CN205188428U - Cooling device in magnetic control direct current sputtering system - Google Patents
Cooling device in magnetic control direct current sputtering system Download PDFInfo
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- CN205188428U CN205188428U CN201520929786.5U CN201520929786U CN205188428U CN 205188428 U CN205188428 U CN 205188428U CN 201520929786 U CN201520929786 U CN 201520929786U CN 205188428 U CN205188428 U CN 205188428U
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- cooling
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- heat rejecter
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Abstract
The utility model discloses a cooling device in magnetic control direct current sputtering system, it is including the cooling cavity to and extend to the transmission track of cooling in the cavity, cooling cavity inside is provided with a plurality of jet -propelled pipelines, and its intercommunication is to setting up in the nitrogen gas container of cooling cavity outside, the cooling cavity is including feed inlet and discharge gate, and among the cooling cavity, the corresponding position of feed inlet is provided with the auxiliary cooling room, and the indoor portion of auxiliary cooling is provided with the intermediate layer, the inside cooling pipe that is provided with of intermediate layer, and the cooling pipe intercommunication is to setting up the cooling trough in cooling cavity outside, adopt above -mentioned technical scheme's cooling device in magnetic control direct current sputtering system, its accessible auxiliary cooling room with and inside cooling water tentatively cool off to the material to make material processings of can cooling down in advance before receiving nitrogen gas effect, thus avoid the material under the nitrogen gas effect rapid the cooling and inside leading to it the residual strain too much, cause the material performance to receive the influence.
Description
Technical field
The present invention relates to a kind of semiconductor processing equipment, the intrasystem refrigerating unit of especially a kind of magnetic control d.c. sputtering.
Background technology
In magnetic control d.c. sputtering system, after completing sputtering processing for the production of the material of semi-conductor, all need to carry out cooling process to it.Existing process for cooling is all directly cooled material by nitrogen, but, because material exists certain warming phenomenon in sputter procedure, quick refrigeration is carried out to it and very easily makes internal batch produce residual stress, cause later stage material to be very easily damaged in use.
Summary of the invention
The technical problem to be solved in the present invention is to provide the intrasystem refrigerating unit of a kind of magnetic control d.c. sputtering, and it can avoid material in process of cooling, produce the excessive phenomenon of internal residual stresses.
For solving the problems of the technologies described above, the present invention relates to the intrasystem refrigerating unit of a kind of magnetic control d.c. sputtering, it includes cooling chamber, and extends to the transporting rail in cooling chamber; Described cooling chamber inside is provided with multiple jet pipe, its be communicated to be arranged on cooling chamber outside nitrogen gas container in; Described cooling chamber includes opening for feed and discharge port, among cooling chamber, the correspondence position of opening for feed is provided with supplement heat rejecter room, and supplement heat rejecter chamber interior is provided with interlayer, interlayer inside is provided with cooling duct, and cooling duct is communicated to the cooling trough being arranged on cooling cavities outside.
As a modification of the present invention, described supplement heat rejecter room adopts ring structure, and it distributes around transporting rail, and the distance between supplement heat rejecter room and transporting rail upper surface is at most 10 centimetres.Adopt above-mentioned design, its supplement heat rejecter room by annular is to carry out the uniform decrease in temperature of all directions to the material in transmission pipeline, the distance between supplement heat rejecter room and transporting rail upper surface then can guarantee its cooling-down effect.
As a modification of the present invention, described supplement heat rejecter chamber interior is provided with multiple auxiliary jet pipe, and it is communicated to the air compressor being arranged on cooling cavities outside.Adopt above-mentioned design, its unheated air exported by multiple auxiliary jet pipe carries out air-cooled process to material, and by the temperature of output gas flow, material is cooled gradually.
As a modification of the present invention, described supplement heat rejecter indoor are provided with at least 4 auxiliary jet pipes, and it is symmetrically distributed in the both sides of transporting rail, and each auxiliary jet pipe all extends towards the upper surface of transporting rail.Adopt above-mentioned design, it is by the vibrational power flow of auxiliary jet pipe, makes the material of each position can be able to the uniform air-cooled process in both sides, drops to avoid material under fluidizing air effect.
Adopt the intrasystem refrigerating unit of magnetic control d.c. sputtering of technique scheme, its water coolant by supplement heat rejecter room and its inside tentatively cools for material, to make material by process of being lowered the temperature in advance before nitrogen effect, thus avoid material sharply to lower the temperature under nitrogen effect and cause its internal residual stresses too much, cause material performance to be affected.
Accompanying drawing explanation
Fig. 1 is schematic diagram of the present invention;
Fig. 2 is supplement heat rejecter room vertical view in the present invention;
Reference numerals list:
1-cooling chamber, 2-transporting rail, 3-jet pipe, 4-nitrogen gas container, 5-opening for feed, 6-discharge port, 7-supplement heat rejecter room, 8-interlayer, 9-cooling duct, 10-cooling trough, 11-auxiliary jet pipe, 12-air compressor.
Embodiment
Below in conjunction with embodiment, illustrate the present invention further, following embodiment should be understood and be only not used in for illustration of the present invention and limit the scope of the invention.
Embodiment 1
The intrasystem refrigerating unit of a kind of magnetic control d.c. sputtering as shown in Figure 1, it includes cooling chamber 1, and extends to the transporting rail 2 in cooling chamber 1; Described cooling chamber 1 inside is provided with multiple jet pipe 3, its be communicated to be arranged on cooling chamber 1 outside nitrogen gas container 4 in; Described cooling chamber 1 includes opening for feed 5 and discharge port 6, among cooling chamber 1, the correspondence position of opening for feed 5 is provided with supplement heat rejecter room 7, inside, supplement heat rejecter room 7 is provided with interlayer 8, interlayer 8 inside is provided with cooling duct 9, and cooling duct 9 is communicated to the cooling trough 10 being arranged on cooling cavities 1 outside.
As a modification of the present invention, described supplement heat rejecter room 7 adopts ring structure, and it distributes around transporting rail 2, and the distance between supplement heat rejecter room 7 and transporting rail 2 upper surface is 5 centimetres.Adopt above-mentioned design, its supplement heat rejecter room by annular is to carry out the uniform decrease in temperature of all directions to the material in transmission pipeline, the distance between supplement heat rejecter room and transporting rail upper surface then can guarantee its cooling-down effect.
Adopt the intrasystem refrigerating unit of magnetic control d.c. sputtering of technique scheme, its water coolant by supplement heat rejecter room and its inside tentatively cools for material, to make material by process of being lowered the temperature in advance before nitrogen effect, thus avoid material sharply to lower the temperature under nitrogen effect and cause its internal residual stresses too much, cause material performance to be affected.
Embodiment 2
As a modification of the present invention, as shown in Figure 2, inside, described supplement heat rejecter room 7 is provided with multiple auxiliary jet pipe 11, and it is communicated to the air compressor 12 being arranged on cooling cavities 1 outside.Adopt above-mentioned design, its unheated air exported by multiple auxiliary jet pipe carries out air-cooled process to material, and by the temperature of output gas flow, material is cooled gradually.
As a modification of the present invention, be provided with 4 auxiliary jet pipes 11 in described supplement heat rejecter room 7, it is symmetrically distributed in the both sides of transporting rail 2, and each auxiliary jet pipe 11 all extends towards the upper surface of transporting rail 2.Adopt above-mentioned design, it is by the vibrational power flow of auxiliary jet pipe, makes the material of each position can be able to the uniform air-cooled process in both sides, drops to avoid material under fluidizing air effect.
All the other feature & benefits of the present embodiment are all identical with embodiment 1.
Claims (4)
1. the intrasystem refrigerating unit of magnetic control d.c. sputtering, it includes cooling chamber, and extends to the transporting rail in cooling chamber; Described cooling chamber inside is provided with multiple jet pipe, its be communicated to be arranged on cooling chamber outside nitrogen gas container in; It is characterized in that, described cooling chamber includes opening for feed and discharge port, among cooling chamber, the correspondence position of opening for feed is provided with supplement heat rejecter room, supplement heat rejecter chamber interior is provided with interlayer, interlayer inside is provided with cooling duct, and cooling duct is communicated to the cooling trough being arranged on cooling cavities outside.
2. according to the intrasystem refrigerating unit of magnetic control d.c. sputtering according to claim 1, it is characterized in that, described supplement heat rejecter room adopts ring structure, and it distributes around transporting rail, and the distance between supplement heat rejecter room and transporting rail upper surface is at most 10 centimetres.
3. according to the intrasystem refrigerating unit of magnetic control d.c. sputtering according to claim 2, it is characterized in that, described supplement heat rejecter chamber interior is provided with multiple auxiliary jet pipe, and it is communicated to the air compressor being arranged on cooling cavities outside.
4. according to the intrasystem refrigerating unit of magnetic control d.c. sputtering according to claim 3, it is characterized in that, described supplement heat rejecter indoor are provided with at least 4 auxiliary jet pipes, it is symmetrically distributed in the both sides of transporting rail, and each auxiliary jet pipe all extends towards the upper surface of transporting rail.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520929786.5U CN205188428U (en) | 2015-11-20 | 2015-11-20 | Cooling device in magnetic control direct current sputtering system |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520929786.5U CN205188428U (en) | 2015-11-20 | 2015-11-20 | Cooling device in magnetic control direct current sputtering system |
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| Publication Number | Publication Date |
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| CN205188428U true CN205188428U (en) | 2016-04-27 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201520929786.5U Active CN205188428U (en) | 2015-11-20 | 2015-11-20 | Cooling device in magnetic control direct current sputtering system |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105316638A (en) * | 2015-11-20 | 2016-02-10 | 苏州赛森电子科技有限公司 | Cooling device in magnetic control direct current sputtering system |
| CN106399953A (en) * | 2016-06-21 | 2017-02-15 | 乔宪武 | Target-sputtering self-circulating cooling device |
-
2015
- 2015-11-20 CN CN201520929786.5U patent/CN205188428U/en active Active
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105316638A (en) * | 2015-11-20 | 2016-02-10 | 苏州赛森电子科技有限公司 | Cooling device in magnetic control direct current sputtering system |
| CN106399953A (en) * | 2016-06-21 | 2017-02-15 | 乔宪武 | Target-sputtering self-circulating cooling device |
| CN106399953B (en) * | 2016-06-21 | 2018-12-18 | 杭州联芳科技有限公司 | A kind of sputtering target material self circulation cooling device |
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