CN105316638A - Cooling device in magnetic control direct current sputtering system - Google Patents
Cooling device in magnetic control direct current sputtering system Download PDFInfo
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- CN105316638A CN105316638A CN201510806340.8A CN201510806340A CN105316638A CN 105316638 A CN105316638 A CN 105316638A CN 201510806340 A CN201510806340 A CN 201510806340A CN 105316638 A CN105316638 A CN 105316638A
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- cooling
- magnetic control
- supplement heat
- cooling chamber
- heat rejecter
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Abstract
The invention discloses a cooling device in a magnetic control direct current sputtering system. The cooling device comprises a cooling cavity and a conveying track extending into the cooling cavity. A plurality of air injection pipelines are arranged in the cooling cavity and communicated into a nitrogen container arranged outside the cooling cavity. The cooling cavity comprises a feed inlet and a discharge outlet. An auxiliary cooling chamber is arranged in the position, corresponding to the feed inlet, in the cooling cavity. An interlayer is arranged in the auxiliary cooling chamber. A cooling pipeline is arranged in the interlayer. The cooling pipeline is communicated with a cooling water tank arranged outside the cooling cavity. According to the cooling device, in the magnetic control direct current sputtering system, adopting the technical scheme, materials can be cooled preliminarily through the auxiliary cooling chamber and cooling water in the auxiliary cooling chamber, and the materials are subjected to pre-cooling treatment before being subjected to the action of nitrogen, so that the performance of the materials is prevented from being influenced by too much residual stress in the materials due to the fact that the materials are cooled rapidly under the action of the nitrogen.
Description
Technical field
The present invention relates to a kind of semiconductor processing equipment, the intrasystem refrigerating unit of especially a kind of magnetic control d.c. sputtering.
Background technology
In magnetic control d.c. sputtering system, after completing sputtering processing for the production of the material of semi-conductor, all need to carry out cooling process to it.Existing process for cooling is all directly cooled material by nitrogen, but, because material exists certain warming phenomenon in sputter procedure, quick refrigeration is carried out to it and very easily makes internal batch produce residual stress, cause later stage material to be very easily damaged in use.
Summary of the invention
The technical problem to be solved in the present invention is to provide the intrasystem refrigerating unit of a kind of magnetic control d.c. sputtering, and it can avoid material in process of cooling, produce the excessive phenomenon of internal residual stresses.
For solving the problems of the technologies described above, the present invention relates to the intrasystem refrigerating unit of a kind of magnetic control d.c. sputtering, it includes cooling chamber, and extends to the transporting rail in cooling chamber; Described cooling chamber inside is provided with multiple jet pipe, its be communicated to be arranged on cooling chamber outside nitrogen gas container in; Described cooling chamber includes opening for feed and discharge port, among cooling chamber, the correspondence position of opening for feed is provided with supplement heat rejecter room, and supplement heat rejecter chamber interior is provided with interlayer, interlayer inside is provided with cooling duct, and cooling duct is communicated to the cooling trough being arranged on cooling cavities outside.
As a modification of the present invention, described supplement heat rejecter room adopts ring structure, and it distributes around transporting rail, and the distance between supplement heat rejecter room and transporting rail upper surface is at most 10 centimetres.Adopt above-mentioned design, its supplement heat rejecter room by annular is to carry out the uniform decrease in temperature of all directions to the material in transmission pipeline, the distance between supplement heat rejecter room and transporting rail upper surface then can guarantee its cooling-down effect.
As a modification of the present invention, described supplement heat rejecter chamber interior is provided with multiple auxiliary jet pipe, and it is communicated to the air compressor being arranged on cooling cavities outside.Adopt above-mentioned design, its unheated air exported by multiple auxiliary jet pipe carries out air-cooled process to material, and by the temperature of output gas flow, material is cooled gradually.
As a modification of the present invention, described supplement heat rejecter indoor are provided with at least 4 auxiliary jet pipes, and it is symmetrically distributed in the both sides of transporting rail, and each auxiliary jet pipe all extends towards the upper surface of transporting rail.Adopt above-mentioned design, it is by the vibrational power flow of auxiliary jet pipe, makes the material of each position can be able to the uniform air-cooled process in both sides, drops to avoid material under fluidizing air effect.
Adopt the intrasystem refrigerating unit of magnetic control d.c. sputtering of technique scheme, its water coolant by supplement heat rejecter room and its inside tentatively cools for material, to make material by process of being lowered the temperature in advance before nitrogen effect, thus avoid material sharply to lower the temperature under nitrogen effect and cause its internal residual stresses too much, cause material performance to be affected.
Accompanying drawing explanation
Fig. 1 is schematic diagram of the present invention;
Fig. 2 is supplement heat rejecter room vertical view in the present invention;
Reference numerals list:
1-cooling chamber, 2-transporting rail, 3-jet pipe, 4-nitrogen gas container, 5-opening for feed, 6-discharge port, 7-supplement heat rejecter room, 8-interlayer, 9-cooling duct, 10-cooling trough, 11-auxiliary jet pipe, 12-air compressor.
Embodiment
Below in conjunction with embodiment, illustrate the present invention further, following embodiment should be understood and be only not used in for illustration of the present invention and limit the scope of the invention.
Embodiment 1
The intrasystem refrigerating unit of a kind of magnetic control d.c. sputtering as shown in Figure 1, it includes cooling chamber 1, and extends to the transporting rail 2 in cooling chamber 1; Described cooling chamber 1 inside is provided with multiple jet pipe 3, its be communicated to be arranged on cooling chamber 1 outside nitrogen gas container 4 in; Described cooling chamber 1 includes opening for feed 5 and discharge port 6, among cooling chamber 1, the correspondence position of opening for feed 5 is provided with supplement heat rejecter room 7, inside, supplement heat rejecter room 7 is provided with interlayer 8, interlayer 8 inside is provided with cooling duct 9, and cooling duct 9 is communicated to the cooling trough 10 being arranged on cooling cavities 1 outside.
As a modification of the present invention, described supplement heat rejecter room 7 adopts ring structure, and it distributes around transporting rail 2, and the distance between supplement heat rejecter room 7 and transporting rail 2 upper surface is 5 centimetres.Adopt above-mentioned design, its supplement heat rejecter room by annular is to carry out the uniform decrease in temperature of all directions to the material in transmission pipeline, the distance between supplement heat rejecter room and transporting rail upper surface then can guarantee its cooling-down effect.
Adopt the intrasystem refrigerating unit of magnetic control d.c. sputtering of technique scheme, its water coolant by supplement heat rejecter room and its inside tentatively cools for material, to make material by process of being lowered the temperature in advance before nitrogen effect, thus avoid material sharply to lower the temperature under nitrogen effect and cause its internal residual stresses too much, cause material performance to be affected.
Embodiment 2
As a modification of the present invention, as shown in Figure 2, inside, described supplement heat rejecter room 7 is provided with multiple auxiliary jet pipe 11, and it is communicated to the air compressor 12 being arranged on cooling cavities 1 outside.Adopt above-mentioned design, its unheated air exported by multiple auxiliary jet pipe carries out air-cooled process to material, and by the temperature of output gas flow, material is cooled gradually.
As a modification of the present invention, be provided with 4 auxiliary jet pipes 11 in described supplement heat rejecter room 7, it is symmetrically distributed in the both sides of transporting rail 2, and each auxiliary jet pipe 11 all extends towards the upper surface of transporting rail 2.Adopt above-mentioned design, it is by the vibrational power flow of auxiliary jet pipe, makes the material of each position can be able to the uniform air-cooled process in both sides, drops to avoid material under fluidizing air effect.
All the other feature & benefits of the present embodiment are all identical with embodiment 1.
Claims (4)
1. the intrasystem refrigerating unit of magnetic control d.c. sputtering, it includes cooling chamber, and extends to the transporting rail in cooling chamber; Described cooling chamber inside is provided with multiple jet pipe, its be communicated to be arranged on cooling chamber outside nitrogen gas container in; It is characterized in that, described cooling chamber includes opening for feed and discharge port, among cooling chamber, the correspondence position of opening for feed is provided with supplement heat rejecter room, supplement heat rejecter chamber interior is provided with interlayer, interlayer inside is provided with cooling duct, and cooling duct is communicated to the cooling trough being arranged on cooling cavities outside.
2. according to the intrasystem refrigerating unit of magnetic control d.c. sputtering according to claim 1, it is characterized in that, described supplement heat rejecter room adopts ring structure, and it distributes around transporting rail, and the distance between supplement heat rejecter room and transporting rail upper surface is at most 10 centimetres.
3. according to the intrasystem refrigerating unit of magnetic control d.c. sputtering according to claim 2, it is characterized in that, described supplement heat rejecter chamber interior is provided with multiple auxiliary jet pipe, and it is communicated to the air compressor being arranged on cooling cavities outside.
4. according to the intrasystem refrigerating unit of magnetic control d.c. sputtering according to claim 3, it is characterized in that, described supplement heat rejecter indoor are provided with at least 4 auxiliary jet pipes, it is symmetrically distributed in the both sides of transporting rail, and each auxiliary jet pipe all extends towards the upper surface of transporting rail.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510806340.8A CN105316638A (en) | 2015-11-20 | 2015-11-20 | Cooling device in magnetic control direct current sputtering system |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510806340.8A CN105316638A (en) | 2015-11-20 | 2015-11-20 | Cooling device in magnetic control direct current sputtering system |
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| Publication Number | Publication Date |
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| CN105316638A true CN105316638A (en) | 2016-02-10 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201510806340.8A Pending CN105316638A (en) | 2015-11-20 | 2015-11-20 | Cooling device in magnetic control direct current sputtering system |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108971959A (en) * | 2018-09-12 | 2018-12-11 | 珠海格力智能装备有限公司 | Gas collecting tube production line |
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| US5607009A (en) * | 1993-01-28 | 1997-03-04 | Applied Materials, Inc. | Method of heating and cooling large area substrates and apparatus therefor |
| CN201006893Y (en) * | 2006-08-28 | 2008-01-16 | 深圳豪威真空光电子股份有限公司 | Substrate refrigerating mechanism |
| CN202116640U (en) * | 2011-06-23 | 2012-01-18 | 中国科学院金属研究所 | Arc ion plating cooling device for preparing amorphous thin films |
| CN102465270A (en) * | 2010-11-12 | 2012-05-23 | 北大方正集团有限公司 | Conducting film, preparation device thereof and preparation method thereof |
| CN103079359A (en) * | 2011-10-26 | 2013-05-01 | 台湾利他股份有限公司 | Rapid element adhering method |
| CN205188428U (en) * | 2015-11-20 | 2016-04-27 | 苏州赛森电子科技有限公司 | Cooling device in magnetic control direct current sputtering system |
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2015
- 2015-11-20 CN CN201510806340.8A patent/CN105316638A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5607009A (en) * | 1993-01-28 | 1997-03-04 | Applied Materials, Inc. | Method of heating and cooling large area substrates and apparatus therefor |
| CN201006893Y (en) * | 2006-08-28 | 2008-01-16 | 深圳豪威真空光电子股份有限公司 | Substrate refrigerating mechanism |
| CN102465270A (en) * | 2010-11-12 | 2012-05-23 | 北大方正集团有限公司 | Conducting film, preparation device thereof and preparation method thereof |
| CN202116640U (en) * | 2011-06-23 | 2012-01-18 | 中国科学院金属研究所 | Arc ion plating cooling device for preparing amorphous thin films |
| CN103079359A (en) * | 2011-10-26 | 2013-05-01 | 台湾利他股份有限公司 | Rapid element adhering method |
| CN205188428U (en) * | 2015-11-20 | 2016-04-27 | 苏州赛森电子科技有限公司 | Cooling device in magnetic control direct current sputtering system |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108971959A (en) * | 2018-09-12 | 2018-12-11 | 珠海格力智能装备有限公司 | Gas collecting tube production line |
| CN108971959B (en) * | 2018-09-12 | 2024-01-30 | 珠海格力智能装备有限公司 | Gas collecting tube production line |
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Application publication date: 20160210 |