CN205157753U - Diaxon magnetism resistance transducer partly overturns - Google Patents
Diaxon magnetism resistance transducer partly overturns Download PDFInfo
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- CN205157753U CN205157753U CN201520662268.1U CN201520662268U CN205157753U CN 205157753 U CN205157753 U CN 205157753U CN 201520662268 U CN201520662268 U CN 201520662268U CN 205157753 U CN205157753 U CN 205157753U
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Abstract
The utility model provides a diaxon magnetism resistance transducer partly overturns, obtains in 180 degrees angle phase places of X -Y plane internal rotation for another section including two sections, one of them section including the at least a set of section that is located the X -Y plane, every group section, and arbitrary section all includes two sets of magneto resistor sensing unit clusters that have the ferromagnetic reference layer magnetization direction of quadrature, and magneto resistor sensing unit cluster constitutes by at least two magneto resistor sensing units, and lieing in two magneto resistor sensing unit crosstalks in the section and connecting into two at least unipolar push -pull type magneto resistor sensing unit electric bridges that have the sensitive orientation in quadrature magnetic field, arbitrary push -pull type magneto resistor sensing unit electric bridge is the magneto resistor sensing unit cluster that has a mutually antiferromagnetic reference layer magnetization direction including lieing in two sections respectively on all, and diaxon magneto resistor sensing unit electric bridge can be linear magnetism resistance transducer together and perhaps be angle magnetism resistance transducer together, the utility model has the advantages of it is small in quantity to cut into slices, and easily install the position, simple structure, low -power consumption.
Description
Technical field
The utility model relates to magnetic sensor field, particularly one half upset diaxon magnetic resistance sensor.
Background technology
Diaxon magnetic resistance sensor is as diaxon linear transducer or diaxon angular transducer, for measuring the external magnetic field information of two orthogonal directionss as X and Y-direction, wherein diaxon linear transducer is for measuring external magnetic field magnetic field intensity in x and y direction, and diaxon angular transducer is for measuring the angle information in external magnetic field and X and Y-direction, and be widely used in magnetic sensor designs field.
Diaxon magnetic resistance sensor comprises two uniaxial magnetic electric resistance sensors, each uniaxial magnetic electric resistance sensor adopts push-pull type bridge structure to export with the signal strengthening magnetic resistance sensor usually, and push-pull type electric bridge comprises and pushes away magneto-resistor sensing unit and draw magneto-resistor sensing unit composition, and there is contrary magnetic-field-sensitive direction respectively.
For the diaxon magnetic resistance sensor of TMR or GMR type, usual employing has single magnetic-field-sensitive direction such as the magneto-resistor sensing unit of X-axis and cuts into slices by one, overturn 90 respectively, 180 and 270 degree, cut into slices with the magneto-resistor sensing unit that pushes away that this obtains Y-axis, draw the section of magneto-resistor sensing unit, and the magnetic resistance sensor unit that pushes away of X-axis is cut into slices and draws the section of magneto-resistor sensing unit, therefore, diaxon magnetic resistance sensor adopts the method for upset section at least will need 4 sections, its advantage is, preparation method is simple, only need a section, and a corresponding ferromagnetic reference layer structure, and shortcoming is, operation 4 section is needed accurately to locate in same plane, add the possibility of the measuring accuracy loss of the sensor caused due to misoperation.
On the other hand, the inverse ferric magnetosphere of method to magneto-resistor sensing unit of laser magnetic-field annealing is adopted to scan, change the direction in magnetic field simultaneously, can be implemented in the manufacture that four of the diaxon magneto-resistor sensing unit in single section have orthogonally oriented magneto-resistor sensing unit, but its shortcoming is to adopt the method for laser scanning heating to realize very long to the process time consumption of single magneto-resistor sensing unit.
Adopt the design of the ferromagnetic reference layer of multi-layer film structure, by changing the number of plies of the multilayer film formed with the ferromagnetic layer of inverse ferric magnetosphere coupling interaction and metal spacing layer, one of them is odd-level, another is the method for even level, what can realize mutually antiferromagnetic reference layer pushes away magneto-resistor sensing unit and the manufacture of drawing magneto-resistor sensing unit, for the orientation of orthogonal ferromagnetic reference layer, two kinds of different inverse ferric magnetosphere AF1 and AF2 can be passed through, realized by twice magnetic field thermal annealing, its shortcoming is, owing to needing when deposit multilayer film to introduce at least four kinds of multi-layer film structures and twice magnetic-field annealing, add the complicacy of micro fabrication.
Utility model content
For the respective merits and demerits of above single-chip method and turning-over of chip method, the utility model proposes a kind of half upset diaxon magnetic resistance sensor, by the magneto-resistor sensing unit that preparation two in same section is orthogonal, utilize simultaneously and turnback is turned over to the magneto-resistor sensing unit obtaining corresponding push arm He draw bow to this section, its advantage is, do not need with reference to multi-layer film structure order to realize push arm and to draw bow, only need twice annealing to realize orthogonal ferromagnetic reference layer orientation, and the quantity of upset section is only two, thus simplify manufacturing process and slice position alignment procedures, improve the manufacture efficiency of diaxon magnetic resistance sensor.
The one that the utility model proposes half upset diaxon magnetic resistance sensor, comprises at least one group of section being positioned at X-Y plane;
Often organize section and comprise two sections, one of them cuts into slices as another section obtains in X-Y plane inward turning turnback angular phase, arbitrary section includes the magneto-resistor sensing unit string that two groups have orthogonal ferromagnetic reference layer direction of magnetization, and described magneto-resistor sensing unit string is formed by least two magneto-resistor sensing units; And the described magneto-resistor sensing unit crosstalk be positioned in described two sections connects at least two push-pull type magneto-resistor sensing unit electric bridges with quadrature field sensitive direction, arbitrary described push-pull type magneto-resistor sensing unit electric bridge includes the magneto-resistor sensing unit string with mutually antiferromagnetic reference layer direction of magnetization laid respectively in two sections.
Preferably, described magneto-resistor sensing unit is GMR or TMR magneto-resistor sensing unit.
Preferably, described push-pull type magneto-resistor sensing unit electric bridge is linear magnetoresistance sensing unit electric bridge or angle magneto-resistor sensing unit electric bridge.
Preferably, described push-pull type magneto-resistor sensing unit electric bridge is half-bridge, full-bridge or accurate bridge construction.
Preferably, when not having externally-applied magnetic field, it is vertical with the direction of magnetization of ferromagnetic pinning layer that described linear magnetoresistance sensing unit electric bridge makes the direction of magnetization of ferromagnetic free layer by permanent magnet bias, double exchange model, shape anisotropy or their any combination.
Preferably, the ferromagnetic reference layer structure of described magneto-resistor sensing unit electric bridge adopts single stack layer structure or multi-layer film structure;
Described single stack layer structure comprises the inverse ferric magnetosphere sequentially arranged, ferromagnetic reference layer;
Described multi-layer film structure comprises the inverse ferric magnetosphere sequentially arranged, ferromagnetic layer, metal spacing layer, ferromagnetic reference layer, nonmetal wall, the ferromagnetic free layer that are positioned at middle layer, or described multi-layer film structure comprises the inverse ferric magnetosphere sequentially arranged, ferromagnetic layer, metal spacing layer, ferromagnetic layer, metal spacing layer, ferromagnetic reference layer, nonmetal wall, the ferromagnetic free layer that are positioned at bottom.
Preferably, ferromagnetic reference layer corresponding inverse ferric magnetosphere 1 and the inverse ferric magnetosphere 2 respectively of the described orthogonal described two groups of magneto-resistor sensing unit strings be positioned in same section, anneal respectively under being used in the obstruct temperature of described inverse ferric magnetosphere 1 and inverse ferric magnetosphere 2, and in cooling procedure, apply two external magnetic fields of orthogonal directions respectively, thus form described two groups of magneto-resistor sensing unit strings with described orthogonal ferromagnetic reference layer direction of magnetization.
Preferably, half described upset diaxon magnetic resistance sensor also comprises ASIC special IC, is electrically connected between described ASIC and described push-pull type magneto-resistor sensing unit electric bridge.
Preferably, described ASIC special IC comprises ESD anti-static protection circuit.
Preferably, described ASIC special IC comprises ESD anti-static protection circuit and the treatment circuit for calculating the output of described push-pull type magneto-resistor sensing unit electric bridge exports in digital form to make it.
Preferably, on the pin that the input and output side of described push-pull type magneto-resistor sensing unit electric bridge is connected to is positioned on same lead frame by going between.
Preferably, described lead frame and described push-pull type magneto-resistor electric bridge are sealed in plastics to form the semiconductor packages of standard.
Preferably, connected by binding or connected by TSV soldering tip between described two sections.
Accompanying drawing explanation
Fig. 1 is half upset diaxon magnetic resistance sensor structure one;
Fig. 2 is half upset diaxon magnetic resistance sensor structure two;
Fig. 3 (a), 3 (b) are half upset diaxon magnetic resistance sensor push-pull type full bridge structure figure;
Fig. 4 is TMR or GMR magneto-resistor sensing unit multi-layer film structure figure;
Fig. 5 (a), 5 (b) are linear magnetoresistance sensing unit magnetization distribution plan;
Fig. 6 (a), 6 (b) are angle magneto-resistor sensing unit magnetization distribution plan;
Fig. 7 be half upset diaxon magnetic resistance sensor structure one section between electrical connection graph;
Fig. 8 be half upset diaxon magnetic resistance sensor structure two section between electrical connection graph;
Fig. 9 be the half upset diaxon magnetic resistance sensor comprising ASIC section between electrical connection graph;
Figure 10 is TMR or GMR ferromagnetic reference layer structure one figure;
Figure 11 is TMR or GMR ferromagnetic reference layer structure two figure;
Figure 12 (a), 12 (b) are half upset diaxon magnetic resistance sensor X-axis magneto-resistor sensing unit and the ferromagnetic reference layer structure figure of Y-axis magneto-resistor sensing unit;
Figure 13 is LASER HEAT auxiliary magnetic field annealing device figure;
Figure 14 is diaxon list section distribution plan on wafer of half upset diaxon magnetic resistance sensor.
Embodiment
Below with reference to the accompanying drawings and in conjunction with the embodiments, describe the utility model in detail.
Embodiment one
Two kinds of structural drawing of the half upset diaxon magnetic resistance sensor that Fig. 1 and Fig. 2 proposes for the utility model, half upset diaxon magnetic resistance sensor 1 and 5 includes the section that two are positioned at X-Y plane, wherein half upset diaxon magnetic resistance sensor 1 comprises section 2 and 2 (1), half upset diaxon magnetic resistance sensor 5 comprises section 6 and 6 (1), and one of them cuts into slices as another section obtains in X-Y plane inward turning turnback phase place, namely cut into slices 2 and 2 (1), section 6 and 6 (1) all can be revolved turnback phase place by various and obtained, on the other hand, the arbitrary section formed in Fig. 1 and Fig. 2 in two sections of half upset diaxon magnetic resistance sensor includes two mutually orthogonal uniaxial magnetic electric resistance sensors, such as section 2 and 2 (1) includes X-axis magneto-resistor sensing unit string 3 and Y-axis magnetic resistance sensor unit strings 4, section 6 and 6 (1) includes X-axis magneto-resistor sensing unit string 7 and Y-axis magneto-resistor sensing unit string 8, wherein in Fig. 1, X magneto-resistor sensing unit string 3 and the neighbour arrangement of Y-axis magneto-resistor sensing unit string 4, one of them magneto-resistor sensing unit displacement is in the side of another magneto-resistor sensing unit string.In Fig. 2, X-axis magneto-resistor sensing unit string 7 and Y-axis magneto-resistor sensing unit string are alternately arranged, and the subelement 81 and 82 that wherein subelement 71 and 72 that comprises of X-axis magneto-resistor sensing unit string 7 and Y-axis magneto-resistor sensing unit string 8 comprise replaces mutually, in Fig. 1 and Fig. 2, two sections 2 and 2 (1), be electrically connected between X-axis magneto-resistor sensing unit string in section 6 and 6 (1) the push-pull type X-axis magneto-resistor sensing unit electric bridge be connected into as shown in Fig. 3 (a), the crosstalk of Y-axis magneto-resistor sensing unit connects into the push-pull type Y-axis magneto-resistor sensing unit electric bridge as shown in Fig. 3 (b), X-axis magneto-resistor sensing unit in one of them section and another cut into slices on X-axis magneto-resistor sensing unit be electrically connected to each other and constitute push arm magneto-resistor sensing unit, and the Y magneto-resistor sensing unit in a section and the Y-axis magneto-resistor sensing unit in another section are electrically connected to each other and constitute magneto-resistor sensing unit of drawing bow, Fig. 3 is push-pull type full bridge structure, in fact can also be push-pull type half-bridge or accurate bridge construction.
X-axis magnetic resistance sensor included by half upset diaxon magnetic resistance sensor and Y-axis magnetic resistance sensor can be all linear magnetoresistance sensor, or be all angle magnetic resistance sensor, its magneto-resistor sensing unit is GMR or TMR type, its magneto-resistor sensing unit structures as shown in Figure 4, multi-layer film structure 9 comprises inverse ferric magnetosphere 12 all from top to bottom successively, ferromagnetic reference layer 13, non-magnetic separation layer 14, ferromagnetic free layer 15, wherein 10 is the multi-layer film structure of corresponding angle magnetic resistance sensor, the direction of magnetization 16 of its ferromagnetic reference layer 13 is the magnetic-field-sensitive direction of angular transducer, the direction of magnetization 17 of ferromagnetic free layer 15 freely can be rotated along outer magnetic field direction, and 11 is the multi-layer film structure of corresponding linear magnetoresistance sensing unit, when 0 external magnetic field, the direction of magnetization 18 of its ferromagnetic reference layer 13 is mutually vertical with the direction of magnetization 19 of ferromagnetic free layer 15, now pass through permanent magnet bias, double exchange model, shape anisotropy or their any combination make the direction of magnetization of ferromagnetic free layer vertical with the direction of magnetization of ferromagnetic reference layer.
Fig. 5 and Fig. 6 is respectively shape corresponding to linear magnetoresistance sensing unit and angle magneto-resistor sensing unit, wherein linear magnetoresistance sensing unit is elliptical shape, its ferromagnetic reference layer direction of magnetization is ellipse short shaft direction, and free layer direction of magnetization is along long axis direction, 5 (a) and 5 (b) is respectively X-axis linear magnetoresistance sensing unit and Y-axis linear magnetoresistance sensing unit, and angle magneto-resistor sensing unit is generally circular, its reference layer direction of magnetization is magnetic-field-sensitive direction, Fig. 6 (a) and 6 (b) are respectively X-axis angle magneto-resistor sensing unit and Y-axis angle magneto-resistor sensing unit.
Embodiment two
Be described for the electrical connection of angle magneto-resistor sensing unit double upset diaxon magnetic resistance sensor below, the electrical connection graphs of two sections that Fig. 7 is the X-axis magneto-resistor sensing unit shown in corresponding diagram 2 and the cross arrangement of Y-axis magneto-resistor sensing unit, wherein 21 and 23 brachium pontis being respectively corresponding Y-axis magneto-resistor sensing unit electric bridge, 22 and 24 two of being respectively corresponding X-axis magneto-resistor sensing unit electric bridge push away brachium pontis, wherein 20 (1) be 20 relatively revolve turnback, thus in 20 (1), obtain X-axis magneto-resistor sensing unit electric bridge and Y-axis magneto-resistor sensing unit electric bridge draw brachium pontis, connected by lead-in wire 25 between two sections, wherein 26 is pin, the output input pin of corresponding diaxon magnetic resistance sensor comprises Vbias, GND, Vax+, Vax-, Vby+, Vby-.
Fig. 8 is the electrical connection graph between the X-axis magneto-resistor sensing unit of corresponding diagram 1 and two sections of the neighbour arrangement of Y-axis magneto-resistor sensing unit, wherein two of 61 and 62 corresponding Y-axis magneto-resistor sensing unit electric bridges push away brachium pontis, 63 and 64 is that two of corresponding X-axis magneto-resistor sensing unit electric bridge push away brachium pontis, section 60 and 61 is corresponding two sections of mutually revolving turnback phase place, connected by lead-in wire 65 between two sections, 66 is pin, the output input pin of same corresponding diaxon magnetic resistance sensor comprises Vbias, GND, Vax+, Vax-, Vby+, Vby-.
Fig. 9 is the diaxon magnetic resistance sensor comprising ASIC integrated circuit (IC) chip, wherein 91 and 92 is the section comprising X-axis magneto-resistor sensing unit and Y-axis magneto-resistor sensing unit of mutually revolving turnback phase place, 93 is ASIC integrated circuit (IC) chip, two sections 91 are connected with ASIC integrated circuit 93 respectively by lead-in wire 94 with 92, ASIC special IC 93 comprises ESD anti-static protection circuit and exports in digital form to make it for the treatment circuit that the output of described push-pull type magneto-resistor electric bridge is carried out calculating, ASIC integrated circuit 93 connects Vbias, GND, Vx, Vy is corresponding power respectively, ground, X-axis outputs signal, Y-axis outputs signal.
Figure 10-12 is respectively the multi-layer film structure figure with different ferromagnetic reference layer of corresponding diaxon magneto-resistor sensing unit, wherein in Figure 10, ferromagnetic reference layer structure adopts the mono-stack layer structure of inverse ferric magnetosphere AF/ ferromagnetic layer FM, in Figure 11, ferromagnetic reference layer structure adopts the multi-layer film structure of inverse ferric magnetosphere AF/ ferromagnetic layer FM/ metallic spacer/ferromagnetic layer FM, Figure 12 (a) and 12 (b) are respectively the ferromagnetic reference layer structure of the magneto-resistor sensing unit of corresponding X-axis magnetic resistance sensor and Y-axis magnetic resistance sensor, wherein inverse ferric magnetosphere AF1 is mutually vertical with the magnetization direction of inverse ferric magnetosphere AF2.
Figure 13 is the LASER HEATING auxiliary annealing device of X-axis magneto-resistor sensing unit and the magnetic multilayer films structure of the difference ferromagnetic reference layer orientation of Y-axis magneto-resistor sensing unit in the single section of half upset diaxon magnetic resistance sensor, comprise, lasing light emitter 100, for launching the laser beam 105 of aiming at thin magnetic film 103, optical attenuator 107, be arranged on the rear end of the laser beam 105 sent via lasing light emitter 100, reflective mirror 106, for changing the direction of propagation of the laser beam 105 after decaying via optical attenuator 107, focusing objective len 101, carry out being focused into hot spot for nyctitropic laser beam 105 will be changed via reflective mirror 106, moveable platform 102, it includes the fixture for clamping thin magnetic film 103, and the electromagnet 108 and 109 of two orthogonal directionss.In addition, also comprise CCD camera 99, reflective mirror 106 has a seam, hot spot is aimed at thin magnetic film 103 by the gap of reflective mirror 106 to regulate reflective mirror 106 by CCD camera 99, and wherein 104 for entering the light of CCD camera 99.
By the laser assisted thermal annealing device shown in Figure 13, by the movement of mobile platform 102, laser facula is directly selected the magnetic multilayer films of X-axis magneto-resistor sensing unit and Y-axis magneto-resistor sensing unit, and carry out being heated rapidly to more than the obstruct temperature of inverse ferric magnetosphere, and then in cooling procedure, start bidirectional electromagnet 108 and 109, thus directly determine the direction of magnetization of each magneto-resistor sensing unit, like this, the X-axis magneto-resistor leaflet unit in single section and Y-axis magneto-resistor sensing unit can directly be obtained.Therefore, by means of laser assisted thermal annealing device, deposition magnetic multilayer films on a single chip has identical sedimentary sequence.
Figure 14 is the distribution plan of magneto-resistor sensing unit on wafer 200 of two kinds of different orientation X in the single section of corresponding half upset diaxon magnetic resistance sensor and Y-axis, in order to ensure the homogeneity of difference in distribution on wafer, need to make the multilayer film cell distribution in various different reference iron magnetosphere direction in different regions, 201 inverse ferric magnetospheres being expressed as Y-axis orientation in figure, 202 is the inverse ferric magnetosphere of X-axis orientation, be distributed in the zones of different on wafer 200, by depositing the different sequence of different ferromagnetic layers and metal level on inverse ferric magnetosphere, thus determine orthogonal X-axis, Y-axis orientation, equally also in different regions, the graphical needs of tunneling junction cell are unified after all deposit multilayer film sequences and orientation complete to carry out.
Except laser assisted thermal annealing, can also by needing to sink to the bottom 2 kinds of different inverse ferric magnetosphere AF1 and AF2 on same wafer, and two kinds of different magnetic-field annealing temperature and orthogonal annealing magnetic direction are needed for AF1 and AF2, suppose that in AF1 and AF2, wherein a kind of obstruct temperature is Tb1 and Tb2, wherein Tb1>Tb2, then during magnetic-field annealing, first magnetic-field annealing is carried out to Tb1, obtain its X magnetic direction, then magnetic-field annealing is carried out to Tb2, obtain Y magnetic-field annealing, thus in same section, obtain X-axis magnetic resistance sensor unit and Y-axis magneto-resistor sensing unit.
The foregoing is only preferred embodiment of the present utility model, be not limited to the utility model, for a person skilled in the art, the utility model can have various modifications and variations.All within spirit of the present utility model and principle, any amendment done, equivalent replacement, improvement etc., all should be included within protection domain of the present utility model.
Claims (13)
1. a half upset diaxon magnetic resistance sensor, is characterized in that, comprise at least one group of section being positioned at X-Y plane;
Often organize section and comprise two sections, one of them cuts into slices as another section obtains in X-Y plane inward turning turnback angular phase, arbitrary section includes the magneto-resistor sensing unit string that two groups have orthogonal ferromagnetic reference layer direction of magnetization, and described magneto-resistor sensing unit string is formed by least two magneto-resistor sensing units; And the described magneto-resistor sensing unit crosstalk be positioned in described two sections connects at least two push-pull type magneto-resistor sensing unit electric bridges with quadrature field sensitive direction, arbitrary described push-pull type magneto-resistor sensing unit electric bridge includes the magneto-resistor sensing unit string with mutually antiferromagnetic reference layer direction of magnetization laid respectively in two sections.
2. one according to claim 1 half upset diaxon magnetic resistance sensor, described magneto-resistor sensing unit is GMR or TMR magneto-resistor sensing unit.
3. one according to claim 1 half upset diaxon magnetic resistance sensor, it is characterized in that, described push-pull type magneto-resistor sensing unit electric bridge is linear magnetoresistance sensing unit electric bridge or angle magneto-resistor sensing unit electric bridge.
4. one according to claim 1 half upset diaxon magnetic resistance sensor, it is characterized in that, described push-pull type magneto-resistor sensing unit electric bridge is half-bridge, full-bridge or accurate bridge construction.
5. one according to claim 3 half upset diaxon magnetic resistance sensor, it is characterized in that, when not having externally-applied magnetic field, it is vertical with the direction of magnetization of ferromagnetic pinning layer that described linear magnetoresistance sensing unit electric bridge makes the direction of magnetization of ferromagnetic free layer by permanent magnet bias, double exchange model, shape anisotropy or their any combination.
6. one according to claim 3 half upset diaxon magnetic resistance sensor, it is characterized in that, the ferromagnetic reference layer structure of described magneto-resistor sensing unit electric bridge adopts single stack layer structure or multi-layer film structure;
Described single stack layer structure comprises the inverse ferric magnetosphere sequentially arranged, ferromagnetic reference layer;
Described multi-layer film structure comprises the inverse ferric magnetosphere sequentially arranged, ferromagnetic layer, metal spacing layer, ferromagnetic reference layer, nonmetal wall, the ferromagnetic free layer that are positioned at middle layer, or described multi-layer film structure comprises the inverse ferric magnetosphere sequentially arranged, ferromagnetic layer, metal spacing layer, ferromagnetic layer, metal spacing layer, ferromagnetic reference layer, nonmetal wall, the ferromagnetic free layer that are positioned at bottom.
7. one according to claim 6 half upset diaxon magnetic resistance sensor, it is characterized in that, ferromagnetic reference layer corresponding inverse ferric magnetosphere (1) and the inverse ferric magnetosphere (2) respectively of the described orthogonal described two groups of magneto-resistor sensing unit strings be positioned in same section, anneal respectively at the obstruct temperature of described inverse ferric magnetosphere (1) and inverse ferric magnetosphere (2), and in cooling procedure, apply two external magnetic fields of orthogonal directions respectively, thus form described two groups of magneto-resistor sensing unit strings with described orthogonal ferromagnetic reference layer direction of magnetization.
8. one according to claim 1 half upset diaxon magnetic resistance sensor, is characterized in that, also comprise ASIC special IC, be electrically connected between described ASIC and described push-pull type magneto-resistor sensing unit electric bridge.
9. one according to claim 8 half upset diaxon magnetic resistance sensor, it is characterized in that, described ASIC special IC comprises ESD anti-static protection circuit.
10. one according to claim 8 half upset diaxon magnetic resistance sensor; it is characterized in that, described ASIC special IC comprises ESD anti-static protection circuit and the treatment circuit for calculating the output of described push-pull type magneto-resistor sensing unit electric bridge exports in digital form to make it.
11. one according to claim 10 half upset diaxon magnetic resistance sensor, is characterized in that, the input and output side of described push-pull type magneto-resistor sensing unit electric bridge is connected to by lead-in wire on the pin that is positioned on same lead frame.
12. one according to claim 11 half upset diaxon magnetic resistance sensor, it is characterized in that, described lead frame and described push-pull type magneto-resistor electric bridge are sealed in plastics to form the semiconductor packages of standard.
13. one according to claim 1 half upset diaxon magnetic resistance sensor, be is characterized in that, connected or connected by TSV soldering tip between described two sections by binding.
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| CN201520662268.1U CN205157753U (en) | 2015-08-28 | 2015-08-28 | Diaxon magnetism resistance transducer partly overturns |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105044631A (en) * | 2015-08-28 | 2015-11-11 | 江苏多维科技有限公司 | Half turning-over dual axle magneto resistance sensor |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105044631A (en) * | 2015-08-28 | 2015-11-11 | 江苏多维科技有限公司 | Half turning-over dual axle magneto resistance sensor |
| WO2017036352A1 (en) * | 2015-08-28 | 2017-03-09 | 江苏多维科技有限公司 | Half turning-over dual-axis magnetoresistive sensor |
| CN105044631B (en) * | 2015-08-28 | 2018-08-07 | 江苏多维科技有限公司 | A kind of half overturning two axial lines magnetic resistance sensor |
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