CN205231059U - Electrostatic protection circuit and diode trigger hold gthyristor thereof - Google Patents
Electrostatic protection circuit and diode trigger hold gthyristor thereof Download PDFInfo
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- CN205231059U CN205231059U CN201521117093.2U CN201521117093U CN205231059U CN 205231059 U CN205231059 U CN 205231059U CN 201521117093 U CN201521117093 U CN 201521117093U CN 205231059 U CN205231059 U CN 205231059U
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Abstract
The utility model relates to an electrostatic protection circuit and diode trigger hold gthyristor thereof. Gthyristor has the anode tap and the cathode terminal is just gone here and there and second diode cluster including first triode, second triode, first resistance, second resistance, diode, first diode. Gthyristor's anode tap is connected to the positive pole of first diode cluster, and the projecting pole of first triode is connected to the negative pole. First resistance and diode are connected between the projecting pole and base of first triode, and the base of first triode is connected to the collecting electrode of second triode, and the collecting electrode of first triode is connected to the base of second triode, and gthyristor's cathode terminal is connected to the projecting pole of second triode. The base of second ohmic connection second triode and gthyristor's cathode terminal, the base of first triode is connected to the positive pole of second diode cluster, and gthyristor's cathode terminal is connected to the negative pole of second diode cluster.
Description
Technical field
The utility model relates to electrostatic defending, especially relates to a kind of electrostatic discharge protection circuit and diode triggered maintenance silicon controlled rectifier thereof.
Background technology
Along with semiconductor processing dimensions constantly reduce and in the face of day by day complicated applied environment, it is increasing that integrated circuit (IC) is subject to the threat that static discharge (ESD) damages.The transient current of static discharge process can reach several amperes and even tens of ampere, if if having corresponding ESD safeguard procedures or protection deficiency, be easy to the eventual failure or the latent failure that cause chip.For automotive electronics, this may take life as cost.According to data statistics, the IC of 37% lost efficacy because ESD causes, and caused the loss caused semi-conductor industry in multi-million dollar every year.Therefore on the sheet improving IC, the reliability of antistatic capacity to chip has great meaning.
It is when esd event is interim that ESD protective device acts in circuit, the rapid conducting of device to form a low-resistance discharge path to ESD electric current of releasing, simultaneously by the voltage clamp on device a lower level, to avoid puncturing inside chip.And when esd event disappears, this device is closed rapidly, be in a high resistance area, to avoid.Internal circuit is impacted.
The current-voltage curve of typical case's ESD device as shown in Figure 1.When chip normally works, ESD device is in closed condition, and now its equivalent state is equivalent to open circuit; After the voltage in ESD device increases to Vt1 gradually, it starts conducting, and along with the increase of electric current, voltage starts to reduce (being called rollback effect, Snapback); After voltage reaches maintenance voltage Vh, voltage starts slow rising, and electric current increases sharply, and now device is in region of discharge; When electric current continue to increase finally cause device second breakdown due to thermal effect time, device is by permanent failure.Electric current I t2 is now called secondary breakdown current, is the mark of ESD device protective capacities.In the design process of ESD device, Vt1, Vh and It2 are some important parameters.First will according to the requirement determination design window of acp chip, as shown in Figure 1.Vt1 must be less than the puncture voltage BV of chip, and BV here comprises gate breakdown voltage BVGS and drain breakdown voltage BVDS; Simultaneously in order to avoid latch-up, Vh must be greater than supply voltage VDD.ESD design window is herein decided to be [3.3V, 9V].
Due to the high efficiency ESD barrier propterty of silicon controlled rectifier (SiliconControlledRectifier, SCR), it is widely adopted in ESD protection.But due to the inherent shortcoming of common SCR device characteristic, the ESD protection causing it can not be directly used in automotive electronics.
As shown in Figure 2, between anode A node and negative electrode Cathode, form the four-layer structure of a P+/NW/PW/N+, wherein NW is N trap to SCR structure in CMOS technology, and PW is P trap, and P+ is P doped region, and N+ is N doped region.This four-layer structure constitutes two parasitic triodes, and its equivalent electric circuit as shown in Figure 3.Just because of the regenerative feedback loop that these two parasitic triodes are formed, just make it have high current gain, for the forward esd pulse from anode to negative electrode provides protection.
When anode occurring sufficiently high esd pulse, the PN junction that NW/PW is formed is reversed and punctures, generation current, when the ohmically magnitude of voltage of N trap is greater than the conducting voltage 0.7V of P+/NW knot, and parasitic PNP pipe conducting.Along with the increase of electric current, the voltage between PW and N+ (Kn end) increases gradually, and when it reaches the forward conduction voltage 0.7V of PW/N+ knot, parasitic NPN manages now also conducting, and two triodes form a regenerative feedback loop, and SCR structure is opened.Now, anode voltage declines from trigger voltage Vt1, enters a backtracking stage, after this negative differential resistance region, anode voltage reaches and keeps voltage Vh, and SCR enters stable region of discharge thus, thus effective release ESD electric current, until device is secondary breakdown because of thermal effect.
But the puncture voltage that the puncture voltage of SCR is herein the PN junction be made up of NW/PW determines, in 0.35umBCD technique, the puncture voltage of NW/PW knot is up to 40V, and not obviously being suitable for puncture voltage is in the inside chip of 9V.Adopt the SCR of NMOS triggering and substrate triggering SCR also the Vt1 of SCR can only be dropped to about 10V even if employing covers one deck N+ on NW/PW, its device parameters is also not easy to adjustment, is difficult to satisfied application requirement.
Propose the trigger voltage that a kind of diode triggered controllable silicon (DtSCR) reduces SCR, can triggering as early as possible, but two triodes due to parasitism form regenerative feedback loop, Vh still can only maintain between 1V ~ 2V, can cause latch-up equally.
Utility model content
Technical problem to be solved in the utility model is to provide a kind of diode triggered for electrostatic defending and keeps silicon controlled rectifier, can realize the controllability of trigger voltage and maintenance voltage in the lump.
The utility model also proposes a kind of diode triggered that uses and keeps silicon controlled electrostatic discharge protection circuit.
The utility model is that to solve the problems of the technologies described above the technical scheme adopted be propose a kind of diode triggered for electrostatic defending to keep silicon controlled rectifier, there is anode tap and cathode terminal and comprise the first triode, second triode, first resistance, second resistance, diode, first diode string and the second diode string, the anode of this first diode string connects the anode tap of this diode triggered maintenance silicon controlled rectifier, the negative electrode of this first diode string connects the emitter of this first triode, between the emitter that this first resistance and this diode are connected to this first triode and base stage, the collector electrode of this second triode connects the base stage of this first triode, the base stage of this second triode connects the collector electrode of this first triode, the emitter of this second triode connects the cathode terminal of this diode triggered maintenance silicon controlled rectifier, this second resistance connects the base stage of this second triode and the cathode terminal of this diode triggered maintenance silicon controlled rectifier, the anode of this second diode string connects the base stage of this first triode, the negative electrode of this second diode string connects the cathode terminal of this diode triggered maintenance silicon controlled rectifier.
In an embodiment of the present utility model, this diode triggered keeps the trigger voltage of silicon controlled rectifier and keeps voltage all to increase with the number of diodes increase of this first diode string.
In an embodiment of the present utility model, this diode triggered keeps the trigger voltage of silicon controlled rectifier to increase with the number of diodes increase of this second diode string.
In an embodiment of the present utility model, this first triode, the second triode, the first resistance, the second resistance, diode composition silicon controlled equivalent electric circuit, wherein this diode is the parasitic diode of this silicon controlled anode two-port.
A kind of electrostatic discharge protection circuit that the utility model proposes, comprises diode triggered as above and keeps silicon controlled rectifier, and this diode triggered keeps silicon controlled rectifier to be connected between two voltage ends.
In an embodiment of the present utility model, electrostatic discharge protection circuit also comprises diode, is connected between input/output end port and this voltage end.
The utility model, owing to adopting above technical scheme, makes it compared with prior art, by adding diode string in silicon controlled rectifier, making trigger voltage and keeping voltage all can regulate, thus providing high efficiency ESD to protect.
Accompanying drawing explanation
For above-mentioned purpose of the present utility model, feature and advantage can be become apparent, below in conjunction with accompanying drawing, embodiment of the present utility model is elaborated, wherein:
Fig. 1 is the current-voltage rollback curve of typical ESD protective device.
Fig. 2 is the profile of known silicon controlled rectifier.
Fig. 3 is the equivalent circuit diagram of silicon controlled rectifier shown in Fig. 2.
Fig. 4 is the equivalent circuit diagram of the diode triggered maintenance silicon controlled rectifier of the utility model one embodiment.
Fig. 5 is in circuit shown in Fig. 4, and the number of diodes of the first diode string affects schematic diagram to silicon controlled rectifier DC characteristic.
Fig. 6 is in circuit shown in Fig. 4, and the number of diodes of the second diode string affects schematic diagram to silicon controlled rectifier DC characteristic.
Fig. 7 is in circuit shown in Fig. 4, and the number of diodes of the first diode string and the second diode string is the direct current simulation result of 2.
Fig. 8 is in circuit shown in Fig. 4, and the number of diodes of the first diode string and the second diode string is the Transient result of 2.
Fig. 9 is the basic structure of the full chip electrostatic protection circuit of the utility model one embodiment.
Figure 10 is the electrostatic protection device network of the utility model one embodiment.
Figure 11 is two kinds of worst static discharge Transient results.
Embodiment
Embodiment of the present utility model describes the silicon controlled rectifier being used for electrostatic defending (ESD).In order to overcome traditional silicon controlled inherent shortcoming, realizing adjustable trigger voltage and maintenance, providing high efficiency ESD to protect simultaneously, embodiment of the present utility model describes a kind of diode triggered and keeps silicon controlled rectifier.
Fig. 4 is the equivalent circuit diagram of the diode triggered maintenance silicon controlled rectifier of the utility model one embodiment.Shown in figure 4, the diode triggered of the present embodiment keeps silicon controlled rectifier 40 the same with known silicon controlled rectifier, has anode tap Anode and cathode terminal Cathode.Silicon controlled rectifier 40 comprises the first triode Q1, the second triode Q2, the first resistance RNW, the second resistance RPW, diode Di, the first diode string (DiodeString) DS1 and the second diode string DS2.The anode of the first diode string DS1 connects the anode tap Anode of silicon controlled rectifier 40, and the negative electrode of the first diode string DS1 then connects the emitter of the first triode Q1.Between the emitter that first resistance RNW and diode Di is connected to the first triode Q1 and base stage, the collector electrode of the second triode Q2 connects the base stage of the first triode.The base stage of the second triode Q2 connects the collector electrode of the first triode, and the emitter of the second triode connects the cathode terminal of silicon controlled rectifier 40.Second resistance RPW connects the base stage of the second triode and the cathode terminal Cathode of silicon controlled rectifier 40.The anode of the second diode string DS2 connects the base stage of the first triode Q1, and the negative electrode of the second diode string DS2 connects the cathode terminal Cathode of silicon controlled rectifier 40.
Comparison diagram 4 and Fig. 2, the present embodiment increases by two diode strings on traditional silicon controlled rectifier, forms diode triggered and keep silicon controlled rectifier.Traditional silicon controlled rectifier 42 is gone out with dotted line frame in Fig. 4.This diode triggered keeps silicon controlled rectifier when as ESD device, there are two discharge paths, and a path being exactly two diode strings DS1, DS2 and forming, another is exactly the path that diode string DS1 and silicon controlled rectifier 42 are formed.When the anode A node of silicon controlled rectifier 40 occurs that esd event needs forward to discharge, before anode voltage reaches trigger voltage, exceed supply voltage along with the voltage on anode A node and increase gradually, diode string DS1, DS2 start forward conduction, and occur electric current.Be increased to certain value (as It1), silicon controlled rectifier 42 conducting along with electric current, anode voltage reduces, and silicon controlled rectifier 42 enters rollback district (also claiming negative differential resistance region).Anode voltage starts slow rising after reaching maintenance voltage Vh, and electric current increases sharply, and now device is in region of discharge, and current path is transferred on silicon controlled rectifier 42.Notice that maintenance voltage Vh is herein limited by the clamp voltage VhSCR sum of clamp voltage VhD1 on diode string DS1 and silicon controlled rectifier 42, i.e. VhD1+VhSCR.At this, Di is the parasitic diode of the anode two-port of silicon controlled rectifier 42.
Can be learnt by operation principle, realize adjustable trigger voltage Vt1, the electric current namely realized in diode string reaches the voltage during It1 of silicon controlled rectifier 42.And for single diode, when other external conditions are constant, the corresponding fixing voltage of fixing electric current, so the number of diodes in the current path that the concrete grammar realizing variable Vt1 is exactly change two diode strings to be formed.Further, realize adjustable Vh, namely the method for VhD1+VhSCR is the number changing diode in diode string DS1.Figure 5 shows that the change of the number m of diode in diode string DS1 is on the impact of silicon controlled rectifier 40 DC characteristic.The increase of m not only can increase trigger voltage Vt1, also can increase VhD1 simultaneously, namely keeps voltage Vh.Table 1 is depicted as detailed results contrast.The width of diode and silicon controlled rectifier 42 is 100um herein.
The change of table 1m parameter is on the impact of silicon controlled rectifier DC characteristic
Figure 6 shows that the change of the number n of diode in diode string DS2 is on the impact of silicon controlled rectifier 40 DC characteristic.The increase of n can make the pressure drop step-down in diode string DS2 on each diode, will reach identical It1 like this, and the diode string that number of diodes is many just needs larger trigger voltage, i.e. Vt1.
The change of table 2n parameter is on the impact of silicon controlled rectifier DC characteristic
| Parameter | Vt1(V) | Vh(V) | Ron(Ohm) | I9V(A) |
| m＝2,n＝1 | 4.02 | 3.33 | 0.64 | 7.8 |
| m＝2,n＝2 | 4.99 | 3.33 | 0.70 | 5.8 |
| m＝2,n＝3 | 5.96 | 3.33 | 0.76 | 4.6 |
According to ESD design window and above analysis result, take m=2, the silicon controlled rectifier of n=2, as shown in Figure 7, transient state (TLP) simulation result as shown in Figure 8 for its direct current (DC) simulation result.Table 3 is detailed simulation result contrast, and result shows that this device meets the ESD design window [3.3V9V] of TMPSSoC submodule completely.
The simulation result of the silicon controlled rectifier of table 3m=2, n=2
| Parameter | Vt1 | Vh | IVh | I9V |
| DC | 5V | 3.3V | 100mA | 5.77A |
| Tran. | 5.1V | 3.7V | 200mA | 5A |
After completing the device layout conforming with design window and possess higher protection efficiency, in order to provide high-grade ESD protection to take again the least possible silicon area to chip internal circuits simultaneously, the planning and designing for protected network are necessary.Fig. 9 is the basic structure of the full chip electrostatic protection circuit of the utility model one embodiment.Shown in figure 9, electrostatic discharge protection circuit 900 comprises diode triggered and keeps silicon controlled rectifier 920, and diode triggered keeps silicon controlled rectifier 920 to be connected between two voltage end Vdd and Vss.Diode triggered herein keeps silicon controlled rectifier 920 can adopt the silicon controlled rectifier 400 described above.In addition, diode can also be adopted to protect at IO port here.
Based on the protectiving scheme shown in Fig. 9, in order to provide enough protective capacities to each pad place, propose the ESD protected network shown in Figure 10, in figure, each numeral number represents a device, have employed 13 devices in whole network.
Table 4 is the device of each numbering representative in protected network.1,3,4,13 is exactly designed DthSCR, and 5,6,7,9,10,11,12 is diodes, and 2,8 is by the device of two diode direction parallel connections.Above device all designs according to the size of PAD, have employed interdigital domain structure to improve conducting consistency.
The type of each device in table 4 protected network
The discharge path of table 5 protected network when in the face of various electrostatic
As can be seen from Table 5, in actual discharge process, worst situation is the device of electrostatic current through two series connection, i.e. the series connection of silicon controlled rectifier and diode or the series connection of two diodes.Carried out TLP emulation herein accordingly, as shown in figure 11, simulation result shows, 2 series diodes, when discharging, due to size very large (400um), and are forward electric discharges, even if when passing through the TLP electric current of 8A, the clamp voltage on it also only has 3.16V, far below BVDS and BVGS.When DthSCR and Diode series electric discharge, when can find out the TLP electric current adding 8A, device did not still lose efficacy, but clamp voltage now reaches 13.2V, and gate breakdown or source-drain electrode can be caused to puncture.So now its effective protective capacities should be the TLP electric current when clamp voltage is 9V, i.e. 4.2A, according to the relation of TLP electric current and HBM degree of protection, HBM=2.1*TLP, obtaining HBM protective capacities is 8.2kV.And other electric discharge situations are all discharged by individual devices, its protective capacities is higher, so this network can provide the ESD up to HBM8kV to protect for acp chip.
Although the utility model discloses as above with preferred embodiment; so itself and be not used to limit the utility model; any those skilled in the art; not departing from spirit and scope of the present utility model; when doing a little amendment and perfect, therefore protection range of the present utility model is when being as the criterion of defining with claims.
Claims (6)
1. the diode triggered for electrostatic defending keeps silicon controlled rectifier, there is anode tap and cathode terminal and it is characterized in that comprising the first triode, second triode, first resistance, second resistance, diode, first diode string and the second diode string, the anode of this first diode string connects the anode tap of this diode triggered maintenance silicon controlled rectifier, the negative electrode of this first diode string connects the emitter of this first triode, between the emitter that this first resistance and this diode are connected to this first triode and base stage, the collector electrode of this second triode connects the base stage of this first triode, the base stage of this second triode connects the collector electrode of this first triode, the emitter of this second triode connects the cathode terminal of this diode triggered maintenance silicon controlled rectifier, this second resistance connects the base stage of this second triode and the cathode terminal of this diode triggered maintenance silicon controlled rectifier, the anode of this second diode string connects the base stage of this first triode, the negative electrode of this second diode string connects the cathode terminal of this diode triggered maintenance silicon controlled rectifier.
2. diode triggered keeps silicon controlled rectifier as claimed in claim 1, it is characterized in that, this diode triggered keeps the trigger voltage of silicon controlled rectifier and keeps voltage all to increase with the number of diodes increase of this first diode string.
3. diode triggered as claimed in claim 1 keeps silicon controlled rectifier, it is characterized in that, this diode triggered keeps the trigger voltage of silicon controlled rectifier to increase with the number of diodes increase of this second diode string.
4. diode triggered as claimed in claim 1 keeps silicon controlled rectifier, it is characterized in that, this first triode, the second triode, the first resistance, the second resistance, diode composition silicon controlled equivalent electric circuit, wherein this diode is the parasitic diode of this silicon controlled anode two-port.
5. an electrostatic discharge protection circuit, it is characterized in that the diode triggered comprised as described in any one of claim 1-4 keeps silicon controlled rectifier, this diode triggered keeps silicon controlled rectifier to be connected between two voltage ends.
6. electrostatic discharge protection circuit as claimed in claim 5, is characterized in that, also comprise diode, be connected between input/output end port and this voltage end.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201521117093.2U CN205231059U (en) | 2015-12-28 | 2015-12-28 | Electrostatic protection circuit and diode trigger hold gthyristor thereof |
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| CN201521117093.2U CN205231059U (en) | 2015-12-28 | 2015-12-28 | Electrostatic protection circuit and diode trigger hold gthyristor thereof |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106920792A (en) * | 2015-12-28 | 2017-07-04 | 大唐恩智浦半导体有限公司 | Electrostatic discharge protection circuit and its diode triggered keep silicon controlled rectifier (SCR) |
| WO2022142216A1 (en) * | 2021-01-04 | 2022-07-07 | 长鑫存储技术有限公司 | Electrostatic discharge protection circuit, and chip |
| US11721974B2 (en) | 2021-01-04 | 2023-08-08 | Changxin Memory Technologies, Inc. | Electrostatic discharge (ESD) protection circuit and chip |
-
2015
- 2015-12-28 CN CN201521117093.2U patent/CN205231059U/en active Active
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106920792A (en) * | 2015-12-28 | 2017-07-04 | 大唐恩智浦半导体有限公司 | Electrostatic discharge protection circuit and its diode triggered keep silicon controlled rectifier (SCR) |
| WO2022142216A1 (en) * | 2021-01-04 | 2022-07-07 | 长鑫存储技术有限公司 | Electrostatic discharge protection circuit, and chip |
| US11721974B2 (en) | 2021-01-04 | 2023-08-08 | Changxin Memory Technologies, Inc. | Electrostatic discharge (ESD) protection circuit and chip |
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