CN205092239U - 一种红外线接收头封装结构 - Google Patents

一种红外线接收头封装结构 Download PDF

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CN205092239U
CN205092239U CN201520921943.8U CN201520921943U CN205092239U CN 205092239 U CN205092239 U CN 205092239U CN 201520921943 U CN201520921943 U CN 201520921943U CN 205092239 U CN205092239 U CN 205092239U
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chip
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胡自立
何细雄
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Shenzhen Cgx Optoelectronic Technology Inc
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors

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Abstract

本实用新型属于半导体封装技术领域，提供了一种红外线接收头封装结构。它包括接收芯片、解码芯片、胶体、屏蔽支架、第一引脚、第二引脚和第三引脚，屏蔽支架电性连接在第二引脚上，屏蔽支架包括固定部和折弯部，折弯部上开设有信号接收窗口，接收芯片和解码芯片通过导线连接，并电性连接在固定部上，接收芯片与信号接收窗口相对，解码芯片分别电性连接第一引脚和第三引脚；信号接收窗口上设置有一个屏蔽天线，屏蔽天线将信号接收窗口分为两部分，并且其方向与导线的方向大体一致，折弯部上设置有屏蔽挡块，屏蔽挡块位于接收芯片的左右两侧。本实用新型通过设置的屏蔽天线和屏蔽挡块实现抗干扰功能，其具有结构简单、成本低和生产效率高的优点。

Description

一种红外线接收头封装结构
技术领域
本实用新型属于半导体封装技术领域，尤其涉及一种红外线接收头封装结构。
背景技术
近年来，各种红外线遥控器已经应用在家电、医学、军事等各种场合。在不同的场合下，电磁干扰和光干扰困扰着红外线遥控器的有效遥控，而如何提高红外接收头封装结构的抗干扰性已经成为各行各业共同关注的话题。介于常规红外接收头封装结构抗干扰性有限，各元器件供应商逐步开发出各种各样的红外接收头的封装结构。
如图1及图2所示，是现有的一种红外接收头封装结构，其将接收芯片1、解码芯片2、屏蔽支架3、相互间彼此绝缘的第一引脚5、第二引脚6和第三引脚7封装为一体。屏蔽支架3包括固定部32和由固定部32弯折而成的折弯部31，接收芯片1与解码芯片2通过导线11相连，并电性连接在固定部32上，折弯部31上开设有与接收芯片1相对的信号接收窗口8。为了屏蔽电磁干扰和光干扰，在该红外接收头封装结构的基础上手工在其外部加套铁壳，并需将铁壳焊接在接地脚上来实现外屏蔽干扰效果，这种结构存在结构复杂、人工成本高和生产效率低的缺点。
实用新型内容
本实用新型所要解决的技术问题在于提供一种结构简单、成本低和生产效率高的红外线接收头封装结构。
本实用新型是这样实现的，一种红外线接收头封装结构，包括封装成一体的接收芯片、解码芯片、胶体、屏蔽支架、相互间彼此绝缘的第一引脚、第二引脚和第三引脚，所述屏蔽支架电性连接固定在所述第二引脚上，所述屏蔽支架包括对向设置的固定部和折弯部，所述折弯部上开设有信号接收窗口，所述接收芯片和解码芯片通过导线相互连接，并电性连接固定在所述固定部上，所述接收芯片与信号接收窗口相对，所述解码芯片分别电性连接所述第一引脚和第三引脚；所述信号接收窗口上设置有一个屏蔽天线，所述屏蔽天线将所述信号接收窗口分为两部分，并且其方向与导线的方向大体一致，所述折弯部上设置有屏蔽挡块，所述屏蔽挡块位于所述接收芯片的左右两侧。
进一步地，所述屏蔽天线位于所述信号接收窗口的中间。
进一步地，所述屏蔽天线竖向设置。
进一步地，所述屏蔽挡块由所述折弯部的相对两侧弯折延伸而出。
进一步地，所述固定部、折弯部、屏蔽天线及屏蔽挡块一体成型。
本实用新型与现有技术相比，有益效果在于：本实用新型通过在信号接收窗口上设置屏蔽天线、在接收芯片的左右两侧设置屏蔽挡块，来实现抗电磁干扰和抗光干扰的功能，从而可节省利用手工在传统的红外接收头外部加套铁壳与焊接铁壳的生产制作流程，其结构简单，能大大减少人工成本，提高生产效率。
附图说明
图1是现有技术提供的红外线接收头的屏蔽支架折弯前的结构示意图；
图2是图1中屏蔽支架折弯后的结构示意图；
图3是本实用新型实施例提供的红外线接收头封装成型后的结构示意图；
图4是本实用新型实施例红外线接收头的屏蔽支架折弯前的结构示意图；
图5是图4所示实施例的屏蔽支架折弯后的结构示意图。
具体实施方式
为了使本实用新型的目的、技术方案及优点更加清楚明白，以下结合附图及实施例，对本实用新型进行进一步详细说明。应当理解，此处所描述的具体实施例仅仅用以解释本实用新型，并不用于限定本实用新型。
如图3、图4和图5所示，本实用新型实施例的一种红外线接收头封装结构，它包括封装成一体的接收芯片1、解码芯片2、屏蔽支架3、胶体4、相互间彼此绝缘的第一引脚5、第二引脚6和第三引脚7，其中第一引脚5为供电脚，第二引脚6为接地脚，第三引脚7为信号输出脚。屏蔽支架3电性连接固定在第二引脚6上，屏蔽支架3包括对向设置的固定部32和折弯部31，折弯部31上开设有信号接收窗口8，接收芯片1和解码芯片2通过导线11相互连接，并电性连接固定在固定部32上。接收芯片1与信号接收窗口8相对，使接收芯片1接收红外发射信号，解码芯片2分别通过电线12电性连接第一引脚5和第三引脚7。信号接收窗口8上设置有一个屏蔽天线9，屏蔽天线9将信号接收窗口8分为两部分，并且其方向与导线11的方向大体一致，用于避免应用电路中的电磁干扰。屏蔽支架3上设置有屏蔽挡块10，屏蔽挡块10位于接收芯片1的左右两侧，其由折弯部31的相对两侧弯折延伸而出，用于对接收芯片1左右两侧射入的侧面光进行遮挡抗干扰。
具体地，接收芯片1在接收红外发射信号的过程中，由于在折弯部31上的信号接收窗口8在电磁场环境中形成感应电，而设置在信号接收窗口8上的屏蔽天线9把信号接收窗口8一分为二，分为两个信号接收窗口8，从而可以形成感应抵消。另外，用于连接接收芯片1和解码芯片2的导线11是悬空的,也容易产生感应电，而在导线11中通过的是很弱的电流,弱电信号很容易受到干扰的影响，将导线11的方向和屏蔽天线9的方向设置成大体一致，屏蔽天线9也正好可以起到感应抵消的作用，从而避免了应用电路中的电磁干扰。本实施例中的导线11采用阻抗小、韧性好的金丝来进行焊线，以保证良好的导通性能。
上述实施例中，屏蔽天线9位于信号接收窗口8的中间，并竖向设置在信号屏蔽窗口8上，能够达到更佳的抗电磁干扰效果。
上述实施例中，固定部32、折弯部31、屏蔽天线9和屏蔽挡块10是一体冲压成型的，折弯部31经过折弯之后与固定部32相对(如图5所示)，再通过胶体4将接收芯片1、解码芯片2、折弯部31、固定部32、第一引脚5、第二引脚6和第三引脚7封装成一个整体(如图3所示)。
本实用新型实施例通过设置的屏蔽天线9和屏蔽挡块10来实现抗电磁干扰和光干扰的功能，使其能够具备抗干扰性能的情况下能够将结构简单化。节省了利用手工在传统红外接收头封装结构的外部加套铁壳,并将铁壳焊接在接地脚上来实现抗干扰功能的复杂生产制作流程，从而降低大量人工成本，提高生产效率。
另外，该红外线接收头封装结构还能够避免铁壳存在虚焊的情况导致抗干扰功能失效的问题，提高抗干扰的稳定性。
以上所述仅为本实用新型的较佳实施例而已，并不用以限制本实用新型，凡在本实用新型的精神和原则之内所作的任何修改、等同替换和改进等，均应包含在本实用新型的保护范围之内。

Claims (5)

1.一种红外线接收头封装结构，包括封装成一体的接收芯片、解码芯片、胶体、屏蔽支架、相互间彼此绝缘的第一引脚、第二引脚和第三引脚，所述屏蔽支架电性连接固定在所述第二引脚上，所述屏蔽支架包括对向设置的固定部和折弯部，所述折弯部上开设有信号接收窗口，所述接收芯片和解码芯片通过导线相互连接，并电性连接固定在所述固定部上，所述接收芯片与信号接收窗口相对，所述解码芯片分别电性连接所述第一引脚和第三引脚；其特征在于：所述信号接收窗口上设置有一个屏蔽天线，所述屏蔽天线将所述信号接收窗口分为两部分，并且其方向与导线的方向大体一致，所述折弯部上设置有屏蔽挡块，所述屏蔽挡块位于所述接收芯片的左右两侧。
2.如权利要求1所述的红外线接收头封装结构，其特征在于：所述屏蔽天线位于所述信号接收窗口的中间。
3.如权利要求1或2所述的红外线接收头封装结构，其特征在于：所述屏蔽天线竖向设置。
4.如权利要求1所述的红外线接收头封装结构，其特征在于：所述屏蔽挡块由所述折弯部的相对两侧弯折延伸而出。
5.如权利要求1、2或4所述的红外线接收头封装结构，其特征在于：所述固定部、折弯部、屏蔽天线及屏蔽挡块一体成型。
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112185947A (zh) * 2020-10-21 2021-01-05 深圳市锦创宏光电科技有限公司 一种红外接收装置及方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112185947A (zh) * 2020-10-21 2021-01-05 深圳市锦创宏光电科技有限公司 一种红外接收装置及方法

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