI NEW MATERIAL TECHNOLOGY Co.,Ltd. Patentee before: YICHENG NEW MATERIAL TECHNOLOGY (SHANGHAI) Co.,Ltd. Co-patentee before: TECHSTORM ADVANCED MATERIAL Co.,Ltd. |
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