CN205178855U - High -power IGBT gate drive ware - Google Patents

High -power IGBT gate drive ware Download PDF

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Publication number
CN205178855U
CN205178855U CN201521030260.XU CN201521030260U CN205178855U CN 205178855 U CN205178855 U CN 205178855U CN 201521030260 U CN201521030260 U CN 201521030260U CN 205178855 U CN205178855 U CN 205178855U
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China
Prior art keywords
circuit
drive
electrically connected
igbt
host computer
Prior art date
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Active
Application number
CN201521030260.XU
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Chinese (zh)
Inventor
马剑
陈鹏
佟妍
王超
田立岭
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Jiangsu Urban Mass Transit Research & Design Institute Co Ltd
NANJING RAIL TRANSIT SYSTEMS CO Ltd
Original Assignee
Jiangsu Urban Mass Transit Research & Design Institute Co Ltd
NANJING RAIL TRANSIT SYSTEMS CO Ltd
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Application filed by Jiangsu Urban Mass Transit Research & Design Institute Co Ltd, NANJING RAIL TRANSIT SYSTEMS CO Ltd filed Critical Jiangsu Urban Mass Transit Research & Design Institute Co Ltd
Priority to CN201521030260.XU priority Critical patent/CN205178855U/en
Application granted granted Critical
Publication of CN205178855U publication Critical patent/CN205178855U/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Abstract

The utility model discloses a high -power IGBT gate drive ware, include: drive module, protective film piece and electric isolation module, the three respectively with IGBT and external host computer electric connection, the electric isolation module contain: buffer circuit, drive circuit and grid voltage protection circuit, the three is electric connection in proper order, and the pulse signal of output, grid voltage protection circuit electric connection IGBT are received to the external host computer of buffer circuit electric connection, drive module contain: drive plate power supply circuit, undervoltage protection circuit, the two electric connection, the protective film piece contain: control repayment circuit, short -circuit protection circuit, drive protection circuit, overvoltage crowbar, the external host computer of control repayment circuit electric connection to respectively with short -circuit protection circuit, drive protection circuit and overvoltage crowbar electric connection. The utility model discloses guarantee the optimal control of IGBT under the rated power condition to provide drive, under -voltage, short circuit and the all -round protection of excessive pressure.

Description

High-power IGBT gate drivers
Technical field
The utility model relates to power electronic system technical field, especially for a kind of gate drivers that can provide driving for the high-tension high-power IGBT of 3300V/1500A.
Background technology
Because IGBT has, switching frequency is high, conducting power consumption is little and gate pole controls the features such as convenient, is widely used in high-power transformation system.The drive scheme of current IGBT application is a lot, many companies have have all manufactured and designed special driving chip, these driving chip respectively have feature, but often for the product of our company, to safeguard its intellectual property, cause driving chip poor universality, driving design protection has many incomplete places; And much chip Direct driver power is little, the product for large driving power is often expensive, even exceedes corresponding IGBT.Run into many difficult problems in actual applications; so multi-chip is all based on IGBT mono-tube design, does not consider the problem such as dead zone function, outer protection interface electromagnetic interference elimination of triggering signal between IGBT in actual applications and the isolation of multichannel driving power, same brachium pontis.
Summary of the invention
Be directed to above-mentioned the deficiencies in the prior art, the purpose of this utility model is to provide a kind of high-power IGBT gate drivers, to ensure the optimal control of IGBT in rated power situation, and provides driving, under-voltage, short circuit and overvoltage omnibearing protection.
For achieving the above object, a kind of high-power IGBT gate drivers of the present utility model, comprise: driver module, protection module and electrical isolation module, three is electrically connected with IGBT and extraneous host computer respectively, described electrical isolation module comprises: buffer circuit, drive circuit and grid voltage protective circuit, three is electrically connected successively, and buffer circuit is electrically connected extraneous host computer and receives the pulse signal exported, and grid voltage protective circuit is electrically connected IGBT; Described driver module comprises: drive plate power circuit, under-voltage protecting circuit, and the two is electrically connected, and drive plate power circuit is electrically connected extraneous host computer; Described protection module comprises: control feedback circuit, short-circuit protection circuit, Drive Protecting Circuit, overvoltage crowbar, control feedback circuit and be electrically connected extraneous host computer, and be electrically connected with short-circuit protection circuit, Drive Protecting Circuit and overvoltage crowbar respectively; Short-circuit protection circuit and overvoltage crowbar are also electrically connected IGBT respectively; Drive Protecting Circuit is electrically connected above-mentioned buffer circuit.
Preferably, described drive plate power circuit reception host computer exports ± 24V square wave power, and pressure regulation exports+15V and-12V voltage.
Preferably, the voltage that described under-voltage protecting circuit controls to export is: 13.5V ~ 16.5V ,-10.5V ~-13.5V.
The beneficial effects of the utility model:
1) the utility model designs peripheral driver and protective circuit for the high-tension high-power IGBT of 3300V/1500A, ensures that IGBT can normally turn on and off at rated power, and provides short circuit and overcurrent protection.
2) devise perfect drive pulse signal preprocessing function, ensure the reliability of the pulse signal of IGBT grid.
3) pulse transformer adopts edge of a pulse coupling transfer mode, and the advantage of this mode is that pulse transformer only transmits the fixing narrow pulse signal of pulse duration, can adapt to the drive pulse signal of duty ratio wide region change.
4) driver design height is integrated, reduces the volume of driver, reduces the connecting line length between driver and IGBT module, reduces lead-in inductance.
Accompanying drawing explanation
Fig. 1 illustrates structural principle block diagram of the present utility model.
Embodiment
For the ease of the understanding of those skilled in the art, be further described the utility model below in conjunction with embodiment and accompanying drawing, the content that execution mode is mentioned is not to restriction of the present utility model.
With reference to shown in Fig. 1, a kind of high-power IGBT gate drivers of the present utility model, comprise: driver module, protection module and electrical isolation module, three is electrically connected with IGBT and extraneous host computer respectively, described electrical isolation module comprises: buffer circuit, drive circuit and grid voltage protective circuit, three is electrically connected successively, and buffer circuit is electrically connected extraneous host computer and receives the pulse signal exported, and grid voltage protective circuit is electrically connected IGBT; Described driver module comprises: drive plate power circuit, under-voltage protecting circuit, and the two is electrically connected, and drive plate power circuit is electrically connected extraneous host computer; Described protection module comprises: control feedback circuit, short-circuit protection circuit, Drive Protecting Circuit, overvoltage crowbar, control feedback circuit and be electrically connected extraneous host computer, and be electrically connected with short-circuit protection circuit, Drive Protecting Circuit and overvoltage crowbar respectively; Short-circuit protection circuit and overvoltage crowbar are also electrically connected IGBT respectively; Drive Protecting Circuit is electrically connected above-mentioned buffer circuit.
Wherein, buffer circuit in electrical isolation module, is received the two-way pulse signal (PWM) that host computer exports, is amplified by drive circuit to signal; within voltage is limited in 20V by grid voltage protective circuit, ensure that control circuit by the interference of power circuit and can not affect.
Drive plate power circuit receipts host computer in driver module exports ± 24V square wave power; and pressure regulation exports+15V and-12V voltage; through under-voltage protecting circuit by voltage control at 13.5V ~ 16.5V ,-10.5V ~-13.5V, then export to electrical isolation module and protection module.
By detecting IGBT DC bus cathode voltage, short-circuit protection circuit protection in protection module determines whether IGBT is shorted, when extraneous busbar voltage exceedes set point 1950V, overvoltage crowbar open circuit is protected; Drive Protecting Circuit detects the PWM waveform that buffer circuit exports, and judges whether to be consistent with former PWM waveform, if inconsistent, protects; Control feedback circuit output feedback signal to host computer, this feedback signal comprises: 1. when just powering on, extraneous bus powers on more than feeding back a 15V height point product signal during 160V; 2.PWM Waveform Input control IGBT opens, then export a low level signal, otherwise then export high level signal; 3. in above-mentioned short-circuit protection circuit, Drive Protecting Circuit, overvoltage crowbar, under-voltage protecting circuit, any one circuit breaks down, then export 7.5V signal.
Driver of the present utility model provides enough large drive current for IGBT switch, ensures that IGBT can reliably turn on and off at the control; When IGBT be short-circuited or overcurrent time, driver can the shortest time turn off IGBT, protection power device; Ensure that control circuit by the interference of power circuit and can not affect; Guarantee that it is low level that two-way exports simultaneously, prevents straight-through phenomenon when inputting two pulse signals simultaneously for time high.
The utility model embody rule approach is a lot; the above is only preferred implementation of the present utility model; should be understood that; for those skilled in the art; under the prerequisite not departing from the utility model principle; can also make some improvement, these improvement also should be considered as protection range of the present utility model.

Claims (3)

1. a high-power IGBT gate drivers, it is characterized in that, comprise: driver module, protection module and electrical isolation module, three is electrically connected with IGBT and extraneous host computer respectively, described electrical isolation module comprises: buffer circuit, drive circuit and grid voltage protective circuit, three is electrically connected successively, and buffer circuit is electrically connected extraneous host computer and receives the pulse signal exported, and grid voltage protective circuit is electrically connected IGBT; Described driver module comprises: drive plate power circuit, under-voltage protecting circuit, and the two is electrically connected, and drive plate power circuit is electrically connected extraneous host computer; Described protection module comprises: control feedback circuit, short-circuit protection circuit, Drive Protecting Circuit, overvoltage crowbar, control feedback circuit and be electrically connected extraneous host computer, and be electrically connected with short-circuit protection circuit, Drive Protecting Circuit and overvoltage crowbar respectively; Short-circuit protection circuit and overvoltage crowbar are also electrically connected IGBT respectively; Drive Protecting Circuit is electrically connected above-mentioned buffer circuit.
2. high-power IGBT gate drivers according to claim 1, is characterized in that, described drive plate power circuit reception host computer exports ± 24V square wave power, and pressure regulation exports+15V and-12V voltage.
3. high-power IGBT gate drivers according to claim 1 and 2, is characterized in that, the voltage that described under-voltage protecting circuit controls to export is: 13.5V ~ 16.5V ,-10.5V ~-13.5V.
CN201521030260.XU 2015-12-11 2015-12-11 High -power IGBT gate drive ware Active CN205178855U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201521030260.XU CN205178855U (en) 2015-12-11 2015-12-11 High -power IGBT gate drive ware

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201521030260.XU CN205178855U (en) 2015-12-11 2015-12-11 High -power IGBT gate drive ware

Publications (1)

Publication Number Publication Date
CN205178855U true CN205178855U (en) 2016-04-20

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CN201521030260.XU Active CN205178855U (en) 2015-12-11 2015-12-11 High -power IGBT gate drive ware

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107733409A (en) * 2017-10-27 2018-02-23 南京轨道交通系统工程有限公司 A kind of high-power IGBT drive circuit
WO2019170035A1 (en) * 2018-03-08 2019-09-12 精进电动科技股份有限公司 Igbt drive circuit for motor controller, and motor controller

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107733409A (en) * 2017-10-27 2018-02-23 南京轨道交通系统工程有限公司 A kind of high-power IGBT drive circuit
CN107733409B (en) * 2017-10-27 2020-11-10 南京轨道交通系统工程有限公司 High-voltage high-power IGBT drive circuit
WO2019170035A1 (en) * 2018-03-08 2019-09-12 精进电动科技股份有限公司 Igbt drive circuit for motor controller, and motor controller
US11323112B2 (en) 2018-03-08 2022-05-03 Jing-Jin Electric Technologies Co., Ltd IGBT drive circuit for motor controller, and motor controller

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