CN204967619U - Full -bridge shift circuit of soft switch of gamut - Google Patents

Full -bridge shift circuit of soft switch of gamut Download PDF

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Publication number
CN204967619U
CN204967619U CN201520590053.3U CN201520590053U CN204967619U CN 204967619 U CN204967619 U CN 204967619U CN 201520590053 U CN201520590053 U CN 201520590053U CN 204967619 U CN204967619 U CN 204967619U
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semiconductor
oxide
metal
drain electrode
inductance
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CN201520590053.3U
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姚晓武
张昌运
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Zhejiang Yaneng Energy Technology Co Ltd
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Zhejiang Yaneng Energy Technology Co Ltd
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    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02BCLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
    • Y02B70/00Technologies for an efficient end-user side electric power management and consumption
    • Y02B70/10Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes

Abstract

(B, ) the utility model relates to a power electronics field, specifically be a full -bridge shift circuit of soft switch of gamut, including the input power, be connected with concatenate each other first between the input both ends of the power supply, second (b) (b) MOS (b) (b) pipe, the drain electrode of first (b) (b) MOS (b) (b) pipe links to each other with the anodal of input power, the source electrode of first (b) (b) MOS (b) (b) pipe and the drain electrode of second (b) (b) MOS (b) (b) pipe link to each other and are connected with first electric capacity and the first inductance that concatenates in proper order in the junction, the source electrode of second (b) (b) MOS (b) (b) pipe links to each other and ground connection with the negative pole of input power, the drain electrode of first (b) (b) MOS (b) (b) pipe still is connected to the drain electrode of a third (b) (b) MOS (b) (b) pipe, the drain electrode of the source electrode of third (b) (b) MOS (b) (b) pipe and fourth (b) (b) MOS (b) (b) the pipe of a source electrode ground connection links to each other and is connected with second electric capacity and the second inductance that concatenates in proper order in the junction, be connected to the primary side winding and the ground connection of a transformer behind first inductance and the second inductance short circuit, the vice limit winding of transformer is connected with output circuit, the operation safety and stability, low cost, simple structure and loss are few, the duty cycle is lost for a short time. (B, )

Description

A kind of full-bridge phase shifting circuit of gamut Sofe Switch
Technical field
the utility model relates to electric and electronic technical field, is specially a kind of full-bridge phase shifting circuit of gamut Sofe Switch.
Background technology
the full-bridge phase shifting flexible circuit of Sofe Switch realizes Sofe Switch due to the leakage inductance of the parasitic parameter and transformer that can utilize MOS itself, be widely applied in various large power, electrically source apparatus, but all there are some significant problems, one is that circulation loss is large, two is the loss increasing duty ratio, and in order to duty-cycle loss being controlled the circuits improvement in a rational scope, lagging leg can be result in again and gamut cannot realize Sofe Switch, prior art has the circuit of improvement equally to it, but this circuit needs the device adding auxiliary circuit more, for reduced volume, increase power density and have certain obstruction, and add a lot of circuit cost.
Utility model content
an object of the present utility model is to provide that a kind of security of operation is stablized, cost is low, structure is simple and loss is few, duty-cycle loss is little gamut can realize the full-bridge phase shifting circuit of the gamut Sofe Switch of Sofe Switch.
above-mentioned technical purpose of the present utility model is achieved by the following technical programs: a kind of full-bridge phase shifting circuit of gamut Sofe Switch, comprise input power, the first metal-oxide-semiconductor and second metal-oxide-semiconductor of serial connection is mutually connected with between described input power two ends, the described drain electrode of the first metal-oxide-semiconductor is connected with the positive pole of input power, the source electrode of the first metal-oxide-semiconductor is connected with the drain electrode of the second metal-oxide-semiconductor and is connected with the first electric capacity and the first inductance that are connected in series successively in junction, the source electrode of the second metal-oxide-semiconductor is connected with the negative pole of input power and ground connection, the drain electrode of described first metal-oxide-semiconductor is also connected to the drain electrode of one the 3rd metal-oxide-semiconductor, the source electrode of described 3rd metal-oxide-semiconductor is connected with the drain electrode of the 4th metal-oxide-semiconductor of one source pole ground connection and is connected with the second electric capacity and the second inductance that are connected in series successively in junction, the former limit winding of a transformer is connected to and ground connection after described first inductance and the second inductance short circuit, the vice-side winding of described transformer is connected with output circuit.
in technique scheme, this circuit structure is more stable, reliable, be applicable to powerful Switching Power Supply, cost is low, structure is simple and can reduce the circulation loss of full-bridge phase-shift soft switch power supply, compared with traditional circuit, it can reduce the circulation energy loss of the metal-oxide-semiconductor as switching tube of 1/2, and can realize lagging leg zero voltage switch and minimum duty-cycle loss in wider loading range, other physical properties such as heat radiation are all highly improved, and gamut can realize Sofe Switch.
as to preferably of the present utility model, output circuit comprises vice-side winding two ends and is connected to conducting direction and is the first diode away from vice-side winding direction and the second diode, be connected in series an outputting inductance after the negative pole end short circuit of the first diode and the second diode and using the other end of outputting inductance as voltage output end and and intermediate ends between vice-side winding two ends form output voltage.
as to preferably of the present utility model, between the intermediate ends between voltage output end and vice-side winding two ends, be connected with the output capacitance be arranged in parallel and output resistance.
as to preferably of the present utility model, be all connected with a booster diode between the source electrode of the first metal-oxide-semiconductor, the second metal-oxide-semiconductor, the 3rd metal-oxide-semiconductor and the 4th metal-oxide-semiconductor and drain electrode and conducting direction is that the source electrode of each metal-oxide-semiconductor is to drain directions.
as to preferably of the present utility model, between the source electrode of the first metal-oxide-semiconductor, the second metal-oxide-semiconductor, the 3rd metal-oxide-semiconductor and the 4th metal-oxide-semiconductor and drain electrode, be all connected with an auxiliary capacitor.
as to preferably of the present utility model, the first metal-oxide-semiconductor, the second metal-oxide-semiconductor, the 3rd metal-oxide-semiconductor and the 4th metal-oxide-semiconductor are NPN type pipe.
the beneficial effects of the utility model: this circuit structure is more stable, reliable, be applicable to powerful Switching Power Supply, cost is low, structure is simple, be beneficial to reduced volume and increase power density, and the circulation loss of full-bridge phase-shift soft switch power supply can be reduced, compared with traditional circuit, it can reduce the circulation energy loss of the metal-oxide-semiconductor as switching tube of 1/2, and lagging leg zero voltage switch and minimum duty-cycle loss can be realized in wider loading range, other physical properties such as heat radiation are all highly improved, and gamut can realize Sofe Switch.
Accompanying drawing explanation
fig. 1 is the structural representation of the utility model embodiment.
in figure: 1, input power, the 11, first metal-oxide-semiconductor, the 12, second metal-oxide-semiconductor, 13, the 3rd metal-oxide-semiconductor, the 14, the 4th metal-oxide-semiconductor, the 21, first electric capacity, 31, the first inductance, the 22, second electric capacity, the 32, second inductance, 2, transformer, the 41, first diode, the 42, second diode, 5, outputting inductance, 6, output capacitance, 7, output resistance, 81, booster diode, 82, auxiliary capacitor.
Embodiment
following specific embodiment is only to explanation of the present utility model; it is not to restriction of the present utility model; those skilled in the art can make to the present embodiment the amendment not having creative contribution as required after reading this specification, as long as but be all subject to the protection of Patent Law in right of the present utility model.
embodiment, as shown in Figure 1, a kind of full-bridge phase shifting circuit of gamut Sofe Switch, comprise input power 1, the first metal-oxide-semiconductor 11 and the second metal-oxide-semiconductor 12 of serial connection is mutually connected with between described input power 1 two ends, the drain electrode of described first metal-oxide-semiconductor 11 is connected with the positive pole of input power 1, the source electrode of the first metal-oxide-semiconductor 11 is connected with the drain electrode of the second metal-oxide-semiconductor 12 and is connected with the first electric capacity 21 and the first inductance 31 be connected in series successively in junction, the source electrode of the second metal-oxide-semiconductor 12 is connected with the negative pole of input power 1 and ground connection, the drain electrode of described first metal-oxide-semiconductor 11 is also connected to the drain electrode of one the 3rd metal-oxide-semiconductor 13, the source electrode of described 3rd metal-oxide-semiconductor 13 is connected with the drain electrode of the 4th metal-oxide-semiconductor 14 of one source pole ground connection and is connected with the second electric capacity 22 and the second inductance 32 be connected in series successively in junction, the former limit winding of a transformer 2 is connected to and ground connection after described first inductance 31 and the second inductance 32 short circuit, the vice-side winding of described transformer 2 is connected with output circuit.
output circuit comprise vice-side winding two ends be connected to conducting direction be away from be connected in series an outputting inductance 5 after first diode 41 in vice-side winding direction and the negative pole end short circuit of the second diode 42, first diode 41 and the second diode 42 and using the other end of outputting inductance 5 as voltage output end and and intermediate ends between vice-side winding two ends form output voltage.The output capacitance 6 and output resistance 7 that are arranged in parallel is connected with between intermediate ends between voltage output end and vice-side winding two ends.A booster diode 81 is all connected with and conducting direction is that the source electrode of each metal-oxide-semiconductor is to drain directions between the source electrode of the first metal-oxide-semiconductor 11, second metal-oxide-semiconductor 12, the 3rd metal-oxide-semiconductor 13 and the 4th metal-oxide-semiconductor 14 and drain electrode.An auxiliary capacitor 82 is all connected with between the source electrode of the first metal-oxide-semiconductor 11, second metal-oxide-semiconductor 12, the 3rd metal-oxide-semiconductor 13 and the 4th metal-oxide-semiconductor 14 and drain electrode.First metal-oxide-semiconductor 11, second metal-oxide-semiconductor 12, the 3rd metal-oxide-semiconductor 13 and the 4th metal-oxide-semiconductor 14 are NPN type pipe.

Claims (6)

1. the full-bridge phase shifting circuit of a gamut Sofe Switch, it is characterized in that: comprise input power (1), the first metal-oxide-semiconductor (11) and second metal-oxide-semiconductor (12) of serial connection is mutually connected with between described input power (1) two ends, the drain electrode of described first metal-oxide-semiconductor (11) is connected with the positive pole of input power (1), the source electrode of the first metal-oxide-semiconductor (11) is connected with the drain electrode of the second metal-oxide-semiconductor (12) and is connected with the first electric capacity (21) and the first inductance (31) that are connected in series successively in junction, the source electrode of the second metal-oxide-semiconductor (12) is connected with the negative pole of input power (1) and ground connection, the drain electrode of described first metal-oxide-semiconductor (11) is also connected to the drain electrode of one the 3rd metal-oxide-semiconductor (13), the source electrode of described 3rd metal-oxide-semiconductor (13) is connected with the drain electrode of the 4th metal-oxide-semiconductor (14) of one source pole ground connection and is connected with the second electric capacity (22) and the second inductance (32) that are connected in series successively in junction, the former limit winding of a transformer (2) is connected to and ground connection after described first inductance (31) and the second inductance (32) short circuit, the vice-side winding of described transformer (2) is connected with output circuit.
2. the full-bridge phase shifting circuit of a kind of gamut Sofe Switch according to claim 1, it is characterized in that: output circuit comprises vice-side winding two ends and is connected to conducting direction and is the first diode (41) away from vice-side winding direction and the second diode (42), be connected in series an outputting inductance (5) after the negative pole end short circuit of the first diode (41) and the second diode (42) and using the other end of outputting inductance (5) as voltage output end and and intermediate ends between vice-side winding two ends form output voltage.
3. the full-bridge phase shifting circuit of a kind of gamut Sofe Switch according to claim 2, is characterized in that: be connected with the output capacitance (6) and output resistance (7) that are arranged in parallel between the intermediate ends between voltage output end and vice-side winding two ends.
4. the full-bridge phase shifting circuit of a kind of gamut Sofe Switch according to claim 1, is characterized in that: be all connected with a booster diode (81) between the source electrode of the first metal-oxide-semiconductor (11), the second metal-oxide-semiconductor (12), the 3rd metal-oxide-semiconductor (13) and the 4th metal-oxide-semiconductor (14) and drain electrode and conducting direction is that the source electrode of each metal-oxide-semiconductor is to drain directions.
5. the full-bridge phase shifting circuit of a kind of gamut Sofe Switch according to claim 1, is characterized in that: be all connected with an auxiliary capacitor (82) between the source electrode of the first metal-oxide-semiconductor (11), the second metal-oxide-semiconductor (12), the 3rd metal-oxide-semiconductor (13) and the 4th metal-oxide-semiconductor (14) and drain electrode.
6. the full-bridge phase shifting circuit of a kind of gamut Sofe Switch according to claim 1, is characterized in that: the first metal-oxide-semiconductor (11), the second metal-oxide-semiconductor (12), the 3rd metal-oxide-semiconductor (13) and the 4th metal-oxide-semiconductor (14) are NPN type pipe.
CN201520590053.3U 2015-08-07 2015-08-07 Full -bridge shift circuit of soft switch of gamut Active CN204967619U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
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Application Number Priority Date Filing Date Title
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105071659A (en) * 2015-08-07 2015-11-18 姚晓武 Full-bridge phase-shifted circuit of full-range flexible switch

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105071659A (en) * 2015-08-07 2015-11-18 姚晓武 Full-bridge phase-shifted circuit of full-range flexible switch

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