CN204205926U - Parallel connection type resonance inverter IGBT drive circuit - Google Patents
Parallel connection type resonance inverter IGBT drive circuit Download PDFInfo
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- CN204205926U CN204205926U CN201420742929.7U CN201420742929U CN204205926U CN 204205926 U CN204205926 U CN 204205926U CN 201420742929 U CN201420742929 U CN 201420742929U CN 204205926 U CN204205926 U CN 204205926U
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Abstract
The utility model provides a kind of parallel connection type resonance inverter IGBT drive circuit, it comprise be serially connected with IGBT successively between signal input part and its gate pole signal isolated location, pulse shaping unit, push-pull amplifier circuit and current-limiting resistance Rg, and the active clamp circuit be connected between the collector electrode of IGBT and gate pole, also comprise the insulating power supply be connected on described push-pull amplifier circuit.Parallel connection type resonance inverter IGBT drive circuit described in the utility model, can prevent IGBT device to lose efficacy because of overvoltage, make circuit protection function perfect.
Description
Technical field
The utility model relates to electric and electronic technical field, particularly a kind of parallel connection type resonance inverter IGBT drive circuit.
Background technology
Parallel connection type resonance inverter belongs to current source inverter, and its energy is provided by large inductance, is equivalent to current source, and when it breaks down, short circuit overcurrent protective ratio is easier to, but electric voltage over press protective ratio is more difficult.Because current source cannot open circuit operation, All Drives inversion control impuls under any state all cannot turn off.No matter be intelligent integrated IGBT driver in the market; or IGBT driving chip, it all designs for voltage source inverter, has overcurrent protection function; and can locking pulse when driver detects fault, but its function cannot use in current source inverter.Parallel connection type resonance inverter is in real work, and easy angle of arrival exception or load open circuit, because major loop exists lead-in inductance, thus can cause IGBT two ends to produce due to voltage spikes, IGBT overvoltage was lost efficacy.And overvoltage protection link is placed in major loop side by existing parallel-type converter mostly, namely utilize to the detection of DC bus overvoltage to protect IGBT power device, this protection rapidity and accuracy are all difficult to ensure, for IGBT overvoltage protection limited efficiency.
Utility model content
In view of this, the utility model is intended to propose a kind of parallel connection type resonance inverter IGBT drive circuit, IGBT device can be prevented to lose efficacy because of overvoltage, make circuit protection function perfect.
For achieving the above object, the technical solution of the utility model is achieved in that
A kind of parallel connection type resonance inverter IGBT drive circuit, it comprise be serially connected with IGBT successively between signal input part and its gate pole signal isolated location, pulse shaping unit, push-pull amplifier circuit and current-limiting resistance Rg, and the active clamp circuit be connected between the collector electrode of IGBT and gate pole, also comprise the insulating power supply be connected on described push-pull amplifier circuit.
Further, described active clamp circuit comprises the transient voltage suppressor D1, diode D2 and the current-limiting resistance Rs that are serially connected with successively between the collector electrode of IGBT and gate pole.
Further, described push-pull circuit exports when no signal inputs as high level state.
Further, described signal isolated location is light-coupled isolation module.
Further, the line under-voltage protection module be connected on described insulating power supply output is also comprised.
Relative to prior art, the utility model has following advantage:
This parallel connection type resonance inverter IGBT drive circuit, the reliability of drive circuit drive singal can be ensured by signal isolated location, pulse shaping unit, by being connected to the active clamp circuit between IGBT collector electrode and its gate pole, effectively prevent IGBT breakdown because of overtension when can there is due to voltage spikes at IGBT two ends, thus effectively ensure that IGBT device.Isolated location adopts light-coupled isolation module to realize effective isolation of input signal, to ensure circuit safety.Arranging line under-voltage protection module can make the function of drive circuit more perfect.
Accompanying drawing explanation
The accompanying drawing forming a part of the present utility model is used to provide further understanding of the present utility model, and schematic description and description of the present utility model, for explaining the utility model, is not formed improper restriction of the present utility model.In the accompanying drawings:
Fig. 1 is the structured flowchart of the parallel connection type resonance inverter IGBT drive circuit described in the utility model embodiment;
Fig. 2 is the circuit theory diagrams of the parallel connection type resonance inverter IGBT drive circuit described in the utility model embodiment;
Embodiment
It should be noted that, when not conflicting, the embodiment in the utility model and the feature in embodiment can combine mutually.
Below with reference to the accompanying drawings and describe the utility model in detail in conjunction with the embodiments.
The present embodiment relates to a kind of parallel connection type resonance inverter IGBT drive circuit, as shown in Figures 1 and 2, it comprise be serially connected with IGBT successively between signal input part and its gate pole signal isolated location, pulse shaping unit, push-pull amplifier circuit and current-limiting resistance Rg, and the active clamp circuit be connected between the collector electrode of IGBT and gate pole, also comprise the insulating power supply be connected on push-pull amplifier circuit.
In the present embodiment, signal isolated location can be and adopts light-coupled isolation module TLP250 to isolate input signal, and its maximum operating frequency is 50kHz.Pulse shaping unit can realize the Shape correction to signal, and push-pull amplifier circuit is used for the power amplification of input signal, effectively to drive IGBT device.Power acquisition insulating power supply in the present embodiment on push-pull amplifier circuit effectively can ensure the reliability of circuit; and be the usability ensureing drive circuit further; also can connect on the output of insulating power supply and arrange a not shown line under-voltage protection module, this under-voltage protective module can adopt existing conventional under-voltage protecting circuit.
Active clamp circuit in the present embodiment comprises the transient voltage suppressor D1, diode D2 and the current-limiting resistance Rs that are serially connected with successively between the collector electrode of IGBT and gate pole.When open circuit appears in inverter operating angle exception or output, there is large inductance in the DC output end due to current source inverter, and the energy that inductance is stored can discharge by nonpassage, and now the two ends of inverter power device IGBT instantaneously can occur overvoltage.When IGBT collector voltage raises, the transient voltage suppressor D1 of active clamp circuit is breakdown, breakdown current flows into the gate pole of IGBT by resistance Rs, gate voltage lifting, thus the collector voltage of IGBT is reduced, reduce due to voltage spikes, effectively prevent IGBT to lose efficacy because of overvoltage.
This parallel resonance device IGBT drive circuit is by arranging active clamp circuit, when there is due to voltage spikes in IGBT two ends, can effectively prevent IGBT breakdown because of overtension, also be provided with signal isolated location and pulse shaping unit in circuit simultaneously, and use insulating power supply etc., thus ensure that reliability and the usability of drive circuit.
The foregoing is only preferred embodiment of the present utility model; not in order to limit the utility model; all within spirit of the present utility model and principle, any amendment done, equivalent replacement, improvement etc., all should be included within protection range of the present utility model.
Claims (5)
1. a parallel connection type resonance inverter IGBT drive circuit, it is characterized in that comprising be serially connected with IGBT successively between signal input part and its gate pole signal isolated location, pulse shaping unit, push-pull amplifier circuit and current-limiting resistance Rg, and the active clamp circuit be connected between the collector electrode of IGBT and gate pole, also comprise the insulating power supply be connected on described push-pull amplifier circuit.
2. parallel connection type resonance inverter IGBT drive circuit according to claim 1, is characterized in that: described active clamp circuit comprises the transient voltage suppressor D1, diode D2 and the current-limiting resistance Rs that are serially connected with successively between the collector electrode of IGBT and gate pole.
3. parallel connection type resonance inverter IGBT drive circuit according to claim 1, is characterized in that: described push-pull amplifier circuit is when no signal inputs, and it exports as high level state.
4. parallel connection type resonance inverter IGBT drive circuit according to claim 2, is characterized in that: described signal isolated location is light-coupled isolation module.
5. parallel connection type resonance inverter IGBT drive circuit according to claim 1, is characterized in that: also comprise the line under-voltage protection module be connected on described insulating power supply output.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420742929.7U CN204205926U (en) | 2014-12-02 | 2014-12-02 | Parallel connection type resonance inverter IGBT drive circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420742929.7U CN204205926U (en) | 2014-12-02 | 2014-12-02 | Parallel connection type resonance inverter IGBT drive circuit |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN204205926U true CN204205926U (en) | 2015-03-11 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201420742929.7U Active CN204205926U (en) | 2014-12-02 | 2014-12-02 | Parallel connection type resonance inverter IGBT drive circuit |
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| CN (1) | CN204205926U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114884323A (en) * | 2022-05-25 | 2022-08-09 | 陕西航空电气有限责任公司 | IGBT power module drive circuit |
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2014
- 2014-12-02 CN CN201420742929.7U patent/CN204205926U/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114884323A (en) * | 2022-05-25 | 2022-08-09 | 陕西航空电气有限责任公司 | IGBT power module drive circuit |
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