CN205115586U - Meltallizing hides worn -out stopper - Google Patents

Abstract

The utility model provides a meltallizing hides worn -out stopper. Meltallizing hides worn -out stopper includes the stopper body for in filling in the surperficial pothole of semiconductor device's part, wherein work as the meltallizing is carried out when handling in the surface of semiconductor device's part, the stopper body is filled in it is in the surperficial pothole of semiconductor device's part, worn -out in order to hide the surperficial pothole structure that the meltallizing is handled influences the part is avoided to the surface pothole.

Description

Meltallizing hides worn-out stopper

[technical field]

The utility model relates to a kind of meltallizing and hides worn-out stopper, particularly relates to a kind of meltallizing that can be used for meltallizing process that relates to and hides worn-out stopper.

[background technology]

In manufacture of semiconductor, must regularly or aperiodically to the part of semi-conductor processing equipment clean and regenerate, to maintain the usefulness of semi-conductor processing equipment, and can work-ing life of extension device.

For physical vapor deposition processing procedure, physical vapor deposition processing procedure mainly deposits a film on a substrate.First utilize a direct supply to be electrically coupled to a backboard and respectively and cover plate, cover plate by this backboard and this and in this reactor chamber, form electric field ion gun bundle is hit to metal targets.After ion gun bundle clashes into target, the metal sputtering on this target can be formed this film on the substrate.

Usually, the reactor chamber of physical vapor deposition in use for some time, this the surface formation metal coating of plate and mother metal can be covered in reactor chamber, therefore must carry out cleaning and regenerate to reactor chamber, prevent metal coating from breaking or peel off the micro dust particle that produces be disseminated to this substrate and affect yield.So-called cleaning means that this covers the suitable method of the material selection of the metal coating of plate and this mother metal and material is removed in reactor chamber, such as soak reactor chamber with acid or alkaline chemical solution, the metal coating separated and dissolved covering plate and mother metal surface will be formed at.So-called regeneration recovers this in the mode such as sandblasting and shaping again after referring to and cleaning and covers plate and the original profile of mother metal and surface property.But above-mentioned clean and regeneration all can corrode with loss reactor chamber in cover the body thickness of plate and mother metal, cause shorten work-ing life.

In addition, for the screw hole in reaction chamber, such as be locked in the screw hole between this mother metal, above-mentionedly soak reactor chamber with chemical solution, this covered to plate and this step such as mother metal sandblasting and shaping can make screw hole produce reaming phenomenon, therefore after repeatedly carrying out cleaning and regenerate, screw hole size and original size difference to some extent can be caused, cause screw hole and screw to combine time error excessive and make not good even cannot the continuation of locking function use.

Further, owing to clean etc. in process aforementioned, a large amount of acidity or the chemical solution of alkalescence must be used, soak and cover plate and mother metal, with dissolution of metals plated film, make it and cover plate and mother metal is separated.Due to a large amount of acidity or the chemical solution of alkalescence inevitably must be used, thus in the process cleaned, a large amount of clear water must be used to rinse the part of manufacture of semiconductor.

[utility model content]

Main purpose of the present utility model is to provide a kind of meltallizing to hide worn-out stopper, and described meltallizing hides worn-out stopper and comprises:

Plug body, in order to fill in the surperficial pothole of the part of semiconductor devices, wherein when meltallizing process is carried out on the surface of the part of described semiconductor devices, described plug body is in the surperficial pothole of the part filling in described semiconductor devices, to hide worn-out described surperficial pothole.

In one embodiment, when meltallizing process is carried out on the surface of the part of described semiconductor devices, described plug body hides worn-out residence completely to state surperficial pothole.

Compared to the problem of existing meltallizing equipment, when carrying out meltallizing process, the meltallizing equipment of the present embodiment can be utilized to carry out meltallizing process, and the outside that can be positioned at airtight compartment due to operator operates, and operator thus can be avoided to be subject to the injury of meltallizing process.Moreover the meltallizing of the present embodiment hides worn-out stopper and can be used for filling in the surperficial pothole of the part of semiconductor devices, meltallizing process is avoided to affect the surperficial pothole structure of part.

For foregoing of the present utility model can be become apparent, preferred embodiment cited below particularly, and coordinate institute's accompanying drawings, be described in detail below:

[accompanying drawing explanation]

Fig. 1 and 2 is schematic diagram that meltallizing of the present utility model hides an embodiment of worn-out stopper; And

Fig. 3 is the schematic diagram of an embodiment of meltallizing equipment of the present utility model.

[embodiment]

The explanation of following embodiment is graphic with reference to what add, can in order to the specific embodiment implemented in order to illustrate the utility model.The direction term that the utility model is mentioned, such as " on ", D score, "front", "rear", "left", "right", " interior ", " outward ", " side " etc., be only the direction with reference to annexed drawings.Therefore, the direction term of use is in order to illustrate and to understand the utility model, and is not used to limit the utility model.

Accompanying drawing and explanation are considered to illustrating property in itself, instead of restrictive.In the drawings, the unit of structural similitude represents with identical label.In addition, in order to understand and be convenient to describe, size and the thickness of each assembly shown in accompanying drawing illustrate arbitrarily, but the utility model is not limited thereto.

In the accompanying drawings, for clarity, the thickness in layer, film, panel, region etc. is exaggerated.In the accompanying drawings, in order to understand and be convenient to describe, the thickness in some layers and region is exaggerated.The assembly that will be appreciated that when such as layer, film, region or substrate is referred to as " " another assembly " on " time, directly on another assembly described, or also can there is intermediate module in described assembly.

In addition, in the description, unless explicitly described as contrary, otherwise word " comprises " being understood to imply and comprises described assembly, but do not get rid of other assembly any.In addition, in the description, " ... on " mean to be positioned at above target element or below, and do not mean must be positioned on the top based on gravity direction.

Please refer to Fig. 1 and 2, Fig. 1 and 2 is schematic diagram that meltallizing hides worn-out stopper.The meltallizing of the present embodiment hides worn-out stopper and can be used for filling in the surperficial pothole of the part of semiconductor devices, avoids meltallizing process to affect the surperficial pothole structure of part.Meltallizing hides worn-out stopper and comprises plug body 121, in order to fill in the surperficial pothole of the part of semiconductor devices, wherein when meltallizing process is carried out on the surface of the part of semiconductor devices, plug body 121 can just be filled in the surperficial pothole of the part a of semiconductor devices, to hide worn-out described surperficial pothole completely.

Then, be described for the spare part cleaning process in the reaction cavity of semiconductor devices, it is main after aluminium alloy spare part mechanical workout completes and applies relevant surface treatment (as anodizing, meltallizing process, sandblasting etc.), or machine is descended after semi-conductor dry etcher uses, follow-up this cleaning way that all can use carries out ultra-clean cleaning, to meet the ultra-high purity requirement in harsh conductor etching unit room, for the purpose of effect of improving production efficiency and product yield.

When carrying out meltallizing process, the meltallizing equipment of the present embodiment can be utilized to carry out meltallizing process, and the outside that can be positioned at airtight compartment 118 due to operator operates, and operator thus can be avoided to be subject to the injury of meltallizing process.

Please refer to Fig. 3, Fig. 3 is the schematic diagram of meltallizing equipment.The meltallizing equipment of the present embodiment can be used for carrying out meltallizing process at least part of surface of the part of semiconductor devices.Meltallizing equipment comprises airtight compartment 118, mechanical arm 119 and meltallizing device 120.Mechanical arm 119 is arranged in airtight compartment 118, and meltallizing device 120 is arranged on mechanical arm 119, for the surperficial meltallizing process to semiconductor devices spare part.When carrying out meltallizing process, the outside that operator can be positioned at airtight compartment 118 controls mechanical arm 119 by control device and moves meltallizing device 120, start meltallizing device 120, so that the surperficial meltallizing process utilizing meltallizing device 120 to come semiconductor devices spare part simultaneously.When operating, operator learn the situation of meltallizing process by the transparent window 118a of airtight compartment 118.

Such as be applicable to the spare part that aluminum substrates applies anodizing, before cleaning must according to the state of spare part, and make difference and prepare in advance.When spare part is new product part, first uses liquid of soaping to carry out degreasing processing procedure, carry out new anonite membrane process more afterwards, after completing, enter cleaning process.When spare part is anode regeneration part, old anonite membrane need be carried out strip and new anonite membrane regeneration processing procedure and new meltallizing film and regenerate processing procedure, after completing, enter cleaning process.When spare part is upper machine cleaning part, get corresponding liquid according to differential responses cavity processing procedure and carry out membrane removal processing procedure, complete and enter cleaning process.

After being ready to complete before cleaning, can carry out cleaning process, its step is such as sequentially as follows: an IPA wiping, uses non-dust cloth to pick IPA (Virahol) evenly wiping spare part surface; Pure water rinsing, continues and uses the complete hydro-peening spare part surface of pure water; Degreasing, then spare part is soaked in configuration temperature 40 ~ 50 DEG C, sanitising agent (ALCONOXLuminox) liquid, to remove spare part surface grease; Second pure water rinses, and re-uses the complete hydro-peening spare part surface of pure water; Secondary IPA wiping, enters dust free chamber by spare part transposition, spare part is placed in platform, uses non-dust cloth to be stained with a little IPA (Virahol) evenly wiping spare part surface; Ultrapure water: on the complete hydro-peening spare part surface of dust free chamber, 2 ~ 5 minutes time; Hot ultrapure water soaks, and at dust free chamber, is soaked in by spare part in the ultrapure water temperature 40 ~ 50 DEG C of overflow, soak time 5 ~ 15 minutes; Secondary ultrapure water, uses the complete hydro-peening spare part surface of ultrapure water in dust free chamber; Ultrasonic washer, is soaked in the ultrapure water room temperature of overflow in dust free chamber by spare part, collocation ultrasound frequency 40kHz, carries out ultrasonic washer; Ultrapure water again: at dust free chamber, uses the complete hydro-peening spare part surface of ultrapure water; Dry up, at dust free chamber, use uncontaminated air or nitrogen to dry up spare part surface; Dry: enter in dust free chamber, be placed in by spare part in the Non-dust furnace of 90 ~ 120 DEG C, baking time is greater than 60 minutes, treats that the temperature on spare part surface is lower than 50 DEG C after baking; Nitrogen blowing, at dust free chamber, takes out the spare part after drying, and uses nitrogen to blow spare part surface; Once pack, at dust free chamber, spare part is placed in nylon (Nylon) bag being full of nitrogen, utilizes sealing machine and extraction equipment to carry out vacuum packaging; Again pack, at dust free chamber, the packaged spare part of nylon (Nylon) bag is placed in PE bag, utilizes sealing machine and extraction equipment to carry out vacuum packaging; Vanning is transported, and spare part takes out dust free chamber, is placed in special logical case, completes cleaning process, can shipment use to client terminal.

Therefore, when carrying out meltallizing process, the meltallizing equipment of the present embodiment can be utilized to carry out meltallizing process, and the outside that can be positioned at airtight compartment due to operator operates, and operator thus can be avoided to be subject to the injury of meltallizing process.Moreover the meltallizing of the present embodiment hides worn-out stopper and can be used for filling in the surperficial pothole of the part of semiconductor devices, meltallizing process is avoided to affect the surperficial pothole structure of part.

" in certain embodiments " and the term such as " in various embodiments " be used repeatedly.This term does not refer to identical embodiment usually; But it can also refer to identical embodiment." comprise ", the word such as " having " and " comprising " is synonym, unless its context meaning demonstrates other meaning.

Although the example of various method, equipment and system has been described in herein, the scope that this disclosure contains has been not limited thereto.On the contrary, this disclosure contains the thing of all methods reasonably dropped in scope that claim defines, equipment, system and manufacture, and the scope of claim should be understood according to the claim interpretation principle be established.Such as, although the example of the system disclosed above also comprise outside other component the software that can perform on hardware or or firmware, it is to be understood that these systems are exemplary example, and should to be read as be restrictive example.In detail, any or all revealed hardware, software and/or firmware component can by some combinations being ad hoc embodied as hardware, be ad hoc embodied as software, be ad hoc embodied as firmware or hardware, software and/or firmware.

In sum; although the utility model discloses as above with preferred embodiment; but above preferred embodiment is also not used to limit the utility model; those of ordinary skill in the art; not departing from spirit and scope of the present utility model; all can do various change and retouching, the scope that therefore protection domain of the present utility model defines with claim is as the criterion.

Claims (2)

1. meltallizing hides a worn-out stopper, it is characterized in that: described meltallizing hides worn-out stopper and comprises:

Plug body, in order to fill in the surperficial pothole of the part of semiconductor devices, wherein when meltallizing process is carried out on the surface of the part of described semiconductor devices, described plug body is in the surperficial pothole of the part filling in described semiconductor devices, to hide worn-out described surperficial pothole.

2. meltallizing according to claim 1 hides worn-out stopper, it is characterized in that: when meltallizing process is carried out on the surface of the part of described semiconductor devices, and described plug body hides worn-out residence completely to state surperficial pothole.