CN205212175U - Cooling of semiconductor laser microchannel is heat sink - Google Patents
Cooling of semiconductor laser microchannel is heat sink Download PDFInfo
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- CN205212175U CN205212175U CN201520814423.7U CN201520814423U CN205212175U CN 205212175 U CN205212175 U CN 205212175U CN 201520814423 U CN201520814423 U CN 201520814423U CN 205212175 U CN205212175 U CN 205212175U
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- microchannel
- semiconductor laser
- heat sink
- cooling
- heat conduction
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Abstract
The utility model provides a cooling of semiconductor laser microchannel is heat sink, it is heat sink with the microchannel that relates to semiconductor laser, including monolithic formula base member, the base member comprises the 5 floor height heat conduction rectangle thin slices that pile up from top to bottom, and the inside cooling microchannel that forms in welding encapsulation back is piled up each other in the surface cutting of every floor height heat conduction rectangle thin slice, and the high heat conduction rectangle thin slice of base member top and bottom is WCu electronic packaging material, and the high heat conduction rectangle thin slice of middle three -layer is alSiC electronic packaging material. It is high with chip matching rate, than the copper microchannel heat sink improvement of cooling more than 10 times, lengthen life -span of high power semiconductor laser greatly, reduce the semiconductor laser array chip and the heat sink welding degree of difficulty.
Description
Technical field
The utility model relates to semiconductor laser micro-channel heat sink, belongs to field of semiconductor photoelectron technique.
Background technology
High (greatly) power semiconductor laser (LD) and array thereof are the ideal laser source in the fields such as industry, medical treatment and basic research, are widely used.Semiconductor laser is heat radiation to the greatest problem that high-average power development exists, along with the increase of Injection Current, the heat power consumption produced increases thereupon, caused the temperature rising of active area can affect laser performance parameter by heat power consumption, laser can be made time serious to wrack, how effectively derive the heat because dissipation power transforms, solving cooling heat dissipation problem becomes one of key technology that development high-power semiconductor laser must capture.At present, the electrical efficiency of high-performance semiconductor laser is about 50%, and its complementary energy transforms into heat energy substantially.Therefore, the laser obtaining certain energy must supervene the heat energy of about 1 times, in addition, the feature that in high-power semiconductor laser, heat produces concentrates very much, within unit are or volume, produce the heat (current representative value 1 × 107W/m2) of high density of heat flow rate, such heat and density of heat flow rate are all very surprising, only have and adopt efficiently, low thermal resistance heat sink/cooler (radiator for heat exchange between laser thermal source and cooling fluid), concentrated heat could be derived from heating part and only cause the reasonable rising of temperature.
Heat is taken away by forced convertion when microchannel cooling heat sink flows through microchannel by liquid fast, and having very strong heat-sinking capability, is the main heat sink mode of current high power semiconductor laser array chip.Microchannel cooling heat sink internal channel structure is complicated, and usually adopt multilayer cutting no-oxygen copper plate to be welded through soldering or thermal diffusion, rate of finished products is low, expensive, and the passage of copper product is easily by aqueous corrosion, causes its life-span at 20,000 hours; Copper product (CTE is 17.5) differs greatly with the thermal coefficient of expansion of semiconductor laser chip material (CTE is 6.5) in addition, when chip operation, temperature generation acute variation causes chip local to produce strong thermal stress, this will reduce the life-span of semiconductor laser array chip greatly, also can cause each luminescence unit output beam directive property of semiconductor laser array that irregular change occurs in addition, thus reduce the beam quality of semiconductor laser array Output of laser.Current copper microchannel cooling heat sink is the key element of restriction high power semiconductor laser array prolonged periods steady operation.Although and directly make microchannel cooling heat sink with WCu electronic package material and can overcome the problem of oxygen-free copper microchannel cooling heat sink but expensive, cost remains high.
Summary of the invention
The utility model is for the deficiencies in the prior art, provide a kind of high with chip matching rate, more than 10 times are improved than copper microchannel cooling heat sink, greatly extend the life-span of high-power semiconductor laser, reduce semiconductor laser array chip and the heat sink semiconductor laser microchannel cooling heat sink welding difficulty.
For realizing the utility model object, provide following technical scheme: a kind of semiconductor laser microchannel cooling heat sink, comprise one chip matrix, described matrix is made up of 5 floor height heat conduction rectangular tab of stacked on top, every floor height heat conduction rectangular tab surface groove, after mutual stacking welding encapsulation, inner formation cools microchannel, and it is characterized in that the high heat conduction rectangular tab of matrix top and bottom is WCu electronic package material, the high heat conduction rectangular tab of middle three layers is AlSiC electronic package material.
As preferably, cooling microchannel is inwall is helical form progressive structure.
As preferably, the thermal coefficient of expansion of WCu electronic package material and AlSiC electronic package material is set to 6.5 ~ 9.5 × 10
-6/ K.
As preferably, cooling microchannel interior walls pitch is M1, included angle of thread degree 42.9 degree.
As preferably, cooling microchannel diameter is 0.2mm.
As preferably, welding encapsulation adopts multilayer low temperature co-fired, and firing temperature is 480 DEG C ± 1 DEG C, firing time 5 minutes, and pressure is 100 ~ 200N.
The technical know-how of concrete elaboration the technical solution of the utility model:
Product selection and material characteristics
WCu-AlSiC microchannel cooling heat sink adopts WCu electronic package material and AlSiC electronic package material.
The performance characteristics of AlSiC electronic package material
AlSiC has high thermal conductivity (170 ~ 200W/mK) and adjustable thermal coefficient of expansion (6.5 ~ 9.5 × 10-6/K), can prevent the generation of fatigue failure.The heat-radiating properties heat that well therefore chip produces of AlSiC can distribute in time, and the reliability and stability of whole like this components and parts improve greatly.AlSiC can carry out anodized and overcome passage easily by the problem of aqueous corrosion.The specific stiffness (rigidity is divided by density) of AlSiC is 25 times of oxygen-free copper.
Though AlSiC there is above advantage the property of limiting to due to current processing technology make it on the precision of size, flatness, surface smoothness and surface can't the hole class formation of project organization complexity reason causes this material can't make separately the microchannel cooling heat sink of height (greatly) power semiconductor laser chip above etc.
The performance characteristics of WCu electronic package material
Tungsten copper electronic package material is the composite material of a kind of tungsten and copper, it had both had the low expansion character of tungsten, there is again the high thermal conduction characteristic (180 ~ 230W/mK) of copper, especially valuable is, its thermal coefficient of expansion (6.5 ~ 9.5 × 10-6/K) and heat-conductivity conducting performance can be designed by the composition of adjustment material (to be said with technical term, its performance is tailorable), bring great convenience thus to the application of this material, simultaneously because the machinability of WCu electronic package material makes the precision of size, flatness, surface smoothness meets the instructions for use of high power semiconductor lasers chip, therefore high (greatly) power semiconductor chip can be potted directly on microchannel cooling heat sink that tungsten copper encapsulating material makes.
The utility model beneficial effect: the utility model and chip matching rate high, more than 10 times are improved than copper microchannel cooling heat sink, greatly extend the life-span of high-power semiconductor laser, reduce semiconductor laser array chip and weld difficulty with heat sink, spiral progressive runner substantially increases area of dissipation and heat radiation time, improves cooling heat sink efficiency.
Accompanying drawing explanation
Fig. 1 is structural representation of the present utility model.
Fig. 2 is the utility model inner microchannel schematic diagram.
Embodiment
Embodiment 1: a kind of semiconductor laser microchannel cooling heat sink, comprise one chip matrix 1, described matrix 1 is made up of 5 floor height heat conduction rectangular tab 1.1 of stacked on top, every floor height heat conduction rectangular tab 1.1 surface groove, after mutual stacking welding encapsulation, inner formation cools microchannel 1.2, the high heat conduction rectangular tab 1.1 of matrix 1 top and bottom is WCu electronic package material, and the high heat conduction rectangular tab 1.1 of middle three layers is AlSiC electronic package material.Cooling microchannel 1.2 inwall is helical form progressive structure.The thermal coefficient of expansion of WCu electronic package material and AlSiC electronic package material is set to 6.5 × 10
-6/ K.Cooling microchannel 1.2 inwall pitch is for being M1, included angle of thread degree 42.9 degree, and cooling microchannel 1.1 diameter is 0.2mm.Welding encapsulation adopts multilayer low temperature co-fired, and firing temperature is 480 DEG C ± 1 DEG C, firing time 5 minutes, and pressure is 100 ~ 200N.
Claims (5)
1. a semiconductor laser microchannel cooling heat sink, comprise one chip matrix, described matrix is made up of 5 floor height heat conduction rectangular tab of stacked on top, every floor height heat conduction rectangular tab surface groove, after mutual stacking welding encapsulation, inner formation cools microchannel, the high heat conduction rectangular tab that it is characterized in that matrix top and bottom is WCu electronic package material, and the high heat conduction rectangular tab of middle three layers is AlSiC electronic package material.
2. a kind of semiconductor laser microchannel cooling heat sink according to claim 1, is characterized in that cooling microchannel interior walls is helical form progressive structure.
3. a kind of semiconductor laser microchannel cooling heat sink according to claim 1, is characterized in that the thermal coefficient of expansion of WCu electronic package material and AlSiC electronic package material is set to 6.5 ~ 9.5 × 10
-6/ K.
4. a kind of semiconductor laser microchannel cooling heat sink according to claim 2, is characterized in that cooling microchannel interior walls pitch is M1, included angle of thread degree 42.9 degree.
5. a kind of semiconductor laser microchannel cooling heat sink according to claim 1, is characterized in that cooling microchannel diameter is 0.2mm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520814423.7U CN205212175U (en) | 2015-10-21 | 2015-10-21 | Cooling of semiconductor laser microchannel is heat sink |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520814423.7U CN205212175U (en) | 2015-10-21 | 2015-10-21 | Cooling of semiconductor laser microchannel is heat sink |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN205212175U true CN205212175U (en) | 2016-05-04 |
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ID=55849869
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201520814423.7U Expired - Fee Related CN205212175U (en) | 2015-10-21 | 2015-10-21 | Cooling of semiconductor laser microchannel is heat sink |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN205212175U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109818255A (en) * | 2019-03-13 | 2019-05-28 | 西安炬光科技股份有限公司 | It is a kind of for improving the refrigerator, encapsulating structure and method of smile |
-
2015
- 2015-10-21 CN CN201520814423.7U patent/CN205212175U/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109818255A (en) * | 2019-03-13 | 2019-05-28 | 西安炬光科技股份有限公司 | It is a kind of for improving the refrigerator, encapsulating structure and method of smile |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20160504 Termination date: 20161021 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |