CN205120297U - Pressure sensor chip - Google Patents
Pressure sensor chip Download PDFInfo
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- CN205120297U CN205120297U CN201520912994.4U CN201520912994U CN205120297U CN 205120297 U CN205120297 U CN 205120297U CN 201520912994 U CN201520912994 U CN 201520912994U CN 205120297 U CN205120297 U CN 205120297U
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- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 claims abstract description 12
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims description 24
- 239000002184 metal Substances 0.000 claims description 15
- 230000000712 assembly Effects 0.000 claims description 10
- 238000000429 assembly Methods 0.000 claims description 10
- 230000001419 dependent effect Effects 0.000 claims description 10
- 230000000694 effects Effects 0.000 abstract description 7
- 239000010408 film Substances 0.000 description 18
- 238000000034 method Methods 0.000 description 7
- 230000004044 response Effects 0.000 description 5
- 238000005452 bending Methods 0.000 description 4
- 238000005538 encapsulation Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 230000008859 change Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 230000003139 buffering effect Effects 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 238000011031 large-scale manufacturing process Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 238000012536 packaging technology Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Landscapes
- Measuring Fluid Pressure (AREA)
Abstract
The utility model relates to a pressure sensor chip is including base, pressure -sensitive unit, cantilever beam and lead wire subassembly. The base has the fretwork, pressure -sensitive unit setting is in the fretwork department of base. Form and/or the form follow in order self to have tortuous structure of cantilever beam in order to favour the fretwork edge the base is located to extend to the fretwork, and with pressure -sensitive unit connection makes pressure -sensitive unit hang in the fretwork department of base. The lead wire subassembly with pressure -sensitive unit connection. The technical effects of the utility model comprises, the influence that pressure -sensitive unit can not receive mechanical stress produces deformation and damaged, and the performance obtains guaranteeing.
Description
Technical field
The utility model belongs to field of micro electromechanical technology, particularly, relates to a kind of micro-electromechanical pressure transducer chip.
Background technology
Micro electronmechanical (MEMS) pressure transducer is a kind of pressure sensor adopting microelectromechanical processes designing and making, can be used for test fluid flow pressure.It is little that MEMS pressure sensor has volume, and reliability is high, with low cost, and be applicable to the feature produced in enormous quantities, therefore have wide market outlook, its application comprises consumer electronics, Aero-Space, automobile, Medical Devices etc.
Pressure sensor chip is a kind of thin-film component, relies on deformation of thin membrane sensitive context pressure, by the detection mode such as pressure-active element or electric capacity, the deflection of film is converted to electric signal.Because film is sensitive element, so the impact being easily subject to external mechanical effect causes the change of detection perform.Such as, in the encapsulation process of pressure sensor chip, owing to there is thermal mismatching phenomenon between sensor and PCB substrate or ceramic substrate, the sensor being subject to mechanical stress effect easily deforms, thus causes membrane structure to be out of shape.Film is once deform, and mechanical property can change, and cannot ensure initial sensed characteristic, the performance of sensor is caused to having a strong impact on.
In the prior art, in order to reduce or eliminate this impact caused due to mechanical stress, need in encapsulation process that technique is accurately optimized and controls to temperature, glue is thick etc.Although this solution can reduce the deflection of film to a certain extent, be the increase in difficulty and the cost of packaging technology, and be not suitable for large-scale production.
In sum, be necessary to improve the structure of pressure sensor chip, the stress that film can not be produced because of the technique such as encapsulation and be out of shape, damaged, ensure the response characteristic of film.
Utility model content
The technical matters that the utility model solves is: pressure-sensitive unit affects by mechanical stress and produces distortion, damaged problem.
According to an aspect of the present utility model, provide a kind of pressure sensor chip, comprising:
Pedestal, described pedestal has hollow out;
Pressure-sensitive unit, described pressure-sensitive unit is arranged on the hollow part of described pedestal;
Semi-girder, described semi-girder is to favour the form at hollow out edge and/or to extend to hollow part from described pedestal with the form self with curved structure, and described semi-girder is connected with described pressure-sensitive unit, makes described pressure-sensitive unit be suspended from the hollow part of described pedestal;
Lead assemblies, described lead assemblies is connected with described pressure-sensitive unit.
Alternatively, described curved structure can be L shape structure, or described curved structure can be arcuate structure, or described curved structure can character form structure for it.
Preferably, described pressure sensor chip comprises four semi-girders.When described curved structure is L shape structure, four described semi-girders preferably form “ Swastika " shape structure, described pressure-sensitive unit is positioned at “ Swastika " center of shape structure.When described curved structure is arcuate structure, four described cantilevers preferably form helical structure, and described pressure-sensitive unit is positioned at the center of helical structure.
In addition, described pressure-sensitive unit can comprise element body, sense film and pressure-active element.Described semi-girder is connected with described element body, and described sense film is arranged on described element body, is formed with inner chamber between described sense film and described element body, and described pressure-active element is arranged on described sense film.
Preferably, described lead assemblies can comprise four metal lead wires, and described pressure-active element can be four voltage dependent resistor (VDR)s, and four described voltage dependent resistor (VDR)s form Wheatstone bridge, often prop up described metal lead wire and are connected with a voltage dependent resistor (VDR) respectively.
Preferably, described metal lead wire can distribute along described semi-girder.
A technique effect of the present utility model is, semi-girder can absorb mechanical stress, thus protection pressure-active element is not by the impact of mechanical stress.
By referring to the detailed description of accompanying drawing to exemplary embodiment of the present utility model, further feature of the present utility model and advantage thereof will become clear.
Accompanying drawing explanation
What form a part for instructions drawings describes embodiment of the present utility model, and together with the description for explaining principle of the present utility model.
Fig. 1 is the vertical view of pressure sensor chip in a kind of specific embodiment of the utility model;
Fig. 2 is the schematic diagram of pressure sensor chip in a kind of specific embodiment of the utility model;
Fig. 3 is the schematic diagram of pressure sensor chip in a kind of specific embodiment of the utility model;
Fig. 4 is the schematic diagram of pressure sensor chip in a kind of specific embodiment of the utility model;
Fig. 5 is the side cross-sectional views of Fig. 1;
Fig. 6 is the side cross-sectional views of pressure-sensitive unit in the utility model specific embodiment.
Embodiment
Various exemplary embodiment of the present utility model is described in detail now with reference to accompanying drawing.It should be noted that: unless specifically stated otherwise, otherwise positioned opposite, the numerical expression of the parts of setting forth in these embodiments and step and numerical value do not limit scope of the present utility model.
Illustrative to the description only actually of at least one exemplary embodiment below, never as any restriction to the utility model and application or use.
The technology and equipment known for person of ordinary skill in the relevant may not discuss in detail, but in the appropriate case, described technology and equipment should be regarded as a part for instructions.
In all examples with discussing shown here, any occurrence should be construed as merely exemplary, instead of as restriction.Therefore, other example of exemplary embodiment can have different values.
It should be noted that: represent similar terms in similar label and letter accompanying drawing below, therefore, once be defined in an a certain Xiang Yi accompanying drawing, then do not need to be further discussed it in accompanying drawing subsequently.
The utility model provides a kind of pressure sensor chip, comprising pedestal, pressure-sensitive unit, semi-girder and lead assemblies.Described pedestal has hollow out, and described pressure-sensitive unit is arranged on the hollow part of described pedestal.Usually, described pressure sensor chip can comprise 2-4 and prop up semi-girder, and semi-girder is that described pressure-sensitive unit provides support, and those skilled in the art, meeting brace summer under the condition of the stable support of pressure-sensitive unit, can design the quantity of semi-girder.Described semi-girder extends from described pedestal to hollow part, and the end of semi-girder is connected with described pressure-sensitive unit, makes pressure-sensitive unit be suspended from the hollow part of described pedestal.Especially, described semi-girder can have curved structure, or can extend to hollow part with the form favouring hollow out edge.Such as, described semi-girder can extend to hollow part perpendicular to hollow out edge, and semi-girder self has bending or bending; Or described semi-girder can be that 30 degree of angles extend to hollow part with hollow out edge.Further, described semi-girder also not only can have curved structure but also extend to hollow part from pedestal with the form favouring hollow out edge, and namely semi-girder is not linearly extend to hollow out center with the direction perpendicular to hollow out edge.Like this, the length of semi-girder is greatly increased, when encapsulating described pressure sensor chip, pedestal can be subject to thermal mismatching produce mechanical stress affect generation deformation, stress can pass on semi-girder, makes semi-girder also produce distortion.But because the length of semi-girder is longer, can absorb mechanical stress by distortion, thus ensure that pressure-sensitive unit can not produce distortion, the performance of pressure-sensitive unit can not be subject to the impact of encapsulation stress.
Concrete, as shown in Figure 1,5, the center of described pedestal 1 can have square hollow out, and described pressure-sensitive unit 2 is arranged on hollow part.In this embodiment, described curved structure is L-type structure, and namely semi-girder 3 entirety is in L-type.Described semi-girder 3 is to extend to hollow part perpendicular to the form at hollow out edge, and at certain position, there is right angle bending, the end of semi-girder 3 is connected to the side of pressure-sensitive unit 2, and the side that pressure-sensitive unit 2 and this semi-girder 3 connect is not relative with the hollow out edge that this semi-girder 3 stretches out.As shown in Figure 1, pressure sensor chip comprises four semi-girders, 3, four semi-girders 3 and stretches out from four limits of square hollow out respectively in this embodiment, forms “ Swastika with pressure-sensitive unit 2 " shape structure, pressure-sensitive unit 2 is positioned at “ Swastika " center of shape structure.This semi-girder unitized construction can provide stable supporting role for gas sensor, and effectively absorbs the stress from all directions.The utility model does not limit the overbending direction of semi-girder, " Swastika " shape structure namely formed can be forward also can be reverse.In addition, the utility model is not also to shape, the position of hollow out; The shape of pressure-sensitive unit; The quantity of semi-girder etc. limit, and those skilled in the art can design these features according to actual conditions.Such as, can be in other embodiments for: described hollow out is not positioned at the center of pedestal, and hollow out and pressure-sensitive unit structure triangular in shape, then can comprise three semi-girders in pressure sensor chip, and the curved structure of semi-girder can be L shape.
Alternatively, the curved structure of described semi-girder 3 can also be arcuate structure or zigzag structure.As shown in Figure 2, described semi-girder 3 can extend to hollow part with the form favouring hollow out edge, and self is curved, and the shaping difficulty of arc semi-girder is relatively low.In such an embodiment, pressure sensor chip can comprise four semi-girders 3, and semi-girder 3 forms helical structure, and described pressure-sensitive unit is positioned at the center of helical structure.Similar with the embodiment of Fig. 1, when the alteration of form of hollow out, pressure-sensitive unit, the quantity of semi-girder also can suitably increase and decrease; Helical structure positive and negative also unrestricted.As shown in Figure 3, described semi-girder 3 to extend to hollow part perpendicular to the form at hollow out edge, self can also have the bending of two places, and form structure in a zigzag, the ability of structure semi-girder absorption stress is stronger in a zigzag.The length of the semi-girder of above two kinds of embodiments also can be highly improved, thus reaches the effect absorbing stress, buffering distortion, protects pressure-sensitive unit not damaged.Those skilled in the art can be multi-form according to factor designs such as the shape and structure of pressure-sensitive unit, weight semi-girder.In addition, described semi-girder 3 also can linearly extend, and self does not have curved structure, but need with hollow out edge at an angle, as shown in Figure 4, can reach the effect extending semi-girder 3 length equally, the moulding process of this semi-girder is the easiest.
The utility model does not limit the quantity of semi-girder, but preferably, as Figure 1-4, pressure sensor chip can comprise four semi-girders.Four semi-girders can provide support for pressure-sensitive unit better, and better can play the effect absorbing stress, buffering distortion.
In addition, as shown in Figure 5,6, described pressure-sensitive unit 2 can comprise element body 20, sense film 22 and pressure-active element 21.Described element body 20 is as the substrate of sense film 22 and pressure-active element 21, and described semi-girder 3 is connected with described element body 20.Described sense film 22 is arranged on described element body 20, as shown in Figure 6, closed inner chamber is formed between described sense film 22 and described element body 20, when ambient pressure changes, because the air pressure in inner chamber can produce pressure reduction with the external world, thus sense film 22 is deformed, realize sensing.Described pressure-active element 21 is arranged in described sense film 22, and when sense film 22 deforms, pressure-active element 21 can produce corresponding change.
Preferably, as shown in Figure 1, described lead assemblies can comprise four metal lead wires 41, and pressure-active element 21 can be four voltage dependent resistor (VDR)s.Four voltage dependent resistor (VDR)s form Wheatstone bridge, and four metal lead wires 41 are connected with four voltage dependent resistor (VDR)s respectively.When sense film 22 produces distortion, the Wheatstone bridge be made up of voltage dependent resistor (VDR) also can produce response, and the response of electric bridge can be derived by the lead assemblies be made up of four metal lead wires 41.The utility model does not limit the quantity of the type of described pressure-active element, the response mechanism of pressure-sensitive device and metal lead wire, those skilled in the art can according to actual conditions, adopt the devices such as pressure-sensitive capacitance as pressure-active element, and adopt other response circuits.
Preferably, as shown in Figure 1, described metal lead wire 41 can distribute along described semi-girder 3.When described pressure sensor chip comprises four semi-girders 3 and four metal lead wires 41, four metal lead wires 41 respectively can take a semi-girder 3.When described pressure sensor chip comprises the semi-girder of other quantity, described metal lead wire can share a semi-girder or be distributed on different semi-girders.The utility model does not specifically limit the circuit arrangement of described lead assemblies, and those skilled in the art can select other circuit layout's mode according to actual conditions.
In addition, as shown in Figure 1, described pedestal 1 can be provided with pad 42, described metal lead wire 41 can be connected with described pad 42.External circuit can directly contact with described pad 42, so that electric current imported pressure-sensitive unit or derived by the signal in pressure-sensitive unit.
Although be described in detail specific embodiments more of the present utility model by example, it should be appreciated by those skilled in the art, above example is only to be described, instead of in order to limit scope of the present utility model.It should be appreciated by those skilled in the art, when not departing from scope and spirit of the present utility model, above embodiment can be modified.Scope of the present utility model is limited by claims.
Claims (10)
1. a pressure sensor chip, is characterized in that, comprising:
Pedestal (1), described pedestal (1) has hollow out;
Pressure-sensitive unit (2), described pressure-sensitive unit (2) is arranged on the hollow part of described pedestal (1);
Semi-girder (3), described semi-girder (3) is to favour the form at hollow out edge and/or to extend to hollow part from described pedestal (1) with the form self with curved structure, described semi-girder is connected with described pressure-sensitive unit (2), makes described pressure-sensitive unit (2) be suspended from the hollow part of described pedestal (1);
Lead assemblies, described lead assemblies is connected with described pressure-sensitive unit (2).
2. pressure sensor chip according to claim 1, is characterized in that, described curved structure is L shape structure.
3. pressure sensor chip according to claim 1, is characterized in that, described curved structure is arcuate structure.
4. pressure sensor chip according to claim 1, is characterized in that, described curved structure character form structure for it.
5. pressure sensor chip according to claim 1, is characterized in that, described pressure sensor chip comprises four semi-girders (3).
6. pressure sensor chip according to claim 2, it is characterized in that, described pressure sensor chip comprises four semi-girders (3), four described semi-girders (3) composition “ Swastika " shape structure, described pressure-sensitive unit (2) is positioned at “ Swastika " center of shape structure.
7. pressure sensor chip according to claim 3, it is characterized in that, described pressure sensor chip comprises four semi-girders (3), and four described cantilever composition helical structures, described pressure-sensitive unit (2) is positioned at the center of helical structure.
8. according to one of any described pressure sensor chip of claim 1-7, it is characterized in that, described pressure-sensitive unit (2) comprises element body (20), sense film (22) and pressure-active element (21), described semi-girder (3) is connected with described element body (20), described sense film (22) is arranged on described element body (20), be formed with inner chamber between described sense film (22) and described element body (20), described pressure-active element (21) is arranged on described sense film (22).
9. pressure sensor chip according to claim 8, it is characterized in that, described lead assemblies comprises four metal lead wires (41), described pressure-active element (21) is four voltage dependent resistor (VDR)s, four described voltage dependent resistor (VDR)s form Wheatstone bridge, often prop up described metal lead wire (41) and are connected with a voltage dependent resistor (VDR) respectively.
10. pressure sensor chip according to claim 9, is characterized in that, described metal lead wire (41) distributes along described semi-girder (3).
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| CN201520912994.4U CN205120297U (en) | 2015-11-16 | 2015-11-16 | Pressure sensor chip |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201520912994.4U CN205120297U (en) | 2015-11-16 | 2015-11-16 | Pressure sensor chip |
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| CN205120297U true CN205120297U (en) | 2016-03-30 |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107797706A (en) * | 2017-11-03 | 2018-03-13 | 厦门天马微电子有限公司 | A kind of pressure sensitive sensor, display panel and device |
| CN108593160A (en) * | 2018-05-23 | 2018-09-28 | 太原理工大学 | A kind of manufacturing method of diaphragm type cantilever beam surface stress biosensor |
| CN108981987A (en) * | 2018-08-07 | 2018-12-11 | 东南大学 | A kind of small retinoic acid syndrome spring beam six-dimension force sensor |
| CN109580077A (en) * | 2018-12-06 | 2019-04-05 | 中国科学院苏州纳米技术与纳米仿生研究所南昌研究院 | Pressure sensor structure and preparation method thereof |
| CN110383027A (en) * | 2017-03-02 | 2019-10-25 | 罗伯特·博世有限公司 | Micro mechanical pressure sensor |
| CN112461413A (en) * | 2020-11-15 | 2021-03-09 | 沈阳工业大学 | Integrated micro-cantilever detection chip and preparation method thereof |
| CN114061796A (en) * | 2021-11-10 | 2022-02-18 | 中国电子科技集团公司第四十九研究所 | Silicon piezoresistive pressure sensor core and preparation method thereof |
-
2015
- 2015-11-16 CN CN201520912994.4U patent/CN205120297U/en active Active
Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11060937B2 (en) * | 2017-03-02 | 2021-07-13 | Robert Bosch Gmbh | Micromechanical pressure sensor |
| CN110383027A (en) * | 2017-03-02 | 2019-10-25 | 罗伯特·博世有限公司 | Micro mechanical pressure sensor |
| CN110383027B (en) * | 2017-03-02 | 2021-12-21 | 罗伯特·博世有限公司 | Micromechanical pressure sensor |
| CN107797706A (en) * | 2017-11-03 | 2018-03-13 | 厦门天马微电子有限公司 | A kind of pressure sensitive sensor, display panel and device |
| CN108593160A (en) * | 2018-05-23 | 2018-09-28 | 太原理工大学 | A kind of manufacturing method of diaphragm type cantilever beam surface stress biosensor |
| CN108593160B (en) * | 2018-05-23 | 2020-07-17 | 太原理工大学 | Method for manufacturing film type cantilever beam surface stress biosensor |
| CN108981987A (en) * | 2018-08-07 | 2018-12-11 | 东南大学 | A kind of small retinoic acid syndrome spring beam six-dimension force sensor |
| CN108981987B (en) * | 2018-08-07 | 2020-08-11 | 东南大学 | Small-dimension space coupling elastic beam six-dimension force sensor |
| CN109580077A (en) * | 2018-12-06 | 2019-04-05 | 中国科学院苏州纳米技术与纳米仿生研究所南昌研究院 | Pressure sensor structure and preparation method thereof |
| CN109580077B (en) * | 2018-12-06 | 2020-07-28 | 中国科学院苏州纳米技术与纳米仿生研究所南昌研究院 | Pressure sensor structure and manufacturing method thereof |
| CN112461413A (en) * | 2020-11-15 | 2021-03-09 | 沈阳工业大学 | Integrated micro-cantilever detection chip and preparation method thereof |
| CN112461413B (en) * | 2020-11-15 | 2022-03-08 | 沈阳工业大学 | Integrated micro-cantilever detection chip and preparation method thereof |
| CN114061796A (en) * | 2021-11-10 | 2022-02-18 | 中国电子科技集团公司第四十九研究所 | Silicon piezoresistive pressure sensor core and preparation method thereof |
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Address after: 261031 Dongfang Road, Weifang high tech Development Zone, Shandong, China, No. 268 Patentee after: Goertek Inc. Address before: 261031 Dongfang Road, Weifang high tech Development Zone, Shandong, China, No. 268 Patentee before: Goertek Inc. |
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Effective date of registration: 20200608 Address after: 266104 room 103, 396 Songling Road, Laoshan District, Qingdao, Shandong Province Patentee after: Goer Microelectronics Co.,Ltd. Address before: 261031 Dongfang Road, Weifang high tech Development Zone, Shandong, China, No. 268 Patentee before: GOERTEK Inc. |
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