CN205283813U - MEMS microphone chip and MEMS microphone - Google Patents
MEMS microphone chip and MEMS microphone Download PDFInfo
- Publication number
- CN205283813U CN205283813U CN201520978378.9U CN201520978378U CN205283813U CN 205283813 U CN205283813 U CN 205283813U CN 201520978378 U CN201520978378 U CN 201520978378U CN 205283813 U CN205283813 U CN 205283813U
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- layer
- backplane
- mems microphone
- utmost point
- vibrating diaphragm
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- 239000004020 conductor Substances 0.000 claims abstract description 58
- 210000000438 stratum basale Anatomy 0.000 claims abstract description 15
- 238000009413 insulation Methods 0.000 claims description 62
- 239000000463 material Substances 0.000 claims description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 3
- 229910045601 alloy Inorganic materials 0.000 claims description 3
- 239000000956 alloy Substances 0.000 claims description 3
- 239000004411 aluminium Substances 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 239000010949 copper Substances 0.000 claims description 3
- QRJOYPHTNNOAOJ-UHFFFAOYSA-N copper gold Chemical compound [Cu].[Au] QRJOYPHTNNOAOJ-UHFFFAOYSA-N 0.000 claims description 3
- 229910001254 electrum Inorganic materials 0.000 claims description 3
- XXOYNJXVWVNOOJ-UHFFFAOYSA-N fenuron Chemical compound CN(C)C(=O)NC1=CC=CC=C1 XXOYNJXVWVNOOJ-UHFFFAOYSA-N 0.000 claims description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- 239000010931 gold Substances 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 3
- 229920005591 polysilicon Polymers 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 239000004332 silver Substances 0.000 claims description 3
- 229910001097 yellow gold Inorganic materials 0.000 claims description 3
- 239000010930 yellow gold Substances 0.000 claims description 3
- 238000002955 isolation Methods 0.000 claims 2
- 230000035945 sensitivity Effects 0.000 abstract description 12
- 238000000926 separation method Methods 0.000 abstract description 3
- 238000004519 manufacturing process Methods 0.000 abstract description 2
- 230000002889 sympathetic effect Effects 0.000 abstract 3
- 239000012528 membrane Substances 0.000 abstract 1
- 230000003071 parasitic effect Effects 0.000 abstract 1
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 238000005303 weighing Methods 0.000 description 1
Abstract
The application discloses MEMS microphone chip, including stratum basale, back of the body utmost point layer sympathetic vibration rete, back of the body utmost point layer is including insulating back of the body utmost point layer and conductor back of the body utmost point layer, and conductor back of the body utmost point level is between the sympathetic vibration rete of insulating back of the body utmost point layer, and the insulating back of the body utmost point is provided with on ceng and passes conductor back of the body utmost point layer and stretch out a plurality of insulating bellying on directional vibrating diaphragm layer, and conductor back of the body utmost point level is in the out -of -the -way polar region on back of the body utmost point layer. In this MEMS microphone chip, the conductor back of the body utmost point level on back of the body utmost point layer is between the sympathetic vibration rete of insulating back of the body utmost point layer, and be located out -of -the -way polar region, utmost point layer can only be carried on the back for the conductor with the part of vibrating diaphragm layer production electric capacity in back of the body utmost point layer, and the electric capacity that produces is effective capacitance, and insulating back of the body utmost point layer does not produce electric capacity with the vibrating diaphragm layer, reduces the parasitic capacitance, the sensitivity of MEMS microphone chip has improved, insulating bellying separation simultaneously the contact of vibrating diaphragm layer and the conductor back of the body utmost point layer, prevent the short circuit and inhale the membrane. This application still discloses a MEMS microphone that contains this MEMS microphone chip.
Description
Technical field
The utility model relates to technical field of electronic devices, in particular to a kind of MEMES microphone chip. Also relate to a kind of MEMS microphone comprising this MEMS microphone chip.
Background technology
Micro Electro Mechanical System (Micro-Electro-MechanicalSystem, MEMS) microphone is the microphone manufactured based on MEMS technology, owing to it has, encapsulation volume is little, reliability height, low cost and other advantages, it is widely used in various voice equipment, the electronic products such as such as mobile phone, panel computer, PDA, audiomonitor.
MEMS microphone chip is the key part of MEMS microphone, MEMS microphone chip is needed to be formed by stacking according to particular design by stratum basale, vibrating diaphragm layer, insulation layer and backplane layer usually, existing a kind of MEMS microphone chip structure is: be followed successively by stratum basale, vibrating diaphragm layer and backplane layer from the bottom to top, stratum basale is provided with the operatic tunes, the position being covered in the operatic tunes on vibrating diaphragm floor is that vibrating diaphragm effectively vibrates district, the position covering the operatic tunes on backplane floor is backplane district, and backplane district is provided with some acoustic aperture. Backplane layer is single-conductor structure, arrange with vibrating diaphragm layer stackup and form parallel plate capacitor to feel survey sound, chip integral capacitor value comprises effective capacitance and stray capacitance two portions, effective capacitance is formed by effective vibration district of the backplane district of backplane floor and vibrating diaphragm floor, the capacitance of effective capacitance can change along with the vibration change of vibrating diaphragm layer, stray capacitance is formed by the invalid vibration district in the non-backplane district of backplane floor and vibrating diaphragm floor, the capacitance of stray capacitance can not vibrating diaphragm layer vibration change and change. Stray capacitance can affect sensitivity and the signal to noise ratio of MEMS microphone, and the size of sensitivity is one of important factor weighing a MEMS microphone chip performance, and the calculation formula of sensitivity is:Wherein, S is sensitivity, VbFor bias voltage (biasvoltage), �� p is for measuring acoustic pressure, and d is clearance (AirGap), and �� d is by vibrating diaphragm deformation quantity under �� p acoustic pressure, C0The capacitance arrived for measuring, CpFor stray capacitance, thus, it can be seen that, when stray capacitance increases, sensitivity S reduces, and therefore can reduce its stray capacitance when designing MEMS microphone chip as far as possible. And backplane layer easily meets accident to contact with vibrating diaphragm layer and causes short circuit.
In sum, how to reduce the size of the stray capacitance of MEMS microphone chip, avoid backplane layer and vibrating diaphragm layer to come in contact short circuit, become the technical problem that those skilled in the art are urgently to be resolved hurrily.
Practical novel content
In view of this, the purpose of this utility model is to provide a kind of MEMS microphone chip, to reduce the stray capacitance of MEMS microphone chip, avoids backplane layer and vibrating diaphragm layer to come in contact short circuit.
Another object of the present utility model is to provide a kind of MEMS microphone comprising this MEMS microphone chip, to improve its sensitivity.
For achieving the above object, the utility model provides following technical scheme:
A kind of MEMS microphone chip, comprise stratum basale, backplane layer and vibrating diaphragm layer, it is characterized in that, described backplane layer comprises insulation backplane layer and conductor backplane layer, described conductor backplane layer is between described insulation backplane layer and described vibrating diaphragm layer, and described insulation backplane layer is provided through described conductor backplane layer and stretches out the some insulation lug bosses pointing to described vibrating diaphragm layer, described conductor backplane floor is positioned at the backplane district of described backplane floor.
Preferably, in above-mentioned MEMS microphone chip, described conductor backplane layer embed described insulation backplane layer towards in the surface, side of described vibrating diaphragm layer, and the side flush towards described vibrating diaphragm layer of the surface, the side towards described vibrating diaphragm layer of described conductor backplane layer and described insulation backplane layer.
Preferably, in above-mentioned MEMS microphone chip, the end of described insulation lug boss is plane, the conical surface or arc.
Preferably, in above-mentioned MEMS microphone chip, by the first insulator separation between the edge of described backplane layer and described vibrating diaphragm layer, described backplane layer is fixed by edge and described first insulation layer of described insulation backplane layer.
Preferably, in above-mentioned MEMS microphone chip, the material of described conductor backplane layer is polysilicon, copper, aluminium, silver, gold, X alloy, yellow gold, gold copper, aerdentalloy or electrum.
Preferably, in above-mentioned MEMS microphone chip, by the 2nd insulator separation between the edge of described stratum basale and described vibrating diaphragm layer.
The utility model additionally provides a kind of MEMS microphone, comprises MEMS microphone chip, and described MEMS microphone chip is the MEMS microphone chip described in above arbitrary item.
Compared with prior art, the beneficial effects of the utility model are:
In the MEMS microphone chip that the utility model provides, backplane layer comprises insulation backplane layer and conductor backplane layer, conductor backplane layer is between insulation backplane layer and vibrating diaphragm layer, conductor backplane floor is positioned at the backplane district of backplane floor, insulation backplane layer is provided through conductor backplane layer and points to the insulation lug boss of vibrating diaphragm layer. Visible, backplane floor can be only, with the part of vibrating diaphragm floor generation electric capacity, the conductor backplane floor being positioned at backplane district, and the operatic tunes of the corresponding stratum basale in backplane district, and the operatic tunes of effective vibration district of vibrating diaphragm floor also corresponding stratum basale, therefore, effective vibration district of the corresponding vibrating diaphragm floor of conductor backplane floor, the electric capacity produced is effective capacitance, and the insulation backplane layer of backplane layer does not produce electric capacity with vibrating diaphragm layer, thus reduce stray capacitance, it is to increase the sensitivity of MEMS microphone chip. Meanwhile, insulation lug boss through conductor backplane layer and points to vibrating diaphragm layer, avoids vibrating diaphragm layer and contacts or adhesion with conductor backplane layer, prevent short circuit, and ensure that vibrating diaphragm layer vibrates normally.
The MEMS microphone that the utility model provides have employed the MEMS microphone chip in the utility model, therefore, has higher sensitivity, ensures normal operation.
Accompanying drawing explanation
In order to be illustrated more clearly in the utility model embodiment or technical scheme of the prior art, it is briefly described to the accompanying drawing used required in embodiment or description of the prior art below, apparently, accompanying drawing in the following describes is only embodiment of the present utility model, for those of ordinary skill in the art, under the prerequisite not paying creative work, it is also possible to obtain other accompanying drawing according to the accompanying drawing provided.
The schematic cross-section of a kind of MEMS microphone chip that Fig. 1 the utility model embodiment provides.
In FIG, 1 be backplane layer, 11 be insulation backplane layer, 12 conductor backplane layers, 13 be acoustic aperture, 14 be stratum basale for lug boss, 2 is the first insulation layer, 3 for vibrating diaphragm layer, 4 is the 2nd insulation layer, 5,501 for the operatic tunes.
Embodiment
Core of the present utility model there is provided a kind of MEMS microphone chip, reduce its stray capacitance, it is to increase sensitivity, avoids backplane layer and vibrating diaphragm layer comes in contact short circuit.
The utility model additionally provides a kind of microphone comprising this MEMS microphone chip, it is to increase sensitivity, ensure that normal operation.
Below in conjunction with the accompanying drawing in the utility model embodiment, the technical scheme in the utility model embodiment is clearly and completely described, it is clear that described embodiment is only the utility model part embodiment, instead of whole embodiments. Based on the embodiment in the utility model, those of ordinary skill in the art are not making other embodiments all obtained under creative work prerequisite, all belong to the scope of the utility model protection.
Please refer to shown in Fig. 1, the utility model embodiment provides a kind of MEMS microphone chip, comprises stratum basale 5, backplane layer 1, vibrating diaphragm layer 3 and the first insulation layer 2, is followed successively by stratum basale 5, vibrating diaphragm layer 3, first insulation layer 2 and backplane layer 1 from the bottom to top; Stratum basale 5 is provided with the through operatic tunes of upper and lower surface 501, the position being covered in the operatic tunes 501 on vibrating diaphragm floor 3 is for effectively vibrating district, first insulation layer 2 is offered the through through hole of upper and lower surface, this through hole is corresponding with the operatic tunes about 501, the position being covered in the operatic tunes 501 on backplane floor 1 is backplane district, offered some acoustic aperture 13 in backplane district, backplane district is corresponding up and down with effectively vibration district. Backplane layer 1 comprises superimposed fixing insulation backplane layer 11 and conductor backplane layer 12, conductor backplane layer 12 is between insulation backplane layer 11 and vibrating diaphragm layer 3, and conductor backplane floor 12 is positioned at the backplane district of backplane floor 1, namely the projection of conductor backplane floor 12 on vibrating diaphragm floor 3 is positioned at effectively vibration district, insulation backplane layer 11 is provided through conductor backplane layer 12 and stretches out the some insulation lug bosses 14 pointing to vibrating diaphragm layer 3, insulation lug boss 14 is structure as a whole with insulation backplane layer 11, and backplane layer 1 is fixed on the first insulation layer 2 by insulation backplane layer 11.
Above-mentioned MEMS microphone chip is operationally, owing to backplane layer 1 only has conductor backplane layer 12 to be conductor, only conductor backplane layer 12 can produce electric capacity with vibrating diaphragm layer 3, and owing to conductor backplane floor 12 is positioned at backplane district, backplane district is corresponding up and down with effective vibration district of vibrating diaphragm floor 3 again, therefore, conductor backplane floor 12 produces electric capacity with effective vibration district of vibrating diaphragm floor 3, and this electric capacity is effective capacitance. And the insulation backplane layer 11 of backplane layer 1 is isolator, electric capacity can not be produced with vibrating diaphragm layer 3, thus reduce stray capacitance. Insulation backplane layer 11 not only plays the effect of fixed conductor backplane layer 12, and the insulation lug boss 14 insulated on backplane layer 11 penetrates and stretches out conductor backplane layer 12, exceed the lower surface of conductor backplane layer 12, insulation lug boss 14 can avoid vibrating diaphragm layer 3 to contact with conductor backplane layer 12, cause short circuit, vibrating diaphragm layer 3 to inhale the unfavorable conditions such as film, ensure that vibrating diaphragm layer 3 normal vibration.
As shown in Figure 1, present embodiments provide a kind of concrete backplane layer 1 structure, conductor backplane layer 12 embed insulation backplane layer 11 towards in the surface, side of vibrating diaphragm layer 3, and the side flush towards vibrating diaphragm layer 3 of the surface, the side towards vibrating diaphragm layer 3 of conductor backplane layer 12 and insulation backplane layer 11. Convenient processing.
Further, in the present embodiment, the end of insulation lug boss 14 is plane, the conical surface or arc. Size size according to chip determines size and the arrangement density of lug boss 14, as long as vibrating diaphragm layer 3 can be stoped to contact with conductor backplane layer 12.
In the present embodiment, the material of conductor backplane layer 12 is polysilicon, copper, aluminium, silver, gold, X alloy, yellow gold, gold copper, aerdentalloy or electrum. As long as being conductive material, it is not limited to the material cited by the present embodiment.
As shown in Figure 1, in the present embodiment, being isolated by the 2nd insulation layer 4 between the edge of stratum basale 5 and vibrating diaphragm layer 3, the through hole of through upper and lower surface is offered at the position that the 2nd insulation layer 4 is covered in the operatic tunes 501.
The utility model embodiment still provides a kind of MEMS microphone, comprises MEMS microphone chip, and wherein, MEMS microphone chip is the MEMS microphone chip described by above whole embodiment. Owing to have employed above-mentioned MEMS microphone chip, therefore improve the sensitivity of MEMS microphone.
The manufacture craft process of the backplane layer 1 of the MEMS microphone chip in the utility model is:
The first step: deposited conductor backplane layer 12 on the first insulation layer 2;
2nd step: photoetching conductor backplane layer 12, only retain the conductor backplane floor 12 in the backplane district being positioned at backplane floor 1, and on the conductor backplane layer 12 remained, make some through holes (for the formation of insulation lug boss 14) by lithography, and in through hole, etch away part first insulation layer 2 simultaneously, the first insulation layer 2 etches pit (for the formation of insulation lug boss 14);
3rd step: deposition insulation backplane layer 11 on the surface of conductor backplane layer 12 retained and the surface of the first insulation layer 2, the through hole of insulation backplane layer 11 on conductor backplane layer 12 enters and forms insulation lug boss 14 in the pit on the first insulation layer 2;
4th step: photoetching insulation backplane layer 11 and conductor backplane layer 12 obtain running through the acoustic aperture 13 of backplane layer 1, complete the making of backplane layer 1.
Finally by acoustic aperture 13, the first insulation layer 2 below conductor backplane layer 1 is etched away, obtain clearance.
In this specification sheets, each embodiment adopts the mode gone forward one by one to describe, and what each embodiment emphasis illustrated is the difference with other embodiments, between each embodiment identical similar portion mutually see.
To the above-mentioned explanation of the disclosed embodiments, professional and technical personnel in the field are enable to realize or use the utility model. To be apparent for those skilled in the art to the multiple amendment of these embodiments, General Principle as defined herein when not departing from spirit or scope of the present utility model, can realize in other embodiments. Therefore, the utility model can not be limited in these embodiments shown in this article, but be met the widest scope consistent with principle disclosed herein and features of novelty.
Claims (7)
1. a MEMS microphone chip, comprise stratum basale (5), backplane layer (1) and vibrating diaphragm layer (3), it is characterized in that, described backplane layer (1) comprises insulation backplane layer (11) and conductor backplane layer (12), described conductor backplane layer (12) is positioned between described insulation backplane layer (11) and described vibrating diaphragm layer (3), and described insulation backplane layer (11) is provided through described conductor backplane layer (12) and stretches out the some insulation lug bosses (14) pointing to described vibrating diaphragm layer (3), described conductor backplane floor (12) is positioned at the backplane district of described backplane floor (1).
2. MEMS microphone chip according to claim 1, it is characterized in that, described conductor backplane layer (12) embed described insulation backplane layer (11) towards in the surface, side of described vibrating diaphragm layer (3), and the side flush towards described vibrating diaphragm layer (3) of the surface, the side towards described vibrating diaphragm layer (3) of described conductor backplane layer (12) and described insulation backplane layer (11).
3. MEMS microphone chip according to claim 1, it is characterised in that, the end of described insulation lug boss (14) is plane, the conical surface or arc.
4. MEMS microphone chip according to claim 1, it is characterized in that, by the first insulation layer (2) isolation between described backplane layer (1) and the edge of described vibrating diaphragm layer (3), described backplane layer (1) is fixed by the edge of described insulation backplane layer (11) and described first insulation layer (2).
5. MEMS microphone chip according to claim 1, it is characterised in that, the material of described conductor backplane layer (12) is polysilicon, copper, aluminium, silver, gold, X alloy, yellow gold, gold copper, aerdentalloy or electrum.
6. MEMS microphone chip according to claim 1, it is characterised in that, by the 2nd insulation layer (4) isolation between the edge of described stratum basale (5) and described vibrating diaphragm layer (3).
7. a MEMS microphone, comprises MEMS microphone chip, it is characterised in that, described MEMS microphone chip is the MEMS microphone chip as described in item as arbitrary in claim 1-6.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520978378.9U CN205283813U (en) | 2015-11-30 | 2015-11-30 | MEMS microphone chip and MEMS microphone |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520978378.9U CN205283813U (en) | 2015-11-30 | 2015-11-30 | MEMS microphone chip and MEMS microphone |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN205283813U true CN205283813U (en) | 2016-06-01 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201520978378.9U Active CN205283813U (en) | 2015-11-30 | 2015-11-30 | MEMS microphone chip and MEMS microphone |
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| Country | Link |
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| CN (1) | CN205283813U (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112492486A (en) * | 2020-12-03 | 2021-03-12 | 青岛歌尔智能传感器有限公司 | Microphone chip, MEMS microphone and electronic device |
| CN112492490A (en) * | 2020-12-22 | 2021-03-12 | 苏州敏芯微电子技术股份有限公司 | Manufacturing method of MEMS device and MEMS microphone |
| CN113678472A (en) * | 2019-05-31 | 2021-11-19 | 共达电声股份有限公司 | MEMS capacitive sensor, preparation method thereof and electronic equipment |
| WO2022135004A1 (en) * | 2020-12-25 | 2022-06-30 | 歌尔微电子股份有限公司 | Capacitive sensor chip, sensor, and electronic device |
| CN113678472B (en) * | 2019-05-31 | 2024-04-12 | 共达电声股份有限公司 | MEMS capacitive sensor, manufacturing method thereof and electronic equipment |
-
2015
- 2015-11-30 CN CN201520978378.9U patent/CN205283813U/en active Active
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113678472A (en) * | 2019-05-31 | 2021-11-19 | 共达电声股份有限公司 | MEMS capacitive sensor, preparation method thereof and electronic equipment |
| CN113678472B (en) * | 2019-05-31 | 2024-04-12 | 共达电声股份有限公司 | MEMS capacitive sensor, manufacturing method thereof and electronic equipment |
| CN112492486A (en) * | 2020-12-03 | 2021-03-12 | 青岛歌尔智能传感器有限公司 | Microphone chip, MEMS microphone and electronic device |
| CN112492486B (en) * | 2020-12-03 | 2022-03-25 | 青岛歌尔智能传感器有限公司 | Microphone chip, MEMS microphone and electronic device |
| CN112492490A (en) * | 2020-12-22 | 2021-03-12 | 苏州敏芯微电子技术股份有限公司 | Manufacturing method of MEMS device and MEMS microphone |
| WO2022135004A1 (en) * | 2020-12-25 | 2022-06-30 | 歌尔微电子股份有限公司 | Capacitive sensor chip, sensor, and electronic device |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C56 | Change in the name or address of the patentee | ||
| CP01 | Change in the name or title of a patent holder |
Address after: 261031 Dongfang Road, Weifang high tech Industrial Development Zone, Shandong, China, No. 268 Patentee after: Goertek Inc. Address before: 261031 Dongfang Road, Weifang high tech Industrial Development Zone, Shandong, China, No. 268 Patentee before: Goertek Inc. |
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| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20191113 Address after: 266104 room 103, 396 Songling Road, Laoshan District, Qingdao, Shandong Province Patentee after: Goer Microelectronics Co., Ltd Address before: 261031 Dongfang Road, Weifang high tech Industrial Development Zone, Shandong, China, No. 268 Patentee before: Gore Co., Ltd. |