CN105071659A - Full-bridge phase-shifted circuit of full-range flexible switch - Google Patents
Full-bridge phase-shifted circuit of full-range flexible switch Download PDFInfo
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- CN105071659A CN105071659A CN201510479920.0A CN201510479920A CN105071659A CN 105071659 A CN105071659 A CN 105071659A CN 201510479920 A CN201510479920 A CN 201510479920A CN 105071659 A CN105071659 A CN 105071659A
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Abstract
The invention relates to the technical field of power electronics, in particular to a full-bridge phase-shifted circuit of a full-range flexible switch. The full-bridge phase-shifted circuit comprises an input power supply, wherein a first tube and a second tube are connected between the two ends of the input power supply and connected in series, the drain of the first tube is connected with the positive electrode of the input power supply, the source of the first tube and the drain of the second tube are connected, a first capacitor and a first inductor are connected at a position where the source of the first tube and the drain of the second tube are connected, and are sequentially connected in series, the source of the second tube is connected with the negative electrode of the input power supply and is grounded, the drain of the first tube is further connected to the drain of a third tube, the source of the third tube is connected with the drain of a fourth tube of which the source is grounded, a second capacitor and a second inductor is connected at a position wherein the source of the third tube and the drain of the fourth tube are connected, and are sequentially connected in series, the first inductor and the second inductor are in short connection, then are connected to a primary winding of a transformer and are grounded, and a secondary winding of the transformer is connected with an output circuit. The full-bridge phase-shifted circuit has the advantages of running safety and stability, low cost, structural simplicity, low loss and low duty ratio loss.
Description
Technical field
the present invention relates to electric and electronic technical field, be specially a kind of full-bridge phase shifting circuit of gamut Sofe Switch.
Background technology
the full-bridge phase shifting flexible circuit of Sofe Switch realizes Sofe Switch due to the leakage inductance of the parasitic parameter and transformer that can utilize MOS itself, be widely applied in various large power, electrically source apparatus, but all there are some significant problems, one is that circulation loss is large, two is the loss increasing duty ratio, and in order to duty-cycle loss being controlled the circuits improvement in a rational scope, lagging leg can be result in again and gamut cannot realize Sofe Switch, prior art has the circuit of improvement equally to it, but this circuit needs the device adding auxiliary circuit more, for reduced volume, increase power density and have certain obstruction, and add a lot of circuit cost.
Summary of the invention
an object of the present invention is to provide that a kind of security of operation is stablized, cost is low, structure is simple and loss is few, duty-cycle loss is little gamut can realize the full-bridge phase shifting circuit of the gamut Sofe Switch of Sofe Switch.
above-mentioned technical purpose of the present invention is achieved by the following technical programs: a kind of full-bridge phase shifting circuit of gamut Sofe Switch, comprise input power, the first metal-oxide-semiconductor and second metal-oxide-semiconductor of serial connection is mutually connected with between described input power two ends, the described drain electrode of the first metal-oxide-semiconductor is connected with the positive pole of input power, the source electrode of the first metal-oxide-semiconductor is connected with the drain electrode of the second metal-oxide-semiconductor and is connected with the first electric capacity and the first inductance that are connected in series successively in junction, the source electrode of the second metal-oxide-semiconductor is connected with the negative pole of input power and ground connection, the drain electrode of described first metal-oxide-semiconductor is also connected to the drain electrode of one the 3rd metal-oxide-semiconductor, the source electrode of described 3rd metal-oxide-semiconductor is connected with the drain electrode of the 4th metal-oxide-semiconductor of one source pole ground connection and is connected with the second electric capacity and the second inductance that are connected in series successively in junction, the former limit winding of a transformer is connected to and ground connection after described first inductance and the second inductance short circuit, the vice-side winding of described transformer is connected with output circuit.
in technique scheme, this circuit structure is more stable, reliable, be applicable to powerful Switching Power Supply, cost is low, structure is simple and can reduce the circulation loss of full-bridge phase-shift soft switch power supply, compared with traditional circuit, it can reduce the circulation energy loss of the metal-oxide-semiconductor as switching tube of 1/2, and can realize lagging leg zero voltage switch and minimum duty-cycle loss in wider loading range, other physical properties such as heat radiation are all highly improved, and gamut can realize Sofe Switch.
as to preferably of the present invention, output circuit comprises vice-side winding two ends and is connected to conducting direction and is the first diode away from vice-side winding direction and the second diode, be connected in series an outputting inductance after the negative pole end short circuit of the first diode and the second diode and using the other end of outputting inductance as voltage output end and and intermediate ends between vice-side winding two ends form output voltage.
as to preferably of the present invention, between the intermediate ends between voltage output end and vice-side winding two ends, be connected with the output capacitance be arranged in parallel and output resistance.
as to preferably of the present invention, be all connected with a booster diode between the source electrode of the first metal-oxide-semiconductor, the second metal-oxide-semiconductor, the 3rd metal-oxide-semiconductor and the 4th metal-oxide-semiconductor and drain electrode and conducting direction is that the source electrode of each metal-oxide-semiconductor is to drain directions.
as to preferably of the present invention, between the source electrode of the first metal-oxide-semiconductor, the second metal-oxide-semiconductor, the 3rd metal-oxide-semiconductor and the 4th metal-oxide-semiconductor and drain electrode, be all connected with an auxiliary capacitor.
as to preferably of the present invention, the first metal-oxide-semiconductor, the second metal-oxide-semiconductor, the 3rd metal-oxide-semiconductor and the 4th metal-oxide-semiconductor are NPN type pipe.
beneficial effect of the present invention: this circuit structure is more stable, reliable, be applicable to powerful Switching Power Supply, cost is low, structure is simple, be beneficial to reduced volume and increase power density, and the circulation loss of full-bridge phase-shift soft switch power supply can be reduced, compared with traditional circuit, it can reduce the circulation energy loss of the metal-oxide-semiconductor as switching tube of 1/2, and lagging leg zero voltage switch and minimum duty-cycle loss can be realized in wider loading range, other physical properties such as heat radiation are all highly improved, and gamut can realize Sofe Switch.
Accompanying drawing explanation
fig. 1 is the structural representation of the embodiment of the present invention.
in figure: 1, input power, the 11, first metal-oxide-semiconductor, the 12, second metal-oxide-semiconductor, 13, the 3rd metal-oxide-semiconductor, the 14, the 4th metal-oxide-semiconductor, the 21, first electric capacity, 31, the first inductance, the 22, second electric capacity, the 32, second inductance, 2, transformer, the 41, first diode, the 42, second diode, 5, outputting inductance, 6, output capacitance, 7, output resistance, 81, booster diode, 82, auxiliary capacitor.
Embodiment
following specific embodiment is only explanation of the invention; it is not limitation of the present invention; those skilled in the art can make to the present embodiment the amendment not having creative contribution as required after reading this specification, as long as but be all subject to the protection of Patent Law in right of the present invention.
embodiment, as shown in Figure 1, a kind of full-bridge phase shifting circuit of gamut Sofe Switch, comprise input power 1, the first metal-oxide-semiconductor 11 and the second metal-oxide-semiconductor 12 of serial connection is mutually connected with between described input power 1 two ends, the drain electrode of described first metal-oxide-semiconductor 11 is connected with the positive pole of input power 1, the source electrode of the first metal-oxide-semiconductor 11 is connected with the drain electrode of the second metal-oxide-semiconductor 12 and is connected with the first electric capacity 21 and the first inductance 31 be connected in series successively in junction, the source electrode of the second metal-oxide-semiconductor 12 is connected with the negative pole of input power 1 and ground connection, the drain electrode of described first metal-oxide-semiconductor 11 is also connected to the drain electrode of one the 3rd metal-oxide-semiconductor 13, the source electrode of described 3rd metal-oxide-semiconductor 13 is connected with the drain electrode of the 4th metal-oxide-semiconductor 14 of one source pole ground connection and is connected with the second electric capacity 22 and the second inductance 32 be connected in series successively in junction, the former limit winding of a transformer 2 is connected to and ground connection after described first inductance 31 and the second inductance 32 short circuit, the vice-side winding of described transformer 2 is connected with output circuit.
output circuit comprise vice-side winding two ends be connected to conducting direction be away from be connected in series an outputting inductance 5 after first diode 41 in vice-side winding direction and the negative pole end short circuit of the second diode 42, first diode 41 and the second diode 42 and using the other end of outputting inductance 5 as voltage output end and and intermediate ends between vice-side winding two ends form output voltage.The output capacitance 6 and output resistance 7 that are arranged in parallel is connected with between intermediate ends between voltage output end and vice-side winding two ends.A booster diode 81 is all connected with and conducting direction is that the source electrode of each metal-oxide-semiconductor is to drain directions between the source electrode of the first metal-oxide-semiconductor 11, second metal-oxide-semiconductor 12, the 3rd metal-oxide-semiconductor 13 and the 4th metal-oxide-semiconductor 14 and drain electrode.An auxiliary capacitor 82 is all connected with between the source electrode of the first metal-oxide-semiconductor 11, second metal-oxide-semiconductor 12, the 3rd metal-oxide-semiconductor 13 and the 4th metal-oxide-semiconductor 14 and drain electrode.First metal-oxide-semiconductor 11, second metal-oxide-semiconductor 12, the 3rd metal-oxide-semiconductor 13 and the 4th metal-oxide-semiconductor 14 are NPN type pipe.
Claims (6)
1. the full-bridge phase shifting circuit of a gamut Sofe Switch, it is characterized in that: comprise input power (1), the first metal-oxide-semiconductor (11) and second metal-oxide-semiconductor (12) of serial connection is mutually connected with between described input power (1) two ends, the drain electrode of described first metal-oxide-semiconductor (11) is connected with the positive pole of input power (1), the source electrode of the first metal-oxide-semiconductor (11) is connected with the drain electrode of the second metal-oxide-semiconductor (12) and is connected with the first electric capacity (21) and the first inductance (31) that are connected in series successively in junction, the source electrode of the second metal-oxide-semiconductor (12) is connected with the negative pole of input power (1) and ground connection, the drain electrode of described first metal-oxide-semiconductor (11) is also connected to the drain electrode of one the 3rd metal-oxide-semiconductor (13), the source electrode of described 3rd metal-oxide-semiconductor (13) is connected with the drain electrode of the 4th metal-oxide-semiconductor (14) of one source pole ground connection and is connected with the second electric capacity (22) and the second inductance (32) that are connected in series successively in junction, the former limit winding of a transformer (2) is connected to and ground connection after described first inductance (31) and the second inductance (32) short circuit, the vice-side winding of described transformer (2) is connected with output circuit.
2. the full-bridge phase shifting circuit of a kind of gamut Sofe Switch according to claim 1, it is characterized in that: output circuit comprises vice-side winding two ends and is connected to conducting direction and is the first diode (41) away from vice-side winding direction and the second diode (42), be connected in series an outputting inductance (5) after the negative pole end short circuit of the first diode (41) and the second diode (42) and using the other end of outputting inductance (5) as voltage output end and and intermediate ends between vice-side winding two ends form output voltage.
3. the full-bridge phase shifting circuit of a kind of gamut Sofe Switch according to claim 2, is characterized in that: be connected with the output capacitance (6) and output resistance (7) that are arranged in parallel between the intermediate ends between voltage output end and vice-side winding two ends.
4. the full-bridge phase shifting circuit of a kind of gamut Sofe Switch according to claim 1, is characterized in that: be all connected with a booster diode (81) between the source electrode of the first metal-oxide-semiconductor (11), the second metal-oxide-semiconductor (12), the 3rd metal-oxide-semiconductor (13) and the 4th metal-oxide-semiconductor (14) and drain electrode and conducting direction is that the source electrode of each metal-oxide-semiconductor is to drain directions.
5. the full-bridge phase shifting circuit of a kind of gamut Sofe Switch according to claim 1, is characterized in that: be all connected with an auxiliary capacitor (82) between the source electrode of the first metal-oxide-semiconductor (11), the second metal-oxide-semiconductor (12), the 3rd metal-oxide-semiconductor (13) and the 4th metal-oxide-semiconductor (14) and drain electrode.
6. the full-bridge phase shifting circuit of a kind of gamut Sofe Switch according to claim 1, is characterized in that: the first metal-oxide-semiconductor (11), the second metal-oxide-semiconductor (12), the 3rd metal-oxide-semiconductor (13) and the 4th metal-oxide-semiconductor (14) are NPN type pipe.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510479920.0A CN105071659A (en) | 2015-08-07 | 2015-08-07 | Full-bridge phase-shifted circuit of full-range flexible switch |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201510479920.0A CN105071659A (en) | 2015-08-07 | 2015-08-07 | Full-bridge phase-shifted circuit of full-range flexible switch |
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| CN105071659A true CN105071659A (en) | 2015-11-18 |
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| CN201510479920.0A Pending CN105071659A (en) | 2015-08-07 | 2015-08-07 | Full-bridge phase-shifted circuit of full-range flexible switch |
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Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN204967619U (en) * | 2015-08-07 | 2016-01-13 | 浙江亚能能源科技有限公司 | Full -bridge shift circuit of soft switch of gamut |
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Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN204967619U (en) * | 2015-08-07 | 2016-01-13 | 浙江亚能能源科技有限公司 | Full -bridge shift circuit of soft switch of gamut |
Non-Patent Citations (1)
| Title |
|---|
| 石磊等: "新型能量交换式移相全桥电路", 《中国电机工程学报》 * |
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Application publication date: 20151118 |